# Power MOSFET, P Channel, 40 V, 8.5 A, 7000 µohm, PowerDI 5060, Surface Mount

![Product image](https://novapart.co/image/farnell:3943794RL/)

**URL**: https://novapart.co/products/DMP4015SPS-13/power-mosfet-p-channel-40-v-85-a-7000-ohm-powerdi
**SKU**: DMP4015SPS-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2660
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.3W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PowerDI 5060 |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 8.5A |
| Drain Source On State Resistance | 7000µohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943794RL/)

**DMP4015SPS 40V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI[®]** 

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## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**V(BR)DSS**|**RDS(on) max**|**ID**<br>**TA = +25°C**|
|-40V|11mΩ@VGS= -10V|-17A|
||15mΩ@VGS= -4.5V|-14.5A|



## **Features and Benefits** 

- 100% Unclamped Inductive Switch (UIS) Test In Production 

- Low On-Resistance 

- Fast Switching Speed 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Description** 

## **Mechanical Data** 

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

- ® 

- • **Case** : POWERDI 5060-8 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

## **Applications** 

   - Terminal Connections: See Diagram 

- DC-DC Converters 

   - Terminals: Finish – 100% matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 

   - • Weight: 0.097 grams (approximate) 

- Power management functions 

- Analog Switch 

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D<br>S D<br>Pin1  S D<br>S D G<br>G D<br>S<br> 7 #<br>Top View<br>Top View  Bottom View  Pin Configuration Internal Schematic<br>g Information Information (Note 4)<br>Part Number Compliance  Case Packaging<br>DMP4015SPS-13  Standard  POWERDI®5060-8  2,500 / Tape & Reel<br>**----- End of picture text -----**<br>


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Pin1<br>@ 7<br>Top View  Bottom View<br>**----- End of picture text -----**<br>


## **Ordering Information Information** (Note 4) 

- Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

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D D D D<br>P4015SP<br>YY WW<br>S S S G<br>**----- End of picture text -----**<br>


= Manufacturer’s Marking P4015SP = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 13 = 2013) WW = Week (01 - 53) 

POWERDI is a registered trademark of Diodes Incorporated 

1 of 6 **www.diodes.com** 

DMP4015SPS Document number: DS35518  Rev. 10 - 2 

December 2013 © Diodes Incorporated 

**DMP4015SPS** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Characteristic**<br>**Symbol**<br>**Value**<br>**Units**|
|---|
|Drain-Source Voltage<br>VDSS<br>-40<br>V|
|Gate-Source Voltage<br>VGSS<br>±25<br>V<br>Continuous Drain Current (Note 5) VGS= -10V<br>Steady<br>State<br>TA= +25°C<br>TA= +70°C<br>ID<br>-8.5<br>-6.8<br>A<br>t<10s<br>TA= +25°C<br>TA= +70°C<br>ID<br>-13<br>-10.5<br>A<br>Continuous Drain Current (Note 6) VGS= -10V<br>Steady<br>State<br>TA= +25°C<br>TA= +70°C<br>ID<br>-11<br>-8.7<br>A<br>t<10s<br>TA= +25°C<br>TA= +70°C<br>ID<br>-17<br>-13.5<br>A<br>Pulsed Drain Current(10μspulse,dutycycle = 1%)<br>IDM<br>-100<br>A<br>Maximum BodyDiode Continuous Current(Note 6)<br>IS<br>-3.5<br>A<br>Avalanche Current(Note 7)<br>IAS<br>-22<br>A<br>Avalanche Energy (Note 7)<br>EAS<br>242<br>mJ<br>~~ee~~<br>~~Ss~~<br>~~ee~~<br>~~ee ee ee~~<br>~~Ss~~<br>~~a~~<br>~~a~~<br>~~SS~~|
||
|**Thermal Characteristics **(@TA= +25°C, unless otherwise specified.)|
||
|**Characteristic**<br>**Symbol**<br>**Value**<br>**Units**|
|Total Power Dissipation (Note 5)<br>TA= +25°C<br>PD<br>1.3<br>W<br>TA= +70°C<br>0.8|
|Thermal Resistance, Junction to Ambient (Note 5)<br>Steadystate<br>RθJA<br>96.4<br>°C/W<br>t<10s<br>40.6<br>°C/W|
|Total Power Dissipation (Note 6)<br>TA= +25°C<br>PD<br>2.1<br>W<br>TA= +70°C<br>1.4|
|Thermal Resistance, Junction to Ambient (Note 6)<br>Steadystate<br>RθJA<br>55<br>°C/W<br>t<10s<br>24<br>°C/W|
|Thermal Resistance,Junction to Case(Note 6)<br>RθJC<br>4.15<br>°C/W|
|Operatingand Storage Temperature Range<br>TJ,TSTG<br>-55 to +150<br>°C|
||
|**Electrical Characteristics** (@TA= +25°C, unless otherwise specified.)|
||
|**Characteristic**<br>**Symbol**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**<br>**Test Condition**<br>**OFF CHARACTERISTICS(Note 8)**<br>Drain-Source Breakdown Voltage<br>BVDSS<br>-40<br>⎯<br>⎯<br>V<br>VGS= 0V,ID= -250μA<br>Zero Gate Voltage Drain Current<br>IDSS<br>⎯<br>⎯<br>-1<br>µA<br>VDS= -40V,VGS= 0V<br>Gate-Source Leakage<br>IGSS<br>⎯<br>⎯<br>±100<br>nA<br>VGS=±25V,VDS= 0V<br>**ON CHARACTERISTICS(Note 8)**<br>Gate Threshold Voltage<br>VGS(th)<br>-1.5<br>-2<br>-2.5<br>V<br>VDS= VGS,ID= -250μA<br>Static Drain-Source On-Resistance<br>RDS (ON)<br>⎯<br>7<br>11<br>mΩ<br>VGS= -10V,ID= -9.8A<br>⎯<br>9<br>15<br>VGS= -4.5V,ID= -9.8A<br>~~_——————————————————————~~<br>~~a~~<br>~~a a a~~<br>~~_a~~|
|Forward Transfer Admittance<br>|Yfs|<br>⎯<br>26<br>⎯<br>S<br>VDS= -20V,ID= -9.8A|
|Diode Forward Voltage<br>VSD<br>⎯<br>-0.7<br>-1<br>V<br>VGS= 0V,IS= -1A<br>**DYNAMIC CHARACTERISTICS(Note 9)**<br>~~Cf ff~~|
|Input Capacitance<br>Ciss<br>⎯<br>4234<br>⎯<br>pF<br>VDS= -20V, VGS= 0V<br>f = 1MHz<br>Output Capacitance<br>Coss<br>⎯<br>1036<br>⎯<br>Reverse Transfer Capacitance<br>Crss<br>⎯<br>526<br>⎯<br>Gate Resistance<br>RG<br>⎯<br>7.77<br>⎯<br>Ω<br>VDS= 0V,VGS= 0V,f = 1MHz<br>Total Gate Charge<br>Qg<br>⎯<br>47.5<br>⎯<br>nC<br>VDS= -20V, VGS= -5V<br>ID= -9.8A<br>Gate-Source Charge<br>Qgs<br>⎯<br>14.2<br>⎯<br>Gate-Drain Charge<br>Qgd<br>⎯<br>13.5<br>⎯<br>Turn-On DelayTime<br>tD(on)<br>⎯<br>13.2<br>⎯<br>ns<br>VGS= -10V, VDD= -20V, RG= 6Ω,<br>ID= -1A, RL= 20Ω<br>Turn-On Rise Time<br>tr<br>⎯<br>10<br>⎯<br>Turn-Off DelayTime<br>tD(off)<br>⎯<br>302.7<br>⎯<br>Turn-Off Fall Time<br>tf<br>⎯<br>137.9<br>⎯<br>~~ee~~<br>~~er ee ee~~<br>~~SST~~<br>~~—————~~<br>~~ee~~|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. UIS in production with L = 0.1mH, TJ = +25°C 

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate 

- 8 .Short duration pulse test used to minimize self-heating effect. 

9. Guaranteed by design. Not subject to production testing. 

POWERDI is a registered trademark of Diodes Incorporated 

2 of 6 **www.diodes.com** 

DMP4015SPS Document number: DS35518  Rev. 10 - 2 

December 2013 © Diodes Incorporated 

**DMP4015SPS** 

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30  30<br>-VGS=4.0V<br>25 -V GS =3.5V 25<br>20 20<br>-VGS=4.5V<br>15 -VGS=10V 15<br>Po Sineee an<br>10 -V GS =3.0V 10<br>50 VO 50<br>0 0.5 1 1.5 2 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>-VFig. 1 Typical Output CharacteristicsDS, DRAIN -SOURCE VOLTAGE(V) -VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 2 Typical Transfer Characteristics<br>0.02 0.02 -VGS= 4.5V TA = 125°C TA = 150°C<br>0.015 0.015<br>TA = 85°C<br>—<br>0.01 FEC] 0.01 BEES T A  = 25°C<br>TA = -55°C<br>0.005 0.005<br>0 EEE 0 GEESE<br>0 5 10 15 20 25 30 0 5 10 15 20 25 30<br>-ID, DRAIN SOURCE CURRENT -ID, DRAIN SOURCE CURRENT (A)<br>Fig. 3  Typical On-Resistance vs.  Fig. 4  Typical On-Resistance vs.<br>Drain Current and Gate Voltage  Drain Current and Temperature<br>1.6 0.02<br>1.4 0.016 -V-IDGS= 5.0A= 4.5V<br>ley ne<br>1.2 0.012<br>ttt Ar ) LL er<br>1 0.008 VGS = 10V<br>ID = 10A<br>BaD aane aaa<br>0.8 0.004<br>Ae<br>0.6 PLETE PT 0 EEL<br>-50 -25 0 25 50 75 100 125 150<br>-50 -25TJ, JUNCTION TEMPERATURE (0 25 50 75 100 °C)125 150 Fig. 6  On-Resistance Variation with TemperatureTJ, JUNCTION TEMPERATURE (°C)<br>Fig. 5  On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A)<br>D , DRAIN CURRENT (A)<br>-I D<br>-I<br>)Ω , DRAIN-SOURCE ON-RESISTANCE()Ω<br>,DRAIN-SOURCE ON-RESISTANCE(<br>DS(ON)<br>DS(ON) R<br>R<br>)Ω<br>(Normalized)<br>, DRAIN-SOURCE ON-RESISTANCE , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R DS(ON)<br>R<br>**----- End of picture text -----**<br>


POWERDI is a registered trademark of Diodes Incorporated 

3 of 6 **www.diodes.com** 

DMP4015SPS Document number: DS35518  Rev. 10 - 2 

December 2013 © Diodes Incorporated 

**DMP4015SPS** 

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2.4 30<br>2 ——=[—[—[—__ : 25<br>1.6 SSS 20 aie<br>1.2 SS 15 Pt poset |<br>0.8 10<br>0.4 5<br>Sa PEE TL<br>0 0<br>-50 TEE -25 0 25 EET 50 75 100 125 T 150 0 PEt 0.2 0.4 0.6 UTALT 0.8 1 1.2 1.4<br>TA, AMBIENT TEMPERATURE (°C) -VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current<br>1000 10000<br>f = 1MHz TA =150°C<br>CISS 1000 TA =125°C<br>TA =85 ° C<br>100<br>COSS<br>100 Naan ====2=<br>10<br>SS CRSS ELSE TA =25°C<br>1<br>=sS=i=<br>10  0.1 SS SS E=<br>0 5 10 15 20 25 30<br>0 5 10 15 20 25 30<br>VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Drain-Source Leakage Current vs. Voltage-VDS, DRAIN-SOURCE VOLTAGE(V)<br>Fig. 9 Typical Junction Capacitance<br>10 600 90<br>Starting Temperature (TJ) = 25°C<br>80<br>500<br>8 Ty «(jee 70<br>EAS<br>400 60<br>6 Ree<br>50<br>300<br>40<br>4 IAS<br>COVE O 200 RB RRREER 30<br>20<br>2<br>100<br>MITT) = ooorr<br>10<br>0 0<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>0 JL 20 40 FTE 60 80 100 tT) 120 =  GEE<br>INDUCTOR (mH)<br>Qg, TOTAL GATE CHARGE (nC) Fig. 12 Single-Pulse Avalanche Tested<br>Fig. 11 Gate-Charge Characteristics<br>, SOURCE CURRENT (A)<br>, GATE THRESHOLD VOLTAGE (V) S<br>GS(TH) -I<br>-V<br>, LEAKAGE CURRENT (nA)<br>, JUNCTION CAPACITANCE (pF) DSS<br>T -I<br>C<br>, GATE-SOURCE VOLTAGE (V)GS , AVALANCHE ENERGY (mJ)EAS AS, AVALANCHE CURRENT (A)I<br>V<br>**----- End of picture text -----**<br>


POWERDI is a registered trademark of Diodes Incorporated 

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1 ee<br>D = 0.7<br>D = 0.5<br>D = 0.3<br>0.1<br>D = 0.1<br>D = 0.9<br>D = 0.05 ae [Sai] RθJA(t) = r(t)  * RθJA<br>Rθ JA  = 97°C/W<br>D = 0.02<br>P(pk)<br>0.01 t 1<br>D = 0.01 t2<br>TJ - TA = P  *  RθJA(t)<br>D = 0.005 Duty Cycle, D = t 1 /t 2<br>DUT mounted on FR-4 PCB with<br>D = Single Pulse minimum recommended pad layout<br>0.001<br>0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (s)<br>Fig. 13 Transient Thermal Response<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 

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D<br>Detail A POWERDI5060-8<br>D1<br>O (4X) Dim  Min  Max  Typ<br>A  0.90 1.10 1.00<br>A1  0.00  0.05  –<br>c<br>b 0.33 0.51  0.41<br>A1<br>b2  0.200 0.350 0.273<br>E1 i E === b3  0.40  0.80  0.60<br>c 0.230 0.330 0.277<br>e D  5.15 BSC<br>D1  4.70  5.10  4.90<br>D2  3.70 4.10 3.90<br>1 O (4X) D3 3.90 4.30 4.10<br>E  6.15 BSC<br>b (8X) e/2 E1  5.60 6.00 5.80<br>E2  3.28 3.68 3.48<br>1<br>E3  3.99  4.39  4.19<br>L b2 (4X)<br>e 1.27 BSC<br>D3 K G 0.51  0.71  0.61<br>K  0.51  –  –<br>L  0.51  0.71  0.61<br>A<br>E3 E2 D2 b3 (4X) L1  0.050 0.20 0.175<br>M<br>M  3.235 4.035 3.635<br>mea M1 === M1  1.00 1.40 1.21<br>Detail A Θ 10º  12º  11º<br>Θ1  6º  8º  7º<br>G L1<br>All Dimensions in mm<br>Ea ae<br>POWERDI is a registered trademark of Diodes Incorporated<br>DMP4015SPS 5 of 6<br>www.diodes.com<br>**----- End of picture text -----**<br>


DMP4015SPS Document number: DS35518  Rev. 10 - 2 

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**DMP4015SPS** 

## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

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Dimensions  Value (in mm)<br>C  1.270<br>G  0.660<br>G1  0.820<br>X  0.610<br>X1  4.100<br>X2  0.755<br>— | X3  4.420<br>i<br>X4  5.610<br>Y  1.270<br>Y1  0.600<br>Y2  1.020<br>Y3  0.295<br>Y4  1.825<br>cae Y5  3.810<br>aaa<br>Y6  0.180<br>︵ ︶ Y7  6.610<br>Ooon<br>X4<br>Y2<br>X3<br>Y3 Y1<br>X2<br>Y5<br>Y4 X1<br>Y7<br>C G 1<br>Y6<br>Y 4x<br>X G<br>**----- End of picture text -----**<br>


## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2013, Diodes Incorporated 

## **www.diodes.com** 

POWERDI is a registered trademark of Diodes Incorporated 

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DMP4015SPS Document number: DS35518  Rev. 10 - 2 

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**www.diodes.com** 



## Links

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- [Supplier page](https://es.farnell.com/diodes-inc/dmp4015sps-13/mosfet-p-ch-40v-8-5a-powerdi-5060/dp/3943794RL)
---

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