# Power MOSFET, P Channel, 40 V, 35 A, 0.011 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2543554RL/)

**URL**: https://novapart.co/products/DMP4015SK3-13/power-mosfet-p-channel-40-v-35-a-0011-ohm-to-252
**SKU**: DMP4015SK3-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3580
**Stock**: 1000+
**Lead Time**: 106 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-35A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.007ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2V; Powe

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 3.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 35A |
| Drain Source On State Resistance | 0.011ohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2543554RL/)

**DMP4015SK3** 

**P-CHANNEL ENHANCEMENT MODE MOSFET** 

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## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON) Max**|**ID**<br>TC= +25°C|
|-40V|11mΩ@VGS= -10V|-35A|
||15mΩ@VGS= -4.5V|-30A|



## **Features and Benefits** 

- 100% Unclamped Inductive Switch (UIS) test in production 

- Low On-Resistance 

- Fast Switching Speed 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability.** 

**https://www.diodes.com/quality/product-definitions/** 

- **An automotive-compliant part is available under separate datasheet (DMP4015SK3Q)** 

## **Description and Applications** 

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. 

## **Mechanical Data** 

   - Package: TO252 

   - Package Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

- DC-DC converters 

- Power-management functions 

- Backlighting 

- Terminal Connections: See Diagram 

- Terminals: Finish – Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 **e3** 

- Weight: 0.33 grams (Approximate) 

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D<br>D<br>G S<br>Top View<br>Pin-Out<br>**----- End of picture text -----**<br>


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TO252 (DPAK)<br>**----- End of picture text -----**<br>


Top View Pin-Out Equivalent Circuit **Ordering Information** (Note 4) **Packing Part Number Package Qty. Carrier** ~~_—————~~ DMP4015SK3-13 TO252 (DPAK) 2,500 Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

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P4015S<br>YYWW<br>**----- End of picture text -----**<br>


P4015S = Product Type Marking Code       = Manufacturer’s Marking . YYWW = Date Code Marking YY = Year (ex: 23 = 2023) WW = Week (01 to 53) 

1 of 7 **www.diodes.com** 

DMP4015SK3 Document number: DS35480 Rev. 8 - 2 

September 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. 

**DMP4015SK3** 

## **Maximum Ratings** (@ TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|-40|V|
|Gate-Source Voltage|||VGSS|±25|V|
|Continuous Drain Current (Note 5) VGS= -10V|Steady<br>State|TC= +25°C<br>TC= +70°C|ID|-35<br>-27|A|
|Continuous Drain Current (Note 5) VGS= -10V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-14<br>-11|A|
||t < 10s|TA= +25°C<br>TA= +70°C|ID|-22<br>-18|A|
|Pulsed Drain Current(10µs Pulse,DutyCycle = 1%)|||IDM|-100|A|
|Maximum BodyDiode Forward Current(Note 5)|||IS|-5.5|A|
|Avalanche Current  L = 1mH|||IAS|-22|A|
|Avalanche EnergyL = 1mH|||EAS|242|mJ|



## **Thermal Characteristics** (@ TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation (Note 5)|TA= +25°C|PD|3.5|W|
||TA= +70°C||2.2||
|Thermal Resistance, Junction to Ambient (Note 5)|Steady State|RθJA|36|°C/W|
||t< 10s||15||
|Thermal Resistance,Junction to Case(Note 5)|SteadyState|RθJC|4.5||
|Operatingand Storage Temperature Range||TJ, TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 6)**|||||||
|Drain-Source Breakdown Voltage|BVDSS|-40|||V|VGS= 0V,ID= -250µA|
|Zero Gate Voltage Drain Current|IDSS|||-1|µA|VDS= -40V,VGS= 0V|
|Gate-Source Leakage|IGSS|||100|nA|VGS=25V,VDS= 0V|
|**ON CHARACTERISTICS(Note 6)**|||||||
|Gate Threshold Voltage<br>~~a~~|VGS(TH)<br>~~a~~|-1.5<br>~~a~~|-2<br>~~a~~|-2.5<br>~~a~~|V<br>~~a~~|VDS= VGS,ID= -250µA<br>~~a~~|
|Static Drain-Source On-Resistance<br>~~a~~|RDS(ON)<br>~~a~~|<br>~~a~~|7<br>~~a~~|11<br>~~a~~|mΩ<br>~~a~~|VGS= -10V,ID= -9.8A<br>~~a~~|
|||<br>~~a~~|9<br>~~a~~|15<br>~~a~~||VGS= -4.5V,ID= -9.8A<br>~~a~~|
|Forward Transfer Admittance<br>~~a~~||Yfs|<br>~~a~~|<br>~~a~~|26<br>~~a~~|<br>~~a~~|S<br>~~a~~|VDS= -20V,ID= -9.8A<br>~~a~~|
|Diode Forward Voltage|VSD||-0.7|-1|V|VGS= 0V,IS= -1A|
|**DYNAMIC CHARACTERISTICS(Note 7)**<br>~~———~~<br>~~ee~~|||||||
|Input Capacitance<br>~~———~~|Ciss||4,234|<br>~~ee~~|pF<br>~~ee~~|VDS= -20V, VGS= 0V<br>f = 1MHz<br>~~ee~~|
|Output Capacitance<br>~~———~~|Coss||1,036|<br>~~ee~~|||
|Reverse Transfer Capacitance<br>~~———~~|Crss||526|<br>~~ee~~|||
|Gate Resistance<br>~~———~~<br>~~——~~|RG<br>~~rr~~|<br>~~rr~~|7.77<br>~~rr~~|<br>~~ee~~<br>~~rr~~|Ω<br>~~ee~~<br>~~rr~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~ee~~<br>~~rr~~|
|Total Gate Charge<br>~~———~~<br>~~——~~|Qg<br>~~rr~~|<br>~~rr~~|47.5<br>~~rr~~|<br>~~ee~~<br>~~rr~~|nC<br>~~ee~~<br>~~rr~~|VDS= -20V, VGS= -5V<br>ID= -9.8A<br>~~ee~~<br>~~rr~~|
|Gate-Source Charge<br>~~——~~|Qgs<br>~~rr~~|<br>~~rr~~|14.2<br>~~rr~~|<br>~~rr~~|||
|Gate-Drain Charge<br>~~——~~|Qgd<br>~~rr~~|<br>~~rr~~|13.5<br>~~rr~~|<br>~~rr~~|||
|Turn-On DelayTime<br>~~—— ~~<br>~~ee~~|tD(ON)<br> ~~rr~~<br>~~ee~~|<br>~~rr~~<br>~~ee~~|13.2<br>~~rr~~<br>~~ee~~|<br>~~rr~~<br>~~ee~~|ns<br>~~rr~~<br>~~ee~~|VGS= -10V, VDD= -20V,<br>RG= 6Ω, ID= -1A<br>~~rr~~<br>~~ee~~|
|Turn-On Rise Time<br>~~ee~~|tR<br>~~ee~~|<br>~~ee~~|10<br>~~ee~~|<br>~~ee~~|||
|Turn-Off DelayTime<br>~~ee~~|tD(OFF)<br>~~ee~~|<br>~~ee~~|302.7<br>~~ee~~|<br>~~ee~~|||
|Turn-Off Fall Time<br>~~ee~~|tF<br>~~ee~~|<br>~~ee~~|137.9<br>~~ee~~|<br>~~ee~~|||



2 of 7 **www.diodes.com** 

DMP4015SK3 Document number: DS35480 Rev. 8 - 2 

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**DMP4015SK3** 

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30.0  30<br>-VGS = 4.0V<br>25.0  -V GS = 3.5V 25<br>20.0  taTS -VGS = 4.5V 20 aeSitcnd cnn<br>15.0  -VGS = 10V 15<br>10.0  _—— 10 Snenn S55<br>5.0  | —— -V GS = 3.0V 5 /]|<br>0.0 0 [-—— 0.5 1 1.5 2 00 Dp 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>-VDS, DRAIN -SOURCE VOLTAGE(V) -VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics<br>0.02 0.02 -VGS= 4.5V TA = 125C TA = 150C<br>0.015 0.015<br>TA = 85C<br>0.01 aaa 0.01 T A  = 25C<br>TA = -55C<br>0.005 0.005<br>0 PCE 0<br>0 5 10 15 20 25 30 0 5 10 15 20 25 30<br>-ID, DRAIN SOURCE CURRENT -ID, DRAIN SOURCE CURRENT (A)<br>Fig. 3  Typical On-Resistance vs.  Fig. 4  Typical On-Resistance vs.<br>Drain Current and Gate Voltage  Drain Current and Temperature<br>1.6 0.020<br>1.4 0.016 -V-IDGS= 5.0A= 4.5V<br>Te =  AL<br>1.2 0.012<br>carl er<br>1 0.008 -V -ID GS = 10A = 10V<br>eet) Eee,<br>0.004<br>0.8<br>Zo PTL LL<br>0.6 PTL ELL EL 0 LL EEELL<br>-50 -25 0 25 50 75 100 125 150<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)<br>Fig. 6  On-Resistance Variation with Temperature<br>Fig. 5  On-Resistance Variation with Temperature<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>(Normalized)<br>, DRAIN-SOURCE ON-RESISTANCE<br>R<br>DS(ON)<br>, DRAIN CURRENT (A)<br>D<br>-I<br>)<br>,DRAIN-SOURCE ON-RESISTANCE(<br>DS(ON)<br>R<br>, DRAIN CURRENT (A)<br>-I<br>D<br>DS(ON)<br>)<br><br>, DRAIN-SOURCE ON-RESISTANCE(<br>R<br>**----- End of picture text -----**<br>


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DMP4015SK3 Document number: DS35480 Rev. 8 - 2 

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**DMP4015SK3** 

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2.41.62 eeSSSELS 302520 Seanese<br>1.20.8 SSS)COA 1510 CeeEee<br>0.4 5<br>0 0<br>-50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1 1.2 1.4<br>TA, AMBIENT TEMPERATURE (( [o] 癈C) ) -VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current<br>10000 10000<br>f=1MHz TTAA=  = 15 00癈 [o] C<br>—— C iss i<br>ee CL ae<br>1000 TATA= =125 125 [o] 癈C<br>rsee T AT A=  =85  85 [o] 癈 C<br>100<br>Coss<br>SEE |<br>1000 \ a<br>ON ISSeee<br>C rss 10<br>aa ee ——— TTAA = 25=25癈 [o] — C<br>1<br>a<br>100 0.1 a<br>0 EEE 5 10 15  EL 20 25 30 0 ——— 5 10 15 20 25 30<br>VDS , DRAIN-SOURCE VOLTAGE (V) -VDS, DRAIN-SOURCE VOLTAGE(V)<br>Figure 9 Typical Junction Capacitance Fig. 9 Typical Junction Capacitance Fig. 10 Typical Drain-Source Leakage Current vs. Voltage<br>10 100<br>90 Single Pulse<br>RJA = 7272癈 [o] C/W /W<br>8 |] | /KE 80 M MAEE T AIT T T RTJ - TJA(t) = r(t) * RA = P * RJAJA |<br>70<br>6 a fo 60 SINT TE TT |<br>50<br>4 - }veganJoJ 40 S UMMELUNTAN TIT T ATN TAUMTTITE  TMT  EE E TTT<br>30<br>2 ry][ | 20 STINET TAME TTTELTT ETTTT<br>10<br>SE<br>0 ARE 0 TOSUeeOnee<br>0 20 40 60 80 100 120 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (sec)<br>Qg, TOTAL GATE CHARGE (nC) Fig. 12 Single Pulse Maximum Power Dissipation<br>Fig. 11 Gate-Charge Characteristics<br>T<br>, JUNCTION CAPACITANCE (pF)<br>C<br>, PEAK TRANSIENT POWER (W)<br>P<br>(pk)<br>, GATE THRESHOLD VOLTAGE (V)<br>-V<br>GS(TH)<br>, LEAKAGE CURRENT (nA)<br>DSS<br>-I<br>, SOURCE CURRENT (A)<br>S<br>-I<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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DMP4015SK3 Document number: DS35480 Rev. 8 - 2 

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**DMP4015SK3** 

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600 90 100<br>Starting Temperature (TTJJ = 25) = 25 [o] 癈C  80 RLimitedDS(on) AUTEN P NNY W = 10µs H<br>500 \ ———— NeNOSNN J > IN<br>70<br>=EE EAS 10 atRRNA [NINN] SSH<br>400 60<br>DC<br>>< 7 po NTN ONT INETAT<br>300 |ryPK 50 1 ||TP— PW = 10s P NERGINDSOKPNONAINESA W = 1s ININONANTT<br>40 PW = 100ms<br>IAS P W = 10ms<br>200 | >! 30 esre ee ee | PW = 1ms NOEEINUPNNREN E<br>100 —— 20 0.1 fT TTJ(A = ma 2 x5)5 [o] =癈C  150 癈oC  eeES PW = 100100μs  ee 祍 be<br>10 V GS = -10V [ee<br>Single Pulse<br>DUT on 1 * MRP Board<br>0 0 0.01 ee<br>0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 1 10 100<br>INDUCTOR (mH) -VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 13 Single-Pulse Avalanche Tested Fig. 14 SOA, Safe Operation Area<br>1 OOSSS<br>Dt D = 0.7<br>D = 0.5 rr a<br>ee emt tt<br>D = 0.3 nt Ne<br>ese D = 0.9 HHT<br>0.1 RN oath  |<br>cecea D = 0.1 eg, [ee] [eg] [De] ee [0a] Zoe [fa] Oe eT|<br>RE D = 0.50 CP tt tT CrAn<br>D = 0.02<br>NUTTIN BS AM OUITIM AIT GER ERATTLIOO IO OTITIOOM GOUT<br>0.01 TIN D = 0.01 TAIN UAIE ITMTTT INELT | TTLT<br>Deer D = 0.005 FAA ee ee RJA(t) = r(t)  *  RJA TTT<br>PEIa | R JA  =  72 o癈C/W /W CoHH<br>D = Single Pulse Duty Cycle, D = t1/ t2<br>0.001<br>0.001 0.01 0.1 1 10 100 1,000 10,000<br>t1, PULSE DURATION TIMES (sec)<br>Fig. 15 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>AS<br>AS<br>, AVALANCHE ENERGY (mJ) I<br>, AVALANCHE CURRENT (A)<br>E<br>, DRAIN CURRENT (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


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DMP4015SK3 Document number: DS35480 Rev. 8 - 2 

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© 2023 Copyright Diodes Incorporated. All Rights Reserved. 

**DMP4015SK3** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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**----- Start of picture text -----**<br>
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|
|TO252 (DPAK)|
|E|
|A|
|b3|
|7°±1°|
|c|
|L3|
|TO252 (DPAK)|
|Dim Min|Max|Typ|
|A|2.19|2.39|2.29|
|D|A2|A1|0.00|0.13|0.08|
|L4|H|A2|0.97|1.17|1.07|
|b|0.64|0.88|0.783|
|b2|0.76|1.14|0.95|
|b3|5.21|5.50|5.33|
|c|0.45|0.58|0.531|
|D|6.00|6.20|6.10|
|ne|e|a|b(|3x)||.|GEEE|D1|5.21|--|--|
|b2(|2x)|e|2.286 BSC|
|E|6.45|6.70|6.58|
|0.508|E1|4.32|--|--|
|Gauge Plane|
|H|9.40 10.41|9.91|
|L|1.40|1.78|1.59|
|E1|D1|Seating Plane|L3|0.88|1.27|1.08|
|L|L4|0.64|1.02|0.83|
|A1|
|a|0°|10°|--|
|2.74REF|
|All Dimensions in mm|
|=|AY|=|
|Suggested Pad Layout|

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Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **TO252 (DPAK)** 

X1 Y1 Y2 ~~om~~ C Y ~~ot~~ X 

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|||
|---|---|
|Dimensions|Value (in mm)|
|C|4.572|
|X|1.060|
|X1|5.632|
|Y|2.600|
|Y1|5.700|
|Y2|10.700|

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DMP4015SK3 Document number: DS35480 Rev. 8 - 2 

September 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. 

**DMP4015SK3** 

## **IMPORTANT NOTICE** 

1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes’ products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes’ products. Diodes’ products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of Diodes’ products for their intended applications, (c) ensuring their applications, which incorporate Diodes’ products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 

3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 

4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document. 

5. Diodes’ products are provided subject to Diodes’ Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/) or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 

6. Diodes’ products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes’ products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 

7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 

8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. 9. This Notice may be periodically updated with the most recent version available at https://www.diodes.com/about/company/terms-andconditions/important-notice 

The Diodes logo is a registered trademark of Diodes Incorporated in the United States and other countries. All other trademarks are the property of their respective owners. 

- © 2023 Diodes Incorporated. All Rights Reserved. 

## **www.diodes.com** 

7 of 7 **www.diodes.com** 

DMP4015SK3 Document number: DS35480 Rev. 8 - 2 

September 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. 



## Links

- [View this product on Novapart](https://novapart.co/products/DMP4015SK3-13/power-mosfet-p-channel-40-v-35-a-0011-ohm-to-252)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmp4015sk3-13/mosfet-p-ch-40v-to-252-3/dp/2543554RL)
---

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