# Power MOSFET, P Channel, 40 V, 50 A, 7500 µohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:3943790/)

**URL**: https://novapart.co/products/DMP4010SK3Q-13/power-mosfet-p-channel-40-v-50-a-7500-ohm-to-252
**SKU**: DMP4010SK3Q-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3920
**Stock**: 500+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 1.7W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 50A |
| Drain Source On State Resistance | 7500µohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943790/)

| 

**Green DMP4010SK3Q P-CHANNEL ENHANCEMENT MODE MOSFET** 

**==> picture [521 x 442] intentionally omitted <==**

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Green DMP4010SK3Q<br>P-CHANNEL ENHANCEMENT MODE MOSFET<br>a<br>Product Summary Features and Benefits<br>V(BR)DSS RDS(ON) Max ID  100% Unclamped Inductive Switch (UIS) Test in Production<br>TC = +25°C  Low On-Resistance<br>-40V  9.9m @ VGS = -10V  -50A   Fast Switching Speed<br>14m @ VGS = -4.5V  -45A   Lead-Free Finish; RoHS Compliant (Notes 1 & 2)<br> Halogen and Antimony Free. “Green” Device (Note 3)<br> Qualified to AEC-Q101 Standards for High Reliability<br>Description    PPAP Capable (Note 4)<br>This new generation MOSFET is designed to minimize the on-state<br>resistance (Rmaking it ideal for high efficiency power management applications. DS(ON)) and yet maintain superior switching performance,  Mechanical Data<br> Case: TO252<br>Applications   Case Material: Molded Plastic, ―Green‖ Molding Compound. UL<br> DC-DC Converters  Flammability Classification Rating 94V-0<br> Power Management Functions   Moisture Sensitivity: Level 1 per J-STD-020<br> Backlighting    Terminal Connections: See Diagram<br> Terminals: Finish – Matte Tin Finish Annealed over Copper<br>DIODES. C y Leadframe. Solderable per MIL-STD-202, Method 208  J e3<br> Weight: 0.33 grams (Approximate)<br>TO252<br>D D<br>G<br>><br>D<br>|) &<br>S<br>G S<br>Top View  Top View<br>Pin-Out  Equivalent Circuit<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 5) 

|**Ordering Informationg Information Information** (Note 5)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMP4010SK3Q-13|TO252|2,500/Tape & Reel|



- Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/. 

   5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

- P4010S = Product Type Marking Code       = Manufacturer’s Marking . YYWW = Date Code Marking YY = Year (ex: 15 = 2015) WW = Week (01 to 53) 

**P4010S YYWW** 1 of 7 **www.diodes.com** 

DMP4010SK3Q Document number: DS38124 Rev. 1 - 2 

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**DMP4010SK3Q** 

## **Maximum Ratings** (@ TA = +25°C, unless otherwise specified.) 

|||||||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|-40|V|
|Gate-Source Voltage|||VGSS|±25|V|
|Continuous Drain Current (Note 7),VGS= -10V|Steady<br>State|TC= +25°C<br>TC= +70°C|ID|-50<br>-40|A|
||Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-15<br>-12|A|
|Pulsed Drain Current(10µs Pulse,DutyCycle = 1%)|||IDM|-100|A|
|Maximum BodyDiode Forward Current(Note 7)|||IS|-5.5|A|
|Avalanche Current,L = 1mH(Note 8)|||IAS|-22|A|
|Avalanche Energy,L = 1mH(Note 8)|||EAS|260|mJ|



## **Thermal Characteristics** (@ TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 6)||PD|1.7|W|
|Thermal Resistance,Junction to Ambient(Note 6)|SteadyState|RθJA|73|°C/W|
|Total Power Dissipation(Note 7)||PD|3.3|W|
|Thermal Resistance,Junction to Ambient(Note 7)|SteadyState|RθJA|38|°C/W|
|Thermal Resistance,Junction to Case||RθJC|1.0||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~———~~|**Symbol**<br>|**Min**<br>|**Typ**<br>|**Max**<br>|**Unit**<br>|**Test Condition**<br>|
|**OFF CHARACTERISTICS(Note 9)**<br>~~———~~|||||||
|Drain-Source Breakdown Voltage<br>~~———~~|BVDSS<br>|-40<br>|—<br>|—<br>|V<br>|VGS= 0V,ID= -250µA<br>|
|Zero Gate Voltage Drain Current<br>~~———~~|IDSS<br>|—<br>|—<br>|-1<br>|µA<br>|VDS= -40V,VGS= 0V<br>|
|Gate-Source Leakage<br>~~———~~|IGSS<br>|—<br>|—<br>|±100<br>|nA<br>|VGS= ±25V,VDS= 0V<br>|
|**ON CHARACTERISTICS(Note 9)**<br>~~———~~|||||||
|Gate Threshold Voltage<br>|VGS(TH)<br>|-1.5<br>|-2<br>|-2.5<br>|V<br>|VDS= VGS,ID= -250µA<br>|
|Static Drain-Source On-Resistance<br>|RDS(ON)<br>|—<br>|7.5<br>|9.9<br>|mΩ<br>|VGS= -10V,ID= -9.8A<br>|
|||—<br>|10.5<br>|14<br>||VGS= -4.5V,ID=  -9.8A<br>|
|Diode Forward Voltage<br>~~——~~|VSD<br>~~——~~|—<br>~~——~~|-0.7<br>~~——~~|-1<br>~~——~~|V<br>~~——~~|VGS= 0V,IS= -1A<br>~~——~~|
|**DYNAMIC CHARACTERISTICS(Note 10)**<br>~~——~~|||||||
|Input Capacitance<br>~~——~~|Ciss<br>~~——~~|—<br>~~——~~|4234<br>~~——~~|—<br>~~——~~|pF<br>~~——~~<br>~~GO~~|VDS= -20V, VGS= 0V<br>f = 1MHz<br>~~——~~|
|Output Capacitance<br>~~——~~|Coss<br>~~——~~|—<br>~~——~~|1036<br>~~——~~|—<br>~~——~~|||
|Reverse Transfer Capacitance<br>~~——~~<br>~~———~~|Crss<br>~~——~~|—<br>~~——~~|526<br>~~——~~<br>~~GO~~|—<br>~~——~~<br>~~GO~~|||
|Gate Resistance<br>~~GO~~<br>~~———~~|Rg<br>~~GO~~|—<br>~~GO~~|7.8<br>~~GO~~<br>~~GO~~|—<br>~~GO~~<br>~~GO~~<br>~~e~~|Ω<br>~~GO~~<br>~~GO~~<br>~~e~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~GO~~<br>~~ee~~|
|Total Gate Charge(VGS= -4.5V)<br>~~———~~|Qg|—|42.7<br>~~GO~~|—<br>~~GO~~<br>~~e~~|nC<br>~~GO~~<br>~~e~~|VDS= -20V,<br>ID= -9.8A<br>~~ee~~|
|Total Gate Charge(VGS= -10V)<br>~~———~~|Qg|—|91<br>~~GO~~|—<br>~~GO~~<br>~~e~~|||
|Gate-Source Charge<br>~~———~~|Qgs|—|14.2<br>~~GO~~|—<br>~~GO~~<br>~~e~~|||
|Gate-Drain Charge<br>~~———~~|Qgd|—|13.5<br>~~GO~~|—<br>~~GO~~<br>~~e~~|||
|Turn-On DelayTime<br>~~———~~<br>~~—_—~~|tD(ON)<br>~~—_—~~|—<br>~~—_—~~|13.2<br>~~GO~~<br>~~—_—~~|—<br>~~GO~~<br>~~e~~<br>~~—_—~~|ns<br>~~GO~~<br>~~e~~<br>~~—_—~~|VGS= -10V, VDD= -20V,<br>RG= 6Ω, ID= -1A<br>~~ee~~<br>~~—_—~~|
|Turn-On Rise Time<br>~~———~~<br>~~—_—~~|tR<br>~~—_—~~|—<br>~~—_—~~|10<br>~~GO~~<br>~~—_—~~|—<br>~~GO~~<br>~~e~~<br>~~—_—~~|||
|Turn-Off DelayTime<br>~~—_—~~|tD(OFF)<br>~~—_—~~|—<br>~~—_—~~|303<br>~~—_—~~|—<br>~~—_—~~|||
|Turn-Off Fall Time<br>~~—_—~~|tF<br>~~—_—~~|—<br>~~—_—~~|138<br>~~—_—~~|—<br>~~—_—~~|||
|Reverse RecoveryTime<br>~~—_—~~|tRR<br>~~—_—~~|—<br>~~—_—~~|26<br>~~—_—~~|—<br>~~—_—~~|ns<br>~~—_—~~|IF= -9.8A,di/dt = -100A/µs<br>~~—_—~~|
|Reverse RecoveryCharge|QRR|—|20|—|nC|IF= -9.8A,di/dt = -100A/µs|



7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 

8. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 

9. Short duration pulse test used to minimize self-heating effect. 

10. Guaranteed by design. Not subject to product testing. 

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30.0  20<br>VGS = -10.0V VDS= -5.0V<br>25.0  VGS = -5.0V 16<br>0) VGS =-4.5V eee |e<br>20.0  VGS =-4.0V<br>VGS =-3.5V 12<br>15.0  (a yp TA =150 ℃<br>8 TA =125 ℃ TA =85 ℃<br>10.0  | —_ VGS=-3.0V -<br>TA = 25 ℃<br>4 TA = -55 ℃<br>5.0<br>VGS=-2.5V<br>po 0 Sf<br>0.0<br>0 0.4 0.8 1.2 1.6 2 1 1.5 2 2.5 3 3.5 4<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic Figure 2.Typical Transfer Characteristic<br>0.014  0.03<br>0.025<br>0.012<br>0.02<br>0.010  VGS = -4.5V<br>0.015<br>0.008<br>0.01<br>VGS = -10V<br>0.006  0.005 ID = -9.8A<br>0.004  0<br>0 5 10 15 20 25 30 0 5 10 15 20 25<br>ID, DRAIN-SOURCE CURRENT (A)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs. Drain Current  Figure 4.Typical Transfer Characteristic<br>and Gate Voltage<br>0.018 1.8<br>VGS=-4.5VGS=-4.5V=-4.5V TA =150A =150 =150 ℃ VGS=-10V, ID = -9.8A<br>0.016 eee TA =125A =125 =125 ℃ 1.6 To T<br>TA =85A =85 =85 ℃<br>0.014 1.4<br>F e e CT<br>0.012 1.2<br>0.01 en e TA =25A =25 =25 ℃ 1 cap VGS=-4.5V, I ae D = -9.8A<br>0.008 FEE EE 0.8<br>TA =-55A =-55 =-55 ℃<br>0.006 a I ] 0.6 bPT CE be<br>0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT(A)D, DRAIN CURRENT(A), DRAIN CURRENT(A) TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 5. Typical On-Resistance vs. Drain Current  Figure 6.On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R DS(ON)<br>R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω) , DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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0.018<br>VGS=-4.5VGS=-4.5V=-4.5V TA =150A =150 =150 ℃<br>0.016 eee TA =125A =125 =125 ℃<br>TA =85A =85 =85 ℃<br>0.014<br>F e e<br>0.012<br>0.01 en e TA =25A =25 =25 ℃<br>0.008 FEE EE<br>TA =-55A =-55 =-55 ℃<br>a I<br>0.006<br>0 5 10 15 20 25 30<br>ID, DRAIN CURRENT(A)D, DRAIN CURRENT(A), DRAIN CURRENT(A)<br>Figure 5. Typical On-Resistance vs. Drain Current<br>and Temperature<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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0.02<br>2.2<br>0.018 TT ELLIE<br>2<br>0.016 ID = -1mA<br>0.014 eoEE 1.8 Se a w<br>0.012 a VGS=-4.5V, ID = -9.8A aa 1.6 a ID = -250μA = .<br>0.01<br>1.4<br>0.008<br>VGS=-10V, ID = -9.8A 1.2<br>0.006 e er] = ES S<br>a an tit<br>0.004 TEELLELEE, 1 PL tT LELEtt ir<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ( ℃ ) TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 7.On-Resistance Variation with Temperature Figure.8 Gate Threshold Variation vs. Junction<br>Temperature<br>30<br>10000<br>Ciss f=1MHz<br>25 AR =<br>VGS = 0V<br>20 AU —<br>Coss<br>u W N<br>15 TA = 85 [o] C 1000<br>Ip TA = 125 [o] C O e<br>10 TA = 150 [o] C TA = 25 [o] C Crss<br>5 FH HIT | TA = -55 [o] C —+ +<br>0 BS) 100  PEEL TLJ<br>0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 30<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9 . Diode Forward Voltage vs. Current Figure 10.  Typical Junction Capacitance<br>10 1000<br>RDS(ON)  PW =10µs PW =1µs<br>Limited<br>8 VDS = -20V, ID = -9.8A 100<br>6 10 PW =100µs<br>PW =1ms<br>4 1 PW =10ms<br>TJ(Max) = 150 ℃ PW =100ms DC<br>2 0.1 TA= 25 ℃<br>Single Pulse<br>DUT on Infinite Heatsink<br>0 0.01 VGS= -10V<br>0 20 40 60 80 100 120 0.1 1 10 100<br>Qg (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11.Gate Charge Figure 12. SOA, Safe Operation Area<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE  , GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>DS(ON) V<br>R<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>(V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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**DMP4010SK3Q** Cd 

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1<br>—— ETSa<br>Se<br>ee D=0.9 tH<br>D=0.5<br>er D=0.7<br><<“ CO Fit<br>D=0.3 HT TN | a | EIU TTTT<br>0.1 7<br>D=0.1 Ht<br>= cman 001° Oe |<br>e t<br>D=0.05 aeaee<br>S e<br>e ae<br>D=0.02<br>0.01<br>areee D=0.01 7 ANN<br>|pn| eyti A a eee Pe{T|<br>po A RθJA(t) = r(t) * RθJA |<br>D=0.005 RθJA= 2.72 ℃ /W<br>pee R c Duty Cycle, D = t1 / t2 Hl<br>D=Single Pulse<br>0.001<br>1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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**DMP4010SK3Q** 

## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 

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TO252 (DPAK)<br>**----- End of picture text -----**<br>


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E<br>A<br>b3 TO252 (DPAK)<br>7°± 1° Dim Min  Max  Typ<br>L3 c A  2.19  2.39  2.29<br>A1  0.00  0.13  0.08<br>A2  0.97  1.17  1.07<br>b  0.64  0.88 0.783<br>D b2  0.76  1.14  0.95<br>A2<br>L4 H b3  5.21  5.46  5.33<br>c  0.45  0.58 0.531<br>D  6.00 6.20 6.10<br>D1  5.21  -  -<br>e  -  -  2.286<br>E  6.45 6.70 6.58<br>e b(3x) E1  4.32  -  -<br>H  9.40 10.41 9.91<br>b2(2x)<br>L  1.40  1.78  1.59<br>0.508 L3  0.88  1.27  1.08<br>Gauge Plane<br>L4  0.64  1.02  0.83<br>a  0°  10°  -<br>E1 D1 Seating Plane All Dimensions in mm<br>L<br>A1<br>2.74REF<br>ge<br>Suggested Pad Layout<br>Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.<br>a<br>**----- End of picture text -----**<br>


**TO252 (DPAK)** 

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X1<br>Y1<br>Y2<br>C<br>na<br>Y<br>it X<br>**----- End of picture text -----**<br>


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Dimensions  Value (in mm)<br>C  4.572<br>X  1.060<br>X1  5.632<br>Y  2.600<br>Y1  5.700<br>Y2  10.700<br>**----- End of picture text -----**<br>


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## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2015, Diodes Incorporated 

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## Links

- [View this product on Novapart](https://novapart.co/products/DMP4010SK3Q-13/power-mosfet-p-channel-40-v-50-a-7500-ohm-to-252)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmp4010sk3q-13/mosfet-p-ch-40v-50a-to-252/dp/3943790)
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