# Dual MOSFET, P Channel, 30 V, 30 V, 550 mA, 550 mA

![Product image](https://novapart.co/image/farnell:3944150/)

**URL**: https://novapart.co/products/DMP31D7LDW-7/dual-mosfet-p-channel-30-v-550-ma
**SKU**: DMP31D7LDW-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €0.0680
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Transistor Case Style | SOT-363 |
| Operating Temperature Max | 150°C |
| Power Dissipation N Channel | 400mW |
| Power Dissipation P Channel | 400mW |
| Drain Source Voltage Vds N Channel | 30V |
| Drain Source Voltage Vds P Channel | 30V |
| Continuous Drain Current Id N Channel | 550mA |
| Continuous Drain Current Id P Channel | 550mA |
| Drain Source On State Resistance N Channel | - |
| Drain Source On State Resistance P Channel | 0.9ohm |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3944150/)

**DMP31D7LDW** 

**DUAL P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
|**BVDSS**<br>**RDS(ON) max**<br>**ID max**<br>**TA = +25°C**<br>-30V<br>0.9Ω @ VGS= -10V<br>-0.55A<br>1.7Ω @ VGS= -4.5V<br>-0.4A|||
|**BVDSS**|**RDS(ON) max**|**ID max**<br>**TA = +25°C**|
|-30V|0.9Ω @ VGS= -10V|-0.55A|
||1.7Ω @ VGS= -4.5V|-0.4A|



## **Features and Benefits** 

- Low On-Resistance 

- Low Input Capacitance 

- Fast Switching Speed 

- ESD Protected Gate 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Description and Applications** 

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. 

## **Mechanical Data** 

   - Case: SOT363 

   - Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

- Motor Control 

- Power Management Functions 

- DC-DC Converters 

- Terminal Connections Indicator: See Diagram 

- Terminals: Finish—Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

- Weight: 0.027 grams (Approximate) 

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SOT363<br>(Bs) wy,<br>ESD PROTECTED<br>Top View<br>**----- End of picture text -----**<br>


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Q1 P-Channel<br>**----- End of picture text -----**<br>


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D2 D1 G2 S2<br>G2<br>Gate Protection Diode S2 S1 G1 D2<br>Q2 P-Channel  Top View<br>Pin Out<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|
|---|---|---|
||||
|**Part Number**|**Case**|**Packaging**|
|DMP31D7LDW-7|SOT363|3,000/Tape &Reel|
|DMP31D7LDW-13|SOT363|10,000/Tape &Reel|



Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

AN2= Product Type Marking Code YM =Y or Y or ~~7~~ Date Code Marking Y ~~-~~ = Year (ex: G = 2019) M = Month (ex: 9 = September) 

|Date CodeKey|Date CodeKey||||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||**Year**||**2019**|||**2020**||||**2021**|||**2022**|||**2023**|||**2024**||**2025**|**2025**||**2026**|
||**Code**||G||||H|||I||||J||K||||L|M|||N|
||||||||||||||||||||||||||
||**Month**||**Jan**||**Feb**|||**Mar**||**Apr**|**May**|||**Jun**||**Jul**|**Aug**|||**Sep**|**Oct**|**Nov**||**Dec**|
||**Code**||1||2|||3||4||5||6||7|8|||9|O|N||D|



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**DMP31D7LDW** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|||||||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|-30|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (Note 6) VGS= -10V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-0.55<br>-0.44|A|
|Maximum Continuous BodyDiode Forward Current(Note 6)|||IS|-0.38|A|
|Pulsed Drain Current(10µs Pulse,DutyCycle = 1%)|||IDM|-2.4|A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)||PD|0.29|W|
|Thermal Resistance,Junction to Ambient(Note 5)|SteadyState|RϴJA|433|°C/W|
|Total Power Dissipation(Note 6)||PD|0.4|W|
|Thermal Resistance,Junction to Ambient(Note 6)|SteadyState|RϴJA|301|°C/W|
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



**Electrical Characteristics – P Channel** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics – P Channel** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics – P Channel** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics – P Channel** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics – P Channel** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics – P Channel** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics – P Channel** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics – P Channel** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~——~~|**Symbol**<br>~~——~~|**Min**<br>~~——~~|**Typ **<br>~~——~~|**Max**<br>~~——~~|**Unit**<br>~~——~~|**Test Condition**<br>~~——~~|
|**OFF CHARACTERISTICS(Note 7) **<br>~~——~~|||||||
|Drain-Source Breakdown Voltage<br>~~——~~|BVDSS<br>~~——~~|-30<br>~~——~~|—<br>~~——~~|—<br>~~——~~|V<br>~~——~~|VGS= 0V,ID= -250μA<br>~~——~~|
|Zero Gate Voltage Drain Current<br>~~——~~|IDSS<br>~~——~~|—<br>~~——~~|—<br>~~——~~<br>~~ff~~|-1<br>~~——~~<br>~~ff~~|μA<br>~~——~~<br>~~ff~~|VDS= -24V,VGS= 0V<br>~~——~~|
|Gate-Source Leakage<br>~~Cf~~|IGSS<br>~~Cf~~|—<br>~~Cf~~|—<br>~~Cf~~<br>~~ff~~|±10<br>~~Cf~~<br>~~ff~~|μA<br>~~Cf~~<br>~~ff~~|VGS= ±16V,VDS= 0V<br>~~Cf~~|
|**ON CHARACTERISTICS(Note 7) **<br>~~ff~~<br>~~i~~|||||||
|Gate Threshold Voltage<br>~~Cf~~<br>~~i~~|VGS(TH)<br>~~Cf~~<br>|-1<br>~~Cf~~<br>|-2.2<br>~~Cf~~<br>|-2.6<br>~~Cf~~<br>|V<br>~~Cf~~<br>|VDS= VGS,ID= -250μA<br>~~Cf~~<br>|
|Static Drain-Source On-Resistance<br>~~i —~~|RDS(ON)<br>~~—~~|—<br>~~—~~|0.5<br>~~—~~|0.9<br>~~—~~|Ω<br>~~—~~<br>~~ff~~|VGS= -10V,ID= -0.42A<br>~~—~~|
|||—<br>~~—~~|0.78<br>~~—~~<br>~~ff~~|1.7<br>~~—~~<br>~~ff~~||VGS= -4.5V,ID= -0.2A<br>~~—~~|
|Diode Forward Voltage<br>~~i~~<br>~~Cf~~|VSD<br><br>~~Cf~~|—<br><br>~~Cf~~|-0.8<br><br>~~Cf~~<br>~~ff~~|-1.2<br><br>~~Cf~~<br>~~ff~~|V<br><br>~~Cf~~<br>~~ff~~|VGS= 0V,IS= -0.23A<br><br>~~Cf~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~ff~~<br>~~eeeeeeeeee~~|||||||
|Input Capacitance<br>~~es~~|Ciss<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|19<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|pF<br>~~es~~<br>~~ee~~|VDS= -15V, VGS= 0V,<br>f = 1.0MHz<br>~~es~~|
|Output Capacitance<br>~~es~~|Coss<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|16<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|pF<br>~~es~~<br>~~ee~~||
|Reverse Transfer Capacitance<br>~~es~~|Crss<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|3<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|pF<br>~~es~~<br>~~ee~~||
|Gate Resistance<br>~~———~~|Rg<br>~~ee ~~|—<br> ~~ee ~~|4.4<br> ~~ee ~~|—<br> ~~ee ~~<br>~~ee~~|kΩ<br> ~~ee~~<br>~~ee~~|VDS= VGS= 0V,f = 1.0MHz<br>~~eee~~|
|Total Gate Charge(VGS= -4.5V)<br>~~———~~|Qg|—|0.36|—<br>~~ee~~|nC<br>~~ee~~|VDS= -10V, ID= -0.24A<br>~~eee~~<br>~~ee~~|
|Total Gate Charge(VGS= -10V)<br>~~———~~|Qg|—|0.8|—<br>~~ee~~|nC<br>~~ee~~||
|Gate-Source Charge<br>~~———~~|Qgs|—|0.1|—<br>~~ee~~|nC<br>~~ee~~||
|Gate-Drain Charge<br>~~———~~|Qgd<br>~~=~~|—<br>~~=~~|0.1<br>~~=~~|—<br>~~ee~~<br>~~=~~|nC<br>~~ee~~||
|Turn-On DelayTime<br>~~———~~<br>~~——————~~|tD(ON)<br>~~——————~~<br>~~=~~|—<br>~~——————~~<br>~~=~~|3.3<br>~~——————~~<br>~~=~~|—<br>~~ee~~<br>~~——————~~<br>~~=~~|ns<br>~~ee~~<br>~~——————~~|VGS= -10V, VDD= -15V,<br>ID= -0.5A, RG= 1Ω<br>~~eee~~<br>~~——————~~<br>~~ee~~|
|Turn-On Rise Time<br>~~———~~<br>~~——————~~|tR<br>~~——————~~<br>~~=~~|—<br>~~——————~~<br>~~=~~|2.3<br>~~——————~~<br>~~=~~|—<br>~~ee~~<br>~~——————~~<br>~~=~~|ns<br>~~ee~~<br>~~——————~~||
|Turn-Off DelayTime<br>~~——————~~|tD(OFF)<br>~~——————~~<br>~~=~~|—<br>~~——————~~<br>~~=~~|406<br>~~——————~~<br>~~=~~|—<br>~~——————~~<br>~~=~~|ns<br>~~——————~~||
|Turn-Off Fall Time<br>~~——————~~|tF<br>~~——————~~<br>~~=~~|—<br>~~——————~~<br>~~=~~|237<br>~~——————~~<br>~~=~~|—<br>~~——————~~<br>~~=~~|ns<br>~~——————~~||



6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1in square copper plate. 

7. Short duration pulse test used to minimize self-heating effect. 

8. Guaranteed by design. Not subject to product testing. 

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1 1<br>VDS = -5.0V<br>VGS = -4V<br>0.8 0.8<br>VGS = -4.5V<br>0.6 i V GS = -10V 0.6 j<br>VGS = -3.5V<br>TA = 85°C<br>0.4 0.4 TA  = 125°C TA  = 25°C<br>TA  = 150°C<br>0.2 of 0.2 T A  = -55°C<br>VGS = -3V<br>VGS = -2.8V<br>0 a 0<br>0 0.5 1 1.5 2 2.5 3 1.5 2 2.5 3 3.5 4<br>-VDS, DRAIN -SOURCE VOLTAGE (V) -VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristics Figure 2 Typical Transfer Characteristics<br>1.2 10<br>)<br>E( 1<br>CN 8 ID = -420mA<br>T [A]<br>[S] SEI 0.8 jf} VGS = -4.5V<br>[R] - 6 ID = -200mA<br>[N] O<br>E<br>C 0.6<br>R<br>[U] O Hee V = -10VGS 4 A<br>[S] -<br>e ee<br>[N] AI 0.4<br>R<br>D<br>, [)] O [(] NS 0.2 creer 2<br>RD<br>0<br>0 TPAC 0 LEH 2 4 6 8 10 JHE 12 14 16 18 20<br>0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1<br>-ID, DRAIN SOURCE CURRENT (A) -VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 4 Typical Drain-Source On-Resistance<br>Figure 3 Typical On-Resistance vs.<br>Drain Current and Gate Voltage  vs. Gate-Source Voltage<br>1.2 VGS = -10V 1.8<br>1 ToT 1.6 =6oo<br>TA = 150°C VGS = -10V<br>TA = 125°C ID = -420mA<br>0.8 oes 1.4 een<br>TA  = 85°C<br>0.6 T A  = 25°C 1.2<br>VGS = -4.5V<br>Peer) = LT AT<br>ID = -200mA<br>0.4 T A  = -55°C 1<br>0.2<br>0.8<br>0<br>0.1 POO 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0.6 Ae<br>-ID, DRAIN SOURCE CURRENT (A) -50 -25 0 25 50 75 100 125 150<br>Figure 5 Typical On-Resistance vs.  TJ, JUNCTION TEMPERATURE (C)<br>Drain Current and Temperature  Figure 6 On-Resistance Variation with Temperature<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (NORMALIZED)<br>)<br><br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>D<br>, DRAIN CURRENT (A)<br>-I D<br>, DRAIN CURRENT (A)<br>-I<br>)<br><br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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1.4 3<br>2.8 pt ft | |<br>1.2<br>VGS = -4.5V 2.6<br>1 | I D  = -200mA a. 2.4 a<br>2.2<br>0.8 TT er 2 a -I D  = 250µA<br>1.8<br>0.6 CT RTT) V GS  = -10V =|  EEE<br>ID = -420mA 1.6<br>0.4<br>1.4<br>eee | EEEEEE EE<br>1.2<br>0.2<br>rE ee yy CPP rrr<br>1<br>0 0.8<br>-50 PPE -25 0 25 EEE 50 75 100 EL 125 150 -50 ptes -25 | 0 25 | | 50 75 100 125 150<br>T , JUNCTION TEMPERATURE (J C) TA, AMBIENT TEMPERATURE (°C)<br>Figure 7 On-Resistance Variation with Temperature Figure 8 Gate Threshold Variation vs. Ambient Temperature<br>1 a 100 ————— f = 1MHz<br>0.8<br>TA= 150°C<br>Ciss<br>0.6 A T A = 125°C T A = 25°C a ee ee ee<br>TA = 85°C 10 Coss<br>TA = -55°C<br>==<br>TN SE<br>0.4<br>eea —<br>re<br>0.2 ee C rss<br>0 By 1<br>0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 30<br>-VSD, SOURCE-DRAIN VOLTAGE (V) -VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9 Diode Forward Voltage vs. Current Figure 10 Typical Junction Capacitance<br>10 10 RDS(on)<br>Limited PW = 100µs<br>PW = 1ms<br>8 / e e eel PW = 10ms<br>) [A] ( 1<br>T<br>N<br>6 TTT V ID DS  = -0.24A  = -10V ATTY] ERRUC 0.1 e PW e DC= 10s NOG oe<br>4 I [N] AR PWPW= 1s= 100ms<br>D<br>, D<br>2 - [I] 0.01 TJ(max) = 150°C<br>TA = 25°C<br>VGS = -10V<br>Single Pulse<br>0 0.001 DUT on 1 * MRP Board<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0.1 1 PLL THIE 10 FTI 100<br>Qg, TOTAL GATE CHARGE (nC) -VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11 Gate Charge Figure 12 SOA, Safe Operation Area<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>DS(on) V<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>S<br>, SOURCE CURRENT (A)<br>-I<br>, DRAIN CURRENT (A)<br>D<br>-I<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>V<br>, JUNCTION CAPACITANCE (pF)<br>CT<br>, GATE THRESHOLD VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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**DMP31D7LDW** [i 

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1 _ a D = 0.9 a ee ee aeeeeee een a<br>ee D = 0.7  ee ea ae col<br>RN D = 0.5 A<br>TTT D = 0.3 TTT tee ee ee ee<br>EO ee ee ee<br>0.1 UMee D = 0.1 | ce”ooeTAY TAL ETI TIT ETT il<br>LOT ert er i<br>a eo<br>mem D  ma = 0.05 0 RPMttAe||<br>ae aan ne eee eH ete<br>ST D = 0.02 eT TT eT<br>STMT<br>0.01 D = 0.01<br>Poteee eee AAee me aest meeeLAM meeTAttit eeAMeeri SSeeietETI SESELITETeEetiiiieeeettTAME ET ETTSSEHHii=SettToy<br>ee ly 2DT<br>PMR TT TTTTT<br>D = 0.005<br>re eH<br>Si D = Single Pulse ae ae a a R ƟJA(t) = r(t) * RƟJA<br>R ƟJA = 143°C/W<br>Duty Cycle, D = t1/ t2<br>0.001<br>1E-06 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 100000 1000000<br>t1, PULSE DURATION t1, PULSE DURATION TIME  (sec)S (sec)<br>Figure 13  Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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**DMP31D7LDW** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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SOT363<br>E poy E1 SOT363<br>Dim  Min  Max  Typ<br>A1  0.00  0.10  0.05<br>A2  0.90 1.00 0.95<br>b  0.10 0.30 0.25<br>F c 0.10 0.22  0.11<br>Col b D  1.80 2.20  2.15<br>E  2.00 2.20 2.10<br>E1  1.15 1.35 1.30<br>D<br>e  0.650 BSC<br>F  0.40 0.45 0.425<br>L  0.25  0.40  0.30<br>a 0° 8° --<br>A2<br>All Dimensions in mm<br>c a<br>A1 e L<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT363** 

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C<br>Value<br>Dimensions<br>(in mm)<br>C  0.650<br>Y1 o no. G G  1.300<br>X  0.420<br>Y  0.600<br>Y1  2.500<br>Y<br>maul X 1 ——<br>**----- End of picture text -----**<br>


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DMP31D7LDW Document number: DS41652 Rev. 4 - 2 

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## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A.   Life support devices or systems are devices or systems which: 

1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2019, Diodes Incorporated 

**www.diodes.com** 

7 of 7 **www.diodes.com** 

DMP31D7LDW Document number: DS41652 Rev. 4 - 2 

March 2019 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMP31D7LDW-7/dual-mosfet-p-channel-30-v-550-ma)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmp31d7ldw-7/mosfet-dual-p-ch-30v-0-5a/dp/3944150)
---

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