# Power MOSFET, P Channel, 30 V, 540 mA, 0.45 ohm, X2-DFN1006, Surface Mount

![Product image](https://novapart.co/image/farnell:3943782/)

**URL**: https://novapart.co/products/DMP31D0UFB4-7B/power-mosfet-p-channel-30-v-540-ma-045-ohm-x2
**SKU**: DMP31D0UFB4-7B
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1060
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 920mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | X2-DFN1006 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 540mA |
| Drain Source On State Resistance | 0.45ohm |
| Gate Source Threshold Voltage Max | 600mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943782/)

**DMP31D0UFB4** f **30V P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**Max RDS(ON)**|**Max ID**<br>@ TA= +25C|
|-30V|1@ VGS= -4.5V|-0.76A|
||1.5@ VGS = -2.5V|-0.62A|
||2 @ VGS = -1.8V|-0.54A|



## **Features and Benefits** 

- Footprint of just 0.6mm[2] – Thirteen Times Smaller than SOT23 

- 0.4mm Profile – Ideal for Low Profile Applications 

- Low Gate Threshold Voltage 

- Fast Switching Speed 

- ESD Protected Gate 2KV 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Description and Applications** 

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

- Load Switch in portable electronics 

## **Mechanical Data** 

- Case: X2-DFN1006-3 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish  NiPdAu over Copper Leadframe; Solderable per MIL-STD-202, Method 208 O **e4** 

- Terminal Connections: See Diagram 

- Weight: 0.001 grams (Approximate) 

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D<br>S G<br>D<br>G<br>GateDiodeProtection  S<br>Top View<br>Internal Schematic  Equivalent Circuit<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|
|---|---|---|---|---|
||||||
|**Part Number**|**Marking**|**Reel Size(inches)**|**Tape Width(mm)**|**Quantity per Reel**|
|DMP31D0UFB4-7B|P6|7|8|10,000|



Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

DMP31D0UFB4-7B 

**P6** P6 = Product Type Marking Code Top View Bar Denotes Gate And Source Side 

1 of 7 **www.diodes.com** 

DMP31D0UFB4 Datasheet number: DS35587 Rev. 2 - 2 

March 2016 © Diodes Incorporated 

**DMP31D0UFB4** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|
|||||
|**Characteristic**<br>**Symbol**||**mbol**<br>**Value**|**Unit**|
|Drain-Source Voltage<br>VDSS||DSS<br>-30|V|
|Gate-Source Voltage<br>VGSS||GSS<br>±8|V|
|Continuous Drain Current|Steady<br>State<br>TA = +25°C (Note 6)<br>TA = +85°C (Note 6)<br>TA = +25°C(Note 5)<br>ID|-0.76<br>-0.55<br>-0.54|A|
|Pulsed Drain Current(Note 7)<br>IDM||DM<br>2|A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||
|---|---|---|
|**Characteristic**<br>**Symbol**|**mbol**<br>**Value**|**Unit**|
|Power Dissipation<br>(Note 5)<br>PD<br>(Note 6)|D<br>0.46<br>0.92|W|
|Thermal Resistance, Junction to Ambient (Note 5)<br>RθJA<br>(Note 6)|θJA<br>271<br>136|°C/W|
|Operatingand Storage Temperature Range<br>TJ, TSTG|STG<br>-55 to +150|°C|



- Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate. 

7. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%. 

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109 OY<br>8 a \ AN a SinRJAgle Pulse = 262C/W |<br>CLIN LT EN UH RJA(t) = r(t) * RJA |<br>7 T J  - T A  = P * R JA(t)<br>6 CUIIN TT TIM TH |<br>5 BA 0<br>4 NT<br>\ a a a<br>3<br>LT a<br>2 STINET<br>ST TUM RLITITIN, TTTl<br>10 ICI Ttiit<br>0.001 LILI 0.01 0.1 1 ST 10 100 Tl 1,000<br>t1, PULSE DURATION TIME (sec)<br>Fig. 1 Single Pulse Maximum Power Dissipation<br>1<br>PT D = 0.7<br>D = 0.5<br>PtHve NEemir HHti ee<br>FH D = 0.3 SITE ECT TTT<br>0.1 PLAIN D = 0.1 ee [VM] [reo] A NUIT D = 0.9 UIE EATEN UT<br>Pe eae SE eee<br>Pert eeaee EEa OO 2 Oe<br>HAE D = 0.05 eA HE HI HE<br>AE AM<br>OD D = 0.02 i ar<br>Pll<br>0.01 BC D = 0.01 AIIM A TITLE UTI TTT LTT CUT ET<br>D = 0.005 R JA (t) = r(t) * R JA<br>aaa [yb [Ye] IT PEaPP RJA = 262 癈 °C/W / W Tn|<br>Duty Cycle, D = t1/ t2<br>Single Pulse<br>0.001<br>0.000001 rr 0.00001 CA 0.0001  COP 0.001 0.01 0.1 1 10 100 ail 1,000<br>t1, PULSE DURATION TIMES (sec)<br>Fig. 2 Transient Thermal Resistance<br>, PEAK TRANSIENT POIWER (W)<br>(PK)<br>P<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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DMP31D0UFB4 Datasheet number: DS35587 Rev. 2 - 2 

March 2016 © Diodes Incorporated 

**www.diodes.com** 

**DMP31D0UFB4** 

## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|||||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ **<br>**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 8) **||||||
|Drain-Source Breakdown Voltage|BVDSS|-30|-<br>-|V<br>VGS= 0V|= 0V,ID= -250μA|
|Zero Gate Voltage Drain Current TJ= +25°C|IDSS|-|-<br>-1|A<br>VDS= -30V|= -30V,VGS= 0V|
|Gate-Source Leakage|IGSS|-|-<br>±3|A<br>VGS= ±8V|= ±8V,VDS= 0V|
|**ON CHARACTERISTICS(Note 8) **<br>~~a~~<br>~~——.———~~||||||
|Gate Threshold Voltage<br>~~a~~|VGS(TH)|-0.5<br>~~——.———~~|-0.6<br>-1.1<br>~~——.———~~|V<br>VDS= V<br>~~——.———~~|= VGS,ID= -250μA<br>~~——.———~~|
|Static Drain-Source On-Resistance<br>~~a~~|RDS(ON)|-<br>~~——.———~~|0.45<br>1<br>~~——.———~~|<br>VGS= -4.5V<br>VGS= -2.5V<br>VGS= -1.8V<br>~~——.———~~|= -4.5V,ID= -400mA<br>~~——.———~~|
||||0.54<br>1.5<br>~~——.———~~||= -2.5V,ID= -200mA<br>~~——.———~~|
||||0.64<br>2<br>~~——.———~~||= -1.8V,ID= -100mA<br>~~——.———~~|
|Forward Transfer Admittance<br>~~a~~||Yfs||50<br>~~——.———~~|-<br>-<br>~~——.———~~|mS<br>VDS= -3V<br>~~——.———~~|= -3V,ID= -300mA<br>~~——.———~~|
|Diode Forward Voltage<br>~~a~~|VSD|-<br>~~——.———~~|-<br>-1.2<br>~~——.———~~|V<br>VGS= 0V<br>~~——.———~~|= 0V,IS= -300mA<br>~~——.———~~|
|**DYNAMIC CHARACTERISTICS** **(Note9)**||||||
|Input Capacitance<br>~~———~~|Ciss<br>~~———~~|-<br>~~———~~|76<br>150<br>~~———~~|pF<br>VDS= -15V, V<br>f = 1.0MHz<br>pF<br>pF<br>~~———~~|= -15V, VGS= 0V,<br>f = 1.0MHz<br>~~———~~|
|Output Capacitance<br>~~———~~|Coss<br>~~———~~|-<br>~~———~~|9<br>20<br>~~———~~|||
|Reverse Transfer Capacitance<br>~~———~~|Crss<br>~~———~~|-<br>~~———~~|6.43<br>15<br>~~———~~|||
|Gate Resistance<br>~~———~~<br>~~——~~|Rg<br>~~———~~|-<br>~~———~~|167<br>-<br>~~———~~<br>~~e~~|<br>VDS= 0V<br>~~———~~<br>~~e~~|= 0V,VGS= 0V,f = 1MHz<br>~~———~~<br>~~ee~~|
|Total Gate Charge<br>~~——~~|Qg||0.9<br>-<br>~~e~~|nC<br>VGS= -4.5V<br>~~e~~|= -4.5V,VDS= -15V,ID= -1A<br>~~ee~~|
|Total Gate Charge<br>~~——~~|Qg|-|1.5<br>-<br>~~e~~|nC<br>VGS= -8V, V<br>ID= -1A<br>nC<br>nC<br>~~e~~<br>~~ee~~|= -8V, VDS= -15V,<br>= -1A<br>~~ee~~<br>~~ee~~|
|Gate-Source Charge<br>~~——~~|Qgs|-|0.1<br>-<br>~~e~~|||
|Gate-Drain Charge<br>~~——~~<br>~~——————~~|Qgd|-|0.2<br>-<br>~~e~~<br>~~ee~~|||
|Turn-On DelayTime<br>~~——~~<br>~~——————~~|tD(ON)|-|4.98<br>-<br>~~e~~<br>~~ee~~|ns<br>VDD= -10V, R<br>VGS= -4.5V, R<br>ns<br>ns<br>ns<br>~~e~~<br>~~ee~~|= -10V, RL= 10 <br>= -4.5V, Rg= 6<br>~~ee~~<br>~~ee~~|
|Turn-On Rise Time<br>~~——~~<br>~~——————~~|tR|-|5.85<br>-<br>~~e~~<br>~~ee~~|||
|Turn-Off DelayTime<br>~~——————~~|tD(OFF)|-|35.7<br>-<br>~~ee~~|||
|Turn-Off Fall Time<br>~~——————~~|tF|-|16.6<br>-<br>~~ee~~|||



Notes: 8. Short duration pulse test used to minimize self-heating effect. 

9. Guaranteed by design. Not subject to product testing. 

## **Typical Electrical Characteristics** 

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1.0 1.0<br>VGS = 4.5V<br>0.8 0.8 V DS = -5.0V<br>VGS = 2.5V<br>VGS = 1.8V<br>0.6 fh . 0.6 fe<br>VGS = 1.5V<br>0.4 of{tit VGS = 1.2V 0.4 |<br>0.2 0.2 TA = 125TA = 150C C T A  = 85C<br>TA = 25C<br>TA = -55C<br>0 loJ 0 ff Ane<br>0 1 2 3 4 5 0 0.5 1.0 1.5 2.0<br>-VDS, DRAIN -SOURCE VOLTAGE (V) -VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 3 Typical Output Characteristics Fig. 4 Typical Transfer Characteristics<br>, DRAIN CURRENT (A)<br>D<br>-I<br>, DRAIN CURRENT (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


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DMP31D0UFB4 Datasheet number: DS35587 Rev. 2 - 2 

March 2016 © Diodes Incorporated 

**DMP31D0UFB4** 

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1.6 1.6<br>1.4 1.4<br>1.2 1.2<br>1.0 1.0<br>0.8 0.8<br>0.6 0.6<br>Sa ee ID= -100mAS SS<br>0.4 0.4<br>0.2 foo 0.2 CEEEE En<br>0 0<br>0 0.2 0.4 0.6 0.8 1.0 0 2 4 6 8<br>-ID, DRAIN SOURCE CURRENT (A) -VGS, GATE SOURCE VOLTAGE(V)GS, GATE SOURCE VOLTAGE(V), GATE SOURCE VOLTAGE(V)<br>Fig. 5 Typical On-Resistance vs.  Fig. 6 Typical On-Resistance vs.<br>Drain Current and Gate Voltage  Drain Current and Gate Voltage Gate Voltage<br>1.6 1.7<br>1.4 V GS = -4.5V<br>1.5<br>1.2 ae LL] ee<br>—_} 1.3 Ip = -500MA VA<br>1.0 ee | — A<br>Loo<br>0.8 T A  = 150C 1.1<br>0.6 TA = 125C<br>——— TA = 85C 0.9 TPT<br>0.4 a TA = 25  C TT<br>———_— TA = -55C 0.7 7<br>0.2 ———  a Fane<br>0 FF ff 0.5 EEL LEE LEE<br>0 0.2 0.4 0.6 0.8 1.0 -50 -25 0 25 50 75 100 125<br>-ID, DRAIN SOURCE CURRENT (A) TJ, JUNCTION TEMPERATURE (C)J, JUNCTION TEMPERATURE (C), JUNCTION TEMPERATURE (C)C)C)<br>Fig. 7 Typical On-Resistance vs.  Fig. 8 On-Resistance Variation with Temperature<br>Drain Current and Temperature<br>1.6 1.4<br>1.4 1.2<br>1.2<br>1.0<br>1.0<br>0.8<br>0.8 VIDGS  -250m=  -2.= 5VA<br>To i. 0.6 SECC PL<br>0.6 Ty | = ee<br>0.4<br>0.4 eek VGS = -4.5V ee<br>ID  -500m= A<br>0.2 eT 0.2 CCeLPT ee<br>0 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TA, AMBIENT TEMPERATURE (A, AMBIENT TEMPERATURE (, AMBIENT TEMPERATURE ( 癈 °C))<br>Fig. 9 On-Resistance Variation with Temperature Fig. 10 Gate Threshold Variation vs. Ambient Temperature<br>DS(on)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>RDS(ON) -<br>R<br>) )<br>,DRAIN-SOURCE ON-RESISTANCE ( ,DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>, GATE THRESHOLD VOLTAGE(V)<br>GS(TH)<br>V<br>)<br>, DRAIN-SOURCE ON-RESISTANCE(<br>DS(ON)<br>R<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br>


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1.6<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>ID= -100mAS SS<br>0.4<br>0.2 CEEEE En<br>0<br>0 2 4 6 8<br>-VGS, GATE SOURCE VOLTAGE(V)GS, GATE SOURCE VOLTAGE(V), GATE SOURCE VOLTAGE(V)<br>Fig. 6 Typical On-Resistance vs.<br>Drain Current and Gate Voltage Gate Voltage<br>1.7<br>1.5<br>LL] ee<br>1.3 Ip = -500MA VA<br>A<br>Loo<br>1.1<br>0.9 TPT<br>TT<br>7<br>0.7<br>Fane<br>0.5 EEL LEE LEE<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C)J, JUNCTION TEMPERATURE (C), JUNCTION TEMPERATURE (C)C)C)<br>Fig. 8 On-Resistance Variation with Temperature<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6 SECC PL<br>ee<br>0.4<br>ee<br>0.2 CCeLPT ee<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE (A, AMBIENT TEMPERATURE (, AMBIENT TEMPERATURE ( 癈 °C))<br>Fig. 10 Gate Threshold Variation vs. Ambient Temperature<br>-<br>)<br>,DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, GATE THRESHOLD VOLTAGE(V)<br>GS(TH)<br>V<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br>


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DMP31D0UFB4 

March 2016 

© Diodes Incorporated 

Datasheet number: DS35587 Rev. 2 - 2 

**DMP31D0UFB4** 

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1.0 120<br>f = 1MHz<br>100<br>0.8<br>80<br>0.6 Ta RE Ciss<br>60<br>0.4<br>ape Sete<br>40<br>0.2 iA<br>| | ) 20 Poorre<br>Coss<br>0 _2A 0 ———$ Crss<br>0.4 0.6 0.8 1.0 1.2 0 5 10 15 20 25 30<br>-VSD, SOURCE-DRAIN VOLTAGE (V) -VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 11 Diode Forward Voltage vs. Current Fig. 12 Typical Junction Capacitance<br>100,000 8<br>TA = 150 癈 ° C<br>10,000<br>====—— 6 4<br>1,000 TA = 125 癈 °C<br>T A  = 85 癈 °C<br>100 4<br>== |<br>10<br>—————— TA = 25 癈 ° C 2 Ane<br>1<br>0.1 ——————— 0<br>0 5 10 15 20 25 30 0 0.4 0.8 1.2 1.6 2.0<br>Fig. 13 Typical Drain-Source Leakage Current vs. Voltage-VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 14 Gate-Charge CharacteristicsQg, TOTAL GATE CHARGE (nC)<br>, LEAKAGE CURRENT (nA)<br>DSS<br>-I<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>-V<br>, SOURCE CURRENT (A)<br>S<br>-I<br>**----- End of picture text -----**<br>


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DMP31D0UFB4 Datasheet number: DS35587 Rev. 2 - 2 

March 2016 

© Diodes Incorporated 

**DMP31D0UFB4** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **X2-DFN1006-3** 

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A A1 X2-DFN1006-3<br>Dim  Min  Max  Typ<br>Seating Plane A  0.40<br>(Le 7 ———<br>A1  0.00 0.05 0.03<br>___ D t {+ b  0.10 0.20 0.15  —<br>Pin #1 ID b<br>b2  0.45 0.55 0.50<br>D  0.95 1.05 1.00<br>t y - EEE E  0.55 0.65 0.60<br>am ee e  -  -  0.35<br>E b2 e L1  0.20 0.30 0.25<br>L2  0.20 0.30 0.25<br>al re L3  ee -  ee -  0.40<br>z  0.02  0.08  0.05<br>z All Dimensions in mm<br>as L2 L3 L1 =<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**X2-DFN1006-3** 

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Y C<br>Dimensions  Value (in mm)<br>C  0.70<br>Y1 G1  0.30<br>G2  0.20<br>G2<br>X  0.40<br>X1  1.10<br>Y  0.25<br>X G1<br>fall ES Y1  0.70<br>X1<br>**----- End of picture text -----**<br>


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**DMP31D0UFB4** 

## **IMPORTANT NOTICE** 

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   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2016, Diodes Incorporated 

**www.diodes.com** 

7 of 7 **www.diodes.com** 

DMP31D0UFB4 Datasheet number: DS35587 Rev. 2 - 2 

March 2016 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMP31D0UFB4-7B/power-mosfet-p-channel-30-v-540-ma-045-ohm-x2)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmp31d0ufb4-7b/mosfet-p-ch-30v-0-54a-dfn1006/dp/3943782)
---

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