# Power MOSFET, P Channel, 30 V, 670 mA, 1 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:3943780RL/)

**URL**: https://novapart.co/products/DMP31D0U-7/power-mosfet-p-channel-30-v-670-ma-1-ohm-sot-23
**SKU**: DMP31D0U-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0960
**Stock**: 500+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 450mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 670mA |
| Drain Source On State Resistance | 1ohm |
| Gate Source Threshold Voltage Max | 1.1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943780RL/)

**DMP31D0U** 

**30V P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**BVDSS**<br>**Max RDS(ON)**<br>**Max ID**<br> @TA= 25°C<br>-30V<br>1Ω@VGS= -4.5V<br>-0.67A<br>1.5Ω@VGS = -2.5V<br>-0.54A<br>2Ω @VGS = -1.8V<br>-0.47A|**BVDSS**<br>**Max RDS(ON)**<br>**Max ID**<br> @TA= 25°C<br>-30V<br>1Ω@VGS= -4.5V<br>-0.67A<br>1.5Ω@VGS = -2.5V<br>-0.54A<br>2Ω @VGS = -1.8V<br>-0.47A|**BVDSS**<br>**Max RDS(ON)**<br>**Max ID**<br> @TA= 25°C<br>-30V<br>1Ω@VGS= -4.5V<br>-0.67A<br>1.5Ω@VGS = -2.5V<br>-0.54A<br>2Ω @VGS = -1.8V<br>-0.47A|
|---|---|---|
|**BVDSS**|**Max RDS(ON)**|**Max ID**<br> @TA= 25°C|
|-30V|1Ω@VGS= -4.5V|-0.67A|
||1.5Ω@VGS = -2.5V|-0.54A|
||2Ω @VGS = -1.8V|-0.47A|



## **Features and Benefits** 

- Low Gate Threshold Voltage 

- Fast Switching Speed 

- **ESD Protected Gate** 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Description and Applications** 

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

## **Mechanical Data** 

   - Case: SOT23 

   - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

- Load Switch in Portable Electronics 

- Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

- Terminals Connections: See Diagram Below 

- Weight: 0.009 grams (Approximate) 

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SOT23<br>**----- End of picture text -----**<br>


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D<br>D<br>G<br>G S Gate Protection Diode S<br>**----- End of picture text -----**<br>


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Top View<br>**----- End of picture text -----**<br>


Top View Equivalent Circuit Internal Schematic 

## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMP31D0U-7|SOT23|3,000/Tape &Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com/products/packages.html 

## **Marking Information** 

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P3U = Product Type Marking Code<br>YM = Date Code Marking<br>P3U<br>Y = Year (ex: Y = 2011)<br>M = Month (ex: 9 = September)<br>Date Code Key<br>Year 2011  ~  2016 2017 2018 2019 2020 2021 2022 2023<br>Code Y  ~  D  E  F  G  H  I  J  K<br>a<br>Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>Code 1  2  3 4  5 6 7  8 9 O N  D<br>H+} ++} __}- —_}+__|- + __}+__}- __} + _1<br>YM<br>**----- End of picture text -----**<br>


1 of 7 

DMP31D0U 

April 2016 © Diodes Incorporated 

**www.diodes.com** 

Datasheet number: DS35754 Rev. 2 - 2 

**DMP31D0U** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage||VDSS|-30|V|
|Gate-Source Voltage||VGSS|±8|V|
|Continuous Drain Current<br>Steady<br>State|Steady<br>TA = +25°C (Note 6)<br>TA = +85°C (Note 6)<br>TA = +25°C(Note 5)|ID|-0.67<br>-0.48<br>-0.53|A|
|Pulsed Drain Current(Note 7)||IDM|2.5|A|



**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Power Dissipation|(Note 5)<br>(Note 6)|PD|0.45|W|
||||0.71|W|
|Thermal Resistance, Junction to Ambient|Thermal Resistance, Junction to Ambient<br>(Note 5)<br>(Note 6)|RθJA|275|°C/W|
||||177|°C/W|
|Operatingand Storage Temperature Range||TJ, TSTG|-55 to +150|°C|



Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout 

6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided. 

7. Device mounted on minimum recommended pad layout test board, 10µs pulse duty cycle = 1%. 

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100<br>Single Pulse<br>90 Rthja = 176C/W<br>Rthja(t) = Rthja*r(t)<br>80 TJ - TA = P*Rthja (t)<br>70 Hi a A ai<br>60<br>50 SUM ATElJ  TTT ATTUII<br>40 ULMAMELIE<br>a TUT TTT TT<br>30<br>20<br>ST TL ET<br>10 UII LAM EITM TTL HIT<br>0 PUI LVL EINE ME TID on<br>0.001 0.01 0.1 1 10 100 1,000<br>T1, PULSE DURATION SECTION (sec)<br>Fig. 1 Single Maximum Power Dissipation<br>P(pk), PEAK TRANSIENT POWER (W)<br>**----- End of picture text -----**<br>


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1 SS eee ee ee ee ee ee  --ee oe<br>FH EESorte<br>ea ee eee OR ett ett tar | i rr oa oe<br>Le<br>r(t) @ D=0.5 TIE CENT eee LEI<br>Fo A TT)<br>PT TIT TEIesTIN, gee r(t) @ D=0.9 A| |<br>0.1 ce— r(t) @ D=0.3 ULIWATI A r(t) @ D=0.7 Se TL|ecLATTE ATL| Al||<br>SS<br>r(t) @ D=0.1 a<br>ESS EE<br>a tet | | Mai fT Ti<br>r(t) @ D=0.05 EHP EH HT<br>Fm, [EEA] | [ HATH] | | |<br>r(t) @ D=0.01 S002 GTTUN GM ON1(SMNO(1 NOON (R11 BROTHER BUTI<br>0.01<br>essa [tere] ET Ae [LM] ee [CIM] ME LTTE LUTTE LTTE Lil<br>r(t) @ D=0.01<br>OAEETTH SEHPn aeraFEE HH HTH Ee<br>PT TTT RAPT PTT Hl<br>r(t) @ D=0.005 RJA (t) = r(t)*RJA<br>EAH HHH RJA = 176C/W il<br>Duty Cycle, D = t1/t2<br>r(t) @ D=Single Pulse<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (sec)<br>Fig. 2 Transient Thermal Resistance<br>R(t), TRANSIENT THERMAL RESISITANCE<br>**----- End of picture text -----**<br>


2 of 7 **www.diodes.com** 

DMP31D0U Datasheet number: DS35754 Rev. 2 - 2 

April 2016 © Diodes Incorporated 

**DMP31D0U** 

## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**|**Symbol**|**Min**|**Typ **<br>**Max**|**Unit**<br>**Test Condition**|
|**OFF CHARACTERISTICS** (Note 8)|||||
|Drain-Source Breakdown Voltage|BVDSS|-30|—<br>—|V<br>VGS= 0V,ID= -250μA|
|Zero Gate Voltage Drain Current TJ= 25°C|IDSS|—|—<br>-1|μA<br>VDS= -30V,VGS= 0V|
|Gate-Source Leakage|IGSS|—|—<br>±3|μA<br>VGS= ±8V,VDS= 0V|
|**ON CHARACTERISTICS**(Note 8)|||||
|Gate Threshold Voltage<br>~~2~~|VGS(TH)<br>~~2~~|-0.5<br>~~2~~|—<br>-1.1<br>~~2~~|V<br>VDS= VGS,ID= -250μA<br>~~2~~|
|Static Drain-Source On-Resistance<br>~~2~~|RDS (ON)<br>~~2~~|—<br>~~2~~|—<br>1<br>1.5<br>2<br>~~2~~|Ω<br>VGS= -4.5V,ID= -400mA<br>VGS= -2.5V,ID= -200mA<br>VGS= -1.8V,ID= -100mA<br>~~2~~|
|Forward Transfer Admittance<br>~~2~~||YFS|<br>~~2~~|50<br>~~2~~|—<br>—<br>~~2~~|mS<br>VDS= -3V,ID= -300mA<br>~~2~~|
|Diode Forward Voltage|VSD|—|—<br>-1.2|V<br>VGS= 0V,IS= -300mA|
|**DYNAMIC CHARACTERISTICS**(Note 9)|||||
|Input Capacitance<br>~~———~~|CISS<br>~~———~~|—<br>~~———~~|76<br>150<br>~~———~~|pF<br>VDS= -15V, VGS= 0V,<br>f = 1.0MHz<br>pF<br>pF<br>~~———~~|
|Output Capacitance<br>~~———~~|COSS<br>~~———~~|—<br>~~———~~|9<br>—<br>~~———~~||
|Reverse Transfer Capacitance<br>~~———~~|CRSS<br>~~———~~|—<br>~~———~~|6.43<br>—<br>~~———~~||
|Gate Resistance<br>~~———~~<br>~~———~~|RG<br>~~———~~|—<br>~~———~~|167<br>—<br>~~———~~<br>~~e~~|Ω<br>VDS= 0V,VGS= 0V,f = 1MHz<br>~~———~~<br>~~ee~~|
|Total Gate Charge<br>~~———~~|QG|—|0.9<br>—<br>~~e~~|nC<br>VGS= -4.5V,VDS= -15V,ID= -1A<br>~~ee~~|
|Total Gate Charge<br>~~———~~|QG|—|1.5<br>—<br>~~e~~|nC<br>VGS= -8V, VDS= -15V,<br>ID= -1A<br>nC<br>nC<br>~~ee~~<br>~~eee~~|
|Gate-Source Charge<br>~~———~~|QGS|—|0.1<br>—<br>~~e~~||
|Gate-Drain Charge<br>~~———~~<br>~~—_———~~|QGD|—|0.2<br>—<br>~~e~~<br>~~eee~~||
|Turn-On DelayTime<br>~~———~~<br>~~—_———~~|tD(ON)|—|5.0<br>—<br>~~e~~<br>~~eee~~|ns<br>VDD= -10V, RL= 10Ω<br>VGS= -4.5V, RG= 6Ω<br>ns<br>ns<br>ns<br>~~ee~~<br>~~eee~~|
|Turn-On Rise Time<br>~~———~~<br>~~—_———~~|tR|—|5.9<br>—<br>~~e~~<br>~~eee~~||
|Turn-Off DelayTime<br>~~—_———~~|tD(OFF)|—|35.7<br>—<br>~~eee~~||
|Turn-Off Fall Time<br>~~—_———~~|tF|—|16.7<br>—<br>~~eee~~||



Notes: 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 

**Typical Electrical Characteristics** 

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**----- Start of picture text -----**<br>
1.0 1.0<br>VGS = 4.5V<br>0.8 fe 0.8 V DS = -5.0V of<br>VGS = 2.5V<br>VGS = 1.8V<br>0.6 wo VGS = 1.5V 0.6 aoe<br>0.4 VGS = 1.2V 0.4<br>er<br>0.2 0.2 TA = 125TA = 150C C T A  = 85C<br>TA = 25C<br>TA = -55C<br>0 loPo 0 ff.<br>0 1 2 3 4 5 0 0.5 1.0 1.5 2.0<br>-VDS, DRAIN -SOURCE VOLTAGE (V) -VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 3 Typical Output Characteristics Fig. 4 Typical Transfer Characteristics<br>, DRAIN CURRENT (A)<br>D<br>-I<br>, DRAIN CURRENT (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


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DMP31D0U Datasheet number: DS35754 Rev. 2 - 2 

April 2016 © Diodes Incorporated 

**DMP31D0U** 

**==> picture [479 x 664] intentionally omitted <==**

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1.6 1.6<br>1.4 1.1L 1.4 TLE LLL<br>1.2 1.2<br>1.0 1.0<br>0.8 0.8<br>0.6 0.6<br>See CWE<br>2 5v |<br>0.4 Voss 0.4 vm<br>0.2 SS 0.2 HARES<br>0 0<br>0 0.2 0.4 0.6 0.8 1.0 0 2 4 6 8<br>-ID, DRAIN SOURCE CURRENT (A) -VGS, GATE SOURCE VOLTAGE(V)<br>Fig. 5 Typical On-Resistance vs.  Fig. 6 Typical On-Resistance vs.<br>Drain Current and Gate Voltage  Drain Current and Gate Voltage<br>1.6 1.7<br>Ip = - 500MA<br>1.4 V GS = -4.5V<br>1.5<br>1.2 ee Saaae-.<br>1.3<br>1.0 ee+ +4 Baeenece<br>ee Yo.<br>0.8 T A  = 150C 1.1<br>0.6 TA = 125C<br>——— TA = 85C 0.9 ae 4a<br>0.4 ee TA = 25  C ma<br>TA = -55C 0.7<br>0.2 SSS Fann<br>0 ee ee 0.5 EEL LLL<br>0 0.2 0.4 0.6 0.8 1.0 -50 -25 0 25 50 75 100 125 150<br>-ID, DRAIN SOURCE CURRENT (A) TJ, JUNCTION TEMPERATURE (C)<br>Fig. 7 Typical On-Resistance vs.  Fig. 8 On-Resistance Variation with Temperature<br>Drain Current and Temperature<br>1.6 1.4<br>1.4 1.2<br>1.2<br>1.0<br>1.0<br>0.8<br>0.8 VIDGS  -250m=  -2.= 5VA<br>0.6<br>0.6 CHheee BRR<br>0.4<br>0.4 oe VGS = -4.5V a.<br>ID  -500m= A<br>0.2 ee 0.2 PTEE rtyr<br>0 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TA, AMBIENT TEMPERATURE (°C)<br>Fig. 9 On-Resistance Variation with Temperature Fig. 10 Gate Threshold Variation vs. Ambient Temperature<br>)<br>, DRAIN-SOURCE ON-RESISTANCE(<br>DS(ON)<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(on)<br>R<br>)<br>,DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>)<br>,DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>, GATE THRESHOLD VOLTAGE(V)<br>GS(TH)<br>V<br>DS(ON)<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br>


4 of 7 **www.diodes.com** 

DMP31D0U 

April 2016 

© Diodes Incorporated 

Datasheet number: DS35754 Rev. 2 - 2 

**DMP31D0U** 

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1.0 120<br>f = 1MHz<br>100<br>i aaa<br>0.8<br>80<br>0.6 Ciss<br>60<br>0.4 pt} | |. et<br>Yt} 40 Ppp<br>0.2<br>20<br>Coss<br>TAT) qo<br>0 ee 0 Crss<br>0.4 0.6 0.8 1.0 1.2 0 5 10 15 20 25 30<br>-VSD, SOURCE-DRAIN VOLTAGE (V) -VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 11 Diode Forward Voltage vs. Current Fig. 12 Typical Junction Capacitance<br>100,000 8<br>TA = 150 ° C<br>10,000<br>6<br>1,000 TA = 125°C<br>T A  = 85°C<br>100 4<br>10<br>TA = 25 ° C 2<br>1<br>0.1 —————— 0<br>0 5 10 15 20 25 30 0 0.4 0.8 1.2 1.6 2.0<br>Fig. 13 Typical Drain-Source Leakage Current vs. Voltage-VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 14 Gate-Charge CharacteristicsQg, TOTAL GATE CHARGE (nC)<br>, LEAKAGE CURRENT (nA)<br>DSS<br>-I<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>-V<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, SOURCE CURRENT (A)<br>-I<br>S<br>**----- End of picture text -----**<br>


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DMP31D0U Datasheet number: DS35754 Rev. 2 - 2 

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**DMP31D0U** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **SOT23** 

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**----- Start of picture text -----**<br>
All 7°<br>H<br>SOT23<br>GAUGE PLANE<br>0.25 Dim  Min  Max  Typ<br>J A  0.37  0.51  0.40<br>K1 K<br>B  1.20  1.40  1.30<br>C  2.30  2.50  2.40<br>a D  0.89 1.03 0.915<br>A M F  0.45 0.60 0.535<br>we L — L1 SES G  1.78 2.05 1.83<br>H  2.80 3.00 2.90<br>J  0.013  0.10  0.05<br>K  0.890  1.00  0.975<br>C B K1  0.903  1.10  1.025<br>L  0.45  0.61  0.55<br>“oS oe<br>L1  0.25  0.55  0.40<br>M  0.085 0.150 0.110<br>o b ——<br>D a  0°  8°  –<br>F G BEES All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT23** 

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**----- Start of picture text -----**<br>
Y<br>Y1 a C<br>aaE<br>a X X1<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value(in mm)**|
|---|---|
|**C**|2.0|
|**X**|0.8|
|**X1**|1.35|
|**Y**|0.9|
|**Y1**|2.9|



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DMP31D0U Datasheet number: DS35754 Rev. 2 - 2 

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**DMP31D0U** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

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Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

A.   Life support devices or systems are devices or systems which: 

1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the        failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2016, Diodes Incorporated 

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April 2016 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMP31D0U-7/power-mosfet-p-channel-30-v-670-ma-1-ohm-sot-23)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmp31d0u-7/mosfet-p-ch-30v-0-67a-sot-23/dp/3943780RL)
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