# Power MOSFET, P Channel, 30 V, 3.5 A, 0.077 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:1858649RL/)

**URL**: https://novapart.co/products/DMP3130L-7/power-mosfet-p-channel-30-v-35-a-0077-ohm-sot-23
**SKU**: DMP3130L-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1080
**Stock**: 10+
**Lead Time**: 106 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.059ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-600mV; Po

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.4W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 3.5A |
| Drain Source On State Resistance | 0.077ohm |
| Gate Source Threshold Voltage Max | 600mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1858649RL/)

**DMP3130L** 

**P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

## **Features and Benefits** 

- Low On-Resistance: 

|**V(BR)DSS**|**RDS(on) max**|**ID**<br>**TA = 25°C**|
|---|---|---|
|-30V|77mΩ@VGS= -10V|-3.5A|
||95mΩ@VGS= -4.5V|-3.0A|
||150mΩ@VGS= -2.5V|-2.4A|



- Low Gate Threshold Voltage 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 standards for High Reliability** 

## **Description and Applications** 

This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

- DC-DC Converters 

- Power management functions 

- Analog Switch 

## **Mechanical Data** 

- Case: SOT23 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 

- Terminal Connections: See Diagram 

- Weight: 0.008 grams (approximate) 

|||Drain||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|SOT23<br>m|D<br>G<br>S<br>Source<br>Gate<br> ~~ab ~~oh|||||||||||||
|Top View|Equivalent Circuit||Equivalent Circuit||||Top View|||||||
|**Information** (Note 4)||||||||||||||
|||||||||||||||
|**Part Number**||**Case**||||||||**Packaging**||||
|DMP3130L-7||SOT23|||||||3000/Tape&Reel|||||



## **Ordering Information** (Note 4) 

- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com/products/packages.html 

## **Marking Information** 

||||||P5S = Product Type Marking Code<br>YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)<br>Y̅ M = Date Code Marking for CAT (Chengdu Assembly/ Test site)<br>Y or Y̅ = Year (ex: A = 2013)<br>**P5S**<br>**YM**<br>~~-~~|
|---|---|---|---|---|---|
||||||M = Month (ex: 9 = September)|
|||**Chengdu A/T Site**|||**Shanghai A/T Site**|
|Date Code Key<br>**Year**<br>**2008**<br>**2009**<br>**2010**<br>**2011**<br>**2012**<br>**2013**<br>**2014**<br>**2015**<br>**2016**<br>**2017**<br>**2018**<br>**Code**<br>V<br>W<br>X<br>Y<br>Z<br>A<br>B<br>C<br>D<br>E<br>F<br>~~{|__|~~<br>~~__}¥___}- __}- __}/ __} _}/ _} |~~||||||
|**Month**<br>**Jan**<br>**Feb**<br>**Code**<br>1<br>2<br>~~H—_}+—_+_ ~~|||~~+ ~~||**Mar**<br>**Apr**<br>**May**<br>**Jun**<br>**Jul**<br>**Aug**<br>**Sep**<br>**Oct**<br>**Nov**<br>**Dec**<br>3<br>4<br>5<br>6<br>7<br>8<br>9<br>O<br>N<br>D<br> ~~—_|#__+¥ |__|} __+_|} +} _1~~|
||DMP3130L||||1 of 6<br>October 2013|
||Document number: DS31524 Rev. 6 - 2||||**www.diodes.com**<br>© Diodes Incorporated|



**DMP3130L** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Units**|
|Drain-Source Voltage|||VDSS|-30|V|
|Gate-Source Voltage|||VGSS|12|V|
|Continuous Drain Current (Note 5) VGS= -4.5V|Steady<br>State|TA= 25C<br>TA= 70C|ID|-3.5<br>-2.6|A|
||t<10s|TA= 25C<br>TA= 70C|ID|-4.1<br>-3.2|A|
|Maximum Continuous BodyDiode Forward Current(Note 5)|||IS|-1.6|A|
|Pulsed Drain Current(10μspulse,dutycycle = 1%)|||IDM|-20|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Units**|
|Total Power Dissipation (Note 5)|TA= 25°C|PD|0.7|W|
||TA= 70°C||0.4||
|Thermal Resistance, Junction to Ambient (Note 5)|SteadyState|RJA|184|°C/W|
||t<10s||115||
|Total Power Dissipation (Note 6)|TA= 25°C|PD|1.3|W|
||TA= 70°C||0.8||
|Thermal Resistance, Junction to Ambient (Note 6)|SteadyState|RJA|94|°C/W|
||t<10s||61||
|Thermal Resistance,Junction to Case||RJC|25||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to 150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

||||||||
|---|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7)**|||||||
|Drain-Source Breakdown Voltage|BVDSS|-30|||V|VGS= 0V,ID= -250μA|
|Zero Gate Voltage Drain Current|IDSS|||-1|μA|VDS= -30V,VGS= 0V|
|Gate-BodyLeakage|IGSS|||100|nA|VGS= ±12V,VDS= 0V|
|**ON CHARACTERISTICS(Note 7)**|||||||
|Gate Threshold Voltage<br>~~==.~~|VGS(th)<br>~~==.~~|-0.6<br>~~==.~~|<br>~~==.~~|-1.3<br>~~==.~~|V<br>~~==.~~|VDS= VGS,ID= -250μA<br>~~==.~~|
|Static Drain-Source On-Resistance<br>~~==.~~|RDS (ON)<br>~~==.~~|<br>~~==.~~|59<br>~~==.~~|77<br>~~==.~~|mΩ<br>~~==.~~|VGS= -10V,ID= -4.2A<br>~~==.~~|
|||<br>~~==.~~|73<br>~~==.~~|95<br>~~==.~~||VGS= -4.5V,ID= -4A<br>~~==.~~|
|||<br>~~==.~~|115<br>~~==.~~|150<br>~~==.~~||VGS= -2.5V,ID= -3A<br>~~==.~~|
|Forward Transconductance<br>~~==.~~|gfs<br>~~==.~~|<br>~~==.~~|8<br>~~==.~~|<br>~~==.~~|S<br>~~==.~~|VDS= -5V,ID= -4A<br>~~==.~~|
|Source-Drain Diode Forward Voltage|VSD||0.8|-1.25|V|VGS= 0V,IS= -3.0A|
|**DYNAMIC CHARACTERISTICS(Note 8)**|||||||
|Input Capacitance<br>~~ee~~|Ciss<br>~~ee~~|<br>~~ee~~|432<br>~~ee~~|864<br>~~ee~~|pF<br>~~ee~~|VDS= -15V, VGS= 0V<br>f = 1.0MHz<br>~~ee~~<br>~~==~~|
|Output Capacitance<br>~~ee~~|Coss<br>~~ee~~|<br>~~ee~~|87<br>~~ee~~|174<br>~~ee~~|pF<br>~~ee~~||
|Reverse Transfer Capacitance<br>~~ee~~<br>~~ee~~|Crss<br>~~ee~~<br>~~ee~~|<br>~~ee~~|62<br>~~ee~~|124<br>~~ee~~|pF<br>~~ee~~||
|Gate Resistance<br>~~ee~~<br>~~ee~~|RG<br>~~ee~~<br>~~ee~~|<br>~~ee~~|4.04<br>~~ee~~|<br>~~ee~~|Ω<br>~~ee~~|VDS= 0V,VGS= 0V,f = 1.0MHz<br>~~ee~~<br>~~==~~|
|**SWITCHING CHARACTERISTICS(Note 8)**<br>~~ES~~<br>~~==~~<br>~~ee~~|||||||
|Total Gate Charge<br>~~ES~~<br>~~ee~~|QG<br>~~ES~~<br>~~ee~~|<br>~~ES~~|5.9<br>~~ES~~|11.8<br>~~ES~~|nC<br>~~ES~~<br>~~ee~~|VDS= -15V,VGS= -4.5V,ID= -4.0A<br>~~ES~~<br>~~==~~|
|||<br>~~ES~~|12<br>~~ES~~|24<br>~~ES~~||VDS= -15V,VGS= -10V,ID= -4.0A<br>~~ES~~<br>~~==~~|
|Gate-Source Charge<br>~~ee~~|QGS<br>~~ee~~||1.0|2.0||VDS= -15V, VGS= -4.5V, ID= -4.0A<br>~~==~~<br>~~ee~~|
|Gate-Drain Charge<br>~~ee~~<br>~~————~~|QGD<br>~~ee~~||3.1|6.2|||
|Turn-On DelayTime<br>~~ee~~<br>~~————~~|td(on)<br>~~ee~~||4.6|9.2|ns<br>~~ee~~|VDS= -15V, VGS= -10V,<br>ID= -1A, RG= 6.0Ω<br>~~==~~<br>~~ee~~|
|Rise Time<br>~~ee~~<br>~~————~~|tr<br>~~ee~~||6.5|13.0|||
|Turn-Off DelayTime<br>~~————~~|td(off)||27.8|55.6|||
|Fall Time<br>~~————~~|tf||15.0|30.0|||



Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate 

7. Short duration pulse test used to minimize self-heating effect. 

8. Guaranteed by design. Not subject to production testing 

2 of 6 **www.diodes.com** 

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**DMP3130L** 

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**----- Start of picture text -----**<br>
12 -VGS = 10V 8<br>-VGS = 4.5V<br>V DS = -5.0V<br>10 -V GS = 4.0V<br>-VGS = 3.5V 6<br>- -VGS = 3.0V | a aa<br>8<br>Fo -VGS = 2.5V<br>6 -VGS = 2.0V 4<br>4<br>eth | EE EEE<br>2 2 TA = 150C TA = 85C<br>-VGS = 1.5V TA = 125C T A  = 25C<br>POC) = a TA = -55C<br>0 YT ee 0 ae<br>0 1 2 3 4 5 0 0.5 1.0 1.5 2.0 2.5 3.0<br>-VDS, DRAIN -SOURCE VOLTAGE(V) -VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 1 Typical Output Characteristics Fig. 2  Typical Transfer Characteristics<br>0.14 0.20<br>V GS = -4.5V<br>0.12 | ft ff ff td<br>0.16<br>0.10<br>Soe EEE TA = 150C<br>0.12<br>0.08 ee ——ee TA = 125C<br>TA = 85C<br>0.06 SSS 0.08 OSS<br>TA = 25C<br>0.04<br>0.04 TA = -55C<br>oe =<br>0.02<br>0 EL, 0 SSE<br>0 2 4 6 8 10 0 2 4 6 8 10 12<br>-ID, DRAIN SOURCE CURRENT -ID, DRAIN SOURCE CURRENT (A)<br>Fig. 3  Typical On-Resistance vs.  Fig. 4  Typical On-Resistance vs.<br>Drain Current and Gate Voltage  Drain Current and Temperature<br>1.6 0.20<br>1.4 0.16<br>BRRRE>, e eeene -V-IDGS  3.0=   2= A.5V<br>1.2 0.12<br>ise et<br>1.0 0.08 -V GS = 4.5V<br>-ID  5= A<br>0.8 ATT 0.04 eae<br>a) EET<br>0.6 0 OEE<br>-50 TTT -25 0 25 50 [EEE}] 75 100 125 150 -50 -25 0 T 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)<br>Fig. 5  On-Resistance Variation with Temperature Fig. 6  On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>D D<br>-I -I<br>) , DRAIN-SOURCE ON-RESISTANCE()<br>,DRAIN-SOURCE ON-RESISTANCE(<br>DS(ON)<br>DS(ON) R<br>R<br>)<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (Normalized)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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DMP3130L Document number: DS31524 Rev. 6 - 2 

October 2013 © Diodes Incorporated 

**www.diodes.com** 

**DMP3130L** | 

**==> picture [381 x 441] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.6 12<br>10<br>1.2<br>8<br>0.8 6<br>4<br>0.4<br>2<br>0 0<br>-50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6<br>TA, AMBIENT TEMPERATURE (°C) -VSDSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature<br>10,000 eees 10<br>f = 1MHz<br>————<br>ee a<br>se<br>1,000 fF | | | | | 86<br>[$e Ciss 6 a Vpg = = -<br>———— lp  =-4AA<br>aa GGGO||<br>4<br>100 a<br>aa | |<br>Coss<br>POE SSS 2<br>C rss<br>op<br>10  FP | | | ft ft 0<br>0 5 10 15 20 25 30 0 5<br>-VDS, DRAIN-SOURCE VOLTAGE (V) Qgg, TOTAL GATE CHARGE (nC)<br>Fig. 9 Typical Junction Capacitance<br>, SOURCE CURRENT (A)<br>S<br>, GATE THRESHOLD VOLTAGE(V) -I<br>GS(TH)<br>V<br>, JUNCTION CAPACITANCE (pF) , GATE-SOURCE VOLTAGE (V)<br>T GS<br>C V<br>**----- End of picture text -----**<br>


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12<br>10<br>8<br>6<br>4<br>2<br>0<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4<br>-VSDSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 8 Diode Forward Voltage vs. Current<br>10<br>86 a Vpg = = - 15V Jo (<br>lp  =-4AA<br>4<br>2<br>0<br>0 5 10 15 20<br>Qgg, TOTAL GATE CHARGE (nC)<br>Fig. 10 Gate-Charge Characteristics<br>, SOURCE CURRENT (A)<br>S<br>-I<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


**==> picture [210 x 210] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 ee Od ee<br>Se<br>fT TT ry<br>RDS(on) PW = 10µs<br>10 IRSPPSSH Limited LatNUITISSNSSeS<br>—— aee<br>pf tae NE NEEETEN EJoeeeHBRG<br>RRR ENTS<br>1 sa— DC SNPa a” ae Nee see oo oeII<br>ee[| PW =P 10s W  = 1s SNNANTONey See ee<br>P W  = 100ms<br>0.1 (| TJ(max) = 150°C cf | P W = 10ms PW NOK  = 1ms SSOBRB<br>TA = 25°C PW = 100µs<br>VGS = -8V ———[TT ~~esArt<br>Single Pulse<br>DUT on 1 * MRP Board<br>0.01 in<br>0.1 1 10 100<br>-VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 11 SOA, Safe Operation Area<br>, DRAIN CURRENT (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


4 of 6 **www.diodes.com** 

DMP3130L Document number: DS31524 Rev. 6 - 2 

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**DMP3130L** 

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**----- Start of picture text -----**<br>
1<br>D = 0.9<br>D = 0.7<br>D = 0.5<br>ce<br>SO D = 0.3 ee<br>TT TT eeeYE<br>0.1<br>D = 0.1<br>D = 0.05<br>Co LA<br>I D = 0.02 ca ta<br>0.01<br>D = 0.01<br>RJA(t)=r(t) * RJA<br>Si D = 0.005 Sc Se R JA =176°C/W<br>Duty Cycle, D=t1/ t2<br>IE EET TE] Mill<br>Single Pulse<br>0.001 Pcemulll LEPINE | ERIE LUTE CTE LTT Hil<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIMES (sec)<br>Fig. 12 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 

**==> picture [467 x 403] intentionally omitted <==**

**----- Start of picture text -----**<br>
a n e re SOT23<br>Dim  Min  Max  Typ<br>A  0.37  0.51  0.40<br>J ee B  1.20  ee 1.40  ee 1.30  ee<br>C  2.30  2.50  2.40<br>D  0.89  1.03  0.915<br>F  0.45  0.60  0.535<br>G  1.78  2.05  1.83<br>A ioMe aad ee<br>a e e uu ee H  2.80  ee 3.00  ee 2.90  ee<br>ee J  0.013  ee 0.10  ee 0.05  ee<br>K  0.890  1.00  0.975<br>K1  0.903  1.10  1.025<br>| aA ee ee ee ee<br>Cc OB ee L  0.45  ee 0.61  ee 0.55  ee<br>L1  0.25  0.55  0.40<br>M  0.085 0.150  0.110<br> 8°<br>| L eeEeee<br>I P L |rrr All Dimensions in mm<br>:<br>ggested Pad Layout ested Pad Layout yout out<br>Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.<br>Y + Dimensions Value (in mm)<br>Z  2.9<br>Z X  0.8<br>T{_EH+ C<br>Y  0.9<br>C  2.0<br>E  1.35<br>X E<br>| EP<br>DMP3130L 5 of 6<br>Document number: DS31524 Rev. 6 - 2 www.diodes.com<br>All7°<br>H<br>GAUGEPLANE<br>0.25<br>J<br>K 1 K<br>a<br>A M<br>L L1<br>C B<br>D<br>F G<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout ested Pad Layout yout out** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

October 2013 © Diodes Incorporated 

**DMP3130L** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2013, Diodes Incorporated 

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DMP3130L Document number: DS31524 Rev. 6 - 2 

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> distributors in Europe and Asia. Unlike standard online stores, Novapart
> specialises in exactly the cases where availability is the real problem: stock
> shortages, allocation crises, end-of-life components, and cost-reduction
> alternatives. They guarantee delivery even during supply chain disruptions and
> typically respond to quote requests within one business day.
> [Request a quote](https://novapart.co/quote/) — it's free and there's no
> minimum order.