# Power MOSFET, P Channel, 30 V, 3.1 A, 0.065 ohm, TSOT-26, Surface Mount

![Product image](https://novapart.co/image/farnell:3943775/)

**URL**: https://novapart.co/products/DMP3105LVT-7/power-mosfet-p-channel-30-v-31-a-0065-ohm-tsot-26
**SKU**: DMP3105LVT-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0970
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.15W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TSOT-26 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 3.1A |
| Drain Source On State Resistance | 0.065ohm |
| Gate Source Threshold Voltage Max | 900mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943775/)

**DMP3105LVT 30V P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON) max**|**ID**<br>**TA = +25°C**|
|-30V|75m@ VGS= -10V|-3.9A|
||98m@ VGS= -4.5V|-3.3A|



## **Features and Benefits** 

- Low Input Capacitance 

- Low On-Resistance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Description and Applications** 

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

## **Mechanical Data** 

   - Case: TSOT26 

   - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

- DC-DC Converters 

- Power Management Functions 

- Backlighting 

- Motor Control 

- Terminal Connections: See Diagram 

- Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 @ 

- Weight: 0.013 grams (Approximate) 

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## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMP3105LVT-7|TSOT26|3,000/Tape &Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and 

Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

31P = Product Type Marking Code YM = Date Code Marking Y = Year (ex: F = 2018) M = Month (ex: 9 = September) 

Date Code Key 

|**Year**||**2017**|**2018**|||**2019**|**2019**|||**2020**||**2021**|**2021**|||**2022**|**2022**||**2023**|||**2024**|**2024**|||**2025**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**Code**||E|F|||G||||H||I|||||J||K|||L|L|||M|
||||||||||||||||||||||||||||
|**Month**||**Jan**|**Feb**|**Mar**||||**Apr**||**May**||**Jun**||**Jul**|||**Aug**||**Sep**||**Oct**|||**Nov**||**Dec**|
|**Code**||1|2||3|||4||5||6||7|||8||9||O|||N|N|D|



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DMP3105LVT Document number: DS35504  Rev. 3 - 2 

May 2018 © Diodes Incorporated 

**DMP3105LVT** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|||||||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|-30|V|
|Gate-Source Voltage|||VGSS|±12|V|
|Continuous Drain Current (Note 5) VGS= -10V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-3.1<br>-2.5|A|
|Continuous Drain Current (Note 5) VGS= -4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-2.7<br>-2.2|A|
|Continuous Drain Current (Note 6) VGS= -10V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-3.9<br>-3.1|A|
|Continuous Drain Current (Note 6) VGS= -4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-3.3<br>-2.7|A|
|Maximum Continuous BodyDiode Forward Current|||IS|-2.2|A|
|Pulsed Drain Current(10µs Pulse,DutyCycle = 1%)|||IDM|-20|A|



**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)|PD|1.15|W|
|Thermal Resistance,Junction to Ambient(Note 5)|RJA|108|°C/W|
|Total Power Dissipation(Note 6)|PD|1.75|W|
|Thermal Resistance,Junction to Ambient(Note 6)|RJA|72|°C/W|
|Thermal Resistance, Junction to Case(Note 6)|RJC|23.4|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~ee~~|**Symbol**<br>~~ee~~|**Min**<br>~~ee~~|**Typ**<br>~~ee~~|**Max**<br>~~ee~~|**Unit**<br>~~ee~~|**Test Condition**<br>~~ee~~|
|**OFF CHARACTERISTICS(Note 7)**<br>~~ee~~|||||||
|Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~<br>~~a~~|-30<br>~~ee~~<br>~~a~~|<br>~~ee~~|<br>~~ee~~|V<br>~~ee~~|VGS= 0V,ID= -250µA<br>~~ee~~|
|Zero Gate Voltage Drain Current<br>~~a~~|IDSS<br>~~a~~<br>~~a~~|<br>~~a~~<br>~~a~~|<br>~~a~~|-100<br>~~a~~|nA<br>~~a~~|VDS= -30V,VGS= 0V<br>~~a~~|
|Gate-Source Leakage<br>~~a~~|IGSS<br>~~a~~<br>~~a~~|<br>~~a~~<br>~~a~~|<br>~~a~~|±100<br>~~a~~|nA<br>~~a~~|VGS= ±12V,VDS= 0V<br>~~a~~|
|**ON CHARACTERISTICS(Note 7)**<br>~~a a~~|||||||
|Gate Threshold Voltage<br>~~po~~|VGS(TH)|-0.5|-0.9|-1.5|V|VDS= VGS,ID= -250µA|
|Static Drain-Source On-Resistance<br>~~po~~|RDS(ON)||65|75|m|VGS= -10V,ID= -4.2A|
||||75|98||VGS= -4.5V,ID= -4.0A|
||||98|150||VGS= -2.5V,ID= -3.0A|
|Forward Transfer Admittance<br>~~po~~||Yfs||<br>~~DO~~|5<br>~~DO~~|<br>~~(OS~~|S<br>~~(ON~~|VDS= -15V,ID= -4.0A|
|Diode Forward Voltage<br>~~po~~<br>~~GO~~|VSD<br>~~GO~~|<br>~~GO~~<br>~~DO~~|-0.7<br>~~GO~~<br>~~DO~~|-1.0<br>~~GO~~<br>~~(OS~~|V<br>~~GO~~<br>~~(ON~~|VGS= 0V,IS= -1A<br>~~GO~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~DO~~<br>~~(OS(ON~~<br>~~Re~~|||||||
|Input Capacitance<br>~~Reee~~|Ciss<br>~~ee~~|<br>~~ee~~|839<br>~~ee~~|<br>~~ee~~|pF<br>~~ee~~|VDS= -15V, VGS= 0V<br>f = 1.0MHz<br>~~ee~~|
|Output Capacitance<br>~~Reee~~|Coss<br>~~ee~~|<br>~~ee~~|47<br>~~ee~~|<br>~~ee~~|||
|Reverse Transfer Capacitance<br>~~ee~~|Crss<br>~~ee~~|<br>~~ee~~|43<br>~~ee~~|<br>~~ee~~|||
|Gate Resistance<br>~~ee~~<br>~~a—<——~~|RG<br>~~ee~~|<br>~~ee~~|12.3<br>~~ee~~|<br>~~ee~~<br>~~e~~|<br>~~ee~~<br>~~e~~|VDS= 0V,VGS= 0V,f = 1.0MHz<br>~~ee~~<br>~~ee~~|
|Total Gate Charge(VGS= -4.5V)<br>~~a—<——~~|Qg||9.0|<br>~~e~~|nC<br>~~e~~<br>~~ee~~|VDS= -15V, ID= -4.0A<br>~~ee~~<br>~~ee~~|
|Total Gate Charge (VGS= -10.0V)<br>~~a—<——~~|Qg||19.8|<br>~~e~~|||
|Gate-Source Charge<br>~~—<——~~|Qgs||1.6|<br>~~e~~|||
|Gate-Drain Charge<br>~~—<——~~<br>~~————~~|Qgd||1.1|<br>~~e~~<br>~~ee~~|||
|Turn-On DelayTime<br>~~—<——~~<br>~~Re~~<br>~~————~~|tD(ON)||9.7|<br>~~e~~<br>~~ee~~|ns<br>~~e~~<br>~~ee~~|VGS= -10V, VDD= -15V, RG= 6,<br>ID= -1A<br>~~ee~~<br>~~ee~~|
|Turn-On Rise Time<br>~~————~~|tR||17.7|<br>~~ee~~|||
|Turn-Off DelayTime<br>~~————~~|tD(OFF)||269|<br>~~ee~~|||
|Turn-Off Fall Time<br>~~————~~|tF||64|<br>~~ee~~|||



Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate. 

7. Short duration pulse test used to minimize self-heating effect. 

8. Guaranteed by design. Not subject to production testing. 

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**DMP3105LVT** 

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**----- Start of picture text -----**<br>
12 12<br>VDS= -5.0V TA = 85°C<br>10<br>8 8<br>Uf ee ey<br>6<br>a Lf<br>4 4<br>aa TL<br>TA = 25°C<br>2<br>ee NE<br>0 |  An 0 4A<br>0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3<br>-VDS, DRAIN -SOURCE VOLTAGE(V) -VGS, GATE SOURCE VOLTAGE(V)<br>Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics<br>0.2 0.2<br>)<br>( V     = -4.5VGS<br>VGS= -2.5V N [CE] A<br>0.16 T 0.16<br>T  = 150°CA<br>+} 1 I [S] S a<br>0.12 +++} [RE] N [-] O 0.12 a= T  = 85°CA T  = 125°CA<br>VGS= -4.5V<br>U [RCE]<br>0.08 PT [| fT O 0.08 a<br>[S]<br>I [N-]<br>0.04 SS VGS= -10V D [RA] 0.04 ———<br>, O [N)] T  = 25°CA T  = -55°CA<br>(<br>D [S]<br>R<br>0 SS 0 iePt<br>0 3 6 9 12 15 0 4 8 12 16<br>-IDI, DRAIN SOURCE CURRENT (A) D, DRAIN SOURCE CURRENT -ID, DRAIN CURRENT (A)<br>Fig. 3  TFig. 3 T ypical On-Resistance vs.  Fig. 4  Typical On-Resistance vs.<br>Drain Current and Gate Voltage  Drain Current and Temperature<br>1.7 0.2<br>VGS = -4. 5 V<br>ID = -10A<br>1.5<br>TTL. TTT kLy<br>0.16<br>1.3<br>EEEREDA 0.12 Gane<br>1.1<br>0.08<br>VGS = -4. 5V<br>0.9 aap Zan “CEPR ID = -10A<br>0.04<br>0.7 Panneeee a<br>0.5 PPLE 0 TLELLEL<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)<br>Fig. 5  On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A)<br>-I<br>D<br>DS(ON)<br>(Normalized)<br>, DRAIN-SOURCE ON-RESISTANCE<br>R<br>, DRAIN CURRENT (A)<br>D<br>-I<br>)<br>, DRAIN-SOURCE ON-RESISTANCE(<br>DS(ON)<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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DMP3105LVT 

May 2018 © Diodes Incorporated 

Document number: DS35504  Rev. 3 - 2 

**DMP3105LVT** 

**==> picture [494 x 667] intentionally omitted <==**

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1.4 20<br>) [V] ( 1.2<br>G [E]<br>16<br>T [A] O [L] 1 ) T   = 25A C<br>V<br>N [T(A]<br>D<br>12<br>H [OL] 0.8 I   = -1mAD<br>S C [URRE]<br>0.6 ID = -250µA<br>T [HRE] 8<br>U [RCE]<br>T [E] O<br>0.4 S<br>G [A]<br>S<br>, [h)] ( [t] S 0.2 I [,] 4<br>G<br>V<br>0 0 of<br>-50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1 1.2<br>T  , JUNCTION TEMPERATURE (J C) -V    , SOURCE-DRAIN VOLTAGE (V)SD<br>Fig. 7 Gate Threshold Variation vs. Junction Temperature Fig. 8 Diode Forward Voltage vs. Current<br>100000 _——SSSSSSSSSSSSS== 10000 EE f = 1MHz —————<br>ee eS<br>es a a<br>10000 F [)]<br>[nA)] T [(] T   = 150A C [p] (E Ciss<br>[N] RE CN 1000<br>RUC 1000 rr————_————| a. 5 =— I [TA] CAP aa———a  ( C<br>G [E] A<br>C<br>100 ee ——<br>, [LEAKA] SD [S] eerra  eeGO GC T   =A A 85C T [ION] CNU 100 SO—ee Coss |—a|<br>I 10 —$————— , [J] CT ESS<br>1 T   =A 25C 10 Crss<br>0 5 10 15 20 25 30 0 5 10 15 20 25 30<br>-V    , DRAIN-SOURCE VOLTAGE (V)DS -V    , DRAIN-SOURCE VOLTAGE (V)DS<br>Fig. 9 Typical Drain-Source Leakage Current vs. Voltage Fig. 10 Typical Junction Capacitance<br>10 100 a<br>RDS(ON) -I  (A)@D<br>Veebs- 1 5V,IpIn=  - 4A eiionat Limited coeeee2 -I  (A)@P   =100µsD             W Htii P   =10µsW<br>8 || -ID(A)@PW=1ms  Lee ee an<br>7 ) [A] 10 ay e eee e SeTANCteSONee eeee EET||SET<br>So<br>N [T(] oot NNT NEE<br>) 6 POS\NNUNN NET<br>( [V] liiil Neee ll<br>VG [S] C [URRE] 1 SS -I  (A)@DC D NNR ARTE<br>4 v4 I [N] re|va fyee | -I  (A)@P   =10sD             W RAK7RANONT|SOmani<br>a CANS SNEN oo<br>D [RA] LAT -I  (A)@P   =1sD             W ZT RWYRJ NSN BailOE<br>D<br>I [,] 0.1 il | -I  (A)@P   =100msD             W DNNN. iil<br>Et AN<br>2<br>aon T           = 150T   = 25J(MAX) A  C C Coona -I  (A)@P   =10msD             W .i sei BEE<br>Single Pulse<br>0.01<br>0<br>0 5 10 15 20 0.01 0.1 1 10 100<br>Q   (nC)g -V    , DRAIN-SOURCE VOLTAGE (V)DS<br>Fig. 11 Gate Charge Characteristics Fig. 12 SOA, Safe Operation Area<br>, SOURCE CURRENT (A)<br>S<br>, GATE THRESHOLD VOLTAGE (V)  -I<br>GS(TH)<br>-V<br>, LEAKAGE CURRENT (nA)<br>DSS<br>-I , JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>-V<br>, DRAIN CURRENT (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


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**DMP3105LVT** | 

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1<br>eTSe Ee<br>iminea ayg————cm ||<br>Fme@n-osPepet ft ma@o-or AT tT eg MLernTTT Tl<br>Pp eweto Ne TTT pm mrCCT<br>weons | TTT WS A a<br>0.1 7 INL<br>EbLiSS@ 00s FSee aem ie<br>peana a FLAe/aEE TE | HE<br>Na ee MN<br>0.01<br>eerPt eae ANILCAITLINLT UI<br>fr)a @eectD=0.01 ofAIATOAAC TP| ee| eeeeee<br>ema nrowst/7TTZ|TIT TACT T ACIT TACT eel<br>T<br>@ D=Single Pulse<br>0.001<br>0.00001 eeveer(t) 0.0001 [IIL 0.001 LILITT 0.01 LUT 0.1 ETE TT 1 I 10 maeserorwaul 100 1000 |<br>t1, PULSE DURATION TIMES (sec)t1, PULSE DURATION TIME (sec)<br>Fig. 13 Transient Thermal Resistance Fig. 13 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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**DMP3105LVT** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **TSOT26** 

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**----- Start of picture text -----**<br>
D<br>e1 0 1(4x)<br>E1/2<br>E/2<br>E1 E c<br>Gauge Plane<br>0<br>Seating Plane<br>L<br>L2<br>he<br>e b 0 1(4x)<br>A2<br>A1<br>A<br>Seating Plane<br>**----- End of picture text -----**<br>


|**TSOT26**|**TSOT26**|**TSOT26**|**TSOT26**|
|---|---|---|---|
|**Dim**|**Min**|**Max**|**Typ**|
|**A**||1.00|**yp**<br>|
|**A**<br>**A1**|<br>0.010|1.00<br>0.100||
|**A2**|0.840|0.900||
|**D**|2.800|3.000|2.900|
|**E**|2.800BSC|||
|**E1**<br>**b**|1.500<br>0.300|1.700<br>0.450|1.600<br>|
|**b**<br>**c**|0.300<br>0.120|0.450<br>0.200||
|**e**|0.950BSC|||
|**e1 **|1.900BSC|||
|**L**|0.30|0.50||
|**L2**|0.250BSC|||
|**θ**|0°|8°|4°|
|**θ1**|4°|12°||
|**All Dimensions in mm**||||



## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**TSOT26** 

~~‘O00~~ C Y1 Y X ~~O00~~ 

|**Dimensions Value**|**Dimensions Value(in mm)**|
|---|---|
|**C**|0.950|
|**X**|0.700|
|**Y**|1.000|
|**Y1**|3.199|



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DMP3105LVT Document number: DS35504  Rev. 3 - 2 

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**DMP3105LVT** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

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Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2018, Diodes Incorporated 

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7 of 7 **www.diodes.com** 

DMP3105LVT Document number: DS35504  Rev. 3 - 2 

May 2018 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMP3105LVT-7/power-mosfet-p-channel-30-v-31-a-0065-ohm-tsot-26)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmp3105lvt-7/mosfet-p-ch-30v-3-1a-tsot-26/dp/3943775)
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