# Power MOSFET, P Channel, 30 V, 4 A, 0.056 ohm, SOT-26, Surface Mount

![Product image](https://novapart.co/image/farnell:3943771/)

**URL**: https://novapart.co/products/DMP3098LDM-7/power-mosfet-p-channel-30-v-4-a-0056-ohm-sot-26
**SKU**: DMP3098LDM-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1810
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.25W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-26 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 4A |
| Drain Source On State Resistance | 0.056ohm |
| Gate Source Threshold Voltage Max | 2.1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943771/)

**DMP3098LDM** 

**P-CHANNEL ENHANCEMENT MODE MOSFET** 

| 

|**Features**<br>•<br>Low RDS(ON):<br>•<br>65mΩ@VGS= -10V<br>•<br>115mΩ@VGS= -4.5V<br>•<br>Low Input/Output Leakage<br>•<br>**Lead Free By Design/RoHS Compliant (Note 3)**<br>•<br>**Qualified to AEC-Q101 Standards for High Reliability**<br>•<br>**"Green" Device (Note 4)**<br>TOP VIEW<br>**Maximum Ratings** @TA= 25°C unless otherwise specified<br>~~w~~|**Features**<br>•<br>Low RDS(ON):<br>•<br>65mΩ@VGS= -10V<br>•<br>115mΩ@VGS= -4.5V<br>•<br>Low Input/Output Leakage<br>•<br>**Lead Free By Design/RoHS Compliant (Note 3)**<br>•<br>**Qualified to AEC-Q101 Standards for High Reliability**<br>•<br>**"Green" Device (Note 4)**<br>TOP VIEW<br>**Maximum Ratings** @TA= 25°C unless otherwise specified<br>~~w~~|**P-CHANNEL ENHANCEMENT MODE MOSFET**<br>**Mechanical Data**<br>•<br>Case: SOT-26<br>•<br>Case Material - Molded Plastic. UL Flammability Rating 94V-0<br>•<br>Moisture Sensitivity:  Level 1 per J-STD-020D<br>•<br>Terminals: Finish - Matte Tin Solderable per MIL-STD-202,<br>Method 208<br>•<br>Terminal Connections: See Diagram<br>•<br>Marking Information: See Page 4<br>•<br>Ordering Information: See page 4<br>•<br>Weight: 0.008 grams (approximate)<br>SOT-26<br>Internal Schematic<br>G<br>S<br>D<br>D<br>D<br>D<br>TOP VIEW<br>= 25°C unless otherwise specified|**P-CHANNEL ENHANCEMENT MODE MOSFET**<br>**Mechanical Data**<br>•<br>Case: SOT-26<br>•<br>Case Material - Molded Plastic. UL Flammability Rating 94V-0<br>•<br>Moisture Sensitivity:  Level 1 per J-STD-020D<br>•<br>Terminals: Finish - Matte Tin Solderable per MIL-STD-202,<br>Method 208<br>•<br>Terminal Connections: See Diagram<br>•<br>Marking Information: See Page 4<br>•<br>Ordering Information: See page 4<br>•<br>Weight: 0.008 grams (approximate)<br>SOT-26<br>Internal Schematic<br>G<br>S<br>D<br>D<br>D<br>D<br>TOP VIEW<br>= 25°C unless otherwise specified|**P-CHANNEL ENHANCEMENT MODE MOSFET**<br>**Mechanical Data**<br>•<br>Case: SOT-26<br>•<br>Case Material - Molded Plastic. UL Flammability Rating 94V-0<br>•<br>Moisture Sensitivity:  Level 1 per J-STD-020D<br>•<br>Terminals: Finish - Matte Tin Solderable per MIL-STD-202,<br>Method 208<br>•<br>Terminal Connections: See Diagram<br>•<br>Marking Information: See Page 4<br>•<br>Ordering Information: See page 4<br>•<br>Weight: 0.008 grams (approximate)<br>SOT-26<br>Internal Schematic<br>G<br>S<br>D<br>D<br>D<br>D<br>TOP VIEW<br>= 25°C unless otherwise specified|
|---|---|---|---|---|
||||||
|**Characteristic**|||**Symbol**<br>**Value**|**Unit**|
|Drain-Source Voltage|||VDSS<br>-30|V|
|Gate-Source Voltage|||VGSS<br>±20|V|
|Drain Current (Note 1) Continuous<br>TA= 25°C<br>TA= 70°C|||ID<br>-4.0<br>-3.0|A|
|Pulsed Drain Current(Note 2)|||IDM<br>-14|A|



- Case Material - Molded Plastic. UL Flammability Rating 94V-0 

- Terminals: Finish - Matte Tin Solderable per MIL-STD-202, Method 208 

## **Maximum Ratings** @TA = 25°C unless otherwise specified 

## **Thermal Characteristics** 

|**Characteristic**|**Symbol**|**Value**|**Unit**|
|---|---|---|---|
|Total Power Dissipation(Note 1)|PD|1.25|W|
|Thermal Resistance,Junction to Ambient(Note 1);Steady-State|RθJA|100|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



- Notes: 1. Device mounted on 1"x1", FR-4 PC board on 0.1in.[2] pads on 2 oz. Copper pads and test pulse width t ≤10s. 

   2. Repetitive Rating, pulse width limited by junction temperature. 

3. No purposefully added lead. 

4. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 

1 of 4 **www.diodes.com** 

DMP3098LDM Document number: DS31446 Rev. 3 - 2 

October 2008 © Diodes Incorporated 

**DMP3098LDM** 

**Electrical Characteristics** @TA = 25°C unless otherwise specified 

|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~Cn~~|**Symbol**<br>|**Min**<br>|**Typ**<br>|**Max**<br>|**Unit**<br>|**Test Condition**<br>|
|**STATIC PARAMETERS**<br>~~Cnee~~|||||||
|Drain-Source Breakdown Voltage<br>~~ee~~<br>~~———~~<br>~~a~~|BVDSS<br>~~ee~~<br>~~a~~|-30<br>~~ee~~|⎯<br>~~ee~~|⎯<br>~~ee~~|V<br>~~ee~~|ID= -250μA,VGS= 0V<br>~~ee~~|
|Zero Gate Voltage Drain Current                       TJ= 25°C<br>~~———~~<br>~~a~~|IDSS<br>~~a~~|⎯|⎯|-1|μA|VDS= -30V,VGS= 0V|
|Gate-BodyLeakage Current<br>~~———~~<br>~~a~~<br>~~a~~|IGSS<br>~~a~~<br>~~I~~|⎯<br>~~I~~|⎯<br>~~ER~~|±100<br>~~(OO~~|nA<br>~~(OO (~~|VDS= 0V,VGS=±20V<br>~~(~~|
|Gate Threshold Voltage<br>~~———~~<br>~~a ~~<br>~~nD~~<br>~~a~~|VGS(th)<br> ~~a~~<br>~~nD~~<br>~~I~~|-1.0<br>~~nD~~<br>~~I~~|⎯<br>~~nD~~<br>~~ER~~|-2.1<br>~~nD~~<br>~~(OO~~|V<br>~~nD~~<br>~~(OO (~~|VDS= VGS,ID= -250μA<br>~~nD~~<br>~~(~~|
|On State Drain Current(Note 5)<br>~~a~~|ID (ON)<br>~~I ~~<br>~~sD~~|-15<br> ~~I ~~<br>~~sD ~~|⎯<br> ~~ER~~<br> ~~I~~|⎯<br>~~(OO~~<br>~~(QO~~|A<br>~~(OO (~~<br>~~(QO~~|VGS= -4.5V,VDS= -5V<br>~~(~~<br>~~(QO~~|
|Static Drain-Source On-Resistance (Note 5)<br>~~[LLL~~<br>~~———~~<br>~~a~~|RDS (ON)<br>~~[LLL~~<br>~~a~~|⎯<br>~~[LLL~~<br>~~a~~|56<br>98<br>~~[LLL~~|65<br>115<br>~~[LLL~~<br>~~a~~|mΩ<br>~~[LLL~~<br>~~a~~|VGS= -10V, ID= -4.0A<br>VGS= -4.5V,ID= -3.0A<br>~~[LLL~~|
|Forward Transconductance(Note 5)<br>~~———~~<br>~~a~~|gFS<br>~~a~~|⎯<br>~~a~~|5.3|⎯<br>~~a~~|S<br>~~a~~|VDS= -10V,ID= -4.0A|
|Diode Forward Voltage(Note 5)<br>~~———~~<br>~~a~~<br>~~————~~|VSD<br>~~a~~<br>~~reer~~|⎯<br>~~a~~<br>~~reer~~|0.79<br>~~reer~~|-1.2<br>~~a~~<br>~~reer~~|V<br>~~a~~<br>~~reer~~|IS= -1.7A,VGS= 0V<br>~~reer~~|
|**DYNAMIC PARAMETERS(Note 6)**<br>~~———~~<br>~~a a a~~<br>~~a~~<br>~~————~~<br>~~reer~~|||||||
|Input Capacitance<br>~~————~~|Ciss<br>~~reer~~|⎯<br>~~reer~~|336<br>~~reer~~|⎯<br>~~reer~~|pF<br>~~reer~~|VDS= -25V, VGS= 0V<br>f = 1.0MHz<br>~~reer~~<br>~~—————————————~~|
|Output Capacitance<br>~~————~~|Coss<br>~~reer~~|⎯<br>~~reer~~|70<br>~~reer~~|⎯<br>~~reer~~|pF<br>~~reer~~||
|Reverse Transfer Capacitance<br>~~————~~<br>~~—————————————~~|Crss<br>~~reer~~<br>~~—————————————~~|⎯<br>~~reer~~<br>~~—————————————~~|49<br>~~reer~~<br>~~—————————————~~|⎯<br>~~reer~~<br>~~—————————————~~|pF<br>~~reer~~<br>~~—————————————~~||
|Gate Resistance<br>~~————~~<br>~~—————————————~~<br>~~ee~~|RG<br>~~reer~~<br>~~—————————————~~<br>~~ee~~|⎯<br>~~reer~~<br>~~—————————————~~<br>~~ee~~|4.6<br>~~reer~~<br>~~—————————————~~<br>~~ee~~|⎯<br>~~reer~~<br>~~—————————————~~|Ω<br>~~reer~~<br>~~—————————————~~|VDS= 0V,VGS= 0V,f = 1.0MHz<br>~~reer~~<br>~~—————————————~~|
|**SWITCHING CHARACTERISTICS**<br>~~eeee~~|||||||
|Total Gate Charge<br>~~ee~~<br>~~———~~|Qg<br>~~ee~~<br>~~a~~|⎯<br>~~ee~~<br>~~a~~|4.0<br>7.8<br>~~ee~~<br>~~a~~|⎯<br>~~a~~|nC<br>~~ee~~|VDS= -15V, VGS= -4.5V, ID= -5.0A<br>VDS= -15V,VGS= -10V,ID= -5.0A|
|Gate-Source Charge<br>~~ee~~<br>~~———~~|Qgs<br>~~ee~~<br>~~a~~|⎯<br>~~ee~~<br>~~a~~|1.0<br>~~ee~~<br>~~a~~|⎯<br>~~a~~||VDS= -15V,VGS= -4.5V,ID= -5.0A|
|Gate-Drain Charge<br>~~ee~~<br>~~———~~<br>~~a—————~~|Qgd<br>~~ee~~<br>~~a~~|⎯<br>~~ee~~<br>~~a~~|2.5<br>~~ee~~<br>~~a~~|⎯<br>~~a~~<br>~~ee~~||VDS= -15V,VGS= -4.5V,ID= -5.0A<br>~~ee~~|
|Turn-On DelayTime<br>~~ee ~~<br>~~———~~<br>~~a—————~~|td(on)<br> ~~ee~~<br>~~a~~|⎯<br>~~ee~~<br>~~a~~|6.0<br>~~ee~~<br>~~a~~|⎯<br>~~a~~<br>~~ee~~|ns<br>~~ee~~|VDS= -15V, VGS= -10V,<br>ID= -1.0A, RG= 6.0Ω<br>~~ee~~|
|Rise Time<br>~~a—————~~|tr|⎯|5.0|⎯<br>~~ee~~|||
|Turn-Off DelayTime<br>~~—————~~|td(off)|⎯|17.6|⎯<br>~~ee~~|||
|Fall Time<br>~~—————~~|tf|⎯|9.5|⎯<br>~~ee~~|||



**==> picture [464 x 213] intentionally omitted <==**

**----- Start of picture text -----**<br>
20 20<br>Pi | IATL EL | V DS  = -5V | LW<br>16 VGS = -10V 16 TAT = 125°CA = 150°C<br>Sar arcane a /4 T A  = 25°C<br>12 |7)| | | {| V GS  = -4.5V [4 12 jkeee// TA = -55°C<br>of<br>8 8<br>4 pAee V GS  = -3.0V 4 EAer Ae<br>VGS = -1.5V VGS = -2.5V<br>0 boo 0 a<br>0 1 2 3 4 5 1 2 3 4 5 6<br>-VDS, DRAIN-SOURCE VOLTAGE (V) -VGS, GATE SOURCE VOLTAGE (V)<br>Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics<br>, DRAIN CURRENT (A)<br>D , DRAIN CURRENT (A)<br>-I D<br>-I<br>**----- End of picture text -----**<br>


2 of 4 **www.diodes.com** 

DMP3098LDM Document number: DS31446 Rev. 3 - 2 

October 2008 © Diodes Incorporated 

**DMP3098LDM** oT 

**==> picture [483 x 667] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 0.14<br>TA = 150 ° C<br>ee— a 0.12 a{fTyt<br>TA = 125 ° C<br>A ee ee<br>a —— aa.<br>0.10 T A  = 85°C<br>naan VGS = -4.5V =n<br>0.08 T A  = 25°C<br>BERDEZanEe ee<br>0.1 ee ee eee<br>ee 0.06 CO<br>TA = -55°C<br>— ee<br>V GS = -10V 0.04<br>pttSTR eneeee<br>|e tifetttfttft ty| tT 0.02 aes<br>0.01 0 a<br>0 LTE 4 T 8 TT 12 ETT 16 20 0 a 2 4 6 8 10<br>-ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A)<br>Fig. 3 Typical On-Resistance  Fig. 4 Typical On-Resistance<br>vs. Drain Current and Gate Voltage vs. Drain Current and Temperature<br>1.61.4 Ty V GS  = -10V 1,000<br>ID = -5.3A C iss<br>1.2 SeRREp V I GSD  = -4.2A  = -4.5V Cee ee<br>< NS<br>100<br>Coss<br>1.0 Bane ————<br>C rss<br>a Zo ——a a<br>0.8 Za —_<br>0.6 PT 10 Coe<br>-50 -25 0 25 50 75 100 125 150 0 5 10 15 20 25 30<br>TA, AMBIENT TEMPERATURE (°C) -VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 5 On-Resistance Variation with Temperature Fig. 6 Typical Capacitance<br>2.4 10 eeeee eee<br>8 ee<br>2.0 ID = -250µA ee<br>1.6 6 ateeee T A  = 25°C po<br>ee ee<br>ee<br>4<br>eee<br>1.2<br>2<br>ee<br>a a<br>0.8 0<br>-50 -25 0 25 50 75 100 125 150 0.4 | tT 0.6 0.8 1 1.2<br>TA, AMBIENT TEMPERATURE (°C) -VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current<br>)Ω )Ω<br>, STATIC DRAIN-SOURCE  , STATIC DRAIN-SOURCE<br>ON-RESISTANCE ( ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>, STATIC DRAIN-SOURCE<br>C, CAPACITANCE (pF)<br>DS(ON)<br>R ON-RESISTANCE (NORMALIZED)<br>, SOURCE CURRENT (A)<br>S<br>, GATE THRESHOLD VOLTAGE (V) -I<br>GS(TH)<br>-V<br>**----- End of picture text -----**<br>


3 of 4 **www.diodes.com** 

DMP3098LDM Document number: DS31446 Rev. 3 - 2 

October 2008 © Diodes Incorporated 

**DMP3098LDM** 

**Ordering Information** (Note 7) **Part Number Case Packaging** DMP3098LDM-7 SOT-26 3000/Tape & Reel Notes: 7.  For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. **Marking Information** DMB = Product Type Marking Code **DMB** YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) Date Code Key **Year 2008 2009 2010 2011 2012 2013 2014 2015 Code** V W X Y Z A B C **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec** ~~ee~~ **Code** 1 2 3 4 5 6 7 8 9 O N D | ~~ee~~ 

## **Package Outline Dimensions** 

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**----- Start of picture text -----**<br>
A<br>SOT-26<br>Dim Min  Max Typ<br>B C A  0.35  0.50 0.38<br>B  1.50 1.70 1.60<br>C  2.70  3.00 2.80<br>ee === D  ⎯  ⎯  0.95<br>H - === H  2.90 3.10 3.00<br>J  0.013 0.10 0.05<br>K M K  1.00  1.30 1.10<br>L  0.35 0.55 0.40<br>M  0.10  0.20 0.15<br>J D L α 0°  8°  ⎯<br>All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

**==> picture [307 x 107] intentionally omitted <==**

**----- Start of picture text -----**<br>
E E<br>oh<br>Dimensions Value (in mm)<br>Z  3.20<br>G  1.60<br>e G e C X  0.55<br>Z<br>Y  0.80<br>C  2.40<br>Y E  0.95<br>Cooot<br>a X<br>**----- End of picture text -----**<br>


## IMPORTANT NOTICE 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. 

## LIFE SUPPORT 

Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. 

4 of 4 **www.diodes.com** 

DMP3098LDM Document number: DS31446 Rev. 3 - 2 

October 2008 © Diodes Incorporated 



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- [Supplier page](https://es.farnell.com/diodes-inc/dmp3098ldm-7/mosfet-p-ch-30v-4a-sot-26/dp/3943771)
---

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