# Power MOSFET, P Channel, 30 V, 7.1 A, 0.045 ohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:3943767RL/)

**URL**: https://novapart.co/products/DMP3056LSS-13/power-mosfet-p-channel-30-v-71-a-0045-ohm-soic
**SKU**: DMP3056LSS-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1460
**Stock**: 500+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 7.1A |
| Drain Source On State Resistance | 0.045ohm |
| Gate Source Threshold Voltage Max | 1.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943767RL/)

**DMP3056LSS** &. >} **SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR** 

## **Features** 

## **Mechanical Data** 

- Low On-Resistance 

- 45mΩ @ VGS = -10V 

- 65mΩ @ VGS = -4.5V 

- Low Gate Threshold Voltage 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

   - Case: SO-8 

   - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminal Connections: See Diagram 

   - Terminals: Finish – Matte Tin Annealed over Copper Leadframe, Solderable per MIL-STD-202, Method 208 © **e3** 

   - Weight: 0.074 grams (Approximate) 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

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SO-8  D<br>S ma TT D<br>“= S  rT TT D<br>G<br>S rT TT D<br>G ma TT D  S<br>Equivalent Circuit<br>Top View  Top View<br>Pin-Out<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMP3056LSS-13|SO-8|2500/Tape &Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.. 

   4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

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8 5<br>slelele<br>Jit Jit       = Manufacturer’s Marking<br>P3056LS = Product Type Marking Code<br>P3056LS YYWW = Date Code Marking<br>YY or YY = Year (ex: 17 = 2017)<br>YY WW WW = Week (01 to 53)<br>FP] 1 ELI LI 4<br>**----- End of picture text -----**<br>


1 of 6 **www.diodes.com** 

DMP3056LSS Document number: DS31419 Rev. 8 - 2 

February 2017 © Diodes Incorporated 

**DMP3056LSS** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|||||||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|-30|V|
|Gate-Source Voltage|||VGSS|20|V|
|Drain Current (Note 5)|Drain Current (Note 5)<br>Steady<br>State|Steady<br>TA= +25°C<br>TA= +70°C|ID|-7.1<br>-6.0|A|
|Pulsed Drain Current(Pulse Width10S, DutyCycle1%)|||IDM|-20|A|



## **Thermal Characteristics** 

|**Characteristic**|**Symbol**|**Value**|**Unit**|
|---|---|---|---|
|Total Power Dissipation(Note 5)|PD|2.5|W|
|Thermal Resistance, Junction to Ambient(Note 5)|RθJA|50|°C/W|
|Operating and Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~rs~~<br>~~ee~~|**Symbol**<br>~~rs~~<br>~~rs~~<br>~~ee~~|**Min**<br>~~rs~~<br>~~rs~~<br>~~ee~~|**Typ**<br>~~rs~~<br>~~ee~~|**Max**<br>~~rs~~<br>~~ee~~|**Unit**<br>~~rs~~<br>~~ee~~|**Test Condition**<br>~~rs~~|
|**OFF CHARACTERISTICS(Note 6)**<br>~~rs~~<br>~~rs~~<br>~~ee~~|||||||
|Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~|-30<br>~~ee~~|<br>~~ee~~|<br>~~ee~~|V<br>~~ee~~|VGS= 0V, ID= -250µA|
|Zero Gate Voltage Drain Current<br>~~ee~~<br>~~Toot~~|IDSS<br>~~ee~~<br>~~Toot~~|<br>~~ee~~<br>~~Toot~~|<br>~~ee~~<br>~~Toot~~|-1<br>~~ee~~<br>~~Toot~~|µA<br>~~ee~~<br>~~Toot~~|VDS= -30V, VGS= 0V<br>~~Toot~~|
|Gate-Source Leakage<br>~~ee~~<br>~~Toot~~|IGSS<br>~~ee~~<br>~~Toot~~|<br>~~ee~~<br>~~Toot~~|<br>~~ee~~<br>~~Toot~~|100<br>800<br>~~ee~~<br>~~Toot~~|nA<br>~~ee~~<br>~~Toot~~|VGS=20V, VDS= 0V<br>VGS=25V, VDS= 0V<br>~~Toot~~|
|**ON CHARACTERISTICS(Note 6)**<br>~~IDR~~<br>~~I~~|||||||
|Gate Threshold Voltage<br>~~I~~|VGS(TH)<br>~~I~~<br>~~I~~|-1<br>~~I~~<br>~~DR~~|-1.7<br>~~I~~<br>~~I~~|-2.1<br>~~I~~|V<br>~~I~~|VDS= VGS, ID= -250µA<br>~~I~~|
|Static Drain-Source On-Resistance<br>~~ees~~|RDS(ON)<br>~~I ~~<br>~~ees~~|<br><br> ~~DR~~<br>~~ees~~|<br><br>~~I~~<br>~~ees~~|45<br>65<br>~~ees~~|m<br>~~ees~~|VGS= -10V, ID= -6.0A<br>VGS= -4.5V, ID= -5.0A<br>~~ees~~|
|Forward Transconductance<br>~~es~~|gfs<br>~~es~~|<br>~~es~~|8<br>~~es~~|<br>~~es~~|S<br>~~es~~|VDS= -10V, ID= -5.3A<br>~~es~~|
|Diode Forward Voltage (Note 6)<br>~~es~~|VSD<br>~~es~~|-0.5<br>~~es~~|<br>~~es~~|-1.2<br>~~es~~|V<br>~~es~~|VGS= 0V, IS= -1.7A<br>~~es~~|
|**DYNAMIC CHARACTERISTICS**<br>~~|~~<br>~~I~~<br>~~UU~~<br>~~I~~<br>~~I~~|||||||
|Input Capacitance<br>~~I~~<br>~~ne~~|Ciss<br>~~I~~<br>~~I~~<br>~~ne~~|<br>~~I~~<br>~~UU~~<br>~~ne~~|722<br>~~I~~<br>~~I~~<br>~~ne~~|<br>~~I~~<br>~~I~~<br>~~ne~~|pF<br>~~I~~<br>~~ne~~|VDS= -25V, VGS= 0V<br>f = 1.0MHz<br>~~I~~<br>~~ne~~|
|Output Capacitance<br>~~ne~~|Coss<br>~~I~~<br>~~ne~~|<br>~~UU~~<br>~~ne~~|114<br>~~I~~<br>~~ne~~|<br>~~I~~<br>~~ne~~|pF<br>~~ne~~||
|Reverse Transfer Capacitance<br>~~ne~~|Crss<br>~~ne~~<br>~~ee~~|<br>~~ne~~<br>~~ee~~|92<br>~~ne~~<br>~~ee~~|<br>~~ne~~|pF<br>~~ne~~||
|Gate Resistance<br>~~rs~~|RG<br>~~rs~~<br>~~ee~~|<br>~~rs~~<br>~~ee~~|3.3<br>~~rs~~<br>~~ee~~|<br>~~rs~~|<br>~~rs~~|VDS= 0V, VGS= 0V<br>f = 1.0MHz<br>~~rs~~|
|**SWITCHING CHARACTERISTICS(Note 7)**<br>~~ee ee~~<br>~~ee~~<br>~~ee~~<br>~~eee~~|||||||
|Total Gate Charge<br>~~ee~~<br>~~re~~|QG<br>~~ee~~<br>~~ee~~|<br>~~ee~~<br>~~ee~~|6.8<br>~~ee~~|<br>~~ee~~<br>~~ee~~|nC<br>~~ee~~<br>~~ee~~|VDS= -15V, VGS= -4.5V,<br>ID= -6A<br>~~ee~~<br>~~eee~~|
||QG<br>~~ee~~<br>~~ee~~<br>~~re~~|<br>~~ee~~<br>~~ee~~<br>~~re~~|13.7<br>~~ee~~<br>~~re~~|<br>~~ee~~<br>~~ee~~<br>~~re~~|nC<br>~~ee~~<br>~~ee~~<br>~~re~~<br>~~ee~~|VDS= -15V, VGS= -10V,<br>ID= -6A<br>~~ee~~<br>~~eee~~<br>~~re~~<br>~~ee~~|
|Gate-Source Charge<br>~~re~~|QGS<br>~~ee~~<br>~~re~~|<br>~~ee~~<br>~~re~~|1.6<br>~~re~~|<br>~~ee~~<br>~~re~~|||
|Gate-Drain Charge<br>~~re~~<br>~~————~~|QGD<br>~~re~~|<br>~~re~~|4.18<br>~~re~~|<br>~~re~~<br>~~ee~~|||
|Turn-On DelayTime<br>~~re~~<br>~~Re————~~|tD(ON)<br>~~re~~|<br>~~re~~|6.4<br>~~re~~|<br>~~re~~<br>~~ee~~|ns<br>~~re~~<br>~~ee~~|VDS= -15V, VGS= -10V,<br>ID= -1A, RG= 6.0<br>~~re~~<br>~~ee~~|
|Rise Time<br>~~Re————~~|tR||5.3|<br>~~ee~~|||
|Turn-Off DelayTime<br>~~Re————~~|tD(OFF)||26.5|<br>~~ee~~|||
|Fall Time<br>~~————~~|tF||14.7|<br>~~ee~~|||



7. Guaranteed by design. Not subject to product testing 

2 of 6 **www.diodes.com** 

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**DMP3056LSS** 

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12 10<br>11 | i/fF | | | | fT tt 9<br>10 rr V GS  = -10V 8 p V     = -5VDS ><br>9 V GS  = -4.5V ) Pulsed<br>8 Spr| |EEE| | | | N [T(A] 7 o fff<br>7 APE PP 6 eee)<br>6 Pe | | | | | | tf C [URRE] 5 eeae<br>5 I [N]<br>4<br>4 ft tt ttt V yt GS = -3.0V D [RA] f T   = 150°CA f<br>fo , D 3 = T   = 125°CA fff<br>32 ff V GS  = -1.5V - [I] 2 T   = 85°CA T   = 25°CA<br>1 VGS = -1.0V VGS = -2.5V 1 T   = -55°CA<br>WEEE EEE > An e<br>0 [rT 0 aZ a<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 1 1.5 2 2.5 3 3.5 4<br>-VDS, DRAIN-SOURCE VOLTAGE (V) -V     , GATE SOURCE VOLTAGE (V)GS<br>Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics<br>0.1 E= Eee =e 0.05<br>0.04<br>Sei se Ee VGS = -4.5V eeeee<br>0.03 I D  = -5.0A<br>COUCH eT<br>VGS = -4.5V 0.02<br>VGS = -10V<br>ID = -6.0A<br>VGS = -10V<br>comm | 0.01 ec<br>0.01 B10 0 ne<br>0.1 1 10 -50 -25 0 25 50 75 100 125 150<br>-ID, DRAIN-SOURCE CURRENT (A) TA, AMBIENT TEMPERATURE  ( o 癈 C))<br>Fig. 3 On-Resistance vs. Drain Current & Gate Voltage<br>Fig. 4 Static Drain-Source On-Resistance<br>vs. Ambient Temperature<br>3 10,000<br>) 2.8<br>[V] ( f = 1MHz<br>E<br>G 2.6 I   = -250µAD<br>T [A]<br>LO 2.4 OCC<br>V 1,000<br>D<br>L 2.2 Ciss<br>H [O]<br>S 2 S o ——<br>— <==<br>T [HRE] 1.8 Coss<br>100<br>T [E] AG 1.6 SERBS) LS Crss<br>, 1.4<br>T [H] Pt | | | | rN ————<br>- [V]<br>1.2 Pt | ttt tT Ss ee<br>1 10<br>-50 Pt -25 | 0 25 | 50 tt 75 100 125 150 0 | | 5 10 | 15 | 20 | ft 25 30<br>T  , AMBIENT TEMPERATURE (°C)A -VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 5 Gate Threshold Variation vs. Ambient Temperature Fig. 6  Typical Total Capacitance<br>, DRAIN CURRENT (A)<br>D<br>-I<br>)<br>, STATIC DRAIN-SOURCE<br>ON-RESISTANCE (<br>R<br>DS(ON)<br>)<br>, STATIC DRAIN-SOURCE<br>ON-RESISTANCE (<br>DS(ON)<br>R<br>C, CAPACITANCE (pF)<br>, DRAIN CURRENT (A)<br>D<br>-I<br>, GATE THRESHOLD VOLTAGE (V)<br>TH<br>-V<br>**----- End of picture text -----**<br>


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February 2017 © Diodes Incorporated 

**DMP3056LSS** 

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**----- Start of picture text -----**<br>
10<br>_—— ee<br>1<br>) SSS<br>T [(A]<br>N<br>E<br>RR 0.1 ER ff<br>U — | fff f if<br>CE T   = 150°CA<br>C<br>R 0.01 T   = 125°CA<br>O [U] S — T   = 85°CA fff ff<br>——_—-<br>S<br>- [I,] sf of<br>0.001 T   = 25°CA T   = -55°CA<br>EE EE |<br>Eff ff fF<br>——f } fF +<br>0.0001 ee ee<br>0 0.2 0.4 0.6 0.8 1 1.2<br>-V    , SOURCE-DRAIN VOLTAGE (V)SD<br>Fig. 7 Reverse Drain Current vs. Source-Drain Voltage<br>, SOURCE CURRENT (A)<br>S<br>-I<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
100<br>7 RDS(ON) LIMITED PW=1ms  =:<br>PW=100µs<br>10 ge O N<br>RRR KS<br>OSS NTN<br>1 PW=10ms<br>PW=100ms<br>AR — SSKENSNN SHEEE<br>0.1 TTJ(MAX)C=25 ℃ =150 ℃ — PW=1s  “Ss™™NTTTBee<br>Single Pulse<br>DUT on  r_| PW=10s  PN<br>1*MRP board Cot DC CC<br>VGS= -10V<br>0.01 eell<br>0.1 1 10 100<br>-VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 8 SOA, Safe Operation Area<br>, DRAIN CURRENT (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


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700<br>Single Pulse<br>600 RθJA=111 ℃ /W<br>RθJA (t)=RθJA * r(t)<br>500 SIT ETM EM TIL TT TJ-TA=P * RθJA  (t) |<br>400 EN\ LLIN ELM TTI TT |<br>300 CER\  ETI ETM ETN CTETUTTLE<br>200 SLIT\ STITE- TIT EET TTT TTT<br>CEMENT<br>100 TMT TTT TTT<br>0 HIM AIPAwal TUNE ETI<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Fig. 9 Single Pulse Maximum Power Dissipation<br>1<br>SSRIS<br>D=0.5 PN eer SasgothPS———— D=0.9  et1<br>D=0.3 D=0.7<br>0.1 FTT c H LUA200 L TTT a |<br>RO D=0.1 a LLU WE ETC<br>e t EE<br>TT LTT ag<br>D=0.05<br>i Ane ieee RE LL<br>D=0.02<br>e e |<br>0.01 A EESa EEa<br>D=0.01<br>ar D=0.005  A RθJA(t) = r(t) * RθJA TTT<br>FAIPe 00 CIE RθJA= 96 ℃ /W TTill<br>Duty Cycle, D = t1 / t2<br>D=Single Pulse<br>0.001<br>1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Fig. 10 Transient Thermal Resistance<br>, PEAK TRANSIENT POWER (W)<br>(PK)<br>P<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


4 of 6 **www.diodes.com** 

DMP3056LSS Document number: DS31419 Rev. 8 - 2 

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**DMP3056LSS** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **SO-8** 

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**----- Start of picture text -----**<br>
SO-8<br>Dim  Min  Max  Typ<br>E ——— A  1.40 1.50 1.45<br>A1  0.10 0.20 0.15<br>1 b  0.30 0.50 0.40<br>c  0.15  0.25  0.20<br>D  4.85  4.95  4.90<br>E  5.90  6.10  6.00<br>E1  3.80  3.90  3.85<br>b<br>E1 E0  3.85  3.95  3.90<br>h e  --  --  1.27<br>Q h  -  --  0.35<br>7° L   0.62  0.82  0.72<br>c<br>Q 0.60 0.70 0.65<br>A 4°± 3° All Dimensions in mm<br>G auge Plane<br>S eating Plane<br>L<br>e A1 E0<br>D<br>9° (All sides)<br>R 0.1<br>45°<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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**----- Start of picture text -----**<br>
SO-8<br>X1<br>Dimensions Value (in mm)<br>C 1.27<br>Y1 X  0.802<br>X1  4.612<br>Y  1.505<br>OE Y1  6.50<br>Y<br>OOM C X<br>**----- End of picture text -----**<br>


5 of 6 **www.diodes.com** 

DMP3056LSS Document number: DS31419 Rev. 8 - 2 

February 2017 © Diodes Incorporated 

**DMP3056LSS** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2017, Diodes Incorporated 

**www.diodes.com** 

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DMP3056LSS Document number: DS31419 Rev. 8 - 2 

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## Links

- [View this product on Novapart](https://novapart.co/products/DMP3056LSS-13/power-mosfet-p-channel-30-v-71-a-0045-ohm-soic)
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- [Supplier page](https://es.farnell.com/diodes-inc/dmp3056lss-13/mosfet-p-ch-30v-7-1a-soic/dp/3943767RL)
---

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