# Power MOSFET, Enhancement Mode, P Channel, 30 V, 5 A, 0.045 ohm, SOT-26, Surface Mount

![Product image](https://novapart.co/image/farnell:2061420/)

**URL**: https://novapart.co/products/DMP3056LDM/power-mosfet-enhancement-mode-p-channel-30-v-5-a
**SKU**: DMP3056LDM
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1920
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-5A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.045ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1V

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.25mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-26 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 5A |
| Drain Source On State Resistance | 0.045ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2061420/)

**DMP3056LDM P-CHANNEL ENHANCEMENT MODE MOSFET** sd 

## **Product Summary** 

|~~ee~~|~~ee~~|~~ee~~|
|---|---|---|
|~~ee~~|||
|**V(BR)DSS**|**RDS(on) max**|**ID**<br>TA= 25°C|
|-30V|45mΩ @VGS= -10V|-4.3A|
||65mΩ @VGS= -4.5V|-3.3A|



## **Features** 

- Low Gate Threshold Voltage 

- Low On-Resistance 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Description** 

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

## **Mechanical Data** 

- Case: SOT26 

- Case Material – Molded Plastic, “Green” Molding Compound. UL Flammability Rating 94V-0 

- Moisture Sensitivity:  Level 1 per J-STD-020 

## **Applications** 

- General Purpose Interfacing Switch 

- Power Management Functions 

   - Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 

   - Terminal Connections: See Diagram 

   - Weight: 0.008 grams (approximate) 

- Analog Switch 

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SOT26<br>Top View<br>**----- End of picture text -----**<br>


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Top View<br>Internal Schematic<br>D D S<br>D D G<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|(Note 4)|||
|---|---|---|---|
|**Part Number**|**Qualification **|**Case**|**Packaging**|
|DMP3056LDM-7|Commercial|SOT26|3000/Tape &Reel|
|DMP3056LDMQ-7|Automotive|SOT26|3000/Tape & Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com. 

## **Marking Information** 

||||||**DMA**<br>**YM**|**DMA**<br>**YM**|**DMA**<br>**YM**|**DMA**<br>**YM**|||DMA = Product Type Marking Code<br>YM = Date Code Marking<br>Y = Year (ex: V = 2008)<br>M = Month (ex: 9 = September)|||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||Date CodeKey|||||||||||||||
|**Year**<br>**2008**<br>**2009**<br>**2010**<br>**2011**<br>**2012**<br>**2013**<br>**2014**<br>**2015**<br>**Code**<br>V<br>W<br>X<br>Y<br>Z<br>A<br>B<br>C<br>**Month**<br>**Jan**<br>**Feb**<br>**Mar**<br>**Apr**<br>**May**<br>**Jun**<br>**Jul**<br>**Aug**<br>**Sep**<br>**Oct**<br>**Nov**<br>**Dec**<br>**Code**<br>1<br>2<br>3<br>4<br>5<br>6<br>7<br>8<br>9<br>O<br>N<br>D<br>~~———————————~~<br>~~_———~~||||||||||||||||



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DMP3056LDM Document number: DS31449 Rev. 11 - 2 

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**DMP3056LDM** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol **|**Value**|**Units**|
|Drain-Source Voltage|||VDSS|-30|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (Note 6) VGS= 10V|SteadyState|TA= +25°C|ID|-4.3|A|
||t < 10s|TA= +25°C|ID|-5.8|A|
|Maximum Continuous BodyDiode Forward Current(Note 6)|||IS|-2.3|A|
|Pulsed Drain Current(10μspulse,dutycycle = 1%)|||IDM|-13|A|



## **Thermal Characteristics** 

|**Characteristic**|**Characteristic**|**Symbol **|**Value**|**Units**|
|---|---|---|---|---|
|Total Power Dissipation(Note 5)|TA= +25°C|PD|1.25|W|
|Thermal Resistance,Junction to Ambient(Note 5)|Steady State|RθJA|100|°C/W|
|Total Power Dissipation(Note 6)|TA= +25°C|PD|1.5|W|
|Thermal Resistance,Junction to Ambient(Note 6)|Steady State|RθJA|86|°C/W|
|Thermal Resistance,Junction to Case||RθJC|15.6||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to 150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

||||||||
|---|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**STATIC PARAMETERS (Note 7)**|||||||
|Drain-Source Breakdown Voltage|BVDSS|-30|⎯|⎯|V|VGS= 0V,ID= -250μA|
|Zero Gate Voltage Drain Current                       TJ= +25°C<br>~~a~~|IDSS<br>~~a~~|⎯<br>~~a~~|⎯<br>~~a~~|-1<br>~~a~~|μA<br>~~a~~|VGS= 0V,VDS= -30V<br>~~a~~|
|Gate-Body Leakage Current<br>~~a~~|IGSS<br>~~a~~|⎯<br>~~a~~|⎯<br>~~a~~|±100<br>±800<br>~~a~~|nA<br>~~a~~|VGS=±20V, VDS= 0V<br>VGS=±25V,VDS= 0V<br>~~a~~|
|Gate Threshold Voltage<br>~~a~~|VGS(th)<br>~~a~~|-1.0<br>~~a~~|⎯<br>~~a~~|-2.1<br>~~a~~|V<br>~~a~~|VGS= VDS,ID= -250μA<br>~~a~~|
|Static Drain-Source On-Resistance<br>~~pT~~|RDS (ON)<br>~~pT~~|⎯<br>~~pT~~|⎯<br>⎯<br>~~pT~~|45<br>65<br>~~pT~~|mΩ<br>~~pT~~|VGS= -10V, ID= -5A<br>VGS= -4.5V,ID= -4.2A<br>~~pT~~|
|Forward Transconductance<br>~~pT~~|gFS<br>~~pT~~|⎯<br>~~pT~~|8<br>~~pT~~|⎯<br>~~pT~~|S<br>~~pT~~|VDS= -10V,ID= -4.3A<br>~~pT~~|
|Diode Forward Voltage|VSD|⎯|⎯|-1.2|V|VGS= 0V,IS= -1.7A|
|**DYNAMIC PARAMETERS (Note 8)**<br>~~—_——————es or~~|||||||
|Input Capacitance<br>~~—_——————~~|Ciss<br>~~es~~|⎯<br>~~es~~|948<br>~~es~~|⎯<br>~~es or~~|pF<br>~~or~~|VGS= 0V, VDS= -25V,<br>f = 1.0MHz|
|Output Capacitance<br>~~—_——————~~|Coss<br>~~es~~|⎯<br>~~es~~|105<br>~~es~~|⎯<br>~~es or~~|pF<br>~~or~~||
|Reverse Transfer Capacitance<br>~~—_——————~~|Crss<br>~~es~~|⎯<br>~~es~~|100<br>~~es~~|⎯<br>~~es or~~|pF<br>~~or~~||
|**SWITCHING CHARACTERISTICS (Note 8)**<br>~~—_—————— es or~~<br>~~eeeeee~~<br>~~—————~~|||||||
|Total Gate Charge<br>~~ee~~<br>~~—————~~|QG<br>~~ee~~<br>~~eee~~<br>|⎯<br>~~ee~~<br>~~eee~~<br>|10.1<br>~~ee~~<br>~~eee~~<br>|⎯<br>~~ee~~<br><br>|nC<br>~~ee~~<br>~~eee~~<br>|VDS= -15V, VGS= -4.5V,<br>ID= -6A<br>~~ee~~<br>~~eee~~|
||QG<br>~~ee~~<br>~~eee~~<br>~~ee~~|⎯<br>~~ee~~<br>~~eee~~<br>~~ee~~|21.1<br>~~ee~~<br>~~eee~~<br>~~ee~~|⎯<br>~~ee~~<br><br>~~ee~~|nC<br>~~ee~~<br>~~eee~~<br>~~ee~~|VDS= -15V, VGS= -10V,<br>ID= -6A<br>~~ee~~<br>~~eee~~|
|Gate-Source Charge<br>~~—————~~|QGS<br>~~eee~~<br>~~ee~~|⎯<br>~~eee~~<br>~~ee~~|2.8<br>~~eee~~<br>~~ee~~|⎯<br><br>~~ee~~|||
|Gate-Drain Charge<br>~~—————~~|QGD<br>~~eee~~<br>~~ee~~|⎯<br>~~eee~~<br>~~ee~~|3.2<br>~~eee~~<br>~~ee~~|⎯<br><br>~~ee~~|||
|Gate Resistance<br>~~————— ~~|Rg<br>~~eee~~<br> ~~ee~~|⎯<br>~~eee~~<br>~~ee~~|13.15<br>~~eee~~<br>~~ee~~<br>~~a~~|⎯<br><br>~~ee~~<br>~~a~~|Ω<br>~~eee~~<br>~~ee~~<br>~~a~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~eee~~<br>~~ee~~|
|Turn-On DelayTime<br>~~————— ~~<br>~~—————~~|td(on)<br>~~eee~~<br> <br>~~—————~~|⎯<br>~~eee~~<br><br>~~—————~~|10.2<br>~~eee ~~<br><br>~~—————~~<br>~~a~~|⎯<br> <br><br>~~—————~~<br>~~a~~|ns<br> ~~eee~~<br><br>~~—————~~<br>~~a~~|VDS= -15V, VGS= -10V,<br>ID= -1A, RG= 6.0Ω<br>~~eee~~<br>~~—————~~<br>~~ee~~|
|Rise Time<br>~~—————~~|tr<br>~~—————~~|⎯<br>~~—————~~|6.6<br>~~—————~~<br>~~a~~|⎯<br>~~—————~~<br>~~a~~|||
|Turn-Off DelayTime<br>~~—————~~|td(off)<br>~~—————~~|⎯<br>~~—————~~|50.1<br>~~—————~~<br>~~a~~|⎯<br>~~—————~~<br>~~a~~|||
|Fall Time<br>~~—————~~|tf<br>~~—————~~|⎯<br>~~—————~~|22.3<br>~~—————~~<br>~~a~~|⎯<br>~~—————~~<br>~~a~~|||



6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad 

7. Short duration pulse test used to minimize self-heating effect. 

8. Guaranteed by design. Not subject to product testing. 

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**DMP3056LDM** 

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12 10<br>11<br>9<br>10 a V GS  = -10V 8 ++ VDS = 5V<br>9 SH V GS  = -4.5V Pulsed | ff —<br>SEE fe<br>7<br>8 s/c j<br>7 || tT tT | | tt 6 ee)<br>6 || | tt tt 5 ff<br>5 AEE rr 4 ae Ae<br>TA = 150°C<br>4 fp V GS  = -3.0V 3 — T A  = 125°C i<br>32 TEER V GS = -1.5V 2 TA = 85°C TA = 25°C |<br>1 OEE VGS = -1.0V VGS = -2.5V 1 ff TA = -55°C<br>0 -——T TT 0 >Za /soo<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 1 1.5 2 2.5 3 3.5 4<br>-VDS, DRAIN-SOURCE VOLTAGE (V) -VGS, GATE SOURCE VOLTAGE (V)<br>Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics<br>0.1 =e 0.05<br>0.04<br>Se<br>VGS = -4.5V<br>0.03 ID = -3.7A<br>SH cuareete<br>VGS = -4.5V 0.02<br>VGS = -10V<br>ID = -4.3A<br>VGS = -10V<br>Com 0.01 eect<br>0.01 BT 0<br>0.1 1 10 -50 -25 0 25 50 75 100 125 150<br>-ID, DRAIN-SOURCE CURRENT (A) TA, AMBIENT TEMPERATURE (°C)<br>Fig. 3 On-Resistance vs. Drain Current & Gate Voltage<br>Fig. 4 Static Drain-Source On-Resistance<br>vs. Ambient Temperature<br>3 10,000<br>2.8<br>f = 1MHz<br>2.6 ID = -250µA<br>2.4 A<br>1,000<br>2.2 C iss<br>2 Sh ===<br>_— Nae<br>1.8 Coss<br>100<br>1.6 FEPSSEET 0 SSE Crss<br>1.4<br>tt | | PN —<br>1.2<br>Pt tT EE tT TUS FF<br>1 10<br>-50 ttt -25 0 25 50 tt 75 100 tT ft 125 150 0 | | 5 10 ft 15 | tf 20 25 30<br>TA, AMBIENT TEMPERATURE (°C) -VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 5 Gate Threshold Variation vs. Ambient Temperature Fig. 6  Typical Total Capacitance<br>, DRAIN CURRENT (A)-ID , DRAIN CURRENT (A)-ID<br>)Ω )Ω<br>, STATIC DRAIN-SOURCE<br>ON-RESISTANCE (<br>, STATIC DRAIN-SOURCE<br>ON-RESISTANCE (<br>DS(ON)<br>DS(ON) R<br>R<br>C, CAPACITANCE (pF)<br>, GATE THRESHOLD VOLTAGE (V)<br>TH<br>-V<br>**----- End of picture text -----**<br>


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DMP3056LDM Document number: DS31449 Rev. 11 - 2 

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**DMP3056LDM** 

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10<br>1<br>0.1 ffff ff<br>TA = 150 ° C<br>0.01 T A = 125°C<br>TA = 85°C<br>es Ay en, Sy A es |<br>0.001 T A  = 25°C TA = -55°C<br>0.0001 —Tt...<br>0 0.2 0.4 0.6 0.8 1 1.2<br>-VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 7 Reverse Drain Current vs. Source-Drain Voltage<br>100<br>RDS(on) Limited<br>TJ(MAX) = 150°C<br>T A  = 25°C<br>Single Pulse<br>10 pEeeg ya peae eT |<br>PW = 10µs<br>DC<br>1 P W  = 10s<br>PW = 1s<br>PW = 100ms<br>P W  = 10ms<br>0.1 PW = 1ms<br>PW = 100µs<br>0.01<br>0.1 1 10 100<br>-VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 9 Safe Operation Area<br>1.4<br>1.2<br>1.0<br>0.8 Note 5<br>0.6<br>0.4<br>0.2<br>0<br>0 25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE (°C)<br>Fig. 11 Power Dissipation vs. Ambient Temperature<br>, SOURCE CURRENT (A)<br>S<br>-I<br>, DRAIN CURRENT (A)<br>D<br>-I<br>, POWER DISSIPATION (mW)<br>D<br>P<br>**----- End of picture text -----**<br>


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1.7<br>1.5<br>1.3<br>1.1<br>VGS = -10V<br>ID = -10A<br>0.9<br>VGS = -4.5V<br>0.7 I D  = -5A<br>0.5<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (°C)<br>Fig. 8 On-Resistance Variation with Temperature<br>10<br>8<br>6 VDSID = 6A = -15V<br>4<br>2<br>0<br>0 5 10 15 20 25<br>Qg, TOTAL GATE CHARGE (nC)<br>Fig. 10 Gate-Charge Characteristics<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (NORMALIZED)<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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**DMP3056LDM** 

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1<br>D = 0.7<br>D = 0.5<br>D = 0.3<br>0.1<br>D = 0.1<br>D = 0.9<br>D = 0.05 R θJA (t) = r(t) * R θJA<br>RθJA = 96°C/W<br>D = 0.02<br>P(pk)<br>0.01 t1<br>D = 0.01<br>t2<br>D = 0.005 T J  - T A  = P * R θJA (t)<br>Duty Cycle, D = t 1 /t 2<br>D = Single Pulse<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (s)<br>Fig. 12 Transient Thermal Response<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 

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A<br>SOT26<br>Dim Min  Max Typ<br>B C A  0.35 0.50 0.38<br>B  1.50 1.70 1.60<br>C 2.70 3.00 2.80<br>cea ==<br>a ==== D  ⎯  ⎯  0.95<br>H H  2.90 3.10 3.00<br>J 0.013 0.10 0.05<br>K M K  1.00 1.30 1.10<br>L  0.35 0.55 0.40<br>M  0.10 0.20 0.15<br>J<br>D L α 0°  8°  ⎯<br>All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

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C2 C2<br>Kae<br>Dimensions Value (in mm)<br>Z  3.20<br>G  1.60<br>e G ee C1 X  0.55<br>Z Y  0.80<br>C1  2.40<br>C2  0.95<br>Y<br>Poot<br>X<br>**----- End of picture text -----**<br>


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DMP3056LDM Document number: DS31449 Rev. 11 - 2 

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**DMP3056LDM** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A.   Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2012, Diodes Incorporated **www.diodes.com** 

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DMP3056LDM Document number: DS31449 Rev. 11 - 2 

December 2012 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMP3056LDM/power-mosfet-enhancement-mode-p-channel-30-v-5-a)
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- [Supplier page](https://es.farnell.com/diodes-inc/dmp3056ldm/mosfet-p-ch-w-dio-30v-5a-sot26/dp/2061420)
---

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