# Power MOSFET, P Channel, 30 V, 4.3 A, 0.045 ohm, SOT-26, Surface Mount

![Product image](https://novapart.co/image/farnell:3127363RL/)

**URL**: https://novapart.co/products/DMP3056LDM-7/power-mosfet-p-channel-30-v-43-a-0045-ohm-sot-26
**SKU**: DMP3056LDM-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1550
**Stock**: 500+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-4.3A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.045ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.1

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.25W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | P Channel |
| Power Dissipation Pd | 1.25W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.045ohm |
| Transistor Case Style | SOT-26 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 4.3A |
| Drain Source On State Resistance | 0.045ohm |
| Automotive Qualification Standard | - |
| Gate Source Threshold Voltage Max | 2.1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3127363RL/)

**DMP3056LDM** C7 **P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|~~—_—~~|~~—_—~~|~~—_—~~|
|---|---|---|
|~~—_—~~|||
|**BVDSS**|**RDS(ON) MAX**|**ID**<br>TA= +25°C|
|-30V|45m @VGS= -10V|-4.3A|
||65m @VGS= -4.5V|-3.3A|



## **Features** 

- Low Gate Threshold Voltage 

- Low On-Resistance 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Description** 

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

## **Applications** 

- General Purpose Interfacing Switch 

- Power Management Functions 

- Analog Switch 

- **PPAP Capable (Note 4)** 

## **Mechanical Data** 

- Case: SOT26 

- Case Material – Molded Plastic, “Green” Molding Compound. UL Flammability Rating 94V-0 

- Moisture Sensitivity:  Level 1 per J-STD-020 

- Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

- Terminal Connections: See Diagram 

- Weight: 0.016 grams (Approximate) 

SOT26 Top View 

**==> picture [75 x 116] intentionally omitted <==**

**----- Start of picture text -----**<br>
Top View<br>Internal Schematic<br>D D S<br>D D G<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 5) 

|**Ordering Informationg Information Information** (Note 5)|**Ordering Informationg Information Information** (Note 5)|**Ordering Informationg Information Information** (Note 5)|**Ordering Informationg Information Information** (Note 5)|
|---|---|---|---|
|||||
|**Part Number**|**Qualification**|**Case**|**Packaging**|
|DMP3056LDM-7|Commercial|SOT26|3000/Tape & Reel|
|DMP3056LDMQ-7|Automotive|SOT26|3000/Tape & Reel|



Notes: 

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/product_compliance_definitions.html. 

- 5 . For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

||||||||||||||||||DMA = Product Type Marking Code|DMA = Product Type Marking Code|DMA = Product Type Marking Code|DMA = Product Type Marking Code|DMA = Product Type Marking Code|||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||||**DMA**|||||**YM**|||||YM = Date Code Marking<br>Y = Year (ex: V = 2008)<br>M = Month (ex: 9 = September)|||||||||
|Date CodeKey||||||||||||||||||||||||||
|**Year**|**2008**|||**~**|||||||**2016**||||||**2017**<br>**2018**||||**2019**|**2020**|||**2021**|
|**Code**|V|||~||||||||D|||||E<br>F||||G|H|||I|
|||||||||||||||||||||||||||
|**Month**|**Jan**|**Feb**|||**Mar**|||||**Apr**|||||**May**||**Jun**<br>**Jul**||**Aug**||**Sep**|**Oct**|**Nov**||**Dec**|
|**Code**|1|2||||3|||||4|4|||5||6<br>7||8||9|O|N||D|



1 of 6 **www.diodes.com** 

DMP3056LDM Document number: DS31449 Rev. 12 - 2 

November 2016 © Diodes Incorporated 

**DMP3056LDM** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|||||||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|-30|V|
|Gate-Source Voltage|||VGSS|20|V|
|Continuous Drain Current (Note 7) VGS=-10V|SteadyState|TA= +25C|ID|-4.3|A|
||t < 10s|TA= +25C|ID|-5.8|A|
|Maximum Continuous BodyDiode Forward Current(Note 7)|||IS|-2.3|A|
|Pulsed Drain Current(10s Pulse,DutyCycle = 1%)|||IDM|-13|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 6)|TA= +25°C|PD|1.25|W|
|Thermal Resistance,Junction to Ambient(Note 6)|SteadyState|RJA|100|°C/W|
|Total Power Dissipation(Note7)|TA= +25°C|PD|1.5|W|
|Thermal Resistance,Junction to Ambient(Note 7)|SteadyState|RJA|86|°C/W|
|Thermal Resistance,Junction to Case||RJC|15.6||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**STATIC PARAMETERS(Note 8)**<br>~~ee~~|||||||
|Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~|-30<br>~~ee~~|<br>~~ee~~|<br>~~ee~~|V<br>~~ee~~|VGS= 0V,ID= -250A<br>~~ee~~|
|Zero Gate Voltage Drain Current                       TJ= +25C<br>~~ee~~|C<br>IDSS<br>~~ee~~|<br>~~ee~~|<br>~~ee~~|-1<br>~~ee~~|A<br>~~ee~~|VGS= 0V,VDS= -30V<br>~~ee~~|
|Gate-Body Leakage Current<br>~~pt~~|IGSS<br>~~pt~~|<br>~~pt~~|<br>~~pt~~|100<br>800<br>~~pt~~|nA<br>~~pt~~|VGS=20V, VDS= 0V<br>VGS=25V,VDS= 0V<br>~~pt~~|
|Gate Threshold Voltage<br>~~pt~~<br>~~pa~~|VGS(TH)<br>~~pt~~|-1.0<br>~~pt~~|<br>~~pt~~|-2.1<br>~~pt~~|V<br>~~pt~~|VGS= VDS,ID= -250A<br>~~pt~~|
|Static Drain-Source On-Resistance<br>~~pa~~|RDS(ON)||<br>|45<br>65|m|VGS= -10V, ID= -5A<br>VGS= -4.5V,ID= -4.2A|
|Forward Transconductance<br>~~pa~~|gFS||8||s|VDS= -10V,ID= -4.3A|
|Diode Forward Voltage<br>~~pa~~|VSD|||-1.2|V|VGS= 0V,IS= -1.7A|
|**DYNAMIC PARAMETERS(Note 9)**<br>~~——————~~<br>~~ne~~|||||||
|Input Capacitance<br>~~——————~~|Ciss||948<br>~~ne~~|<br>~~ne~~|pF<br>~~ne~~|VGS= 0V, VDS= -25V,<br>f = 1.0MHz<br>~~ne~~|
|Output Capacitance<br>~~——————~~|Coss||105<br>~~ne~~|<br>~~ne~~|pF<br>~~ne~~||
|Reverse Transfer Capacitance<br>~~——————~~|Crss||100<br>~~ne~~|<br>~~ne~~|pF<br>~~ne~~||
|**SWITCHING CHARACTERISTICS(Note 9)**<br>~~——————~~<br>~~ne~~<br>~~eeeeee~~|||||||
|Total Gate Charge<br>~~eee~~<br>~~es~~|Qg<br>~~eee~~<br>~~es~~|<br>~~eee~~<br>~~es~~|10.1<br>~~eee~~<br>~~ees~~|<br>~~e~~<br>~~ees A~~|nC<br>~~e~~<br>~~A~~|VDS= -15V, VGS= -4.5V,<br>ID= -6A<br>~~eee~~|
||Qg<br>~~eee~~<br>~~es~~<br>~~es~~|<br>~~eee~~<br>~~es~~<br>~~es~~|21.1<br>~~eee~~<br>~~es~~<br>~~ees~~|<br>~~e~~<br>~~es~~<br>~~ees A~~|nC<br>~~e~~<br>~~es~~<br>~~A~~|VDS= -15V, VGS= -10V,<br>ID= -6A<br>~~eee~~<br>~~es~~|
|Gate-Source Charge<br>~~eee~~<br>~~es~~|Qgs<br>~~eee~~<br>~~es~~<br>~~es~~|<br>~~eee~~<br>~~es~~<br>~~es~~|2.8<br>~~eee ~~<br>~~es~~<br>~~ees~~|<br> ~~e~~<br>~~es~~<br>~~ees A~~|||
|Gate-Drain Charge<br>~~es~~|Qgd<br>~~es~~<br>~~es~~|<br>~~es~~<br>~~es~~|3.2<br>~~es~~<br>~~ees~~|<br>~~es~~<br>~~ees A~~|||
|Gate Resistance|Rg<br>~~es~~|<br>~~es ~~|13.15<br> ~~ees~~<br>~~i~~|<br>~~ees A~~<br>~~i~~|Ω<br>~~A~~<br>~~i~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~ee~~|
|Turn-On DelayTime<br>~~—————~~|tD(ON)<br>~~—————~~|<br>~~—————~~|10.2<br>~~—————~~<br>~~i~~|<br>~~—————~~<br>~~i~~|ns<br>~~—————~~<br>~~i~~|VDS= -15V, VGS= -10V,<br>ID= -1A, Rg= 6.0<br>~~—————~~<br>~~ee~~|
|Rise Time<br>~~—————~~|tR<br>~~—————~~|<br>~~—————~~|6.6<br>~~—————~~<br>~~i~~|<br>~~—————~~<br>~~i~~|||
|Turn-Off DelayTime<br>~~—————~~|tD(OFF)<br>~~—————~~|<br>~~—————~~|50.1<br>~~—————~~<br>~~i~~|<br>~~—————~~<br>~~i~~|||
|Fall Time<br>~~—————~~|tF<br>~~—————~~|<br>~~—————~~|22.3<br>~~—————~~<br>~~i~~|<br>~~—————~~<br>~~i~~|||



8. Short duration pulse test used to minimize self-heating effect. 

9. Guaranteed by design. Not subject to product testing. 

2 of 6 **www.diodes.com** 

DMP3056LDM Document number: DS31449 Rev. 12 - 2 

November 2016 © Diodes Incorporated 

**DMP3056LDM** 

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**----- Start of picture text -----**<br>
12 10<br>11 PvP | | tt | 9 |<br>10 oT V GS  = -10V 8 a V     = 5VDS<br>9 SE V GS  = -4.5V E ) Pulsed a<br>7<br>8 —_|/ EE N [T(A] o f<br>7 6<br>Peet | | tt tt ff<br>6 Pf | |tT tT| tt| | |Tttt C [URRE] 5 ee)eee eeae<br>5 I [N]<br>4<br>4 ‘fet{ ft ft tt V ft GS = -3.0V D [RA] , D 3 fff T   = 125°CA T   = 150°CA f<br>32 foo V GS  = -1.5V - [I] 2 f T   = 85°CA h T   = 25°CA<br>VGS = -1.0V VGS = -2.5V T   = -55°CA<br>1 Poor 1 ff<br>0 Zo 0 ZA<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 1 1.5 2 2.5 3 3.5 4<br>-VDS, DRAIN-SOURCE VOLTAGE (V) -V     , GATE SOURCE VOLTAGE (V)GS<br>Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics<br>0.1 ae 0.05<br>0.04<br>Set rt EE VGS = -4.5V  eeeee<br>0.03 I D  = -3.7A<br>ST etree<br>VGS = -4.5V 0.02<br>VGS = -10V<br>ID = -4.3A<br>VGS = -10V<br>conn | 0.01  EER<br>0.01 0<br>0.1 1 10 -50 -25 0 25 50 75 100 125 150<br>CAM -ID, DRAIN-SOURCE CURRENT (A) =  RE TA, AMBIENT TEMPERATURE ( S (°C)  癈 )<br>Fig. 3 On-Resistance vs. Drain Current & Gate Voltage<br>Fig. 4 Static Drain-Source On-Resistance<br>vs. Ambient Temperature<br>3 10,000<br>2.8<br>f = 1MHz<br>2.6 ID =  -250 礎 A<br>2.4 ===<br>1,000<br>2.2 Ciss<br>2 oo ea<br>— WO<br>1.8 Coss<br>100<br>1.6 SFR CSS Crss<br>1.4<br>Pt | | | | rN —<br>1.2<br>ptt | | | | UN fe<br>1 10<br>-50 PE -25 0 tet 25 50 tT 75 tt 100 125 150 0 | ft 5 10 | ft 15 ft 20 25 30<br>TA, AMBIENT TEMPERATURE ((°C)  癈 ) -VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 5 Gate Threshold Variation vs. Ambient Temperature Fig. 6  Typical Total Capacitance<br>)<br>, STATIC DRAIN-SOURCE<br>ON-RESISTANCE (<br>DS(ON)<br>R<br>)<br>, STATIC DRAIN-SOURCE<br>ON-RESISTANCE (<br>DS(ON)<br>R<br>C, CAPACITANCE (pF)<br>, DRAIN CURRENT (A)<br>D<br>-I<br>, DRAIN CURRENT (A)<br>D<br>-I<br>, GATE THRESHOLD VOLTAGE (V)<br>-V<br>TH<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
10<br>es ee V4) A) Ay A<br>1<br>) ee //4 a<br>T [(A]<br>N — Aff fF<br>E<br>RR 0.1<br>U<br>C T   = 150°CA<br>E Hp<br>C Af f (fF [fe [| }<br>R 0.01 T   = 125°CA<br>S [OU] T   = 85°CA<br>S es A ny A An |<br>- [I,]<br>0.001 T   = 25°CA T   = -55°CA<br>a A A<br>0.0001 |itfff y fF | fi fo |<br>0 0.2 0.4 0.6 0.8 1 1.2<br>-V    , SOURCE-DRAIN VOLTAGE (V)SD<br>Fig. 7 Reverse Drain Current vs. Source-Drain Voltage<br>100<br>R           LimitedDS(ON)<br>T           = 150°CJ(MAX)<br>PTT TT T   = 25°CSingle PulseA<br>[A)] 10<br>T [(] P    = 10µsW<br>[N] E<br>RR oe DC SAWSONK NNSRROH<br>UC 1 P    = 10sW<br>P    = 1sW<br>[IN] RA EK P    = 100msW ESQ NS<br>D P    = 10msW<br>, D | AROS AHH<br>- [I] 0.1 P    = 1msW<br>P    = 100µsW<br>es N<br>PTET<br>0.01 on oo<br>0.1 1 10 100<br>-V     , DRAIN-SOURCE VOLTAGE (V)DS<br>Fig. 9 Safe Operation Area<br>1.4<br>1.2 —/ | | | |<br>1.0<br>0.8 Note 6 Note 5<br>0.6 + NE<br>0.4 | |EXE<br>0.2 {| |tIN|\<br>0<br>0 25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE ((°C)  癈 )<br>Fig. 11 Power Dissipation vs. Ambient Temperature<br>D<br>, POWER DISSIPATION (mW)<br>P<br>, SOURCE CURRENT (A)<br>S<br>-I<br>, DRAIN CURRENT (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


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1.7<br>1.5<br>A<br>1.3 BREA<br>1.1<br>Baas<br>VGS = -10V 7<br>ID = -10A<br>0.9<br>VGS = -4.5V<br>0.7 I D  = -5A<br>0.5 eueaaee<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ((°C)  癈 )<br>Fig. 8 On-Resistance Variation with Temperature<br>10<br>8<br>6 VDSID = 6A = -15V<br>4<br>2<br>0<br>0 5 10 15 20 25<br>Qg, TOTAL GATE CHARGE (nC)<br>Fig. 10 Gate-Charge Characteristics<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>V<br>-<br>DS(ON)<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br>


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November 2016 © Diodes Incorporated 

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**----- Start of picture text -----**<br>
1<br>SS D = 0.7 meaga<br>D = 0.5 ee TTT ot<br>bo [CIC] ee<br>ee D = 0.3 ArREL RE<br>0.1 AL a a2c\ ZA<br>D = 0.1<br>ey aa D = 0.9 a<br>bE D = 0.05 et AT a R JA (t) = r(t) * R JA | TTT<br>CTEEere7 ACT Tn AT R JA  = 96 96°C/W  癈 /W PTmii<br>D = 0.02<br>P(pk)<br>0.01 PI D = 0.01 ALAAIML LE I TME E ELINE |EH t1 all<br>Te D = 0.005 ee ee ee T J  - T A  = P * Rt2 JA (t) | [{TTT]<br>be eT Duty Cycle, D = t 1 /t 2 | TTT<br>HT TYE PT<br>D = Single Pulse<br>0.001<br>0.00001 Coin 0.0001 CON 0.001 CIC 0.01 COCA 0.1 CO 1 10 100 1,000<br>t1, PULSE DURATION TIME (s)<br>Fig. 12 Transient Thermal Response<br>ge Outline Dimensions e Outline Dimensions<br>Please see http://www.diodes.com/package-outlines.html for the latest version.<br>SOT26<br>D<br>SOT26<br>4 7 Dim  Min  Max  Typ<br>— a ee<br>a A1  0.013 0.10 0.05<br>E1 E a A2  1. ee 00 1.30 1.10<br>A3  0.70 0.80 0.75<br>b  0.35 0.50 0.38<br>| — a ee<br>ee c 0 ee .10 0 ee .20 0.15<br>= a D  2.90 3.10 3.00<br>b e  -  -  0.95<br>a ) Le a ee<br>a1 a e1  -  -  1.90<br>e1 E  2.70 3.00 2.80<br>E1  1.50 1.70 1.60<br>L  0.35 0.55 0.40<br>_<br>i A2 ' ee a ee -  ee -  8°<br>A3 A1 | a1  -  -  7°<br>| Seating Plane 7 \ a a All Dimensions in mm  ee<br>L<br>tL e ' c os —<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


## **Package Outline Dimensions e Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT26** 

**==> picture [124 x 118] intentionally omitted <==**

**----- Start of picture text -----**<br>
ooo C1<br>Y1 G C<br>Y<br>X<br>**----- End of picture text -----**<br>


|**Dimensions Value**|**Dimensions Value(in mm)**|
|---|---|
|**C**|2.40|
|**C1**|0.95|
|**G**|1.60|
|**X**|0.55|
|**Y**|0.80|
|**Y1**|3.20|



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DMP3056LDM Document number: DS31449 Rev. 12 - 2 

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**DMP3056LDM** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2016, Diodes Incorporated 

**www.diodes.com** 

6 of 6 **www.diodes.com** 

DMP3056LDM Document number: DS31449 Rev. 12 - 2 

November 2016 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMP3056LDM-7/power-mosfet-p-channel-30-v-43-a-0045-ohm-sot-26)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmp3056ldm-7/mosfet-p-ch-30v-4-3a-sot26/dp/3127363RL)
---

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