# Power MOSFET, P Channel, 30 V, 4.8 A, 0.036 ohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:3943765/)

**URL**: https://novapart.co/products/DMP3050LSS-13/power-mosfet-p-channel-30-v-48-a-0036-ohm-soic
**SKU**: DMP3050LSS-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1370
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.7W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 4.8A |
| Drain Source On State Resistance | 0.036ohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943765/)

**DMP3050LSS** 

**P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**V(BR)DSS**|**RDS(ON) max**|**ID max**<br>**TA = 25°C**|
|-30V|45mΩ @ VGS= -10V|-4.8A|
||80mΩ @ VGS= -4.5V|-3.5A|



## **Features** 

- Low On-Resistance 

- Low Input Capacitance 

- Fast Switching Speed 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 standards for High Reliability** 

## **Description** 

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

## **Applications** 

- Backlighting 

- Power Management Functions 

- DC-DC Converters 

## **Mechanical Data** 

- Case: SO-8 

- Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal Connections Indicator: See diagram 

- Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 ICKY 

- Weight: 0.008 grams (approximate) 

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Drain<br>SO-8<br>S D<br>S D<br>Gate<br>S 6] D<br>& ra]<br>G D<br>Source<br>Top View  Top View Equivalent Circuit<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMP3050LSS-13|SO-8|2500/Tape & Reel|



Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at http://www.diodes.com. 

## **Marking Information** 

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Top View<br>8 5<br>PELLET |<br>Logo<br>P3050LS Part no.<br>YY WW<br>Xth week: 01 ~ 53<br>Year: “11” = 2011<br>1 4<br>PF} ET Ed<br>**----- End of picture text -----**<br>


1 of 6 **www.diodes.com** 

DMP3050LSS Document number: DS35647 Rev. 4 - 2 

September 2012 © Diodes Incorporated 

**DMP3050LSS** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Units**|
|Drain-Source Voltage|||VDSS|-30|V|
|Gate-Source Voltage(Note 4)|||VGSS|±25|V|
|Continuous Drain Current (Note 5) VGS= -10V|Steady<br>State|TA= 25°C<br>TA= 70°C|ID|-4.8<br>-3.8|A|
||t<10s|TA= 25°C<br>TA= 70°C|ID|-6.3<br>-4.9|A|
|Maximum Continuous BodyDiode Forward Current(Note 6)|||IS|-3.0|A|
|Pulsed Drain Current(10μspulse,dutycycle = 1%)|||IDM|-30|A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol **|**Value**|**Units**|
|Total Power Dissipation (Note 5)|TA= 25°C|PD|1.7|W|
||TA= 70°C||1.1||
|Thermal Resistance, Junction to Ambient (Note 5)|SteadyState|RθJA|73|°C/W|
||t<10s||37||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to 150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

||||||||
|---|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 6) **|||||||
|Drain-Source Breakdown Voltage|BVDSS|-30|-|-|V|VGS= 0V,ID= -250μA|
|Zero Gate Voltage Drain Current|IDSS|-|-|-1|μA|VDS= -30V,VGS= 0V|
|Gate-Source Leakage|IGSS|-|-|±100|nA|VGS= ±25V,VDS= 0V|
|**ON CHARACTERISTICS (Note 6) **|||||||
|Gate Threshold Voltage<br>~~ee~~|VGS(th)<br>~~ee~~|-1.0<br>~~ee~~|-<br>~~ee~~|-2.0<br>~~ee~~|V<br>~~ee~~|VDS= VGS,ID= -250μA<br>~~ee~~|
|Static Drain-Source On-Resistance<br>~~ee~~|RDS (ON)<br>~~ee~~|-<br>~~ee~~|36<br>~~ee~~|45<br>~~ee~~|mΩ<br>~~ee~~|VGS= -10V,ID= -6A<br>~~ee~~|
|||-<br>~~ee~~|61<br>~~ee~~|80<br>~~ee~~||VGS= -4.5V,ID= -5A<br>~~ee~~|
|Forward Transfer Admittance<br>~~ee~~||Yfs|<br>~~ee~~|-<br>~~ee~~|4.8<br>~~ee~~|-<br>~~ee~~|S<br>~~ee~~|VDS= -10V,ID= -5.3A<br>~~ee~~|
|Diode Forward Voltage|VSD|-|-0.7|-1.0|V|VGS= 0V,IS= -1.7A|
|**DYNAMIC CHARACTERISTICS  (Note 7)**|||||||
|Input Capacitance<br>~~——~~|Ciss<br>~~——~~|-<br>~~——~~|620<br>~~——~~|-<br>~~——~~|pF<br>~~——~~|VDS= -15V, VGS= 0V,<br>f = 1.0MHz<br>~~——~~|
|Output Capacitance<br>~~——~~|Coss<br>~~——~~|-<br>~~——~~|83<br>~~——~~|-<br>~~——~~|pF<br>~~——~~||
|Reverse Transfer Capacitance<br>~~——~~|Crss<br>~~——~~|-<br>~~——~~|62<br>~~——~~|-<br>~~——~~|pF<br>~~——~~||
|Gate resistance<br>~~——~~<br>~~———~~|Rg<br>~~——~~|-<br>~~——~~|10.8<br>~~——~~|-<br>~~——~~<br>~~ee~~|Ω<br>~~——~~<br>~~ee~~|VDS= 0V,VGS= 0V,f = 1.0MHz<br>~~——~~<br>~~eee~~|
|Total Gate Charge(VGS= -4.5V)<br>~~———~~|Qg|-|5.1|-<br>~~ee~~|nC<br>~~ee~~|VDS= -15V, ID= -6A<br>~~eee~~<br>~~ee~~|
|Total Gate Charge(VGS= -10V)<br>~~———~~|Qg|-|10.5|-<br>~~ee~~|nC<br>~~ee~~||
|Gate-Source Charge<br>~~———~~|Qgs|-|1.8|-<br>~~ee~~|nC<br>~~ee~~||
|Gate-Drain Charge<br>~~———~~<br>~~————~~|Qgd|-|1.9|-<br>~~ee~~<br>~~ee~~|nC<br>~~ee~~<br>~~ee~~||
|Turn-On DelayTime<br>~~———~~<br>~~————~~|tD(on)|-|6.8|-<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~|VDD= -15V, VGS= -10V,<br>RG= 6Ω, ID= -1A<br>~~eee~~<br>~~ee~~|
|Turn-On Rise Time<br>~~———~~<br>~~————~~|tr|-|4.9|-<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~||
|Turn-Off DelayTime<br>~~————~~|tD(off)|-|28.4|-<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~————~~|tf|-|12.4|-<br>~~ee~~|ns<br>~~ee~~||
|Reverse RecoveryTime<br>~~————~~<br>~~7~~|trr<br>~~7~~|-<br>~~7~~|14<br>~~7~~|-<br>~~ee~~<br>~~7~~|ns<br>~~ee~~<br>~~7~~|IF= 12A, di/dt = 500A/μs<br>~~ee~~<br>~~7~~|
|Reverse RecoveryCharge<br>~~7~~|Qrr<br>~~7~~|-<br>~~7~~|11<br>~~7~~|-<br>~~7~~|nC<br>~~7~~||



Notes: 4. AEC-Q101 VGS maximum is ±20V 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 

6. Short duration pulse test used to minimize self-heating effect. 

7. Guaranteed by design. Not subject to product testing. 

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DMP3050LSS Document number: DS35647 Rev. 4 - 2 

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**DMP3050LSS** 

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20 VGS = -10V VGS = -5.0V 20<br>VDS = -5.0V<br>15 15<br>VGS = -4.5V<br>VGS = -4.0V<br>10 10<br>[ ann J<br>VGS = -3.5V<br>5 5<br>CL VGS = -3.0V J. TA = 150°C TA = 85°C<br>TA = 125°C TA = 25°C<br>0 fr VGS = -2.5V 0 OH TA = -55°C<br>0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 5<br>-VDS, DRAIN -SOURCE VOLTAGE (V) -VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics<br>0.12 TTT LLL 0.10<br>0.10<br>0.08<br>0.08<br>BRRRRRED Ze AG<br>0.06<br>0.06<br>Littl | 0.04 TP SOT<br>0.04<br>HERRRREEEE a<br>toot 0.02 LLL LE<br>0.02<br>0 0<br>0 TEELELELE 4 8 12 16 20 3 eT 4 5 EEL 6 7 8 EL 9 10<br>-ID, DRAIN SOURCE CURRENT (A) -VGS, GATE SOURCE VOLTAGE (V)<br>Fig. 3 Typical On-Resistance vs.  Fig. 4 Typical On-Resistance vs.<br>Drain Current and Gate Voltage  Drain Current and Gate Voltage<br>0.10 1.7<br>VGS = -4.5V 1.5 ti LELEL<br>0.08<br>1.3 [i LiL Le<br>0.06 TA = 150°C<br>TA = 125°C 1.1 t| tey<br>0.04 T A  = 85°C<br>TA = 25°C 0.9 eee<br>TA = -55°C<br>0.02<br>0.7 art tt|<br>0 0.5 Fer<br>0 5 10 15 20 -50 -25 0 25 EE 50  LE 75 100 125 150<br>-ID, DRAIN SOURCE CURRENT (A) TJ, JUNCTION TEMPERATURE (°C)<br>Fig. 5 Typical On-Resistance vs.  Fig. 6 On-Resistance Variation with Temperature<br>Drain Current and Temperature<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>D D<br>-I -I<br>)Ω )Ω<br>,DRAIN-SOURCE ON-RESISTANCE ( ,DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>)Ω<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>, DRAIN-SOURCE ON-RESISTANCE(<br>ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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DMP3050LSS Document number: DS35647 Rev. 4 - 2 

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**www.diodes.com** 

**DMP3050LSS** 

**==> picture [480 x 646] intentionally omitted <==**

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0.10 2.0<br>1.8<br>7 eo<br>0.08 1.6<br>1.4<br>0.06 sanefe VIDGS  -5=   -4.= A 5V =aee 1.2 =Se<br>— 1.0 FeeSs<br>B= oS<br>0.04 0.8<br>VGS = -10V<br>ID  -10= A 0.6<br>0.02 0.4<br>0.2<br>0 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C)<br>Fig. 7 On-Resistance Variation with Temperature Fig. 8 Gate Threshold Variation vs. Ambient Temperature<br>20 10,000<br>f = 1MHz<br>|<br>16 LL |oo<br>1,000<br>12 _ tyes —f po ee—$$—$—$— ————<br>a C iss<br>a|<br>8<br>100 Oe C oss<br>4 SSS C rss<br>0 Evan / 10 |TF<br>0.4 0.6 0.8 1.0 1.2 1.4 0 5 10 15 20 25 30<br>-VSD, SOURCE-DRAIN VOLTAGE (V) -VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 9 Diode Forward Voltage vs. Current Fig. 10 Typical Junction Capacitance<br>10 100<br>R DS(on) P W  = 10µs<br>Limited NESS<br>8<br>10<br>eR NBN<br>rN ee Nee [ie] [eee]<br>Vp3 -15V |_| TN INN SN NEBME<br>6<br>DC<br>vot 1 orNINENATINO<br>Lf tN PW = 10s INS easel<br>4 PW = 1s<br>Wa Ee P W  = 100ms PINES TONNE TTT<br>PW = 10ms<br>0.1 T  = 150°C P W  = 1ms<br>2 / | J(max) |__| PW = 100µs ANY<br>TA = 25°C<br>VSingle PulseGS = -10V re eeee<br>DUT on 1 * MRP Board<br>0 Are 0.01 eea ee eee lll<br>0 2 4 6 8 10 12 0.1 1 10 100<br>Qg, TOTAL GATE CHARGE (nC) -VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 11 Gate-Charge Characteristics Fig. 12 SOA, Safe Operation Area<br>)Ω<br>, GATE THRESHOLD VOLTAGE(V)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>GS(TH)<br>DS(on) V<br>R<br>, SOURCE CURRENT (A)<br>S<br>-I , JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, DRAIN CURRENT (A)<br>D<br>-I<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>-V<br>**----- End of picture text -----**<br>


4 of 6 **www.diodes.com** 

DMP3050LSS Document number: DS35647 Rev. 4 - 2 

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**DMP3050LSS** 

**==> picture [410 x 458] intentionally omitted <==**

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1<br>PE D = 0.7 Nt th<br>FEMI D = 0.5 tt TOTTI<br>Fa D = 0.3 eR HTT TTT<br>0.1<br>Fe D = 0.1 ih D = 0.9 UE<br>SEStee ee<br>D = 0.05<br>TAI TTT LL Pe eg<br>a a? oe<br>D = 0.02<br>ETT LMT TT<br>0.01 re ee ZA<br>D = 0.01<br>ea D = 0.005 0 RθJA(t) = r(t) * RθJA TTT<br>bo titeHe ETT R θJA  = 87°C/W melmeal<br>Duty Cycle, D = t1/ t2<br>Single Pulse<br>0.001 Trl CMCC il<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIMES (sec)<br>Fig. 13  Transient Thermal Resistance<br>e Outline Dimensions<br>Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.<br>ngage<br>Plott fi ti SO-8<br>| Dim  Min  Max<br>A  -  1.75<br>E1 E A1  0.10 0.20<br>A1 i L ry Gauge PlaneSeating Plane A2 A3  1.30 0.15  1.50 0.25<br>b 0.3 0.5<br>Detail ‘A’ D  4.85 4.95<br>To oo<br>| L_| L_| | 1 E  5.90 6.10<br>h 7°~9° E1  3.85 3.95<br>45° e  1.27 Typ<br>A2 A A3 Detail ‘A’ h  -  0.35<br>L  0.62  0.82<br>UPet e b , , = ie) θ 0° 8°<br>D All Dimensions in mm<br>r(t), TRANSIENT THERMAL RESISTANCE<br>0.254<br>**----- End of picture text -----**<br>


## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 

## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

**==> picture [94 x 103] intentionally omitted <==**

**----- Start of picture text -----**<br>
X<br>TOG E<br>C1<br>C2<br>Y<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value (in mm)**|
|---|---|
|**X**|0.60|
|**Y**|1.55|
|**C1 **|5.4|
|**C2 **|1.27|



5 of 6 **www.diodes.com** 

DMP3050LSS Document number: DS35647 Rev. 4 - 2 

September 2012 © Diodes Incorporated 

**DMP3050LSS** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

A.   Life support devices or systems are devices or systems which: 

1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2012, Diodes Incorporated 

**www.diodes.com** 

6 of 6 **www.diodes.com** 

DMP3050LSS Document number: DS35647 Rev. 4 - 2 

September 2012 © Diodes Incorporated 



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- [Supplier page](https://es.farnell.com/diodes-inc/dmp3050lss-13/mosfet-p-ch-30v-4-8a-soic/dp/3943765)
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