# Power MOSFET, P Channel, 30 V, 9.5 A, 0.015 ohm, PowerDI3333, Surface Mount

![Product image](https://novapart.co/image/farnell:3943762/)

**URL**: https://novapart.co/products/DMP3035SFG-7/power-mosfet-p-channel-30-v-95-a-0015-ohm
**SKU**: DMP3035SFG-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1560
**Stock**: 1000+
**Lead Time**: 134 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2.3W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PowerDI3333 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 9.5A |
| Drain Source On State Resistance | 0.015ohm |
| Gate Source Threshold Voltage Max | 1.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943762/)

## **NOT RECOMMENDED FOR NEW DESIGN USE DMP3036SFV DMP3035SFG 30V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON) max**|**ID max**<br>**TA = +25°C**|
|-30V|20mΩ @ VGS= -10V|-9.5A|
||29mΩ @ VGS= -5V|-8.5A|



## **Features and Benefits** 

- Low RDS(ON) – Ensures on state losses are minimized 

- Small form factor thermally efficient package enables higher density end products 

- Occupies just 33% of the board area occupied by SO-8 enabling smaller end product 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Description and Applications** 

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

- Backlighting 

- Power Management Functions 

- DC-DC Converters 

## **Mechanical Data** 

- Case: PowerDI[®] 3333-8 

- Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal Connections Indicator: See Diagram 

   - Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

   - Weight: 0.072 grams (Approximate) 

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<br>Drain<br>S Pin 1<br>S<br>S<br>G<br>Gate<br>D<br>D<br>D Source<br>D<br>Top View  Bottom View  Internal Schematic<br>Ordering Informationg Information Information (Note 4)<br>Part Number Case Packaging<br>DMP3035SFG-7  PowerDI3333-8  2000/Tape & Reel<br>DMP3035SFG-13 PowerDI3333-8 3000/Tape & Reel<br>Notes:  1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.<br>2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and<br>                       Lead-free.<br>**----- End of picture text -----**<br>


## **Ordering Informationg Information Information** (Note 4) 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

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**----- Start of picture text -----**<br>
P35<br>YYWW<br>**----- End of picture text -----**<br>


P35 = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 18 = 2018) WW = Week Code (01 to 53) 

_PowerDI is a registered trademark of Diodes Incorporated._ 

1 of 7 **www.diodes.com** 

DMP3035SFG Document number: DS35440  Rev. 4 - 3 

December 2018 © Diodes Incorporated 

**DMP3035SFG** 

## **NOT RECOMMENDED FOR NEW DESIGN USE DMP3036SFV** DIODES'nm COR PORATED | ~~id~~ 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

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||||||
|---|---|---|---|---|
|Characteristic|Symbol|Value|Unit|
|Drain-Source Voltage|VDSS|-30|V|
|Gate-Source Voltage|VGSS|±25|V|
|Steady State|TTAA = +25°C  = +70°C|ID|-9.5 -6.7|A|
|Continuous Drain Current (Note 6) VGS = -10V|
|t < 10s|TTAA = +25°C  = +70°C|ID|-12.5 -10.0|A|
|Steady State|TTAA = +25°C  = +70°C|ID|-7.0 -5.5|A|
|Continuous Drain Current (Note 6) VGS = -5V|
|t < 10s|TTAA = +25°C  = +70°C|ID|-10.0 -8.0|A|
|Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)|IDM|-70|A|
|Maximum Continuous Body Diode Forward Current (Note 6)|IS|-3.6|A|
|Thermal Characteristics|(@TA = +25°C, unless otherwise specified.) A = +25°C, unless otherwise specified.)  = +25°C, unless otherwise specified.)|
|Characteristic|Symbol|Value|Unit|
|Total Power Dissipation (Note 5)|PD|0.95|W|
|Steady State|135|°C/W|
|Thermal Resistance, Junction to Ambient (Note 5)|t < 10s|RJA|65|°C/W|
|Total Power Dissipation (Note 6)|PD|2.3|W|
|Steady State|55|°C/W|
|Thermal Resistance, Junction to Ambient (Note 6)|t < 10s|RJA|26|°C/W|
|Thermal Resistance, Junction to Case (Note 6)|RJC|6.14|°C/W|
|Operating and Storage Temperature Range|TJ, TSTG|-55 to +150|°C|
|Notes:|5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.|
|6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.|

**----- End of picture text -----**<br>


## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) A = +25°C, unless otherwise specified.)  = +25°C, unless otherwise specified.) 

**==> picture [477 x 209] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 P44 fie 100<br>[|Se RLimitedDS(ON) 0 eeSN Se P    = 10  sW µ NY 90 A Single PulseRJA = 61C/W Il<br>GEN T a 80 UNV AN AH R JA(t)  = r (t)  * R JA i<br>10 TJ - TA = P * RJA(t)<br>[A)] 1A Ne TN 70 NVA AH i<br>Fae N DC ENAeg = ae 60 CN\ TTT<br>i P    = 10sW TINIAN<br>C [URRENT(] 1 —-—- QT 4 P    = 1sW RoRRRETIN 7 50 ENC | ELC ETE<br>Sy P    = 100msW BBR 40 ULV ARE ANA ELEN<br>P= eA P    = 10msW Sy Sd) is<br>D [RAIN] P    = 1msW 30<br>-, [I] D 0.1 aN P    = 100µsW UIWUMATVVANEE ENA ET<br>I I NN ULV ARE THAR ELENA<br>20<br>T          = 150°CJ(max)<br>a T  = 25°CA S e 10 BAT<br>Single Pulse<br>0.01 E e ee 0 TAME LTAAUETITUEI<br>0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>-V    , DRAIN-SOURCE VOLTAGE (V)DS t1, PULSE DURATION TIME (sec)<br>Fig. 1 SOA, Safe Operation Area Fig. 2 Single Pulse Maximum Power Dissipation<br>, PEAK TRANSIENT POIWER (W)<br>P<br>(PK)<br>, DRAIN CURRENT (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


2 of 7 **www.diodes.com** 

DMP3035SFG Document number: DS35440  Rev. 4 - 3 

December 2018 © Diodes Incorporated 

**NOT RECOMMENDED FOR NEW DESIGN USE DMP3036SFV** 

**DMP3035SFG** | 

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**----- Start of picture text -----**<br>
|||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|1|
|Na|D = 0.7|et|ett|
|FE|D = 0.5|
|OR|D = 0.3|a=|
|0.1|Pf|\|
|PUTTIN|D = 0.1|CUIrTM|D = 0.9|
|poa|a|0|aee0|
|erna|eee|
|D = 0.05|
|FEAT|
|TN|et|
|D = 0.02|
|TAIT|LPITTTTCT|RT|
|0.01|Se|a|eeea|
|BER|D = 0.01|ee|
|a|D = 0.005|ee|et|ee|ee|R|Rθ|JA|(t) = r(t)|(t) = r(t)|Oa|** R|RθJAJA|oe|atl|
|Ft|A|eH|RRθ|JA|= 54|[= 54]|[℃]|癈|[/W ]|/W|ert|HT|
|Ht|ec|Et|D|ututyy CCycyclele,, D = t1/ t2 D = t1 /|t2|ME|
|Single Pulse|
|0.001|Cull|CC|CCT|Nl|
|0.00001|0.0001|0.001|0.01|0.1|1|10|100|1,000|
|t1, PULSE DURATION TIMES (sec)|
|t1, PULSE DURATION TIME (sec)|
|Fig. 3 Transient Thermal Resistance|
|Fig. 3 Transient Thermal Resistance|
|Electrical Characteristics|(@TA = +25°C, unless otherwise specified.) A = +25°C, unless otherwise specified.)  = +25°C, unless otherwise specified.)|
|Pe|Characteristic|Symbol|Min|Typ|Max|Unit|Test Condition|
|ny|OFF CHARACTERISTICS (Note 7)|<i|Oe, Cy|Mi,|Ch,’|Ae|
|pT|Drain-Source Breakdown Voltage|BVDSS|-30|—|—|V|VGS = 0V, ID = -250μA|
|poe|Zero Gate Voltage Drain Current|IDSS|PO|—|—|-1.0|μA|VDS = -30V, VGS = 0V|
|po|Gate-Source Leakage|IGSS|—|—|±100|nA|VGS = ±25V, VDS = 0V|
|Po|ON CHARACTERISTICS (Note 7)|
|(A)|Gate Threshold Voltage|VGS(TH)|-1.0|-1.7|-2.5|V|VDS = VGS, ID = -250μA|
|I|(|
|eS|Static Drain-Source On-Resistance|RDS(ON)|— —|15 21|20 29|mΩ|VVGSGS = -10V = -5V, I, ID = -5A D = -8A|
|Forward Transfer Admittance|2a||Yfs||—|ee|22|ee|—|S|VDS = -5V, ID = -10.0A|ee|
|po|ee a|po|
|Diode Forward Voltage|VSD|—|-0.74|-1.0|V|VGS = 0V, IS = -1A|
|po|DYNAMIC CHARACTERISTICS (Note 8|Nr|)|pb|
|ey a, CQme|
|Poe|Input Capacitance|Ciss|—|1633|—|pF|
|Output Capacitance|Coss|—|459|—|pF|VDS = -15V, VGS = 0V,|
|a|f = 1.0MHz|
|Reverse Transfer Capacitance|Crss|—|214|—|pF|
|||ee|OO|a|
|Gate Resistance|Rg|—|6.5|13|Ω|VDS = 0V, VGS = 0V, f = 1MHz|
|Po|me|
|Total Gate Charge VGS = -4.5V|Qg|—|17|—|nC|
|Po|gm|
|mY|Total Gate Charge VGS = -10V|Qg|—|35.5|—|nC|
|VDS = -15V, VGS = -10V, ID = -8A|
|ll|Gate-Source Charge|Qgs|—|4.6|—|nC|
|||ame|
|aes|Gate-Drain Charge|Qgd|—|5.7|—|nC|
|||
|Turn-On Delay Time|tD(ON)|—|8.5|—|ns|
|Po|
|Turn-On Rise Time|tR|—|14|—|ns|VGEN = -10V, VDD = -15V,|
|a|
|OO|Turn-Off Delay Time|tD(OFF)|—|50|—|ns|RGEN = 3Ω, ID = -15A|
|a|Turn-Off Fall Time|tF|—|25.8|—|ns|

**----- End of picture text -----**<br>


**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) A = +25°C, unless otherwise specified.)  = +25°C, unless otherwise specified.) 

Notes: 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 

3 of 7 **www.diodes.com** 

DMP3035SFG Document number: DS35440  Rev. 4 - 3 

December 2018 © Diodes Incorporated 

**DMP3035SFG** 

**==> picture [483 x 693] intentionally omitted <==**

**----- Start of picture text -----**<br>
NOT RECOMMENDED FOR NEW DESIGN<br>USE DMP3036SFV DMP3035SFG<br>30 30<br>V     = -10VGS<br>V     = -4.5VGS<br>25 25 VDS = -5.0V<br>)<br>N [T(A] 20 an V     = -4.0VGS 20 ae<br>V     = -3.5VGS<br>7) a fe<br>C [URRE] 15 15<br>|) Ae<br>I [N]<br>V     = -3.0VGS<br>D [RA] 10 10<br>, D<br>- [I] TA = 150C TA = 85C<br>5 5 T A  = 125C TA = 25C<br>0 V     = -2.0VGS V     = -2.5VGS 0 TA = -55C<br>0 0.5 1.0 1.5 2.0 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>-V    , DRAIN -SOURCE VOLTAGE (V)DS -VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 4 Typical Output Characteristics Fig. 5 Typical Transfer Characteristics<br>0.03 0.05<br>VGS= -4.5V<br>|] yy 0.04 N K@)<br>TA = 150C<br>0.02<br>0.03 TA = 125  C<br>TA = 85C<br>| is 0.02 SS T A  = 25C<br>0.01<br>LEO’ OfeSer TA = -55C<br>0.01<br>Tic} =<br>0 0<br>0 5 10 15 20 25 30 0 5 10 15 20 25 30<br>-ID, DRAIN SOURCE CURRENT (A)  -ID, DRAIN SOURCE CURRENT (A)<br>SEK Fig. 6 Typical On-Resistance vs.  [-7] [>s] N [eeneee] PTT Fig. 7 Typical On-Resistance vs.<br>Drain Current and Gate Voltage  Drain Current and Temperature<br>1.7 0.040<br>| 4N _ 0.036 P| | | | fp [fd]<br>1.5<br>0.032<br>1.3 0.028 VIDGS  -5= = A-5V<br>0.024<br>1.1 0.020<br>0.016<br>0.9 aoa ae ae VGS = -10V<br>ST 0.012 aaa ID  -10= A<br>0.008<br>0.7<br>Alii ttt 0.004 PP<br>0.5 PLE EELLL 0 HCE EEA<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)<br>Fig. 8 On-Resistance Variation with Temperature Fig. 9 On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A)<br>D<br>-I<br>)<br>, DRAIN-SOURCE ON-RESISTANCE(<br>DS(ON)<br>R<br>DS(ON)<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (Normalized)<br>, DRAIN CURRENT (A)<br>D<br>-I<br>)<br>,DRAIN-SOURCE ON-RESISTANCE(<br>R<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(on)<br>**----- End of picture text -----**<br>


4 of 7 **www.diodes.com** 

DMP3035SFG Document number: DS35440  Rev. 4 - 3 

December 2018 

© Diodes Incorporated 

**==> picture [351 x 20] intentionally omitted <==**

**----- Start of picture text -----**<br>
NOT RECOMMENDED FOR NEW DESIGN<br>USE DMP3036SFV DMP3035SFG<br>**----- End of picture text -----**<br>


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3.0 30<br>2.5 PEL EEL 25 a<br>2.0 20<br>titi itt fe<br>1.5 15<br>1.0 SS 10<br>AT rSsS CCRT<br>0.5 5<br>Seen >a<br>0 0<br>-50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2<br>TA, AMBIENT TEMPERATURE  ( 癈 °C ) -VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 10 Gate Threshold Variation vs. Ambient Temperature PTL EELLL a Fig. 11 Diode Forward Voltage vs. Current<br>10,000 10,000<br>f = 1MHz<br>) T   = 150°CA<br>[nA] 1,000<br>N [T(]<br>T   = 125°CA<br>Ciss<br>C [URRE]<br>1,000 100<br>G [E]<br>A T   = 85°CA<br>a K SS eee eee<br>A<br>Coss L [E]<br>SSS , SS Goa 10<br>D<br>- [I]<br>Crss<br>T   = 25°CA<br>100 1<br>SS aN a ——<br>0 5 10 15 20 0 4 8 12 16 20<br>SS=<br>-VDS, DRAIN-SOURCE VOLTAGE (V) -V    , DRAIN-SOURCE VOLTAGE (V)DS<br>Tf Fig. 12 Typical Junction Capacitance [CONS] Fig. 13 Typical Drain-Source Leakage Current vs. Voltage<br>10<br>8<br>AN ott.<br>6<br>? OF<br>4<br>rT<br>2 PMT<br>0<br>0 JIT 5 10 TULLE 15 20 25 30 35 40<br>Qg, TOTAL GATE CHARGE (nC)<br>Fig. 14 Gate-Charge Characteristics<br>, JUNCTION CAPACITANCE (pF)<br>C<br>T<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>-V<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>-V<br>, LEAKAGE CURRENT (nA)<br>SS<br>-I<br>GS(TH)<br>, GATE THRESHOLD VOLTAGE(V)<br>V<br>, SOURCE CURRENT (A)<br>S<br>-I<br>**----- End of picture text -----**<br>


5 of 7 **www.diodes.com** 

DMP3035SFG Document number: DS35440  Rev. 4 - 3 

December 2018 © Diodes Incorporated 

**NOT RECOMMENDED FOR NEW DESIGN USE DMP3036SFV** 

**DMP3035SFG** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **PowerDI3333-8** 

**==> picture [461 x 494] intentionally omitted <==**

**----- Start of picture text -----**<br>
A1 A3<br>PowerDI3333-8<br>A<br>Dim  Min  Max  Typ<br>Seating Plane A  0.75 0.85 0.80<br>Toef A1  0.00 0.05 0.02<br>A3   0.203<br>D b  0.27  0.37  0.32<br>L(4x) b2  0.15 0.25 0.20<br>D2<br>1 D  3.25 3.35 3.30<br>D2  2.22  2.32  2.27<br>Pin #1 ID E  3.25 3.35 3.30<br>b2(4x) E4 E2  1.56 1.66 1.61<br>E3  0.79 0.89 0.84<br>pea E4  1.60 1.70 1.65<br>E e   0.65<br>E2 E3 L  0.35 0.45 0.40<br>L1    0.39<br>z    0.515<br>L1(3x) All Dimensions in mm<br>8<br>z(4x) b<br>e<br>ggested Pad Layout ested Pad Layout yout out<br>Please see http://www.diodes.com/package-outlines.html for the latest version.<br>PowerDI3333-8<br>X3<br>X2<br>8 Y4 Dimensions Value (in mm)<br>C  0.650<br>X  0.420<br>Y1 X1 X1  0.420<br>Y2 X2  0.230<br>X3  2.370<br>Y  0.700<br>Y3<br>Y1  1.850<br>Y2  2.250<br>S<br>Y3 3.700<br>Y4  0.540<br>Y<br>1<br>X C<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout ested Pad Layout yout out** 

6 of 7 **www.diodes.com** 

DMP3035SFG Document number: DS35440  Rev. 4 - 3 

December 2018 © Diodes Incorporated 

**NOT RECOMMENDED FOR NEW DESIGN USE DMP3036SFV** 

**DMP3035SFG** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings on noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: we A.   Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or WD 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. SE Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its Oo» representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2018, Diodes Incorporated **www.diodes.com** ee 

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DMP3035SFG Document number: DS35440  Rev. 4 - 3 

December 2018 © Diodes Incorporated 



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- [Supplier page](https://es.farnell.com/diodes-inc/dmp3035sfg-7/mosfet-p-ch-30v-9-5a-powerdi3333/dp/3943762)
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