# Power MOSFET, P Channel, 30 V, 21 A, 0.018 ohm, PowerDI 5060, Surface Mount

![Product image](https://novapart.co/image/farnell:3943761RL/)

**URL**: https://novapart.co/products/DMP3028LPSQ-13/power-mosfet-p-channel-30-v-21-a-0018-ohm-powerdi
**SKU**: DMP3028LPSQ-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2890
**Stock**: 200+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 1.28W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PowerDI 5060 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 21A |
| Drain Source On State Resistance | 0.018ohm |
| Gate Source Threshold Voltage Max | 1.3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943761RL/)

## **DMP3028LPSQ P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8** 

## **Product Summary** 

|**BVDSS**<br>**RDS(ON) Max**<br>**ID Max**<br>**TC = +25°C**<br>-30V<br>28mΩ @ VGS= -10V<br>-21A<br>38mΩ @ VGS= -4.5V<br>-18A|**BVDSS**<br>**RDS(ON) Max**<br>**ID Max**<br>**TC = +25°C**<br>-30V<br>28mΩ @ VGS= -10V<br>-21A<br>38mΩ @ VGS= -4.5V<br>-18A|**BVDSS**<br>**RDS(ON) Max**<br>**ID Max**<br>**TC = +25°C**<br>-30V<br>28mΩ @ VGS= -10V<br>-21A<br>38mΩ @ VGS= -4.5V<br>-18A|
|---|---|---|
|**BVDSS**|**RDS(ON) Max**|**ID Max**<br>**TC = +25°C**|
|-30V|28mΩ @ VGS= -10V|-21A|
||38mΩ @ VGS= -4.5V|-18A|



## **Features and Benefits** 

- Low RDS(ON) – Minimizes On-State Losses 

- Small Form Factor Thermally Efficient Package Enables Higher Density End Products 

- 100% Unclamped Inductive Switching – Ensures More Reliability 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **PPAP Capable (Note 4)** 

## **Description and Applications** 

## **Mechanical Data** 

- Case: PowerDI5060-8 

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: 

- Backlighting 

- Power Management Functions 

- DC-DC Converters 

- Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal Connections Indicator: See Diagram 

- Terminals: Finish  Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

- Weight: 0.097 grams (Approximate) 

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PowerDI5060-8<br>**----- End of picture text -----**<br>


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D<br>S D<br>S D<br>G S D<br>G D<br>S<br>Top View<br>Internal Schematic  Pin Configuration<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 5) 

|**Ordering Informationg Information Information** (Note 5)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMP3028LPSQ-13|PowerDI5060-8|2,500/Tape & Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/product-compliance-definitions/. 

   5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

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D D D D<br>: 7<br>P3028LP<br>YY WW<br>S S S G<br>**----- End of picture text -----**<br>


> = Manufacturer’s Marking 1 P3028LP = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 17 = 2017) WW = Week (01 to 53) 

_PowerDI is a registered trademark of Diodes Incorporated._ 

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## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage||VDSS|-30|V|
|Gate-Source Voltage||VGSS|±20|V|
|Continuous Drain Current, VGS= -10V (Note 8)|TC= +25°C<br>TC= +70°C|ID|-21<br>-17|A|
|Maximum Continuous BodyDiode Forward Current(Note 8)||IS|-20|A|
|Pulsed Drain Current(10µs Pulse,DutyCycle = 1%)||IDM|-70|A|
|Pulsed BodyDiode Forward Current(10μs Pulse,DutyCycle = 1%)||ISM|-70|A|
|Avalanche Current,L = 0.1mH(Note 9)||IAS|-21.4|A|
|Avalanche Energy, L = 0.1mH(Note 9)||EAS|22|mJ|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 6)||PD|1.28|W|
|Thermal Resistance,Junction to Ambient(Note 6)|SteadyState|RJA|100|°C/W|
|Total Power Dissipation(Note 7)||PD|2.12|W|
|Thermal Resistance,Junction to Ambient(Note 7)|SteadyState|RJA|60|°C/W|
|Total Power Dissipation(Note 8)||PD|35|W|
|Thermal Resistance, Junction to Case(Note 8)||RJC|3.0|°C/W|
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



## **Electrical Characteristics** (TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics **(TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 10) **<br>~~a~~|||||||
|Drain-Source Breakdown Voltage<br>~~a~~|BVDSS<br>~~a~~|-30<br>~~a~~|—<br>~~a~~|—<br>~~a~~|V<br>~~a~~|VGS= 0V, ID= -250μA<br>~~a~~|
|Zero Gate Voltage Drain Current<br>~~ee~~|IDSS<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|-1<br>~~ee~~|μA<br>~~ee~~|VDS= -30V, VGS= 0V<br>~~ee~~|
|Gate-Source Leakage<br>~~ee~~|IGSS<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|±100<br>~~ee~~|nA<br>~~ee~~|VGS= ±20V, VDS= 0V<br>~~ee~~|
|**ON CHARACTERISTICS(Note 10) **<br>~~re~~|||||||
|Gate Threshold Voltage<br>~~re~~|VGS(TH)<br>~~re~~|-1.0<br>~~re~~|-1.3<br>~~re~~|-2.4<br>~~re~~|V<br>~~re~~|VDS= VGS, ID= -250μA<br>~~re~~|
|Static Drain-Source On-Resistance<br>~~ee~~|RDS(ON)<br>~~ee~~|—<br>~~ee~~|18<br>~~ee~~|28<br>~~ee~~|mΩ<br>~~ee~~|VGS= -10V, ID= -7A<br>~~ee~~|
|||—<br>~~ee~~|28<br>~~ee~~|38<br>~~ee~~||VGS= -4.5V, ID= -6.2A<br>~~ee~~|
|Diode Forward Voltage<br>~~Be~~|VSD<br>~~Be~~|—<br>~~Be~~|-0.7<br>~~Be~~|-1.2<br>~~Be~~|V<br>~~Be~~|VGS= 0V, IS= -2.1A<br>~~Be~~|
|**DYNAMIC CHARACTERISTICS(Note 11)**<br>~~Be~~|||||||
|Input Capacitance|Ciss|—|1372|—|pF|VDS= -15V, VGS= 0V,<br>f = 1.0MHz|
|Output Capacitance|Coss|—|161|—|pF||
|Reverse Transfer Capacitance|Crss|—|127|—|pF||
|Gate Resistance<br>~~pO~~|Rg|—|8.5|—|Ω|VDS= 0V, VGS= 0V, f = 1.0MHz|
|Total Gate Charge(VGS= -4.5V)<br>~~GO~~|Qg<br>~~GO~~|—<br>~~GO~~|11<br>~~GO~~|—<br>~~GO~~|nC<br>~~GO~~|VDS= -15V, ID= -7A|
|Total Gate Charge(VGS= -10V)|Qg|—|22|—|nC||
|Gate-Source Charge|Qgs|—|3.0|—|nC||
|Gate-Drain Charge|Qgd|—|3.7|—|nC||
|Turn-On DelayTime<br>~~pO~~<br>~~See~~|tD(ON)<br>~~See~~|—<br>~~See~~|4.8<br>~~See~~|—<br>~~See~~|ns<br>~~See~~|VDD= -15V, VGS= -10V,<br>Rg= 6Ω, ID= -7A<br>~~See~~|
|Turn-On Rise Time<br>~~See~~|tR<br>~~See~~|—<br>~~See~~|5.5<br>~~See~~|—<br>~~See~~|ns<br>~~See~~||
|Turn-Off DelayTime<br>~~See~~|tD(OFF)<br>~~See~~|—<br>~~See~~|32.8<br>~~See~~|—<br>~~See~~|ns<br>~~See~~||
|Turn-Off Fall Time<br>~~See~~|tF<br>~~See~~|—<br>~~See~~|17.74<br>~~See~~|—<br>~~See~~|ns<br>~~See~~||
|Reverse RecoveryTime<br>~~ee~~|tRR<br>~~ee~~|—<br>~~ee~~|10.8<br>~~ee~~|—<br>~~ee~~|ns<br>~~ee~~|IS= -7A, dI/dt = 100A/μs<br>~~ee~~|
|Reverse RecoveryCharge<br>~~ee~~|QRR<br>~~ee~~|—<br>~~ee~~|3.4<br>~~ee~~|—<br>~~ee~~|nC<br>~~ee~~||



- Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 8. Thermal resistance from junction to soldering point (on the exposed drain pad). 

   9. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 

   10. Short duration pulse test used to minimize self-heating effect. 

   11. Guaranteed by design. Not subject to product testing. 

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30.0 30<br> VGS = -4.0V  VDS = -5.0V<br>25.0 a a  VGS = -4.5V  a 25 eee Ae<br> VGS = -3.5V<br>20.0 20<br>e /  VGS = -5.0V  a f e<br>15.0  VGS = -10.0V  15<br> VGS = -3.0V<br>10.0 yZea 10 —f<br>|  VGS = -2.5V  TJ = 150 ℃ —<br>5.0 5 TJ = 125 ℃ TJ = 85 ℃<br> VGS = -2.1V  TJ = 25 ℃<br>0.0 po YP ___ _— 0 ifWy TJ = -55 ℃ | |<br>0 0.5 1 1.5 2 2.5 3 1 2 3 4 5<br>VDS, DRAIN-SOURCE VOLTAGE (V)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic  Figure 2. Typical Transfer Characteristic<br>0.040 0.5<br>ID = -7.0A<br>0.035 0.4 TE LL<br> VGS = -4.5V<br>0.030<br>0.3 SECC Eee<br>0.025<br>0.2 ACE<br>0.020<br> VGS = -10V  0.1 AICP EE<br>0.015<br>ID = -6.2A<br>0.010 0 ee e<br>0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 16 18 20<br>ID, DRAIN-SOURCE CURRENT (A)   VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs. Drain Current and  Figure 4. Typical Transfer Characteristic<br>Gate Voltage<br>0.04 2<br>VGS = -10V GS = -10V = -10V<br>0.0350.030.03 eeP|P| fFee|ee|| eeefll]fll] 1.81.6 YP|| || || || ft| lfft lf|<br>TJ = 125J = 125= 125 ℃ TJ = 150J = 150= 150 ℃<br>0.025 1.4  VGS = -4.5V, ID = -6.2A<br>0.02 py TJ = 85J = 85= 85 ℃ 1.2 nea<br>= e ee a e<br>0.015 TJ = 25J = 25= 25 ℃ 1<br>0.0050.01 Seeee TJ = -55J = -55= -55 ℃ SS 0.80.6 Eee a  VGS = -10V, ID = -7.0A<br>0 0.4<br>0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT (A) D, DRAIN CURRENT (A) , DRAIN CURRENT (A)  TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 5. Typical On-Resistance vs. Drain Current and  Figure 6. On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A) ID , DRAIN CURRENT (A) ID<br>)  ) <br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE (<br>RDS(ON) RDS(ON)<br>)<br><br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>,  DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>DS(ON) R<br>R<br>**----- End of picture text -----**<br>


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0.04<br>VGS = -10V GS = -10V = -10V<br>0.0350.030.03 eeP|P| fFee|ee|| eeefll]fll]<br>TJ = 125J = 125= 125 ℃ TJ = 150J = 150= 150 ℃<br>0.025<br>0.02 py TJ = 85J = 85= 85 ℃<br>=<br>0.015 TJ = 25J = 25= 25 ℃<br>0.01 TJ = -55J = -55= -55 ℃ SS<br>0.0050.01 Seeee<br>0<br>0 5 10 15 20 25 30<br>ID, DRAIN CURRENT (A) D, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>Figure 5. Typical On-Resistance vs. Drain Current and<br>Temperature<br>)<br><br>,  DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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0.05 2<br>0.045 Ff | | [ ft ft ff 1.8 PF | | [| | | ft ff<br>0.04 1.6<br>ID = -1mA<br>0.035  VGS = -4.5V, ID = -6.2A  1.4<br>0.03 1.2<br>ID = -250μA<br>0.025 1<br>0.02 0.8<br>0.015 e= ———seee 0.6 SEES<br>0.01  VGS = -10V, ID = -7.0A  0.4<br>0.005 |Py| || | | 0.2 PFPF || || [[ || f[[| ftft ffff<br>0 | | | | [| | | | | 0 | | | | | | | ft<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ( ℃ )  TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 7. On-Resistance Variation with Temperature  Figure 8. Gate Threshold Variation vs. Junction<br>Temperature<br>30 10000<br>! ss<br>VGS = 0V  f = 1MHz<br>25 eee |e| r ssoee ee<br>Ciss<br>20 eee |e 1000 ta eet<br>15 Ne eeee<br>Coss<br>10 100<br>Crss<br>TJ = 150 [o] C  L TJ = 85 [o] C  S S<br>5 i} TJ = 25 [o] C  S o<br>TJ = 125 [o] C<br>TJ = -55 [o] C<br>0 Z///Y/' ) 10 fF+| | fl Tl rT<br>0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 30<br>VSD, SOURCE-DRAIN VOLTAGE (V)  VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current  Figure 10. Typical Junction Capacitance<br>10 100<br>RDS(ON) Limited  PW =<br> 1µs<br>8<br>Wa / eee ae =a ae<br>10 EISSN<br>6 TAT) Ne PW = 10µs  enBeall<br>PW = 100µs<br>4 BaasALT] i] aelm PW = 1ms  TT/ANN SAHTTTBaal<br>1 PW = 10ms<br>VDS = -15V, ID = -7A  TJ(Max) = 150 ℃   PW = 100ms<br>2 TC = 25 ℃ PW = 1s<br>Single Pulse<br>DUT on Infinite Heatsink<br>0 eae 0.1 VGS = -10V  NlPoon<br>0 2 4 6 8 10 12 14 16 18 20 22 0.1 1 10 100<br>Qg (nC)  VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. Gate Charge  Figure 12. SOA, Safe Operation Area<br>)<br> , GATE THRESHOLD VOLTAGE (V)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>GS(TH)<br>V<br>DS(ON)<br>R<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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1<br>SSSSS<br>S D=0.7  S ere<br>C D=0.5  E<br>TOA TIN TET<br>D=0.3<br>D=0.9<br>F TTH PT TE FLT<br>0.1 eee |AINE<br>FO a D=0.1  e Lu EEE UL<br>See D=0.05  aii amet ieee oes ie eeteee<br>Ce<br>He<br>ee oA | | |<br>0.01 e D=0.02  200<br>G D ee eee<br>ee<br>aah tt Pk<br>} D=0.01  a ee<br>| D=0.005  PET PTT RθJC(t) = r(t) * RθJC LTT<br>D=Single Pulse  RθJC = 3.0 ℃ /W<br>Duty Cycle, D = t1 / t2<br>0.001<br>1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **PowerDI5060-8** 

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D<br>D1 Detail A PowerDI5060-8<br>0 (4X) Dim  Min  Max  Typ<br>A  0.90 1.10 1.00<br>c A1  0.00  0.05  <br>A1 b 0.33 0.51  0.41<br>b2  0.200 0.350 0.273<br>E1 E b3  0.40 0.80 0.60<br>e c  0.230 0.330 0.277<br>D  5.15 BSC<br>D1  4.70 5.10 4.90<br>l 1 o fy, t s y 0 1 (4X) " eo D2  3.70 4.10 3.90<br>D3  3.90 4.30 4.10<br>b (8X) tee e/2 a E  ee 6.15 BSC<br>1 E1  5.60 6.00 5.80<br>L | iii b2 (4X) -—_}+—_}—_+— E2  3.28 3.68 3.48<br>D3 K E3 3.99 4.39 4.19<br>e  1.27 BSC<br>G  0.51  0.71  0.61<br>A E3 E2 D2 b3 (4X) K  0.51  <br>M<br>L  0.51  0.71  0.61<br>M1 L1  0.100 0.200 0.175<br>ST Detail A padmele —_ —+a+ 4<br>M  3.235 4.035 3.635<br>G L1 ie M1  1.00 1.40 1.21<br>Θ  10°  12°  11°<br>ne Θ1  6°  8°  7°<br>LC [—“(CsisCSCSCSCiszr] All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **PowerDI5060-8** 

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X4<br>Y2<br>TO X3<br>Y3 Y1<br>4<br>| | |<br>X2<br>Y5<br>Y4 X1<br>Y7<br>C G1<br>Y6 (oa.<br>Y(4x)<br>w t) X Le U G Uy<br>**----- End of picture text -----**<br>


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Dimensions  Value (in mm)<br>C  1.270<br>G  0.660<br>G1  0.820<br>X  0.610<br>X1  4.100<br>X2  0.755<br>X3  4.420<br>X4  5.610<br>Y  1.270<br>Y1  0.600<br>Y2  1.020<br>Y3  0.295<br>Y4  1.825<br>Y5  3.810<br>Y6  0.180<br>Y7  6.610<br>**----- End of picture text -----**<br>


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## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

A.   Life support devices or systems are devices or systems which: 

1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2017, Diodes Incorporated 

**www.diodes.com** 

7 of 7 **www.diodes.com** 

DMP3028LPSQ Document number: DS39811  Rev. 3 - 2 

October 2017 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMP3028LPSQ-13/power-mosfet-p-channel-30-v-21-a-0018-ohm-powerdi)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmp3028lpsq-13/mosfet-p-ch-30v-21a-powerdi-5060/dp/3943761RL)
---

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