# Power MOSFET, P Channel, 30 V, 27 A, 0.02 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:3127361/)

**URL**: https://novapart.co/products/DMP3028LK3-13/power-mosfet-p-channel-30-v-27-a-002-ohm-to-252
**SKU**: DMP3028LK3-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1780
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-27A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.02ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.4V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.6W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 27A |
| Drain Source On State Resistance | 0.02ohm |
| Gate Source Threshold Voltage Max | 2.4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3127361/)

MODES. 

**DMP3028LK3 30V P-CHANNEL ENHANCEMENT MODE MOSFET** ~~J~~ 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**V(BR)DSS**|**RDS(on)**|**ID**<br>**TC = +25°C**|
|-30V|25mΩ @ VGS= -10V|-27A|
||38mΩ @ VGS= -4.5V|-22A|



## **Features** 

- 100% Unclamped Inductive Switch (UIS) Test In Production 

- Low On-Resistance 

- Fast Switching Speed 

- **Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Description** 

## **Mechanical Data** 

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

- Case: TO252 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

## ~~—~~ 

## **Applications** 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 ; **e3** 

- Backlighting 

- DC-DC Converters 

   - Weight: 0.33 grams (Approximate) 

- Power Management Functions 

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D<br>TO252<br>D<br>G S<br>Top View  Top View<br>Pin-Out<br>**----- End of picture text -----**<br>


Equivalent Circuit 

## **Ordering Information** (Notes 4) 

|**Ordering Informationg Information Information** (Notes 4)|||
|---|---|---|
|**Product**|**Case**|**Packaging**|
|DMP3028LK3-13|TO252|2,500/Tape &Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com/products/packages.html . 

## **Marking Information** 

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**----- Start of picture text -----**<br>
P3028L<br>YYWW<br>**----- End of picture text -----**<br>


= Manufacturer’s Marking P3028L= Product Type Marking Code YYWW = Date Code Marking . YY = Year (ex: 14 = 2014) WW = Week (01 - 53) 

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## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Units**|
|Drain-Source Voltage|||VDSS|-30|V|
|Gate-Source Voltage<br>~~a~~<br>~~ee~~|||VGSS<br>~~ee~~|±20<br>~~ee~~|V<br>~~ee~~|
|Continuous Drain Current (Note 6) VGS= -10V<br>~~a~~|Steady<br>State<br>~~ee~~|TC= +25°C<br>TC= +70°C<br>~~ee~~|ID<br>~~ee~~|-27<br>-22<br>~~ee~~|A<br>~~ee~~|
||t<10s<br>~~ee~~<br>~~a~~|TA= +25°C<br>TA= +70°C<br>~~ee~~<br>~~a~~|ID<br>~~ee~~<br>~~a~~|-11<br>-8.6<br>~~ee~~<br>~~a~~|A<br>~~ee~~<br>~~a~~|
|Maximum Body Diode Continuous Current<br>~~a~~<br>~~ee~~<br>~~os~~|||IS<br>~~ee~~<br>~~os~~|-2.5<br>~~ee ~~<br>~~os~~|A<br> ~~ee~~<br>~~os~~|
|Pulsed Drain Current (10µs pulse, duty cycle = 1%)<br>~~os~~|||IDM<br>~~os~~|-40<br>~~os~~|A<br>~~os~~|
|Avalanche Current(Note 7)L = 0.1mH|||IAS|-22|A|
|Avalanche Energy (Note 7)L = 0.1mH|||EAS|24|mJ|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Units**|
|Total Power Dissipation (Note 5)|TA= +25°C|PD|1.6|W|
||TA= +70°C||1.0||
|Thermal Resistance, Junction to Ambient (Note 5)|Steadystate|RθJA|77|°C/W|
||t<10s||34||
|Total Power Dissipation (Note 6)|TA= +25°C|PD|2.8|W|
||TA= +70°C||1.8||
|Thermal Resistance, Junction to Ambient (Note 6)|Steadystate|RθJA|45|°C/W|
||t<10s||29||
|Thermal Resistance, Junction to Case (Note 6)||RθJC|4.5||
|Operatingand Storage Temperature Range||TJ, TSTG|-55 to +150|°C|



**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~ee~~|**Symbol**<br>~~ee~~|**Min**<br>~~ee~~|**Typ **<br>~~ee~~|**Max**<br>~~ee~~|**Unit**<br>~~ee~~|**Test Condition**<br>~~ee~~|
|**OFF CHARACTERISTICS**(Note 8)<br>~~ee~~|||||||
|Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~|-30<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|V<br>~~ee~~|VGS= 0V, ID= -250µA<br>~~ee~~|
|Zero Gate Voltage Drain Current TJ= +25°C<br>~~ee~~|IDSS<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|-1<br>~~ee~~|µA<br>~~ee~~|VDS= -30V, VGS= 0V<br>~~ee~~|
|Gate-Source Leakage<br>~~ee~~|IGSS<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|100<br>~~ee~~|nA<br>~~ee~~|VGS=20V, VDS= 0V<br>~~ee~~|
|**ON CHARACTERISTICS**(Note 8)|||||||
|Gate Threshold Voltage<br>~~ef~~|VGS(th)<br>~~ef~~|-1<br>~~ef~~|—<br>~~ef~~|-2.4<br>~~ef~~|V<br>~~ef~~|VDS= VGS, ID= -250µA<br>~~ef~~|
|Static Drain-Source On-Resistance<br>~~—~~<br>~~Ce~~|RDS(ON)<br>~~—~~<br>~~ee~~<br>|—<br>~~—~~<br>~~ee~~<br>|20<br>~~—~~<br>~~ee~~<br>|25<br>~~—~~<br>|mΩ<br>~~—~~<br>|VGS= -10V, ID= -7A<br>~~—~~|
||||29<br>~~—~~<br>~~ee~~<br>|38<br>~~—~~<br>||VGS= -4.5V, ID= -6.2A<br>~~—~~|
|Diode Forward Voltage<br>~~ee~~<br>~~Ce~~|VSD<br>~~ee~~<br>~~ee~~<br>|—<br>~~ee~~<br>~~ee~~<br>|-0.7<br>~~ee~~<br>~~ee~~<br>|-1.2<br>~~ee~~<br>|V<br>~~ee~~<br>|VGS= 0V, IS= -2.1A<br>~~ee~~|
|**DYNAMIC CHARACTERISTICS**(Note 9)<br>~~ee~~<br>~~eeee~~<br>~~Ce~~|||||||
|Input Capacitance<br>~~Ce~~|Ciss<br>~~ee~~<br>|—<br>~~ee~~<br>|1241<br>~~ee~~<br>|—<br>|pF<br>|VDS= -15V, VGS= 0V<br>f = 1.0MHz|
|Output Capacitance<br>~~Ce~~|Coss<br>~~ee ~~<br>|—<br> ~~ee~~<br>|147<br>~~ee~~<br>|—<br>|pF<br>||
|Reverse Transfer Capacitance<br>|Crss<br>|—<br>|110<br>|—<br>|pF<br>||
|Gate Resistance<br>|RG<br>|—<br>|15<br>|—<br>|Ω<br>|VDS= 0V, VGS= 0V, f = 1MHz|
|Total Gate Charge(VGS= -10V)<br>~~I~~|Qg<br>~~I~~|—<br>~~I~~|22<br>~~I~~|—<br>~~I~~|nC<br>~~I~~|VDS= -15V, ID = -7A<br>~~ee~~|
|Total Gate Charge(VGS= -4.5V)<br>~~|~~|Qg<br>~~|~~|—<br>~~|~~|11<br>~~|~~|—<br>~~|~~|nC<br>~~|~~||
|Gate-Source Charge|Qgs|—|3.5|—|nC||
|Gate-Drain Charge<br>~~——————~~|Qgd|—|4.7|—<br>~~ee~~|nC<br>~~ee~~||
|Turn-On DelayTime<br>~~——————~~|tD(on)|—|9.7|—<br>~~ee~~|ns<br>~~ee~~|VGS= -10V, VDD= -15V,<br>RGEN= 6Ω<br>ID= -7A<br>~~ee~~|
|Turn-On Rise Time<br>~~——————~~|tr|—|17.1|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Delay Time<br>~~——————~~|tD(off)|—|60.5|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~——————~~|tf|—|40.4|—<br>~~ee~~|ns<br>~~ee~~||



- Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 

   6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 

   7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = 25°C. 

   8. Short duration pulse test used to minimize self-heating effect. 

   9. Guaranteed by design. Not subject to product testing. 

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**DMP3028LK3** 

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20 20<br>VGS = -10V VGS = -3.5V VDS = -5.0V<br>VGS = -4.0V<br>15 V GS = -4.5V 15<br>VGS = -5.0V<br>VGS = -3.0V<br>10 aan 10 a a<br>|/ | fe<br>5 5<br>ae TA = 150C TA = 85C<br>VGS = -2.5V TA = 125C TA = 25C<br>TA = -55C<br>0 eS 0 ae<br>0 1 2 3 4 5 0 1 2 3 4 5<br>-VDS, DRAIN -SOURCE VOLTAGE (V) -VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristics Figure 2 Typical Transfer Characteristics<br>0.05 0.05<br>VGS = -4.5V TA = 125C TA = 150C<br>0.04 TILE) «= 0.04  CoE TA = 85°C<br>VGS = -4.5V<br>0.03 J 0.03 ESE TA = 25°C<br>VGS = -10V TA = -55°C<br>0.02 0.02<br>0.01 0.01<br>0 0<br>0 PEEP) 5 10 15 20 25 30 — 0 CEEEEERT- 2 4 6 8 10 12 14 16 18 20<br>-ID, DRAIN SOURCE CURRENT (A) -ID, DRAIN SOURCE CURRENT (A)<br>Figure 3 Typical On-Resistance vs.  Figure 4 Typical On-Resistance vs.<br>Drain Current and Gate Voltage  Drain Current and Temperature<br>1.8 0.05<br>HHH VGS = -10V<br>1.6 ID = -10A 0.04<br>VGS  -5.0= V<br>1.4 ID  -5.0= A<br>Coos 0.03 etree<br>1.2 VGS = -5V<br>ID = -5A VGS = -10V<br>0.02 I D = -10A<br>1 PN) oper ter<br>0.01<br>0.8 SPE pecans<br>0.6-50 Pree -25 0 25 50 75 100 125 150 SSC 0-50 CEE -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)<br>Figure 5 On-Resistance Variation with Temperature Figure 6 On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A)<br>D<br>-I<br>, DRAIN CURRENT (A)<br>D<br>-I<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(on)<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>**----- End of picture text -----**<br>


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## ODES 

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3<br>2.5<br>2<br>-ID = 1mA<br>SS<br>1.5 SRR -ID = 250µA<br>1<br>fi tL ERS<br>0.5 SRR<br>0<br>-50 PTET -25 0 25 50 TET 75 100 125 y 150<br>TA, AMBIENT TEMPERATURE (°C)<br>Figure 7 Gate Threshold Variation vs. Ambient Temperature<br>10000<br>TA = 150°C<br>SS =<br>1000<br>— TA = 125°C<br>100 a TA = 85°C<br>10 — Se TA = 25°C<br>a<br>=<br>1<br>= 2===—=<br>0.1 ————ee ee ee<br>0 5 10 15 20 25 30<br>-VDS, DRAIN-SOURCE VOLTAGE (V)<br>, GATE THRESHOLD VOLTAGE (V)<br>V<br>GS(TH)<br>DSS<br>, LEAKAGE CURRENT (nA)<br>-I<br>**----- End of picture text -----**<br>


Figure 9 Typical Drain-Source Leakage Current vs. Voltage 

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10000<br>Ciss<br>1000<br>100<br>10<br>0 | 5 ft 10 15 ft ft 20 fy 25 30<br>-VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11 Typical Junction Capacitance<br>T<br>, JUNCTION CAPACITANCE (pF)<br>C<br>**----- End of picture text -----**<br>


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20<br>15<br>10 AE<br>TA= 150C<br>TA= 125C<br>5 EP TA= 85C TA= 25C<br>a<br>TA= -55C<br>0<br>0 0.2 0.4 LL) 0.6 fy] 0.8 1 1.2<br>-VSD, SOURCE-DRAIN VOLTAGE (V)<br>Figure 8 Diode Forward Voltage vs. Current<br>10<br>9<br>a<br>8<br>Pot |TY<br>7<br>6<br>a a<br>5 VIDDS= -7A= -15V<br>fe<br>4<br>Uf<br>3<br>pty|<br>2<br>eee<br>1<br>A<br>0<br>0 5 10 15 20 25<br>Qg, TOTAL GATE CHARGE (nC)<br>Figure 10 Gate-Charge Characteristics<br>100<br>R DS(on)<br>Limited<br>10<br>DC<br>1 PW = 10s<br>PW = 1s<br>PW = 100ms<br>PW = 10ms<br>P W  = 1ms<br>0.1 TJ(m ax) = 150°C P W  = 100µs<br>TA = 25°C<br>V GS  = 10V<br>Single Pulse<br>0.01 DUT on 1 * MRP Board<br>0.1 1 m0 10 100<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 12 SOA, Safe Operation Area<br>, SOURCE CURRENT (A)<br>-I<br>S<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>-V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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© Diodes Incorporated 

**DMP3028LK3** 

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1<br>Se D = 0.9<br>Er D = 0.7<br>by D = 0.5 Tee ee TTT<br>PTE D = 0.3 A aELEsere ae<br>0.1 UI [TA]<br>ee D = 0.1 acestfTee i [|] ee LTa| LE FINIelFUT<br>EP<br>ET D = 0.05 ATT<br>HT a<br>0.01 PATHEAa D = 0.02 EL TUTE ETE EE EE<br>PCa D  ae = 0.01  Aoe<br>aap),TA D = 0.005 amma ais tett(eT<br>| Rthjc(t) = r(t) * Rthjc |<br>Single Pulse R  = 4°C/W<br>thjc<br>Duty Cycle, D = t1/ t2<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10<br>t1, PULSE DURATION TIME (sec)<br>Figure 13 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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**DMP3028LK3** 

## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 

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E<br>A<br>b3<br>7°±1°<br>c<br>L3<br>a ioe<br>D<br>A2<br>H<br>L4<br>al<br>e<br>b(3x)<br>Jou b2(2x)<br>0.508<br>Gauge Plane<br>E1 D1 Seating Plane<br>L<br>A1<br>2.74REF<br>a<br>**----- End of picture text -----**<br>


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TO252 (DPAK)<br>Dim Min  Max  Typ<br>—— A  2.19 2.39 2.29<br>A1  0.00 0.13 0.08<br>A2  0.97  1.17  1.07<br>b  0.64  0.88 0.783<br>b2  0.76  1.14  0.95<br>b3  5.21  5.46  5.33<br>=== c  0.45  0.58 0.531<br>D  6.00  6.20  6.10<br>D1  5.21  -  -<br>e  -  -  2.286<br>E  6.45  6.70  6.58<br>=== E1  4.32  -  -<br>H  9.40 10.41  9.91<br>L  1.40 1.78 1.59<br>L3  0.88 1.27  1.08<br>L4  0.64  1.02  0.83<br>a  0°  10°  -<br>All Dimensions in mm<br>**----- End of picture text -----**<br>


**Suggested Pad Layout** 

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Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.<br>X1<br>Y1<br>CO;<br>Y2<br>_<br>C<br>Y<br>i<br>atk X<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value(in mm)**|
|---|---|
|**C**|4.572|
|**X**|1.060|
|**X1**|5.632|
|**Y**|2.600|
|**Y1**|5.700|
|**Y2**|10.700|



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**DMP3028LK3** 

## **IMPORTANT NOTICE** 

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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

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   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2014, Diodes Incorporated 

**www.diodes.com** 

7 of 7 **www.diodes.com** 

DMP3028LK3 Document Number DS37257 Rev. 2 - 2 

December 2014 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMP3028LK3-13/power-mosfet-p-channel-30-v-27-a-002-ohm-to-252)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmp3028lk3-13/mosfet-p-ch-30v-27a-to252/dp/3127361)
---

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