# Power MOSFET, P Channel, 30 V, 12 A, 0.0116 ohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:3943759/)

**URL**: https://novapart.co/products/DMP3020LSS-13/power-mosfet-p-channel-30-v-12-a-00116-ohm-soic
**SKU**: DMP3020LSS-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3950
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 12A |
| Drain Source On State Resistance | 0.0116ohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943759/)

& 

**DMP3020LSS** —— **SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**<br>-30V|**RDS(ON) max**|**ID max**<br>**TA = +25°C**|
||14mΩ @ VGS= -10V|-12.0A|
||25mΩ @ VGS= -4.5V|-8.5A|



## **Features** 

- Low On-Resistance 

- Low Gate Threshold Voltage 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Description** 

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

## **Applications** 

- Backlighting 

- Power Management Functions 

- DC-DC Converters 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Mechanical Data** 

- Case: SO-8 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity:  Level 1 per J-STD-020 

- Terminals Connections: See Diagram 

- Terminals: Finish - Matte Tin Annealed over Copper Lead Frame. Solderable per MIL-STD-202, Method 208 

- Weight: 0.074g (Approximate) 

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D<br>SO-8<br>S ma rim D<br>S D<br>G<br>S mn = D<br>4 TH TT (3<br>S oS G || | im D<br>S<br>Top View<br>Top View  Equivalent Circuit<br>Internal Schematic<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMP3020LSS-13|SO-8|2500/Tape & Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

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8 5<br>PTET ET<br>P3020LS<br>YY WW<br>PP} 1 LT LI 4<br>**----- End of picture text -----**<br>


5: = Manufacturer’s Marking P3020LS = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 16 = 2016) WW = Week (01 to 53) 

1 of 6 **www.diodes.com** 

DMP3020LSS Document number: DS31263 Rev. 12 - 2 

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## **DMP3020LSS** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

||||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage||VDSS|-30|V|
|Gate-Source Voltage||VGSS|25|V|
|Drain Current (Note 5)                                       Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-12<br>-9|A|
|Pulsed Drain Current(Note 6)||IDM|-80|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)|PD|2.5|W|
|Thermal Resistance,Junction to Ambient|RJA|50|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7)**|||||||
|Drain-Source Breakdown Voltage<br>~~a~~|BVDSS<br>~~a~~|-30<br>~~a~~|<br>~~a~~|<br>~~a~~|V<br>~~a~~|VGS= 0V,ID= -250μA<br>~~a~~|
|Zero Gate Voltage Drain Current<br>~~a~~|IDSS<br>~~a~~|<br>~~a~~|<br>~~a~~|-1<br>~~a~~|μA<br>~~a~~|VDS= -30V,VGS= 0V<br>~~a~~|
|Gate-Source Leakage<br>~~a~~|IGSS<br>~~a~~|<br>~~a~~|<br>~~a~~|100<br>~~a~~|nA<br>~~a~~|VGS=20V,VDS= 0V<br>~~a~~|
|||<br>~~a~~|<br>~~a~~|800<br>~~a~~||VGS=25V,VDS= 0V<br>~~a~~|
|**ON CHARACTERISTICS(Note 7)**|||||||
|Gate Threshold Voltage<br>~~a~~|VGS(TH)<br>~~a~~<br>~~a~~|-1<br>~~a~~|<br>~~a~~|-2<br>~~a~~|V<br>~~a~~|VDS= VGS,ID= -250μA<br>~~a~~|
|Static Drain-Source On-Resistance<br>~~a~~|RDS(ON)<br>~~a~~<br>~~a~~|<br><br>~~a~~|11.6<br>18.6<br>~~a~~|14<br>25<br>~~a~~|mΩ<br>~~a~~|VGS= -10V, ID= -8A<br>VGS= -4.5V,ID= -5A<br>~~a~~|
|Forward Transconductance<br>~~a~~|gfs<br>~~a~~<br>~~a~~|<br>~~a~~|12<br>~~a~~|<br>~~a~~|S<br>~~a~~|VDS= -10V,ID= -12A<br>~~a~~|
|Diode Forward Voltage(Note 7)|VSD|-0.5||-1.1|V|VGS= 0V,IS= -2A|
|**DYNAMIC CHARACTERISTICS**|||||||
|Input Capacitance<br>~~——~~|Ciss<br>~~——~~|<br>~~——~~|1802<br>~~——~~|<br>~~——~~|pF<br>~~——~~|VDS= -15V, VGS= 0V, f = 1.0MHz<br>~~——~~|
|Output Capacitance<br>~~——~~|Coss<br>~~——~~|<br>~~——~~|415<br>~~——~~|<br>~~——~~|pF<br>~~——~~||
|Reverse Transfer Capacitance<br>~~——~~|Crss<br>~~——~~|<br>~~——~~|295<br>~~——~~|<br>~~——~~|pF<br>~~——~~||
|Gate Resistance<br>~~——~~|RG<br>~~——~~<br>~~ae~~|<br>~~——~~|2.3<br>~~——~~|<br>~~——~~|Ω<br>~~——~~|VGS= 0V,VDS= 0V,f = 1MHz<br>~~——~~|
|**SWITCHING CHARACTERISTICS**<br>~~ae~~|||||||
|Total Gate Charge<br>~~ee~~|Qg<br>~~ee~~<br>~~ae~~|<br>~~ee~~|15.3<br>30.7<br>~~ee~~|<br>~~ee~~|nC<br>~~ee~~<br>~~ee~~|VDS= -15V, VGS= -4.5V, ID= -8A<br>VDS= -15V,VGS= -10V,ID= -8A<br>~~ee~~|
|Gate-Source Charge<br>~~ee~~|Qgs<br>~~ee~~<br>~~ae~~|<br>~~ee~~|3.5<br>~~ee~~|<br>~~ee~~||VDS= -15V,VGS= -10V,ID= -8A<br>~~ee~~|
|Gate-Drain Charge<br>~~ee~~<br>~~——_—~~|Qgd<br>~~ee~~<br>~~ae~~<br>~~——_—~~|<br>~~ee~~|7.9<br>~~ee~~|<br>~~ee~~||VDS= -15V,VGS= -10V,ID= -8A<br>~~ee~~<br>~~ee~~|
|Turn-On DelayTime<br>~~——_—~~|tD(ON)<br>~~ae~~<br>~~——_—~~||5.1||ns<br>~~ee~~|VGS= -10V, VDS= -15V,<br>RD= 15Ω, RG= 6Ω<br>~~ee~~|
|Rise Time<br>~~——_—~~|tR<br>~~——_—~~||8||||
|Turn-Off DelayTime<br>~~——_—~~|tD(OFF)<br>~~——_—~~||46||||
|Fall Time<br>~~——_—~~|tF<br>~~——_—~~||30||||



Notes: 5. Device mounted on 2 oz. copper pads on FR-4 PCB with RJA = 50°C/W. 

6. Pulse width 10μs, Duty Cycle 1%. 

7. Short duration pulse test used to minimize self-heating effect. 

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DMP3020LSS Document number: DS31263 Rev. 12 - 2 

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**DMP3020LSS** 

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20 20<br>VGS = -10V IPA V GS  = -3.5V eee eee<br>16 V GS  = -4.5V 16 V     = -5VDS<br>)<br>N [T] [(] [A]<br>12 Pi[évet ttt tt | 12 f f<br>ff V GS  = -3.0V C [URRE] ff<br>I [N]<br>8 8 T   = 150°CA<br>D [RA]<br>4a , D L l T   = 125°CA T   = 85°CA<br>- [I]<br>4 eaPitt TET 4 f ee e //1 T   = 25°CA<br>V GS  = -2.5V T   = -55°CA<br>VGS = -2.0V<br>0 pooMeL 0 ff neZZ<br>0 1 2 3 4 5 1 1.5 2 2.5 3 3.5<br>-VDS, DRAIN-SOURCE VOLTAGE (V) -V    , GATE-SOURCE VOLTAGE (V)GS<br>Fig. 1 Typical Output Characteristic Fig. 2 Typical Transfer Characteristic<br>0.03 ) 0.03<br>T   = 150°CA<br>T   = 125°CA<br>0.025 TLEELEELL 0.025 =<br>T   = 85°CA<br>0.02 0.02 T   = 25°CA<br>co VGS = -4.5V [RESISTANCE(] O [N-] B BR<br>0.015 0.015<br>TTT LLL “fT t ty<br>T   = -55°CA<br>0.01 ee VGS = -10V [SOURCE] 0.01 r T]<br>D [RAIN-]<br>0.005 TE EL EEL EL 0.005 | | | ly<br>,<br>O [N)]<br>[S(] D<br>0 ELLEELEEE R 0 || | ft| fl<br>0 6 12 18 24 30 0 6 12 18 24 30<br>-ID, DRAIN-SOURCE CURRENT (A) -I  , DRAIN CURRENT (A)D<br>Fig. 3  Typical On-Resistance  Fig. 4 Typical On-Resistance<br>vs. Drain Current and Gate Voltage  vs. Drain Current and Temperature<br>1.6 10,000<br>1.4 f = 1MHz<br>VGS = -10V<br>ID = -10A<br>1.2 4 ee<br>Ciss<br>VGS = -4.5V<br>ID = -5A 1,000<br>1.0 pA CDE<br>Coss<br>0.8 ATi) See Crss<br>0.6 100<br>-50 LIL -25 0 25 50 ELEL 75 100 125 150 0 —CLELL 5 10 15 20 25 30<br>TA, AMBIENT TEMPERATURE  ( 癈 oC ) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 5 Normalized On-Resistance vs. Ambient Temperature Fig. 6 Typical Total Capacitance<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>C, CAPACITANCE (pF)<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (NORMALIZED)<br>  DRA N CURRENT A<br>D<br>)<br><br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN CURRENT (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


3 of 6 **www.diodes.com** 

DMP3020LSS Document number: DS31263 Rev. 12 - 2 

June 2016 

© Diodes Incorporated 

**DMP3020LSS** | 

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2.4 20<br>)<br>( [V]<br>G [E] 2.0<br>16<br>O [LTA]<br>V 1.6 mT | Ty SEH=<br>O [LD] 12 TTAA = 25= 25 癈 ° C<br>H<br>S<br>1.2 I   = -250µAD<br>T [HRE] 8<br>T [E] 0.8 Ty PS ee<br>G [A]<br>, [)] H<br>T 0.4 4<br>G [S(]<br>- [V]<br>0 0<br>-50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1 1.2<br>T  , AMBIENT TEMPERATURE (°C)A -VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current<br>10 100<br>RLimitedDS(ON)  |SCREENTTT At ONT PW = 100µs LTTHH<br>8 me NR<br>10 LANKA NN<br>SNS<br>NS SESE<br>PaO NSE<br>TENSIONS NEE<br>6<br>DC<br>1 PAN SSS<br>PW = 10s —<br>4 PW = 1s }{TENRONCINE ONY[NST NENpot Ty<br>LET UN INS<br>VDS = -15V, ID = -8A  ANS eaePT<br>2 0.1 TTJ(Max) C = 25= 150 ℃ ℃ PW = 100ms DSOIN<br>Single Pulse PW = 10ms CNet<br>DUT on 1*MRP Board<br>VGS = -10V PW = 1ms<br>0.01 cH mall<br>0<br>0.1 1 10 100<br>0 5 10 15 20 25<br>Fig. 9 Gate ChargeQg (nC) VFig. 10 SOA, Safe Operation AreaDS, DRAIN-SOURCE VOLTAGE (V)<br>1 LSFe SS SS A A AeeOS Sr<br>DS D = 0.7<br>D = 0.5<br>ge a<br>D = 0.3 He A<br>eee Ee A<br>0.1 eee D = 0.1 aeen iecoeeeatecaelSee<br>Taee ee eS See D = 0.9 a a ee ee<br>CA D = 0.05 eeCr<br>He R JA (t) = r(t) * R JA LTT<br>ett D = 0.02  72 R JA  = 87 癈 oC/W/W LTT<br>0.01 LoeaetereaeRT0p D = 0.01 | UMeeSe UTI UII UTI eeeUT P(pk) t1 AAllEeeLT TTTeet<br>KT4 D = 0.005 EECCC Eeeeet tt }+—_+| t 2 LTCoo Tt<br>D = Single Pulse TJ - TA = P * RJA(t)<br>anime COUT Duty Cycle, D = t1/t2 mill<br>0.001<br>0.0001 0.001 0.01 0.1 1 10 100 1,000 10,000<br>t1, PULSE DURATION TIME (s)<br>Fig. 11 Transient Thermal Response Fig. 10 Transient Thermal Response<br>r(t), TRANSIENT THERMAL RESISTANCE<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>-V<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>, SOURCE CURRENT (A)<br>S<br>-I<br>**----- End of picture text -----**<br>


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DMP3020LSS Document number: DS31263 Rev. 12 - 2 

June 2016 © Diodes Incorporated 

**www.diodes.com** 

**DMP3020LSS** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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SO-8<br>**----- End of picture text -----**<br>


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SO-8<br>Dim  Min  Max<br>A  -  1.75<br>A1  0.10  0.20<br>A2  1.30  1.50<br>A3  0.15  0.25<br>b  0.3  0.5<br>D  4.85  4.95<br>E  5.90  6.10<br>E1  3.85 3.95<br>e  1.27 Typ<br>h  -  0.35<br>L  0.62  0.82<br> 0 8<br>All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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X<br>Toad<br>Dimensions Value (in mm)<br>X  0.60<br>C1 Y  1.55<br>C1  5.4<br>C2 C2  1.27<br>Y , |<br>**----- End of picture text -----**<br>


5 of 6 **www.diodes.com** 

DMP3020LSS Document number: DS31263 Rev. 12 - 2 

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**DMP3020LSS** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2016, Diodes Incorporated 

**www.diodes.com** 

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DMP3020LSS Document number: DS31263 Rev. 12 - 2 

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- [Supplier page](https://es.farnell.com/diodes-inc/dmp3020lss-13/mosfet-p-ch-30v-12a-soic/dp/3943759)
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