# Power MOSFET, P Channel, 30 V, 13 A, 9000 µohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:3943752/)

**URL**: https://novapart.co/products/DMP3015LSS-13/power-mosfet-p-channel-30-v-13-a-9000-ohm-soic
**SKU**: DMP3015LSS-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2770
**Stock**: 1000+
**Lead Time**: 162 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 13A |
| Drain Source On State Resistance | 9000µohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943752/)

**NOT RECOMMENDED FOR NEW DESIGN USE DMP3007LSS DMP3015LSS** ~~LO~~ OL 

## **SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

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ID max<br>V(BR)DSS RDS(ON) max<br>TA = +25°C<br>11mΩ @ VGS = -10V  -13A<br>-30V<br>17mΩ @ VGS = -4.5V  -9.9A<br>**----- End of picture text -----**<br>


## **Features and Benefits** 

- Low On-Resistance 

- Low Gate Threshold Voltage 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Description** 

This MOSFET is designed to minimize the on-state resistance (RDS(on)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. 

## **Mechanical Data** 

- Case: SO-8 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020D 

- Terminals Connections: See Diagram 

## **Applications** 

   - Terminals: Finish—Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

   - • Weight: 0.074g (Approximate) 

- Backlighting 

- Power Management Functions 

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•<br>D<br>SO-8 S D<br>S  D<br>S D  G<br>G D<br>Top View S<br>Top View  Equivalent Circuit<br>Internal Schematic<br>**----- End of picture text -----**<br>


- DC-DC Converters 

## **Ordering Information** (Note 4) 

Notes: 

**Part Number Case Packaging** DMP3015LSS-13 SO-8 2500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

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8 5 8 5<br>_<br>P3015LS P3015LS<br>YY WW YY WW<br>1 4 1 4<br>Oooo Dour<br>Chengdu A/T Site Shanghai A/T Site<br>**----- End of picture text -----**<br>


= Manufacturer’s Marking P3015LS = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 13 = 2013) WW = Week (01 - 53) 

YY = Date Code Marking for SAT (Shanghai Assembly/ Test site) YY = Date Code Marking for CAT (Chengdu Assembly/ Test site) 

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## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Units**|
|Drain-Source Voltage||VDSS|-30|V|
|Gate-Source Voltage||VGSS|±20|V|
|Drain Current (Note 5)                                       Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-13<br>-9.75|A|
|Pulsed Drain Current(Note 6)||IDM|-45|A|



## **Thermal Characteristics** 

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Characteristic  Symbol  Value  Unit<br>Total Power Dissipation (Note 5) PD 2.5  W<br>Thermal Resistance, Junction to Ambient  RϴJA 50  °C/W<br>Operating and Storage Temperature Range  TJ, TSTG -55 to +150  °C<br>Notes:  5. Device mounted on 2 oz. copper pads on FR-4 PCB with RϴJA = 50°C/W.<br>6. Pulse width ≤10μs, duty cycle ≤1%.<br>Electrical Characteristics (@TA = +25°C, unless otherwise specified.)<br>Characteristic  Symbol  Min  Typ Max  Unit  Test Condition<br>OFF CHARACTERISTICS (Note 7)<br>Drain-Source Breakdown Voltage  BVDSS -30  —  —  V  VGS = 0V, ID = -250μA<br>Zero Gate Voltage Drain Current  IDSS —  —  -1  µA  VDS = -30V, VGS = 0V<br>Gate-Source Leakage  IGSS —  —  ±100  nA  VGS = ±20V, VDS = 0V<br>ON CHARACTERISTICS (Note 7)<br>Gate Threshold Voltage  VGS(th) -1  —  -2  V  VDS = VGS, ID = -250μA<br>Static Drain-Source On-Resistance  RDS (ON) —14 — 9  11 17  mΩ  VVGSGS = -10V, I = -4.5V, IDD = -13A  = -10A<br>Forward Transconductance  gfs —  15  —  S  VDS = -15V, ID = -8A<br>Diode Forward Voltage (Note 7) VSD -0.5  —  -1.1  V  VGS = 0V, IS = -2.1A<br>DYNAMIC CHARACTERISTICS (Note 8)<br>Input Capacitance  Ciss —  2748  —  pF<br>Output Capacitance  Coss —  357  —  pF  VDS = -20V, VGS = 0V<br>f = 1.0MHz<br>Reverse Transfer Capacitance  Crss —  356  —  pF<br>es eeee<br>x Gate Resistance  Aly! RG —  | 2.0  ff —  | Ω  Vf = 1.DS = 0V, V0MHz  GS = 0V<br>SWITCHING CHARACTERISTICS (Note 8)<br>—  30.0  —  VDS = -10V, VGS = -4.5V, ID = -13A<br>Total Gate Charge  Qg —  60.4  —  nC  VDS = -10V, VGS = -10V, ID = -13A<br>Gate-Source Charge  Qgs —  7.2  —  VDS = -10V, VGS = -10V, ID = -13A<br>eee Gate-Drain Charge  Qgd —  16.4  —  VDS = -10V, VGS = -10V, ID = -13A<br>Turn-On Delay Time  td(on) —  11.2  —<br>Rise Time  tr —  12.4  —  VDS = -15V, VGS = -10V,<br>ns<br>Turn-Off Delay Time  td(off) —  104.9  —  ID = -1A, RG = 6.0Ω<br>Fall Time  tf —  61.7  —<br>———— ee<br>Notes:  7. Short duration pulse test used to minimize self-heating effect.<br>8. Guaranteed by design. Not subject to product testing.<br>**----- End of picture text -----**<br>


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20.0<br>ID(A) @ VGS = 10V V DS  = -5.0V<br>Me 30 eee in<br>16.0  Tm ID(A) @ VGS = 4.5V 26 eeoe<br>1 ID(A) @ VGS = 4.0V<br>12.0  | ID(A) @ VGS = 3.5V ID(A) @ VGS = 3.0V<br>IL a<br>WA a e o fT<br>8.0<br>i Bwz2 || {|I| T A  = 85 | °C | mf | |<br>T A  = 125°C<br>4.0  | ee) T A  = 25°C<br>po ID(A) @ VGS = 2.5V 5 TA = 150 ° C aaf TA = -55°C<br>0.0  Za oL_|| ty.<br>0 0.5 1 1.5 2 2.5 3 0 0 . 5 4 1 15 Zn 2 2 . 5 3 3.5 4<br>VDS, DRAIN-SOURCE VOLTAGE (V) - V gsnGA T E-SOURCE VOLTAGE (V)<br>Fig.1 Typical Output Characteristics Figh2 Typical TransfemGharactetistics<br>TA = 150°C<br>TA = 125°C<br>See —— — | —<br>WN A+ A TA = 85°C<br>VGS = -4.5V<br>BURR RRRSSEEE Bee ————— TA = 25°C<br>o p EEE LEI ASBA<br>rs<br>D VGS = -10V o 2 TA = -55°C<br>&<br>e<br>FLL @ Mee<br>VGS = -4.5V<br>0 5 40 15 20 25 30 0 5 10 15 20 25 = 30<br>- Ip, DRAIN SOURCE CURRENT (A) “Ip, DRAIN - SSOURCE CURRENT(A)<br>Fig . 3 On -R esistanee vs . Drain Currentp&,Gate Voltage Fig . 4 On -R esistance vs . Drain Current & Gate<br>10,000<br>f = 1MHz<br>e s|e ee<br>PZQSEa0 == Ciss<br>14 ee ee<br>x ee<br>' 4 ee ee eee<br>fF<br>We NR<br>1,000<br>VGS = -4.5V C oss<br>I D  = -5A<br>1 \Y [7 a N eea eeee eeeeee eee|<br>| | C ee rss a<br>eae VGS = -10V —————<br>ID = -10A<br>Cha LEE TTT<br>100<br>, - 50 - 25 0 25 50 75 100 125 150 0 ef 5 10 tt 15 | 20 25 30<br>Fig.T,,5 AMBIENTStatic Drai TEMPERATURE n- Source On -R esistance(°C) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 6 Typical Total Capacitance<br>, DRAIN CURRENT (A)<br>ID<br>)Ω<br>, STATIC DRAIN-SOURCE<br>ON-RESISTANCE ( C, CAPACITANCE (pF)<br>DSON<br>R<br>**----- End of picture text -----**<br>


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VGS = 0V<br>2 mE<br>re ~~i ID = -250mA 2”<a<br>1.2 | ELSSESNON Z se, a 3 | | [| [ | |<br>ID = -1mA N wf | | | f | |<br>08 a |<br>3s | | | lah<br>et TAAL)<br>BERR 2)<br>" | I<br>nn 2! A<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(th)<br>-V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
rs) Ett D = 0.7 Ee rt ol et eC<br>D = 0.5<br>> FPR eee TTT me<br>< pe Ae ETT<br>D D = 0.3 TI D = 0.9 TE ATES STITT<br>TA = 85°C<br>g Ua aTTI<br>id 0.1  tt A Lol ETI LL<br><xQOS PaaSS D = 0.1 SSes eeae7, Age|eeeSe eee<br>fa Pt Trt TT TT Oa A SST TTT oe FT TTT<br>D = 0.05<br>Ww eI TT Lae Pt Tt HTH<br>FE PTAT RθJA(t) = r(t) * RθJA<br>Soot D = 0.02 TE LAP RθJA = 91°C/W 1|<br>TTD e y efcenaIITSN | PN MLHt}<br>z Fe D = 0.01 P(pk) t 1 ee<br>ow ete et a<br>Zz- SOPT D = 0.005 TTTaECe TTTSRR ssTTT TT t2 | afap<br>S ISeee | LPPaSFT ToMe TETTTT T J - T ie A  = P * a  R θJA (t) OL1|<br>D = Single Pulse Duty Cycle, D = t1/t2<br>ooot | aerom NOLLIAE LULA Jet TIT LLL<br>**----- End of picture text -----**<br>


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## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**==> picture [505 x 518] intentionally omitted <==**

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SO-8<br>SO-8<br>E oT Dim  Min  Max  Typ<br>A  1.40 1.50 1.45<br>A1  0.10  0.20  0.15<br>1<br>b  0.30  0.50  0.40<br>c  0.15  0.25  0.20<br>D  4.85  4.95  4.90<br>E  5.90  6.10  6.00<br>b<br>E1 E1  3.80  3.90  3.85<br>h E0  3.85  3.95  3.90<br>Q e  --  --  1.27<br>7° h  -  --  0.35<br>c L   0.62  0.82  0.72<br>A 4°±3° Q 0.60 0.70 0.65<br>G auge Plane All Dimensions in mm<br>S eating Plane<br>L<br>e A1 E0<br>D<br>Suggested Pad Layout ggested Pad Layout ested Pad Layout yout out<br>Please see http://www.diodes.com/package-outlines.html for the latest version.<br>SO-8<br>X1<br>Dimensions Value (in mm)<br>Aaa C  1.27<br>Y1 X  0.802<br>X1  4.612<br>Y  1.505<br>Y1  6.50<br>Y<br>‘ etrtic C X pe<br>All sides)<br>9° (<br>R 0.1<br>45°<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout ggested Pad Layout ested Pad Layout yout out** 

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## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the 

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or & indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** we Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: WD A.   Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. NE B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related Os information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2018, Diodes Incorporated **www.diodes.com** cw 

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---

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