# Power MOSFET, P Channel, 30 V, 36 A, 5700 µohm, PowerDI 5060, Surface Mount

![Product image](https://novapart.co/image/farnell:3943749/)

**URL**: https://novapart.co/products/DMP3010LPSQ-13/power-mosfet-p-channel-30-v-36-a-5700-ohm-powerdi
**SKU**: DMP3010LPSQ-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2860
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 1.26W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PowerDI 5060 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 36A |
| Drain Source On State Resistance | 5700µohm |
| Gate Source Threshold Voltage Max | 1.6V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943749/)

**DMP3010LPSQ P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI** 

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## **Product Summary** 

|**V(BR)DSS**|**RDS(ON)**|**ID **<br>**TA = +25°C**|
|---|---|---|
|-30V|7.5mΩ@VGS= -10V|-36A|
||10mΩ@VGS= -4.5V|-31A|



## **Features** 

- Thermally Efficient Package – Cooler Running Applications 

- High Conversion Efficiency 

- Low RDS(ON) – Minimizes On-State Losses 

- Low Input Capacitance 

- Fast Switching Speed 

## **Description** 

This new generation 30V P-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance. This device is ideal for use in notebook battery power management and loadswitch. 

- <1.1mm Package Profile – Ideal for Thin Applications 

- ESD HBM Protected up to 1kV 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **PPAP Available (Note 4)** 

## **Applications** 

- Notebook Battery Power Management 

- DC-DC Converters 

- Loadswitch 

## **Mechanical Data** 

- Case: PowerDI[®] 5060-8 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal Connections: See Diagram Below 

- Terminals: Finish – 100% Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

- Weight: 0.097 grams (Approximate) 

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PowerDI5060-8<br>Pin1<br>Top View  Bottom View<br>**----- End of picture text -----**<br>


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## **Ordering Information** (Note 5) 

|**Ordering Informationg Information Information** (Note 5)|(Note 5)|||
|---|---|---|---|
|**Part Number**|**Qualification**|**Case**|**Packaging**|
|DMP3010LPSQ-13|Automotive|PowerDI5060-8|2,500/Tape & Reel|



- Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/quality/product_compliance_definitions/. 

   5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

_PowerDI is a registered trademark of Diodes Incorporated._ 

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## **Marking Information** 

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PowerDI5060-8<br>D D D D<br>      = Manufacturer’s Marking<br>P3010LS = Product Type Marking Code<br>YYWW = Date Code Marking<br>P3010LS<br>YY = Year (ex: 15 = 2015)<br>WW = Week (01 - 53)<br>YY WW<br>S S S G<br>**----- End of picture text -----**<br>


**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|-30|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (Note 8) VGS= 10V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-36<br>-29|A|
|Continuous Drain Current (Note 8) VGS= 4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-31<br>-25|A|
|Continuous Drain Current (Note 7) VGS= 10V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-14.5<br>-11.5|A|
|Pulsed Drain Current(Notes 7 & 10)|||IDM|-100|A|
|Avalanche Current(Notes 11 & 12)|||IAS|-17.5|A|
|Avalanche Energy (Notes 11 & 12)L = 1mH|||EAS|153|mJ|



## **Thermal Characteristics** 

|**Thermal Characteristics**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Power Dissipation(Note 6)|PD|1.26|W|
|Thermal Resistance,Junction to Ambient@TA= +25°C(Note 6)|RθJA|97|°C/W|
|Power Dissipation(Note 7)|PD|2.18|W|
|Thermal Resistance,Junction to Ambient@TA= +25°C(Note 7)|RθJA|55|°C/W|
|Power Dissipation(Note 8)|PD|14.37|W|
|Thermal Resistance,Junction to Ambient@TA= +25°C(Note 8)|RθJA|8.7|°C/W|
|Power Dissipation(Notes 8 & 9)|PD|58.7|W|
|Thermal Resistance,Junction to Case@TC= +25°C(Notes 8 & 9)|RθJC|2.13|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



- Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 

   7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 

   8. Device mounted on FR-4 PCB with infinite heatsink. 

   9. RθJC is guaranteed by design while RθCA is determined by the user’s board design. 

   10. Repetitive rating, pulse width limited by junction temperature, 10µs pulse, duty cycle = 1%. 

   11. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 

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**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~OO~~|**Symbol**<br>|**Min**<br>|**Typ**<br>|**Max**<br>|**Unit**<br>|**Test Condition**<br>|
|**OFF CHARACTERISTICS**(Note 12)<br>~~OO~~|||||||
|Drain-Source Breakdown Voltage<br>~~OO~~|BVDSS<br>|-30<br>|—<br>|—<br>|V<br>|VGS= 0V,ID= -250µA<br>|
|Zero Gate Voltage Drain Current<br>~~OOa~~|IDSS<br>~~a~~|—<br>~~a~~|—<br>~~a~~|-1<br>~~a~~|μA<br>~~a~~|VDS= -30V,VGS= 0V<br>~~a~~|
|Gate-Source Leakage<br>~~a~~|IGSS<br>~~a~~|—<br>~~a~~|—<br>~~a~~|±100<br>~~a~~|nA<br>~~a~~|VGS= ±20V,VDS= 0V<br>~~a~~|
|**ON CHARACTERISTICS**(Note 12)<br>~~(OO~~|||||||
|Gate Threshold Voltage<br>~~DO~~|VGS(th)<br>~~DO~~|-1.1<br>~~DO~~|-1.6<br>~~DO~~|-2.1<br>~~DO~~<br>~~(OO~~|V<br>~~DO~~<br>~~(OO~~|VDS= VGS,ID= -250µA<br>~~DO~~|
|Static Drain-Source On-Resistance<br>~~pr~~|RDS(ON)<br>~~pr~~|—<br>~~pr~~|5.7<br>~~pr~~|7.5<br>~~(OO~~<br>~~pr~~|mΩ<br>~~(OO~~<br>~~pr~~|VGS= -10V,ID= -10A<br>~~pr~~|
|||—<br>~~pr~~|7.2<br>~~pr~~|10<br>~~pr~~||VGS= -4.5V,ID= -10A<br>~~pr~~|
|Forward Transfer Admittance<br>~~pr~~||Yfs|<br>~~pr~~|—<br>~~pr~~|30<br>~~pr~~<br>~~ff~~|—<br>~~pr~~<br>~~ff~~|S<br>~~pr~~<br>~~ff~~|VDS= -15V,ID= -10A<br>~~pr~~|
|Diode Forward Voltage<br>~~Ce~~|VSD<br>~~Ce~~|—<br>~~Ce~~|-0.65<br>~~Ce~~<br>~~ff~~|-1<br>~~Ce~~<br>~~ff~~|V<br>~~Ce~~<br>~~ff~~|VGS= 0V,IS= -1A<br>~~Ce~~|
|**DYNAMIC CHARACTERISTICS**(Note 13)<br>~~ff~~|||||||
|Input Capacitance<br>~~|~~<br>~~———~~|Ciss<br>~~———~~|—<br>~~———~~|6,234<br>~~———~~|—<br>~~———~~|pF<br>~~———~~|VDS= 15V, VGS= 0V,<br>f = 1MHz<br>~~———~~|
|Output Capacitance<br>~~———~~|Coss<br>~~———~~|—<br>~~———~~|1,500<br>~~———~~|—<br>~~———~~|pF<br>~~———~~||
|Reverse Transfer Capacitance<br>~~———~~|Crss<br>~~———~~|—<br>~~———~~|774<br>~~———~~|—<br>~~———~~|pF<br>~~———~~||
|Gate Resistance<br>~~———~~|Rg<br>~~———~~|—<br>~~———~~|1.28<br>~~———~~|—<br>~~———~~|Ω<br>~~———~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~———~~|
|Total Gate Charge(VGS= -10V)|Qg|—|126.2|—|nC|VDS= -15V,ID= -10A|
|Total Gate Charge(VGS= -4.5V)<br>~~eee~~|Qg<br>~~eee~~|—<br>~~eee~~|59.2<br>~~eee~~|—<br>~~eee~~|nC<br>~~eee~~|VDS= -15V, VGS= -4.5V,<br>ID= -10A<br>~~eee~~<br>~~re~~|
|Gate-Source Charge<br>~~eee~~<br>~~**——**—~~|Qgs<br>~~eee~~|—<br>~~eee~~|16.1<br>~~eee~~<br>~~re~~|—<br>~~eee~~<br>~~re~~|nC<br>~~eee~~<br>~~re~~||
|Gate-Drain Charge<br>~~eee~~<br>~~**——**—~~|Qgd<br>~~eee~~|—<br>~~eee~~|15.7<br>~~eee~~<br>~~re~~|—<br>~~eee~~<br>~~re~~|nC<br>~~eee~~<br>~~re~~||
|Turn-On DelayTime<br>~~**——**—~~<br>~~——~~|tD(on)|—|11.4<br>~~re~~|—<br>~~re~~|ns<br>~~re~~|VDS= -15V, VGEN= -10V,<br>RG= 6Ω, ID= -1A<br>~~re~~|
|Turn-On Rise Time<br>~~**——**—~~<br>~~——~~|tr|—|9.4<br>~~re~~|—<br>~~re~~|ns<br>~~re~~||
|Turn-Off DelayTime<br>~~**——**—~~<br>~~——~~|tD(off)|—|260.7<br>~~re~~|—<br>~~re~~|ns<br>~~re~~||
|Turn-Off Fall Time<br>~~**——**—~~<br>~~——~~|tf|—|99.3<br>~~re~~|—<br>~~re~~|ns<br>~~re~~||



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30 30<br>VGS = -10V<br>25 | V GS  = -4.5V Se 25 V DS  = -5V Sane<br>VGS = -5.0V<br>20 V GS  = -3.5V 20<br>VGS = -3.0V<br>15 Botees VGS = -2.5V 15 fe<br>10 Vo 10<br>TA = 150°C<br>5 5 TA = 125 ° C T A  = 85°C<br>TA = 25°C<br>0 P VGS = -2.0V o o 0 EF TA = -55°C<br>0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 1.5 2 2.5 3<br>-VDS, DRAIN-SOURCE VOLTAGE (V) -VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 1 Typical Output Characteristic Fig. 2  Typical Transfer Characteristic<br>0.020 0.016<br>0.014 V GS  = -4.5V<br>0.016<br>0.012<br>0.010 TA = 150°C<br>0.012<br>TA = 125°C<br>0.008 — TA = 85°C<br>0.008 0.006 —j TA = 25°C<br>VGS = -4.5V TA = -55°C<br>0.004 eeePeee ee<br>0.004 V GS  = -10V<br>0.002 Ft | ft ft ft<br>0 0 EEE 5 10 15 20 25 30 00 Fta 5 10 | ft 15 20 ft ft 25 30<br>-ID, DRAIN-SOURCE CURRENT (A) -ID, DRAIN CURRENT (A)<br>Fig. 3  Typical On-Resistance  Fig. 4 Typical On-Resistance<br>vs. Drain Current and Gate Voltage  vs. Drain Current and Temperature<br>1.6 0.020<br>1.4 0.016<br>BERR<br>1.2 LLL ee. 0.012<br>1.0 V GS  = -10V 0.008 VIGSD = -10A = -4.5V<br>ID = -20A<br>0.8 o V GS  = -4.5V o 0.004 V GS  = -10V<br>ID = -10A ID = -20A<br>0.6 AnELL 0<br>PLE EL<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)<br>Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature<br>)<br>,  DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN-SOURCE<br>DSON<br>R<br>ON-RESISTANCE (NORMALIZED)<br>, DRAIN CURRENT (A)<br>D<br>-I<br>D<br>, DRAIN CURRENT (A)<br>-I<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br>DSON<br>**----- End of picture text -----**<br>


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2.5<br>2.0<br>—<br>1.5 SLEPT} ID = -1mA<br>ID = -250µA<br>1.0 oS:<br>=<br>0.5<br>EERRREED<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE (°C)<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature<br>10,000 —————<br>a A a ee<br>eeCSET| C | iss  Seers es<br>\ E><br>Coss<br>AWLP EREE<br>1,000<br>a a<br>Crss<br>ee<br>SERRE RSS<br>100 f = 1MHz To<br>0 4 8 12 16 20<br>-VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 9 Typical Total Capacitance<br>10<br>8 V DS  = -15V ave<br>ID = -10A<br>4<br>6<br>4<br>4<br>2<br>0<br>0 20 40 60 80 100 120 140<br>Qg, OTAL GATE CHARGE [T] (nC)<br>Fig. 11 Gate-Source Voltage vs. Total Gate Charge<br>T<br>, JUNCTION CAPACITANCE (pF)<br>C<br>, ATE-SOURCE VOLTAGE (V)<br>-V<br>G<br>GS<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>-V<br>**----- End of picture text -----**<br>


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30<br>25<br>20<br>Ee<br>15 TA = 25 ° C<br>10 ELE PL<br>5 aan<br>0<br>0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>-VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 8 Diode Forward Voltage vs. Current<br>100,000 ==<br>a |<br>a<br>10,000 a TA = 150°C<br>es<br>1,000 TA = 125°C<br>===<br>a a Ge<br>100 TA = 85°C<br>jf | ee<br>ceeSSSCG<br>es<br>10<br>1 ===ee T A  = 25°C<br>0 5 10 15 20 25 30<br>-VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 10 Typical Leakage Current vs. Drain-Source Voltage<br>100<br>RDS(on)<br>Limited<br>UReit NT TNENAR<br>NT<br>Pe SSNS SS<br>10<br>DC SOATESTSEE EET<br>POEYINNIISCOIN PW = 10s TE PANETE<br>1<br>PW = 1s<br>P W  = 100ms<br>0.1 SE TJ(max) = 150 SRN ° C PW = 10ms NY ttt<br>TA = 25°C PW = 1ms<br>V GS  = -10V<br>Single Pulse Oeee<br>0.01 DUT on 1 * MRP Board SEll<br>0.1 1 10 100<br>-VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig.  12 SOA, Safe Operation Area<br>, DRAIN CURRENT (A)<br>D<br>-I<br>, SOURCE CURRENT (A)<br>S<br>-I<br>, LEAKAGE CURRENT (nA)<br>DSS<br>-I<br>**----- End of picture text -----**<br>


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1<br>SSS SSS<br>SST D = 0.7 Se<br>D = 0.5<br>gE0<br>D = 0.3<br>FHT NCE ITT<br>0.1 eee:ee MIIMOTE ll<br>boSE D = 0.1<br>_——— D = 0.9<br>D = 0.05<br>AZa<br>D = 0.02<br>ee I I SH<br>0.01 ——__--_—A D = 0.01 rl LIL| eeeLI DUT mounted on FRminimum recommended -4 PCB with pad layout  |HH<br>PE D = 0.005 RJA(t) = r(t) * RJA mn<br>a ee RJA = 97°C/W iH<br>D = Single Pulse Duty Cycle, D = t1/t2<br>0.001<br>0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (s)<br>Fig. 13 Transient Thermal Response<br>, TRANSIENT THERMAL RESISTANCE<br>(T)<br>R<br>**----- End of picture text -----**<br>


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## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 

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PowerDI5060-8<br>**----- End of picture text -----**<br>


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PowerDI5060-8<br>D Dim  Min  Max  Typ<br>D1 Detail A A  0.90 1.10 1.00<br>0 (4X) A1  0.00  0.05  <br>b  0.33 0.51  0.41<br>c b2  0.200 0.350 0.273<br>A1 b3 0.40 0.80 0.60<br>c  0.230 0.330 0.277<br>E1 E<br>D  5.15 BSC<br>e D1  4.70 5.10 4.90<br>i ot ==== D2  3.70 4.10 3.90<br>1 0 1 (4X) DE 3 3.90 6.14.5 B30SC 4.10<br>E1  5.60 6.00 5.80<br>b (8X) e/2 E2  3.28 3.68 3.48<br>1 E3  3.99 4.39 4.19<br>L b2 (4X) e  1.27 BSC<br>D3 K G 0.51  0.71  0.61<br>a K  0.51  <br>L  0.51  0.71  0.61<br>A E3 E2 D2 b3 (4X) L1  0.100 0.200 0.175<br>M<br>M  3.235 4.035 3.635<br>St Detail A Raed M1 ———— M1  1.00 1.40 1.21<br>Θ  10°  12°  11°<br>G oe L1 =———— Θ1  6°  8°  7°<br>All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

## **PowerDI5060-8** 

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X4<br>Y2<br>To X3<br>Y3 Y1<br>ips<br>X2<br>Y5 I - |<br>Y4 X1<br>Y7<br>C G1<br>Y6<br>4 =<br>Y(4x)<br>O00 X G<br>0<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value(in mm)**|
|---|---|
|**C**|1.270|
|**G**<br>**G1**|0.660|
|**G1**|0.820|
|**X**|0.610|
|**X1**|4.100|
|**X2**|0.755|
|**X3**|4.420|
|**X4**|5.610|
|**Y**|1.270|
|**Y1**|0.600|
|**Y2**|1.020|
|**Y3**|0.295|
|**Y4**|1.825|
|**Y5**|3.810|
|**Y6**|0.180|
|**Y7**|6.610|



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## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2015, Diodes Incorporated 

**www.diodes.com** 

8 of 8 **www.diodes.com** 

DMP3010LPSQ Document number: DS36683 Rev. 5 - 2 

November 2015 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMP3010LPSQ-13/power-mosfet-p-channel-30-v-36-a-5700-ohm-powerdi)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmp3010lpsq-13/mosfet-p-ch-30v-36a-powerdi-5060/dp/3943749)
---

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