# Power MOSFET, P Channel, 30 V, 17 A, 6500 µohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:3127360/)

**URL**: https://novapart.co/products/DMP3010LK3Q-13/power-mosfet-p-channel-30-v-17-a-6500-ohm-to-252
**SKU**: DMP3010LK3Q-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3160
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-17A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0065ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 3.4W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 17A |
| Drain Source On State Resistance | 6500µohm |
| Gate Source Threshold Voltage Max | 1.6V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3127360/)

**NOT RECOMMENDED FOR NEW DESIGN USE DMP3007LK3 Green DMP3010LK3** ~~=~~ **P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**V(BR)DSS**|**RDS(on) max**|**ID**<br>**TA = +25°C**|
|-30V|8mΩ@VGS= -10V|-17A|
||10.2mΩ@VGS= -4.5V|-14.5A|



## **Features and Benefits** 

- Low Input Capacitance 

- Low On-Resistance 

- Fast Switching Speed 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Description** 

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

## **Mechanical Data** 

- Case: TO252 (DPAK) 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal Connections: See Diagram 

## **Applications** 

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• Terminals: Finish—Tin Finish annealed over Copper Leadframe.<br>Solderable per MIL-STD-202, Method 208  > e3<br>• Weight: 0.33 grams (approximate)<br>D D<br>TO252<br>G<br>D<br>Top View  G S S<br>Top View<br>Pin-Out  Equivalent Circuit<br>**----- End of picture text -----**<br>


- DC-DC Converters 

- Power Management Functions 

- Backlighting 

## **Ordering Information** (Note 4 & 5) 

|**Ordering Informationg Information Information** (Note 4 & 5)|**Ordering Informationg Information Information** (Note 4 & 5)|**Ordering Informationg Information Information** (Note 4 & 5)|**Ordering Informationg Information Information** (Note 4 & 5)|
|---|---|---|---|
|||||
|**Part Number**|**Compliance**|**Case**|**Packaging**|
|DMP3010LK3-13|Standard|TO252|2500/Tape & Reel|
|DMP3010LK3Q-13|Automotive|TO252|2500/Tape &Reel|



- Notes: 

1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. Automotive products are AEC-Q10x qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to https://www.diodes.com/quality/. 

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html 

## **Marking Information** 

1 of 7 **www.diodes.com** 

DMP3010LK3 Document number: DS35716 Rev. 6 - 3 

December 2018 © Diodes Incorporated 

**DMP3010LK3** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Characteristic**<br>**Symbol**<br>**Value**<br>**Units**<br>Drain-Source Voltage<br>VDSS<br>-30<br>V<br>Gate-Source Voltage<br>VGSS<br>±20<br>V<br>Continuous Drain Current (Note 7) VGS= -10V<br>Steady<br>State<br>TA= +25°C<br>TA= +70°C<br>ID<br>-17.0<br>-13.0<br>A<br>t<10s<br>TA= +25°C<br>TA= +70°C<br>ID<br>-27.0<br>-21.0<br>A<br>~~——ee~~|
|---|
|Continuous Drain Current (Note 7) VGS= -4.5V<br>Steady<br>State<br>TA= +25°C<br>TA= +70°C<br>ID<br>-14.5<br>-11.5<br>A<br>t<10s<br>TA= +25°C<br>TA= +70°C<br>ID<br>-23.0<br>-18.0<br>A<br>Pulsed Drain Current(10µspulse,dutycycle = 1%)<br>IDM<br>-100<br>A<br>Maximum BodyDiode Forward Current(Note 7)<br>IS<br>5.5<br>A<br>~~OE~~<br>~~eesO~~<br>~~ee~~|
|Avalanche Current(Note 8)<br>IAS<br>47<br>A<br>Avalanche Energy (Note 8)<br>EAS<br>113<br>mJ<br>~~a~~|
||
|**Thermal Characteristics **(@TA= +25°C, unless otherwise specified.)|
||
|**Characteristic**<br>**Symbol**<br>**Value**<br>**Units**|
|Total Power Dissipation(Note 6)<br>PD<br>1.7<br>W|
|Thermal Resistance, Junction to Ambient (Note 6)<br>Steadystate<br>RθJA<br>72<br>°C/W<br>t<10s<br>29<br>°C/W|
|Total Power Dissipation(Note 7)<br>PD<br>3.4<br>W|
|Thermal Resistance, Junction to Ambient (Note 7)<br>Steady state<br>RθJA<br>37<br>°C/W<br>t<10s<br>15<br>°C/W|
|Operatingand Storage Temperature Range<br>TJ,TSTG<br>-55 to +150<br>°C|



**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~——SS~~|**Symbol**<br>~~i~~|**Min**<br>~~i~~|**Typ**<br>~~i~~|**Max**<br>~~i~~|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 9)**<br>~~——SSi~~|||||||
|Drain-Source Breakdown Voltage<br>~~——SS~~|BVDSS<br>~~i~~|-30<br>~~i~~|—<br>~~i~~|—<br>~~i~~|V|VGS= 0V,ID= -250µA|
|Zero Gate Voltage Drain Current<br>~~——SS~~|IDSS<br>~~i~~|—<br>~~i~~|—<br>~~i~~|-1<br>~~i~~|µA|VDS= -30V,VGS= 0V|
|Gate-Source Leakage<br>~~—— SS ~~|IGSS<br> ~~i~~|—<br>~~i~~|—<br>~~i~~|±100<br>~~i~~|nA|VGS=±20V,VDS= 0V|
|**ON CHARACTERISTICS(Note 9)**<br>~~AN OLS~~|||||||
|Gate Threshold Voltage<br>~~AN OLS~~|VGS(th)<br>~~OLS~~|-1.1<br>~~OLS~~|-1.6<br>~~OLS~~|-2.1<br>~~OLS~~|V<br>~~OLS~~|VDS= VGS,ID= -250µA<br>~~OLS~~|
|Static Drain-Source On-Resistance<br>~~AN OLS~~|RDS (ON)<br>~~OLS~~|—<br>~~OLS~~|6.5<br>~~OLS~~|8<br>~~OLS~~|mΩ<br>~~OLS~~|VGS= -10V,ID= -10A<br>~~OLS~~|
|||—<br>~~OLS~~|7.2<br>~~OLS~~|10.2<br>~~OLS~~||VGS= -4.5V,ID=  -10A<br>~~OLS~~|
|Forward Transfer Admittance<br>~~AN OLS~~<br>~~|ey~~<br>~~7~~<br>~~gf~~<br>~~wept~~||Yfs|<br>~~OLS~~<br>~~wept~~<br>~~|~~|—<br>~~OLS~~<br>~~ft~~|30<br>~~OLS~~<br>~~ft~~|—<br>~~OLS~~<br>|S<br>~~OLS~~<br>|VDS= -15V,ID= -10A<br>~~OLS~~<br>|
|Diode Forward Voltage<br>~~AN OLS~~<br>~~|ey~~<br>~~7~~<br>~~gf~~<br>~~wept~~|VSD<br>~~OLS~~<br>~~wept~~<br>~~|~~|—<br>~~OLS~~<br>~~ft~~|-0.65<br>~~OLS~~<br>~~ftff~~|-1.0<br>~~OLS~~<br>~~ff~~|V<br>~~OLS~~<br>~~ff~~|VGS= 0V,IS= -1A<br>~~OLS~~<br>~~ff~~|
|**DYNAMIC CHARACTERISTICS(Note 10)**<br>~~| ey~~<br>~~7~~<br>~~gf~~<br>~~wept~~<br>~~|~~<br>~~ft~~<br>~~SSS~~<br>~~Eeeee~~|||||||
|Input Capacitance<br>~~SSS~~<br>~~Ee~~|Ciss<br>~~eee~~|—<br>~~eee~~|6234<br>~~eee~~|—<br>~~eee~~|pF<br>~~eee~~|VDS= 15V, VGS= 0V<br>f = 1.0MHz<br>~~eee~~|
|Output Capacitance<br>~~SSS~~<br>~~Ee~~|Coss<br>~~eee~~|—<br>~~eee~~|1500<br>~~eee~~|—<br>~~eee~~|||
|Reverse Transfer Capacitance<br>~~SSS~~<br>~~Ee~~|Crss<br>~~eee~~|—<br>~~eee~~|774<br>~~eee~~|—<br>~~eee~~|||
|Gate Resistance<br>~~SSS~~<br>~~Ee ~~<br>~~——_—$———————_——_—_~~|RG<br> ~~eee~~<br>~~——_—$———————_——_—_~~|—<br>~~eee~~<br>~~——_—$———————_——_—_~~|1.28<br>~~eee~~<br>~~——_—$———————_——_—_~~<br>~~ee~~|—<br>~~eee~~<br>~~——_—$———————_——_—_~~<br>~~ee~~|µ<br>~~eee~~<br>~~——_—$———————_——_—_——~~<br>~~ee~~|VDS= 0V,VGS= 0V,f = 1.0MHz<br>~~eee~~<br>~~————_——~~|
|Total Gate Charge<br>~~——_—$———————_——_—_~~<br>~~ee~~|Qg<br>~~——_—$———————_——_—_~~<br>~~ee~~|—<br>~~——_—$———————_——_—_~~<br>~~ee~~|59.2<br>~~——_—$———————_——_—_~~<br>~~ee~~<br>~~ee~~|—<br>~~——_—$———————_——_—_~~<br>~~ee~~<br>~~ee~~|nC<br>~~——_—$———————_——_—_——~~<br>~~ee~~<br>~~ee~~|VDS= -15V, VGS= -4.5V,<br>ID= -10A<br>~~————_——~~<br>~~ee~~|
|Gate-Source Charge<br>~~ee~~|Qgs<br>~~ee~~|—<br>~~ee~~|16.1<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|||
|Gate-Drain Charge<br>~~ee~~|Qgd<br>~~ee~~|—<br>~~ee~~|15.7<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|||
|Turn-On DelayTime<br>~~eee~~|tD(on)<br>~~eee~~|—<br>~~eee~~|11.4<br>~~ee~~<br>~~eee~~|—<br>~~ee ~~<br>~~eee~~|ns<br> ~~ee~~<br>~~eee~~|VDS= -15V, VGEN= -10V,<br>RG= 6Ω, ID= -1A<br>~~eee~~|
|Turn-On Rise Time<br>~~eee~~|tr<br>~~eee~~|—<br>~~eee~~|9.4<br>~~eee~~|—<br>~~eee~~|||
|Turn-Off DelayTime<br>~~eee~~|tD(off)<br>~~eee~~|—<br>~~eee~~|260.7<br>~~eee~~|—<br>~~eee~~|||
|Turn-Off Fall Time<br>~~eee~~|tf<br>~~eee~~|—<br>~~eee~~|99.3<br>~~eee~~|—<br>~~eee~~|||



7. Device mounted on FR-4 substrate PCB, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 

- 8 .UIS in production with L = 0.1mH, TJ = +25°C. 

9. Short duration pulse test used to minimize self-heating effect. 

10. Guaranteed by design. Not subject to production testing. 

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DMP3010LK3 Document number: DS35716 Rev. 6 - 3 

December 2018 © Diodes Incorporated 

**DMP3010LK3** 

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30 30<br>VGS = -10V<br>25 V GS  = -4.5V 25 V DS  = -5V<br>VGS = -5.0V<br>20 V GS  = -3.5V 20<br>VGS = -3.0V<br>15 VGS = -2.5V 15<br>10 10<br>TA = 150°C<br>5 5 TA = 125°C T A  = 85°C<br>TA = 25°C<br>0 VGS = -2.0V 0 TA = -55°C<br>0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 1.5 2 2.5 3<br>-VDS, DRAIN-SOURCE VOLTAGE (V) -VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1  Typical Output Characteristics | Figure 2  Typical Transfer Characteristics Y<br>0.020 0.016<br>0.014 V GS  = -4.5V<br>0.016<br>0.012<br>0.010 TA = 150°C<br>0.012 &oe<br>TA = 125°C<br>0.008 T A  = 85°C<br>0.008 0.006 T A  = 25°C<br>VGS = -4.5V TA = -55°C<br>0.004<br>0.004 V GS  = -10V<br>0.002<br>0 0<br>0 5 10 15 20 25 30 0 5 10 15 20 25 30<br>-ID, DRAIN-SOURCE CURRENT (A) oe -ID, DRAIN CURRENT (A)<br>Figure 3  Typical On-Resistance  Figure 4  Typical On-Resistance<br>vs. Drain Current and Gate Voltage  vs. Drain Current and Temperature<br>1.6 WL 0.020<br>1.4 0.016<br>1.2 0.012<br>QF<br>1.0 V GS  = -10V 0.008 VIGSD = -10A = -4.5V<br>ID = -20A<br>0.8 V GS  = -4.5V 0.004 V GS  = -10V<br>a ID = -10A ——— ID = -20A<br>0.6 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)<br>Figure 5  On-Resistance Variation with Temperature Figure 6  On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>D D<br>-I -I<br>)Ω )Ω<br>, DRAIN-SOURCE ON-RESISTANCE ( ,  DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>, DRAIN-SOURCE  , DRAIN-SOURCE<br>DSON DSON<br>R R<br>ON-RESISTANCE (NORMALIZED) ON-RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br>


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**DMP3010LK3** 

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2.5 30<br>25<br>2.0<br>20<br>1.5 ID = -1mA<br>15 TA = 25°C<br>ID = -250µA<br>1.0<br>10<br>0.5<br>5<br>0 0<br>-50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>TA, AMBIENT TEMPERATURE (°C) -VSD, SOURCE-DRAIN VOLTAGE (V)<br>Figure 7  Gate Threshold Variation vs. Ambient Temperature Figure 8  Diode Forward Voltage vs. Current<br>a ¢<br>10,000 100,000<br>C iss<br>10,000<br>TA = 150°C<br>Coss 1,000 TA = 125°C<br>1,000<br>Crss 100 TA = 85°C<br>—-<br>10<br>f = 1MHz<br>100 1 T A  = 25°C<br>0 4 8 12 16 20 0 5 10 15 20 25 30<br>-VDS, DRAIN-SOURCE VOLTAGE (V) -VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9  Typical Total Capacitance Figure 10  Typical Leakage Current vs. Drain-Source Voltage<br>10 100<br>90 Single Pulse<br>RθJA = 72°C/W<br>8 V DS = -15V 80 RθJA(t) = r(t) * RθJA<br>ID = -10A TJ - TA = P * RθJA<br>70<br>6 60<br>50<br>4 40<br>30<br>2 20<br>10<br>“F 0 0<br>0 20 40 60 80 100 120 140 0.001 0.01 0.1 1 10 100 1,000<br>Qg, OTAL GATE CHARGE [T] (nC) Figure 12  Single Pulse Maximum Power Dissipationt1, PULSE DURATION TIME (sec)<br>Figure 11  Gate-Source Voltage vs. Total Gate Charge<br>DMP3010LK3 4 of 7  December 2018<br>www.diodes.com   © Diodes Incorporated<br>, SOURCE CURRENT (A)<br>S<br>, GATE THRESHOLD VOLTAGE (V) -I<br>GS(TH)<br>-V<br>, LEAKAGE CURRENT (nA)<br>DSS<br>, JUNCTION CAPACITANCE (pF) -I<br>T<br>C<br>G<br>, ATE-SOURCE VOLTAGE (V) , PEAK TRANSIENT POWER (W)<br>GS<br>-V P(pk)<br>**----- End of picture text -----**<br>


DMP3010LK3 Document number: DS35716 Rev. 6 - 3 

December 2018 © Diodes Incorporated 

**DMP3010LK3** | 

**==> picture [463 x 474] intentionally omitted <==**

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L'mceorreoerRate#toseiL.<br>700 80<br>Starting Temperature (TJ) = 25°C<br>600 70<br>SCC EAS 60<br>500<br>50<br>apA <a<br>400<br>IAS 40<br>| _P ORES<br>300<br>30<br>200<br>20<br>100<br>10<br>0 0<br>0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>INDUCTOR (mH)<br>Figure 13  Single-Pulse Avalanche Tested<br>1<br>aPCT D D = 0.5= 0.7 Og a Ss<br>D = 0.3<br>EUAN CTMMOHeR<li D = 0.9 PTT AMMUII OnlNRTTTll<br>0.1 ae een | Samy ll<br>OP D = 0.1 eeEe<br>a a ee ee en Se eee ee<br>ET D = 0.50 TT 7 | TT ANSSSApm NTaTI<br>D = 0.02<br>San BE,4B Seenae st AS |<br>0.01 PTon D = 0.01 ZTE 2A eeLT  TINGIN  III RθJA(t) = r(t) * RθJA ilHetre l !<br>arTQa OO Oa 0CA RθJA = 72°C/W Per<br>D = 0.005 Duty Cycle, D = t1/ t2<br>mea NATTT eT mane<br>Le a St A SN TTT<br>et ARKO,Ta eaeeBP|Sepay TT TTT PT<br>D = Single Pulse<br>0.001 RP Oaer<br>0.001 0.01 0.1 1 10 100 1,000 10,000<br>t1, PULSE DURATION TIMES (sec)<br>Figure 14  Transient Thermal Resistance<br>ASI<br>, AVALANCHE ENERGY (mJ)<br>AS<br>E , AVALANCHE CURRENT (A)<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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**DMP3010LK3** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**==> picture [465 x 516] intentionally omitted <==**

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TO252 (DPAK)<br>E<br>A<br>b3<br>7°±1°<br>c<br>L3<br>Ft oo<br>TO252 (DPAK)<br>Dim Min  Max  Typ<br>A  2.19  2.39  2.29<br>D A2 A1  0.00  0.13  0.08<br>L4 H A2  0.97  1.17  1.07<br>b  0.64  0.88 0.783<br>b2  0.76  1.14  0.95<br>apy =so=<br>b3  5.21  5.46  5.33<br>c  0.45 0.58 0.531<br>D  6.00 6.20 6.10<br>e b( 3x) D1  5.21  —  —<br>b2( 2x) e  —  —  2.286<br>ht NS === E  6.45  6.70  6.58<br>Gauge Plane 0.508 E1  4.32  —  —<br>H  9.40 10.41 9.91<br>L  1.40  1.78  1.59<br>E1 D1 Seating Plane L3  0.88  1.27  1.08<br>L A1 L4  0.64  1.02  0.83<br>a  0°  10°  —<br>2.74REF<br>| oR SS== All Dimensions in mm<br>S) : < ) _ REFE<br>Suggested Pad Layout<br>Please see http://www.diodes.com/package-outlines.html for the latest version.<br>TO252 (DPAK)<br>~~ X1<br>Y1 Dimensions  Value (in mm)<br>C  4.572<br>X  1.060<br>Y2 X1  5.632<br>Y  2.600<br>C Y1  5.700<br>a Y2  10.700<br>Y<br>nt X<br>a<br>**----- End of picture text -----**<br>


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DMP3010LK3 Document number: DS35716 Rev. 6 - 3 

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**DMP3010LK3** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes 

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. & Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: ES A.   Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the NE labeling can be reasonably expected to result in significant injury to the user. B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any Se use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2018, Diodes Incorporated 

**www.diodes.com** 

7 of 7 **www.diodes.com** 

DMP3010LK3 Document number: DS35716 Rev. 6 - 3 

December 2018 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMP3010LK3Q-13/power-mosfet-p-channel-30-v-17-a-6500-ohm-to-252)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmp3010lk3q-13/mosfet-aecq101-p-ch-30v-17a-to252/dp/3127360)
---

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