# Power MOSFET, P Channel, 30 V, 50 A, 5700 µohm, VDFN3333, Surface Mount

![Product image](https://novapart.co/image/farnell:2748292RL/)

**URL**: https://novapart.co/products/DMP3007SCG-13/power-mosfet-p-channel-30-v-50-a-5700-ohm-vdfn3333
**SKU**: DMP3007SCG-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2330
**Stock**: 10+

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-50A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0057ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (15-Jan-2018) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2.4W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | VDFN3333 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 50A |
| Drain Source On State Resistance | 5700µohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2748292RL/)

## **DMP3007SCG** pT **30V P-CHANNEL ENHANCEMENT MODE MOSFET** 

## ~~—_—_—_—~~ **Product Summary** 

|**Product Summaryy**<br>~~—_—_—_—~~|**Product Summaryy**<br>~~—_—_—_—~~|**Product Summaryy**<br>~~—_—_—_—~~|
|---|---|---|
|~~—_—_—_—~~|||
|**BVDSS**|**RDS(ON) Max**|**ID Max**<br>**TC = +25°C**|
|-30V|6.8mΩ @ VGS= -10V|-50A|
||13mΩ@VGS= -4.5V|-36A|



## **Features and Benefits** 

- Low RDS(ON) – Ensures On State Losses are Minimized 

- Small Form Factor Thermally Efficient Package Enables Higher Density End Products 

- Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product 

- HBM ESD Protection Level of 8kV Typical 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

## **Description** 

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Mechanical Data** 

- Case: V-DFN3333-8 (Type B) 

- Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 

## **Applications** 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminal Connections Indicator: See Below Diagram Terminals: Finish –NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 **e4** 

- Backlighting 

- Power Management Functions 

- DC-DC Converters 

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 Weight: 0.030 grams (Approximate)<br>D<br>Pin 1<br>S<br>S<br>S<br>G<br>G<br>D<br>ESD PROTECTED D<br>D<br>ASS D & Gate Protection Diode S<br>Top View  Bottom View  Equivalent Circuit<br>g Information Information (Note 4)<br>Part Number Case Packaging<br>DMP3007SCG-7  V-DFN3333-8 (Type B) 2,000/Tape & Reel<br>DMP3007SCG-13 V-DFN3333-8 (Type B) 3,000/Tape & Reel<br>**----- End of picture text -----**<br>


## **Ordering Information Information** (Note 4) 

- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

**Marking Information** V07= Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 16 = 2016) WW = Week Code (01 to 53) **V07** ~~rn~~ DMP3007SCG 1 of 7 September 2016 **www.diodes.com** © Diodes Incorporated 

DMP3007SCG Document number: DS38990  Rev. 3 - 2 

September 2016 © Diodes Incorporated 

**DMP3007SCG** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|-30|V|
|Gate-Source Voltage|||VGSS|±25|V|
|Continuous Drain Current (Note 7) VGS= -10V|Steady<br>State|TC= +25°C<br>TC= +70°C|ID|-50<br>-40|A|
|Maximum Continuous BodyDiode Forward Current (Note 7)|||IS|-40|A|
|Pulsed Drain Current (10µs Pulse, DutyCycle = 1%)|||IDM|-100|A|
|Avalanche Current (Note 8) L = 1mH|||IAS|-16|A|
|Avalanche Energy(Note 8) L = 1mH|||EAS|130|mJ|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation (Note 5)|TA= +25°C|PD|1.0|W|
|Thermal Resistance, Junction to Ambient (Note 5)|Steady State|RθJA|124|°C/W|
|Total Power Dissipation (Note 6)|TA= +25°C|PD|2.4|W|
|Thermal Resistance, Junction to Ambient (Note 6)|Steady State|RθJA|52|°C/W|
|Thermal Resistance, Junction to Case (Note 7)||RθJC|4.0|°C/W|
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~——_—_—_————~~|**Symbol**<br>~~——_—_—_————~~|**Min**<br>~~——_—_—_————~~|**Typ **<br>~~——_—_—_————~~|**Max**<br>~~——_—_—_————~~|**Unit**<br>~~——_—_—_————~~|**Test Condition**<br>~~——_—_—_————~~|
|**OFF CHARACTERISTICS(Note 9) **<br>~~——_—_—_————~~|||||||
|Drain-Source Breakdown Voltage<br>~~——_—_—_————~~|BVDSS<br>~~——_—_—_————~~|-30<br>~~——_—_—_————~~|—<br>~~——_—_—_————~~|—<br>~~——_—_—_————~~|V<br>~~——_—_—_————~~|VGS= 0V, ID= -250μA<br>~~——_—_—_————~~|
|Zero Gate Voltage Drain Current|IDSS|—|—|-1|μA|VDS= -24V, VGS= 0V|
|Gate-Source Leakage<br>~~Sy~~|IGSS<br>~~y~~|—<br>~~ya~~|—<br>~~a~~|±10<br>~~ep~~|μA<br>~~ep~~|VGS= ±20V, VDS= 0V<br>~~ep~~|
|**ON CHARACTERISTICS(Note 9)**<br>~~Sya~~<br>~~ep~~|||||||
|Gate Threshold Voltage<br>~~Sy~~<br>~~ee~~|VGS(TH)<br>~~y~~<br>~~ee~~|-1.0<br>~~ya~~<br>~~ee~~|—<br>~~a~~<br>~~ee~~|-3.0<br>~~ep~~<br>~~ee~~|V<br>~~ep~~<br>~~ee~~|VDS= VGS, ID= -250μA<br>~~ep~~<br>~~ee~~|
|Static Drain-Source On-Resistance<br>~~Sy~~<br>~~ee~~|RDS(ON)<br>~~y~~<br>~~ee~~|—<br>~~y a~~<br>~~ee~~|5.7<br>~~a~~<br>~~ee~~|6.8<br>~~ep~~<br>~~ee~~|mΩ<br>~~ep~~<br>~~ee~~|VGS= -10V, ID= -11.5A<br>~~ep~~<br>~~ee~~|
|||—<br>~~ee~~|8.0<br>~~ee~~|13<br>~~ee~~||VGS= -4.5V, ID= -8.5A<br>~~ee~~|
|Diode Forward Voltage<br>~~pf~~|VSD<br>~~pf~~|—<br>~~pf~~|-0.7<br>~~pf~~|-1.2<br>~~pf~~|V<br>~~pf~~|VGS= 0V, IS= -1A<br>~~pf~~|
|**DYNAMIC CHARACTERISTICS(Note 10)**|||||||
|Input Capacitance<br>~~pO~~|Ciss|—|2,826|—|pF|VDS= -15V, VGS= 0V,<br>f = 1.0MHz|
|Output Capacitance|Coss|—|606|—|pF||
|Reverse Transfer Capacitance|Crss|—|305|—|pF||
|Gate Resistance|Rg|—|23|—|Ω|VDS= 0V, VGS= 0V, f = 1.0MHz|
|Total Gate Charge(VGS= -4.5V)<br>~~a~~|Qg<br>~~a~~|—<br>~~a~~|31.2<br>~~a~~|—<br>~~a~~|nC<br>~~a~~|VDS= -15V, ID= -11.5A|
|Total Gate Charge(VGS= -10V)<br>~~pO~~|Qg|—|64.2|—|nC||
|Gate-Source Charge|Qgs|—|10.6|—|nC||
|Gate-Drain Charge|Qgd|—|11.6|—|nC||
|Turn-On Delay Time<br>~~ee~~|tD(ON)<br>~~ee~~|—<br>~~ee~~|4.8<br>~~ee~~|—<br>~~ee~~|ns<br>~~ee~~|VDD= -15V, VGS= -10V,<br>Rg= 6Ω, ID= -11.5A<br>~~ee~~|
|Turn-On Rise Time<br>~~ee~~|tR<br>~~ee~~|—<br>~~ee~~|4.3<br>~~ee~~|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Delay Time<br>~~ee~~|tD(OFF)<br>~~ee~~|—<br>~~ee~~|306<br>~~ee~~|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~ee~~|tF<br>~~ee~~|—<br>~~ee~~|125<br>~~ee~~|—<br>~~ee~~|ns<br>~~ee~~||
|Reverse Recovery Time<br>~~———~~|tRR<br>~~———~~|—<br>~~———~~|19<br>~~———~~|—<br>~~———~~|ns<br>~~———~~|IS= -11.5A, dI/dt = 100A/μs<br>~~———~~|
|Reverse Recovery Charge<br>~~———~~|QRR<br>~~———~~|—<br>~~———~~|9.8<br>~~———~~|—<br>~~———~~|nC<br>~~———~~||



7. Thermal resistance from junction to soldering point (on the exposed drain pad). 

8. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 

9. Short duration pulse test used to minimize self-heating effect. 

10. Guaranteed by design. Not subject to product testing. 

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**DMP3007SCG** 

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30 30<br>VGS = -10V<br>25 fH VGS = -4.5V 25 VDS = -5.0V oar enn<br>VGS = -4.0V<br>20 FO VGS = -3.5V [A)] (T 20<br>[N] E<br>R<br>R<br>15 UC 15<br>oo senen) een<br>VGS = -3.0V N<br>A [I]<br>10 RD 10 TA = 150 C<br>VGS = -2.5V ,I D TA = 125C TA = 25 C<br>5 VGS = -2.7V 5 TA = 85 C<br>TA = -55 C<br>0 0<br>0 0.5 1 1.5 2 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>VDS, DRAIN -SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristics Figure 2 Typical Transfer Characteristics<br>10 30<br>ID = -200mA<br>9<br>Ty VGS  = -4.5V 25 Te LL<br>8 ID = -100mA<br>20<br>7 SeEEree, 6<br>6 VGS = -10V 15<br>Tt i}| ff<br>5<br>10<br>4<br>5<br>3 FAA<br>2 EL 0 ||ft | ft<br>0 5 10 15 20 25 30 0 5 10 15 20 25<br>ID, DRAIN SOURCE CURRENT (A) V GS, GATE-SOURCE VOLTAGE (V)<br>Figure 3 Typical On-Resistance vs.  Figure 4 Typical Drain-Source On-Resistance<br>Drain Current and Gate Voltage  vs. Gate-Source Voltage<br>10 2<br>9 TA = 150 C 1.8<br>tf | ft tt ft ttt LL<br>8 TA = 125 C 1.6 VGS = -10V<br>TA = 85 C ID = -11.5A<br>7 SSE ES CO 1.4 HHH =e<br>6 TA = 25 C <br>1.2 V GS  = -4.5V<br>5 ID = -8.5A<br>ae TA = -55 C 1 Ee<br>4<br>0.8<br>3<br>ca VGS = -10V 0.6 eee<br>2<br>0 poi 5 ft 10 | 15 tt 20 25 30 0.4 CEE EELe<br>IFigure 5 Typical On-Resistance vs. D, DRAIN SOURCE CURRENT (A) -50 -25 T , JUNCTION TEMPERATURE (J 0 25 50 75 100 125C) 150<br>Drain Current and Temperature  Figure 6 On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A)<br>ID<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (NORMALIZED)<br>, DRAIN CURRENT (A)<br>ID<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (m<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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**DMP3007SCG** 

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14 3<br>12 » 2.5 PEt<br>VGS = -4.5V<br>HH TT Ed<br>10 ID = -8.5A 2 I D  = 250µA<br>|o ac| e |_—| | |<br>8<br>1.5 I D = 1mA<br>eTee Pra |<br>6<br>eater 1 ASS<br>4 VGS = -10V<br>ID = -11.5A<br>0.5<br>2 cote |=<br>0 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TA, AMBIENT TEMPERATURE (°C)<br>Figure 7 On-Resistance Variation with Temperature Figure 8 Gate Threshold Variation vs. Junction Temperature<br>30 10000<br>25 ee ——— C iss<br>TA= 150 C oo<br>20 le> e e ee |ea<br>TA= 125 C<br>tk<br>15 HT T A = 25 C 1000 NEE Coss<br>TA = 85 C<br>10 HY| KK T A = -55 C =a C rss<br>R Se<br>5 WT] St<br>} ee f=1MHz<br>0 100<br>0 WS 0.3 0.6 0.9 1.2 0 EE 2 4 6  eT 8 10 12<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS , DRAIN-SOURCE VOLTAGE (V)<br>Figure 9 Diode Forward Voltage vs. Current Figure 10 Typical Junction Capacitance<br>10 1000<br>9 RLimited DS(ON) PW = 100µs<br>8 100<br>7 V DS  = -15V ) [A] (T<br>IIDD = 11.5A NE BttN NX NNO<br>6 R 10<br>R<br>U<br>5 C DC<br>4 Z| I [N] AR 1 PW = 10s WN _M IN / \<br>D<br>3 D PW = 1s<br>I [,] T = 150°C PW = 100ms<br>2 0.1 TJ(MAX)C = 25°C PW = 10msPW = 1ms<br>1 VGS = -10V<br>Single Pulse<br>0 0.01 DUT on 1 * MRP Board<br>0 10 20 30 40 50 60 70<br>0.01 0.1 1 10 100<br>Qg, TOTAL GATE CHARGE (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11 Gate Charge Figure 12 SOA, Safe Operation Area<br>DS(ON)<br>R<br>, DRAIN CURRENT (A)<br>ID<br>GS,<br>V<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, SOURCE CURRENT (A)<br>IS<br> GATE THRESHOLD VOLTAGE (V)<br>V<br>GS<br>DS(on)<br>)<br> DRAIN-SOURCE ON-RESISTANCE ( ,<br>R<br>, GATE THRESHOLD VOLTAGE (V)<br>V<br>GS(TH)<br>**----- End of picture text -----**<br>


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1<br>D = 0.9<br>E ee D = 0.7 0 ee<br>C D = 0.5<br>bo e o toc oe TTT<br>eee D = 0.3 e<br>[SISTAN] RE UT EEALLee eee =, te |<br>0.1<br>A [L] BEEF D = 0.1 aA Et<br>M ae Oe ee ee en<br>[R] E bet D = 0.05 OTT<br>HT eA FE<br>T [TH]<br>N D = 0.02<br>TER TIT TH<br>I [E] 0.01 PTT OA UNIT LUI CTI TIT |<br>N [S] D = 0.01<br>a Ss 26 te ee et<br>er HT et<br>T [RA]<br>by D = 0.005  CET R JA(t) = r(t) * R JA al<br>r [(t),] Rc al<br>Single Pulse RDuty Cycle, D = t1/ t2JA = 126°C/W<br>0.001 aCe CEE CAA |<br>0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIMES (sec)<br>Figure 13 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **V-DFN3333-8 (Type B)** 

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A3<br>A<br>Seating Plane<br>A1<br>D<br>e b<br>Pe 4<br>L<br>AY LU Lo L<br>D2<br>i e<br>E | n<br>E2<br>L1<br>: FLEE LEi;<br>z k<br>**----- End of picture text -----**<br>


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V-DFN3333-8<br>(Type B)<br>es Dim  Min  Max  Typ<br>A  0.75 0.85 0.80<br>rf, |_|<br>A1  0.00 0.05 0.02<br>es es<br>A3  --  --  0.203<br>b  0.27  0.37  0.32<br>D  3.25 3.35 3.30<br>e D2  es 2.17  es 2.37  2.27<br>E  3.25 3.35 3.30<br>> E2  1.85 2.05 1.95<br>rf e  --  --  0.65<br>k  --  --  0.33<br>ee ff |_|<br>Frff L  0.35 0.45 0.40<br>ee L1  --  --  | 0.3 _ 4<br>z  --  --  0.515<br>fr All Dimensions in mm  ff |_|<br>| rt~—‘CSCSC~S<br>**----- End of picture text -----**<br>


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## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **V-DFN3333-8 (Type B)** 

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X1<br>Y3<br>Tuy<br>Y2<br>Y1<br>G<br>rl a<br>Y<br>C X<br>C1<br>**----- End of picture text -----**<br>


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Dimensions  Value (in mm)<br>C  0.650<br>C1  1.950<br>G  0.650<br>X  0.420<br>———<br>X1  2.370<br>Y  0.700<br>Y1  0.400<br>Y2  2.150<br>Y3 0.450<br>ee<br>**----- End of picture text -----**<br>


6 of 7 **www.diodes.com** 

DMP3007SCG Document number: DS38990  Rev. 3 - 2 

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**DMP3007SCG** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2016, Diodes Incorporated 

**www.diodes.com** 

7 of 7 **www.diodes.com** 

DMP3007SCG Document number: DS38990  Rev. 3 - 2 

September 2016 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMP3007SCG-13/power-mosfet-p-channel-30-v-50-a-5700-ohm-vdfn3333)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmp3007scg-13/mosfet-p-ch-30v-50a-vdfn3333-8/dp/2748292RL)
---

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