# Power MOSFET, P Channel, 30 V, 14 A, 4100 µohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:3943746RL/)

**URL**: https://novapart.co/products/DMP3007LSS-13/power-mosfet-p-channel-30-v-14-a-4100-ohm-soic
**SKU**: DMP3007LSS-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3220
**Stock**: 1000+
**Lead Time**: 106 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.4W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 14A |
| Drain Source On State Resistance | 4100µohm |
| Gate Source Threshold Voltage Max | 2.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943746RL/)

**DMP3007LSS P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
|**BVDSS**<br>**RDS(ON) Max**<br>**ID Max**<br>**TA = +25°C (t<10s)**<br>-30V<br>7.0mΩ @ VGS= -10V<br>-17A<br>10.0mΩ @ VGS= -4.5V<br>-13A|||
|**BVDSS**|**RDS(ON) Max**|**ID Max**<br>**TA = +25°C (t<10s)**|
|-30V|7.0mΩ @ VGS= -10V|-17A|
||10.0mΩ @ VGS= -4.5V|-13A|



## **Features and Benefits** 

- Low On-Resistance 

- Low Input Capacitance 

- Fast Switching Speed 

- ESD Protected Gate 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Description and Applications** 

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

## **Mechanical Data** 

   - Case: SO-8 

   - Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 3 per J-STD-020 

- Backlighting 

- Power Management Functions 

- DC-DC Converters 

- Terminal Connections Indicator: See Diagram Below 

- Terminals: Finish—Matte Tin Annealed Over Copper Leadframe. Solderable per MIL-STD-202, Method 208 **e3** 

- Weight: 0.074 grams (Approximate) 

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D<br>S D<br>S D<br>G<br>S D<br>G D<br>ESD PROTECTED<br>bE > w e<br>Gate Protection Diode S<br>Top View  Internal Schematic  Top View<br>Pin Configuration<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMP3007LSS-13|SO-8|2,500/Tape & Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

   2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

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8 5<br>Titty ttt<br>      = Manufacturer’s Marking<br>P3007LS P3007LS = Product Type Marking Code<br>YYWW = Date Code Marking<br>YY WW YY or YY= Year (ex: 18 = 2018)<br>WW = Week (01 to 53)<br>1 4<br>**----- End of picture text -----**<br>


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DMP3007LSS Document number: DS39753 Rev. 4 - 2 

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**DMP3007LSS** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|-30|V|
|Gate-Source Voltage|||VGSS|±25|V|
|Continuous Drain Current, VGS= 10V (Note 6)|Steady State|TA= +25°C<br>TA= +70°C|ID|-14<br>-11.5|A|
||t<10s|TA= +25°C<br>TA= +70°C||-17<br>-12.5|A|
|Maximum Continuous BodyDiode Forward Current(Note 6)|||IS|-16.5|A|
|Pulsed Drain Current(10µs Pulse,DutyCycle = 1%)|||IDM|-120|A|
|Pulsed BodyDiode Forward Current(10µs Pulse,DutyCycle = 1%)|||ISM|-120|A|
|Avalanche Current, L=1mH(Note 7)|||IAS|-13|A|
|Avalanche Energy, L=1mH(Note 7)|||EAS|87|mJ|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)|TA= +25°C|PD|1.4|W|
|Thermal Resistance, Junction to Ambient (Note 5)|SteadyState|RϴJA|91|°C/W|
||t<10s||51|°C/W|
|Total Power Dissipation(Note 6)|TA= +25°C|PD|2.1|W|
|Thermal Resistance, Junction to Ambient (Note 6)|SteadyState|RϴJA|59|°C/W|
||t<10s||48|°C/W|
|Thermal Resistance,Junction to Case(Note 6)||RϴJC|9|°C/W|
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



**Electrical Characteristics** (TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics **(TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~ee~~|**Symbol**<br>~~ee~~|**Min**<br>~~ee~~|**Typ **<br>~~ee~~|**Max**<br>~~ee~~|**Unit**<br>~~ee~~|**Test Condition**<br>~~ee~~|
|**OFF CHARACTERISTICS**(Note 8) <br>~~ee~~|||||||
|Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~|-30<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|V<br>~~ee~~|VGS= 0V, ID= -250μA<br>~~ee~~|
|Zero Gate Voltage Drain Current<br>~~ey~~|IDSS<br>~~ey~~|—<br>~~ey~~|—<br>~~ey~~|-1|μA|VDS= -24V, VGS= 0V|
|Gate-Source Leakage<br>~~ey~~|IGSS<br>~~ey~~|—<br>~~ey~~|—<br>~~ey~~|±10|μA|VGS= ±20V, VDS= 0V|
|**ON CHARACTERISTICS**(Note 8)<br>~~sDGO~~<br>~~(OR~~|||||||
|Gate Threshold Voltage<br>~~es~~|VGS(TH)<br>~~es~~<br>~~sD~~|-1.0<br>~~es~~<br>~~sD~~|—<br>~~es~~<br>~~sD~~|-2.8<br>~~es~~<br>~~GO~~<br>~~—~~|V<br>~~es~~<br>~~(OR~~|VDS= VGS, ID= -250μA<br>~~es~~|
|Static Drain-Source On-Resistance<br>~~i~~|RDS(ON)<br>~~sD~~<br>~~i~~|—<br>~~sD~~<br>~~i~~|4.1<br>~~sD ~~<br>~~i~~|7<br> ~~GO~~<br>~~i~~<br>~~—~~|mΩ<br>~~(OR~~<br>~~i~~|VGS= -10V, ID= -17A<br>~~i~~|
|||—<br>~~i~~|5.9<br>~~i~~|10<br>~~i~~<br>~~—~~||VGS= -4.5V, ID= -15A<br>~~i~~|
|||—<br>~~i~~|6.4<br>~~i~~|12<br>~~i~~<br>~~—~~||VGS= -4.0V, ID= -13A<br>~~i~~|
|Diode Forward Voltage|VSD|—|-0.7|-1.2<br>~~—~~|V|VGS= 0V, IS= -1A|
|**DYNAMIC CHARACTERISTICS**(Note 9)|||||||
|Input Capacitance<br>~~ee~~|Ciss<br>~~ee~~|—<br>~~ee~~|2826<br>~~ee~~|—<br>~~ee~~|pF<br>~~ee~~|VDS= -15V, VGS= 0V,<br>f = 1.0MHz<br>~~ee~~<br>~~oe~~|
|Output Capacitance<br>~~ee~~<br>~~———~~|Coss<br>~~ee~~|—<br>~~ee~~|606<br>~~ee~~<br>~~oe~~|—<br>~~ee~~<br>~~oe~~|pF<br>~~ee~~<br>~~oe~~||
|Reverse Transfer Capacitance<br>~~ee~~<br>~~———~~|Crss<br>~~ee~~|—<br>~~ee~~|305<br>~~ee~~<br>~~oe~~|—<br>~~ee~~<br>~~oe~~|pF<br>~~ee~~<br>~~oe~~||
|Gate Resistance<br>~~———~~|Rg|—|22.8<br>~~oe~~|—<br>~~oe~~|Ω<br>~~oe~~|VDS= 0V, VGS= 0V, f = 1.0MHz<br>~~oe~~|
|Total Gate Charge(VGS= -4.5V)<br>~~———~~|Qg|—|31.2<br>~~oe~~|—<br>~~oe~~|nC<br>~~oe~~|VDS= -15V, ID= -11.5A<br>~~oe~~|
|Total Gate Charge(VGS= -10V)<br>~~———~~|Qg|—|64.2<br>~~oe~~|—<br>~~oe~~|nC<br>~~oe~~||
|Gate-Source Charge<br>~~———~~|Qgs|—|10.6<br>~~oe~~|—<br>~~oe~~|nC<br>~~oe~~||
|Gate-Drain Charge|Qgd|—|11.6|—|nC||
|Turn-On DelayTime<br>~~SSS~~|tD(ON)<br>~~SSS~~|—<br>~~SSS~~|4.8<br>~~SSS~~|—<br>~~SSS~~|ns<br>~~SSS~~|VDD= -15V, VGS= -10V,<br>Rg= 6Ω, ID= -11.5A<br>~~SSS~~|
|Turn-On Rise Time<br>~~SSS~~|tR<br>~~SSS~~|—<br>~~SSS~~|4.3<br>~~SSS~~|—<br>~~SSS~~|ns<br>~~SSS~~||
|Turn-Off Delay Time<br>~~SSS~~|tD(OFF)<br>~~SSS~~|—<br>~~SSS~~|306<br>~~SSS~~|—<br>~~SSS~~|ns<br>~~SSS~~||
|Turn-Off Fall Time<br>~~SSS~~|tF<br>~~SSS~~|—<br>~~SSS~~|125<br>~~SSS~~|—<br>~~SSS~~|ns<br>~~SSS~~||
|Reverse Recovery Time<br>~~ee~~|tRR<br>~~ee~~|—<br>~~ee~~|19<br>~~ee~~|—<br>~~ee~~|ns<br>~~ee~~|IS= -11.5A, di/dt = 100A/μs<br>~~ee~~|
|Reverse RecoveryCharge<br>~~ee~~|QRR<br>~~ee~~|—<br>~~ee~~|9.8<br>~~ee~~|—<br>~~ee~~|nC<br>~~ee~~||



7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 

8. Short duration pulse test used to minimize self-heating effect. 

9. Guaranteed by design. Not subject to product testing. 

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30 30<br>VGS = -10V VGS = -2.5V VDS = -5.0V<br>He VGS = -4.5V<br>25 25<br>VGS = -4V<br>VGS = -3V<br>20 V GS  = -2.8V 20<br>TJ = 150°C TJ = 25°C<br>15 pa 15 T J  = 125°C<br>VGS = -2.3V TJ = -55°C<br>TJ = 85°C<br>(aes<br>10 10<br>Ae VGS  = -2.2V con<br>5 a 5 es |<br>VGS = -2V<br>0 x) 0<br>0 1 2 3 4 5 0 1 2 3 4<br>VDS , DRAIN-SOURCE VOLTAGE (V) V GS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristic Figure 2 Typical Transfer Characteristics<br>0.008 0.3<br>0.007 CLELEL VGS = -4V »=6o 0.25 Qe<br>ID = -13A<br>0.006 VGS  = -4.5V 0.2 ID = -15A<br>ID = -17A<br>0.005 S SeSSC 0.15 TTSTE<br>VGS = -10V<br>0.004 0.1<br>0.003 SSCeCe 0.05 GEES<br>0.002 0 CEEEEE) 5 10 15 20 25 30 = 00 GREECE 2 4 6 8 10 12 14 16 18 20<br>I D, DRAIN-SOURCE CURRENT (A)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3 Typical On-Resistance vs.  Figure 4 Typical Drain-Source On-Resistance<br>Drain Current and Gate Voltage  vs. Gate-Source Voltage<br>0.008 1.8<br>VGS = -10V<br>0.007 Sore T J  = 150°C 1.6 VGS = -4V<br>TJ = 125°C ID = -13A<br>0.006 VGS  = -4.5V<br>TJ = 85°C 1.4 ID = -15A<br>0.005 EE Eo VGS  = -10V<br>TJ = 25°C 1.2 I D = -17A<br>0.004<br>ft TJ = -55°C ft a<br>0.003 1<br>0.0020.001 Seeee 0.8 Aen<br>0 5 10 15 20 25 30<br>0.6<br>ID, DRAIN CURRENT (A) -50 -25 0 25 50 75 100 125 150<br>Figure 5 Typical On-Resistance vs.  TJ, JUNCTION TEMPERATURE (°C)<br>Drain Current and Temperature Figure 6 On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A)<br>D , DRAIN CURRENT (A)<br> I D<br> I<br>)Ω )Ω<br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R DS(ON)<br>R<br>)<br>Ω<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>, DRAIN-SOURCE ON-RESISTANCE (<br>ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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0.012 1.8<br>)V<br>ToT (E 1.6 TT<br>0.01 G<br>VGS = -4V AT<br>0.008 VGS = -4.5V ID = -13A LOV 1.4<br>coe ID = -15A DL =AA<br>O 1.2 ID= -1mA D= -1mA = -1mA<br>H<br>S<br>0.006 ER IDD = -250µA<br>Theat H = H H 1 SA<br>VGS = -10V T<br>0.004 a a I D  = -17A ET BEERNNGE<br>ee A - PTT PTT NNO<br>G 0.8<br>, h))<br>0.002 aann t(SG 0.6 -PCCCENS<br>V<br>0 -50 COOPPPP) -25TJ, JUNCTION TEMPERATURE (0 25 50 75 100 °C)125 150 © 0.4-50-50 Ecce T-25J, JUNCTION TEMPERATURE (0-25J, JUNCTION TEMPERATURE (0J, JUNCTION TEMPERATURE (0, JUNCTION TEMPERATURE (0(°C) 25 50 75 100 F (°C) 125 S\ 150<br>Figure 7 On-Resistance Variation with Temperature Figure 8 Gate Threshold Variation vs. Junction Temperature<br>30 10000<br>f=1MHz<br>25 ME| Ciss<br>20<br>15 T J  = 150°C TJ = 25 ° C 1000<br>TJ = 125°C TJ = -55°C C oss<br>HE Ke<br>10 A SS<br>TJ = 85°C Crss<br>5 ef<br>[| P| | ff<br>0 7) 100<br>0 0.3 0.6 0.9 1.2 0 5 10 15 20 25 30<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS , DRAIN-SOURCE VOLTAGE (V)<br>Figure 9 Diode Forward Voltage vs. Current Figure 10 Typical Junction Capacitance<br>10 1000<br>R DS(on)<br>Limited<br>8 100 PW = 100µs<br>6 VDS = -15V 10<br>ID = -11.5A<br>DC<br>4 1 PW = 10s PW = 1s<br>PW = 100ms<br>T  = 150°C<br>J(m ax) PW = 10ms<br>2 0.1 TC = 25°C PW = 1ms<br>VV GS GS = 4.5V= -4.5V<br>Single Pulse<br>00 Ae 10 20 30 40 50 60 70 80 90 0.010.1DUT on 1 * MRP Board es 1 a 10 100<br>Q g, TOTAL GATE CHARGE (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11 Gate Charge Figure 12 SOA, Safe Operation Area<br>)Ω<br>, DRAIN-SOURCE ON-RESISTANCE ( , GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>DS(ON)<br>R<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, DRAIN CURRENT (A)<br>ID<br>, GATE SOURCE VOLTAGE (V)<br> GATE THRESHOLD VOLTAGE (V)<br>GS<br>VGS<br>V<br>**----- End of picture text -----**<br>


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1.8<br>V)V<br>E(E 1.6 TT<br>G<br>TAT<br>1.4<br>VOVLOV<br>=AA<br>LDL<br>O 1.2 ID= -1mA D= -1mA = -1mA<br>H<br>S<br>RER IDD = -250µA<br>H = H H 1 SA<br>T<br>BEERNNGE<br>TET<br>A - PTT PTT NNO<br>G 0.8<br>, h))<br>GSG(SGt(SG 0.6 -PCCCENS<br>V<br>\<br>© 0.4-50-50 Ecce 0 25 50 75 100 F 125 S\ 150<br>T-25J, JUNCTION TEMPERATURE (0-25J, JUNCTION TEMPERATURE (0J, JUNCTION TEMPERATURE (0, JUNCTION TEMPERATURE (0(°C)<br>Figure 8 Gate Threshold Variation vs. Junction Temperature<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1<br>Pe D = 0.9 rr<br>Se D = 0.7<br>D = 0.5 nase ap eee ee eg eee ena<br>Se [re] eer ttt<br>D = 0.3 ST a A<br>aR SM<br>0.1 LMM D = 0.1 UI CYrrmr TN LAIN ETT<br>[et et<br>eT ey<br>Ey D = 0.05  ETT ATI<br>EE 72<br>D = 0.02<br>Gf<br>0.01 D = 0.01<br>Poeee)<br>EEE HE Et tt HH<br>D = 0.005<br>FTI D = Single Pulse Het TTT R R Duty Cycle, D = t1 / t2  RR Duty Cycle, D = t1/ t2 θJAθJA  θ θ (t) = r(t)  JA JA = 93( = 93t) = r ℃ /W  °* (C/W  R t) * RθJA θJA HT]Al<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


5 of 7 **www.diodes.com** 

DMP3007LSS Document number: DS39753 Rev. 4 - 2 

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**DMP3007LSS** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**==> picture [490 x 241] intentionally omitted <==**

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SO-8<br>SO-8<br>E a Dim  Min  Max  Typ<br>A  1.40  1.50  1.45<br>A1  0.10  0.20  0.15<br>1<br>b  0.30  0.50  0.40<br>c  0.15  0.25  0.20<br>D  4.85  4.95  4.90<br>E  5.90 6.10 6.00<br>b<br>E1 E1  3.80 3.90 3.85<br>h E0  3.85 3.95 3.90<br>Q e  —  —  1.27<br>7° h  —  —  0.35<br>c L   0.62  0.82  0.72<br>A 4°±3° Q 0.60  0.70  0.65<br>G auge Plane All Dimensions in mm<br>S eating Plane<br>L<br>e A1 E0<br>D<br>All sides)<br>9° (<br>R 0.1<br>45°<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

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Please see http://www.diodes.com/package-outlines.html for the latest version.<br>SO-8<br>X1<br>Dimensions Value (in mm)<br>C  1.27<br>Y1 X  0.802<br>X1  4.612<br>Y  1.505<br>OE Y1  6.50<br>Y<br>gm C X<br>**----- End of picture text -----**<br>


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DMP3007LSS Document number: DS39753 Rev. 4 - 2 

August 2018 © Diodes Incorporated 

**DMP3007LSS** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

|A.   Life support devices or systems are devices or systems which:|A.   Life support devices or systems are devices or systems which:|
|---|---|
||1. are intended to implant into the body, or|



2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2018, Diodes Incorporated 

**www.diodes.com** 

7 of 7 **www.diodes.com** 

DMP3007LSS Document number: DS39753 Rev. 4 - 2 

August 2018 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMP3007LSS-13/power-mosfet-p-channel-30-v-14-a-4100-ohm-soic)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmp3007lss-13/mosfet-p-ch-30v-14a-soic/dp/3943746RL)
---

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