# Power MOSFET, P Channel, 250 V, 260 mA, 10 ohm, U-DFN2020, Surface Mount

![Product image](https://novapart.co/image/farnell:3680146/)

**URL**: https://novapart.co/products/DMP25H18DLFDE-7/power-mosfet-p-channel-250-v-260-ma-10-ohm-u
**SKU**: DMP25H18DLFDE-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4990
**Stock**: 500+
**Lead Time**: 134 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 1.4W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | U-DFN2020 |
| Drain Source Voltage Vds | 250V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 260mA |
| Drain Source On State Resistance | 10ohm |
| Gate Source Threshold Voltage Max | 1.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3680146/)

**DMP25H18DLFDE** fF **250V P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
|**BVDSS**<br>**RDS(ON) Max**<br>**ID Max**<br>**TA = +25°C**<br>-250V<br>14Ω @ VGS= -10V<br>-0.26A<br>18Ω@VGS= -3.5V<br>-0.23A|||
|**BVDSS**|**RDS(ON) Max**|**ID Max**<br>**TA = +25°C**|
|-250V|14Ω @ VGS= -10V|-0.26A|
||18Ω@VGS= -3.5V|-0.23A|



## **Description and Applications** 

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. 

## **Features and Benefits** 

   - 0.6mm Profile – Ideal for Low-Profile Applications 

   - PCB Footprint of 4mm[2] 

   - Low Gate Threshold Voltage 

   - Low On-Resistance 

   - **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

      - **Halogen and Antimony Free. “Green” Device (Note 3)** 

   - 

   - **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/** 

- General Purpose Interfacing Switch 

- Load Switching 

- Battery Management Application 

- Power Management Functions 

## **Mechanical Data** 

- Case: U-DFN2020-6 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 O **e4** 

- Weight: 0.0065 grams (Approximate) 

## **U-DFN2020-6 (Type E)** 

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Pin1<br>~~,<br>**----- End of picture text -----**<br>


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D<br>G<br>S<br>**----- End of picture text -----**<br>


Bottom View 

Pin Out Bottom View 

Equivalent Circuit 

## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|
|---|---|---|---|
|||||
|**Part Number**|**Marking**|**Reel Size(inches)**|**Quantity per Reel**|
|DMP25H18DLFDE-7|H8|7|3,000|
|DMP25H18DLFDE-13|H8|13|10,000|



Notes:        1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

1 of 8 **www.diodes.com** 

DMP25H18DLFDE Datasheet number: DS37298 Rev. 4 - 2 

October 2020 © Diodes Incorporated 

**DMP25H18DLFDE** 

## **Marking Information** 

## Site 1 

H8 = Product Type Marking Code **H8** \ YM = Date Code Marking Y = Year (ex: H = 2020) M = Month (ex: 9 = September) 

|Date Code Key<br>**Year**<br>**2014**<br>**…**<br>**2020**<br>**2021**<br>**2022**<br>**2023**<br>**2024**<br>**2025**<br>**2026**<br>**2027**<br>**2028**<br>**2029**<br>**Code**<br>B<br>…<br>H<br>I<br>J<br>K<br>L<br>M<br>N<br>O<br>P<br>R<br>**Month**<br>**Jan**<br>**Feb**<br>**Mar**<br>**Apr**<br>**May**<br>**Jun**<br>**Jul**<br>**Aug**<br>**Sep**<br>**Oct**<br>**Nov**<br>**Dec**<br>**Code**<br>1<br>2<br>3<br>4<br>5<br>6<br>7<br>8<br>9<br>O<br>N<br>D<br>Site 2<br>~~_——————~~<br>~~——~~<br>~~ee~~|
|---|



H8 = Product Type Marking Code YWX = Date Code Marking Y = Year (ex:  0 = 2020) W = Week (ex: a = Week 27; z Represents Week 52 and 53) X = Internal Code (ex: U = Monday) 

|Date Code Key|||||||||||
|---|---|---|---|---|---|---|---|---|---|---|
|**Year**<br>**Code**<br>~~_——~~|**2014**<br>4||**…**<br>**2020**<br>**2021**<br>**2022**<br>…<br>0<br>1<br>2<br>~~—~~|**2023**<br>**2024**<br>**2025**<br>3<br>4<br>5<br>~~— — — ~~|**2026**<br>6<br> ~~— ~~||**2027**<br>7<br> ~~— ~~|**2028**<br>8<br> ~~—~~||**2029**<br>9|
|**Week**<br>**1-26**<br>**27-52**<br>**53**<br>**Code**<br>A-Z<br>a-z<br>z<br>**Internal Code**<br>**Sun**<br>**Mon**<br>**Tue**<br>**Wed**<br>**Thu**<br>**Fri**<br>**Sat**<br>**Code**<br>T<br>U<br>V<br>W<br>X<br>Y<br>Z<br>~~ee~~<br>~~es~~<br>~~—~~<br>~~ee~~|||||||||||



2 of 8 **www.diodes.com** 

DMP25H18DLFDE Datasheet number: DS37298 Rev. 4 - 2 

October 2020 © Diodes Incorporated 

**DMP25H18DLFDE** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

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|||||||
|---|---|---|---|---|---|
|Characteristic|Symbol|Value|Unit|
|Drain-Source Voltage|VDSS|-250|V|
|Gate-Source Voltage|VGSS|±40|V|
|Steady|TA = +25°C|-0.26|
|Continuous Drain Current (Note 6) VGS = -10V|ID|A|
|State|TA = +70°C|-0.21|
|Pulsed Drain Current (10μs Pulse, Duty Cycle|≦|1%)|IDM|-1.0|A|
|Maximum Body Diode Continuous Current (Note 6)|IS|-0.26|A|

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## **Thermal Characteristics** 

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|||||
|---|---|---|---|
|Characteristic|Symbol|Value|Unit|
|(Note 5)|0.6|
|Total Power Dissipation|PD|W|
|(Note 6)|1.4|
|(Note 5)|191|
|Thermal Resistance, Junction to Ambient|RJA|
|(Note 6)|86|°C/W|
|Thermal Resistance, Junction to Case|(Note 6)|RJC|17|
|Operating and Storage Temperature Range|TJ, TSTG|-55 to +150|°C|

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## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

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||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Characteristic|Symbol|Min|Typ|Max|Unit|Test Condition|
|OFF CHARACTERISTICS (Note 7)|
|Drain-Source Breakdown Voltage|BVDSS|-250|—|—|V|VGS = 0V, ID = -1mA|
|es|Zero Gate Voltage Drain Current TJ = +25°C|IDSS|—|—|-1|µA|VDS = -250V, VGS = 0V|
|TD|Gate-Source Leakage|I|IGSS|(I|—|(I|—|(OO|±100|(OO|nA|(OO|VGS = ±40V, VDS = 0V|
|ON CHARACTERISTICS (Note 7)|
|ee|Gate Threshold Voltage|VGS(TH)|-0.5|-1.7|-2.5|V|VDS = VGS, ID = -1mA|
|10|14|VGS = -10V, ID = -200mA|
|Static Drain-Source On-Resistance|RDS(ON)|—|Ω|
|—————|13|18|VGS = -3.5V, ID = -100mA|
|a|
|ID|Diode Forward Voltage|V|I|SD|(OU|—|(RD|-0.8|(OO|-1.2|OO|V|(OO|VGS = 0V, IS = -200mA|
|DYNAMIC CHARACTERISTICS  (Note 8)|
|GN|Input Capacitance|Ciss|I|—|I|81|—|pF|VDS = -25V, VGS = 0V,|
|Output Capacitance|Coss|—|14|—|pF|
|f = 1.0MHz|
|Reverse Transfer Capacitance|Crss|—|4|—|pF|
|————|Gate Resistance|R|ee|g|—|13|—|Ω|VDS = 0V, V|ee|GS = 0V, f = 1MHz|
|Total Gate Charge  (VGS = -10V)|Qg|—|2.8|—|nC|
|Gate-Source Charge|Qgs|—|0.3|—|nC|VDS = -25V, ID = -200mA|
|ne|Gate-Drain Charge|Qgd|—|0.6|—|nC|
|GO|Turn-On Delay Time|tD(ON)|—|7.5|—|ns|
|Turn-On Rise Time|tR|—|25|—|ns|VDS = -30V, ID|= -200mA|
|Turn-Off Delay Time|tD(OFF)|—|124|—|ns|VGS = -10V, RG = 50Ω|
|Turn-Off Fall Time|tF|—|95|—|ns|
|———|ee|
|Reverse Recovery Time|tRR|—|85|—|ns|
|IF = -1.0A, di/dt = 100A/μs|
|ee|Reverse Recovery Charge|QRR|—|294|—|μC|
|Notes:|5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.|
|6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.|
|7. Short duration pulse test used to minimize self-heating effect.|

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8. Guaranteed by design. Not subject to production testing. 

3 of 8 **www.diodes.com** 

DMP25H18DLFDE Datasheet number: DS37298 Rev. 4 - 2 

October 2020 © Diodes Incorporated 

**DMP25H18DLFDE** 

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0.8 0.3<br>VGS = -20V VDS = -10V<br>0.7<br>VGS = -10V<br>0.6 haeTHOS 0.2 TTA = 25A = 85CC JipHf TA = 125TA = 150CC<br>0.5 VGS = -4.5V TA = -55C<br>BEER Aanp ve<br>0.4 VGS = -4.0V<br>0.3 geesfea V GS = -3.5V 0.1 (fTI<br>0.2 V GS = -3.0V<br>0.1 EG V GS = -2.5V VGS = -2.2V /<br>0.0 0<br>0 1 2 3 4 5 6 7 8 9 10 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6<br>VDS, DRAIN -SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristics Figure 2 Typical Transfer Characteristics<br>20 30<br>18 VGS = -4.5V TA = 150C<br>Pt | tT tt tt 25 ff te<br>16<br>14 VGS = -4.5V V GS = -10V 20 T A  = 125C<br>12 TA = 85C<br>eee ee<br>10 Ceara VGS = -20V 15 a<br>8 TA = 25C<br>FT yt | tT tt 10 Ty ] ft<br>6 Pt tT te tt a<br>TA = -55C<br>4<br>5<br>oo<br>2<br>0 0<br>0 CEE 0.1 0.2 0.3 0.4 0.5 ee 0.6 0.7 0.8 0 ett 0.1 0.2 0.3 ttt 0.4 0.5 0.6<br>ID, DRAIN SOURCE CURRENT (A) ID, DRAIN SOURCE CURRENT (A)<br>Figure 3 Typical On-Resistance vs.  Figure 4 Typical On-Resistance vs.<br>Drain Current and Gate Voltage  Drain Current and Temperature<br>2.4 30<br>2 V I DGS  =   = -10V -0.3A 25<br>VGS  -4.= 5V<br>20 I D   -0.2= A<br>1.6 V GS  = -4.5V<br>ID = -0.2A 15<br>VGS = -10V<br>1.2 VF TLLLLLE, ID  -0.3= A<br>10<br>Ty” nnn Sze<br>0.8 5<br>eet) ase cee<br>0.4 TLL) 0-50 ERR -25 0 25 50 75 100 125 150<br>-50 -25TJ, JUNCTION TEMPERATURE (0 25 50 75 100 C)125 150 = Figure 6 On-Resistance Variation with Temperature LETT TJ, JUNCTION TEMPERATURE (C)<br>Figure 5 On-Resistance Variation with Temperature<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>D<br>, DRAIN CURRENT (A)<br>I<br>DS(ON)<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


4 of 8 **www.diodes.com** 

DMP25H18DLFDE 

October 2020 © Diodes Incorporated 

Datasheet number: DS37298 Rev. 4 - 2 

**DMP25H18DLFDE** 

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1<br>2<br>0.9<br>1.8 |TTTT TTT. 0.8 |eeIE<br>0.7<br>1.6 NONSS -I D = 1mA ry 0.6 —I|<br>0.5<br>-ID = 250250μA 礎 TA= 150C<br>1.4 PP PND Cy 0.4 AE<br>0.3 TA= 125C T A = 25C<br>1.2 LE ELNawRNS 0.2 I T A = 85C 4 TA= -55C<br>0.1<br>1 LL ELLER NO 0 0 — BI 0.3 ye) 0.6 HI 0.9 1.2 1.5<br>-50 -25 0 25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE  ( °C癈 ) Figure 8 Diode Forward Voltage vs. CurrentVSD, SOURCE-DRAIN VOLTAGE (V)<br>Figure 7 Gate Threshold Variation vs. Ambient Temperature<br>1000 10<br>f = 1MHz<br>= 9 ee a<br>100 SSSCCE SSSEET C iss 87 esa<br>hE | | tT | |<br>6 VDS = -25V<br>ID = -200mA<br>=======— 5 ne<br>Coss 4<br>10 an een 4<br>\ 3 foa<br>C rss 2<br>=== =e TPL<br>1 —>—>—+———-}se + 10 ‘fFa| | | ]<br>0 5 10 15 20 25 30 35 40 0 0.5 1 1.5 2 2.5 3<br>VDS, DRAIN-SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)<br>Figure 9 Typical Junction Capacitance Figure 10 Gate-Charge Characteristics<br>10<br>RDS(on)<br>Limited<br>a a<br>1<br>0.1<br>DC<br>PW = 10s<br>P W = 1s<br>0.01 TTJ(max)A =  25  = 150癈°C150°C癈 PW “AYN  = 100ms PW = 10ms<br>VGS = 10V-10V P W = 1ms<br>DUT on 1 * MRP Board Single Pulse P W  = 100100μs祍<br>0.001 ei al LLL<br>| 10 100 1000<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11 SOA, Safe Operation Area<br>D<br>, DRAIN CURRENT (A)<br>I<br>GS(TH)<br>, GATE THRESHOLD VOLTAGE (V)<br>V<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>S<br>, SOURCE CURRENT (A)<br>I<br>, GATE-SOURCE VOLTAGE (V)<br>V<br>GS<br>**----- End of picture text -----**<br>


5 of 8 **www.diodes.com** 

DMP25H18DLFDE 

October 2020 © Diodes Incorporated 

Datasheet number: DS37298 Rev. 4 - 2 

**DMP25H18DLFDE** -——— 

## DIODES, 

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1 aee<br>SearSS D = 0.7D = 0.9 —— SS ae eeae<br>EE D = 0.5<br>ee<br>D = 0.3<br>PIT | ert TT<br>0.1 IEIPTI FTIATT IIE PTT<br> ) D = 0.1 UIT<br>EO eeee<br>D = 0.05<br>PT<br>EY A<br>LUPT D = 0.02 meA TIIE EAIPTT PTTI PITTTELPET<br>0.01 oS || | |<br>ee D = 0.01  ee 0 a a LL<br>D = 0.005<br>Po PEa RJA(t) = r(t) * RJA Hil<br>RJA =  19 21癈 ° C /W<br>Single Pulse<br>Duty Cycle, D = t1/ t2<br>0.001<br>0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIMES (sec)t1, PULSE DURATION TIME (sec)<br>Figure 12 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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DMP25H18DLFDE Datasheet number: DS37298 Rev. 4 - 2 

October 2020 © Diodes Incorporated 

**DMP25H18DLFDE** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **U-DFN2020-6 (Type E)** 

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U-DFN2020-6<br>A3<br>A1 Type E<br>A<br>Dim  Min  Max  Typ<br>A  0.57  0.63 0.60<br>l oool —_ A1  0 0.05 0.03<br>D A3  —  —  0.15<br>b 0.25 0.35 0.30<br>—— ——<br>b1  0.185 0.285 0.235<br>D  1.95 2.05 2.00<br>b1 K1 D2  0.85 1.05 0.95<br>D2 E  1.95 2.05 2.00<br>E E2 L 1 E2  1.40 1.60 1.50<br>L(2X) e —  —  0.65<br>L  0.25 0.35 0.30<br>K2<br>| Ho, 0)  ES L1  0.82  0.92  0.87<br>K1  —  —  0.305<br>Z(4X) e b(6X) K2  —  —  0.225<br>Z  —  —  0.20<br>lela = ESS<br>All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **U-DFN2020-6 (Type E)** 

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| X2 .<br>Y3 Y2 Y1<br>X1<br>oe<br>X(6x) VLU C Y (2x)<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value**<br>**(in mm)**|
|---|---|
|**C**|0.650|
|**X**|0.400|
|**X1**|0.285|
|**X2**|1.050|
|**Y**|0.500|
|**Y1**|0.920|
|**Y2**|1.600|
|**Y3**|2.300|



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DMP25H18DLFDE Datasheet number: DS37298 Rev. 4 - 2 

October 2020 © Diodes Incorporated 

**DMP25H18DLFDE** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2020, Diodes Incorporated 

**www.diodes.com** 

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DMP25H18DLFDE Datasheet number: DS37298 Rev. 4 - 2 

October 2020 © Diodes Incorporated 



## Links

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- [Supplier page](https://es.farnell.com/diodes-inc/dmp25h18dlfde-7/mosfet-p-ch-250v-0-26a-u-dfn2020/dp/3680146)
---

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