# Power MOSFET, P Channel, 20 V, 430 mA, 0.7 ohm, SOT-523, Surface Mount

![Product image](https://novapart.co/image/farnell:3943741RL/)

**URL**: https://novapart.co/products/DMP22D6UT-7/power-mosfet-p-channel-20-v-430-ma-07-ohm-sot-523
**SKU**: DMP22D6UT-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1070
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 150mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SOT-523 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 430mA |
| Drain Source On State Resistance | 0.7ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943741RL/)

**DMP22D6UT** 

**P-CHANNEL ENHANCEMENT MODE MOSFET** 

Please click here to visit our online spice models database. 

## **Features** 

- Low On-Resistance 

- Low Gate Threshold Voltage 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- **Lead Free By Design/RoHS Compliant (Note 2)** 

- **ESD Protected Gate** 

- **"Green" Device (Note 4)** 

- **Qualified to AEC-Q101 standards for High Reliability** 

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ESD PROTECTED<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
TOP VIEW<br>**----- End of picture text -----**<br>


## **Mechanical Data** 

- Case: SOT-523 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020D 

- Terminals: Finish - Matte Tin annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 

- Terminal Connections: See Diagram 

- Marking Information: See Page 3 

- Ordering Information: See Page 3 

   - Weight: 0.002 grams (approximate) 

- 

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Drain<br>SOT-523<br>D<br>Gate<br>   Gate G S<br>  Protection Source<br>   Diode<br>Equivalent Circuit TOP VIEW<br>**----- End of picture text -----**<br>


## **Maximum Ratings** @TA = 25°C unless otherwise specified 

|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol **|**Value**|**Units**|
|Drain-Source Voltage||VDSS|-20|V|
|Gate-Source Voltage||VGSS|±8|V|
|Drain Current (Note 1)<br>Steady<br>State|Steady<br>State<br>TA= 25°C<br>TA= 85°C|ID|-430<br>-310|mA|
|Pulsed Drain Current(Note 3)||IDM|-750|mA|



**Thermal Characteristics** @TA = 25°C unless otherwise specified 

|**Thermal Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|||
|---|---|---|---|
|**Characteristic**|**Symbol **|**Value**|**Units**|
|Total Power Dissipation(Note 1)|PD|150|mW|
|Thermal Resistance,Junction to Ambient|RθJA|833|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



**Electrical Characteristics** @TA = 25°C unless otherwise specified 

|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~a~~<br>~~TT~~|**Symbol **<br>~~a~~|**Min**<br>~~a~~|**Typ**<br>~~a~~|**Max **<br>~~a~~|**Unit**<br>~~a~~|**Test Condition **<br>~~a~~|
|**OFFCHARACTERISTICS (Note 5)**<br>~~TT~~<br>~~Re~~|||||||
|Drain-Source Breakdown Voltage<br>~~TT~~<br>~~Re~~|BVDSS<br>|-20<br>|⎯<br>|⎯<br><br>~~GO~~|V<br><br>~~GO~~|VGS= 0V,ID= -250mA<br>|
|Zero Gate Voltage Drain Current<br>~~ReGG~~|IDSS<br>~~GG~~|⎯<br>~~GG~~<br>~~GG~~|⎯<br>~~GG~~<br>~~GG~~|-1.0<br>~~GG~~<br>~~GO~~<br>~~GG~~|μA<br>~~GG~~<br>~~GO~~<br>~~OO~~|VDS= -20V,VGS= 0V<br>~~GG~~<br>~~OO~~|
|Gate-Source Leakage<br>~~ee~~|IGSS<br>~~ee~~|⎯<br>~~ee~~<br>~~GG~~|⎯<br>~~ee~~<br>~~GG~~|±1.0<br>~~GO~~<br>~~ee~~<br>~~GG~~|μA<br>~~GO~~<br>~~ee~~<br>~~OO~~|VGS=±4.5V,VDS= 0V<br>~~ee~~<br>~~OO~~|
|**ON CHARACTERISTICS (Note 5)**<br>~~GG~~<br>~~OO~~<br>~~TO~~<br>~~GOPo~~|||||||
|Gate Threshold Voltage<br>~~GG~~|VGS(th)<br>~~GG~~|-0.5<br>~~GG~~|⎯<br>~~GG~~|-1.0<br>~~GG~~<br>~~GO~~|V<br>~~GG~~<br>~~GO~~|VDS= VGS,ID= -250μA<br>~~GG~~<br>~~Po~~|
|Static Drain-Source On-Resistance<br>~~ee~~|GS(th)<br>RDS (ON)<br>~~Ge~~|⎯<br>~~Ge~~|0.7<br>1.1<br>1.7<br>~~GG~~|1.1<br>1.6<br>2.6<br>~~GO~~<br>~~GG~~|Ω<br>~~GO ~~<br>~~QO~~|VGS= -4.5V,ID= -430mA<br> ~~Po~~|
|||||||VGS= -2.5V,ID= -300mA<br>~~Po~~|
|||||||VGS= -1.8V,ID= -150mA<br>~~po~~|
|Forward Transfer Admittance<br>~~ee~~<br>~~ee~~||Yfs|<br>~~ee~~<br>~~Ge~~|200<br>~~ee~~<br>~~Ge~~|⎯<br>~~ee~~<br>~~GG~~|⎯<br>~~ee~~<br>~~GG~~|ms<br>~~ee~~<br>~~QO~~|VDS=10V,ID= 0.2A<br>~~po~~<br>~~ee~~|
|Diode Forward Voltage(Note 5)<br>~~ee~~|VSD<br>~~Ge~~|⎯<br>~~Ge~~<br>~~Gf~~|⎯<br>~~GG~~<br>~~Gf~~|-1.4<br>~~GG~~<br>~~Gf~~|V<br>~~QO~~<br>~~Gf~~|VGS= 0V,IS= -115mA|
|**DYNAMIC CHARACTERISTICS**<br>~~GeGG~~<br>~~QO~~<br>~~ee~~<br>~~OO~~|||||||
|Input Capacitance<br>~~OO~~<br>~~a~~|Ciss<br>~~OO~~|⎯<br>~~OO~~|⎯<br>~~OO~~|175<br>~~OO~~|pF<br>~~OO~~|VDS= -16V, VGS= 0V<br>f = 1.0MHz<br>~~OO~~|
|Output Capacitance<br>~~a~~<br>~~ee~~|Coss<br>~~ee~~|⎯<br>~~ee~~|⎯<br>~~ee~~|30<br>~~ee~~|pF<br>~~ee~~||
|Reverse Transfer Capacitance<br>~~ee~~|Crss<br>~~ee~~|⎯<br>~~ee~~|⎯<br>~~ee~~|20<br>~~ee~~|pF<br>~~ee~~||



Notes: 1. Device mounted on FR-4 PCB. 2. No purposefully added lead. 

3. Pulse width ≤10μS, Duty Cycle ≤1% 

4. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 

5. Short duration pulse test used to minimize self-heating effect. 

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DMP22D6UT Document number: DS31585 Rev. 2 - 2 

November 2008 © Diodes Incorporated 

**DMP22D6UT** 

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= - 0V<br>|__| 0<br>| Bane | T| H<br>au<br>feaaac=aae<br>‘ l,<br>ms /——.<br>= A.<br>° cree<br>0 _ Se=mTa T<br>. 0 annsanecce<br>-VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 1  Typical Output Characteristics<br>, DRAIN CURRENT (A)-ID , DRAIN CURRENT (A)-ID<br>**----- End of picture text -----**<br>


-VGS, GATE-SOURCE VOLTAGE (V) Fig. 2  Typical Transfer Characteristics 

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am 0 . 5 eh Se<br>——SEJ} | |<br>“ |_| a | | =<br>Soe<br>|<br>0 .4 OD2 | | | || || |<br>0°. 3- 50 HCHe|| s ||50 75 to '<br>TA, AMBIENT TEMPERATURE (°C)<br>Fig. 3  Gate Threshold Voltage vs. Ambient Temperature<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(th)<br>-V<br>**----- End of picture text -----**<br>


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im<br>0 4 al | fil .<br>0 . ; ‘4<br>cf | 0.1<br>-ID, DRAIN-SOURCE CURRENT (A)<br>Fig. 4  Static Drain-Source On-Resistance vs. Drain Current<br>**----- End of picture text -----**<br>


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-ID, DRAIN-SOURCE CURRENT (A)<br>Fig. 5  Static Drain-Source On-Resistance<br>vs. Drain Current<br>**----- End of picture text -----**<br>


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oi 1 10<br>-ID, DRAIN-SOURCE CURRENT (A)<br>Fig. 6  Static Drain-Source On-Resistance vs.<br>Drain-Source Current<br>**----- End of picture text -----**<br>


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DMP22D6UT Document number: DS31585 Rev. 2 - 2 

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**DMP22D6UT** 

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TA, AMBIENT TEMPERATURE (°C)<br>Fig. 7  Static Drain-Source On-State Resistance<br>vs. Ambient Temperature<br>**----- End of picture text -----**<br>


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-ID, DRAIN CURRENT (A)<br>Fig. 9  Forward Transfer Admittance vs. Drain Current<br>**----- End of picture text -----**<br>


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-VDS, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 8  Reverse Drain Current vs. Source-Drain Voltage<br>**----- End of picture text -----**<br>


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120150 \ 7<br>90 NG —— |<br>60<br>\<br>30<br>_ Coss pf<br>0 | T lee S FT<br>0 2 4 6 eiae<br>-VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 10  Typical Capacitance<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 6) 

|**Ordering Informationg Information Information** (Note 6)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMP22D6UT-7|SOT-523|3000/Tape &Reel|



Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 

## **Marking Information** 

|||||||||||||PBA = Product Type Marking Code|PBA = Product Type Marking Code|PBA = Product Type Marking Code||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||||||**PBA**||**YM**||||YM = Date Code Marking<br>Y = Year (ex: V = 2008)||||||||
|||||||||||||M = Month (ex: 9 = September)||||||||
|||||||||||||||||||||
|Date CodeKey||||||||||||||||||||
|**Year**|**2008**|||**2009**|||||**2010**|||**2011**<br>**2012**|||**2013**|**2014**|||**2015**|
|**Code**|V||||W||||X|||Y<br>Z|||A|B|||C|
|||||||||||||||||||||
|**Month**|**Jan**|**Feb**||||**Mar**||**Apr**||||**May**<br>**Jun**<br>**Jul**|**Aug**||**Sep**|**Oct**|**Nov**||**Dec**|
|**Code**|1|2||||3||4||||5<br>6<br>7|8||9|O|N||D|



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DMP22D6UT<br>Document number: DS31585 Rev. 2 - 2<br>**----- End of picture text -----**<br>


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**DMP22D6UT** 

## **Package Outline Dimensions** 

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A<br>SOT-523<br>Dim  Min  Max  Typ<br>A  0.15 0.30 0.22<br>B C B  0.75 0.85 0.80<br>C 1.45 1.75 1.60<br>D  ⎯  ⎯  0.50<br>sein G ==== G  0.90  1.10  1.00<br>H H  1.50 1.70 1.60<br>J 0.00 0.10 0.05<br>K N M K  0.60 0.80 0.75<br>L  0.10 0.30 0.22<br>M  0.10  0.20  0.12<br>J<br>D L N  0.45  0.65  0.50<br>α 0°  8°  ⎯<br>ee ee ee<br>All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

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Y<br>Dimensions Value (in mm)<br>Z  1.8<br>Z<br>TE C X  0.4<br>Y  0.51<br>C 1.3<br>E  0.7<br>X E<br>ojosRab<br>**----- End of picture text -----**<br>


## IMPORTANT NOTICE 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. 

LIFE SUPPORT 

Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. 

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DMP22D6UT Document number: DS31585 Rev. 2 - 2 

November 2008 © Diodes Incorporated 



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- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmp22d6ut-7/mosfet-p-ch-20v-0-43a-sot-523/dp/3943741RL)
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