# Power MOSFET, P Channel, 20 V, 1.14 A, 0.495 ohm, X1-DFN1212, Surface Mount

![Product image](https://novapart.co/image/farnell:3943734/)

**URL**: https://novapart.co/products/DMP21D0UFD-7/power-mosfet-p-channel-20-v-114-a-0495-ohm-x1
**SKU**: DMP21D0UFD-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0820
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 930mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | X1-DFN1212 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 1.14A |
| Drain Source On State Resistance | 0.495ohm |
| Gate Source Threshold Voltage Max | 700mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943734/)

**A Product Line of Diodes Incorporated DMP21D0UFD** [| **20V P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
|**V(BR)DSS**<br>**RDS(on) Max**<br>**ID max**<br>TA= 25°C<br>(Notes4)<br>-20V<br>495mΩ @VGS= -4.5V<br>-1.14A<br>730mΩ @VGS= -2.5V<br>-0.94A<br>960mΩ @VGS= -1.8V<br>-0.85A<br>1300mΩ @VGS= -1.5V<br>-0.75A|||
|**V(BR)DSS**|**RDS(on) Max**|**ID max**<br>TA= 25°C<br>(Notes4)|
|-20V|495mΩ @VGS= -4.5V|-1.14A|
||730mΩ @VGS= -2.5V|-0.94A|
||960mΩ @VGS= -1.8V|-0.85A|
||1300mΩ @VGS= -1.5V|-0.75A|



## **Features and Benefits** 

- Low Gate Threshold Voltage 

- Fast Switching Speed 

- **ESD Protected Gate 3KV** 

- **Totally Lead-Free & Fully RoHS compliant (Note 1)** 

- • **Halogen and Antimony Free. “Green” Device (Note 2)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Mechanical Data** 

## **Description and Applications** 

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

- Portable electronics 

- Case: X1-DFN1212-3 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish – NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 

- Weight: 0.005 grams (approximate) 

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Drain<br>X1-DFN1212-3<br>S<br>Gate<br>D<br>Gate<br>Protection G<br>Diode Source<br>ZA oo &<br>ESD PROTECTED TO 3kV Top View  Bottom View<br>Equivalent Circuit  Pin-out Top view<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 3) 

|**Part Number**|**Marking**|**Reel size(inches)**|**Tape width(mm)**|**Quantity per reel**|
|---|---|---|---|---|
|DMP21D0UFD-7|K21|7|8|3000|



Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

3. For packaging details, go to our website at http://www.diodes.com. 

## **Marking Information** 

||||||||**K21**<br>**YM**<br>_||**K21**<br>**YM**<br>_||**K21**<br>**YM**<br>_||K21 = Product Type Marking Code<br>YM = Date Code Marking<br>Y = Year (ex: Y = 2011)<br>M = Month (ex: 9 = September)|K21 = Product Type Marking Code<br>YM = Date Code Marking<br>Y = Year (ex: Y = 2011)<br>M = Month (ex: 9 = September)|K21 = Product Type Marking Code|||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Date Code Key<br>**Year**<br>**Code**<br>~~Ce a~~||**2011**<br>Y<br>~~a~~||||**2012**<br>Z|||**2013**<br>A|**2014**<br>**2015**<br>B<br>C||||**2016**<br>D|||**2017**<br>E||
|**Month**<br>**Jan**<br>**Code**<br>1<br>~~a~~||||**Feb**<br>2||**Mar**<br>3|**Apr**<br>4||**May**<br>5|**Jun**<br>**Jul**<br>**Aug**<br>6<br>7<br>8||**Sep**<br>9||**Oct**<br>O||**Nov**<br>N||**Dec**<br>D|



1 of 8 **www.diodes.com** 

DMP21D0UFD Datasheet Number: DS35364 Rev. 4 - 2 

March 2012 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** | ZETEX **DMP21D0UFD** ~~fT~~ 

|**Maximum Ratings** @TA= 25°C unless otherwise specified|**Maximum Ratings** @TA= 25°C unless otherwise specified|**Maximum Ratings** @TA= 25°C unless otherwise specified|= 25°C unless otherwise specified|||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|-20|V|
|Gate-Source Voltage|||VGSS|±8|V|
|Continuous Drain Current|Steady<br>State|TA = 25°C(Note 4)|ID|-1.14|A|
|||TA = 85°C(Note 4)||-0.83||
|||TA = 25°C(Note 5)||-0.82||
|Pulsed Drain Current(Note 6)|||IDM|-4.0|A|



## **Thermal Characteristics** @TA = 25°C unless otherwise specified 

|**Thermal Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Thermal Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Power Dissipation|(Note 4)|PD|930|mW|
||(Note 5)||490|mW|
|Thermal Resistance, Junction to Ambient|(Note4)|RθJA|135|°C/W|
||(Note 5)||256|°C/W|
|Operatingand Storage Temperature Range||TJ, TSTG|-55 to +150|°C|



Notes: 4. For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of 2oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 

5. Same as note 4, except the device is mounted on minimum recommended pad layout **.** 

6. Device mounted on minimum recommended pad layout test board, 10µs pulse duty cycle = 1%. 

2 of 8 **www.diodes.com** 

DMP21D0UFD Datasheet Number: DS35364 Rev. 4 - 2 

March 2012 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**DMP21D0UFD** 

## **Thermal Characteristics** 

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**----- Start of picture text -----**<br>
10 10<br>9 I " 1 Single Pulse R θJA  = 136°C/W SSS—_——— -I D (A) @P W =1ms mdieebred RLimitedDS(ON)<br>RθJA (t) =  RθJA*r(t)<br>8 | T J  - T A  = P*R θJA Zk — a<br>1<br>7 LT TTT ee—ifor FEANI 38SNN SSSNASANSESSUTE osNNSIErr<br>65 ATU TIME ENT TTA TMT 0.1 =—— ei LASSTASSNUSNENET<br>4 LOT EI TEMA a—SSS co TTSSeSNaePN<br>\ |rs eeI a [| a |<br>3 \ re ee [| |<br>0.01<br>IN Ee alill| ee<br>2 a a X A Seaside1 NS SS ||<br>DN NU TJ(MAX) = 150°C a | Sees<br>1 LN TE| T A  = 25°C | -ID(A) @ | |<br>noth AT Single Pulse to—eetitioe Coat P W =10µs<br>0 CTI UIE UT IE TTINE EVIE 0.001 Ph<br>0.0001 0.001 0.01 0.1 1 10 100 1000 0.1 1 10 100<br>t1, PULSE DURATION TIME (sec) -VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 1  Single Pulse Maximum Power Dissipation Fig. 2 SOA, Safe Operation Area<br>1 ssseee ||<br>a<br>eee D = 0.7 oe ni |<br>D = 0.5<br>FHT IT IIIT<br>et D = 0.3 10 comm LI TIT ITT TPT PET<br>a D = 0.9<br>eye<br>0.1 LoyEEEa D = 0.1 a REa e/aSea [/][ A] Marces ri ce se py<br>FT<br>D = 0.05<br>TUT 0 0 |<br>00 a 7<br>ee AEE|<br>D = 0.02<br>0.01 LUI<br>SeenES D = ferret  0.01 ist | a A TTiste eeeTACITeeA UTAITEeeeTT EUTTIEeeeETIee<br>D = 0.005 ITAL TP R θJA (t) = r(t) * R θJA LT<br>SS Et R θJA = 54°C/W mahi<br>Duty Cycle, D = t1/ t2<br>Single Pulse<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIMES (sec)<br>Fig. 3 Transient Thermal Resistance<br>-I (A) @ DC   =10s<br>-I (A) @P-I (A) @P =1s=100ms<br>-I (A) @P =10ms<br>-I (A) @P<br>D<br>W<br>D W<br>D<br>W<br>D<br>W<br>D<br>-I<br>(A) @P<br>=100µs<br>D<br>, DRAIN CURRENT (A) W<br>ID<br>P(pk), PEAK TRANSIENT POWER (W)<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


3 of 8 **www.diodes.com** 

DMP21D0UFD Datasheet Number: DS35364 Rev. 4 - 2 

March 2012 © Diodes Incorporated 

## **A Product Line of Diodes Incorporated** | ZETEX **DMP21D0UFD** | 

## **Electrical Characteristics** @TA = 25°C unless otherwise specified 

|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic **|**Symbol **|**Min**|**Typ **|**Max **|**Unit **|**Test Condition **|
|**OFFCHARACTERISTICS (Note 7) **|||||||
|Drain-Source Breakdown Voltage|BVDSS|-20|-|-|V|VGS= 0V,ID= -250μA|
|Zero Gate Voltage Drain Current TJ= 25°C|IDSS|-|-|-1|μA|VDS= -20V,VGS= 0V|
|Gate-Source Leakage|IGSS|-|-|±10|μA|VGS= ±8V,VDS= 0V|
|**ON CHARACTERISTICS(Note 7) **|||||||
|Gate Threshold Voltage|VGS(th)|-0.45|-0.7|-1.2|V|VDS= VGS,ID= -250μA|
|Static Drain-Source On-Resistance<br>~~EE~~|RDS (ON)<br>~~EE~~|-<br>~~EE~~|-<br>~~EE~~|495<br>~~EE~~|mΩ<br>~~EE~~|VGS= -4.5V,ID= -800mA<br>~~EE~~|
|||||730<br>~~EE~~||VGS= -2.5V,ID= -700mA<br>~~EE~~|
|||||960<br>~~EE~~||VGS= -1.8V,ID= -100mA<br>~~EE~~|
|||||1300<br>~~EE~~||VGS= -1.5V,ID= -100mA<br>~~EE~~|
|Forward Transfer Admittance<br>~~EE~~||Yfs|<br>~~EE~~|50<br>~~EE~~|-<br>~~EE~~|-<br>~~EE~~|mS<br>~~EE~~|VDS= -3V,ID= -300mA<br>~~EE~~|
|Diode Forward Voltage|VSD|-|-|-1.2|V|VGS= 0V,IS= -300mA|
|**DYNAMIC CHARACTERISTICS**<br>~~a~~|||||||
|Input Capacitance<br>~~———~~|Ciss<br>~~———~~|-<br>~~———~~<br>~~a~~|76.5<br>~~———~~<br>~~a~~|-<br>~~———~~<br>~~a~~|pF<br>~~———~~|VDS= -10V, VGS= 0V,<br>f = 1.0MHz<br>~~———~~|
|Output Capacitance<br>~~———~~|Coss<br>~~———~~|-<br>~~———~~<br>~~a~~|13.7<br>~~———~~<br>~~a~~|-<br>~~———~~<br>~~a~~|pF<br>~~———~~||
|Reverse Transfer Capacitance<br>~~———~~|Crss<br>~~———~~|-<br>~~———~~<br>~~a~~|10.7<br>~~———~~<br>~~a~~|-<br>~~———~~<br>~~a~~|pF<br>~~———~~||
|Gate Resistance<br>~~———~~|Rg<br>~~———~~|-<br>~~———~~<br>~~a~~|195<br>~~———~~<br>~~a~~|-<br>~~———~~<br>~~a~~|Ω<br>~~———~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~———~~|
|Total Gate Charge(Note 8)|Qg|-<br>~~a~~|1.5<br>~~a~~|-<br>~~a~~|nC|VGS= -8V,VDS= -15V,ID= -1A|
|Total Gate Charge(Note 8)|Qg|-|1.0|-|nC|VGS= -4.5V, VDS= -15V,<br>ID= -1A<br>~~ee~~|
|Gate-Source Charge|Qgs|-|0.2|-|nC||
|Gate-Drain Charge<br>~~——<—<—~~|Qgd|-|0.3|-<br>~~ee~~|nC<br>~~ee~~||
|Turn-On DelayTime<br>~~——<—<—~~|tD(on)|-|7.1|-<br>~~ee~~|ns<br>~~ee~~|VDS= -10V, -ID = 1A<br>VGS= -4.5V, RG= 6Ω<br>~~ee~~|
|Turn-On Rise Time<br>~~——<—<—~~|tr|-|8.0|-<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off DelayTime<br>~~——<—<—~~|tD(off)|-|31.7|-<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~——<—<—~~|tf|-|18.5|-<br>~~ee~~|ns<br>~~ee~~||



Notes: 7. Short duration pulse test used to minimize self-heating effect. 8. Guarantee by design. 

**==> picture [203 x 206] intentionally omitted <==**

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2.0<br>VGS = -4.5V<br>VGS = -4.0V<br>VGS = -3.0V<br>1.5 V GS  = -2.5V<br>VGS = -2.0V<br>1.0 V GS  = -1.8V<br>0.5 V GS  = -1.5V<br>VGS = -1.2V<br>0<br>0 1 2 3 4 5<br>-VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 4 Typical Output Characteristic<br>, DRAIN CURRENT (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


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2.0<br>1.5 V DS  = -5V<br>1.0<br>0.5<br>TA = 150°C<br>TA = 125°C TA = 85°C<br>TA = 25°C<br>0 TA = -55°C<br>0 0.5 1.0 1.5 2.0 2.5 3.0<br>-VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 5 Typical Transfer Characteristic<br>, DRAIN CURRENT (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


4 of 8 **www.diodes.com** 

DMP21D0UFD Datasheet Number: DS35364 Rev. 4 - 2 

March 2012 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**==> picture [500 x 700] intentionally omitted <==**

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DMP21D0UFD<br>1.0 1.0<br>VGS = -1.5V<br>VGS = -4.5V<br>0.8 0.8<br>VGS = -1.8V<br>0.6 0.6<br>j TA = 125°C a TA = 150°C<br>V GS  = -2.5V<br>0.4 0.4<br>TA = 85°C<br>icoaoeenie VGS = -4.5V ——— TA = 25°C<br>0.2 0.2<br>TA = -55°C<br>0 0<br>0 0.4 0.8 1.2 1.6 2.0 0 0.2 0.4 0.6 0.8 1.0<br>-ID, DRAIN-SOURCE CURRENT (A) -ID, DRAIN CURRENT (A)<br>Fig. 6 Typical On-Resistance  Fig. 7 Typical On-Resistance<br>vs. Drain Current and Gate Voltage  vs. Drain Current and Temperature<br>1.2 1.6<br>TA = 150 ° C<br>VGS = -1.8V T A  = 150°C 1.4 VGS = -1.5V<br>1.0<br>TA = 125°C T A  = 125°C<br>1.2<br>0.8 TA = 85°C<br>T A = 85°C 1.0<br>TA = 25°C<br>0.6 TA = 25°C 0.8 TA = -55°C<br>=tt1 0.6<br>0.4 TA = -55°C<br>0.4<br>0.2<br>0.2<br>0 0<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 0.1 0.2 0.3 0.4 0.5 0.6<br>-ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A)<br>Fig. 8 Typical On-Resistance  Fig. 9 Typical On-Resistance<br>vs. Drain Current and Temperature vs. Drain Current and Temperature<br>1.7 1<br>0.9<br>1.5 IVDGS = 500mA = 5.0V 0.8 V GS  = -1.5V<br>VGS = 2.5V ID = -50mA<br>ID = 250mA 0.7<br>1.3<br>0.6<br>1.1 VIDGS = -50mA = -1.5V 0.5 VGS = 2.5V<br>VGS = -1.8V 0.4 ID = 250mA<br>ID = -100mA<br>0.9 0.3 V GS  = 5.0V<br>ID = -500mA<br>0.2<br>seal ——<br>0.7<br>0.1<br>0.5 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C)<br>Fig. 10 On-Resistance Variation with Temperature Fig. 11 On-Resistance Variation with Temperature<br>)Ω )Ω<br>, DRAIN-SOURCE ON-RESISTANCE ( ,  DRAIN-SOURCE ON-RESISTANCE (<br>RDS(ON) RDS(ON)<br>)Ω )Ω<br>,  DRAIN-SOURCE ON-RESISTANCE ( ,  DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>)Ω<br>, DRAIN-SOURCE<br>DSON<br>R<br>, DRAIN-SOURCE ON-RESISTANCE (<br>ON-RESISTANCE (NORMALIZED)<br>DSON<br>R<br>**----- End of picture text -----**<br>


5 of 8 

DMP21D0UFD Datasheet Number: DS35364 Rev. 4 - 2 

March 2012 © Diodes Incorporated 

**www.diodes.com** 

**A Product Line of Diodes Incorporated DMP21D0UFD** [| ~~sd~~ 

**==> picture [488 x 649] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.4 2.0<br>1.8<br>1.2<br>1.6<br>1.0 1.4<br>0.8 I D  = -1mA 1.2 T A  = 25°C<br>1.0<br>0.6 I D  = -250µA 0.8<br>0.4 0.6<br>0.4<br>0.2<br>0.2<br>0 se 0 J<br>-50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2<br>TA, AMBIENT TEMPERATURE (°C) -VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 12 Gate Threshold Variation vs. Ambient Temperature Fig. 13 Diode Forward Voltage vs. Current<br>10,000 100,000<br>10,000 TA = 150°C<br>1,000<br>T A  = 125°C<br>T A  = 150°C 1,000<br>100 TA = 125 ° C 100 TA = 85°C<br>ee ZEEE<br>T A  = 25°C<br>10 __Toe T A = 85°C 10 BE TA = -55°C<br>—— TA = 25°C 1<br>1 0.1<br>0 4 8 12 16 20 0 2 4 6 8<br>-VDS, DRAIN-SOURCE VOLTAGE (V)  VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 14 Typical Leakage Current vs. Drain-Source Voltage  Fig.15 Leakage Current vs. Gate-Source Voltage<br>100,000 1,000<br>f = 1MHz<br>10,000 TA = 150°C Sooo<br>TA = 125 ° C<br>1,000 100<br>C iss<br>——<br>100 TA = 85°C =<br>LE TA = 25°C C oss<br>10 TA = -55°C 10 Crss<br>Zn<br>1<br>0.1 1 a<br>0 2 4 6 8 0 2 4 6 8 10 12 14 16 18 20<br>VGS, GATE-SOURCE VOLTAGE (V) -VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig.16  Leakage Current vs. Gate-Source Voltage  Fig. 17 Typical Junction Capacitance<br>, SOURCE CURRENT (A)<br>S<br>-I<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>-V<br>, LEAKAGE CURRENT (nA)<br>, LEAKAGE CURRENT (nA)<br>DSS<br>-I IGSS<br>, LEAKAGE CURRENT (nA)<br>, JUNCTION CAPACITANCE (pF)<br>T<br>IGSS C<br>**----- End of picture text -----**<br>


6 of 8 **www.diodes.com** 

DMP21D0UFD Datasheet Number: DS35364 Rev. 4 - 2 

March 2012 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** | ZETEX **DMP21D0UFD** ~~Cd~~ 

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**----- Start of picture text -----**<br>
8 TT LELLLZ<br>7 PE LEEL<br>6<br>5<br>rearan Jdee<br>4 LL<br>3 TELIA |<br>2 nap 4nnee<br>ELE<br>10 JTL<br>0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>Qg, TOTAL GATE CHARGE (nC)<br>Fig. 18 Gate-Charge Characteristics<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>-V<br>**----- End of picture text -----**<br>


## **Package Outline Dimensions** 

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**----- Start of picture text -----**<br>
A<br>A3<br>oo} A1<br>D<br>e<br>C—CS=sd<br>b1<br>E (2x)<br>L<br>ia<br>at<br>b<br>**----- End of picture text -----**<br>


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X1-DFN1212-3<br>Dim Min Max Typ<br>A  0.47 0.53 0.50<br>A1  0 0.05 0.02<br>A3 -  -  0.13<br>b 0.27 0.37 0.32<br>b1  0.17 0.27 0.22<br>D  1.15 1.25 1.20<br>E  1.15 1.25 1.20<br>e -  -  0.80<br>L  0.25 0.35 0.30<br>All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

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**----- Start of picture text -----**<br>
X<br>Y Dimensions  Value (in mm)<br>C 0.80<br>X  0.42<br>Y2 X1 X1  0.32<br>(2x) Y  0.50<br>Y1  0.50<br>Y 1<br>Y2  1.50<br>( 2 x)<br>H eel<br>Ba ==<br>C<br>**----- End of picture text -----**<br>


7 of 8 

DMP21D0UFD Datasheet Number: DS35364 Rev. 4 - 2 

March 2012 © Diodes Incorporated 

**www.diodes.com** 

**A Product Line of Diodes Incorporated** | ZETEX **DMP21D0UFD** ~~fT~~ 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

A.   Life support devices or systems are devices or systems which: 

1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2012, Diodes Incorporated **www.diodes.com** 

8 of 8 **www.diodes.com** 

DMP21D0UFD Datasheet Number: DS35364 Rev. 4 - 2 

March 2012 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMP21D0UFD-7/power-mosfet-p-channel-20-v-114-a-0495-ohm-x1)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmp21d0ufd-7/mosfet-p-ch-20v-1-14a-x1-dfn1212/dp/3943734)
---

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