# Power MOSFET, P Channel, 20 V, 770 mA, 0.495 ohm, X2-DFN1006, Surface Mount

![Product image](https://novapart.co/image/farnell:3405190RL/)

**URL**: https://novapart.co/products/DMP21D0UFB4-7B/power-mosfet-p-channel-20-v-770-ma-0495-ohm-x2
**SKU**: DMP21D0UFB4-7B
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0820
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 430mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | X2-DFN1006 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 770mA |
| Drain Source On State Resistance | 0.495ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3405190RL/)

**DMP21D0UFB4** 

**20V P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON) MAX**|**ID MAX**<br>@ TA= +25°C|
|-20V|495mΩ @ VGS= -4.5V|-0.77A|
||690mΩ @ VGS = -2.5V|-0.67A|
||960mΩ @ VGS = -1.8V|-0.57A|



## **Description and Applications** 

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

## **Features and Benefits** 

- Footprint of just 0.6mm[2] – 13 Times Smaller than SOT23 

- 0.4mm Profile – Ideal for Low Profile Applications 

- Low Gate Threshold Voltage 

- Fast Switching Speed 

- ESD Protected Gate 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please** ~~|~~ **contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/** 

## **Mechanical Data** 

   - Case: X2-DFN1006-3 

- Portable Electronics 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 **e4** 

- 

Weight: 0.001 grams (Approximate) 

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ESD PROTECTED<br>**----- End of picture text -----**<br>


X2-DFN1006-3 

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Bottom View<br>**----- End of picture text -----**<br>


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D<br>S G<br>D<br>G<br>&<br>Gate Protection Diode S<br>Top View<br>Internal Schematic  Equivalent Circuit<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|
|---|---|---|---|---|---|
|||||||
|**Part Number**|**Marking**|**Reel Size(inches)**|**Tape Width(mm)**|**Tape Pitch(mm)**|**Quantity per Reel**|
|DMP21D0UFB4-7R|NO|7|8|4|3,000|
|DMP21D0UFB4-7B|NO|7|8|2|10,000|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

   2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

1 of 9 **www.diodes.com** 

DMP21D0UFB4 Datasheet number: DS35279 Rev. 5 - 2 

November 2019 © Diodes Incorporated 

**DMP21D0UFB4** 

## **Marking Information** 

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NO<br>Top View<br>Bar Denotes Gate and Source Side<br>DMP21D0UFB4-7R  NO = Part Marking Code<br>eee<br>os<br>NO<br>Top View<br>Bar Denotes Gate and Source Side  NO = Part Marking Code<br>DMP21D0UFB4-7B<br>eee ee<br>NO  NO  NO<br>NO  NO  NO<br>**----- End of picture text -----**<br>


2 of 9 **www.diodes.com** 

DMP21D0UFB4 Datasheet number: DS35279 Rev. 5 - 2 

November 2019 © Diodes Incorporated 

**DMP21D0UFB4** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage||VDSS|-20|V|
|Gate-Source Voltage||VGSS|±8|V|
|Continuous Drain Current<br>Steady<br>State|Steady<br>State<br>TA = +25°C(Note 5<br>TA = +85°C(Note 5<br>TA = +25°C(Note 6|Note 5)<br>ID<br>Note 5)<br>Note 6)|-0.77|A|
||||-0.55||
||||-1.17||
|Pulsed Drain Current(Note 7)||IDM|-5.0|A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Power Dissipation(Note 5)|PD|0.43|W|
|Power Dissipation(Note 6)|PD|0.99|W|
|Thermal Resistance,Junction to Ambient(Note 5)|RθJA|293|°C/W|
|Thermal Resistance,Junction to Ambient(Note 6)|RθJA|126|°C/W|
|Operatingand Storage Temperature Range|TJ, TSTG|-55 to +150|°C|



- Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 

   6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate. 

   7. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%. 

## **Thermal Characteristics** 

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10 \<br>9 PUENTE FUT UII TATE FET Single Pulse Single Pulse iil<br>RθJA RJA= 120 = 120 ℃ 癈/W /W<br>8 UNE EVI TI TATE FET RθJAR  (t) = r(t)  JA (t) = r(t) * R* RθJA JA iil<br>TJ T- TJ - TA = P* RA = P * RθJA(t) JA(t)<br>7 TAIN\ TAIN TI PTE iil<br>6 LIN \ LRTI UAT ETAT TTI ETI LTT<br>5<br>43 PENTPE SUT EHIME, ETE ETT<br>2 PETE TUMPMTSRE ETITIE ETTIET TITTIE ETTTTT,<br>1<br>0 EMTEee] |<br>0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (SEC)<br>Fig. 1 Single Pulse Maximum Power Dissipation<br>1 ee a ee === ———- = — one l nei<br>D = 0.7<br>D = 0.5<br>CT eer<br>a ce |<br>D = 0.3 D = 0.9<br>ST A<br>TT<br>0.1<br>D = 0.1<br>eer A re eC<br>D = 0.05<br>PeaTvAon RRR θJA R  θJA  JA (t) = r(t) JA(t) = r(t) = 120 = 120 ℃ *癈* R/W R/W θJAJA m Iialli<br>D = 0.02<br>0.01 UIE D = 0.01 TIENT P(pk) t1 ill<br>err AL re ee oe t——>| t2 EHH<br>D = 0.005 TJ - TA = P * RJA(t)<br>I LL [Ve] ae eeeITE TEee enTT | nnd Duty Cycle, D = t 1 /t 2 Coanmall<br>D = Single Pulse<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (s)<br>Fig. 2 Transient Thermal Response<br>P(pk), PEAK TRANSIENT POWER (W)<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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DMP21D0UFB4 Datasheet number: DS35279 Rev. 5 - 2 

November 2019 © Diodes Incorporated 

**DMP21D0UFB4** 

## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS**(Note 8)|||||||
|Drain-Source Breakdown Voltage|BVDSS|-20|—|—|V|VGS= 0V,ID= -250μA|
|Zero Gate Voltage Drain Current TJ= +25°C|IDSS|—|—|-1|μA|VDS= -20V,VGS= 0V|
|Gate-Source Leakage|IGSS|—|—|±10|μA|VGS= ±8V,VDS= 0V|
|**ON CHARACTERISTICS**(Note 8)|||||||
|Gate Threshold Voltage<br>~~ee~~|VGS(TH)<br>~~ee~~|-0.5<br>~~ee~~|-0.7<br>~~ee~~|-1.0<br>~~ee~~|V<br>~~ee~~|VDS= VGS,ID= -250μA<br>~~ee~~|
|Static Drain-Source On-Resistance<br>~~ee~~|RDS(ON)<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|495<br>~~ee~~|mΩ<br>~~ee~~|VGS= -4.5V,ID= -400mA<br>~~ee~~|
|||||690<br>~~ee~~||VGS= -2.5V,ID= -300mA<br>~~ee~~|
|||||960<br>~~ee~~||VGS= -1.8V,ID= -100mA<br>~~ee~~|
|Forward Transfer Admittance<br>~~ee~~||YFS|<br>~~ee~~|50<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|ms<br>~~ee~~|VDS= -3V,ID= -300mA<br>~~ee~~|
|Diode Forward Voltage|VSD|—|—|-1.2|V|VGS= 0V,IS= -300mA|
|**DYNAMIC CHARACTERISTICS**(Note 9)|||||||
|Input Capacitance<br>~~————~~|Ciss<br>~~————~~|—<br>~~————~~|76.5<br>~~————~~|—<br>~~————~~|pF<br>~~————~~|VDS= -10V, VGS= 0V,<br>f = 1.0MHz<br>~~————~~|
|Output Capacitance<br>~~————~~|Coss<br>~~————~~|—<br>~~————~~|13.7<br>~~————~~|—<br>~~————~~|pF<br>~~————~~||
|Reverse Transfer Capacitance<br>~~————~~|Crss<br>~~————~~|—<br>~~————~~|10.7<br>~~————~~|—<br>~~————~~|pF<br>~~————~~||
|Gate Resistance<br>~~————~~|Rg<br>~~————~~|—<br>~~————~~|195<br>~~————~~|—<br>~~————~~|Ω<br>~~————~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~————~~|
|Total Gate Charge|Qg|—|1.5|—|nC|VGS= -8V,VDS= -15V,ID= -1A|
|Total Gate Charge|Qg|—|1.0|—|nC|VGS= -4.5V, VDS= -15V,<br>ID= -1A<br>~~ee~~|
|Gate-Source Charge|Qgs|—|0.2|—|nC||
|Gate-Drain Charge<br>~~—<—_——~~|Qgd|—|0.3|—<br>~~ee~~|nC<br>~~ee~~||
|Turn-On DelayTime<br>~~—<—_——~~|tD(ON)|—|7.1|—<br>~~ee~~|ns<br>~~ee~~|VDS= -10V, -ID = 1A<br>VGS= -4.5V, Rg= 6Ω<br>~~ee~~|
|Turn-On Rise Time<br>~~—<—_——~~|tR|—|8.0|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off DelayTime<br>~~—<—_——~~|tD(OFF)|—|31.7|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~—<—_——~~|tF|—|18.5|—<br>~~ee~~|ns<br>~~ee~~||



Notes: 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 

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Typical Characteristics<br>2.0 2.0<br>VGS = -4.5V<br>VGS = -4.0V<br>VGS = -3.0V<br>1.5 V GS  = -2.5V 1.5 V DS  = -5V<br>VGS = -2.0V<br>1.0 f[— V GS  = -1.8V 1.0 pe<br>fone fe<br>0.5 VGS = -1.5V 0.5<br>| oie EPA TA T= 150°C A = 150癈<br>TTA A= 125°C  = 125癈 TTAA  = 85= 85°C 癈<br>TTAA  = 25= 25°C 癈<br>0 VGS = -1.2V 0 TTAA  =  -55-55°C 癈<br>0 1 2 3 4 5 0 0.5 1.0 1.5 2.0 2.5 3.0<br>-VDS, DRAIN-SOURCE VOLTAGE (V) -VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 3 Typical Output Characteristic Fig. 4 Typical Transfer Characteristic<br>, DRAIN CURRENT (A)<br>D<br>-I<br>D<br>, DRAIN CURRENT (A)<br>-I<br>**----- End of picture text -----**<br>


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DMP21D0UFB4 Datasheet number: DS35279 Rev. 5 - 2 

November 2019 © Diodes Incorporated 

**DMP21D0UFB4** 

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Typical Characteristics  (continued)<br>1.0 0.8<br>0.9 ee ae 0.7 V GS  = -4.5V<br>0.8 i ae<br>0.6<br>0.7 PF | A | ft<br>0.5<br>0.6 V GS  = -1.8V TTA A= 150°C  = 150癈<br>0.5 0.4 TA  T = 125°C A  = 125癈<br>0.4 V GS  = -2.5V 0.3 TA T= 85°C A = 85癈<br>TA T= 25°C A = 25癈<br>So<br>0.3<br>VGS = -4.5V 0.2 TT A A = -55°C  = -55癈<br>0.2 a<br>0.1 Pf 0.1<br>0 FPafeo=[| [| | ft 0 —<br>0 0.4 0.8 1.2 1.6 2.0 0 0.4 0.8 1.2 1.6 2.0<br>-ID, DRAIN-SOURCE CURRENT (A) -ID, DRAIN CURRENT (A)<br>Fig. 5 Typical On-Resistance  Fig. 6 Typical On-Resistance<br>vs. Drain Current and Gate Voltage  vs. Drain Current and Temperature<br>1.7 0.8<br>0.7<br>1.5 TT TTT) “LLL<br>0.6<br>1.3 0.5 V GS  = -2.5V<br>ID = -250mA<br>1.1 HA 0.4 ee<br>| LT<br>VGS = -5.0V<br>ID = -500mA 0.3<br>0.9<br>er VGS = -2.5V 0.2 gee I VDGS  = -500mA  = -5.0V eee<br>ID = -250mA<br>0.7<br>0.1<br>TT FRR tte<br>0.5 0<br>-50 PTE -25 0 25 LLL 50 75 100 EL 125 150 -50 ~CEEELLE -25 0 25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE  ( 癈°C ) TA, AMBIENT TEMPERATURE  ( 癈°C )<br>Fig. 7 On-Resistance Variation with Temperature Fig. 8 On-Resistance Variation with Temperature<br>1.4 2.0<br>1.8<br>1.2 eT | | tt td ee ee ee ee<br>1.6<br>1.0 CECE 1.4 i<br>0.8 I D  = -1mA 1.2 TTA  A = 25°C  = 25癈<br>SEEPEr ET} =  Ft 1.0<br>0.6 IIDD = -250=-250礎A<br>0.8<br>0.4 SSft tt ||et 0.6 ee e e<br>0.4<br>0.2<br>SERRE 0.2 ee<br>0 PLT ELE LLL 0 ee<br>-50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2<br>TA, AMBIENT TEMPERATURE ((°C) 癈 ) -VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 9 Gate Threshold Variation vs. Ambient Temperature Fig. 10 Diode Forward Voltage vs. Current<br>DS(ON)<br>R<br>DS(ON)<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>DRAIN-SOURCE<br>,<br>DSON<br>R<br>ON-RESISTANCE (NORMALIZED)<br>GS(TH)<br>, GATE THRESHOLD VOLTAGE (V)<br>-V<br>)<br>,  DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>S<br>, SOURCE CURRENT (A)<br>-I<br>DSON<br>)<br>DRAIN-SOURCE ON-RESISTANCE (<br>,<br>R<br>**----- End of picture text -----**<br>


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DMP21D0UFB4 Datasheet number: DS35279 Rev. 5 - 2 

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**www.diodes.com** 

**DMP21D0UFB4** [|sd 

## DreDES. 

## **Typical Characteristics** (continued) 

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10,000 ———————— 100,000 ————SSSS=<br>SO —— a |<br>a 10,000 —— | TTA A== 15 15 0 °癈C<br>1,000 TTA A= 125°C  = 125癈<br>TTA A= 150 = 150 ° 癈C  1,000<br>SS — Ne<br>100 TT AA = 12 55癈°C  100 TTA A= 85= 85°癈C<br>T AA = 25 癈°C<br>10 aee ee TTA A = 85= 85°C 癈 10 OfasOO TTAA  = --5555癈°C<br>TTA A= 25°C  = 25癈 1<br>a——— a | fo eefsee ee<br>1 0.1<br>ee ee ee es a ee<br>0 4 8 12 16 20 0 2 4 6 8<br>-VDS, DRAIN-SOURCE VOLTAGE (V)  -VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 11 Typical Leakage Current vs. Drain-Source Voltage  Fig.12 Leakage Current vs. Gate-Source Voltage<br>100,000 Bn Tn 4,000 aa<br>eS A SS OS CO |<br>f = 1MHz<br>a a | -—+—__}_+—_ +#_ + _ + +-—<br>10,000 TTA A = 150= 150°C 癈<br>|  __7"n a a<br>a T TA  A=  = 125  125° 癈 C  — | | | | | | [ | | fT |<br>1,000 aEZ OO Pt | tT | —et——————tT<br>Ciss<br>L A<br>100 T A A = 85= 85°C 癈<br>TTAA  = 25= 25°C 癈 C oss<br>10 TTAA  = -55= -55癈°C  Crss<br>a a K—+—_}+—_}+—_ +—_ + + + —_ + +<br>1 ee ee a<br>—————————a ee eee<br>a<br>0.1 GG 1<br>0 2 a 4 a 6 8 0 Pi 2 4 ETE 6 8  TET 10 12 14 16 yy 18 20<br>-VGS, GATE-SOURCE VOLTAGE (V) -VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig.13 Leakage Current vs. Gate-Source Voltage  Fig. 14 Typical Junction Capacitance<br>8<br>7 Ete ey<br>6<br>5 ieges J<br>4 TEAL<br>3 ELTA<br>2 ewe<br>TEP LLL<br>1<br>0<br>0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>Qg, TOTAL GATE CHARGE (nC)<br>Fig. 15 Gate-Charge Characteristics<br>GSS<br>, LEAKAGE CURRENT (nA)<br>I-<br>-<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, LEAKAGE CURRENT (nA)<br>IGSS<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>-V<br>, LEAKAGE CURRENT (nA)<br>-I<br>DSS<br>**----- End of picture text -----**<br>


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DMP21D0UFB4 Datasheet number: DS35279 Rev. 5 - 2 

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**DMP21D0UFB4** 

## **Package Outline Dimensions** 

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Please see http://www.diodes.com/package-outlines.html for the latest version.<br>X2-DFN1006-3<br>|<br>_<br>A A1<br>X2-DFN1006-3<br>Seating Plane Dim  Min  Max Typ<br>{te —— A   0.40  <br>D A1  0.00 0.05 0.03<br>— Pin #1 ID — | b a b  0.10 0.20 0.15<br>b2  0.45 0.55 0.50<br>_ | ——— D  0.95 1.05 1.00<br>E  0.55 0.65 0.60<br>e    0.35<br>E | b2 | =] e or L1  0.20 0.30 0.25<br>L2  0.20 0.30 0.25<br>L3    0.40<br>a rrr—idzY All Dimensions in mm z  0.02  0.08 0.05<br>ai s z |<br>oe L2 L3 L1<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **X2-DFN1006-3** 

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Y C<br>Y1<br>G2<br>iy]EI L<br>X G1<br>ae X1<br>**----- End of picture text -----**<br>


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Dimensions Value (in mm)<br>C 0.70<br>G1  0.30<br>G2  0.20<br>X  0.40<br>X1  1.10<br>Y  0.25<br>Y1  0.70<br>**----- End of picture text -----**<br>


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**DMP21D0UFB4** 

## **Embossed Carrier Tape Specifications** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

|**Tape Width (W)**|**Dimension**|**Value (mm)**|**Dimension**|**Value (mm)**|**Dimension**|**Value (mm)**|
|---|---|---|---|---|---|---|
|8mm|**B1**|4.5 max.|**F**|3.5±0.05|**P2**|2.0±0.05|
||**D**|1.5+0.10 -0.0|**K**|2.4 max.|**t**|0.40 max.|
||**D1**|0.35 min.|**P**|4.0±0.10<br>2.0±0.05(-7B)|**W**|8±0.30|
||**E**|1.75±0.10|**P0**|4.0±0.10|||
||**A0 B0 K0**|Determined by component size. The clearance between the component and the cavity must comply<br>to the rotational and lateral movement requirement provided in figures in the "Maximum Component<br>Movementin TapePocket”section.|||||



8 of 9 **www.diodes.com** 

DMP21D0UFB4 Datasheet number: DS35279 Rev. 5 - 2 

November 2019 © Diodes Incorporated 

**DMP21D0UFB4** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the        failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2019, Diodes Incorporated 

**www.diodes.com** 

9 of 9 **www.diodes.com** 

DMP21D0UFB4 Datasheet number: DS35279 Rev. 5 - 2 

November 2019 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMP21D0UFB4-7B/power-mosfet-p-channel-20-v-770-ma-0495-ohm-x2)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmp21d0ufb4-7b/mosfet-p-ch-20v-0-77a-150degc/dp/3405190RL)
---

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