# Power MOSFET, P Channel, 20 V, 2.5 A, 0.09 ohm, SOT-323, Surface Mount

![Product image](https://novapart.co/image/farnell:3405189/)

**URL**: https://novapart.co/products/DMP2165UW-7/power-mosfet-p-channel-20-v-25-a-009-ohm-sot-323
**SKU**: DMP2165UW-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1260
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 500mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SOT-323 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 2.5A |
| Drain Source On State Resistance | 0.09ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3405189/)

**DMP2165UW** TT **P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

**==> picture [207 x 48] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||
|---|---|
|ID max|
|BVDSS|RDS(ON) max|
|TA = +25°C|
|90mΩ @VGS = -4.5V|-2.5A|
|-20V|
|120mΩ @VGS = -2.5V|-2.0A|

**----- End of picture text -----**<br>


## **Features and Benefits** 

- Low On-Resistance 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Description** 

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

## **Mechanical Data** 

- Case: SOT323 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability  Classification Rating 94V-0 

## **Applications** 

   - Moisture Sensitivity: Level 1 per J-STD-020 

- Motor Control 

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|||||
|---|---|---|---|
||Terminals: Finish| Matte Tin Annealed over Alloy 42|
|Leadframe. Solderable per MIL-STD-202, Method 208|e3|
||Weight: 0.006 grams (Approximate)|
|D|
|SOT323|
|D|
|G|
|G|S|
|e|
|S|
|Top View|Equivalent Circuit|Top View|
|Information|(Note 4)|
|Part Number|Case|Packaging|
|DMP2165UW-7|SOT323|3000/Tape & Reel|
|DMP2165UW-13|SOT323|10000/Tape|& Reel|

**----- End of picture text -----**<br>


- Power Management Functions 

- Backlighting 

## **Ordering Information** (Note 4) 

- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and 

Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

U65 = Product Type Marking Code YM or YM = Date Code Marking for SAT or YM = Date Code Marking for SAT r YM = Date Code Marking for SAT Y or Y = Year (ex: F = 2018) M = Month (ex: 9 = September) 

YM or YM = Date Code Marking for SAT or YM = Date Code Marking for SAT r YM = Date Code Marking for SAT **U65** Y or Y = Year (ex: F = 2018) M = Month (ex: 9 = September) Date Code Key **Year 2017 2018 2019 2020 2021 2022 2023 2024 2025 Code** E F G H I J K L M ~~a~~ **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec** ~~———~~ **Code** 1 2 3 4 5 6 7 8 9 O N D 

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DMP2165UW Document number: DS40439  Rev. 2 - 2 

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**DMP2165UW** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|||||||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|-20|V|
|Gate-Source Voltage|||VGSS|±12|V|
|Continuous Drain Current (Note 6) VGS= -4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-2.5<br>-2.0|A|
|Maximum Continuous BodyDiode Forward Current(Note 6)|||IS|-1.0|A|
|Pulsed Drain Current(10µs Pulse,DutyCycle = 1%) (Note 6)|||IDM|-15|A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)||PD|0.5|W|
|Thermal Resistance,Junction to Ambient(Note 5)|SteadyState|RθJA|259|°C/W|
|Total Power Dissipation(Note 6)||PD|0.7|W|
|Thermal Resistance,Junction to Ambient(Note 6)|SteadyState|RθJA|175|°C/W|
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7)**<br>~~a~~|||||||
|Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~<br>~~a~~|-20<br>~~ee~~|<br>~~ee~~|<br>~~ee~~|V<br>~~ee~~|VGS= 0V,ID= -250µA<br>~~ee~~|
|Zero Gate Voltage Drain Current             TJ= +25°C<br>~~ee~~|IDSS<br>~~ee~~<br>~~a~~|<br>~~ee~~|<br>~~ee~~|-1.0<br>~~ee~~|µA<br>~~ee~~|VDS= -20V,VGS= 0V<br>~~ee~~|
|Gate-Source Leakage<br>~~ee~~|IGSS<br>~~ee~~<br>~~a~~|<br>~~ee~~|<br>~~ee~~|±100<br>~~ee~~|nA<br>~~ee~~|VGS= ±12V,VDS= 0V<br>~~ee~~|
|**ON CHARACTERISTICS(Note 7)**<br>~~a~~|||||||
|Gate Threshold Voltage|VGS(TH)<br>~~a~~|-0.4|—|-1.0|V|VDS= VGS,ID= -250µA|
|Static Drain-Source On-Resistance|RDS(ON)||63|90|mΩ|VGS= -4.5V,ID= -1.5A|
||||83|120||VGS= -2.5V,ID= -1.2A|
||||160|180||VGS= -1.8V,ID= -1.2A|
|Diode Forward Voltage<br>~~yee~~|VSD<br>~~yee~~|—<br>~~yee~~|-0.7<br>~~yee~~|-1.1<br>~~yee~~|V<br>~~yee~~|VGS= 0V,IS= -1A<br>~~=oo~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~yee~~<br>~~=oo~~|||||||
|Input Capacitance<br>~~yee~~|Ciss<br>~~yee~~|<br>~~yee~~|335<br>~~yee~~|<br>~~yee~~|pF<br>~~yee~~|VDS= -15V, VGS= 0V<br>f = 1.0MHz<br>~~= oo~~|
|Output Capacitance<br>~~yee~~|Coss<br>~~yee~~|<br>~~yee~~|72<br>~~yee~~|<br>~~yee~~|pF<br>~~yee~~||
|Reverse Transfer Capacitance|Crss||32||pF||
|Gate Resistance|RG||15.5||Ω|VGS= 0V,VDS= 0V,f = 1.0MHz|
|Total Gate Charge<br>~~pO~~|Qg||3.5||nC|VGS= -4.5V, VDS= -4V,<br>ID= -3.5A<br>~~eee~~|
|Gate-Source Charge|Qgs||0.4||nC||
|Gate-Drain Charge<br>~~———~~|Qgd||1.1|<br>~~eee~~|nC<br>~~eee~~||
|Turn-On DelayTime<br>~~———~~|tD(ON)||3.7|<br>~~eee~~|ns<br>~~eee~~|VDS= -4V, VGS= -4.5V,<br>RG= 6, ID= -1A<br>~~eee~~|
|Turn-On Rise Time<br>~~———~~|tR||8.7|<br>~~eee~~|ns<br>~~eee~~||
|Turn-Off DelayTime<br>~~———~~|tD(OFF)||17.8|<br>~~eee~~|ns<br>~~eee~~||
|Turn-Off Fall Time<br>~~———~~|tF||8|<br>~~eee~~|ns<br>~~eee~~||
|Reverse RecoveryTime<br>~~———~~<br>~~Ff~~|tRR<br>~~Ff~~|—<br>~~Ff~~|9|—<br>~~eee~~|ns<br>~~eee~~|IF= -4A,di/dt = 100A/μs<br>~~eee~~|
|Reverse RecoveryCharge<br>~~———~~<br>~~Ff~~|QRR<br>~~Ff~~|—-<br>~~Ff~~|1.5|—<br>~~eee~~|nC<br>~~eee~~|IF= -4A,di/dt = 100A/μs<br>~~eee~~|



Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided. 

7. Short duration pulse test used to minimize self-heating effect. 

8. Guaranteed by design. Not subject to product testing. 

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10.0   10<br> VGS = -2.5V<br> VGS = -3.0V  VDS = -5V<br>8.0   HA  VGS = -4.5V  8  fe<br> VGS = -10V<br> VGS = -2.0V<br>6.0   | 6  o e<br>4.0    VGS = -1.7V  4<br>y o<br>2.0   |— —_  VGS = -1.5V  2  TJ = 150 ℃ ff TJ = 85 ℃<br> VGS = -1.3V  TJ = 125 ℃ TTJ = -55J = 25 ℃℃<br>0.0   p O 0  D-<br>0  1  2  3  4  5  0  0.5  1  1.5  2  2.5  3<br>VDS, DRAIN-SOURCE VOLTAGE (V)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic  Figure 2. Typical Transfer Characteristic<br>0.24  0.5<br>0.22   VGS = -1.8V<br>0.45<br>0.2  yp eee eee<br>0.4<br>0.18<br>0.35<br>0.16  BPRS HSE<br>0.14  fe 0.3  ee |<br>0.12   VGS = -2.5V  0.25  ID = -1.2A<br>0.1  ee e 0.2  E R<br>0.08<br>—aa 0.15  e | p<br>0.06<br> VGS = -4.5V  0.1<br>0.04<br>0.02  0.05  ID = -1.5A<br>E E P oe<br>0  0<br>0  2  4  6  8  10  0  2  4  6  8  10  12<br>ID, DRAIN-SOURCE CURRENT (A)   VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs. Drain Current  Figure 4. Typical Transfer Characteristic<br>and Gate Voltage<br>0.12  1.8<br>VGS = -4.5V<br>TJ = 150 ℃<br>TJ = 125 ℃ 1.6   VGS = -4.5V, ID = -1.5A<br>0.1  eS eee<br>1.4   VGS = -2.5V, ID = -1.2A<br>0.08  SS a<br>TJ = 85 ℃<br>1.2<br>ee ee<br>0.06  TJ = 25 ℃<br>1   VGS = -1.8V, ID = -1.2A<br>fT “A<br>0.04  TJ = -55 ℃<br>0.02  EL} 0.8 0.6  PLEEEETE<br>0  2  4  6  8  10  -50  -25  0  25  50  75  100  125  150<br>ID, DRAIN CURRENT (A)  TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 5. Typical On-Resistance vs. Drain Current  Figure 6. On-Resistance Variation with Junction<br>and Junction Temperature  Temperature<br>, DRAIN CURRENT (A)  , DRAIN CURRENT (A)<br>ID ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)  , DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON) DS(ON)<br>R R<br>(NORMALIZED)<br>,  DRAIN-SOURCE ON-RESISTANCE (Ω)  , DRAIN-SOURCE ON-RESISTANCE<br>DS(ON) DS(ON)<br>R R<br>**----- End of picture text -----**<br>


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**DMP2165UW** 

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0.2  1<br>0.18   VGS = -1.8V, ID = -1.2A<br>0.16  oe Re<br>Py |  e R 0.8<br>ID = -1mA<br>0.14<br>Cer we<br>0.12<br>oe 0.6  o™ :<br>0.1   VGS = -2.5V, ID = -1.2A<br>ID = -250μA<br>0.08<br>0.06  Cee e 0.4  S SS<br>A ae XK<br>0.04   VGS = -4.5V, ID = -1.5A<br>0.02  |eT| RO| L 0.2  LE ELE<br>-50  -25  0  25  50  75  100  125  150  -50  -25  0  25  50  75  100  125  150<br>TJ, JUNCTION TEMPERATURE ( ℃ )  TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 7. On-Resistance Variation with Junction   Figure 8. Gate Threshold Variation vs. Junction<br>Temperature  Temperature<br>10  1000<br>VGS = 0V  f = 1MHz<br>Ciss<br>8  a e|| tee Ne = ==<br>6  K S EE \<br>Coss<br>100<br>4  ff e e e<br>! ======—=——<br>2  TJ = 150 [o] C  TK TJ = 85 [o] C  a Crss<br>TJ = 125 [o] C  TJ = 25 [o] C<br>TJ = -55 [o] C<br>ZYy FREE T eno<br>0  10   PEE EL ELLE<br>0  0.3  0.6  0.9  1.2  1.5  0  2  4  6  8  10  12  14  16  18  20<br>VSD, SOURCE-DRAIN VOLTAGE (V)  VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure  9. Diode Forward Voltage vs. Current  Figure 10. Typical Junction Capacitance<br>10  100<br>RLimited DS(ON) PW = 1ms  PW = 100µs<br>PW = 10ms<br>8<br>10  PW = 100ms<br>6<br>1<br>4<br>VDS = -4.0V, ID = -3.5A  TJ(Max) = 150 ℃<br>2  0.1  TSingle Pulse C = 25 ℃ PW = 1s<br>DUT on 1*MRP Board  PW = 10s<br>VGS = -4.5V  DC<br>0  0.01  HE} Ly Rill<br>0  1  2  3  4  5  6  7  8  0.1  1  10  100<br>Qg (nC)  VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. Gate Charge  Figure 12. SOA, Safe Operation Area<br>, GATE THRESHOLD VOLTAGE (V)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>GS(TH)<br>DS(ON) V<br>R<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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1<br>ee D=0.7  s ea ee ree GS<br>D=0.5<br>D=0.9<br>Ft CHT CH Eo GEE TTT<br>Ps LEU TARTAN TERI PEAT PUTT<br>D=0.3<br>a oe ek te ck<br>0.1  Su ig<br>D=0.1<br>Fu ecco<br>SS D=0.05  eaeEHHeeecEttEPHemeat ene na ne<br>Tl eA SE Ar<br>ST ET TT TT TT TT ET<br>D=0.02<br>T EE AE TEE HAP PTE TE<br>Od<br>0.01  P 0420<br>a D=0.01  SEE<br>Peeam! PAUAAT TitrrrTPT erTPT TPT PP PPT PPP<br>AT D=0.005  HE T CHETTEITTTETTTP RθJA(t) = r(t) * RθJA Hii<br>RθJA = 258 ℃ /W<br>D=Single Pulse  Duty Cycle, D = t1 / t2<br>0.001<br>1E-06  1E-05 0.0001  0.001  0.01  0.1  1  10  100  1000  10000 100000 1000000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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**DMP2165UW** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT323** 

||||||||||||||D|D|D|||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||A2||A1||e<br>~~0 ~~||||||||||||||||||||L<br>c<br> ~~JO,~~|||||a|**SOT323**<br>**Dim**<br>**Min**<br>**Max**<br>**Typ**<br>**A1**<br>0.00<br>0.10<br>0.05<br>**A2**<br>0.90<br>1.00<br>0.95<br>**b**<br>0.25<br>0.40<br>0.30<br>**c**<br>0.10 0.18<br>0.11<br>**D**<br>1.802.20<br>2.15<br>~~—=~~|||||
|||||||||||||||||||||||||||||||||**E**|2.00|2.20|2.10|
||||||||||||||b|||||||||||||||||||**E1**|1.15|1.35|1.30|
|||||||||||||||||||||||||||||||||**e**|0.650BSC|||
|||||||||||||||||||||||||||||||||**e1**|1.20|1.40|1.30|
|||||||||||||||||||||||||||||||||**F**|0.375|0.475|0.425|
|||||||||||||||||||||||||||||||||**L**|0.25|0.40|0.30|
|||||||||||||||||||||||||||||||||**a**|0°|8°|--|
|||||||||||||||||||||||||||||||||**All Dimensions in mm**||||
|E|||||||||||||||||||||||||E1|||||||||||
|~~|~~<br>~~a~~||||||||||||||||||||||||||||||||||||
|||||||||||||||||||||||||||||||||||||
|||F|||||||||||e1|||||||||||||||||||||||



## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT323** 

**==> picture [383 x 152] intentionally omitted <==**

**----- Start of picture text -----**<br>
X<br>.<br>Y Dimensions  Value<br>(in mm)<br>C  0.650<br>G  1.300<br>P e<br>Y1 G X  0.470<br>Y  0.600<br>Y1  2.500<br>C<br>co =<br>**----- End of picture text -----**<br>


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DMP2165UW Document number: DS40439  Rev. 2 - 2 

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**DMP2165UW** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2018, Diodes Incorporated 

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DMP2165UW Document number: DS40439  Rev. 2 - 2 

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- [Supplier page](https://es.farnell.com/diodes-inc/dmp2165uw-7/mosfet-p-ch-20v-2-5a-150deg-c/dp/3405189)
---

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