# Power MOSFET, P Channel, 20 V, 3 A, 0.051 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:3943733RL/)

**URL**: https://novapart.co/products/DMP2130L-7/power-mosfet-p-channel-20-v-3-a-0051-ohm-sot-23
**SKU**: DMP2130L-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1120
**Stock**: 500+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.4W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 3A |
| Drain Source On State Resistance | 0.051ohm |
| Gate Source Threshold Voltage Max | 1.25V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943733RL/)

**DMP2130L** Cd 

**P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Features** 

## **Mechanical Data** 

- Low RDS(ON): 

   - 75m  @VGS = -4.5V 

   - 110m  @VGS = -2.7V 

   - 125m  @VGS = -2.5V 

- Low Input/Output Leakage 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- Case: SOT23 

- Case Material - Molded Plastic, “Green” Molding Compound. UL Flammability Rating 94V-0 

- Moisture Sensitivity:  Level 1 per J-STD-020 

- Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

- Terminal Connections: See Diagram Below 

- Weight: 0.008 grams (Approximate) 

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Drain<br>SOT23<br>D<br>Gate<br>G S<br>Source<br>Top View  Internal Schematic Top View<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMP2130L-7|SOT23|3000/Tape & Reel|



- Notes:        1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

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MP1 = Product Type Marking Code YM or       = Date Code Marking       Y or    = Year (ex: G = 2019)  | Y _ YM<br>M = Month (ex: 9 = September)<br>**----- End of picture text -----**<br>


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Date Code Key<br>Year 2007 ~ 2019 2020 2021 2022 2023 2024 2025 2026 2027<br>Code U  ~  G  H  I  J  K  L  M  N  O<br>[/}—— —_} —_| |_| _} _} _}__+_+_}__|<br>Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>Code 1  2  3  4  5  6  7  8  9  O  N  D<br>[{}——} —_+ —_}—_} |_| —_}—__ ++} —_}_} —_}<br>**----- End of picture text -----**<br>


1 of 6 **www.diodes.com** 

DMP2130L Document number: DS31346 Rev. 8 - 2 

March 2019 © Diodes Incorporated 

**DMP2130L** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

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|||||
|---|---|---|---|
|Characteristic|Symbol|Value|Unit|
|Drain-Source Voltage|VDSS|-20|V|
|Gate-Source Voltage|VGSS|12|V|
|Drain Current (Note 5) Continuous|TA = +25°C|-3.0|
|TA = +70°C|ID|-2.4|A|
|Pulsed Drain Current (Note 6)|IDM|-15|A|
|Body-Diode Continuous Current (Note 5)|IS|-2.0|A|

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**Thermal Characteristics** 

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|||||||
|---|---|---|---|---|---|
|DG|Characteristic|Symbol|GO|Value|Unit|
|ef|Total Power Dissipation (Note 5)|PD|1.4|W|
|Thermal Resistance, Junction to Ambient (Note 5); Steady-State|RJA|90|°C/W|
|Operating and Storage Temperature Range|TJ, TSTG|-55 to +150|°C|

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**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

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|||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|DD|Characteristic|Symbol|Min|DO|Typ|Max|Unit|(|Test Condition|
|STATIC PARAMETERS|
|ee|Drain-Source Breakdown Voltage|BVDSS|-20|||V|ID = -250µA, VGS = 0V|
|en|Zero Gate Voltage Drain Current                       TJ = +25C|Gs|IDSS|I||(RR||ID|-1|UD|µA|VDS = -20V, VGS = 0V|
|Rts|Gate-Body Leakage Current|IGSS||rs|ID||100|I|nA|I|VDS = 0V, VGS = 12V|
|Gate Threshold Voltage|VGS(TH)|-0.6||-1.25|V|VDS = VGS, ID = -250µA|
|ee|On State Drain Current (Note 7)|ID(ON)|-15|||A|VGS = -4.5V, VDS = -5V|
|51|75|VGS = -4.5V, ID = -3.5A|
|Static Drain-Source On-Resistance (Note 7)|RDS(ON)||87|110|m|VGS = -2.7V, ID = -3.0A|
|99|125|VGS = -2.5V, ID = -2.6A|
|ee eee|
|Rts|Forward Transconductance (Note 7)|gFS|Is||I|7.3|I||I|S|VDS = -10V, ID = -3.0A|
|Diode Forward Voltage (Note 7)|VSD||-0.79|-1.26|V|IS = -1.7A, VGS = 0V|
|ee|Maximum Body-Diode Continuous Current (Note 5)|IS|||1.7|A||
|DYNAMIC PARAMETERS (Note 8)|
|Gs|Total Gate Charge|Qg|I||(nD|7.3|OD||nC|(OO|VGS = -4.5V, VDS = -10V, ID = -3.0A|
|nn|Gate-Source Charge|(tn|Qgs|(Is||2.0|nD|I||(OS|nC|(OO|VGS = -4.5V, VDS = -10V, ID = -3.0A|
|Gate-Drain Charge|Qgd||1.9||nC|VGS = -4.5V, VDS = -10V, ID = -3.0A|
|Turn-On Delay Time|tD(ON)||12||ns|
|Turn-On Rise Time|tR||20||ns|VDS = -10V, VGS = -4.5V,|
|Turn-Off Delay Time|tD(OFF)||38||ns|RL = 10, RG = 6|
|Turn-Off Fall Time|tF||41||ns|
|——|Input Capacitance|Ciss||443|ee||pF|e|
|Output Capacitance|Coss||128||pF|VDS = -16V, VGS = 0V|
|f = 1.0MHz|
|es|Reverse Transfer Capacitance|C|ee|rss||ee|101|ee||ee|pF|
|Notes:|5. Device mounted on 1"x1", FR-4 PC board with 2 oz. copper and test pulse width t 10s.|

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6. Repetitive Rating, pulse width limited by junction temperature. 

7. Test pulse width t = 300µs. 

8. Guaranteed by design.  Not subject to production testing. 

2 of 6 **www.diodes.com** 

DMP2130L Document number: DS31346 Rev. 8 - 2 

March 2019 © Diodes Incorporated 

**DMP2130L** —— 

. 'DrODES.un ¢c Oo Rr P ORATE Do 

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VDS = -5V<br>Pulsed<br>|<br>)<br>/<br>d<br>aZZ a= 55°C<br>0 . 5 1 1.5 2 25<br>-VGS, GATE-SOURCE VOLTAGE (V)GS, GATE-SOURCE VOLTAGE (V), GATE-SOURCE VOLTAGE (V)<br>Fig. 2  Typical Transfer Characteristics<br>**----- End of picture text -----**<br>


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-VDS, DRAIN-SOURCE VOLTAGE (V) -VGS, GATE-SOURCE VOLTAGE (V)GS, GATE-SOURCE VOLTAGE (V), GATE-SOURCE VOLTAGE (V)<br>Fig. 1  Typical Output Characteristics Fig. 2  Typical Transfer Characteristics<br>0 . 3 9,000<br>a<br>a a<br>| ANWoNeee C iss ||<br>02 | AN<br>—<br>Coss<br>100 aa Crss es |<br>aa<br>aa<br>0 . 1 V GS  = -2.5V ? a |<br>f = 1 MHz<br>VGS = -4.5V VGS = 0V<br>em —<br>VGS = -10V<br>ST ti ><br>o0 .t 01 LUT 0 . 1 | UME 1 Vil 10 i 0 4 8 12 16 20<br>-ID, DRAIN CURRENT (A) -VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 3  On-Resistance vs. Drain Current and Gate Voltage Fig. 4  Typical Total Capacitance<br>><br>V GS  = -4.5V<br>O ID = -3.0A<br>A<br>-ID = 250µ A<br>Go 1 oa<br>VGS = -10V<br>a ID = -3.5A<br>a 1.2 ZA VGS = -2.5V<br>I D  = -1.0A<br>— 1<br>Ww<br>' LA<br>£0 6 0.8<br>= 0.7<br>- 50 -25 0 25 50 75 100 125 150 Oe 25 85 125 150<br>T,, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE  ( C)°C)<br>Fig . 5 Gate Threshold Voltage vs . Ambient Temperature<br>Fig. 6 Normalized Static Drain-Source On-Resistance<br>vs. Ambient Temperature<br>, STATIC DRAIN-SOURCE<br>R ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>, CAPACITANCE (pF)<br>C<br>T<br>)<br>, STATIC DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(on)<br>**----- End of picture text -----**<br>


3 of 6 **www.diodes.com** 

DMP2130L Document number: DS31346 Rev. 8 - 2 

March 2019 © Diodes Incorporated 

**DMP2130L** 

' 

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100<br>RDS(ON) Limited  PW =100µs<br>fT LETT<br>PW =1ms<br>a 10  HERRero, PW =10ms<br>RENE TS PW<br>=100ms<br>1  NSN INR<br>PW =1s<br>/ TERRES<br>TJ(Max) = 150 ℃<br>| 0.1  TC = 25 ℃ |_|SONIN NEN pt<br>ee eeee Single Pulse  SS<br>DUT on 1*MRP  PW =10s  TOS RSE<br>board<br>DC<br>VGS = -10V<br>/ rt COTM<br>| Y | | | 0.01  nro<br>0.6 0 . 7 0.8 0.9 1 0.1  1  10  100<br>- Vsp: SOURCE DRAIN VOLTAGE (V) -VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 7 Diode Forward Voltage v s.  Current<br>Fig. 8 SOA, Safe Operation Area<br>1<br>et ti<br>Fa<br>F D=0.5  TC [Le] tTrrr D=0.9  eta<br>A Sl 1 eT<br>D=0.7<br>PAIS D=0.3  D=0.1  TT ae [I<br>0.1  paAE ull emPOMerryeio LEE<br>D=0.05<br>a e/a<br>D=0.02  Tt a<br>PHN ra<br>D=0.01<br>S ore AHH<br>0.01  cl AAAIEINEMEU<br>D=0.005<br>a 0 8 0 0 Os 8 O08 OO<br>R D=Single Pulse  CUEHICTTT RθJA(t) = r(t) * RθJA CTH<br>RθJA = 170 ℃ /W<br>Duty Cycle, D = t1 / t2<br>0.001<br>0.00001  0.0001  0.001  0.01  0.1  1  10  100  1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 9. Transient Thermal Resistance<br>, DRAIN CURRENT (A)<br>D<br>-I<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


4 of 6 **www.diodes.com** 

DMP2130L Document number: DS31346 Rev. 8 - 2 

March 2019 © Diodes Incorporated 

**DMP2130L** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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SOT23<br>All 7°<br>H<br>GAUGE PLANE SOT23<br>0.25 Dim  Min  Max  Typ<br>J A  0.37  0.51  0.40<br>K1 K<br>B  1.20 1.40 1.30<br>C  2.30  2.50  2.40<br>a D  0.89 1.03 0.915<br>A M<br>F  0.45 0.60 0.535<br>aeee L L1 ===—— G 1.78 2.05 1.83<br>H  2.80 3.00 2.90<br>a — J  ++ 0.013  0.10  0.05<br>K  0.890 1.00 0.975<br>C B K1  0.903  1.10  1.025<br>L  0.45 0.61  0.55<br>L1  0.25  0.55  0.40<br>M  0.085 0.150 0.110<br>i= oe<br>tt D ———— a  0°  8°  --<br>All Dimensions in mm<br>F G<br>thot No<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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SOT23<br>Y<br>Y1 at C<br>EHreetee<br>Poo X X1<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value(in mm)**|
|---|---|
|**C**|2.0|
|**X**|0.8|
|**X1**|1.35|
|**Y**|0.9|
|**Y1**|2.9|



5 of 6 **www.diodes.com** 

DMP2130L Document number: DS31346 Rev. 8 - 2 

March 2019 © Diodes Incorporated 

**DMP2130L** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2019, Diodes Incorporated 

**www.diodes.com** 

6 of 6 **www.diodes.com** 

DMP2130L Document number: DS31346 Rev. 8 - 2 

March 2019 © Diodes Incorporated 



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- [Supplier page](https://es.farnell.com/diodes-inc/dmp2130l-7/mosfet-p-ch-20v-3a-sot-23/dp/3943733RL)
---

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