# Power MOSFET, P Channel, 20 V, 3.8 A, 0.062 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:3405186/)

**URL**: https://novapart.co/products/DMP2120U-7/power-mosfet-p-channel-20-v-38-a-0062-ohm-sot-23
**SKU**: DMP2120U-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0900
**Stock**: 10+
**Lead Time**: 190 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 800mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 3.8A |
| Drain Source On State Resistance | 0.062ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3405186/)

**DMP2120U P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

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||||
|---|---|---|
|BVDSS|RDS(ON) Max|TAI = +25°C D Max|
|62mΩ @ VGS = -4.5V|-3.8A|
|-20V|
|90mΩ @ VGS = -2.5V|-3.1A|

**----- End of picture text -----**<br>


## **Features and Benefits** 

- Low On-Resistance 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen- and Antimony-Free. “Green” Device (Note 3)** 

## **Description and Applications** 

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. 

## **Mechanical Data** 

   - Case: SOT23 

   - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

- Battery Charging 

- Power Management Functions 

- DC-DC Converters 

- Portable Power Adaptors 

- Terminals: FinishMatte Tin Annealed over Copper Lead-Frame. Solderable per MIL-STD-202, Method 208 

- Terminals Connections: See Diagram Below 

- Weight: 0.009 grams (Approximate) 

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||||
|---|---|---|
|D|SOT23|
|D|
|G|
|e|
|8|G|S|
|S|
|Top View|Internal Schematic|Top View|
|Information|(Note 4)|
|Part Number|Case|Packaging|
|DMP2120U-7|SOT23|3,000/Tape & Reel|
|DMP2120U-13|SOT23|10,000/Tape & Reel|

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## **Ordering Information** (Note 4) 

- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" 

and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

SOT23 

212 = Product Type Marking Code YM = Date Code Marking Y or Y= Year (ex: H = 2020) Y= Year (ex: H = 2020) = Year (ex: H = 2020) 

**P65212** YM = Date Code Marking Y or Y= Year (ex: H = 2020) Y= Year (ex: H = 2020) = Year (ex: H = 2020) M or M = Month (ex: 9 = September) Date Code Key **Year 2017 ~ 2020 2021 2022 2023 2024 2025 Code** E ~ H I J K L M ~~a~~ **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec** ~~———~~ **Code** 1 2 3 4 5 6 7 8 9 O N D 

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DMP2120U Document number: DS38531 Rev. 4 - 2 

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**DMP2120U** 

**Maximum Ratings** (@ TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|-20|V|
|Gate-Source Voltage|||VGSS|±8|V|
|Continuous Drain Current (Note 6) VGS= -4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-3.8<br>-3.0|A|
|Maximum Continuous BodyDiode Forward Current(Note 6)|||IS|-1.3|A|
|Pulsed Drain Current(10µs Pulse,DutyCycle = 1%)|||IDM|-20|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)||PD|0.8|W|
|Thermal Resistance, Junction to Ambient (Note 5)|Steady State|RθJA|163|°C/W|
||t<10s||114||
|Total Power Dissipation(Note 6)||PD|1.3|W|
|Thermal Resistance, Junction to Ambient (Note 6)|Steady State|RθJA|94|°C/W|
||t<10s||66||
|Operating and Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS**(Note 7)|||||||
|Drain-Source Breakdown Voltage|BVDSS|-20|—|—|V|VGS= 0V,ID= -250μA|
|Zero Gate Voltage Drain Current TJ= +25°C|IDSS|—|—|-1.0|μA|VDS= -20V,VGS= 0V|
|Gate-Source Leakage|IGSS|—|—|±100|nA|VGS= ±8V,VDS= 0V|
|**ON CHARACTERISTICS**(Note 7)|||||||
|Gate Threshold Voltage|VGS(TH)|-0.4|—|-1.0|V|VDS= VGS,ID= -250μA|
|Static Drain-Source On-Resistance<br>~~tf~~|RDS(ON)<br>~~tf~~|—<br>~~tf~~|51<br>71<br>116<br>~~tf~~|62<br>90<br>150<br>~~tf~~|mΩ<br>~~tf~~|VGS= -4.5V, ID= -4.2A<br>VGS= -2.5V, ID= -3.4A<br>VGS= -1.8V,ID= -2.0A<br>~~tf~~|
|Diode Forward Voltage<br>~~tf~~|VSD<br>~~tf~~|—<br>~~tf~~|-0.7<br>~~tf~~|-1.1<br>~~tf~~|V<br>~~tf~~|VGS= 0V,IS= -1A<br>~~tf~~|
|**DYNAMIC CHARACTERISTICS**(Note 8)|||||||
|Input Capacitance<br>~~——~~|Ciss<br>~~——~~|—<br>~~——~~|487<br>~~——~~|—<br>~~——~~|pF<br>~~——~~|VDS= -20V, VGS= 0V,<br>f = 1.0MHz<br>~~——~~|
|Output Capacitance<br>~~——~~|Coss<br>~~——~~|—<br>~~——~~|60<br>~~——~~|—<br>~~——~~|pF<br>~~——~~||
|Reverse Transfer Capacitance<br>~~——~~|Crss<br>~~——~~|—<br>~~——~~|53<br>~~——~~|—<br>~~——~~|pF<br>~~——~~||
|Gate Resistance<br>~~——~~|RG<br>~~——~~|—<br>~~——~~|39<br>~~——~~|—<br>~~——~~|Ω<br>~~——~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~——~~|
|Total Gate Charge|QG|—|6.3|—|nC|VGS= -4.5V, VDS= -4V,<br>ID= -3.5A|
|Gate-Source Charge|QGS|—|0.7|—|nC||
|Gate-Drain Charge|QGD|—|1.4|—|nC||
|Turn-On DelayTime|tD(ON)|—|5.3|—|ns|VDS= -4V, VGS= -4.5V,<br>ID= -1.0A, RG= 6Ω|
|Turn-On Rise Time|tR|—|15.7|—|ns||
|Turn-Off DelayTime|tD(OFF)|—|38.5|—|ns||
|Turn-Off Fall Time|tF|—|23.2|—|ns||
|BodyDiode Reverse RecoveryTime|tRR|—|7.5|—|ns|IS= -2.0A,di/dt = -100A/μs|
|BodyDiode Reverse RecoveryCharge|QRR|—|1.9|—|nC|IS= -2.0A, di/dt= -100A/μs|



- Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 

   6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 

7. Short duration pulse test used to minimize self-heating effect. 

8. Guaranteed by design. Not subject to product testing. 

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10 10<br>VGS = -8V<br>VGS  = -4.5V VDS = -5V<br>8 VGS = -3V V GS  = -2V 8<br>VGS = -2.5V<br>—_ tL AL<br>6 6<br>[]/ EEE of TJ = 150°C<br>4 4 TJ = 125°C T J  = 25°C<br>TJ = 85°C TJ = -55°C<br>2 Vo V GS  = -1.5V 2 ee Ae<br>po ff<br>VGS = -1.2V<br>0 An 0 Ae<br>0 0.5 1 1.5 2 2.5 3 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4<br>VDS , DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristic Figure 2 Typical Transfer Characteristics<br>0.09 0.5<br>0.45<br>0.08 PtP VGS = -2.5V Ee 0.4 EERE ID = -4.5A  FE<br>0.35<br>0.07 peer 0.3 EEE<br>0.25<br>0.06 0.2<br>Pte EE | EERE<br>VGS = -4.5V 0.15<br>0.05 SR 0.1 eee<br>0.05<br>0.04 0<br>0 PLE 2 4 EL 6 8 10 0 eee 1 2 3 4 5 eee 6 7 8<br>ID, DRAIN-SOURCE CURRENT (A)  V GS, GATE-SOURCE VOLTAGE (V)<br>Figure 3 Typical On-Resistance vs.  Figure 4 Typical Drain-Source On-Resistance<br>Drain Current and Gate Voltage  vs. Gate-Source Voltage<br>0.08 1.8<br>VGS = -4.5V TJ = 150°C<br>0.07 TJ = 125°C 1.6 TTT<br>VGS = -4.5V<br>TJ = 85°C ID = -4.2A<br>1.4<br>SinnnnEe<br>0.06<br>VGS = -2.5V<br>TJ = 25°C 1.2 ID = -3.4A<br>0.05<br>Poe<br>1<br>TJ = -55°C annPae<br>0.04<br>eT<br>0.8<br>0.03<br>0 2 4 6 8 10 0.6 TO<br>I D, DRAIN CURRENT (A) -50 -25 0 25 50 75 100 125 150<br>Figure 5 Typical On-Resistance vs.  TJ, JUNCTION TEMPERATURE (°C)<br>Drain Current and Temperature Figure 6 On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A)<br>D , DRAIN CURRENT (A)<br> I D<br> I<br>)<br>Ω )<br>, DRAIN-SOURCE ON-RESISTANCE ( Ω<br>, DRAIN-SOURCE ON-RESISTANCE (<br>RDS(ON) RDS(ON)<br>)Ω<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>, DRAIN-SOURCE ON-RESISTANCE (<br>ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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0.12 1.2<br>0.1 VGS = -2.5V 1<br>ID = -3.4A<br>0.08 ToT =  ee 0.8 I D  = -1mA<br>er] RSS<br>ID = -250µA<br>0.06 Bee asses V GS  = -4.5V 0.6 -EL RS:<br>ID = -4.2A<br>0.04 psec 0.4 TTL ESS<br>0.02 0.2<br>-50 eteeth -25 0 25 50 75 100 125 150 §=— -50 Gere -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ( C)° TTJ, JUNCTION TEMPERATURE (J, JUNCTION TEMPERATURE (°C) °C)<br>Figure 7 On-Resistance Variation with Temperature Figure 8 Gate Threshold Variation vs. Ambient TemperatureFigure 8 Gate Threshold Variation vs. Junction Temperature<br>10 10000<br>f=1MHz<br>| —————<br>8<br>1000<br>6 oe TJ = 150°C a C iss<br>TJ = 125°C TJ = 25°C<br>HA See<br>4 TJ = 85°C A] 4 i<br>TJ = -55°C 100 a C oss<br>2 / C rss<br>jf —<br>0 Jf 10<br>0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20<br>VSD, SOURCE-DRAIN VOLTAGE (V) V DS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9 Diode Forward Voltage vs. Current Figure 10 Typical Junction Capacitance<br>8 100<br>R DS(on)<br>Limited<br>P W  = 100µs<br>PP | Ly i<br>6 10<br>DC<br>4 VDS = -4V 1<br>ID = -3.5A PW = 10s<br>PW = 1s<br>P W = 100ms ANNAN TINO TT<br>2 0.1 T J(m ax = 1) 50 ° C PW = 10ms<br>T C = 25°C PW = 1ms<br>V  = -4.5V<br>GS<br>Single Pulse<br>DUT on 1 * MRP Board<br>0 TTT yf 0.01 EreeSaitll<br>0 2 4 6 8 10 12 0.1 1 10 100<br>Qg, TOTAL GATE CHARGE (nC) V DS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11 Gate Charge Figure 12 SOA, Safe Operation Area<br>)Ω , GATE THRESHOLD VOLTAGE (V)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>GS(th)<br>V<br>DS(ON)<br>R<br>, SOURCE CURRENT (A)<br>S<br>I<br>, JUNCTION CAPACITANCE (pF)<br>CT<br>, DRAIN CURRENT (A)<br>D<br>I<br> GATE THRESHOLD VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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te cORPORATEAD<br>**----- End of picture text -----**<br>


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1<br>SS D = 0.9 Sen<br>Seamer D = 0.7<br>FATTO D = 0.5 tei<br>PE D = 0.3 SerTUT VI eeemreeFN TEPaa<br>NT<br>0.1 Gf D = 0.1 AIUN EP oer I EETNUINU<br>a A 8 OO<br>Ee<br>D = 0.05<br>oy pattie A AT TTT<br>0 a/c ||<br>RN D = 0.02 A<br>0.01 EHLIN D = 0.01 a Tee/aTIE UII ATTA TTTEUUIN|LT<br>Ce EH EH PE EE EH<br>Po D = 0.005 TT AT ET ET<br>tT RθJA(t) = r(t) * RθJA UHH)<br>D = Single Pulse R θJA  = 162°C/W<br>Duty Cycle, D = t1/ t2<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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**DMP2120U** 

## **Package Outline Dimensions** 

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Please see http://www.diodes.com/package-outlines.html for the latest version.<br>All 7°<br>H<br>GAUGE PLANE SOT23<br>0.25 Dim  Min  Max  Typ<br>K1 K J A  0.37  0.51  0.40<br>B  1.20 1.40 1.30<br>C  2.30 2.50 2.40<br>a<br>D  0.89 1.03 0.915<br>A M<br>F  0.45 0.60 0.535<br>a ve L L1 == G  1.78  2.05  1.83<br>H  2.80  3.00  2.90<br>J  0.013  0.10  0.05<br>K  0.890  1.00  0.975<br>C B K1  0.903  1.10  1.025<br>L  0.45  0.61  0.55<br>L1  0.25  0.55  0.40<br>R ecut = M  = 0.085 0.150 0.110  = =<br>D a  0°  8°  --<br>F G All Dimensions in mm<br>Loess es<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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Y<br>Y1 x C<br>aCo X LWae X1<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value(in mm)**|
|---|---|
|**C**|2.0|
|**X**|0.8|
|**X1**|1.35|
|**Y**|0.9|
|**Y1**|2.9|



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**DMP2120U** ~~[|~~ 

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## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2020, Diodes Incorporated 

**www.diodes.com** 

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## Links

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---

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