# Power MOSFET, P Channel, 20 V, 2 A, 0.063 ohm, SOT-323, Surface Mount

![Product image](https://novapart.co/image/farnell:3943730RL/)

**URL**: https://novapart.co/products/DMP2110UW-7/power-mosfet-p-channel-20-v-2-a-0063-ohm-sot-323
**SKU**: DMP2110UW-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0650
**Stock**: 1000+
**Lead Time**: 134 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 490mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SOT-323 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 2A |
| Drain Source On State Resistance | 0.063ohm |
| Gate Source Threshold Voltage Max | 900mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943730RL/)

**DMP2110UW P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON) max**|**ID max**<br>**TA = +25°C**|
|-20V|100mΩ@VGS= -4.5V|-2.0A|
||120mΩ@VGS= -2.5V|-1.9A|
||160mΩ@VGS= -1.8V|-1.6A|



## **Description** 

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. 

## **Applications** 

- Motor Control 

- Power Management Functions 

- Backlighting 

## **Features and Benefits** 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/** 

## **Mechanical Data** 

- Case: SOT323 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals Connections: See Diagram Below 

- Terminals: Finish—Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 

- Weight: 0.006 grams (Approximate) 

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SOT323<br>D<br>D<br>G<br>G S<br>% & S -<br>Top View  Internal Schematic<br>**----- End of picture text -----**<br>


Top View 

## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMP2110UW-7|SOT323|3000/Tape & Reel|
|DMP2110UW-13|SOT323|10,000/Tape & Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and 

Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

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CI6 = Marking Code<br>CI6 YM = Date Code Marking<br>Y = Year (ex: H = 2020)<br>M = Month (ex: 9 = September)<br>Date Code Key<br>Year 2018  2019  2020  2021  2022  2023  2024  2025  2026  2027  2028  2029<br>_+ Code F  G H  I  J K  L  M  N  O P  R<br>Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>_—+ Code 1  2  3 4  5 6 7  8 9 O N  D  —<br>DMP2110UW 1 of 7  July 2020<br>www.diodes.com   © Diodes Incorporated<br>M<br>Y<br>**----- End of picture text -----**<br>


DMP2110UW Document number: DS41139  Rev. 4 - 2 

**DMP2110UW** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|-20|V|
|Gate-Source Voltage|||VGSS|±12|V|
|Continuous Drain Current (Note 6) VGS= -4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-2.0<br>-1.6|A|
|Maximum Continuous BodyDiode Forward Current (Note 6)|||IS|-0.9|A|
|Pulsed Drain Current(10µs Pulse, DutyCycle = 1%) (Note 6)|||IDM|-15|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)|PD|0.49|W|
|Thermal Resistance, Junction to Ambient|RJA|253|°C/W|
|Total Power Dissipation(Note 6)|PD|0.65|W|
|Thermal Resistance, Junction to Ambient|RJA|192|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



|**Electrical Characteristics** (@TA= +25°C, unless otherwise specified.)<br>~~a~~<br>~~OD~~<br>~~|~~|**Electrical Characteristics** (@TA= +25°C, unless otherwise specified.)<br>~~a~~<br>~~OD~~<br>~~|~~|**Electrical Characteristics** (@TA= +25°C, unless otherwise specified.)<br>~~a~~<br>~~OD~~<br>~~|~~|**Electrical Characteristics** (@TA= +25°C, unless otherwise specified.)<br>~~a~~<br>~~OD~~<br>~~|~~|**Electrical Characteristics** (@TA= +25°C, unless otherwise specified.)<br>~~a~~<br>~~OD~~<br>~~|~~|**Electrical Characteristics** (@TA= +25°C, unless otherwise specified.)<br>~~a~~<br>~~OD~~<br>~~|~~|**Electrical Characteristics** (@TA= +25°C, unless otherwise specified.)<br>~~a~~<br>~~OD~~<br>~~|~~|
|---|---|---|---|---|---|---|
|~~a~~<br>~~OD~~<br>~~|~~|||||||
|**Characteristic**<br>~~a~~|**Symbol**<br>~~OD~~|**Min**<br>~~OD~~|**Typ**|**Max**|**Unit**|**Test Condition**<br>~~|~~|
|**OFF CHARACTERISTICS(Note 7)**<br>~~a~~<br>~~OD~~<br>~~|~~<br>~~eee~~|||||||
|Drain-Source Breakdown Voltage<br>~~eee~~|BVDSS<br>~~eee~~|-20<br>~~eee~~|—<br>~~eee~~|—<br>~~eee~~|V<br>~~eee~~|VGS= 0V, ID= -250µA<br>~~eee~~|
|Zero Gate Voltage Drain Current<br>TJ= +25°C<br>~~eee~~|IDSS<br>~~eee~~|—<br>~~eee~~|—<br>~~eee~~|-1.0<br>~~eee~~|µA<br>~~eee~~|VDS= -20V, VGS= 0V<br>~~eee~~|
|Gate-Source Leakage<br>~~A~~|IGSS<br>~~A~~|—<br>—<br>~~A~~|—<br>—<br>~~A~~|±100<br>±800<br>~~A~~|nA<br>~~A~~|VGS= ±8V, VDS= 0V<br>VGS= ±12V, VDS= 0V<br>~~A~~|
|**ON CHARACTERISTICS(Note 7)**<br>~~RIN~~<br>~~ID UNI~~<br>~~(OO~~|||||||
|Gate Threshold Voltage<br>~~I~~|VGS(TH)<br>~~I~~<br>~~RIN~~|-0.4<br>~~I~~<br>~~ID UN~~|—<br>~~I~~<br>~~UN~~|-0.9<br>~~I~~<br>~~I~~|V<br>~~I~~<br>~~(OO~~|VDS= VGS, ID= -250µA<br>~~I~~<br>~~(OO~~|
|Static Drain-Source On-Resistance<br>~~ee~~|RDS(ON)<br>~~RIN~~<br>~~ee~~<br>~~RTI~~|—<br>~~ID UN~~<br>~~ee~~<br>~~(IIIS~~|63<br>75<br>89<br>~~UN ~~<br>~~ee~~<br>~~I~~|100<br>120<br>160<br> ~~I~~<br>~~ee~~<br>~~I~~|mΩ<br>~~(OO~~<br>~~ee~~<br>~~(I~~|VGS= -4.5V, ID= -1.5A<br>~~(OO~~<br>~~ee~~|
|||||||VGS= -2.5V, ID= -1.2A<br>~~ee~~|
|||||||VGS= -1.8V, ID= -1A<br>~~ee~~<br>~~(OO~~|
|Diode Forward Voltage<br>~~I~~|VSD<br>~~I~~<br>~~RTI~~|—<br>~~I~~<br>~~(IIIS~~|-0.7<br>~~I~~<br>~~I~~|-1.0<br>~~I~~<br>~~I~~|V<br>~~I~~<br>~~(I~~|VGS= 0V, IS= -1.0A<br>~~I~~<br>~~(OO~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~RTI~~<br>~~(IIIS I~~<br>~~I (I (OO~~|||||||
|Input Capacitance<br>~~ne~~|Ciss<br>~~ne~~|—<br>~~ne~~|443<br>~~ne~~|—<br>~~ne~~|pF<br>~~ne~~|VDS= -6V, VGS= 0V<br>f = 1.0MHz<br>~~ne~~|
|Output Capacitance<br>~~ne~~|Coss<br>~~ne~~|—<br>~~ne~~|59<br>~~ne~~|—<br>~~ne~~|pF<br>~~ne~~||
|Reverse Transfer Capacitance<br>~~ne~~|Crss<br>~~ne~~|—<br>~~ne~~<br>~~a~~|47<br>~~ne~~<br>~~a~~|—<br>~~ne~~<br>~~a~~|pF<br>~~ne~~||
|Gate Resistance<br>~~a~~|RG<br>~~a~~|—<br>~~a~~<br>~~a~~|8.5<br>~~a~~<br>~~a~~|—<br>~~a~~<br>~~a~~|Ω<br>~~a~~|VGS= 0V, VDS= 0V, f = 1.0MHz<br>~~a~~|
|Total Gate Charge<br>~~a~~<br>~~ss~~|Qg<br>~~a~~<br>~~ss~~|—<br>~~a~~<br>~~a~~<br>~~ss~~|6.0<br>~~a~~<br>~~a~~<br>~~ss~~|—<br>~~a~~<br>~~a~~<br>~~ss~~|nC<br>~~a~~<br>~~ss~~|VGS= -4.5V, VDS= -10V, ID= -<br>3A<br>~~a~~<br>~~ss~~<br>~~ae~~|
|Gate-Source Charge<br>~~ss~~<br>~~**—**——~~|Qgs<br>~~ss~~|—<br>~~a~~<br>~~ss~~|0.6<br>~~a~~<br>~~ss~~|—<br>~~a~~<br>~~ss~~<br>~~ae~~|nC<br>~~ss~~<br>~~ae~~||
|Gate-Drain Charge<br>~~ss~~<br>~~**—**——~~|Qgd<br>~~ss~~|—<br>~~ss~~|1.8<br>~~ss~~|—<br>~~ss~~<br>~~ae~~|nC<br>~~ss~~<br>~~ae~~||
|Turn-On DelayTime<br>~~**—**——~~|tD(ON)|—|4.0|—<br>~~ae~~|ns<br>~~ae~~|VDS= -10V, VGS= -4.5V,<br>RL= 10Ω, RG= 1.0Ω, ID= -1A<br>~~ae~~|
|Turn-On Rise Time<br>~~**—**——~~|tR|—|3.7|—<br>~~ae~~|ns<br>~~ae~~||
|Turn-Off DelayTime<br>~~**—**——~~<br>~~———~~|tD(OFF)<br>~~———~~|—<br>~~———~~|24.5<br>~~———~~|—<br>~~ae~~<br>~~———~~|ns<br>~~ae~~<br>~~———~~||
|Turn-Off Fall Time<br>~~**—**——~~<br>~~———~~|tF<br>~~———~~|—<br>~~———~~|9.5<br>~~———~~|—<br>~~ae~~<br>~~———~~|ns<br>~~ae~~<br>~~———~~||
|Reverse RecoveryTime<br>~~**—**——~~<br>~~ee~~|tRR<br>~~ee~~|—<br>~~ee~~|8.3<br>~~ee~~|—<br>~~ae~~<br>~~ee~~|ns<br>~~ae~~<br>~~ee~~|IF= -1.0A, di/dt = 100A/μs<br>~~ae~~<br>~~ee~~|
|Reverse RecoveryCharge<br>~~ee~~|QRR<br>~~ee~~|—<br>~~ee~~|2.0<br>~~ee~~|—<br>~~ee~~|nC<br>~~ee~~|IF= -1.0A, di/dt = 100A/μs<br>~~ee~~|



- Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 

   8. Guaranteed by design. Not subject to product testing. 

2 of 7 **www.diodes.com** 

DMP2110UW Document number: DS41139  Rev. 4 - 2 

July 2020 © Diodes Incorporated 

**DMP2110UW** 

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20 10<br>VGS = -3.0V VDS = -5V<br>18<br>VGS = -3.5V<br>16 VGS = -2.5V 8<br>) VGS = -4.0V )<br>T [(A] 14 VGS = -2.2V [A] T [(]<br>NERR 12 VGS = -4.5V VGS = -2.0V NERR 6<br>UC 10 UC TA = 85°C<br>I [N] ARD 8 ” ZZ VGS = -1.8V I [N] ARD 4 T A = 125°C i)<br>, D 6 , D<br>I I T A = 150°C TA = 25°C<br>4 fo VGS = -1.5V 2<br>2<br>[/-——— Wh T A = -55°C<br>0 Ane 0 ae<br>0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2<br>-VDS, DRAIN-SOURCE VOLTAGE (V) -VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristics Figure 2 Typical Transfer Characteristics<br>) 0.14 ) 0.18<br>( (EC 0.16 ID = -1.5A<br>N [CE] N<br>T [A] 0.12 AT 0.14 ID = -1.2A<br>I [S] S pt VGS = -1.8V pet | I [S] SE . ID = -1.0A<br>0.12<br>[RE] N [-] O 0.1 VGS = -2.5V - [R] NO<br>E 0.1<br>C<br>tt | R |<br>U [RCE] 0.08<br>O 0.08 VGS = -4.5V O [U]<br>[S] See - [S] py | | | |<br>0.06<br>I [N-] I [N] A<br>R<br>D [RA] 0.06 aoa D 0.04 ERE<br>, ) , )<br>O [N] O [N]<br>(S (S 0.02<br>RD RD<br>0.04 | tL 0 EEE<br>0 pt 2 4 6 ne 8 10 0 er 2 4 6 8 10 12<br>-ID, DRAIN SOURCE CURRENT (A) -VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3 Typical On-Resistance vs.  Figure 4 Typical Drain-Source On-Resistance<br>Drain Current and Gate Voltage  vs. Gate-Source Voltage<br>)( 0.14 VGS = -4.5V 2.2<br>2<br>N [CE] 0.12 )D<br>T [A] i tt E ttt<br>I [S] S TA = 150°C I [Z] L 1.8 VGS = -4.5V<br>A<br>0.1 TA = 125°C O [URCE] MR 1.6 ID = -1.5A<br>O [N-RE] VGS = -2.5V<br>TA = 85°C<br>0.08 BBSane = = I [N-S] [NO] ( ssnieee ID = -1.2A tt tt<br>1.4<br>O [URCE] TA = 25°C D [RA] N [CE] A VGS = -1.8V<br>0.06 , [)] N T 1.2 ID = -1.0A<br>I [N-S] pt ae I [S] S (CT yy<br>[S(O] D<br>D [RA] TA = -55°C R R [E] 1<br>, )O [N] 0.04 Tf | N [-] O SERED” age<br>R(SD 0.8<br>0.02<br>0 || 2 tT 4 | 6 8 10 0.6 arePETIT<br>-IFigure 5 Typical On-Resistance vs. D, DRAIN SOURCE CURRENT (A) -50 -25TJ, JUNCTION TEMPERATURE (0 25 50 75 100 125 150C) 175<br>Drain Current and Temperature  Figure 6 On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A)<br>D , DRAIN CURRENT (A)<br>-I D<br>-I<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)  , DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON) DS(ON)<br>R R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)  , DRAIN-SOURCE ON-RESISTANCE<br>DS(ON) DS(ON)<br>R R<br>**----- End of picture text -----**<br>


3 of 7 **www.diodes.com** 

DMP2110UW Document number: DS41139  Rev. 4 - 2 

July 2020 

© Diodes Incorporated 

**DMP2110UW** 

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) 0.15 1<br>(<br>N [CE] [V)]<br>T [A] I [S] S 0.12 VIDGS= -1.0A= -1.8V [E(] G 0.8<br>BEDRRDDZE SURRDEEEE<br>0.09 [OLTA] DV ID = -1mA<br>O [N-RE] ter O [L] 0.6 PRU ID = -250µA<br>[SH] E<br>O [URCE] 0.06 oman VGS = -2.5V R SX<br>0.4<br>ID = -1.2A T [H]<br>I [N-S] A VGS = -4.5V<br>R ID = -1.5A [ATE] G<br>D, 0.03 ar LLL , 0.2 LELLLEN.<br>( [on)] D [S] ( [TH)] G [S]<br>R V<br>0<br>0<br>-50 -25 0 25 50 75 100 125 150 175<br>-50 -25 0 25 50 75 100 125 150 175<br>Figure 7 On-Resistance Variation with TemperatureT , JUNCTION TEMPERATURE (J C) TA, AMBIENT TEMPERATURE (°C)<br>Figure 8 Gate Threshold Variation vs. Ambient Temperature<br>20 10000<br>f = 1MHz<br>15 || [_—ee —ee es ee<br>1000<br>C iss<br>TA = 85°C<br>10 TA = 125°C ft ——___<br>100<br>TA= 25°C Coss<br>5 ON<br>TA = 150°C WA ee a C rss<br>TA= -55°C<br>0 FF 10<br>0 0.3 0.6 0.9 1.2 1.5 0 4 8 12 16 20<br>V-VSDSD, SOURCE-DRAIN VOLTAGE (V), SOURCE-DRAIN VOLTAGE (V)  -VV DSDS, DRAIN-SOURCE VOLTAGE (V), DRAIN-SOURCE VOLTAGE (V)<br>Figure 9 Diode Forward Voltage vs. CurrentFigure 9 Diode Forward Voltage vs. Current  Figure 10 Typical Junction CapacitanceFigure 9 Typical Junction Capacitance<br>10 100 RRDDS(on)S(ON)<br>LiLi mited<br>PW = 1ms<br>8 PW = 100µs<br>/ EE ae tt<br>10<br>6 P W  = 10ms<br>VDS = -10V 1 DC<br>ID = -3.0A PW = 10s<br>4 PW = 1s<br>PW = 100ms HO ANN<br>2 0.1 TJ(max)  = 150°C<br>T A  = 25°C<br>VV GS GS = -4.5V  = 4.5V<br>Single Pulse<br>0 [ 0.01 DUT on 1 * MRP Board CoCo<br>0 2 4 6 8 10 12 14 0.1 1 10 100<br>Qg, TOTAL GATE CHARGE (nC) -VVDSDS , DRAIN-SOURCE VO LTAGE (V)LTAGE (V)<br>Figure 11 Gate Charge Figure  12 SOA, Safe Operation Area12 SOA, Safe Operation Area<br>, GATE THRESHOLD VOLTAGE (V)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>GS(TH)<br>DS(ON) -V<br>R<br>, SOURCE CURRENT (A)<br>S<br>-I<br>, DRAIN CURRENT (A)<br>D<br>-I<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>-V GS<br>, GATE THRESHOLD VOLTAGE (V)<br>V<br>S<br>, SOURCE CURRENT (A)<br>I<br>D<br>, DRAIN CURRENT (A)<br>I<br>, JUNCTION CAPACITANCE (pF)<br>CT<br>**----- End of picture text -----**<br>


4 of 7 **www.diodes.com** 

DMP2110UW Document number: DS41139  Rev. 4 - 2 

July 2020 © Diodes Incorporated 

**DMP2110UW** 

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1<br>en D = 0.9<br>D = 0.7<br>i on ee i a<br>ae D = 0.5 Aea eeeAcer|ae etee<br>EE D = 0.3 cece cm<br>Lil ETAT TI De ITE ITI EET ETT ETT<br>0.1 SOHH D = 0.1 EeEEEOm UT LIAM TTA EIT UT<br>EC tr Aga cteet<br>IG D = 0.05 eee<br>Se<br>eT TT TM<br>D = 0.02<br>0.01 BANeR D = 0.01 AMeELT IN TIM T TI TT ETT TI<br>D = 0.005<br>cacti[|[| TY| D = Single Pulse meetPUPTT mvTPTTeeTETmee eee meet eee<br>LT TT TET ETT] |<br>RθJA(t) = rRƟJA (t)  * R= r(t) * RθJA ƟJA<br>R Duty Cycle, D = t1 / t2θJA  = 228.1 RDuty Cycle, D = t1/ t2ƟJA  = 228.1°C/W ℃ /W<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 100000 1000000<br>t1, PULSE DURATION TIMES (sec)t1, PULSE DURATION TIME (sec)<br>Figure 13  TrFigure 13 Tr a nsinsi e nt Thermnt Therm a l l Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


5 of 7 **www.diodes.com** 

DMP2110UW Document number: DS41139  Rev. 4 - 2 

July 2020 © Diodes Incorporated 

**DMP2110UW** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT323** 

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||||||||
|---|---|---|---|---|---|---|
|D|
|SOT323|
|A2|
|Dim|Min|Max|Typ|
|A1|0.00|0.10|0.05|
|c|a|A2 b|00..2905|1.0.4000|00..9530|
|A1|e|L|
|oo|Jo,|FE|c|0.10|0.18|0.11|
|D|1.80 2.20|2.15|
|b|E|2.00|2.20|2.10|
|E1|1.15|1.35|1.30|
|e|0.650 BSC|
|e1|1.20|1.40|1.30|
|F|0.375|0.475|0.425|
|L|0.25|0.40|0.30|
|a|0°|8°|--|
|E|E1|
|All Dimensions in mm|
|=|
|ye|
|F|e1|

**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT323** 

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X<br>Y<br>Value<br>Dimensions<br>(in mm)<br>t n C  0.650<br>Y1 G G  1.300<br>X  0.470<br>Y  0.600<br>Y1  2.500<br>C<br>oo =<br>**----- End of picture text -----**<br>


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DMP2110UW Document number: DS41139  Rev. 4 - 2 

July 2020 © Diodes Incorporated 

**DMP2110UW** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2020, Diodes Incorporated 

**www.diodes.com** 

7 of 7 **www.diodes.com** 

DMP2110UW Document number: DS41139  Rev. 4 - 2 

July 2020 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMP2110UW-7/power-mosfet-p-channel-20-v-2-a-0063-ohm-sot-323)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmp2110uw-7/mosfet-p-ch-20v-2a-sot-323/dp/3943730RL)
---

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