# Power MOSFET, P Channel, 20 V, 200 mA, 5 ohm, X2-DFN1006, Surface Mount

![Product image](https://novapart.co/image/farnell:3943728/)

**URL**: https://novapart.co/products/DMP210DUFB4-7B/power-mosfet-p-channel-20-v-200-ma-5-ohm-x2
**SKU**: DMP210DUFB4-7B
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0450
**Stock**: 10+

## Description

Available until stocks are exhausted

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (15-Jan-2018) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 350mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | X2-DFN1006 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 200mA |
| Drain Source On State Resistance | 5ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943728/)

**DMP210DUFB4** Cd 

## **P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON)**|**ID**<br>**TA = +25°C**|
|-20V|5Ω@VGS= -4.5V|-200mA|
||7Ω@VGS= -2.5V|-170mA|
||10Ω@VGS= -1.8V|-140mA|
||15Ω@VGS= -1.5V|-50mA|



## **Features and Benefits** 

- P-Channel MOSFET 

- Low On-Resistance 

- Very Low Gate Threshold Voltage VGS(TH) 

- Low Input Capacitance 

- Fast Switching Speed 

- Ultra-Small Surfaced Mount Package 

- Ultra-Low Package Profile, 0.4mm Maximum Package Height 

- **ESD Protected Gate** 

## **Description** 

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

## **Applications** 

   - **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

   - **Halogen and Antimony Free. “Green” Device (Note 3)** 

   - **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/** 

- DC-DC Converters 

- Power Management Functions 

## **Mechanical Data** 

- Case: X2-DFN1006-3 

- Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal Connections: See Diagram 

- Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 **e4** 

- Weight: 0.001 grams (Approximate) 

## **X2-DFN1006-3** 

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h) &<br>ESD protected<br>**----- End of picture text -----**<br>


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Bottom View<br>**----- End of picture text -----**<br>


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D<br>S G<br>D<br>G<br>i Gate Protection  &<br>Top View  Diode S<br>Internal Schematic  Equivalent Circuit<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMP210DUFB4-7|X2-DFN1006-3|3,000/Tape &Reel|
|DMP210DUFB4-7B|X2-DFN1006-3|10,000/Tape & Reel|



Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and 

Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

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**DMP210DUFB4** 

## **Marking Information** 

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N1  From date code 1527 (YYWW),  N1<br>this changes to:<br>Top View  Top View<br>Dot Denotes Drain Side  Bar Denotes Gate and Source Side<br>DMP210DUFB4-7<br>Peep oH oo +<br>N1<br>Top View<br>Bar Denotes Gate and Source Side  N1 = Part Marking Code<br>DMP210DUFB4-7B<br>Sp<br>N1  N1  N1<br>N1  N1  N1<br>N1  N1  N1<br>**----- End of picture text -----**<br>


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DMP210DUFB4 Document number: DS35026 Rev. 12 - 2 

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**DMP210DUFB4** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|-20|V|
|Gate-Source Voltage|||VGSS|±10|V|
|Continuous Drain Current (Note 5) VGS= -4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-200<br>-160|mA|
|Continuous Drain Current (Note 5) VGS= -1.8V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-140<br>-110|mA|
|Pulsed Drain Current<br>tP= 10µs|||IDM|-600|mA|



## **Thermal Characteristics** 

|**Thermal Characteristics**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)|PD|350|mW|
|Thermal Resistance,Junction to Ambient(Note 5)|RθJA|357|°C/W|
|Operatingand Storage Temperature Range|TJ, TSTG|-55 to +150|°C|



**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~ee~~|**Symbol**<br>~~ee~~|**Min**<br>~~ee~~|**Typ**<br>~~ee~~|**Max**<br>~~ee~~|**Unit**<br>~~ee~~|**Test Condition**<br>~~ee~~|
|**OFF CHARACTERISTICS**(Note 6)<br>~~ee~~|||||||
|Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~|-20<br>~~ee~~|<br>~~ee~~|<br>~~ee~~|V<br>~~ee~~|VGS= 0V,ID= -250µA<br>~~ee~~|
|Zero Gate Voltage Drain Current<br>~~a~~|IDSS<br><br>~~ee~~|<br><br><br>~~ee~~|<br><br><br>~~ee ee~~|-100<br>-50<br><br>~~ee~~|nA<br>nA<br><br>~~ee~~|VDS= -16V, VGS= 0V<br>VDS= -5.0V,VGS= 0V<br><br>~~ee~~|
|Gate-Source Leakage<br>~~ee~~|IGSS<br>~~ee~~<br>~~ee~~|<br>~~ee~~<br>~~ee~~|<br>~~ee~~<br>~~ee ee~~|100<br>1<br>10<br>~~ee~~<br>~~ee~~|nA<br>µA<br>µA<br>~~ee~~<br>~~ee~~|VGS=5.0V, VDS= 0V<br>VGS=8.0V, VDS= 0V<br>VGS=10.0V,VDS= 0V<br>~~ee~~<br>~~ee~~|
|**ON CHARACTERISTICS**(Note 6)<br>~~ee ee ee ee~~|||||||
|Gate Threshold Voltage@TJ= +25°C|VGS(TH)|-0.5||-1.0|V|VDS= VGS,ID= -250µA|
|Gate Threshold Voltage  (Note 7)        @TJ= 0°C<br>@TJ= +85°C<br>@TJ= +100°C|= +85°C<br>= +100°C<br>VGS(TH)|-0.55||-1.05|V|VDS= VGS, ID= -250µA|
|||-0.40||-0.90|||
|||-0.35||-0.85|||
|Static Drain-Source On-Resistance<br>~~CEE~~|RDS(ON)<br>~~CEE~~|<br>~~CEE~~|<br>~~CEE~~|5<br>~~CEE~~|Ω<br>~~CEE~~|VGS= -4.5V,ID= -100mA<br>~~CEE~~|
|||<br>~~CEE~~|<br>~~CEE~~|7<br>~~CEE~~||VGS= -2.5V,ID= -50mA<br>~~CEE~~|
|||<br>~~CEE~~|<br>~~CEE~~|10<br>~~CEE~~||VGS= -1.8V,ID= -20mA<br>~~CEE~~|
|||<br>~~CEE~~|<br>~~CEE~~|15<br>~~CEE~~||VGS= -1.5V,ID= -10mA<br>~~CEE~~|
|||<br>~~CEE~~|20<br>~~CEE~~|<br>~~CEE~~||VGS= -1.2V,ID= -1mA<br>~~CEE~~|
|Forward Transfer Admittance||YFS|||200||mS|VDS= -10V,ID= -200mA|
|Diode Forward Voltage(Note 5)|VSD|-0.5||-1.2|V|VGS= 0V,IS= -115mA|
|**DYNAMIC CHARACTERISTICS**(Note 7)<br>~~a~~|||||||
|Input Capacitance<br>~~———————~~|Ciss<br>~~———————~~<br>~~a~~|<br>~~———————~~|13.72<br>~~———————~~|175<br>~~———————~~|pF<br>~~———————~~|VDS= -15V, VGS= 0V<br>f = 1.0MHz<br>~~———————~~|
|Output Capacitance<br>~~———————~~|Coss<br>~~———————~~<br>~~a~~|<br>~~———————~~|4.01<br>~~———————~~|30<br>~~———————~~|pF<br>~~———————~~||
|Reverse Transfer Capacitance<br>~~———————~~|Crss<br>~~———————~~<br>~~a~~|<br>~~———————~~|2.34<br>~~———————~~|20<br>~~———————~~|pF<br>~~———————~~||
|**SWITCHING CHARACTERISTICS**(Note 7)<br>~~a~~|||||||
|Turn-On DelayTime<br>~~ee~~|tD(ON)<br>~~ee~~|<br>~~ee~~|7.7<br>~~ee~~|<br>~~ee~~|ns<br>~~ee~~|VGS= -4.5V, VDD= -15V<br>ID= -180mA, RG= 2.0Ω<br>~~ee~~|
|Rise Time<br>~~ee~~|tR<br>~~ee~~|<br>~~ee~~|19.3<br>~~ee~~|<br>~~ee~~|||
|Turn-Off DelayTime<br>~~ee~~|tD(OFF)<br>~~ee~~|<br>~~ee~~|25.9<br>~~ee~~|<br>~~ee~~|||
|Fall Time<br>~~ee~~|tF<br>~~ee~~|<br>~~ee~~|31.5<br>~~ee~~|<br>~~ee~~|||



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0.6 0.6<br>VGS= -4.5V<br>0.5 0.5<br>| ete pe MY<br>0.4 0.4<br>BEEP AZane Siunae/<br>0.3 0.3<br>A oun<br>VGS= -2.5V<br>0.2 0.2<br>fo eee<br>VGS= -1.8V<br>0.1 0.1<br>PZannnEs VGS= -1.5V fr<br>VGS= -1.2V VDSV = -5DS=5 .0V<br>0 0 TVA<br>0 _—_——= 0.5 1 1.5 2 2.5 3 3.5 4 0 ALL 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6<br>VDS, DRAIN-SOURCE VOLTAGE(V) VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics<br>100 10<br>VVGSGS = -4.5V =4.5V<br>9<br>Ave RDS(ON) (R) @ 150C<br>8<br>RRDS(ON) DS(ON)(Ω) Ave @V () Ave @ VGSGS = -1.5V =1.5V 7<br>Ave RDS(ON) (R) @ 125C<br>6<br>10 hnaA 5 OM,<br>RDS(ON)RDS(ON)(Ω) Ave @V () Ave @ VGS = -1.8V GS=1.8V 4 Ave RDS(ON) (R) @ 85C<br>a RDS(ON)RDS(ON)(Ω) Ave @V () Ave @ VGS = -2.5V GS=2.5V 3 Ave R DS(ON)  (R) @ 25C<br>Shit RRDS(ON) DS(ON)(Ω) Ave @V () Ave @ VGS = -4.5V GS=4.5V 2 Ave RDS(ON) (R) @ -55C —<br>1<br>1 LUI TTI HI 0 eea<br>0.001 0.01 0.1 1 0 0.1 0.2 0.3 0.4 0.5<br>ID, DRAIN-SOURCE CURRENT (A)  IID, DRAIN CURRENT (A)D,<br>Fig. 3 Typical On-Resistance vs.  Fig. 4 Typical On-Resistance vs.<br>Drain Current and Gate Voltage Drain Current and Temperature<br>1.6 12<br>RDS(ON)RDS(ON)(Ω)   ()<br>@V@VGS = -4.5V, IGS=4.5V, ID = -200mAD=200mA<br>10<br>1.4 ti<br>yy LITT<br>8<br>1.2 TTA R@VDS(ON)R@VDS(ON)GSGS= -2.5V, I(Ω)  =2.5V, I() DD = -50mA =50mA TTL<br>“ R@VDS(ON)R@VGSDS(ON)GS= -2.5V, I(Ω)  =2.5V, I() D = -5D=5 0mA 6 ett<br>1 ee<br>4<br>RDS(ON)RDS(ON)(Ω)  ()<br>@V@VGS = -4.5V, IGS=4.5V, ID D= -= 200m AA<br>0.8<br>ar) 2 eee<br>A faa<br>0.6 ti 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ( Et C) iy ) = CEE TJ, JUNCTION TEMPERATURE (C)<br>Fig. 5 On-Resisitance Variation with Temperature Fig. 6 On-Resisitance vs.Temperature<br>(Normalized)<br>, DRAIN-SOURCE ON-RESISTANCE<br>R<br>DS(ON)<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>, DRAIN CURRENT (A)<br>ID<br>DS(ON)<br>(Normalized)<br>, DRAIN-SOURCE ON-RESISTANCE<br>R<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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1.4 0.6<br>1.2<br>0.5<br>1.0<br>0.4 TA= 25C<br>IDID = -1mA = 1mA<br>ee |<br>0.8<br>0.3<br>0.6 a I D I D = -250 = 250µA A<br>0.2<br>0.4<br>coors SC LE<br>0.1<br>0.2<br>0 0<br>-50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1 1.2<br>TJ, JUNCTION TEMPERATURE (C) VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 7 Gate Threshold V ariation vs. Ambient Temperatureariation vs. Junction Temperature  Fig. 8 Diode Forward Voltage vs. Current<br>100 a YO | 10,000 oe<br>a f = 1MHz EB TA = 150  C<br>eee ——— re —<br>aee aee ee ee ee 1,000 |aS ee<br>eea ee ee ee 100 oeSa eee ——<br>Peet err<br>LK Ciss —_———_———_—_——————— TA = 85C<br>10 | ==<br>I a a =e<br>10<br>ee Coss ee ee ee T A  = 25C<br>1<br>a seee24e<br>C rss =<br>T A  = -55C<br>1 0.1 ARS<br>0 4 8 12 16 20 0 | 2 [ff] 4 | 6 tT 8 | 10 ft | 12 14 16 t= 18 || 20<br>VDS, DRAIN-SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE(V)<br>Fig. 9 Typical Junction Capacitance Fig. 10 Typical Drain-Source Leakage Current vs. Voltage<br>1 1<br>tt D = 0.7<br>D = 0.5<br>e gg ER AL ee<br>c<br>D = 0.3<br>LE | EIT TTI) ee TTT ETT PETTITTE<br>0.1 STALRe D = 0.1 ATL LILEEE LANL LIM<br>SENe<br>D = 0.05 D = 0.9<br>tt ence) Oe<br>7 D = 0.02 00 RR JA JA(t)  = 369= r(t) 癈o*CR /W JA LTH<br>0.01 ALETI D = 0.01 AIM FALI PEELLLL P(pk) eee|<br>aLER | t1 | | | E HHE<br>ee D = 0.005 Acee eee ee a T J  - T A  = P * Rt 2 JA (t) CoCo<br>D = Single Pulse Duty Cycle, D = t1/t2<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (s)<br>Fig. 11 Transient Thermal Response<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, SOURCE CURRENT (A)<br>IS<br>, GATE THRESHOLD VOLTAGE (V)<br>V<br>GS(th)<br>r(t), TRANSIENT THERMAL RESISTANCE<br>, LEAKAGE CURRENT (nA)<br>IDSS<br>**----- End of picture text -----**<br>


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**DMP210DUFB4** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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X2-DFN1006-3<br>X2-DFN1006-3<br>i A | Dim  ti Min  Max T :C~—‘CsiszC yp<br>A   0.40  <br>A1  0.00 0.05 0.03<br>Seating Plane b 0.10 0.20 0.15<br>LI A 1 - b2  0.45 0.55 0.50<br>D  0.95 1.05 1.00<br>D<br>E  0.55 0.65 0.60<br>Pin #1 ID e    0.35<br>b (2x)<br>L1  0.20 0.30 0.25<br>L2  0.20 0.30 0.25<br>k    0.40<br>z  0.02  0.08 0.05<br>i E b2 a=, e be All Dimensions in mm<br>weHEF , — —<br>L2 k z<br>L1<br>yout out<br>for the latest version.<br>X2-DFN1006-3<br>X2<br>G1 Dimensions  Value ((in mm)<br>G2 C  0.350.350350<br>a G1  0.150.15050<br>G2 2  0.075.075075755<br>X  0.450.45050<br>Y1 C X1  0.600.600600<br>| X2 Y Y  1.20.200000.20000.20000000000<br>ai: Y1  0.550.550550<br>X X Y<br>X1<br>ele =e<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout out** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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Dimensions  Value ((in mm)<br>C  0.350.350350<br>G1  0.150.15050<br>G2 2  0.075.075075755<br>X  0.450.45050<br>X1  0.600.600600<br>X2 Y Y  1.20.200000.20000.20000000000<br>Y1  0.550.550550<br>**----- End of picture text -----**<br>


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DMP210DUFB4 Document number: DS35026 Rev. 12 - 2 

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**DMP210DUFB4** 

## **IMPORTANT NOTICE** 

1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 

3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 

4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document. 

5. Diodes products are provided subject to Diodes’ Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/)  or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 

6. Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 

7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 

8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. 

Copyright © 2020 Diodes Incorporated 

**www.diodes.com** 

7 of 7 **www.diodes.com** 

DMP210DUFB4 Document number: DS35026 Rev. 12 - 2 

November 2020 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMP210DUFB4-7B/power-mosfet-p-channel-20-v-200-ma-5-ohm-x2)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmp210dufb4-7b/mosfet-p-ch-20v-0-2a-x2-dfn1006/dp/3943728)
---

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