# MOSFET, P-CH, -2.9A, -20V, X2-DSN1006

![Product image](https://novapart.co/image/farnell:3276203/)

**URL**: https://novapart.co/products/DMP2088LCP3-7/mosfet-p-ch-29a-20v-x2-dsn1006
**SKU**: DMP2088LCP3-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1480
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Power Dissipation | 1.13W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | P Channel |
| Power Dissipation Pd | 1.13W |
| Rds(On) Test Voltage | 8V |
| On Resistance Rds(On) | 0.073ohm |
| Transistor Case Style | X2-DSN1006 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 2.9A |
| Drain Source On State Resistance | 0.073ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3276203/)

**DMP2088LCP3 20V P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON) Max**|**ID **<br>**TA = +25°C**|
|-20V|88mΩ @ VGS= -8V|-2.9A|
||105mΩ @ VGS= -4.5V|-1.8A|



## **Features and Benefits** 

- Low Qg & Qgd 

- Small Footprint 

- Low Profile 0.30mm Height 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Description** 

This new generation MOSFET is designed to minimize the footprint in handheld and Mobile application. It can be used to replace many small signals MOSFET with as really small footprint. 

## **Mechanical Data** 

- Case: X2-DSN1006-3 

- Terminal Connections: See Diagram Below 

## ~~el~~ 

## **Applications** 

   - Terminals: Finish – Matte Tin Annealed over Copper Pillar oO **e3** 

- Battery Management 

- Load Switch 

- Battery Protection 

- Handheld and Mobile Application 

**==> picture [55 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
X2-DSN1006-3<br>**----- End of picture text -----**<br>


Top View Equivalent Circuit 

## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging **|
|DMP2088LCP3-7|X2-DSN1006-3|3000/Tape & Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and 

Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

B = Product Type Marking Code YM = Date Code Marking Y or ~~_~~ Y = Year (ex: F = 2018) M or M = Month (ex: 9 = September) 

Date Code Key 

|Date Code Key|||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**Year**|**2014**|**2015**|**2016**|**2017**|**2018**|**2019**|**2020**|**2021**|**2022**|**2023**|**2024**|**2025**|
|**Code**|B|C|D|E|F|G|H|I|J|K|L|M|
||||||||||||||
|**Month**|**Jan**|**Feb**|**Mar**|**Apr**|**May**|**Jun**|**Jul**|**Aug**|**Sep**|**Oct**|**Nov**|**Dec**|
|**Code**|1|2|3|4|5|6|7|8|9|O|N|D|



1 of 7 **www.diodes.com** 

DMP2088LCP3 Document number: DS38475  Rev. 4 - 2 

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**DMP2088LCP3** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|-20|V|
|Gate-Source Voltage|||VGSS|-12|V|
|Continuous Drain Current (Note 5) VGS= -8V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-2.9<br>-2.4|A|
|Continuous Drain Current (Note 5) VGS= -4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-1.8<br>-1.4|A|
|Pulsed Drain Current (Note 6)|||IDM|-15|A|
|Human Body Model (HBM)|||V(ESD)|4|kV|



## **Thermal Characteristics** 

|**Electrical Characteristics**(@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 8)**<br>~~————————~~|||||||
|Drain-Source Breakdown Voltage<br>~~————————~~|BVDSS<br>~~————————~~|-20<br>~~————————~~|—<br>~~————————~~|—<br>~~————————~~|V<br>~~————————~~|VGS= 0V, ID= -250μA<br>~~————————~~|
|Zero Gate Voltage Drain Current TJ= +25°C<br>~~————————~~|IDSS<br>~~————————~~|—<br>~~————————~~|—<br>~~————————~~|-100<br>~~————————~~|nA<br>~~————————~~|VDS= -16V, VGS= 0V<br>~~————————~~|
|Gate-Source Leakage<br>~~Ce~~|IGSS<br>~~Ce~~|—<br>~~Ce~~|—<br>~~Ce~~|-50<br>~~Ce~~|nA<br>~~Ce~~|VGS= -12V, VDS= 0V<br>~~Ce~~|
|**ON CHARACTERISTICS(Note 8)**|||||||
|Gate Threshold Voltage|VGS(TH)|-0.7|-1.0|-1.2|V|VDS= VGS, ID= -250μA|
|Static Drain-Source On-Resistance<br>~~fe~~|RDS(ON)|—|73|88|mΩ|VGS= -8V, ID= -0.5A|
|||—|90|105||VGS= -4.5V, ID= -0.5A|
|||—|143|174||VGS= -2.5V, ID= -0.5A|
|||—|266|750||VGS= -1.8V, ID= -0.1A|
|Forward Transfer Admittance||Yfs||—<br>~~ee~~|3.4<br>~~GO~~<br>~~ee~~|—<br>~~GO~~<br>~~ee~~|S<br>~~(S(O~~<br>~~ee~~|VDS= -10V, ID= -0.5A<br>~~(S(O~~|
|Diode Forward Voltage<br>~~sD~~|VSD<br>~~sD~~|—<br>~~sD~~<br>~~ee~~|-0.75<br>~~sD~~<br>~~GO~~<br>~~ee~~|-1.0<br>~~sD~~<br>~~GO~~<br>~~ee~~|V<br>~~sD~~<br>~~(S(O~~<br>~~ee~~|VGS= 0V, IS= -0.5A<br>~~sD~~<br>~~(S(O~~|
|Reverse RecoveryCharge<br>~~se~~|QRR<br>~~se~~|—<br>~~se~~<br>~~ee~~|1.0<br>~~GO~~<br>~~se~~<br>~~ee~~|—<br>~~GO ~~<br>~~se~~<br>~~ee~~|nC<br> ~~(S(O~~<br>~~se~~<br>~~ee~~|VDD= -10V, IF= -1A,<br>di/dt = 100A/μs<br>~~(S(O~~<br>~~se~~|
|Reverse Recovery Time<br>~~se~~|tRR<br>~~se~~|—<br>~~se~~<br>~~ee~~|5.7<br>~~se~~<br>~~ee~~|—<br>~~se~~<br>~~ee~~|ns<br>~~se~~<br>~~ee~~||
|**DYNAMIC CHARACTERISTICS(Note 9)**<br>~~ee ee ee~~<br>~~ee~~|||||||
|Input Capacitance<br>~~a~~|Ciss<br>~~a~~|—<br>~~a~~|121<br>~~a~~|160<br>~~a~~|pF<br>~~a~~|VDS= -10V, VGS= 0V,<br>f = 1.0MHz<br>~~a~~<br>~~ee~~|
|Output Capacitance<br>~~a~~|Coss<br>~~a~~|—<br>~~a~~|66<br>~~a~~|100<br>~~a~~|||
|Reverse Transfer Capacitance<br>~~a~~|Crss<br>~~a~~|—<br>~~a~~|4.3<br>~~a~~|8<br>~~a~~|||
|Series Gate Resistance<br>~~———~~|RG|9|18|36<br>~~e~~|Ω<br>~~e~~|f = 1MHz, VGS= 0V, VDS= 0V<br>~~ee~~<br>~~ee~~|
|Total Gate Charge<br>~~———~~|Qg|—|1.1|1.5<br>~~e~~|nC<br>~~e~~<br>~~ee~~|VGS= -4.5V, VDS= -10V,<br>ID= -0.5A<br>~~ee~~<br>~~ee~~|
|Gate-Source Charge<br>~~———~~|Qgs|—|0.17|—<br>~~e~~|||
|Gate-Drain Charge<br>~~———~~|Qgd|—|0.22|—<br>~~e~~|||
|Gate Charge at VTH<br>~~———~~<br>~~—<———~~|Qg(th)|—|0.12|—<br>~~e~~<br>~~ee~~|||
|Turn-On Delay Time<br>~~———~~<br>~~—<———~~|tD(ON)|—|6.3|12<br>~~e~~<br>~~ee~~|ns<br>~~e~~<br>~~ee~~|VDS= -10V, VGS= -4.5V,<br>RG= 2Ω, ID= -0.5A<br>~~ee~~<br>~~ee~~|
|Turn-On Rise Time<br>~~———~~<br>~~—<———~~|tR|—|2.8|—<br>~~e~~<br>~~ee~~|||
|Turn-Off Delay Time<br>~~—<———~~|tD(OFF)|—|17|34<br>~~ee~~|||
|Turn-Off Fall Time<br>~~—<———~~|tF|—|6|—<br>~~ee~~|||



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

Notes: 5. Device mounted on FR-4 material with 1-inch[2 ] (6.45-cm[2] ), 2-oz. (0.071-mm thick) Cu. 6. Repetitive rating, pulse width limited by junction temperature. 

7. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 

8. Short duration pulse test used to minimize self-heating effect. 

9. Guaranteed by design. Not subject to production testing. 

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**DMP2088LCP3** 

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20.0   10<br>-55 [o] C<br>VDS = -5V<br>25 [o] C<br>16.0   VGS = -8.0V  VGS = -4.5V  8  85 [o] C<br>125 [o] C<br>12.0   wea VGS = -3.5V  6  rs 150 [o] C<br>Zee<br>VGS = -3.0V<br>8.0   4<br>fe VGS = -2.5V  a VGS = -2.0V<br>4.0   2<br>VGS = -1.8V  VGS = -1.5V<br>GE<br>|=<br>0.0   0<br>0  0.5  1  1.5  2  2.5  3  0  1  2  3  4<br>VDS, DRAIN-SOURCE VOLTAGE (V)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic  Figure 2. Typical Transfer Characteristic<br>0.18  0.14<br>VGS = -8V<br>0.16  YT<br>VGS = -2.5V  0.12  125 [o] C<br>150 [o] C<br>0.14  ~~ ,<br>| |<br>0.12  p t 0.1<br>| |<br>VGS = -4.5V  85 [o] C<br>0.1  a<br>0.08<br>25 [o] C<br>0.08  rt<br>VGS = -8.0V  0.06<br>0.06  -55 [o] C<br>ee ee<br>p t<br>0.04  0.04<br>| |}<br>0  2  4  6  8  10  0  2  4  6  8  10<br>ID, DRAIN-SOURCE CURRENT (A)   ID, DRAIN CURRENT (A)<br>Figure 3. Typical On-Resistance vs. Drain Current  Figure 4. Typical On-Resistance vs. Drain Current<br>and Gate Voltage   and Junction Temperature<br>1.6  0.14<br>VGS = -4.5V, ID = -500mA<br>1.4  0.12<br>TT oe<br>VGS = -4.5V, ID = -500mA<br>1.2  0.1<br>ay et<br>1  0.08<br>VGS = -8V, ID = -500mA<br>VGS = -8V, ID = -500mA<br>0.8  p en) 0.06  ee<br>ya °c  ane<br>0.6  ton 0.04  eee<br>-50  -25  0  25  50  75  100  125  150  -50  -25  0  25  50  75  100  125  150<br>TJ, JUNCTION TEMPERATURE ( ℃ )  TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 5. On-Resistance Variation with Junction  Figure 6. On-Resistance Variation with Junction<br>Temperature  Temperature<br>, DRAIN CURRENT (A) ID , DRAIN CURRENT (A) ID<br>)  )<br> <br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>)<br>(<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE  , DRAIN-SOURCE ON-RESISTANCE<br>DS(ON) DS(ON)<br>R R<br>**----- End of picture text -----**<br>


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DMP2088LCP3 

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Document number: DS38475  Rev. 4 - 2 

**DMP2088LCP3** 

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1.4  10<br>VGS = 0V<br>1.2  Sf] LL 8  O H<br>1  Ss: ID = -1mA  6  —<br>0.8  oom: ID = -250µA  4  ff<br>TJ = 150 [o] C  TJ = 85 [o] C<br>0.6  H+ NN 2  TJ = 125 [o] C  ef | TJ = 25 [o] C<br>TJ = -55 [o] C<br>0.4  ELE EELao 0  — WfW y f)f<br>-50  -25  0  25  50  75  100  125  150  0  0.3  0.6  0.9  1.2  1.5<br>TJ, JUNCTION TEMPERATURE ( ℃ )  VSD, SOURCE-DRAIN VOLTAGE (V)<br>Figure 7. Gate Thershold Variation vs. Junction   Figure 8. Diode Forward Voltage vs. Current<br>Temperature<br>1000   8<br>f = 1MHz<br>Ciss  6<br>ee /|<br>100<br>Coss<br>— 4<br>Nf<br>10<br>VDS = -10V, ID = -0.5A<br>S a 2  f<br>Crss<br>SS S<br>1   e e =ee ee 0  ee<br>0  5  10  15  20  0  0.5  1  1.5  2<br>VDS, DRAIN-SOURCE VOLTAGE (V)  Qg (nC)<br>Figure 9. Typical Junction Capacitance  Figure 10. Gate Charge<br>, SOURCE CURRENT (A)<br>IS<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br> (V)<br>GS<br>V<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>**----- End of picture text -----**<br>


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100<br>RDS(ON) Limited  PW =10ms  PW =1ms<br>PW =100ms  PW =100µs<br>10<br>1<br>TJ(Max)=150 ℃<br>0.1  TVC GS = 25= -8V  ℃ PW =1s<br>Single Pulse  PW =10s<br>DUT on 1*MRP<br>DC<br>Board<br>0.01  PPh ET<br>0.1  1  10  100<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. SOA, Safe Operation Area<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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300<br>Single Pulse<br>250  RRθJAθJA  = 217(t) = R ℃ θJA/W  * r(t)<br>TJ-TA = P * RθJA (t)<br>200<br>150<br>100  ia a<br>50  a<br>NULL a aa<br>0<br>1E-05  0.0001  0.001  0.01  0.1  1  10  100  1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 12. Single Pulse Maximum Power Dissipation<br>1<br>SSTEE ee<br>E D=0.7  E<br>D=0.5<br>FI HECC eetrer D=0.9  TTItit LECITT<br>D=0.3  ee alll HE LEE ETT<br>CA<br>0.1  P IEe A A |<br>Eo D=0.1  UIE7 Lg ee<br>D=0.05<br>e e<br>an 1a<br>D=0.02<br>eee? A<br>0.01  il SAIN LAINE ETA ELIE LLIN LL<br>Ea D=0.01  Ae| TIE LTE CETTE ELITE ECT Ul<br>EREEE<br>D=0.005<br>C E RθJA (t) = r(t) * RθJA<br>c S CTT<br>RθJA = 217 ℃ /W<br>D=Single Pulse  Duty Cycle, D = t1/t2<br>0.001<br>1E-05  0.0001  0.001  0.01  0.1  1  10  100  1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>, PEAK TRANSIENT POWER (W)<br>(PK)<br>P<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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DMP2088LCP3 Document number: DS38475  Rev. 4 - 2 

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**DMP2088LCP3** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**X2-DSN1006-3** 

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D<br>b2<br>X2-DSN1006-3<br>Dim  Min  Max  Typ<br>La A  --  0.348 0.32<br>A1   --  --  0.08<br>k<br>nai lon a b  0.14  0.16 0.15<br>E e1 b2  0.49 0.51  0.50<br>D  0.56 0.64  0.60<br>E  0.96 1.04  1.00<br>L e --  --  0.35<br>e1  --  --  0.65<br>k  --  --  0.325<br>b L  0.21  0.29 0.25<br>Pin #1 La  0.21  0.29 0.25<br>ul iLt e ———<br>| 4 | All Dimensions in mm  Cd<br>A1 A<br>Seating Plane<br>r e re<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**X2-DSN1006-3** 

X1 

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Value<br>Dimensions<br>(in mm)<br>G  0.30<br>G1  0.20<br>X  0.25<br>G Y1 X1  0.70<br>Y  0.40<br>Y1  1.10<br>Y<br>inane =<br>X<br>G1 — oth =<br>**----- End of picture text -----**<br>


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DMP2088LCP3 Document number: DS38475  Rev. 4 - 2 

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**DMP2088LCP3** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2018, Diodes Incorporated 

**www.diodes.com** 

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