# Power MOSFET, P Channel, 20 V, 4.6 A, 0.037 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:3828421RL/)

**URL**: https://novapart.co/products/DMP2070U-7/power-mosfet-p-channel-20-v-46-a-0037-ohm-sot-23
**SKU**: DMP2070U-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1490
**Stock**: 1000+
**Lead Time**: 106 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.4W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 4.6A |
| Drain Source On State Resistance | 0.037ohm |
| Gate Source Threshold Voltage Max | 950mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3828421RL/)

**DMP2070U** TT **P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON)**|**ID **<br>**TA = +25°C**|
|-20V|44mΩ@VGS= -4.5V|-4.6A|
||57mΩ@VGS= -2.5V|-4A|
||74mΩ@VGS= -1.8V|-3.5A|



## **Features** 

- Low On-Resistance 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- ESD Protected Gate 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.** 

**https://www.diodes.com/quality/product-definitions/** 

## **Description and Applications** 

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. 

## **Mechanical Data** 

   - Case: SOT23 

   - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

- Loadswitch 

- Terminals: FinishMatte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

- Terminal Connections: See Diagram Below 

- Weight: 0.009 grams (Approximate) 

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D<br>SOT23<br>D<br>G<br>ESD PROTECTED  2b ~- & Gate Protection  [— G S<br>Diode S<br>Top View  Internal Schematic  Top View<br>g Information Information (Note 4)<br>Part Number Case Packaging<br>DMP2070U-7  SOT23   3,000 / Tape & Reel<br>DMP2070U-13  SOT23   10,000 / Tape & Reel<br>**----- End of picture text -----**<br>


## **Ordering Information Information** (Note 4) 

- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and 

Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

MT4 = Product Type Marking Code YM = Date Code Marking Y or    = Year (ex: H = 2020) Y M = Month (ex: 9 = September) a _ Date Code Key **Year 2019 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030 Code** G H I J K L M N O P R S **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec** ~~tt~~ **Code** 1 2 3 4 5 6 7 8 9 O N D 

1 of 7 **www.diodes.com** 

DMP2070U Document number: DS42230 Rev. 3 - 2 

April 2021 © Diodes Incorporated 

**DMP2070U** 

## **Maximum Ratings** (@ TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage||VDSS|-20|V|
|Gate-Source Voltage||VGSS|±8|V|
|Continuous Drain Current (Note 7) VGS= -4.5V|TC= +25°C<br>TC= +70°C|ID|-4.6<br>-3.7|A|
|Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)||IDM|-20|A|
|Maximum Continuous Body Diode Forward Current (Note 6)||IS|-1.9|A|
|Avalanche Current, L = 0.1mH (Note 8)||IAS|-14|A|
|Avalanche Energy, L = 0.1mH (Note 8)||EAS|10|mJ|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation (Note 5)||PD|0.83|W|
|Thermal Resistance, Junction to Ambient (Note 5)|Steady State|RθJA|153|°C/W|
|Total Power Dissipation (Note 6)||PD|1.4|W|
|Thermal Resistance, Junction to Ambient (Note 6)|Steady State|RθJA|90|°C/W|
|Thermal Resistance, Junction to Case (Note 7)||RθJC|15.1||
|Operating and Storage Temperature Range||TJ, TSTG|-55 to +150|°C|



**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~es~~|**Symbol**<br>~~es~~|**Min**<br>~~es~~|**Typ**<br>~~es~~|**Max**<br>~~es~~|**Unit**<br>~~es~~|**Test Condition**<br>~~es~~|
|**OFF CHARACTERISTICS(Note 9)**<br>~~es~~|||||||
|Drain-Source Breakdown Voltage<br>~~es~~|BVDSS<br>~~es~~|-20<br>~~es~~|—<br>~~es~~|—<br>~~es~~|V<br>~~es~~|VGS= 0V, ID= -1mA<br>~~es~~|
|Zero Gate Voltage Drain Current<br>~~So~~|IDSS<br>~~So~~|—<br>~~So~~|—<br>~~So~~|-1<br>~~So~~|µA<br>~~So~~|VDS= -20V, VGS= 0V<br>~~So~~|
|Gate-Source Leakage<br>~~So~~|IGSS<br>~~So~~|—<br>~~So~~|—<br>~~So~~|±10<br>~~So~~|µA<br>~~So~~|VGS= ±8V, VDS= 0V<br>~~So~~|
|**ON CHARACTERISTICS(Note 9)**|||||||
|Gate Threshold Voltage<br>~~SS~~|VGS(TH)|-0.45|—|-0.95<br>~~=~~|V|VDS= VGS, ID= -250µA|
|Static Drain-Source On-Resistance<br>~~SS~~<br>~~SS~~|RDS(ON)<br>~~SS~~|—<br>~~SS~~|37<br>~~SS~~|44<br>~~SS~~<br>~~=~~|mΩ<br>~~SS~~|VGS= -4.5V, ID= -2A<br>~~SS~~|
|||—<br>~~SS~~|48<br>~~SS~~|57<br>~~SS~~<br>~~=~~||VGS= -2.5V, ID= -2A<br>~~SS~~|
|||—<br>~~SS~~|65<br>~~SS~~|74<br>~~SS~~<br>~~=~~||VGS= -1.8V, ID= -2A<br>~~SS~~|
|Diode Forward Voltage<br>~~SS~~<br>~~SS~~|VSD<br>~~SS~~|—<br>~~SS~~|-0.7<br>~~SS~~|-1.1<br>~~SS~~<br>~~=~~<br>~~dS~~|V<br>~~SS~~<br>~~dS~~|VGS= 0V, IS= -2.1A<br>~~SS~~<br>~~dSOO~~|
|**DYNAMIC CHARACTERISTICS(Note 10)**<br>~~=~~<br>~~SS~~<br>~~dSOO~~|||||||
|Input Capacitance<br>~~SS~~<br>~~———~~|Ciss<br>~~———~~|—<br>~~———~~|118<br>~~———~~|—<br>~~=~~<br>~~dS~~<br>~~———~~|pF<br>~~dS~~<br>~~———~~|VDS= -10V, VGS= 0V<br>f = 1MHz<br>~~dS OO~~<br>~~———~~|
|Output Capacitance<br>~~SS~~<br>~~———~~|Coss<br>~~———~~|—<br>~~———~~|79<br>~~———~~|—<br>~~=~~<br>~~dS~~<br>~~———~~|||
|Reverse Transfer Capacitance<br>~~———~~|Crss<br>~~———~~|—<br>~~———~~|11<br>~~———~~|—<br>~~———~~|||
|Gate Resistance<br>~~———~~<br>~~CO~~|RG<br>~~———~~<br>~~es~~|—<br>~~———~~|459<br>~~———~~|—<br>~~———~~|Ω<br>~~———~~|VDS= 0V, VGS= 0V, f = 1MHz<br>~~———~~|
|Total Gate Charge(VGS= -8V)<br>~~rs~~<br>~~CO~~|Qg<br>~~rs~~<br>~~es~~|—<br>~~rs~~|8.2<br>~~rs~~|—<br>~~rs~~|nC<br>~~i~~|VDD= -10V, ID= -2A<br>~~ee~~|
|Total Gate Charge(VGS= -4.5V)<br>~~CO~~|Qg<br>~~es~~|—|17.8|—|||
|Gate-Source Charge|Qgs|—|1.4|—|||
|Gate-Drain Charge|Qgd|—|1.2<br>~~i~~|—<br>~~i~~|||
|Turn-On Delay Time<br>~~—<—~~|tD(ON)<br>~~—<—~~|—<br>~~—<—~~|115<br>~~—<—~~<br>~~i~~|—<br>~~—<—~~<br>~~i~~|ns<br>~~—<—~~<br>~~i~~|VGS= -4.5V, VDD= -10V,<br>RG= 1Ω,ID= -2A<br>~~—<—~~<br>~~ee~~|
|Turn-On Rise Time<br>~~—<—~~|tR<br>~~—<—~~|—<br>~~—<—~~|304<br>~~—<—~~<br>~~i~~|—<br>~~—<—~~<br>~~i~~|||
|Turn-Off Delay Time<br>~~—<—~~|tD(OFF)<br>~~—<—~~|—<br>~~—<—~~|780<br>~~—<—~~<br>~~i~~|—<br>~~—<—~~<br>~~i~~|||
|Turn-Off Fall Time<br>~~—<—~~|tF<br>~~—<—~~|—<br>~~—<—~~|666<br>~~—<—~~<br>~~i~~|—<br>~~—<—~~<br>~~i~~|||



Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate . 

7. Thermal resistance from junction to soldering point (on the exposed drain pad) . 

8. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C . 

9. Short duration pulse test used to minimize self-heating effect. 

10. Guaranteed by design. Not subject to product testing. 

2 of 7 **www.diodes.com** 

DMP2070U Document number: DS42230 Rev. 3 - 2 

April 2021 © Diodes Incorporated 

**DMP2070U** 

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20.0<br> V = -2.2V<br>GS<br>15.0  VGS = -2.0V<br>e a<br> VGS = -1.8V<br>10.0<br>|<br>a<br> VGS = -2.5V<br> VGS = -3.0V<br>5.0  VGS = -4.0V  VGS = -1.5V<br> VGS = -4.5V  VGS = -1.2V<br>0.0<br>0 0.5 1 1.5 2 2.5 3<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic<br>0.124<br> VGS = -1.8V<br>0.104<br>0.084<br> VGS = -2.5V<br>0.064<br>0.044<br> VGS = -4.5V<br>0.024<br>0.004 ea:<br>0 5 10 15 20<br>ID, DRAIN-SOURCE CURRENT (A)<br>Figure 3. Typical On-Resistance vs. Drain Current<br>and Gate Voltage<br>0.1<br>0.09 VGS = -4.5V<br>0.08 ee e ee<br>0.07 TJ = 150 ℃<br>TJ = 125 ℃<br>0.06<br>0.05<br>0.04 S TJ = 85 ℃ S<br>0.03 TJ = 25 ℃<br>0.02 TJ = -55 ℃<br>————<br>0.01<br>0 es eea<br>0 5 10 15 20<br>ID, DRAIN CURRENT (A)<br>Figure 5. Typical On-Resistance vs. Drain Current<br>and Junction Temperature<br>, DRAIN CURRENT (A)<br>ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>,  DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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30<br>VDS = -5V<br>25<br>| [F] [f]<br>20<br>15<br>10<br>5 TJ = 150 ℃ TJ = 85 ℃<br>TJ = 125 ℃ TJ = 25 ℃<br>TJ = -55 ℃<br>0<br>0 1 2 3 4<br>VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 2. Typical Transfer Characteristic<br>0.2<br>0.18<br>0.16 ee<br>0.14 ee<br>0.12 ee<br>ID = -2A<br>0.1 ee<br>0.08 ee<br>0.06 es<br>0.04 a<br>0.02 oo<br>0 ee |<br>0 2 4 6 8<br>VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 4. Typical Transfer Characteristic<br>1.8<br> VGS = -4.5V, ID = -2A<br>1.6<br>{ i}<br>1.4  VGS = -2.5V, ID = -2A<br>1.2<br>a Ao<br>1  VGS = -1.8V, ID = -2A<br>0.8 | T<br>0.6 A L]tt<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 6. On-Resistance Variation with Junction<br>Temperature<br>, DRAIN CURRENT (A)<br>ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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DMP2070U Document number: DS42230 Rev. 3 - 2 

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**DMP2070U** 

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0.1 1.5<br>0.09  VGS = -1.8V, ID = -2A<br>0.08 a  VGS = -2.5V, ID = -2A aaa 1.2 TELE<br>0.07<br>0.06 aes 0.9 TELE<br>Saas ==<br>0.05 ID = -1mA<br>0.04 Paar 8a 0.6 S S<br>Cee ———_<br>0.03  VGS = -4.5V, ID = -2A ID = -250μA<br>0.02 aT — | 0.3 OL SoS<br>0.01<br>0 AER FFT  EEE ELE  HH EI 0 LE ELELL<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ( ℃ )  TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 7. On-Resistance Variation with Junction  Figure 8. Gate Threshold Variation vs. Junction<br>Temperature  Temperature<br>20 1000<br>f = 1MHz<br>VGS = 0V | ——_—__—___——<br>15 Ciss<br>} SIO, TSE<br>100<br>Coss<br>10 | Geos<br>10<br>5 aAbs S S Crss EEE<br>TJ = 150 ℃ m/ TJ = 85 ℃ =———a ee ee===ee  —<br>y) TJ = 25 ℃ ee es<br>TJ = 125 ℃ TJ = -55 ℃<br>0 Z 1 PPE ELL<br>0 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10 12 14 16 18 20<br>VSD, SOURCE-DRAIN VOLTAGE (V)  VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current  Figure 10. Typical Junction Capacitance<br>10 100<br>R<br>DS(ON)<br>Limited<br>8 y, PW = 1ms  Hemet ft tt<br>PW = 100µs<br>10<br>6<br>1<br>PW = 10ms<br>4 PW = 100ms<br>VA TJ(Max) = 150 ℃ SQN!<br>VDS = -10V, ID = -2A 0.1 TC = 25 ℃<br>2 Single Pulse DUT on 1*MRP  PW = 1s<br>Board  PW = 10s<br>0 J 0.01 VGS = -4.5V  Ae TT DC ll Rll<br>0 3 6 9 12 15 18 0.1 1 10 100<br>Qg (nC)  VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. Gate Charge  Figure 12. SOA, Safe Operation Area<br>, GATE THRESHOLD VOLTAGE (V)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>GS(TH)<br>V<br>DS(ON)<br>R<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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DMP2070U Document number: DS42230 Rev. 3 - 2 

April 2021 

© Diodes Incorporated 

**DMP2070U** 

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me cORPORAT<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1 SSS SSS sss SS SSS<br>Le aaa ln henteteneentsit TS | ||| Leste TT<br>SE D=0.7 laEe| MmmT TT| fe tT<br>D=0.5<br>N S ae<br>D=0.9<br>D=0.3<br>LtMTHHHaAct L a aUTa |<br>0.1 aeeeoooae | 4 A<br>essai D=0.1  HE eger wiEEee<br>|_| ee At}<br>pesrerrrrl | | ArT<br>D=0.05<br>ite an ee<br>an RM ee Pe ph i TAPIA | ied<br>D=0.02<br>a7 C7<br>D=0.01<br>0.01 wreAl  “ls a A PAMELAaTIE TIM TTI TT ETT TT<br>AR D=0.005<br>LAIN TTT a a<br>PT UNG TT<br>|_|Ft D=Single Pulse un cee ACETTE CHHTEETHEETII Y tHcl<br>RθJA(t) = r(t) * RθJA<br>RθJA = 149.5 ℃ /W<br>Duty Cycle, D = t1 / t2<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 100000 1000000<br>t1, PULSE DURATION TIME (sec)<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


Figure 13. Transient Thermal Resistance 

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DMP2070U Document number: DS42230 Rev. 3 - 2 

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© Diodes Incorporated 

**DMP2070U** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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SOT23<br>**----- End of picture text -----**<br>


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All 7°<br>H<br>GAUGE PLANE SOT23<br>J 0.25 Dim  Min  Max  Typ<br>K1 K A  0.37  0.51  0.40<br>B  1.20  1.40  1.30<br>roar wt) a EEE C  2.30  2.50  2.40<br>A M D  0.89  1.03  0.915<br>F  0.45  0.60  0.535<br>4 L Pt L1 6B<br>G  1.78  2.05  1.83<br>H  2.80  3.00  2.90<br>1s ee SE<br>J  0.013  0.10  0.05<br>| ee K  0.890  1.00  0.975<br>C B<br>K1  0.903  1.10  1.025<br>poi SE L  0.45  0.61  0.55<br>L1  0.25  0.55  0.40<br>i= ===5 M  0.085 0.150 0.110<br>D a  0°  8°  --<br>F G All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT23** 

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Y<br>Y1 ET C<br>a) ae<br>Cod X Lod X1<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value(in mm)**|
|---|---|
|**C**|2.0|
|**X**|0.8|
|**X1**|1.35|
|**Y**|0.9|
|**Y1**|2.9|



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DMP2070U Document number: DS42230 Rev. 3 - 2 

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**DMP2070U** 

## **IMPORTANT NOTICE** 

1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 

3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 

4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document. 

5. Diodes products are provided subject to Diodes’ Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/)  or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 

6. Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 

7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 

8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. 

Copyright © 2021 Diodes Incorporated 

**www.diodes.com** 

7 of 7 **www.diodes.com** 

DMP2070U Document number: DS42230 Rev. 3 - 2 

April 2021 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMP2070U-7/power-mosfet-p-channel-20-v-46-a-0037-ohm-sot-23)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmp2070u-7/power-mosfet-20v-4-6a-sot-23-3/dp/3828421RL)
---

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