# Power MOSFET, P Channel, 20 V, 4.6 A, 0.029 ohm, SC-59, Surface Mount

![Product image](https://novapart.co/image/farnell:3943721RL/)

**URL**: https://novapart.co/products/DMP2066LSN-7/power-mosfet-p-channel-20-v-46-a-0029-ohm-sc-59
**SKU**: DMP2066LSN-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1390
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.25W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SC-59 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 4.6A |
| Drain Source On State Resistance | 0.029ohm |
| Gate Source Threshold Voltage Max | 960mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943721RL/)

**DMP2066LSN** Td **P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Features** 

- Low RDS(ON): 

   - 40 mΩ  @VGS = -4.5V 

   - 70 mΩ  @VGS = -2.5V 

- Low Input/Output Leakage 

- **Lead Free By Design/RoHS Compliant (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **"Green" Device (Note 4)** 

## **Mechanical Data** 

- Case: SC-59 

   - Case Material – Molded Plastic. UL Flammability Rating 94V-0 Moisture Sensitivity:  Level 1 per J-STD-020D 

- 

- 

- Terminals: Finish - Matte Tin Solderable per MIL-STD-202, Method 208 

- Terminal Connections: See Diagram 

- Marking Information: See Page 4 

- Ordering Information: See page 4 

- Weight: 0.014 grams (approximate) 

TOP VIEW 

**==> picture [160 x 105] intentionally omitted <==**

**----- Start of picture text -----**<br>
SC-59<br>Drain<br>D<br>Gate<br>Source G S<br>Internal Schematic Pin Configuration<br>**----- End of picture text -----**<br>


## **Maximum Ratings** @TA = 25°C unless otherwise specified 

|||||
|---|---|---|---|
|**Characteristic**|**Symbol **|**Value**|**Unit**|
|Drain-Source Voltage|VDSS|-20|V|
|Gate-Source Voltage|VGSS|±12|V|
|Drain Current (Note 1) Continuous<br>TA= 25°C<br>TA= 70°C|ID|-4.6<br>-3.7|A|
|Pulsed Drain Current(Note 2)|IDM|-18|A|
|Body-Diode Continuous Current(Note 1)|IS|2.0|A|



**Thermal Characteristics** 

**Characteristic Symbol Value Unit** Total Power Dissipation (Note 1) PD 1.25 W Thermal Resistance, Junction to Ambient (Note 1); Steady-State RθJA 100 °C/W ~~_————~~ Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 1. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t ≤10s. 2. Repetitive Rating, pulse width limited by junction temperature. 

3. No purposefully added lead. 

4. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 

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DMP2066LSN Document number: DS31467 Rev. 4 - 2 

August 2011 © Diodes Incorporated 

**DMP2066LSN** 

**Electrical Characteristics** @TA = 25°C unless otherwise specified 

|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~(QO~~|**Symbol**<br>~~(QO~~|**Min**<br>~~(QO~~|**Typ**<br>~~(QO~~|**Max **<br>~~(QO~~|**Unit**<br>~~(QO~~|**Test Condition **<br>~~(QO~~|
|**STATIC PARAMETERS**<br>~~ee~~|||||||
|Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~|-20<br>~~ee~~|⎯<br>~~ee~~|⎯<br>~~ee~~|V<br>~~ee~~|ID= -250μA,VGS= 0V<br>~~ee~~|
|Zero Gate Voltage Drain Current                       TJ= 25°C<br>~~Cf~~|IDSS<br>~~Cf~~|⎯<br>~~Cf~~|⎯<br>~~Cf~~|-1<br>~~Cf~~|μA<br>~~Cf~~|VDS= -20V,VGS= 0V<br>~~Cf~~|
|Gate-BodyLeakage Current|IGSS|⎯|⎯|±100|nA|VDS= 0V,VGS=±12V|
|Gate Threshold Voltage|VGS(th)|-0.6|-0.96|-1.2|V|VDS= VGS,ID= -250μA|
|On State Drain Current(Note 5)<br>~~TS~~|ID (ON)<br>~~TS~~|-15<br>~~TS~~|⎯<br>~~TS~~|⎯<br>~~TS~~|A<br>~~TS~~|VGS= -4.5V,VDS= -5V<br>~~TS~~|
|Static Drain-Source On-Resistance (Note 5)<br>~~TS~~|RDS (ON)<br>~~TS~~|⎯<br>~~TS~~|29<br>55<br>~~TS~~|40<br>70<br>~~TS~~|mΩ<br>~~TS~~|VGS= -4.5V, ID= -4.6A<br>VGS= -2.5V,ID= -3.8A<br>~~TS~~|
|Forward Transconductance(Note 5)|gFS|⎯|9|⎯|S|VDS= -10V,ID= -4.5A|
|Diode Forward Voltage(Note 5)|VSD<br>~~IS~~|-0.5<br>~~II~~|-0.72<br>~~ID~~|-1.4<br>~~I~~|V<br>~~OO~~|IS= -2.1A,VGS= 0V<br>~~OO~~|
|Maximum Body-Diode Continuous Current(Note 1)<br>~~nD~~|IS<br>~~nD~~<br>~~IS~~|⎯<br>~~nD~~<br>~~II~~|⎯<br>~~nD~~<br>~~ID~~|1.7<br>~~nD~~<br>~~I~~|A<br>~~nD~~<br>~~OO~~|⎯<br>~~nD~~<br>~~OO~~|
|**DYNAMIC PARAMETERS (Note 6)**<br>~~IS II~~<br>~~ID I OO OO~~<br>~~a~~<br>~~eeeeeee~~|||||||
|Input Capacitance<br>~~aes~~|Ciss<br>~~es~~|⎯<br>~~es~~<br>~~ee~~|820<br>~~es~~<br>~~ee~~|⎯<br>~~es~~<br>~~ee~~|pF<br>~~es~~<br>~~eee~~|VDS= -15V, VGS= 0V<br>f = 1.0MHz<br>~~es~~|
|Output Capacitance<br>~~aes~~|Coss<br>~~es~~|⎯<br>~~es~~<br>~~ee~~|200<br>~~es~~<br>~~ee~~|⎯<br>~~es~~<br>~~ee~~|pF<br>~~es~~<br>~~eee~~||
|Reverse Transfer Capacitance<br>~~es~~|Crss<br>~~es~~|⎯<br>~~es~~<br>~~ee~~|160<br>~~es~~<br>~~ee~~|⎯<br>~~es~~<br>~~ee~~|pF<br>~~es~~<br>~~eee~~||
|Gate Resistance<br>~~A~~|RG<br>~~A~~|⎯<br>~~ee~~<br>~~A~~|2.5<br>~~ee ~~<br>~~A~~|⎯<br> ~~ee ~~<br>~~A~~|Ω<br> ~~eee~~<br>~~A~~|VDS= 0V, VGS= 0V<br>f = 1.0MHz<br>~~A~~|
|**SWITCHING CHARACTERISTICS**|||||||
|Total Gate Charge<br>~~|~~|QG<br>~~|~~|⎯<br>~~|~~|10.1<br>~~|~~|⎯<br>~~|~~|nC<br>~~|~~<br>~~ee~~|VDS= -10V, VGS= -4.5V,<br>ID= -4.5A<br>~~|~~<br>~~ee~~|
|Gate-Source Charge|QGS|⎯|1.5|⎯|||
|Gate-Drain Charge<br>~~—————~~|QGD|⎯|4.3|⎯<br>~~ee~~|||
|Turn-On DelayTime<br>~~—————~~|td(on)|⎯|4.4|⎯<br>~~ee~~|ns<br>~~|~~<br>~~ee~~|VDS= -10V, VGS= -4.5V,<br>ID= -1A, RG= 6.0Ω<br>~~|~~<br>~~ee~~|
|Rise Time<br>~~|~~<br>~~—————~~|tr<br>~~|~~|⎯<br>~~|~~|9.9<br>~~|~~|⎯<br>~~|~~<br>~~ee~~|||
|Turn-Off DelayTime<br>~~—————~~|td(off)|⎯|28.0|⎯<br>~~ee~~|||
|Fall Time<br>~~—————~~|tf|⎯|23.4|⎯<br>~~ee~~|||



Notes: 5. Test pulse width t = 300μs. 6. Guaranteed by design.  Not subject to production testing. 

**==> picture [206 x 213] intentionally omitted <==**

**----- Start of picture text -----**<br>
30<br>| | VGS = 10V S V GS  = 4.5V | |<br>24<br>Sf VGS = 3.0V<br>18 || Yeti} tt<br>12 Piyi | | ty VGS = 2.5V<br>feo<br>6<br>Poo<br>VGS = 2.0V<br>iL<br>VGS = 1.5V<br>0 fo_..<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 1 Typical Output Characteristic<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


**==> picture [204 x 213] intentionally omitted <==**

**----- Start of picture text -----**<br>
20<br>V DS  = 5.0V eee) ae<br>16<br>12 afese<br>8<br>fe<br>Pt | | Flt<br>4 lf<br>TA = 150°C TA = 85°C<br>ae<br>T A  = 125°C TA = 25°C<br>0 ff| TA = -55°C a<br>0 0.5 1 1.5 2 2.5 3 3.5 4<br>VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 2  Typical Transfer Characteristic<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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DMP2066LSN Document number: DS31467 Rev. 4 - 2 

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**DMP2066LSN** 

**==> picture [483 x 666] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 0.08<br>VGS = 4.5V<br>SSS 0.06 Eo<br>TA = 150°C<br>CEE ere re C[<br>TA = 125°C<br>0.1 0.04 TA = 85°C<br>BERGE EREEE ee<br>V GS  = 2.5V TA = 25°C<br>==2e.===== a<br>TA = -55°C<br>—————— V GS  = 4.5V 0.02 ——_—_—_<br>—__§____ V GS  = 10V | fff]<br>0.01 LETTE 0 a<br>0 6 12 18 24 30 0 6 12 18 24 30<br>ID, DRAIN-SOURCE CURRENT (A) -ID, DRAIN CURRENT (A)<br>Fig. 3  Typical On-Resistance  Fig. 4 Typical On-Resistance<br>vs. Drain Current and Gate Voltage  vs. Drain Current and Temperature<br>1.6 2.4<br>2.0<br>1.4 Ey yy Ey ye PTE LLL<br>VGS = 10V<br>ID = 10A<br>1.6<br>1.2 Sanna TLE<br>VGS = 4.5V<br>ID = 5A 1.2 ID = 1mA<br>1.0 rT Kk<br>0.8 I D  = 250µA<br>0.8 A TLL CRS<br>0.4<br>Pt TT] = FASS<br>0.6 0<br>PL EELELL FLEE<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C)<br>Fig. 5 Normalized On-Resistance vs. Ambient Temperature Fig. 6 Gate Threshold Variation vs. Ambient Temperature<br>20 10,000<br>T A  = 25°C<br>f = 1MHz<br>eee ==<br>16<br>Se BS<br>12<br>1,000<br>es Sa<br>8 Ciss<br>ee SS<br>4 Coss<br>a Crss<br>0 FETT Eoae 100 oe e<br>0 0.2 0.4 0.6 0.8 1 1.2 0 5 10 15 20<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 7 Diode Forward Voltage vs. Current Fig. 8 Typical Total Capacitance<br>)Ω )Ω<br>, DRAIN-SOURCE ON-RESISTANCE ( ,  DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R DS(ON)<br>R<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>, GATE THRESHOLD VOLTAGE (V)<br>ON-RESISTANCE (NORMALIZED)<br>GS(TH)<br>V<br>, TOTAL CAPACITANCE (pF)<br>, SOURCE CURRENT (A) T<br>IS C<br>**----- End of picture text -----**<br>


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DMP2066LSN Document number: DS31467 Rev. 4 - 2 

August 2011 © Diodes Incorporated 

**DMP2066LSN** 

## **Ordering Information** (Note 7) 

|**Ordering Informationg Information Information** (Note 7)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMP2066LSN-7|SC-59|3000/Tape &Reel|



Notes: 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 

## **Marking Information** 

|Date CodeKey<br>**Year**<br>**Code**<br>**Month**<br>**Code**<br>~~ai~~|**2008**<br>V<br>**Jan**<br>1|**Feb**<br>2|**2009**<br>W<br>**Mar**<br>3<br>**PS4**|**2010**<br>X<br>**Apr**<br>4<br>**YM**||**2011**<br>**2012**<br>**2013**<br>Y<br>Z<br>A<br>**May**<br>**Jun**<br>**Jul**<br>**Aug**<br>**Sep**<br>5<br>6<br>7<br>8<br>9<br>PS4 = Product Type Marking Code<br>YM = Date Code Marking<br>Y = Year ex: V = 2008<br>M = Month ex: 9 = September|**2014**<br>B<br>**Oct**<br>O|**Nov**<br>N|**2015**<br>C<br>**Dec**<br>D|
|---|---|---|---|---|---|---|---|---|---|



## **Package Outline Dimensions** 

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**----- Start of picture text -----**<br>
a TOP VIEW A B C<br>eal G<br>H<br>K N M<br>Pk J ,<br>D L<br>**----- End of picture text -----**<br>


|**SC-59**|**SC-59**|**SC-59**|
|---|---|---|
|**Dim**|**Min**|**Max **|
|**A**|0.35|0.50|
|**B**|1.50|1.70|
|**C**|2.70|3.00|
|**D**|0.95||
|**G**|1.90||
|**H**|2.90|3.10|
|**J**|0.013|0.10|
|**K**<br>**L**|1.00<br>0.35|1.30<br>0.55|
|**L**|0.35|0.55|
|**M**|0.10|0.20|
|**N**|0.70|0.80|
|α|0°|8°|
|**All Dimensions in mm**|||



## **Suggested Pad Layout** 

**==> picture [149 x 89] intentionally omitted <==**

**----- Start of picture text -----**<br>
Y<br>Z “aot C<br>ae<br>X E<br>Pye<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value (in mm)**|
|---|---|
|**Z**|3.4|
|**X**|0.8|
|**Y**|1.0|
|**C**|2.4|
|**E**|1.35|



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DMP2066LSN Document number: DS31467 Rev. 4 - 2 

August 2011 © Diodes Incorporated 

**DMP2066LSN** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

A.   Life support devices or systems are devices or systems which: 

1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2011, Diodes Incorporated 

**www.diodes.com** 

5 of 5 **www.diodes.com** 

DMP2066LSN Document number: DS31467 Rev. 4 - 2 

August 2011 © Diodes Incorporated 



## Links

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- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmp2066lsn-7/mosfet-p-ch-20v-4-6a-sc-59/dp/3943721RL)
---

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