# Power MOSFET, P Channel, 20 V, 4 A, 0.041 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:3828420RL/)

**URL**: https://novapart.co/products/DMP2065UQ-7/power-mosfet-p-channel-20-v-4-a-0041-ohm-sot-23
**SKU**: DMP2065UQ-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0860
**Stock**: 50+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 1.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 4A |
| Drain Source On State Resistance | 0.041ohm |
| Gate Source Threshold Voltage Max | 900mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3828420RL/)

**DMP2065UQ** 

## **20V P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

## **Features** 

- Low On-Resistance 

|**V(BR)DSS**|**RDS(ON) max**|**Package**|**ID max**<br>**TA = +25°C**|
|---|---|---|---|
|-20V|60mΩ @ VGS= -4.5V|SOT-23|-4.0A|
||90mΩ @ VGS= -2.5V||-3.3A|



- Low Gate Threshold Voltage 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen- and Antimony-Free. “Green” Device (Note 3)** 

- **The DMP2065UQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.** 

**https://www.diodes.com/quality/product-definitions/** 

## **Description and Applications** 

This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. 

## **Mechanical Data** 

- Case: SOT23 

- Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Solderable per MIL-STD-202, Method 208 

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• Lead-Free Plating (Matte Tin Finish Annealed over Alloy 42<br>Lead-Frame).<br>• Terminal Connections: See Diagram<br>• Weight: 0.006 grams (Approximate)<br>D<br>D<br>G<br>G S<br>* | ji & S<br>Top View<br>Top View  Pin Configuration  Equivalent Circuit<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|
|---|---|---|
||||
|**Part Number**|**Case**|**Packaging**|
|DMP2065UQ-7|SOT23|3000/Tape &Reel|
|DMP2065UQ-13|SOT23|10,000/Tape &Reel|



Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

65U = Product Type Marking Code YM = Date Code Marking **65U** Y  = Year (ex: H = 2020) M = Month (ex: 9 = September) Date Code Key **Year 2020 2021 2022 2023 2024 2025 2026 Code H I J K L M** N ~~{$f} |__| ___J~~ **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code** 1 2 3 4 5 6 7 8 9 O N D ~~[| —_| —_| |__| —_ —_+—_+}~~ 

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**DMP2065UQ** 

## **Maximum Ratings** (@ TA = +25°C unless otherwise specified.) 

|**Maximum Ratingsgss** (@ TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Units**|
|Drain-Source Voltage|||VDSS|-20|V|
|Gate-Source Voltage|||VGSS|±12|V|
|Drain Current (Note 6) Vgs= -4.5V|Steady<br>State|Steady<br>TA= +25°C<br>TA= +70°C|ID|-4.0<br>-3.0|A|
|Pulsed Drain Current(Pulse width≤10µS,DutyCycle≤1%)|||IDM|-15|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)||PD|0.9|W|
|Thermal Resistance,Junction to Ambient(Note 5)|SteadyState|RθJA|138|°C/W|
|Total Power Dissipation(Note 6)||PD|1.5|W|
|Thermal Resistance,Junction to Ambient(Note 6)|SteadyState|RθJA|83|°C/W|
|Operating and Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@ TA = +25°C unless otherwise specified.) 

|**Characteristic**<br>**Symbol**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**<br>**Test Condition**|
|---|
|**OFF CHARACTERISTICS(Note 7)**|
|Drain-Source Breakdown Voltage<br>BVDSS<br>-20<br><br><br>V<br>VGS= 0V,ID= -250μA|
|Zero Gate Voltage Drain Current                TJ= +25°C<br>IDSS<br><br><br>-1.0<br>μA<br>VDS= -20V,VGS= 0V|
|Gate-Source Leakage<br>IGSS<br><br><br>±50<br>nA<br>VGS=±8V,VDS= 0V|
|**ON CHARACTERISTICS(Note 7)**|
|Gate Threshold Voltage<br>VGS(th)<br>-0.5<br>—<br>-0.9<br>V<br>VDS= VGS,ID= -250μA<br>Static Drain-Source On-Resistance<br>RDS (ON)<br>—<br>41<br>60<br>mΩ<br>VGS= -4.5V,ID= -4.2A<br>53<br>90<br>VGS= -2.5V,ID= -3.4A<br>72<br>113<br>VGS= -1.8V,ID= -2.0A<br>Diode Forward Voltage<br>VSD<br>—<br>-0.7<br>-1.1<br>V<br>VGS= 0V,IS= -1A<br>**DYNAMIC CHARACTERISTICS(Note 8)**<br>Input Capacitance<br>Ciss<br><br>808<br><br>pF<br>VDS= -15V, VGS= 0V<br>f = 1.0MHz<br>Output Capacitance<br>Coss<br><br>85<br><br>pF<br>Reverse Transfer Capacitance<br>Crss<br><br>77<br><br>pF<br>Gate Resistance<br>RG<br><br>15.2<br><br>Ω<br>VGS= 0V,VDS= 0V,f = 1.0MHz<br>Total Gate Charge<br>Qg<br><br>10.2<br><br>nC<br>VGS= -4.5V, VDS= -4V, ID= -3.5A<br>Gate-Source Charge<br>Qgs<br><br>1.3<br><br>nC<br>Gate-Drain Charge<br>Qgd<br><br>2.2<br><br>nC<br>Turn-On DelayTime<br>tD(on)<br><br>10.8<br><br>ns<br>VDS= -4V, VGS= -4.5V,<br>RL= 4Ω, RG= 6Ω, ID= -1A<br>Turn-On Rise Time<br>tr<br><br>13.7<br><br>ns<br>Turn-Off DelayTime<br>tD(off)<br><br>79.3<br><br>ns<br>Turn-Off Fall Time<br>tf<br><br>34.7<br><br>ns<br>Notes:<br>5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.<br>6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1in. square copper plate.<br>7. Short duration pulse test used to minimize self-heating effect.<br>8. Guaranteed by design. Not subject to production testing.<br> ~~a~~<br>~~—~~<br>~~—~~<br>~~——~~<br>~~——_—~~<br>~~ee~~|
|DMP2065UQ<br>2 of 7<br>October 2020|
|Document number: DS42542 Rev. 2 - 2<br>**www.diodes.com**<br>© Diodes Incorporated|



October 2020 © Diodes Incorporated 

**DMP2065UQ** 

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20 20<br>VGS = -2.5V VDS = -5.0V TA = 125°C<br>VGS = -3.0V TA = 85°C TA  = 150°C<br>VGS  = -4.5V TA = -55°C<br>15 VGS  = -8.0V 15<br>TA = 25°C<br>VGS = -2.0V<br>10 V GS  = -1.8V 10<br>fo<br>5 V GS  = -1.5V 5<br>bo<br>VGS = -1.2V<br>0 PT] 0 LT<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 1 2 3<br>VDS, DRAIN -SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristics Figure 2 Typical Transfer Characteristics<br>0.12 | 0.3<br>0.1 0.25 ID = -4.2A<br>VGS = -1.8V<br>4 | [iy<br>0.08<br>0.2<br>VGS = -2.5V ID = -3.4A<br>0.06<br>0.15<br>__ VGS  = -4.5V<br>0.04<br>| 0.1<br>0.02 | | 0.05 I D  = -2.0A<br>0 |<br>0 5 10 | ] 15 20 0<br>ID, DRAIN SOURCE CURRENT (A) fs 0 fat 1 2 3 4 5 6 7 8<br>Figure 3 Typical On-Resistance vs.  V GS, GATE-SOURCE VOLTAGE (V)<br>Drain Current and Gate Voltage  Figure 4 Typical Transfer Characteristics<br>0.080.07 VGS = -4.5V TA = 150° C 1.61.4 V GS  = -2.5V VIDGS = -4.2A = -4.5V<br>ID = -3.4A<br>0.06 T A  = 125 C° 1.2<br>0.05 TA  = 85 C° 1 V I DGS  = -2A  = -1.8V<br>0.04 T A  = 25 C° he<br>0.8 Pet| | i ll<br>0.03 T A  = -55 C° 0.6 Fit<br>Ty<br>0.02<br>0.4 eee<br>0.01<br>0.2<br>PT] ey<br>0 255: iat<br>0 5 10 15 20 0<br>Pit TTT]<br>Figure 5 Typical On-Resistance vs. ID, DRAIN CURRENT (A) -50 -25TJ, JUNCTION TEMPERATURE (0 25 50 75 100 °C)125 150<br>Drain Current and Junction Temperature  Figure 6 On-Resistance Variation with Junction Temperature<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>)Ω )Ω<br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R DS(ON)<br>R<br>)Ω<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>, DRAIN-SOURCE ON-RESISTANCE (<br>ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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## JES 

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0.12 1<br>0.9<br>0.1 VGS = -1.8V<br>= 0.8 a<br>ID = -2A<br>0.08 VGS = -2.5V 0.7 ID = -1mA<br>et ID = -3.4A 0.6 BSE I D  = -250µA<br>0.06 ag 0.5 = RS<br>Beagrie CEE CSS<br>VGS = -4.5V 0.4<br>0.04 iss ID = -4.2A EEE<br>a 0.3 EE PSS<br>0.2<br>0.02 eT] | | TOPEes<br>0.1<br>0 TTT TTT 0 HEREP| | | | | ff<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (°C) TA, JUNCTION TEMPERATURE (°C)<br>Figure 7 On-Resistance Variation with Junction Temperature Figure 8 Gate Threshold Variation vs. Junction Temperature<br>20 10000<br>f = 1MHz<br>a a GG<br>15<br>| 1000 CEE C iss EE<br>TA= 85°C<br>10<br>TA= 125°C TA= 25°C<br>TA = 150°C TA= -55°C 100 Coss<br>5 OF wee Crss<br>Uh === 2a==—<br>0 |_A| 10<br>| OPREEEERFEE<br>0 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10 12 14 16 18 20<br>V SD, SOURCE-DRAIN VOLTAGE (V) -VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9 Diode Forward Voltage vs. Current Figure 10 Typical Junction Capacitance<br>8 100<br>RDS(on)<br>Limited<br>7<br>P W  = 100µs<br>6 10<br>PW = 1ms<br>5 PW = 10ms<br>DC<br>4 A VID DS  = -3.5A = -4V 1 PW = 10s Sarr BN<br>P W  = 1s<br>3 P W  = 100ms<br>2 0.1 TJ(max)  = 150°C<br>TA  = 25°C<br>1 V GS  = 6V<br>Single Pulse<br>0 7CEEL ELE 0.01 DUT on 1 * MRP Board een eee<br>0 2 4 6 8 10 12 14 16 18 20 0.1 1 10 100<br>Q g, TOTAL GATE CHARGE (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11 Gate Charge Figure 12 SOA, Safe Operation Area<br>)<br>Ω<br>, DRAIN-SOURCE ON-RESISTANCE ( , GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>DS(on)<br>R<br>, SOURCE CURRENT (A)<br>S<br>I<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, DRAIN CURRENT (A)<br>ID<br>, GATE THRESHOLD VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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i'n<br>**----- End of picture text -----**<br>


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1 CT mm a a<br>D = 0.9<br>SSa D = 0.7 EEeg aeereTT)<br>UIE D = 0.5 ECHL OCL HT CMTO THI<br>D = 0.3 oe TT Te<br>LT LEAN FUT COATT TATE ETI ETI) TIT TE P TT<br>0.1 2| NT<br>PE D = 0.1 ae<br>[Cee ae por<br>permet | TAAamreeTE<br>Ente D = 0.05 TTT<br>[ete ee Tre FA PTE Pa<br>aaa ee eT a a<br>D = 0.02<br>ee A LLIN TMT ELIT IME<br>0.01 rere<br>ee oATN D = 0.01<br>om | ANT TP TP PP PPT PT<br>CT D = 0.005 ECCI EEE<br>LAAT a ee a ee|<br>D = Single Pulse<br>R ƟJA(t) = r(t) * RƟJA<br>R ƟJA = 107.5°C/W<br>Duty Cycle, D = t1/ t2<br>0.001 SHR |<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 100000 1000000<br>t1, PULSE DURATION TIMES (sec)<br>Figure 15  Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**==> picture [26 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
SOT23<br>**----- End of picture text -----**<br>


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All 7°<br>H<br>SOT23<br>GAUGE PLANE<br>0.25 Dim  Min  Max  Typ<br>J A  0.37  0.51  0.40<br>K1 K<br>B  1.20  1.40  1.30<br>C  2.30  2.50  2.40<br>a D  0.89  1.03  0.915<br>A M F  0.45  0.60  0.535<br>a;ne L ER, L1 ===== G  ——— 1.78  2.05  1.83<br>H  2.80  3.00  2.90<br>J  0.013  0.10  0.05<br>ee eee ——— K  0.890  1.00  0.975<br>C B K1  0.903 1.10 1.025<br>L  0.45 0.61  0.55<br>L1  0.25 0.55 0.40<br>M  0.085 0.150 0.110<br>Ts BEE<br>D a  0°  8°  --<br>All Dimensions in mm<br>F G<br>ELS ====<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT23** 

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Y<br>Y1 a C<br>a<br>bdo X X1<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value(in mm)**|
|---|---|
|**C**|2.0|
|**X**|0.8|
|**X1**|1.35|
|**Y**|0.9|
|**Y1**|2.9|



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## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2020, Diodes Incorporated 

**www.diodes.com** 

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## Links

- [View this product on Novapart](https://novapart.co/products/DMP2065UQ-7/power-mosfet-p-channel-20-v-4-a-0041-ohm-sot-23)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmp2065uq-7/power-mosfet-20v-4a-sot-23-3/dp/3828420RL)
---

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