# Power MOSFET, P Channel, 25 V, 6.7 A, 0.02 ohm, U-DFN2020, Surface Mount

![Product image](https://novapart.co/image/farnell:3680141RL/)

**URL**: https://novapart.co/products/DMP2039UFDE-7/power-mosfet-p-channel-25-v-67-a-002-ohm-u-dfn2020
**SKU**: DMP2039UFDE-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1390
**Stock**: 200+
**Lead Time**: 106 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 2W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | U-DFN2020 |
| Drain Source Voltage Vds | 25V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 6.7A |
| Drain Source On State Resistance | 0.02ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3680141RL/)

**DMP2039UFDE P-CHANNEL ENHANCEMENT MODE MOSFET** 

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## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|---|
|||||
|**BVDSS**|**RDS(ON) max**|**Package**|**ID **<br>**TA = +25°C**|
|-25V|27m@ VGS= -4.5V|U-DFN2020-6<br>(Type E)|-6.7A|
||40m@ VGS= -1.8V||-5.4A|



## **Features** 

- Low RDS(ON) – Ensures on State Losses are Minimized 

- 0.6mm Profile – Ideal for Low Profile Applications 

- PCB Footprint of 4mm[2] 

- ESD Protected Gate 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Description** 

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

- **For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at** 

   - 

   - **https://www.diodes.com/products/automotive/automotive products/.** 

- **This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/** 

## **Applications** 

- Load Switching 

- Battery Management Application 

- Power Management Functions 

## **Mechanical Data** 

- Case: U-DFN2020-6 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal Connections: See Diagram 

- Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 **e3** 

- Weight: 0.001 grams (Approximate) 

Drain U-DFN2020-6 (Type E) Pin1 Gate ESD PROTECTED Gate Protection Source Ss Bottom View SS Bottom View ~~a~~ Diode Pin-Out Equivalent Circuit **g Information  Information** (Note 4) **Part Number Case Packaging** DMP2039UFDE-7 U-DFN2020-6 (Type E) 3,000/Tape & Reel 

## **Ordering Information  Information** (Note 4) 

Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

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## **Marking Information** 

Site 1 

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P9 = Product Type Marking Code<br>P9 P9 YM = Date Code Marking<br>Y = Year (ex: H = 2020)<br>M = Month (ex: 9 = September)<br>Date Code Key<br>Year 2011  …  2020  2021  2022  2023  2024  2025  2026  2027  2028  2029<br>Code Y  …  H  I  J K  L  M  N  O P  R<br>es ee ee ee ee ee ee ee ee ee ee<br>Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>Code 1  2  3 4  5 6 7  8 9 O N  D<br>es ee es ee ee ee ee<br>Site 2<br>P9 = Product Type Marking Code<br>YWX = Date Code Marking<br>P9 O7 Y = Year (ex: 0 = 2020)<br>W = Week (ex: a = Week 27; z Represents Week 52 and 53)<br>X = Internal Code (ex: U = Monday)<br>YWX<br>YM<br>**----- End of picture text -----**<br>


Date Code Key 

**Year 2011 … 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029** ~~ee~~ **Code** 1 … 0 ~~ee~~ 1 ~~ee~~ 2 ~~ee~~ 3 ~~ee~~ 4 ~~ee~~ 5 ~~ee~~ 6 ~~ee~~ 7 ~~ee~~ 8 9 **Week 1-26 27-52 53** ~~es~~ **Code** A-Z a-z z **Internal Code Sun Mon Tue Wed Thu Fri Sat Code** T U V W X Y Z ~~es ee~~ 

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DMP2039UFDE Document number: DS35420 Rev. 6 - 2 

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**DMP2039UFDE** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|-25|V|
|Gate-Source Voltage|||VGSS|±8|V|
|Continuous Drain Current (Note 5) VGS= -4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-6.7<br>-5.3|A|
||t<5s|TA= +25°C<br>TA= +70°C|ID|-8.3<br>-6.6|A|
|Continuous Drain Current (Note 5) VGS= -1.8V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-5.4<br>-4.3|A|
||t<5s|TA= +25°C<br>TA= +70°C|ID|-6.6<br>-5.2|A|
|Pulsed Drain Current(10µs Pulse,DutyCycle = 1%)|||IDM|-60|A|
|Continuous Source-Drain Diode Current|||IS|-2.0|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation (Note 5)|TA= +25°C|PD|0.8|W|
||TA= +70°C||1.2||
|Thermal Resistance, Junction to Ambient (Note 5)|Steady State|RJA|160|°C/W|
||t<5s||104||
|Total Power Dissipation (Note 6)|TA= +25°C|PD|2.0|W|
||TA= +70°C||2.9||
|Thermal Resistance, Junction to Ambient (Note 6)|Steady State|RJA|63|°C/W|
||t<5s||42||
|Thermal Resistance,Junction to Case(Note 6)|SteadyState|RJC|10.8|°C/W|
|Operatingand Storage Temperature Range||TJ, TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7)**|||||||
|Drain-Source Breakdown Voltage|BVDSS|-25|—|—|V|VGS= 0V,ID= -250µA|
|Zero Gate Voltage Drain Current|IDSS|—|—|-1|µA|VDS= -25V,VGS= 0V|
|Gate-Source Leakage|IGSS|—|—|10|µA|VGS=8.0V,VDS= 0V|
|**ON CHARACTERISTICS(Note 7)**|||||||
|Gate Threshold Voltage|VGS(TH)|-0.4|—|-1.0|V|VDS= VGS,ID= -250µA<br>~~ES~~|
|Static Drain-Source On-Resistance<br>~~EES~~|RDS(ON)<br>~~EES~~|—<br>~~EES~~|20<br>~~EES~~|27<br>~~EES~~|mΩ<br>~~EES~~|VGS= -4.5V,ID= -6.4A<br>~~EES~~<br>~~ES~~|
|||—<br>~~EES~~|24<br>~~EES~~|34<br>~~EES~~||VGS= -2.5V,ID= -4.8A<br>~~EES~~<br>~~ES~~|
|||—<br>~~EES~~|28<br>~~EES~~|40<br>~~EES~~||VGS= -1.8V,ID= -2.5A<br>~~EES~~<br>~~ES~~|
|||—<br>~~EES~~|33<br>~~EES~~|70<br>~~EES~~||VGS= -1.5V,ID= -1.5A<br>~~EES~~<br>~~ES~~|
|Forward Transfer Admittance<br>~~EES~~||Yfs|<br>~~EES~~|—<br>~~EES~~|16<br>~~EES~~|—<br>~~EES~~|S<br>~~EES~~|VDS= -5V,ID= -4A<br>~~EES~~<br>~~ES~~|
|Diode Forward Voltage|VSD|—|-0.7|-1.0|V|VGS= 0V,IS= -1A<br>~~ES~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~a~~|||||||
|Input Capacitance<br>~~———~~|Ciss<br>~~———~~<br>~~a~~|—<br>~~———~~|2530<br>~~———~~|—<br>~~———~~|pF<br>~~———~~|VDS= -15V, VGS= 0V<br>f = 1.0MHz<br>~~———~~|
|Output Capacitance<br>~~———~~|Coss<br>~~———~~<br>~~a~~|—<br>~~———~~|203<br>~~———~~|—<br>~~———~~|pF<br>~~———~~||
|Reverse Transfer Capacitance<br>~~———~~|Crss<br>~~———~~<br>~~a~~|—<br>~~———~~|177<br>~~———~~|—<br>~~———~~|pF<br>~~———~~||
|Gate Resistance<br>~~———~~|Rg<br>~~———~~<br>~~a~~|—<br>~~———~~|9.1<br>~~———~~|—<br>~~———~~|Ω<br>~~———~~|VDS= 0V,VGS= 0V,f = 1.0MHz<br>~~———~~|
|Total Gate Charge(VGS= -4.5V)|Qg<br>~~a~~|—|28.2|—|nC|VDS= -15V, ID= -4.0A<br>~~ee~~|
|Total Gate Charge(VGS= -8V|Qg|—|48.7|—|nC||
|Gate-Source Charge|Qgs|—|3.2|—|nC||
|Gate-Drain Charge<br>~~——~~|Qgd|—|5.0|—<br>~~ee~~|nC<br>~~ee~~||
|Turn-On DelayTime<br>~~——~~|tD(ON)|—|15.1|—<br>~~ee~~|ns<br>~~ee~~|VDD= -15V, VGS= -4.5V, RG= 1Ω,<br>ID= -4.0A<br>~~ee~~|
|Turn-On Rise Time<br>~~——~~|tR|—|23.5|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off DelayTime<br>~~——~~|tD(OFF)|—|137.6|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~——~~|tF|—|80.5|—<br>~~ee~~|ns<br>~~ee~~||



- Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 

   8. Guaranteed by design. Not subject to production testing. 

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20 20<br>VVGSGS = -8.0V = 8.0V<br>0 | VV G SS = -4.5V = 4.5V VDS = -5.0V !<br>16 VVGSGS = -2.5V = 2.5V<br>15<br>Foe Tip<br>VVGSGS = -2.0V = 2.0V VVGSGS = -1.5V = 1.5V<br>12<br>VVGSGS = -1.8V = 1.8V<br>10<br>|<br>8<br>|<br>4 _2s—fOCCeeeere VVGSGS = -1= 1 .2V 5 a TA = 125TA = 150C C { TAT = 25A = 85 ae CC<br>TA = -55C<br>0 VeeseSSeeeee 0 > SD  2<br>0 1 2 3 4 5 0 0.5 1.0 1.5 2.0 2.5 3.0<br>-VDS, DRAIN -SOURCE VOLTAGE(V) -VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 1 Typical Output Characteristics Fig. 2  Typical Transfer Characteristics<br>0.06 0.04<br>0.05 SERRE VGS = -4.5V<br>0.03 TA = 150  C<br>0.04 COOP Ee TA = 125C<br>TA = 85C<br>0.03 CCEer 0.02 TA = 25C<br>TA = -55C<br>0.02 i<br>0.01<br>0.01<br>Tye ee<br>0 TEE 0<br>1 2 3 4 5 6 7 8 yy 9 10 0 4 8 12 16 20<br>-ID, DRAIN SOURCE CURRENT (A)  -ID, DRAIN SOURCE CURRENT (A)<br>Fig. 3  Typical On-Resistance vs.  Fig. 4  Typical On-Resistance vs.<br>Drain Current and Gate Voltage  Drain Current and Temperature<br>1.7 0.06<br>1.5 0.05<br>p= -5 A<br>coe,Z<br>1.3 0.04<br>VGS  -2.= 5V<br>ID  -5= A<br>1.1 0.03<br>0.9 aoe aes 0.02 tt VGS = -4.5V<br>ID  -10= A<br>0.7 oT] 0.01 PTT<br>0.5 0<br>-50 TUTTE -25 0 25 50 75 yy 100 125 150 -50 TUTE -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)<br>Fig. 5  On-Resistance Variation with Temperature Fig. 6  On-Resistance Variation with Temperature<br> , DRAIN-SOURCE<br>DS(ON<br>R<br>ON-RESISTANCE (NORMALIZED)  , DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>DS(ON)<br>)<br>,DRAIN-SOURCE ON-RESISTANCE(<br>R<br>, DRAIN CURRENT (A)<br>-I<br>D<br>DS(ON )<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (Normalized)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE(<br>DS(ON)<br>R<br>, DRAIN CURRENT (A)<br>D<br>-I<br>DS(on)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>**----- End of picture text -----**<br>


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1.4 20<br>18<br>1.2<br>16<br>1.0 14<br>12<br>0.8 —_<br>CAP See<br>10<br>0.6 SS<br>== 8 a ee<br>0.4 [meth 6 fe<br>4<br>0.2<br>TTT TTS 2 a<br>0 0 __ |<br>-50 PEEP -25 0 25 50 75 EET 100 125 150 0.4 a 0.6 0.8 1.0 1.2<br>TA, AMBIENT TEMPERATURE  ( °C癈 ) -VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current<br>1,000 \——— f = 1MHz 100,000 _—eeee ee ee ee<br>10,000<br>Ciss TTAA = 150°C  = 150癈TAA = 150°C  = 150癈AA = 150°C  = 150癈A = 150°C  = 150癈 = 150°C  = 150癈 = 150癈癈<br>100 —_ oe SSS==<br>1,000 SS TTT AAA  = 125= 125°癈C = 125°癈C  125°癈C °癈C 癈C C<br>—— rr rr ee<br>100 TTAA = 85= 85°癈C TAA = 85= 85°癈C AA = 85= 85°癈C A = 85= 85°癈C  = 85= 85°癈C = 85°癈C  85°癈C °癈C 癈C C<br>o __|___—ss.| C oss |Sd a———<br>—— a eeee eeeeee<br>Crss 10<br>TTAA = 25= 25°癈C TAA = 25= 25°癈C AA = 25= 25°癈C A = 25= 25°癈C  = 25= 25°癈C = 25°癈C  25°癈C °癈C 癈C C<br>Po ——_—————<br>1<br>1 0 ee 5 ee 10 ee 15 20 0 PoEFEF 5 10 15 20 25<br>-VDS, DRAIN-SOURCE VOLTAGE (V) -VDS, DRAIN-SOURCE VOLTAGE(V)DS, DRAIN-SOURCE VOLTAGE(V), DRAIN-SOURCE VOLTAGE(V)<br>Fig. 9 Typical Junction Capacitance Fig. 10 Typical Drain-Source Leakage Current vs. Voltage<br>8 100<br>RRR DS DS(on) (ON)ON)) PW = 10µsW = 10µs = 10µsµss<br>LimLimLim ited<br>10 a<br>6 ny, FERS tt<br>— DC OPS IS<br>1 PWW = 10s 10s<br>PW = 1sW = 1s = 1s<br>4 7 a P W  = 100msPP W  = 10ms ASeeee<br>0.1 PWW = 1ms 1ms<br>See<br>Re PPW W= 100μs = 100祍PW W= 100μs = 100祍W W= 100μs = 100祍W= 100μs = 100祍= 100μs = 100祍 = 100祍祍<br>es<br>2 / ee eet<br>0.01<br>/ |TynaRec=TynaRec=Rec=150°C| SSS HSE| SSS HSE SSS HSE HSE 150°C| SSS HSE| SSS HSE SSS HSE HSE ae<br>Single Pulse Tf<br>0 0.001 1<br>0 5 10 15 20 25 30 35 40 45 50 0.1 1 10<br>Qg, TOTAL GATE CHARGE (nC) -VDS, DRAIN-SOURCE VOLTAGE (V)DS, DRAIN-SOURCE VOLTAGE (V), DRAIN-SOURCE VOLTAGE (V)<br>Fig. 11 Gate-Charge Characteristics Fig. 12 SOA, Safe Operation Area<br> (V)<br>G<br>, GATE THRESHOLD VOLT<br>GS(TH)<br>-<br>, SOURCE CURRENT (A)<br>S<br>-I<br>(V)<br>E<br>G<br>A<br>, GATE THRESHOLD VOLT<br>V<br>GS(TH)<br>, GATE-SOURCE VOLTAGE (V)<br>-V<br>GS<br>T<br>, JUNCTION CAPACITANCE (pF)<br>C<br>DSS<br>, LEAKAGE CURRENT (nA)<br>-I<br>D<br>, DRAIN CURRENT (A)<br>-I<br>**----- End of picture text -----**<br>


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100,000 _—eeee ee ee ee<br>10,000<br>TTAA = 150°C  = 150癈TAA = 150°C  = 150癈AA = 150°C  = 150癈A = 150°C  = 150癈 = 150°C  = 150癈 = 150癈癈<br>SSS==<br>1,000 SS TTT AAA  = 125= 125°癈C = 125°癈C  125°癈C °癈C 癈C C<br>rr rr ee<br>100 TTAA = 85= 85°癈C TAA = 85= 85°癈C AA = 85= 85°癈C A = 85= 85°癈C  = 85= 85°癈C = 85°癈C  85°癈C °癈C 癈C C<br>———a———<br>a eeee eeeeee<br>10<br>TTAA = 25= 25°癈C TAA = 25= 25°癈C AA = 25= 25°癈C A = 25= 25°癈C  = 25= 25°癈C = 25°癈C  25°癈C °癈C 癈C C<br>——_—————<br>1<br>0 PoEFEF 5 10 15 20 25<br>-VDS, DRAIN-SOURCE VOLTAGE(V)DS, DRAIN-SOURCE VOLTAGE(V), DRAIN-SOURCE VOLTAGE(V)<br>Fig. 10 Typical Drain-Source Leakage Current vs. Voltage<br>DSS<br>, LEAKAGE CURRENT (nA)<br>-I<br>**----- End of picture text -----**<br>


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100<br>RRR DS DS(on) (ON)ON)) PW = 10µsW = 10µs = 10µsµss<br>LimLimLim ited<br>10 a<br>FERS tt<br>— DC OPS IS<br>1 PWW = 10s 10s<br>PW = 1sW = 1s = 1s<br>a P W  = 100msPP W  = 10ms ASeeee<br>0.1 PWW = 1ms 1ms<br>See<br>Re PPW W= 100μs = 100祍PW W= 100μs = 100祍W W= 100μs = 100祍W= 100μs = 100祍= 100μs = 100祍 = 100祍祍<br>es<br>ee eet<br>0.01<br>=<br>|TynaRec=TynaRec=Rec=150°C| SSS HSE| SSS HSE SSS HSE HSE ae<br>Single Pulse Tf<br>0.001 1<br>0.1 1 10 100<br>-VDS, DRAIN-SOURCE VOLTAGE (V)DS, DRAIN-SOURCE VOLTAGE (V), DRAIN-SOURCE VOLTAGE (V)<br>Fig. 12 SOA, Safe Operation Area<br>D<br>, DRAIN CURRENT (A)<br>-I<br>**----- End of picture text -----**<br>


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DMP2039UFDE Document number: DS35420 Rev. 6 - 2 

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**DMP2039UFDE** 

**==> picture [396 x 212] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 rr<br>tere D = 0.7 el<br>aCT D = 0.5 oper en th<br>TT D = 0.3<br>eT ae a<br>ma i<br>0.1 PFE D = 0.1 EE D = 0.9<br>TA<br>D = 0.05<br>eeeVk TT ara<br>f pe PTR Ppa Ppl<br>D = 0.02<br>ee HK HHI HHI HHH<br>II eT<br>0.01 D = 0.01<br>eerie 0 cee 007 |cL| ATIVE TTI<br>PeerTZ<br>oo D = 0.005 A RRθJAJA (t) =  r(t)  r(t)  **  R RθJAJA TT Tt<br>PR0 2aea RR θJA JA  = 64= 64癈℃/W/W  COTna<br>Duty Cycle, D = t1/ t2 Duty Cycle, D = t1 / t2<br>Single Pulse<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIMES (sec)<br>t1, PULSE DURATION TIME (sec)<br>Fig. 13  Transient Thermal Resistance<br>Fig. 13 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


6 of 8 **www.diodes.com** 

DMP2039UFDE Document number: DS35420 Rev. 6 - 2 

February 2020 © Diodes Incorporated 

**DMP2039UFDE** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**U-DFN2020-6 (Type E)** 

**==> picture [157 x 154] intentionally omitted <==**

**----- Start of picture text -----**<br>
A3<br>A1<br>A<br>D<br>b1 K1<br>D2<br>E E2 L 1<br>L(2X)<br>K2<br>Z(4X) e b(6X)<br>**----- End of picture text -----**<br>


|**U-DFN2020-6**<br>**Type E**|**U-DFN2020-6**<br>**Type E**|**U-DFN2020-6**<br>**Type E**|**U-DFN2020-6**<br>**Type E**|
|---|---|---|---|
|**Dim**|**Min**|**Max**|**Typ**|
|**A**|0.57|0.63|0.60|
|**A1**|05<br>0|063<br>0.05|060<br>0.03|
|**A3**|||0.15|
|**b**|0.25|0.35|0.30|
|**b1**<br>**D**|0.185<br>1.95|0.285<br>2.05|0.235<br>2.00|
|**D**<br>**D2**|1.95<br>0.85|2.05<br>1.05|2.00<br>0.95|
|**E**|1.95|2.05|2.00|
|**E2**|1.40|1.60|1.50|
|**e**|||0.65|
|**L**|0.25|0.35|0.30|
|**L1**|05<br>0.82|035<br>0.92|030<br>0.87|
|**L1**<br>**K1**|0.82<br>|0.92<br>|0.87<br>0.305|
|**K2**|||0.225|
|**Z**<br>~~PE~~|||0.20|
|**All Dimensions in mm**<br>~~PE~~||||



## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**U-DFN2020-6 (Type E)** 

**==> picture [180 x 138] intentionally omitted <==**

**----- Start of picture text -----**<br>
PR X2<br>Y3 Y2 Y1<br>4<br>X1<br>X(6x) C Y (2x)<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value**<br>**(in mm)**|
|---|---|
|**C**|0.650|
|**X**|0.400|
|**X1**|0.285|
|**X2**|1.050|
|**Y**|0.500|
|**Y1**|0.920|
|**Y2**|1.600|
|**Y3**|2.300|



7 of 8 **www.diodes.com** 

DMP2039UFDE Document number: DS35420 Rev. 6 - 2 

February 2020 © Diodes Incorporated 

**DMP2039UFDE** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2020, Diodes Incorporated 

**www.diodes.com** 

8 of 8 **www.diodes.com** 

DMP2039UFDE Document number: DS35420 Rev. 6 - 2 

February 2020 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMP2039UFDE-7/power-mosfet-p-channel-25-v-67-a-002-ohm-u-dfn2020)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmp2039ufde-7/mosfet-p-ch-25v-6-7a-u-dfn2020/dp/3680141RL)
---

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