# Power MOSFET, P Channel, 20 V, 6 A, 0.023 ohm, TSOT-26, Surface Mount

![Product image](https://novapart.co/image/farnell:3943714/)

**URL**: https://novapart.co/products/DMP2035UVTQ-7/power-mosfet-p-channel-20-v-6-a-0023-ohm-tsot-26
**SKU**: DMP2035UVTQ-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1170
**Stock**: 50+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 1.2W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | TSOT-26 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 6A |
| Drain Source On State Resistance | 0.023ohm |
| Gate Source Threshold Voltage Max | 700mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943714/)

**DMP2035UVTQ 20V P-CHANNEL ENHANCEMENT MODE MOSFET** ~~TT~~ 

**Features and Benefits** 

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Product Summary<br>**----- End of picture text -----**<br>


**V(BR)DSS RDS(on) max TA = +25°C ID**  Low  Input Capacitance Low On-Resistance -20V 35mΩ @ VGS = -4.5V -6.0A  Fast Switching Speed ~~[t~~ 45mΩ @ VGS = -2.5V -5.2A  ESD protected Up To 3KV ~~e~~ 

## **Description** 

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **PPAP Capable (Note 4)** 

## **Mechanical Data** 

## **Applications** 

- DC-DC Converters 

- Motor Control 

- Power management functions 

- Analog Switch 

- Case: TSOT26 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal Connections: See Diagram 

- Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

- Weight: 0.013 grams (Approximate) 

ESD PROTECTED TO 3kV 

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Drain<br>TSOT26<br>D 1 6 D<br>Gate<br>D 2 5 D<br>G 3 4 S    Gate<br>   Protection Source<br>   Diode<br>Top View<br>Top View  Pin-Out  Equivalent Circuit<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 5) 

|**Ordering Informationg Information Information** (Note 5)|**Ordering Informationg Information Information** (Note 5)|**Ordering Informationg Information Information** (Note 5)|
|---|---|---|
||||
|**Part Number**|**Case**|**Packaging**|
|DMP2035UVTQ-7|TSOT26|3,000/Tape & Reel|
|DMP2035UVTQ-13|TSOT26|10,000/Tape &Reel|



Notes: 

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. Automotive products are AEC-Q10x qualified and are PPAP capable. Automotive, AEC-Q10x and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/. 

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

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20P = Product Type Marking Code<br>YM = Date Code Marking<br>20P<br>Y = Year (ex: Y = 2011)<br>M = Month (ex: 9 = September)<br>Date Code Key<br>Year 2011 2012 2013 2014 2015 2016 2017<br>Code Y  Z  A  B  C  D  E<br>a<br>Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>ee Code 1  2  3 4  5 6 7  8 9 O N  D<br>DMP2035UVTQ 1 of 6  September 2017<br>Document number: DS37400 Rev. 2 - 2 www.diodes.com   © Diodes Incorporated<br>YM<br>**----- End of picture text -----**<br>


**DMP2035UVTQ** 

## **Maximum Ratings** @TA = 25°C unless otherwise specified 

|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Units**|
|Drain-Source Voltage|||VDSS|-20|V|
|Gate-Source Voltage|||VGSS|±12|V|
|Continuous Drain Current (Note 7) VGS= -4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-6.0<br>-4.8|A|
||t<10s|TA= +25°C<br>TA= +70°C|ID|-7.2<br>-5.7|A|
|Continuous Drain Current (Note 7) VGS= -2.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-5.2<br>-4.1|A|
||t<10s|TA= +25°C<br>TA= +70°C|ID|-6.2<br>-4.9|A|
|Maximum Continuous BodyDiode Forward Current(Note 7)|||IS|-2.0|A|
|Pulsed Drain Current(10µspulse,dutycycle = 1%)|||IDM|-24|A|



## **Thermal Characteristics** @TA = 25°C unless otherwise specified 

|**Thermal Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Thermal Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Thermal Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Thermal Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Thermal Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Units**|
|Total Power Dissipation(Note 6)||PD|1.2|W|
|Thermal Resistance, Junction to Ambient (Note 6)|SteadyState|RθJA|106|°C/W|
||t<10s||74||
|Total Power Dissipation(Note 7)||PD|2.0|W|
|Thermal Resistance, Junction to Ambient (Note 7)|SteadyState|RθJA|65|°C/W|
||t<10s||46||
|Thermal Resistance,Junction to Case(Note 7)|SteadyState|RθJC|11.8||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to 150|°C|



## **Electrical Characteristics** @TA = 25°C unless otherwise specified 

|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|---|---|---|---|---|
||||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**||**Test Condition**||
|**OFF CHARACTERISTICS(Note 8)**<br>~~———~~|||||||||
|Drain-Source Breakdown Voltage<br>~~———~~|BVDSS<br>|-20<br>|<br>|<br>||V<br>||VGS= 0V,ID= -250µA<br>|
|Zero Gate Voltage Drain Current<br>~~———~~|IDSS<br>|<br>|<br>|-1<br>||µA<br>||VDS= -20V,VGS= 0V<br>|
|Gate-Source Leakage<br>~~———~~|IGSS<br>|<br>|<br>|10<br>||µA<br>||VGS=8V,VDS= 0V<br>|
|**ON CHARACTERISTICS(Note 8)**<br>~~———~~|||||||||
|Gate Threshold Voltage<br>|VGS(th)<br>|-0.4<br>|-0.7<br>|-1.5<br>||V<br>||VDS= VGS,ID= -250µA<br>|
|Gate Threshold Voltage Temperature Coefficient<br>|△VGS(th)/△TJ<br><br>~~SSS~~|<br><br>~~SSS~~|2.5<br><br>~~SSS~~|<br><br>~~SSS~~||mV/°C<br><br>~~EEE~~||ID= -250µA , Referenced to<br>+25°C<br><br>~~EEE~~|
|Static Drain-Source On-Resistance<br>~~a~~|RDS(ON)<br>~~a~~<br>~~SSS~~|<br>~~a~~<br>~~SSS~~|23<br>~~a~~<br>~~SSS~~|35<br>~~a~~<br>~~SSS~~||mΩ<br>~~a~~<br>~~EEE~~||VGS= -4.5V,ID= -4.0A<br>~~a~~<br>~~EEE~~|
|||<br>~~a~~<br>~~SSS~~|30<br>~~a~~<br>~~SSS~~|45<br>~~a~~<br>~~SSS~~||||VGS= -2.5V,ID= -4.0A<br>~~a~~<br>~~EEE~~|
|||<br>~~a~~<br>~~SSS~~|41<br>~~a~~<br>~~SSS~~|62<br>~~a~~<br>~~SSS~~||||VGS= -1.8V,ID= -2.0A<br>~~a~~<br>~~EEE~~|
|Forward Transfer Admittance<br>~~a~~||Yfs|<br>~~a~~<br>~~SSS~~|<br>~~a~~<br>~~SSS~~|18<br>~~a~~<br>~~SSS~~|<br>~~a~~<br>~~SSS~~||S<br>~~a~~<br>~~EEE~~||VDS= -5V,ID= -5.5A<br>~~a~~<br>~~EEE~~|
|Diode Forward Voltage(Note 7)|VSD<br>~~SSS~~|<br>~~SSS~~|-0.7<br>~~SSS~~|-1.0<br>~~SSS ~~||V<br> ~~EEE~~||VGS= 0V,IS= -1A<br>~~EEE~~|
|**DYNAMIC CHARACTERISTICS(Note 9)**|||||||||
|Input Capacitance<br>~~———~~|Ciss<br>~~———~~|<br>~~———~~|1610<br>~~———~~|2400<br>~~———~~||pF<br>~~———~~||VDS= -10V, VGS= 0V<br>f = 1.0MHz<br>~~———~~|
|Output Capacitance<br>~~———~~|Coss<br>~~———~~|<br>~~———~~|157<br>~~———~~|210<br>~~———~~|||||
|Reverse Transfer Capacitance<br>~~———~~|Crss<br>~~———~~|<br>~~———~~|145<br>~~———~~|200<br>~~———~~|||||
|Gate Resistance<br>~~———~~|RG<br>~~———~~|<br>~~———~~|9.4<br>~~———~~|14.1<br>~~———~~||Ω<br>~~———~~||VDS= 0V,VGS= 0V,f = 1.0MHz<br>~~———~~|
|Total Gate Charge|Qg||15.4|23.1||nC||VDS= -10V, VGS= -4.5V<br>ID= -4A|
|Gate-Source Charge|Qgs||2.5||||||
|Gate-Drain Charge|Qgd||3.3||||||
|Turn-On DelayTime|tD(on)||17|33||ns||VGS= -4.5V, VDS= -10V, RG= 6Ω,<br>ID= -1A, RL= 10Ω|
|Turn-On Rise Time|tr||12|19|||||
|Turn-Off DelayTime|tD(off)||94|150|||||
|Turn-Off Fall Time|tf||42|64|||||
|Reverse  RecoveryTime|trr||14|25||ns||IF=-4.5A, di/dt=100A/µS|
|Reverse  RecoveryCharge|Qrr||4|8||nC|||



- Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 

   7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 

   8. Short duration pulse test used to minimize self-heating effect. 

   9. Guaranteed by design. Not subject to product testing. 

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**DMP2035UVTQ** 

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25 20<br>VGS = 8.0V<br>VGS = 4.5V VDS = -5.0V<br>20<br>VGS = 3.5V 15<br>FSp VGS = 2.0V ee oe<br>15 VGS = 3.2V<br>VGS = 3.0V 10<br>VGS = 2.5V<br>10 Rott =  LOE<br>Fo 5 TTT T A = 150C<br>5 V GS = 1.5V TA = 125C TA = 85C<br>TA = 25C<br>TA = -55C<br>0 |VELLAPAAREBEE 0 ayF<br>0 1 2 3 4 5 0 0.5 1.0 1.5 2.0 2.5 | 3.0<br>-VDS, DRAIN -SOURCE VOLTAGE(V) -VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 1 Typical Output Characteristics Fig. 2  Typical Transfer Characteristics<br>0.07 0.05<br>VGS = -4.5V<br>0.06 0.04 T A = 150C<br>0.05 my eee TA = 125C<br>TA = 85C<br>0.03<br>0.04 0 TA = 25C<br>0.03 PL TET - 0.02 P| yt TA = -55C<br>al<br>0.02 SMM 0.01<br>0.1 1 10 100 0 4 8 12 16 20<br>-ID, DRAIN SOURCE CURRENT -ID, DRAIN SOURCE CURRENT (A)<br>Fig. 3  Typical On-Resistance vs.  Fig. 4  Typical On-Resistance vs.<br>Drain Current and Gate Voltage  Drain Current and Temperature<br>1.7 0.06<br>1.5<br>0.05<br>1.3 Se TITTLE VGS  -2.= 5V<br>SERRE 0.04 cee I D = -5A<br>1.1<br>0.03<br>0.9 Ye te VIDGS  -10= = -4.5VA<br>0.02<br>0.7 ATI) eeTH<br>0.5 PEPE) 0.01 OLE<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)<br>Fig. 5  On-Resistance Variation with Temperature Fig. 6  On-Resistance Variation with Temperature<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(on)<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE(<br>DS(ON)<br>R<br>, DRAIN CURRENT (A)<br>-I<br>D<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (Normalized)<br>)<br>,DRAIN-SOURCE ON-RESISTANCE(<br>R<br>DS(ON)<br>D<br>, DRAIN CURRENT (A)<br>-I<br>**----- End of picture text -----**<br>


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© Diodes Incorporated 

**DMP2035UVTQ** 

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1.2 20<br>18<br>1.0 ToT =e<br>16<br>14<br>0.8<br>12<br>| EEE<br>0.6 10<br>8<br>0.4 SS<br>SS 6 ees<br>4<br>0.2<br>SS 2 RS<br>0 0<br>PL ELEL Lu yy<br>-50 -25 0 25 50 75 100 125 150 0 0.3 0.6 0.9 1.2 1.5<br>TA, AMBIENT TEMPERATURE (°C) -VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current<br>10,000 100,000<br>T A  = 150°C<br>T A  = 150°C<br>1,000 T A  = 125°C 10,000 TA = 125°C<br>1,000<br>100 TA = 85°C TA = 85°C<br>100 TA = 25°C<br>T A  = -55°C<br>10<br>Soeee8s= 10<br>TA = -55°C<br>TA = 25 ° C<br>1 1<br>2 4 6 8 10 12 14 16 18 20 2 4 6 8 10<br>-VDS, DRAIN-SOURCE VOLTAGE(V) -VGS, GATE-SOURCE VOLTAGE(V)<br>Fig. 9 Typical Drain-Source Leakage Current vs. Voltage Fig. 10 Typical Gate-Source Leakage Current vs. Voltage<br>10,000 10<br>f = 1MHz<br>SSS CLL<br>8<br>Ciss 6<br>1,000<br>SEaeeneeae HE<br>4<br>2<br>SS C oss OTCHHL<br>Crss<br>100 ress 0<br>0 2 4 6 8 10 12 14 16 18 20 0 4 8 12 16 20 24 28 32 36 40<br>-VDS, DRAIN-SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)<br>Fig. 11 Typical Junction Capacitance Fig. 12 Gate-Charge Characteristics<br>, LEAKAGE CURRENT (nA)<br>-I<br>GSS<br>GS<br>, GATE-SOURCE VOLTAGE (V)<br>-V<br>, SOURCE CURRENT (A)<br>S<br>-I<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, GATE THRESHOLD VOLTAGE(V)<br>V<br>GS(TH)<br>, LEAKAGE CURRENT (nA)<br>DSS<br>-I<br>**----- End of picture text -----**<br>


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DMP2035UVTQ Document number: DS37400 Rev. 2 - 2 

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**DMP2035UVTQ** ~~[~~ 

## reeves 

**==> picture [396 x 208] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>D = 0.7<br>be D = 0.5 EH Er<br>D = 0.3 NN ET Eee ee ee ee eal<br>ag i<br>0.1 PUT D = 0.1 CUT eAVe D = 0.9 CCITTTTT<br>tt te ET<br>D = 0.05<br>bo Te CIEE<br>EE a<br>PC AAT ETI PAI EI Tn<br>D = 0.02<br>0.01 PT2LUTTE|EET ETN ETT TTI LUT<br>D = 0.01<br>D = 0.005 RJA(t) = r(t)  *  RJA<br>TICPETT R JA  = 88°C/W Taml<br>Duty Cycle, D = t1/ t2<br>Single Pulse<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIMES (sec)<br>Fig. 13  Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**==> picture [467 x 187] intentionally omitted <==**

**----- Start of picture text -----**<br>
D<br>e1 0 1(4x)<br>E1/2 4 om | TSS Dim  Min TSOT26 Max  Typ<br>i t ) t d E/2 SE A   1.00  <br>A1  0.010  = 0.100  Ey <br>A2  0.840  0.900  <br>E1 E c D  2.800 3.000 2.900<br>Gauge Plane<br>E  2.800 BSC<br>L} — —__}_‘| 0 - Seating Plane PF es E1  e{|ee 1.500 ee 1.7 ee 00 1.600<br>TT LO OL L ee b  ff 0.300  0.450  <br>L2 c 0.120  0.200  <br>Tm | oo ee<br>e 0.950 BSC<br>e tL b 0 ; 1(4x) ee<br>e1  1.900 BSC<br>es<br>A2 L  0.30  0.50  <br>es<br>A1 a L2  0.250 BSC<br>A θ  0°  8°  4°<br>ee θ1  4°  12°  <br>i Seating Plane ee-ts~—“—SSY All Dimensions in mm  es<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**==> picture [109 x 121] intentionally omitted <==**

**----- Start of picture text -----**<br>
_—~ C |<br>Y1 i _<br>,<br>_<br>Y<br>X<br>‘a | i]<br>**----- End of picture text -----**<br>


|**Dimensions Value**|**Dimensions Value**|**Dimensions Value(in mm)**|
|---|---|---|
|**C**||0.950|
|**X**||0.700|
|**Y**||1.000|
|**Y1**||3.199|



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**DMP2035UVTQ** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

A.   Life support devices or systems are devices or systems which: 

1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2017, Diodes Incorporated 

**www.diodes.com** 

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## Links

- [View this product on Novapart](https://novapart.co/products/DMP2035UVTQ-7/power-mosfet-p-channel-20-v-6-a-0023-ohm-tsot-26)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmp2035uvtq-7/mosfet-p-ch-20v-6a-tsot-26/dp/3943714)
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