# Power MOSFET, Enhancement Mode, P Channel, 20 V, 3.6 A, 0.035 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:2061419/)

**URL**: https://novapart.co/products/DMP2035U/power-mosfet-enhancement-mode-p-channel-20-v-36-a
**SKU**: DMP2035U
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0880
**Stock**: 500+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-3.6A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.023ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 810mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 3.6A |
| Drain Source On State Resistance | 0.035ohm |
| Gate Source Threshold Voltage Max | 700mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2061419/)

**DMP2035U** 7 **P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Features** 

## **Mechanical Data** 

- Low On-Resistance 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- ESD Protected Up To 3KV 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- Case: SOT23 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish  Matte Tin Annealed over Copper Leadframe.  Solderable per MIL-STD-202, Method 208 

- Terminal Connections: See Diagram Below 

- Weight: 0.009 grams (Approximate) 

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D rain<br>**----- End of picture text -----**<br>


|||D rain|D rain|D rain|D rain|D rain|D rain|D rain|D rain|D rain|D rain|D rain|D rain||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|SOT23<br>ESD PROTECTED TO 3kV<br>ae||D<br>G<br>S<br>S o urce<br>G ate<br>P ro tection<br>D iode<br>G ate<br> ~~ey~~|||||||||||||
||Top View|Internal Schematic|||||||Top View||Top View||||
|**Ordering Information** (Note 4)|||||||||||||||
||||||||||||||||
|**Part Number**|**Compliance**||**Case**||||||||**Packaging**||||
|DMP2035U-7|Standard||SOT23||||||3,000 / 7” Ta||000 / 7” Tape & Reel||||
|DMP2035UQ-7|Automotive||SOT23||||||3,000 / 7” Ta||000 / 7” Tape & Reel||||
|DMP2035U-13|Standard||SOT23||||||10,000 / 13” Ta||000 / 13” Ta||000 / 13” Tape & Reel||



## **Ordering Information** (Note 4) 

- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

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MP3 = Product Type Marking Code<br>MP3 YM = Date Code Marking<br>Y or Y = Year (ex: D = 2016)<br>M = Month (ex: 9 = September)<br>Date Code Key<br>Year 2009 ~ 2016 2017 2018 2019 2020 2021  2022<br>ee Code W  ~  D  E  ee F  G  H  I  J<br>Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>ee Code 1  2  3 4  5 6 7  8 9 O N  D<br>YM<br>**----- End of picture text -----**<br>


1 of 6 **www.diodes.com** 

DMP2035U Document number: DS31830 Rev. 6 - 2 

January 2016 © Diodes Incorporated 

**DMP2035U** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

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||||||
|---|---|---|---|---|
|Characteristic|Symbol|Value|Unit|
|Drain-Source Voltage|VDSS|-20|V|
|Gate-Source Voltage|VGSS|±|8|V|
|Steady|TA|= +25°C|-3.6|
|Continuous Drain Current (Note 5)|ID|A|
|State|TA|= +70°C|-2.9|
|Pulsed Drain Current (Note 6)|IDM|-24|A|

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## **Thermal Characteristics** 

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||||||
|---|---|---|---|---|
|Characteristic|Symbol|Value|Unit|
|Power Dissipation (Note 5)|PD|0.81|W|
|Thermal Resistance, Junction to Ambient @TA|= +25°C|RθJA|153.5|°C/W|
|Operating and Storage Temperature Range|TJ,|TSTG|-55 to +150|°C|

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**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

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||||||||||
|---|---|---|---|---|---|---|---|---|
|GG|Characteristic|Symbol|Min|Typ|Max|CO|Unit|Test Condition|
|OFF CHARACTERISTICS (Note 7)|
|a|Drain-Source Breakdown Voltage|BVDSS|-20|—|—|V|VGS = 0V, ID = -250μA|
|Zero Gate Voltage Drain Current TJ = +25°C|IDSS|—|—|-1.0|μA|VDS = -20V, VGS = 0V|
|eee|Gate-Source Leakage|IGSS|—|—|±10|μA|VGS = ±8V, VDS = 0V|
|ON CHARACTERISTICS (Note 7)|
|pf|Gate Threshold Voltage|VGS(th)|-0.4|-0.7|-1.0|V|VDS = VGS, ID = -250μA|
|23|35|VGS = -4.5V, ID = -4.0A|
|Static Drain-Source On-Resistance|RDS(ON)|—|30|45|mΩ|VGS = -2.5V, ID = -4.0A|
|41|62|
|ee|VGS = -1.8V, ID = -2.0A|
|Forward Transfer Admittance||Yfs||—|14|—|S|VDS = -5V, ID = -4A|
|Diode Forward Voltage|VSD|—|-0.7|-1.0|V|VGS = 0V, IS = -1A|
|pe|DYNAMIC CHARACTERISTICS (Note 8)|
|GG|Input Capacitance|Ciss|—|1,610|—|pF|
|Output Capacitance|Coss|—|157|—|pF|VDS = -10V, VGS = 0V|
|f = 1.0MHz|
|Reverse Transfer Capacitance|Crss|—|145|—|pF|
|i|Gate Resistance|Oe|Rg|—|9.45|—|Ω|VDS = 0V, VGS = 0V, f = 1MHz|
|GG|Total Gate Charge|Qg|—|15.4|—|nC|
|VGS = -4.5V, VDS = -10V,|
|Gate-Source Charge|Qgs|—|2.5|—|nC|ID = -4A|
|Gate-Drain Charge|Qgd|—|3.3|—|nC|
|i|Turn-On Delay Time|tD(on)|—|16.8|—|ns|
|Turn-On Rise Time|tr|—|12.4|—|ns|VDS = -10V, VGS = -4.5V,|
|Turn-Off Delay Time|tD(off)|—|94.1|—|ns|RL = 10Ω, RG = 6.0Ω, ID = -1A|
|Turn-Off Fall Time|tf|—|42.4|—|ns|
|——|Notes:|5. Device mounted on FR-4 PCB with 2oz. Copper and test pulse width t|≦|10s.|ee|

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Notes: 5. Device mounted on FR-4 PCB with 2oz. Copper and test pulse width t ≦ 10s. 6. Repetitive rating, pulse width limited by junction temperature. 7. Short duration pulse test used to minimize self-heating effect. 

8. Guaranteed by design. Not subject to product testing. 

2 of 6 **www.diodes.com** 

DMP2035U Document number: DS31830 Rev. 6 - 2 

January 2016 © Diodes Incorporated 

**DMP2035U** 

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25 VGS = -8.0V 20<br>VGS = -4.5V<br>VGS = -3.5V<br>20 VGS = -3.2V<br>VGS = -3.0V 15 V DS  = -5V<br>VGS = -2.0V<br>15 VGS = -2.5V<br>10<br>10 a fe<br>Wot 5 TA = 150 ° C f<br>5 V GS  = -1.5V TA = 125°C TA = 85°C<br>TA = 25°C<br>TA = -55°C<br>0 | Vo ARoSnane 0 vffh<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0.5 1 1.5 2 2.5<br>-VDS, DRAIN-SOURCE VOLTAGE (V) -VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 1 Typical Output Characteristic Fig. 2  Typical Transfer Characteristic<br>0.07 0.05<br>VGS = -4.5V<br>0.06 TC<br>0.04<br>TA = 150°C<br>TA = 125°C<br>0.05<br>eT TA = 85°C<br>0.03<br>VGS = -1.8V<br>0.04 TA = 25°C<br>HAT<br>VGS = -2.5V 0.02 T A  = -55°C<br>0.03<br>si Et al<br>VGS = -4.5V<br>0.02 TPMCrs Ll 0.01<br>0.1 1 10 100 0 4 8 12 16 20<br>-ID, DRAIN-SOURCE CURRENT (A) -ID, DRAIN CURRENT (A)<br>Fig. 3  Typical On-Resistance  Fig. 4 Typical On-Resistance<br>vs. Drain Current and Gate Voltage  vs. Drain Current and Temperature<br>1.61.4 TO 0.060.05 §=69too<br>1.2 0.04<br>Oey) §=—  Cc<br>VGS = -2.5V<br>ID = -5A<br>1.0 V GS  = -4.5V 0.03<br>ID = -10A<br>0.8 eee) 0.02 er VGS = -4.5V ie<br>VGS = -2.5V ID = -10A<br>ID = -5A<br>0.6 vet 0.01 eer<br>ATEEEn = PELE<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C)<br>Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature<br>DSON<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>, DRAIN CURRENT (A)<br>D<br>-I<br>)<br>,  DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN CURRENT (A)<br>D<br>-I<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>, DRAIN-SOURCE<br>DSON<br>R<br>ON-RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br>


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January 2016 © Diodes Incorporated 

**DMP2035U** 

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1.2 20<br>18<br>1.0 TTT] ] I. eei<br>16<br>— I<br>14<br>0.8 ee ee) so<br>ID = -1mA 12<br>0.6 TP~_R 10 aeee ||ao<br>ID = -250µA<br>8 T A  = 150°C<br>0.4 OSU TA = 125°C<br>6<br>TA = 85°C<br>0.2 ee] ty yp yas~ 4 —ry), TA = 25°C<br>2 T A  = -55°C<br>0 0 a Za<br>-50 PEEP -25 0 25 50 E ELL 75 100 125 150 0 a 0.3 0.6 0.9 1.2 1.5<br>TA, AMBIENT TEMPERATURE (°C) -VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current<br>10,000 10,000<br>T A  = 150°C<br>== SSE EERES =e<br>A eG ——————<br>1,000 TAA = 125 125 ° C<br>oS a<br>PEE EY ===<br>Ciss<br>1,000 100<br>RRERRSnneE a= TA = 85°CA = 85°C = 85°C<br>==---_-=== =====S—=<br>\ se<br>10<br>KERR eee<br>TA = 25°CA = 25°C = 25°C<br>Coss<br>PH === T A  = -55°C°CC<br>100 == Crss 1 eeaeae<br>0 2 4 6 8 10 12 14 16 18 20 2 4 6 8 10 12 14 16 18<br>-VDS, DRAIN-SOURCE VOLTAGE (V) -VDS, DRAIN-SOURCE VOLTAGE (V) DS, DRAIN-SOURCE VOLTAGE (V) , DRAIN-SOURCE VOLTAGE (V)<br>Fig. 9 Typical Total Capacitance Fig. 10 Typical Leakage Current<br>vs. Drain-Source Voltage<br>10,000 10,000<br>TA = 150°C T A  = 150°C°CC<br>=e SSS a<br>1,000 TA = 125°C 1,000 TA = 125°CA = 125°C = 125°C°CC<br>100 100<br>TA = 85°C TAA = 85°C 85°C°CC<br>TA = 25 ° C TA = 25°CA = 25°C = 25°C<br>10 TA = -55 ° C 10 TA = -55°CA = -55°C = -55°C-55°C55°C°CC<br>1 1<br>aa a4<br>eS SSS<br>0.1 a 0.1 a SSS SSS<br>1 2 3 4 5 6 7 8 1 2 3 4 5 6 7<br>-VGS, GATE-SOURCE VOLTAGE (V) -VGS, GATE-SOURCE VOLTAGE (V)GS, GATE-SOURCE VOLTAGE (V), GATE-SOURCE VOLTAGE (V)<br>Fig. 11 Gate-Source Leakage Current vs. Voltage Fig. 12 Gate-Source Leakage Current vs. Voltage<br>, LEAKAGE CURRENT (nA)<br>GSS<br>-I<br>DSS<br>, LEAKAGE CURRENT (nA)<br>-I<br>, LEAKAGE CURRENT (nA)<br>GSS<br>-I<br>C, CAPACITANCE (pF)<br>, SOURCE CURRENT (A)<br>S<br>-I<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>-V<br>**----- End of picture text -----**<br>


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10,000<br>T A  = 150°C<br>=e<br>——————<br>1,000 TAA = 125 125 ° C<br>a<br>===<br>100<br>a= TA = 85°CA = 85°C = 85°C<br>=====S—=<br>se<br>10<br>eee<br>TA = 25°CA = 25°C = 25°C<br>=== T A  = -55°C°CC<br>1 eeaeae<br>2 4 6 8 10 12 14 16 18 20<br>-VDS, DRAIN-SOURCE VOLTAGE (V) DS, DRAIN-SOURCE VOLTAGE (V) , DRAIN-SOURCE VOLTAGE (V)<br>Fig. 10 Typical Leakage Current<br>vs. Drain-Source Voltage<br>10,000<br>T A  = 150°C°CC<br>SSS a<br>1,000 TA = 125°CA = 125°C = 125°C°CC<br>100<br>TAA = 85°C 85°C°CC<br>TA = 25°CA = 25°C = 25°C<br>10 TA = -55°CA = -55°C = -55°C-55°C55°C°CC<br>1<br>a4<br>SSS<br>0.1 a SSS SSS<br>1 2 3 4 5 6 7 8<br>-VGS, GATE-SOURCE VOLTAGE (V)GS, GATE-SOURCE VOLTAGE (V), GATE-SOURCE VOLTAGE (V)<br>Fig. 12 Gate-Source Leakage Current vs. Voltage<br>, LEAKAGE CURRENT (nA)<br>GSS<br>-I<br>DSS<br>, LEAKAGE CURRENT (nA)<br>-I<br>**----- End of picture text -----**<br>


4 of 6 **www.diodes.com** 

DMP2035U Document number: DS31830 Rev. 6 - 2 

January 2016 

© Diodes Incorporated 

**DMP2035U** [| 

## LrowES. 

**==> picture [468 x 673] intentionally omitted <==**

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100<br>a OO GO<br>a a 0<br>P W  = 10µs<br>KH HTH ee = a ETRE<br>NE RDS(on) : l<br>10 Cor Limited C<br>eeATER STS To<br>ES A AONEA<br>PTT aNONCTTNORTTTTTANET<br>pt TTT sp XACENTIN NETOEBB<br>DC<br>1 NRorNOOK ORINET<br>PW = 10s<br>eISSN P W  = 1s Ee<br>fe 7 TTT PW = 100ms TT NKREBB<br>ft TT PW = 10ms DNC ON<br>0.1 TTIW [NG PW = 1ms<br>PW = 100µs<br>T = 150°C Leon Nr<br>Tm) a<br>ofale Pulse a<br>0.01 a<br>0.01 0.1 1 10 100<br>-VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 13 SOA, Safe Operation Area<br>1 SSSSS SSS<br>Pt D = 0.7 eset tt ttt<br>ee D = 0.5<br>A D = 0.3<br>PE EE IN TT eT<br>0.1 AE TUE rl TEIN EAT | UIT<br>D = 0.1<br>Ee [A] LN ae<br>eee|a ee a D = 0.9 a<br>D = 0.05 a<br>Fi A 2, RJA(t) = r(t)  * RJA TTT TT<br>Tao R JA  = 158°C/W mani<br>7724 D = 0.02 LL<br>0.01 A e D = 0.01 see| ATsAEa EI) P(pk) Ty t1 esiileen es<br>EE -——+| t2 EHH<br>D = 0.005 TJ - TA = P * RJA(t)<br>a coo<br>Veet fal fife Pde ARP Duty Cycle, D = t 1 /t 2 LLL<br>D = Single Pulse<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (s)<br>Fig. 14 Transient Thermal Response<br>Package Outline Dimensions ge Outline Dimensions e Outline Dimensions<br>Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version.<br>All 7°<br>a H ™ GAUGE PLANE0.25 | Dim  Min SOT23 Max  t—“‘“SCSsSC‘*zS Typ<br>i | J ee A  0.37  ee 0.51  ee 0.40  ee<br>K1 K B  1.20  1.40  1.30<br>C  2.30  2.50  2.40<br>y FU} tp 1 \ a re D  0.89  1.03  0.915<br>A ' M 1 ee F  0.45  ee 0.60  ee 0.535  ee<br>= L L1 G  1.78  2.05  1.83<br>o o — a ee ee ee<br>H  2.80 3.00 2.90<br>i —_ _ ee ee ee ee<br>t l a J  0. ee 013 0.1 ee 0 0 ee .05<br>K  0.890 1.00 0.975<br>C B P| es K1  0 ee .903 1.1 ee 0 1.025<br>Y Ld ee L  0.45  ee 0.61  ee 0.55  ee<br>L1  0.25  0.55  0.40<br>t_ __ _ D ee M  0.085 0.150  ee ee 0.110  ee<br>a  0°  8°  -<br>F G ay |—CsYee All Dimensions in mm  rcee ee ee<br>D<br>, DRAIN CURRENT (A)<br>-I<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


## **Package Outline Dimensions ge Outline Dimensions e Outline Dimensions** 

Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. 

5 of 6 **www.diodes.com** 

DMP2035U Document number: DS31830 Rev. 6 - 2 

January 2016 © Diodes Incorporated 

**DMP2035U** 

## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. 

**==> picture [134 x 104] intentionally omitted <==**

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Y<br>Y1 C<br>Al EH<br>Pod X X1<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value(in mm)**|
|---|---|
|**C**|2.0|
|**X**|0.8|
|**X1**|1.35|
|**Y**|0.9|
|**Y1**|2.9|



## **IMPORTANT NOTICE** 

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Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2016, Diodes Incorporated 

**www.diodes.com** 

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DMP2035U Document number: DS31830 Rev. 6 - 2 

January 2016 © Diodes Incorporated 



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---

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