# Power MOSFET, P Channel, 20 V, 9.3 A, 8000 µohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:3943712RL/)

**URL**: https://novapart.co/products/DMP2022LSSQ-13/power-mosfet-p-channel-20-v-93-a-8000-ohm-soic
**SKU**: DMP2022LSSQ-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2950
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 1.6W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 9.3A |
| Drain Source On State Resistance | 8000µohm |
| Gate Source Threshold Voltage Max | 770mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943712RL/)

**DMP2022LSSQ** ~~a~~ **P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**BVDSS**<br>**RDS(ON)Max**<br>**ID Max**<br>**TA = +25°C**<br>-20V<br>13mΩ @ VGS= -10V<br>-9.3A<br>16mΩ @ VGS= -4.5V<br>-8.3A<br>22mΩ @ VGS= -2.5V<br>-7.2A|**BVDSS**<br>**RDS(ON)Max**<br>**ID Max**<br>**TA = +25°C**<br>-20V<br>13mΩ @ VGS= -10V<br>-9.3A<br>16mΩ @ VGS= -4.5V<br>-8.3A<br>22mΩ @ VGS= -2.5V<br>-7.2A|**BVDSS**<br>**RDS(ON)Max**<br>**ID Max**<br>**TA = +25°C**<br>-20V<br>13mΩ @ VGS= -10V<br>-9.3A<br>16mΩ @ VGS= -4.5V<br>-8.3A<br>22mΩ @ VGS= -2.5V<br>-7.2A|
|---|---|---|
|**BVDSS**|**RDS(ON)Max**|**ID Max**<br>**TA = +25°C**|
|-20V|13mΩ @ VGS= -10V|-9.3A|
||16mΩ @ VGS= -4.5V|-8.3A|
||22mΩ @ VGS= -2.5V|-7.2A|



## **Features** 

- Low On-Resistance 

- Low Gate Threshold Voltage 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

## **Description** 

This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

## **Applications** 

- Backlighting 

- Power Management Functions 

- DC-DC Converters 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **PPAP Capable (Note 4)** 

## **Mechanical Data** 

- Case: SO-8 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals Connections: See Diagram 

- Terminals: Finish - Matte Tin Annealed over Copper Lead Frame. Solderable per MIL-STD-202, Method 208 O **e3** 

- Weight: 0.074g (Approximate) 

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SO-8  D<br>S LI] O Li] D<br>S [| | LI | D<br>G<br>S D<br>P oo -_<br>J G | O D<br>S<br>Pin-Out<br>Top View  Equivalent Circuit<br>Top View<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 5) 

|**Ordering Informationg Information Information** (Note 5)|**Ordering Informationg Information Information** (Note 5)|**Ordering Informationg Information Information** (Note 5)|**Ordering Informationg Information Information** (Note 5)|
|---|---|---|---|
|||||
|**Part Number**|**Compliance**|**Case**|**Packaging**|
|DMP2022LSSQ-13|Automotive|SO-8|2,500/Tape &Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

   2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/. 

   5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

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8 5<br>titi ty ||<br>Jit<br>P2022LS<br>YY WW<br>O<br>1 4<br>PIT LI LI Ld<br>**----- End of picture text -----**<br>


3 = Manufacturer’s Marking P2022LS = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 19 = 2019) WW = Week (01 to 53) 

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**DMP2022LSSQ** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|-20|V|
|Gate-Source Voltage|||VGSS|±12|V|
|Drain Current (Note 6)|Steady<br>State|Steady<br>TA= +25°C<br>TA= +70°C|ID|-9.3<br>-7.4|A|
|Pulsed Drain Current (Note 7)|||IDM|-35|A|
|Avalanche Current, L = 0.3mH|||IAS|-18|A|
|Avalanche Energy, L = 0.3mH|||EAS|48.6|mJ|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 6)|PD|1.6|W|
|Thermal Resistance, Junction to Ambient|RJA|74|°C/W|
|Operating and Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

~~De~~ **Characteristic Symbol** ~~DG~~ **Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8)** ~~ee~~ Drain-Source Breakdown Voltage BVDSS -20   V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS   -1 µA VDS = -20V, VGS = 0V ~~ee~~ Gate-Source Leakage IGSS   100 nA VGS = 12V, VDS = 0V **ON CHARACTERISTICS (Note 8)** ~~a~~ Gate Threshold Voltage VGS( ~~GO~~ TH) -0.6 -0.77 ~~OO~~ -1.1 V VDS = VGS, ID = -250µA  8 13 VGS = -10V, ID = -10A Static Drain-Source On-Resistance RDS(ON)  11 16 mΩ VGS = -4.5V, ID = -9A ~~od~~  17 22 VGS = -2.5V, ID = -8A Forward Transconductance gfs ~~UL~~  28  S VDS = -10V, ID = -10A Diode Forward Voltage (Note 8) VSD -0.5 -0.68 -1.2 V VGS = 0V, IS = -3A ~~Be~~ **DYNAMIC CHARACTERISTICS (Note 9)** ~~a~~ Input Capacitance Ciss  2575  pF Output Capacitance Coss  326  pF VDS = -10V, VGS = 0V f = 1MHz ~~—~~ Reverse Transfer Capacitance Crss  261  pF Gate Resistance RG  10.9  Ω VGS = 0V, VDS = 0V, f = 1MHz ~~ee ee~~ **SWITCHING CHARACTERISTICS (Note 9)** Total Gate Charge Qg  28.1 60.2  VVDSDS = -10V, V = -10V, VGSGS = -4.5V, I = -10V, IDD = -10A  = -10A nC Gate-Source Charge Qgs  5.9  VDS = -10V, VGS = -10V, ID = -10A ~~ee Pp —~~ Gate-Drain Charge Qgd  7.4  VDS = -10V, VGS = -10V, ID = -10A Turn-On Delay Time tD(ON)  4.5 15 ~~ee~~ Turn-On Rise Time tR  3.3 20 VDD = -15V, ID = -1A, VGS = -10V, ns Turn-Off Delay Time tD(OFF)  197 216 RGEN = 6Ω ~~———~~ Turn-Off Fall Time tF  60.5 153 Notes: 6. Device mounted on 2 oz. Copper pads on FR-4 PCB. 7. Pulse width 10µS, Duty Cycle 1%. 

8. Short duration pulse test used to minimize self-heating effect. 

9. Guaranteed by design. Not subject to product testing. 

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30 30<br>28 V GS = -10V VDS = -5.0V<br>26 V GS = -4.5V 25<br>24 VGS = -4.0V<br>22<br>VGS = -3.5V<br>20 20<br>18 fe VGS = -3.0V oo<br>16 Ye VGS = -2.5V VGS = -2.0V 15 ae<br>14<br>12<br>10 | 2 aa 10 fe TA = 150C<br>8<br>6 TA = 125C TA = 85C<br>4 5 TA = 25C<br>2 VGS = -1.6V TA = -55C<br>0 | —________— 0 i _<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0.5 1 1.5 2 2.5 3<br>-VDS, DRAIN -SOURCE VOLTAGE (V) -VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristics Figure 2 Typical Transfer Characteristics<br>0.02 0.03<br>ID = -10A<br>0.028<br>0.018 PT TELE 0.026 oe I D = -9A er<br>VGS = -2.5V 0.024 ID = -8A<br>0.016<br>SHEE) EEE<br>0.022<br>0.014 PrFTee ft i 0.02 TEE TTETETE<br>0.018<br>0.012<br>tet tt VGS = -4.5V tt 0.016 a ee<br>0.01 eee 0.014 Se a<br>VGS = -10V 0.012<br>0.008<br>0.01<br>0.008 re<br>0.006<br>0.006<br>0.004 2 PLL 4 6 8 ETE 10  EEL 12 14 16 18 20 0.0040 FEE 2 4 6 8 10 12<br>-ID, DRAIN SOURCE CURRENT (A) -VGS, GATE SOURCE VOLTAGE (V)<br>Figure 3 Typical On-Resistance vs.  Figure 4 Typical Transfer Characteristics<br>Drain Current and Gate Voltage<br>0.014 1.6<br>VGS = -10V VGS = -4.5V<br>TA = 150C ID = -9A<br>0.012 TA = 125C 1.4 VGS = -10V<br>ID = -10A<br>TA = 85C<br>0.01 COP 1.2 OK<br>TA = 25C VGS = -2.5V<br>ID = -8A<br>0.008 PLattt! Tt Ty 1 OK a<br>TA = -55C<br>0.006 C EPope eee 0.8 PpZ|annann<br>0.0041 EELLLE 3 5 7 9 11 13 15 ELLE 17 19 21 0.6-50 PLE -25 0 25 EL 50 75 ELE 100 125 150<br>-ID, DRAIN SOURCE CURRENT (A) TJ, JUNCTION TEMPERATURE (C)<br>Figure 5 Typical On-Resistance vs.  Figure 6 On-Resistance Variation with Temperature<br>Drain Current and Temperature<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>D<br>, DRAIN CURRENT (A)<br>-I<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>, DRAIN CURRENT (A)<br>-I<br>D<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (NORMALIZED)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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0.024<br>0.022<br>0.02 -LLLLLLLrierie V GS  = -2.5V ro<br>0.018 ID = -8AD = -8A = -8A<br>Coll a<br>0.016<br>ee ol<br>0.014 VGS = -4.5VGS = -4.5V = -4.5V<br>ID = -9AD = -9A = -9A<br>0.012 a<br>0.01 tetee er<br>ee VGS = -10VGS = -10V<br>0.008 I D  = -10A<br>0.006<br>a _<br>0.004<br>a<br>0.002<br>0 FARReeee<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C)J, JUNCTION TEMPERATURE (C), JUNCTION TEMPERATURE (C)C)C)<br>Figure 7 On-Resistance Variation with Temperature<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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0.024 1.4<br>0.022 [V)]<br>0.02 -LLLLLLLrierie V GS  = -2.5V ro —we<br>0.018 ID = -8AD = -8A = -8A T [AGE(] 1.2<br>Coll a SS<br>0.016 V [OL]<br>D<br>0.014 ee VGS = -4.5VGS = -4.5V = -4.5V ol O [L] 1 -™ -I   = 1mAD fe<br>ID = -9AD = -9A = -9A<br>0.012 a [SH] E SS -I   = 250µAD<br>R<br>0.01 tetee VGS = -10VGS = -10V er  = -10V T [H] 0.8 OSSAUn<br>0.008 I D  = -10A<br>0.006 [ATE] G<br>a _ , 0.6 SN<br>0.004<br>a ( [TH)] S NS<br>G<br>0.002 V<br>0 FARReeee 0.4 CTS<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C)J, JUNCTION TEMPERATURE (C), JUNCTION TEMPERATURE (C)C)C) T  , AMBIENT TEMPERATURE (°C)A<br>Figure 7 On-Resistance Variation with Temperature Figure 8 Gate Threshold Variation vs. Ambient Temperature<br>30 10000<br>28<br>26 f = 1MHz<br>HR =a<br>24<br>22 Ciss<br>20<br>18<br>16 I T A = 150C TA= 85C 1000 POLE<br>14<br>12 HE<br>108 AE T A = 125C T A = 25C a C oss<br>Th SESS ES<br>6<br>4 ee)es //seen en P| ft—_|——— Crss aT<br>2 TA= -55C<br>0 fff| YY 100 TLE ELL<br>0 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10 12 14 16 18 20<br>-VSD, SOURCE-DRAIN VOLTAGE (V) -VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9 Diode Forward Voltage vs. Current Figure 10 Typical Junction Capacitance<br>10 1000<br>RDS(ON)<br>Limited<br>/ S e<br>8 100<br>) [A]<br>T [(]<br>N<br>6 E 10<br>R<br>VDS = -10V RU DC<br>ID = -10A C P    = 10sW<br>4 I [N] A 1 P    = 1sW<br>RD P    = 100msW<br>, D P    = 10msW<br>2 - [I] 0.1 T          = 150°CJ(max) P    = 1msW<br>T   = 25°CV     = -10VAGS P    = 100µsW<br>Single Pulse aee<br>0 0.01 DUT on 1 * MRP Board a<br>0 5 10 15 20 25 30 35 40 45 50 55 60 65 0.01 0.1 1 10 100<br>Qg, TOTAL GATE CHARGE (nC) -V    , DRAIN-SOURCE VOLTAGE (V)DS<br>Figure 11 Gate-Charge Characteristics Figure 12 SOA, Safe Operation Area<br>, SOURCE CURRENT (A)<br>-I<br>S<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>-V<br>, DRAIN CURRENT (A)<br>D<br>-I<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>-V<br>**----- End of picture text -----**<br>


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© Diodes Incorporated 

**DMP2022LSSQ** ~~7~~ 

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R aA OT & or”<br>1<br>D = 0.9<br>rr D = 0.7<br>EH D = 0.5 oe ee<br>ET D = 0.3 eAeee aan aa<br>0.1 S| IN gost tf MONA<br>BR D = 0.1<br>EEE EE et 9EEE<br>ee<br>D = 0.05<br>by [TOTAAL] a<br>a PZ |<br>D = 0.02<br>SSA p A<br>0.01 PNMANE CINE<br>D = 0.01 et<br>eee oe AEE EE EE<br>pa<br>D = 0.005<br>Ey THC| Perth PEP RR θJA JA(t) = r(t) * R(t) = r(t) * R θJA JA il<br>R RθJA JA = 92  = 92 ℃ 癈 /W  /W<br>Single Pulse Duty Cycle, D = t1 / t2 Duty Cycle, D = t1/ t2<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIMES (sec)t1, PULSE DURATION TIME (sec)<br>Figure 13 Transient Thermal ResistanceFigure 13 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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SO-8<br>**----- End of picture text -----**<br>


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SO-8<br>Dim  Min  Max  Typ<br>A  1.40  1.50  1.45<br>A1  0.10  0.20  0.15<br>E<br>b  0.30  0.50  0.40<br>c  0.15  0.25  0.20<br>1 D  4.85  4.95  4.90<br>E  5.90 6.10 6.00<br>E1  3.80 3.90 3.85<br>E0  3.85 3.95 3.90<br>b e  --  --  1.27<br>E1<br>h  -  --  0.35<br>h<br>L   0.62  0.82  0.72<br>Q<br>Q 0.60  0.70  0.65<br>7°<br>c All Dimensions in mm<br>A 4°± 3°<br>G auge Plane<br>S eating Plane<br>L<br>e A1 E0<br>D<br>9° (All sides)<br>R 0.1<br>45°<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SO-8** 

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Dimensions Value (in mm)<br>C 1.27<br>X  0.802<br>X1  4.612<br>Y  1.505<br>Y1  6.50<br>**----- End of picture text -----**<br>


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## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2019, Diodes Incorporated 

**www.diodes.com** 

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