# Power MOSFET, P Channel, 20 V, 89 A, 3500 µohm, PowerDI 3333, Surface Mount

![Product image](https://novapart.co/image/farnell:3943703/)

**URL**: https://novapart.co/products/DMP2005UFG-13/power-mosfet-p-channel-20-v-89-a-3500-ohm-powerdi
**SKU**: DMP2005UFG-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2210
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 48W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | PowerDI 3333 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 89A |
| Drain Source On State Resistance | 3500µohm |
| Gate Source Threshold Voltage Max | 700mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943703/)

**DMP2005UFG 20V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8** 

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## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON)max**|**ID max**<br>**TC = +25°C**|
|-20V|4.0mΩ @ VGS= -4.5V|-89A|
||6.5mΩ@VGS= -2.5V|-70A|



## **Features** 

- Low RDS(ON) – ensures on state losses are minimized 

- Small form factor, thermally efficient package enables higher density end products (PowerDI[®] ) 

- Occupies just 33% of the board area occupied by SO-8 enabling smaller end product 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

## **Description** 

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Mechanical Data** 

- Case: PowerDI3333-8 

## **Applications** 

- Load Switch 

- Power Management Functions 

- Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal Connections Indicator: See Diagram 

- Terminal Finish — Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

   - Weight: 0.072 grams (Approximate) 

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<br>PowerDI3333-8<br>D<br>S Pin 1<br>S<br>S<br>G<br>G<br>D<br>D<br>@so® D D S<br>Top View  Bottom View  Equivalent Circuit<br> Information  (Note 4)<br>Part Number Case Packaging<br>DMP2005UFG-7  PowerDI3333-8  2,000/Tape & Reel<br>DMP2005UFG-13  PowerDI3333-8  3,000/Tape & Reel<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

- Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

PowerDI3333-8 

S48 = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 16 = 2016) WW = Week Code (01 to 53) **S48** = 

_PowerDI is a registered trademark of Diodes Incorporated._ DMP2005UFG Document number: DS38932  Rev. 2 - 2 

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**DMP2005UFG** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Units**|
|Drain-Source Voltage|||VDSS|-20|V|
|Gate-Source Voltage|||VGSS|±10|V|
|Continuous Drain Current VGS= -4.5V (Note 7)|Steady<br>State|TC= +25°C<br>TC= +70°C|ID|-89<br>-70|A|
|Continuous Drain Current VGS= -4.5V (Note 6)|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-19<br>-15|A|
|Pulsed Drain Current(380μspulse,dutycycle = 1%)|||IDM|-100|A|
|Maximum Continuous BodyDiode Forward Current(Note 6)|||IS|-2.5|A|
|Avalanche Current(Note 8)L = 0.1mH|||IAS|-27|A|
|Avalanche Energy (Note 8)L = 0.1mH|||EAS|35|mJ|



**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**<br>~~a~~<br>~~te5)~~||**Symbol**<br>~~a~~|**Value**<br>~~a~~|**Units**<br>~~a~~|
|Total Power Dissipation<br>~~te5)~~|TA= +25°C|PD|1.0|W|
|Thermal Resistance,Junction to Ambient(Note 5)<br>~~te5)~~<br>~~GO~~|SteadyState<br>~~GO~~|RJA<br>~~GO~~|128<br>~~GO~~|°C/W<br>~~GO~~|
|Total Power Dissipation<br>~~te)~~|TA= +25°C<br>~~te)~~|PD<br>~~te)~~|~~te)~~|W<br>~~te)~~|
|Thermal Resistance,Junction to Ambient(Note 6)<br>~~pT~~|SteadyState<br>~~pT~~|RJA<br>~~pT~~|~~pT~~|°C/W<br>~~pT~~|
|Total Power Dissipation(Note 7)<br>~~OO:~~|TC= +25°C<br>~~OO:~~|PD<br>~~OO:~~|~~OO:~~|W<br>~~OO:~~|
|Thermal Resistance,Junction to Case(Note 7)<br>~~pf~~||RJC<br>~~pf~~|~~pf~~|°C/W<br>~~pf~~|
|Operatingand Storage Temperature Range<br>~~fd~~||TJ,TSTG<br>~~fd~~|-55 to +150<br>~~fd~~|°C<br>~~fd~~|



**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~a~~|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 9)**<br>~~TT~~<br>~~pO~~|||||||
|Drain-Source Breakdown Voltage<br>~~pO~~|BVDSS|-20|—|—|V|VGS= 0V,ID= -250µA|
|Zero Gate Voltage Drain Current<br>~~pO~~<br>~~CCC~~|IDSS<br>~~CCC~~|—<br>~~CCC~~|—<br>~~CCC~~|-1<br>~~CCC~~|µA<br>~~CCC~~|VDS= -16V,VGS= 0V<br>~~CCC~~|
|Gate-Source Leakage<br>~~OC~~|IGSS<br>~~OC~~|—<br>~~OC~~|—<br>~~OC~~|±100<br>~~OC~~|nA<br>~~OC~~|VGS= ±8V,VDS= 0V<br>~~OC~~|
|**ON CHARACTERISTICS(Note 9)**<br>~~TT~~<br>~~pO~~<br>~~rs a~~<br>~~Tt~~|||||||
|Gate Threshold Voltage<br>~~pO~~|VGS(TH)|-0.3<br>~~rs a~~|-0.7<br>~~a~~|-0.9|V|VDS= VGS,ID= -250µA<br>~~Tt~~|
|Static Drain-Source On-Resistance<br>~~pO~~|RDS(ON)|—<br>~~rs a~~<br>~~rs~~|3.5<br>~~a~~<br>~~ee~~|4.0<br>~~ee~~|mΩ<br> <br>~~ee~~|VGS= -4.5V,ID= -15A<br>~~Tt~~<br>~~OO~~|
|||—<br>~~rs a~~<br>~~rs~~<br>~~re~~|5.4<br>~~a~~<br>~~ee~~<br>~~ee~~|6.5<br>~~ee~~<br>~~ee~~||VGS= -2.5V,ID= -10A<br>~~Tt~~<br>~~OO~~<br>~~OO~~|
|||—<br>~~rs ~~<br>~~re~~|8.0<br> ~~ee~~<br>~~ee~~|14<br>~~ee ~~<br>~~ee~~||VGS= -1.8V,ID= -1A<br> ~~OO~~<br>~~OO~~|
|Diode Forward Voltage<br>~~po~~|VSD<br>~~po~~|—<br>~~re~~<br>~~po~~|-0.7<br>~~ee~~<br>~~po~~|-1.2<br>~~ee~~<br>~~po~~|V<br>~~ee ~~<br>~~po~~|VGS= 0V,IS= -10A<br> ~~OO~~<br>~~po~~|
|**DYNAMIC CHARACTERISTICS(Note 10)**<br>~~TT~~|||||||
|Input Capacitance<br>~~a~~|Ciss<br>~~a~~|—<br>~~a~~|4,670<br>~~a~~|—<br>~~a~~|pF|VDS= -10V, VGS= 0V<br>f = 1.0MHz|
|Output Capacitance<br>~~a~~|Coss<br>~~a~~|—<br>~~a~~|650<br>~~a~~|—<br>~~a~~|||
|Reverse Transfer Capacitance<br>~~a~~|Crss<br>~~a~~|—<br>~~a~~|550<br>~~a~~<br>~~CO~~|—<br>~~a~~|||
|Gate Resistance<br>~~OO~~|RG<br>~~OO~~|—<br>~~OO~~|3.5<br>~~OO~~<br>~~CO~~|—<br>~~OO~~|Ω<br>~~OO~~|VDS= 0V,VGS= 0V,f = 1.0MHz<br>~~OO~~|
|Total Gate Charge(VGS= -4.5V)<br>~~a~~|Qg<br>~~a~~|—<br>~~a~~|55<br>~~CO~~<br>~~a~~|—<br>~~a~~|nC|VDD= -10V, ID= -20A|
|Total Gate Charge(VGS= -10V)<br>~~a~~|Qg<br>~~a~~|—<br>~~a~~|125<br>~~a~~|—<br>~~a~~|||
|Gate-Source Charge<br>~~a~~|Qgs<br>~~a~~|—<br>~~a~~|7.8<br>~~a~~|—<br>~~a~~|||
|Gate-Drain Charge<br>~~a~~|Qgd<br>~~a~~|—<br>~~a~~|16.5<br>~~a~~|—<br>~~a~~|||
|Turn-On DelayTime<br>~~a~~|tD(ON)<br>~~a~~|—<br>~~a~~|9.5<br>~~a~~|—<br>~~a~~|ns|VGS= -4.5V, VDD= -10V,<br>RG= 1Ω, RG= 1ΩID= -10A|
|Turn-On Rise Time<br>~~a~~|tR<br>~~a~~|—<br>~~a~~|10.5<br>~~a~~|—<br>~~a~~|||
|Turn-Off DelayTime<br>~~a~~|tD(OFF)<br>~~a~~|—<br>~~a~~|115<br>~~a~~|—<br>~~a~~|||
|Turn-Off Fall Time<br>~~a~~|tF<br>~~a~~<br>~~OC~~|—<br>~~a~~<br>~~OC~~|85<br>~~a~~<br>~~OC~~|—<br>~~a~~|||
|Reverse RecoveryTime<br>~~a~~|tRR<br>~~a~~<br>~~OC~~|—<br>~~a~~<br>~~OC~~|25<br>~~a~~<br>~~OC~~|—<br>~~a~~|ns|IF= -10A,di/dt = 100A/µs|
|Reverse RecoveryCharge<br>~~pT~~|QRR<br>~~OC~~<br>~~pT~~|—<br>~~OC~~<br>~~pT~~|14<br>~~OC~~<br>~~pT~~|—<br>~~pT~~|nC<br>~~pT~~|IF= -10A,di/dt = 100A/µs<br>~~pT~~|



- Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 

   6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 

   7. Thermal resistance from junction to soldering point (on the exposed drain pad). 

   8. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 

   9. Short duration pulse test used to minimize self-heating effect. 

   10. Guaranteed by design. Not subject to product testing. 

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30 30<br>VGS  = -4.5V<br>25 25 VDS = -5.0V<br>VGS = -2.5V<br>)<br>20 fe| VGS  = -2.0V [A] (T 20 o i<br>N<br>VGS  = -1.8V ER<br>R<br>15 UC 15 TJ = 150 C<br>10 Po VGS  = -1.5V I [N] ARD 10 E T J = 125 C<br>I [,] D TJ = 85 C<br>5 OS 5 E TJ = 25 C<br>VGS = -1.2V TJ = -55 C<br>0 An 0 e<br>0 0.5 1 1.5 2 0 0.5 1 1.5 2<br>VDS , DRAIN -SOURCE VOLTAGE (V) V GS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristics Figure 2 Typical Transfer Characteristics<br>0.012 0.02<br>ID = -15A<br>0.01<br>0.015 ae<br>VGS = -1.8V<br>0.008<br>0.006 0.01<br>VGS  = -2.5V Vit ID = -10A<br>0.004<br>VGS  = -4.5V 0.005<br>0.002 Ky<br>0 0 | Ce<br>0 5 10 15 20 25 30 0 2 4 6 8 10<br>I D, DRAIN SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3 Typical On-Resistance vs.  Figure 4 Typical Drain-Source On-Resistance<br>Drain Current and Gate Voltage  vs. Gate-Source Voltage<br>) 0.007 1.8<br>[NCE(] A 0.006 TJ = 150 C 1.6 TCOLEEOOoLEE<br>TJ = 125 C VGS = -4.5V<br>[RESIST] 0.005 TJ = 85C 1.4 COLE ID = -15.0A<br>[N-] O<br>0.004 TJ = 25C 1.2 VGS = -2.5V<br>ID = -10.0A<br>[SOURCE] 0.003 TJ = -55C 1 BEEED=08Sana<br>D [RAIN-]<br>,) 0.002<br>O [N] 0.8<br>R [(] SD VGS = -4.5V Se annnn<br>0.001<br>0 5 10 15 20 25 30 0.6 PET<br>-50 -25 0 25 50 75 100 125 150<br>IFigure 5 Typical On-Resistance vs. D, DRAIN SOURCE CURRENT (A) TJ, JUNCTION TEMPERATURE ( C)<br>Drain Current and Temperature  Figure 6 On-Resistance Variation with Temperature<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN CURRENT (A)<br>ID<br>)<br><br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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0.01 1.2<br>1<br>0.008<br>VGS = -2.5V ID = -1mA<br>ID = -10.0A 0.8<br>0.006 ><br>0.6 I D  = -250µA<br>0.004 pease aw<br>VGS = -4.5V 0.4<br>ID = -15.0A<br>0.002 cee CLL<br>0.2<br>0 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (°C)<br>Figure 7 On-Resistance Variation with Temperature Figure 8 Gate Threshold Variation vs. Junction Temperature<br>30 10000 [_a<br>—— C iss<br>25 a<br>20 T A = 150 C<br>15 TA = 125 C = he 1000 Os Coss<br>TA= 25 C<br>TA= 85 C || a C rss a<br>10 ———<br>TA= -55 C<br>5<br>f=1MHz<br>0 OD 100 Ft tf<br>0 0.3 0.6 0.9 1.2 0 5 10 15 20<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9 Diode Forward Voltage vs. Current Figure 10 Typical Junction Capacitance<br>10 1000<br>) R Limited DS(on) P W  = 100µs<br>( [V]<br>G [E] 8 VDS = -10V 100 eeEE HEHE THE oy<br>ID = -20A<br>O [LTA]<br>V POTISAIETT<br>6 10<br>O [LD]<br>H<br>S DC<br>Peet Cir §s —SERNATIN ZEST NC TTT<br>4 1 PW = 10s<br>T [HRE] PW = 1s<br>T [E] 1, T J(m ax)  = 150°C TE bec Puy P W  ee  = 100ms PW = 10ms ton SSIS<br>G [A] VG [S] 2 0.1 eT TV 6 CGS = = 25= 25°C -4.5V°C eeaE Pw PWP = 1msW ©  = 100 nsRSTSee µs<br>Vos =45V 0 ERR SSSS<br>0.01 puTon1*MepSingle DUT on 1 Single Pulse Pulse * MRP Board [LUMIBoard lll] | TTTFrit[TTTCl<br>0 0.01 0.1 1 10 100<br>0 20 40 60 80 100 120 140<br>V DS, DRAIN-SOURCE VOLTAGE (V)<br>Qg, TOTAL GATE CHARGE (nC) Figure 12 SOA, Safe Operation Area<br>Figure 11 Gate Charge<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(on)<br>R<br>, GATE THRESHOLD VOLTAGE (V)<br>GS<br>V<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, SOURCE CURRENT (A)<br>IS<br>GS(TH)<br>, GATE THRESHOLD VOLTAGE (V)<br>V<br>D<br>, DRAIN CURRENT (A)<br>I<br>**----- End of picture text -----**<br>


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1<br>D = 0.9<br>D = 0.7<br>ee<br>D = 0.5<br>ee ae<br>D = 0.3 AA a<br>TT ET TTT eer TTT ETT TL TT<br>0.1 a a Zell<br>FEE D = 0.1 SA| “i |<br>eeaa laa ae a a<br>D = 0.05<br>TAIT<br>EL cA |<br>Ee7200<br>D = 0.02<br>ea Z20 NN |<br>0.01<br>D = 0.01<br>ae cae ceeee ae eee ee cecil<br>ee ci en<br>THAT D = 0.005 TET R JA (t) = r(t) * R  JA nl<br>EN a | i<br>RJA = 128°C/W<br>Single Pulse Duty Cycle, D = t1/ t2<br>0.001 Cra COMME CECI<br>0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIMES (sec)t1, PULSE DURATION TIME (sec)<br>Figure 13  Transient Thermal ResistanceFigure 13 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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**DMP2005UFG** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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PowerDI3333-8<br>**----- End of picture text -----**<br>


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A1 A3<br>A<br>Seating Plane<br>D<br>L(4x)<br>D2<br>1<br>Pin #1 ID<br>E4<br>b2(4x) ni<br>E<br>E2 E3<br>L1(3x)<br>8<br>z(4x) b<br>e<br>**----- End of picture text -----**<br>


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PowerDI3333-8<br>Dim  Min  Max  Typ<br>A  0.75 0.85 0.80<br>A1  0.00 0.05 0.02<br>A3   0.203<br>b  0.27  0.37  0.32<br>b2  0.15 0.25 0.20<br>D  3.25 3.35 3.30<br>D2  2.22  2.32  2.27<br>E  3.25 3.35 3.30<br>E2  1.56 1.66 1.61<br>ae E3  0.79 0.89 0.84<br>E4  1.60 1.70 1.65<br>e   0.65<br>L  0.35 0.45 0.40<br>L1    0.39<br>z    0.515<br>All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**PowerDI3333-8** 

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**----- Start of picture text -----**<br>
X3<br>X2<br>8<br>Y1 X1<br>Y2<br>Y3<br>Ey<br>Y<br>1<br>gg X C<br>**----- End of picture text -----**<br>


|**Dimensions Value**<br>**C**|**Dimensions Value(in mm)**|
|---|---|
|**C**|0.650|
|**X**|0.420|
|**X1**|0.420|
|**X2**|0.230|
|**X3**|2.370|
|**Y**|0.700|
|**Y1**|1.850|
|**Y2**|2.250|
|**Y3**|50<br>3.700|



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DMP2005UFG Document number: DS38932  Rev. 2 - 2 

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**DMP2005UFG** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2016, Diodes Incorporated 

**www.diodes.com** 

7 of 7 **www.diodes.com** 

DMP2005UFG Document number: DS38932  Rev. 2 - 2 

November 2016 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMP2005UFG-13/power-mosfet-p-channel-20-v-89-a-3500-ohm-powerdi)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmp2005ufg-13/mosfet-p-ch-20v-89a-powerdi-3333/dp/3943703)
---

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