# Power MOSFET, P Channel, 20 V, 430 mA, 0.7 ohm, SOT-523, Surface Mount

![Product image](https://novapart.co/image/farnell:3943701/)

**URL**: https://novapart.co/products/DMP2004TK-7/power-mosfet-p-channel-20-v-430-ma-07-ohm-sot-523
**SKU**: DMP2004TK-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1090
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 230mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SOT-523 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 430mA |
| Drain Source On State Resistance | 0.7ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943701/)

**DMP2004TK** _ 

**P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Features** 

## **Mechanical Data** 

- Low On-Resistance 

   - Case: SOT523 

- Low Gate Threshold Voltage 

   - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Low Input Capacitance 

   - Moisture Sensitivity: Level 1 per J-STD-020 

- Fast Switching Speed 

   - Terminals: Finish  Matte Tin Annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 

- Low Input/Output Leakage 

- **ESD Protected Gate** 

   - Terminal Connections: See Diagram 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

   - Weight: 0.002 grams (Approximate) 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

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 Qualified to AEC-Q101 Standards for High Reliability<br>SOT523  D<br>D<br>G<br>G S<br>ESD PROTECTED () & & Gate Protection Diode S _<br>Top View  Equivalent Circuit  Top View<br>Ordering Informationg Information Information (Note 4)<br>Part Number Case Packaging<br>DMP2004TK-7  SOT523  3,000/Tape & Reel<br>**----- End of picture text -----**<br>


## **Ordering Informationg Information Information** (Note 4) 

- Notes:        1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

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PAB = Product Type Marking Code<br>YM = Date Code Marking<br>PAB YM<br>Y = Year (ex: F = 2018)<br>M = Month (ex: 9 = September)<br>Date Code Key<br>Year 2006 2007 … 2014 2015 2016 2017  2018  2019  2020  2021  2022<br>Code T  U  …  B  C  D  E  F  G  H  I  J<br>-_ f+ — — — —} —} — + — —} — —}F ~<br>Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>ee Code 1  2  3 4  5 6 ee 7  8 9 O N  D<br>**----- End of picture text -----**<br>


1 of 6 **www.diodes.com** 

DMP2004TK Document number: DS30932 Rev. 7 - 2 

October 2018 © Diodes Incorporated 

**DMP2004TK** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

||||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage||VDSS|-20|V|
|Gate-Source Voltage||VGSS|±8|V|
|Drain Current (Note 5)<br>Steady<br>State|Steady<br>State<br>TA= +25C<br>TA= +85C|ID|-430<br>-310|mA|
|Pulsed Drain Current(Note 6)||IDM|-750|mA|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)||PD|230|mW|
|Thermal Resistance,Junction to Ambient(Note 5)|SteadyState|RθJA|558|°C/W|
|Total Power Dissipation(Note 6)||PD|320|mW|
|Thermal Resistance,Junction to Ambient(Note 6)|SteadyState|RθJA|393|°C/W|
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7)**|||||||
|Drain-Source Breakdown Voltage<br>~~ep~~|BVDSS<br>~~ep~~|-20<br>~~ep~~|<br>~~ep~~|<br>~~ep~~|V<br>~~ep~~|VGS= 0V,ID= -250A<br>~~ep~~|
|Zero Gate Voltage Drain Current<br>~~ep~~|IDSS<br>~~ep~~|<br>~~ep~~|<br>~~ep~~|-1.0<br>~~ep~~|A<br>~~ep~~|VDS= -20V,VGS= 0V<br>~~ep~~|
|Gate-Source Leakage<br>~~ep~~|IGSS<br>~~ep~~|<br>~~ep~~|<br>~~ep~~|1.0<br>~~ep~~|A<br>~~ep~~|VGS=4.5V,VDS= 0V<br>~~ep~~|
|**ON CHARACTERISTICS(Note 7)**<br>~~ee~~|||||||
|Gate Threshold Voltage<br>~~ee~~<br>~~po~~|VGS(TH)<br>~~ee~~|-0.5<br>~~ee~~<br>~~||~~|<br>~~ee~~<br>~~||~~|-1.0<br>~~ee~~<br>~~||~~|V<br>~~ee~~<br>~~||~~|VDS= VGS,ID= -250A<br>~~ee~~|
|Static Drain-Source On-Resistance<br>~~po~~|RDS(ON)|<br>~~||~~|0.7<br>1.0<br>1.3<br>~~||~~|1.1<br>1.6<br>2.4<br>~~||~~|Ω<br>~~||~~|VGS= -4.5V,ID= -430mA|
|||||||VGS= -2.5V,ID= -300mA|
|||||||VGS= -1.8V,ID= -150mA|
|Diode Forward Voltage<br>~~po~~|VSD|<br>~~||~~|-0.8<br>~~||~~|-1.4<br>~~||~~|V<br>~~||~~|VGS= 0V,IS= -115mA|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~po~~<br>~~||~~|||||||
|Input Capacitance<br>~~———~~|Ciss<br>~~———~~|<br>~~———~~|47<br>~~———~~|<br>~~———~~|pF<br>~~———~~|VDS= -16V, VGS= 0V<br>f = 1.0MHz<br>~~———~~|
|Output Capacitance<br>~~———~~|Coss<br>~~———~~|<br>~~———~~|6.8<br>~~———~~|<br>~~———~~|pF<br>~~———~~||
|Reverse Transfer Capacitance<br>~~———~~|Crss<br>~~———~~|<br>~~———~~|4.9<br>~~———~~|<br>~~———~~|pF<br>~~———~~||
|Gate Resistance<br>~~———~~<br>~~———_—~~|Rg<br>~~———~~<br>~~———_—~~|<br>~~———~~|240<br>~~———~~|<br>~~———~~<br>~~e~~|Ω<br>~~———~~<br>~~e~~|VDS= 0V,VGS= 0V<br>~~———~~<br>~~ee~~|
|Total Gate Charge VGS= -4.5V<br>~~———_—~~|Qg<br>~~———_—~~||0.55|<br>~~e~~|nC<br>~~e~~|VDS= -10V, ID= -250mA<br>~~ee~~<br>~~ee~~|
|Total Gate Charge VGS= -8V<br>~~———_—~~|Qg<br>~~———_—~~||0.97|<br>~~e~~|nC<br>~~e~~||
|Gate-Source Charge<br>~~———_—~~|Qgs<br>~~———_—~~||0.05|<br>~~e~~|nC<br>~~e~~||
|Gate-Drain Charge<br>~~———_—~~<br>~~———_—~~|Qgd<br>~~———_—~~<br>~~———_—~~||0.1|<br>~~e~~<br>~~ee~~|nC<br>~~e~~<br>~~ee~~||
|Turn-On DelayTime<br>~~———_—~~<br>~~———_—~~|tD(ON)<br>~~———_—~~<br>~~———_—~~||5.9|<br>~~e~~<br>~~ee~~|ns<br>~~e~~<br>~~ee~~|VDD= -3V, VGS= -2.5V,<br>RG= 25Ω, ID= -100mA<br>~~ee~~<br>~~ee~~|
|Turn-On Rise Time<br>~~———_—~~|tR<br>~~———_—~~||3.3|<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off DelayTime<br>~~———_—~~|tD(OFF)<br>~~———_—~~||25.5|<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~———_—~~|tF<br>~~———_—~~||19.3|<br>~~ee~~|ns<br>~~ee~~||
|Reverse RecoveryTime<br>~~———_—~~<br>~~———_——_——————————~~|tRR<br>~~———_—~~<br>~~———_——_——————————~~|<br>~~———_——_——————————~~|7.3<br>~~———_——_——————————~~|<br>~~ee~~<br>~~———_——_——————————~~|ns<br>~~ee~~<br>~~———_——_——————————~~|IF=-1A,di/dt=-100A/μs<br>~~ee~~<br>~~———_——_——————————~~|
|Reverse RecoveryCharge<br>~~———_——_——————————~~|QRR<br>~~———_——_——————————~~|<br>~~———_——_——————————~~|1.9<br>~~———_——_——————————~~|<br>~~———_——_——————————~~|nC<br>~~———_——_——————————~~|IF=-1A,di/dt=-100A/μs<br>~~———_——_——————————~~|



6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided. 

7. Short duration pulse test used to minimize self-heating effect. 

8. Guaranteed by design. Not subject to product testing. 

2 of 6 **www.diodes.com** 

DMP2004TK Document number: DS30932 Rev. 7 - 2 

October 2018 © Diodes Incorporated 

**DMP2004TK** 

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1.0   1<br> VGS = -2.5V  VDS = -5V  TA=-55 ℃<br>0.8    V VGS GS = -4.0V = -3.0V   VGS = -2.0V  0.8  TA=25 ℃<br>TA=85 ℃<br> VGS = -4.5V<br>0.6   0.6<br> VGS = -8.0V<br>0.4   aa n  VGS = -1.5V  0.4  fe<br>Poo fe<br>0.2   0.2  TA=125 ℃<br>TA=150 ℃<br> VGS = -1.0V<br>0.0   ——p o— 0  yJ y<br>0  1  2  3  4  5  0  0.5  1  1.5  2  2.5  3<br>VDS, DRAIN-SOURCE VOLTAGE (V)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1.Typical Output Characteristic  Figure 2. Typical Transfer Characteristic<br>5<br>1.4<br>4<br>1.2  eee<br> VGS = -2.5V<br>3<br>1  B e e eee ID = -430mA  eee<br>0.8   VGS = -4.5V  2  ID = -300mA<br>oT OE<br>0.6  os 1<br>eee 0  ee<br>0.4<br>0  2  4  6  8<br>0  0.2  0.4  0.6  0.8  1<br>ID, DRAIN-SOURCE CURRENT (A)   Figure 4. Typical Transfer Characteristic  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs. Drain Current<br>and Gate Voltage<br>1.6<br>1.2<br>VGS=-4.5V  TA=150 ℃<br>1.4  EERRREEP<br>1<br>TA=125 ℃<br>1.2  Lt Le<br>TA=85 ℃<br>0.8<br> VGS = -4.5V,<br>1  ID = -430mA<br>TA=25 ℃<br>0.6  0.8  a an<br>Jer<br>TA= -55 ℃  VGS = -2.5V, ID = -300mA<br>Sli t<br>0.6<br>0.4<br>-50  -25  0  25  50  75  100 125 150<br>0  0.2  0.4  0.6  0.8  1<br>ID, DRAIN CURRENT (A)  TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 5. Typical On-Resistance vs. Drain Current and  Figure 6. On-Resistance Variation with<br>Temperature  Temperature<br>, DRAIN CURRENT (A)<br>, DRAIN CURRENT (A)  ID<br>ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>DS(ON) R<br>R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)  DS(ON)<br>DS(ON) R<br>R<br>**----- End of picture text -----**<br>


3 of 6 **www.diodes.com** 

DMP2004TK Document number: DS30932 Rev. 7 - 2 

October 2018 

© Diodes Incorporated 

**DMP2004TK** 

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1.5  0.9<br>0.8<br>1.2   VGS = -2.5V, ID = -300mA<br>TTT<br>ID = -1mA<br>0.7<br>S ee<br>0.9<br>0.6<br>ID = -250μA<br>oO o!<br>0.6<br> VGS = -4.5V, ID = -430mA  0.5<br>C oP SAS<br>-COTET PS<br>0.4<br>0.3<br>-50  -25  0  25  50  75  100  125  150<br>-50  -25  0  25  50  75  100  125  150<br>TJ, JUNCTION TEMPERATURE ( ℃ )  Figure 8. Gate Threshold Variation vs. TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 7. On-Resistance Variation with<br>JunctionTemperature<br>Temperature<br>1  100<br>f=1MHz<br>VGS = 0V  Ciss<br>0.8<br>a<br>0.6<br>10   Coss<br>eee | Se e<br>0.4<br>TJ= 150 ℃ [ TJ= 85 ℃ ee Crss<br>0.2  TJ= 25 ℃ es<br>TJ= 125 ℃ yy ee ee<br>TJ= -55 ℃<br>Po 1   ee<br>0<br>0  5  10  15  20<br>0  0.3  0.6  0.9  1.2  1.5<br>VSD, SOURCE-DRAIN VOLTAGE (V)  VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current  Figure 10. Typical Junction Capacitance<br>8  10<br>R LIMITED<br>DS(ON)  PW=1ms<br>6  ) 1  es<br>PW=100µs<br>4  0.1  PW=10ms<br>PW=100ms<br>2   VDS = -10V, ID = -250mA  0.01  TJ(MAX)=150 ℃ PW=1s  PW=10s<br>TC=25 ℃ DC<br>Single Pulse<br>DUT on 1*MRP board<br>0  aa 0.001  a. V GS = -8V<br>0  Tt 0.2  0.4  ft 0.6  0.8  1  0.1  1  Hc 10  100<br>Qg (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 12. SOA, Safe Operation Area<br>Figure 11. Gate Charge<br>, GATE THRESHOLD VOLTAGE (V)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>GS(TH)<br>V<br>DS(ON)<br>R<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


4 of 6 **www.diodes.com** 

DMP2004TK Document number: DS30932 Rev. 7 - 2 

October 2018 © Diodes Incorporated 

**DMP2004TK** 

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1<br>D=0.9<br>D=0.5<br>a Saas sit > ct et al<br>D=0.7<br>D=0.3<br>TE Eh<br>0.1  RTLUIMCT [airs:] Ttpeaeh th TEE<br>D=0.1<br>p Sarn ereAgathTTUII UT LUI LU<br>p D=0.05  e<br>Hl TTA<br>ce a||<br>0.01  A D=0.02  Coll TI UTIL LLIN | EITM ET<br>P aLee D=0.01  a 2eeA0 ee ee eee<br>es AT iii TT RθJA(t) = r(t) * RθJA LUT<br>|| | at7 A D=0.005  PE TT RθJA= 559 ℃ /W  UTCI<br>Duty Cycle, D = t1 / t2<br>D=Single Pulse<br>0.001<br>0.00001  0.0001  0.001  0.01  0.1  1  10  100  1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT523** 

**==> picture [438 x 204] intentionally omitted <==**

**----- Start of picture text -----**<br>
E E1<br>SOT523<br>Dim  Min  Max  Typ<br>b =J | Pp|—— A1  |TT 0.00 0.10 0.05<br>| A2  | 0.60 | 0.80 | 0.7 i 5<br>| A3  |TT 0.45 0.65 0.50<br>b 0.15 0.30 0.22<br>_ —_ b || c || 0.10 | | 0.2 CTT 0 | 0.12  i<br>e1 D  1.50 1.70 1.60<br>| |TT<br>| E  | 1.45 | 1.75 | 1.60 i<br>D E1  0.75 0.85 0.80<br>|| e  | 0.50 BSC<br>| e1  | ti“‘;‘CSCSC*é‘*C 0.90 | 1.10 J 1.00 i<br>L  0.20 0.40 0.33<br>A2 7 | a | 0° TT --  8°<br>A3<br>' [|| rrrt—“‘CSCSC™CTC*sC All Dimensions in mm  | | TTS<br>c a<br>A1 e L<br>**----- End of picture text -----**<br>


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DMP2004TK Document number: DS30932 Rev. 7 - 2 

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**DMP2004TK** 

## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **SOT523** 

**==> picture [522 x 211] intentionally omitted <==**

**----- Start of picture text -----**<br>
T e Dimensions  Value<br>Y1 C (in mm)<br>C  1.29<br>X  0.40<br>X1  0.70<br>Y Y  0.51<br>Y1  1.80<br>X<br>X1<br>eae<br>IMPORTANT NOTICE<br>DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,<br>INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE<br>(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).<br>**----- End of picture text -----**<br>


Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2018, Diodes Incorporated 

**www.diodes.com** 

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DMP2004TK Document number: DS30932 Rev. 7 - 2 

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## Links

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