# Power MOSFET, P Channel, 20 V, 150 A, 2200 µohm, PowerDI 5060, Surface Mount

![Product image](https://novapart.co/image/farnell:4318565/)

**URL**: https://novapart.co/products/DMP2003UPS-13/power-mosfet-p-channel-20-v-150-a-2200-ohm-powerdi
**SKU**: DMP2003UPS-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4500
**Stock**: 10+
**Lead Time**: 316 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.4W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PowerDI 5060 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 150A |
| Drain Source On State Resistance | 2200µohm |
| Gate Source Threshold Voltage Max | 1.4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4318565/)

~~@~~ **Green** 

**DMP2003UPS** TT 

**20V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON)**|**ID **<br>**TC = +25°C**|
|-20V|2.2mΩ@VGS= -10V|-150A|
||2.55mΩ@VGS= -4.5V|-120A|
||4.0mΩ@VGS= -2.5V|-90A|



## **Features** 

- Thermally Efficient Package-Cooler Running Applications 

- High Conversion Efficiency 

- Low RDS(ON) – Minimizes On State Losses 

- <1.1mm Package Profile – Ideal for Thin Applications 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Description** 

This new generation MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch. 

## **Applications** 

- Switch 

## **Mechanical Data** 

- Case: PowerDI[®] 5060-8 

- Case Material: Molded Plastic, ―Green‖ Molding Compound; UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal Finish - Matte Tin Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208 

   - Weight: 0.097 grams (Approximate) 

- 

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PowerDI5060-8 D<br>S D<br>Pin1<br>S D<br>G S D<br>G D<br>S<br>Top View  Bottom View  Internal Schematic  Top View<br>Pin Configuration<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMP2003UPS-13|PowerDI5060-8|2,500 / Tape & Reel|



- Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 

      2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

      3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

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PowerDI5060-8<br>D D D D<br>; SH :<br>P2003US<br>YY WW<br>S S S G<br>**----- End of picture text -----**<br>


## air 

=Manufacturer’s Marking P2003US = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 17 = 2017) WW = Week Code (01 to 53) 

_PowerDI is a registered trademark of Diodes Incorporated._ 

1 of 7 **www.diodes.com** 

DMP2003UPS Document number: DS39597  Rev. 2 - 2 

October 2017 © Diodes Incorporated 

**DMP2003UPS** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage||VDSS|-20|V|
|Gate-Source Voltage||VGSS|±12|V|
|Continuous Drain Current, VGS= -10V (Note 7)|TC= +25°C<br>TC= +70°C|ID|-150<br>-120|A|
|Pulsed Drain Current(10μs Pulse,DutyCycle = 1%)||IDM|-350|A|
|Maximum Continuous BodyDiode Forward Current(Note 7)||IS|-120|A|
|Pulsed BodyDiode Forward Current(10μs Pulse,DutyCycle = 1%)||ISM|-350|A|
|Avalanche Current,L = 0.1mH(Note 8)||IAS|-32|A|
|Avalanche Energy,L = 0.1mH(Note 8)||EAS|67|mJ|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)||PD|1.4|W|
|Thermal Resistance,Junction to Ambient(Note 5)|Steady State|RJA|90|°C/W|
|Total Power Dissipation(Note 6)||PD|2.7|W|
|Thermal Resistance,Junction to Ambient(Note 6)|Steady State|RJA|46|°C/W|
|Total Power Dissipation(Note 7)||PD|80|W|
|Thermal Resistance, Junction to Case(Note 7)||RJC|1.5|°C/W|
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~ee~~|**Symbol**<br>~~ee~~|**Min**<br>~~ee~~|**Typ **<br>~~ee~~|**Max**<br>~~ee~~|**Unit**<br>~~ee~~|**Test Condition**<br>~~ee~~|
|**OFF CHARACTERISTICS(Note 9) **<br>~~ee~~<br>~~————~~|||||||
|Drain-Source Breakdown Voltage<br>~~ee~~<br>~~————~~|BVDSS<br>~~ee~~|-20<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|V<br>~~ee~~|VGS= 0V,ID= -250µA<br>~~ee~~|
|Zero Gate Voltage Drain Current<br>~~————~~|IDSS|—|—|-1|µA|VDS= -16V,VGS= 0V|
|Gate-Source Leakage<br>~~————~~|IGSS|—|—|±100|nA|VGS=12V,VDS= 0V|
|**ON CHARACTERISTICS(Note 9) **<br>~~————~~<br>~~GO~~<br>~~(OQ~~|||||||
|Gate Threshold Voltage<br>~~Gs~~|VGS(TH)<br>~~Gs~~|-0.5<br>~~Gs~~<br>~~GO~~|—<br>~~Gs~~<br>~~(OQ~~|-1.4<br>~~Gs~~<br>~~(OQ~~|V<br>~~Gs~~<br>~~(OQ~~|VDS= VGS,ID= -250µA<br>~~Gs~~<br>~~(OQ~~|
|Static Drain-Source On-Resistance<br>~~i~~|RDS(ON)<br>~~i~~|—<br>~~GO~~<br>~~i~~|1.7<br>~~(OQ~~<br>~~i~~|2.2<br>~~(OQ~~<br>~~i~~|mΩ<br>~~(OQ~~<br>~~i~~<br>~~GO~~|VGS= -10V,ID= -25A<br>~~(OQ~~<br>~~i~~|
|||—<br>~~i~~|1.9<br>~~i~~|2.55<br>~~i~~||VGS= -4.5V,ID= -20A<br>~~i~~|
|||—<br>~~i~~|2.5<br>~~i~~<br>~~GO~~|4.0<br>~~i~~<br>~~GO~~||VGS= -2.5V,ID= -15A<br>~~i~~<br>~~(~~|
|Diode Forward Voltage<br>~~GG~~|VSD<br>~~GG~~|—<br>~~GG~~|-0.6<br>~~GG~~<br>~~GO~~|-1.1<br>~~GG~~<br>~~GO~~|V<br>~~GG~~<br>~~GO~~|VGS= 0V,IS= -5A<br>~~GG~~<br>~~(~~|
|**DYNAMIC CHARACTERISTICS(Note 10)**<br>~~GO~~<br>~~GO (~~<br>~~CO~~<br>~~ee~~|||||||
|Input Capacitance<br>~~CO———~~|Ciss<br>~~———~~<br>~~ee~~|—<br>~~———~~<br>~~ee~~|8352<br>~~———~~|—<br>~~———~~|pF<br>~~———~~|VDS= -10V, VGS= 0V<br>f = 1MHz<br>~~———~~|
|Output Capacitance<br>~~CO———~~|Coss<br>~~———~~<br>~~ee~~|—<br>~~———~~<br>~~ee~~|1406<br>~~———~~|—<br>~~———~~|pF<br>~~———~~||
|Reverse Transfer Capacitance<br>~~———~~|Crss<br>~~———~~<br>~~ee~~|—<br>~~———~~<br>~~ee~~|599<br>~~———~~|—<br>~~———~~|pF<br>~~———~~||
|Gate Resistance<br>~~———~~|Rg<br>~~———~~<br>~~ee~~|—<br>~~———~~<br>~~ee~~|13.2<br>~~———~~|—<br>~~———~~|Ω<br>~~———~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~———~~|
|Total Gate Charge(VGS= -4.5V)<br>~~a~~|Qg<br>~~ee~~<br>~~a~~|—<br>~~ee~~<br>~~a~~|79<br>~~a~~|—<br>~~a~~|nC<br>~~a~~|VDS= -10V, ID= -20A<br>~~ee~~|
|Total Gate Charge(VGS= -10V)<br>~~|~~|Qg<br>~~|~~|—<br>~~|~~|177<br>~~|~~|—<br>~~|~~|nC<br>~~|~~||
|Gate-Source Charge|Qgs|—|14.3|—|nC||
|Gate-Drain Charge<br>~~—<_—~~|Qgd|—|19.8|—<br>~~ee~~|nC<br>~~ee~~||
|Turn-On DelayTime<br>~~—<_—~~|tD(ON)|—|7.8|—<br>~~ee~~|ns<br>~~ee~~|VDD= -10V, VGEN= -4.5V,<br>RGEN= 1Ω, ID= -10A<br>~~ee~~|
|Turn-On Rise Time<br>~~—<_—~~|tR|—|4.9|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off DelayTime<br>~~—<_—~~|tD(OFF)|—|377|—<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~||
|Turn-Off Fall Time<br>~~—<_—~~|tF|—|189|—<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~||
|Reverse RecoveryTime<br>~~—<_—~~<br>~~eS~~|tRR<br>~~eS~~|—<br>~~eS~~|49<br>~~eS~~|—<br>~~ee~~<br>~~eS~~<br>~~ee~~|ns<br>~~ee~~<br>~~eS~~<br>~~ee~~|IF= -10A, di/dt = 100A/µs<br>~~ee~~<br>~~eS~~|
|Reverse RecoveryCharge<br>~~eS~~|QRR<br>~~eS~~|—<br>~~eS~~|39<br>~~eS~~|—<br>~~eS~~<br>~~ee~~|nC<br>~~eS~~<br>~~ee~~||



6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 

7. Thermal resistance from junction to soldering point (on the exposed drain pad). 

8. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 

9. Short duration pulse test used to minimize self-heating effect. 

10. Guaranteed by design. Not subject to product testing. 

2 of 7 **www.diodes.com** 

DMP2003UPS Document number: DS39597  Rev. 2 - 2 

October 2017 © Diodes Incorporated 

**DMP2003UPS** 

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50.0  30<br>VGS = -10V<br>VDS= -5V<br>40.0  po VGS = -4.5V o 25 ee |||<br>VGS = -4.0V<br>VGS = -3.5V 20<br>30.0  VGS = -3.0V<br>VGS = -2.5V VGS = -2.0V 15<br>20.0  1 Sa n na eee<br>10<br>VGS = -1.8V TJ= 150 ℃ TJ= 85 ℃<br>[<br>10.0  VGS = -1.3V VGS = -1.5V 5 TJ= 125 ℃ TJ= 25 ℃<br>TJ=-55 ℃<br>0.0  0<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 0.5 1 1.5 2 2.5<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 2. Typical Transfer Characteristic<br>Figure 1.Typical Output Characteristic<br>0.01<br>0.004<br>0.009 ID = -15A<br>0.0035 0.008 ID = -20A<br>ID = -25A<br>0.003 CCCPTTT TTT 0.007 e c E e<br>0.0025 VGS = -2.5V 0.006<br>0.002 VGS = -4.5V 0.005<br>0.004<br>0.0015<br>0.003<br>VGS = -10V<br>0.001 0.002<br>TS GeFAR<br>0.0005 0.001<br>PH 0 EEE<br>0<br>0 2 4 6 8 10 12<br>0 5 10 15 20 25 30 35 40 45 50<br>VGS, GATE-SOURCE VOLTAGE (V)<br>ID, DRAIN-SOURCE CURRENT (A)  Figure 4. Typical Transfer Characteristic<br>Figure 3. Typical On-Resistance vs. Drain Current and<br>Gate Voltage<br>0.004 1.9<br>VGS= -10V 1.7<br>VGS = -10V, ID = -25A<br>0.003<br>1.5 a<br>TJ= 125 ℃ TJ= 150 ℃ VGS = -4.5V, ID = -20A<br>1.3 a”<br><a<br>0.002<br>TJ= 85 ℃ 1.1 A<br>TJ= 25 ℃ e e VGS = -2.5V, ID = -15A<br>0.9<br>0.001<br>TJ= -55 ℃<br>— T1<br>0.7<br>0 — 0.5 P Eitre t t ttttEET [tt]<br>-50 -25 0 25 50 75 100 125 150<br>0 5 10 15 20 25 30<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 5. Typical On-Resistance vs. Drain Current  Figure 6. On-Resistance Variation with Junction<br>and Junction Temperature Temperature<br>, DRAIN CURRENT (A)<br>ID , DRAIN CURRENT (A)<br>ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>DS(ON) R<br>R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω) , DRAIN-SOURCE ON-RESISTANCE<br>DS(ON) DS(ON)<br>R R<br>**----- End of picture text -----**<br>


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**DMP2003UPS** 

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0.005 1.2<br>1<br>0.004<br>ERE PT TTT TTT<br>0.8<br>0.003 ' VGS = -2.5V, ID = -15A CL S e ID = -1mA<br>0.6<br>0.002 / T oe !_ ID = -250μA e<br>a 0.4 =:<br>VGS = -10V, ID = -25A<br>0.001<br>VGS = -4.5V, ID = -20A 0.2<br>= S S<br>0 an 0 PE} TEE LIS<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ( ℃ ) TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 7. On-Resistance Variation with Junction  Figure 8. Gate Threshold Variation vs. Junction<br>Temperature Temperature<br>30 100000<br>VGS = 0VGS = 0V= 0V f=1MHz<br>25 ee | | ee =<br>20 10000  Ciss<br>15<br>AP SaaS Coss ooae<br>10 | TJ= 85J= 85= 85 ℃ 1000  CER SEE Crss EEE<br>TJ= 150J= 150= 150 ℃<br>5 TJ= 25J= 25= 25 ℃<br>TJ= 125J= 125= 125 ℃<br>— iy TJ= -55J= -55= -55 ℃ SSSS= =<br>0 WD 100  HEPEEEEEEA =<br>0 0.3 0.6 0.9 1.2 0 2 4 6 8 10 12 14 16 18 20<br>VSD, SOURCE-DRAIN VOLTAGE (V)SD, SOURCE-DRAIN VOLTAGE (V), SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance<br>10 1000<br>R LIMITED<br>DS(ON)<br>9<br>PW=1µs<br>8<br>7<br>100<br>6<br>PW=10µs<br>5 VA PW=100µs  QOS KET<br>4 VDS = -10V, ID = -20ADS = -10V, ID = -20A= -10V, ID = -20AD = -20A= -20A PW=1ms<br>3 10 TTJ(MAX)C=25 ℃ =150 ℃ PW=10ms<br>2 Single PulseDUT on infinite  PW=100ms<br>heatsink PW=1s<br>1<br>VGS= -10V<br>0 ARGeneeee 1 EEL wi EE<br>0.1 1 10 100<br>0 20 40 60 80 100 120 140 160 180 200<br>Qg (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 12. SOA, Safe Operation Area<br>, GATE THRESHOLD VOLTAGE (V)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>GS(TH)<br>V<br>DS(ON)<br>R<br>, SOURCE CURRENT (A)<br>ISS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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30<br>VGS = 0VGS = 0V= 0V<br>25 ee | | ee<br>20<br>15<br>AP<br>10 | TJ= 85J= 85= 85 ℃<br>TJ= 150J= 150= 150 ℃<br>TJ= 25J= 25= 25 ℃<br>5<br>TJ= 125J= 125= 125 ℃<br>— iy TJ= -55J= -55= -55 ℃<br>WD<br>0<br>0 0.3 0.6 0.9 1.2<br>VSD, SOURCE-DRAIN VOLTAGE (V)SD, SOURCE-DRAIN VOLTAGE (V), SOURCE-DRAIN VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current<br>10<br>9<br>8<br>7<br>6<br>5 VA<br>4 VDS = -10V, ID = -20ADS = -10V, ID = -20A= -10V, ID = -20AD = -20A= -20A<br>3<br>2<br>1<br>0 ARGeneeee<br>0 20 40 60 80 100 120 140 160 180 200<br>Qg (nC)<br>Figure 11. Gate Charge<br>, SOURCE CURRENT (A)<br>ISS<br> (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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DMP2003UPS Document number: DS39597  Rev. 2 - 2 

October 2017 © Diodes Incorporated 

**DMP2003UPS** 

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1 S5958 SSSSS<br>eater<br>D=0.9<br>D=0.5 oa 0<br>RT [aaa] ae<br>US D=0.7 |<br>D=0.3 AI |<br>| I ea PULTETET ET<br>0.1 ML<br>Ee D=0.1 eee aez eet fa eeAne a eee LUIeeeeLTT<br>eee) eT ll<br>D=0.05<br>PT OA TTT TTT<br>AT ETE TTI TTI PTE PET<br>pt 1 7 AN<br>D=0.02<br>0.01<br>vetaea a > Ya 7ee enIIE eeINE eeeIE<br>a = a ee ee<br>N AT D=0.01 E1 ee mn<br>Br. D=0.005 CA TTT TPT RRθJCθJC(t) = r(t) * R= 1.5 ℃ /W θJC mi<br>D=Single Pulse Duty Cycle, D = t1 / t2<br>0.001<br>1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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DMP2003UPS Document number: DS39597  Rev. 2 - 2 

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**DMP2003UPS** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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PowerDI5060-8<br>D<br>D1 Detail A PowerDI5060-8<br>O (4X) Dim  Min  Max  Typ<br>A  0.90 1.10 1.00<br>—-  EEEE A1  0.00  0.05  <br>c<br>A1 b  0.33 0.51  0.41<br>b2  0.200 0.350 0.273<br>E1 E b3 0.40 0.80 0.60<br>=== c  0.230 0.330 0.277<br>e D  5.15 BSC<br>D1  4.70 5.10 4.90<br>D2  3.70 4.10 3.90<br>1 O (4X) D3 3.90 4.30 4.10<br>E  6.15 BSC<br>E1  5.60 6.00 5.80<br>b (8X) e/2 E2  3.28 3.68 3.48<br>1 E3  3.99 4.39 4.19<br>L b2 (4X) e  1.27 BSC<br>G 0.51  0.71  0.61<br>D3 K K  0.51  <br>L  0.51  0.71  0.61<br>L1  0.100 0.200 0.175<br>A<br>E3 oa E2 el D2 b3 (4X) ——— M  3.235 4.035 3.635<br>M M1  1.00 1.40 1.21<br>Θ  10°  12°  11°<br>M1<br>Detail A Θ1  6°  8°  7°<br>All Dimensions in mm<br>G L1<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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PowerDI5060-8<br>**----- End of picture text -----**<br>


**==> picture [403 x 197] intentionally omitted <==**

**----- Start of picture text -----**<br>
X4<br>Y2<br>X3 Dimensions  Value (in mm)<br>te r C  1.270<br>Y3 Y1 G  0.660<br>G1  0.820<br>X  0.610<br>X1  4.100<br>X2  0.755<br>Y5 X2 X3  4.420<br>Y4 X1 X4  5.610<br>Y7 Y  1.270<br>Y1  0.600<br>Y2  1.020<br>C G1 Y3  0.295<br>Y6 fo Y4  1.825<br>Y5  3.810<br>Y6  0.180<br>Y7  6.610<br>Y(4x)<br>og X g: G<br>**----- End of picture text -----**<br>


6 of 7 **www.diodes.com** 

DMP2003UPS Document number: DS39597  Rev. 2 - 2 

October 2017 © Diodes Incorporated 

**DMP2003UPS** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A.   Life support devices or systems are devices or systems which: 

1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2017, Diodes Incorporated 

**www.diodes.com** 

7 of 7 **www.diodes.com** 

DMP2003UPS Document number: DS39597  Rev. 2 - 2 

October 2017 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMP2003UPS-13/power-mosfet-p-channel-20-v-150-a-2200-ohm-powerdi)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmp2003ups-13/mosfet-p-ch-20v-150a-powerdi-5060/dp/4318565)
---

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