# Power MOSFET, P Channel, 20 V, 60 A, 1300 µohm, PowerDI 5060, Surface Mount

![Product image](https://novapart.co/image/farnell:3943700/)

**URL**: https://novapart.co/products/DMP2002UPS-13/power-mosfet-p-channel-20-v-60-a-1300-ohm-powerdi
**SKU**: DMP2002UPS-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.9310
**Stock**: 500+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 104W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PowerDI 5060 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 60A |
| Drain Source On State Resistance | 1300µohm |
| Gate Source Threshold Voltage Max | 1.4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943700/)

**DMP2002UPS** TT 

**20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI** 

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@ Green<br>**----- End of picture text -----**<br>


## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON)**|**ID **<br>**TC = +25°C**|
|-20V|1.9mΩ@VGS= -10V|-60A|
||2.4mΩ@VGS= -4.5V|-60A|
||3.8mΩ@VGS= -2.5V|-60A|



## **Features** 

- Thermally Efficient Package-Cooler Running Applications 

- High Conversion Efficiency 

- Low RDS(ON) – Minimizes On State Losses 

- <1.1mm Package Profile – Ideal for Thin Applications 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Description** 

This new generation P-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch. 

## **Applications** 

- Switch 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Mechanical Data** 

- Case: PowerDI5060-8 (Type K) 

- Case Material: Molded Plastic, ―Green‖ Molding Compound; UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal Finish - Matte Tin Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208 

- Weight: 0.097 grams (Approximate) 

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PowerDI5060-8 (Type K)<br>Pin1<br>Top View  Bottom View<br>**----- End of picture text -----**<br>


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D<br>S D<br>S D<br>G S D<br>G D<br>S<br>Internal Schematic  Top View<br>Pin Configuration<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMP2002UPS-13|PowerDI5060-8(Type K)|2,500 / Tape & Reel|



Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

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PowerDI5060-8 (Type K)<br>D D D D<br>P2002US<br>YY WW<br>S S S G<br>**----- End of picture text -----**<br>


= Manufacturer’s Marking P2002US = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 16 = 2016) WW = Week Code (01 to 53) 

PowerDI is a registered trademark of Diodes Incorporated. DMP2002UPS Document number: DS37192  Rev. 5 - 2 

1 of 8 **www.diodes.com** 

July 2016 © Diodes Incorporated 

**DMP2002UPS** Cd 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Units**|
|Drain-Source Voltage|||VDSS|-20|V|
|Gate-Source Voltage<br>~~ee~~|||VGSS<br>~~ee~~|±12<br>~~eee~~|V<br>~~eee~~|
|Continuous Drain Current, VGS= -10V (Note 5)<br>~~ee~~<br>~~le~~|Steady State<br>(Note 8)<br>~~ee~~<br>~~ee~~|TC= +25°C<br>TC= +70°C<br>~~ee~~<br>~~ee~~|ID<br>~~ee~~<br>~~ee~~|-60<br>-60<br>~~ee~~<br>~~eee~~|A<br>~~ee~~<br>~~eee~~|
||t<10s<br>~~Cf~~<br>~~ee~~<br>~~ee~~<br>~~le~~|TA= +25°C<br>TA= +70°C<br>~~Cf~~<br>~~ee~~<br>~~ee~~||-42<br>-33.5<br>~~ee~~<br>~~eee~~|A<br>~~ee~~<br>~~eee~~|
|Pulsed Drain Current (10μs pulse, duty cycle = 1%)<br>~~ee ~~<br>~~le~~|||IDM<br> ~~ee ~~|-100<br> ~~eee~~|A<br>~~eee~~|
|Continuous Body Diode Forward Current (Note 5)<br>~~le~~<br>~~a~~<br>~~Ce~~|Steady State<br>(Note 8)<br>~~le~~|TC= +25°C|IS|-60|A|
||t<10s<br>~~le~~<br>~~a~~<br>|TA= +25°C<br>||-5.6<br>~~a~~<br>~~ee~~|A<br>~~a~~<br>~~ee~~|
|Pulsed Body Diode Forward Current (10μs pulse, duty cycle = 1%)<br>~~le~~<br>~~Ce~~|||ISM<br>~~ee~~|-100<br>~~ee~~<br>~~ee~~|A<br>~~ee~~<br>~~ee~~|
|Avalanche Current, L = 0.1mH<br>~~Ce|~~|||IAS|-37<br>~~ee~~<br>~~|~~|A<br>~~ee~~<br>~~|~~|
|Avalanche Energy, L = 0.1mH<br>~~ee~~|||EAS<br>~~a~~|69.8<br>~~|~~<br>~~a~~|mJ<br>~~|~~|



## **Thermal Characteristics** 

||||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Units**|
|Total Power Dissipation (Note 5)|Steady State|PD|2.3|W|
||t<10s||6.25||
|Thermal Resistance, Junction to Ambient (Note 5)|Steady State|RθJA|55|°C/W|
||t<10s||20||
|Total Power Dissipation (Note 5)|Steady State|PD|104|W|
|Thermal Resistance, Junction to Case (Note 5)||RθJC|0.9|°C/W|
|Operating and Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



PowerDI is a registered trademark of Diodes Incorporated. DMP2002UPS Document number: DS37192  Rev. 5 - 2 

2 of 8 **www.diodes.com** 

July 2016 © Diodes Incorporated 

**DMP2002UPS** 

**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~GO~~|**Symbol**<br>~~GO~~|**Symbol**<br>**Min**<br>~~GO~~|**Typ**<br>~~GO~~|**Max**<br>~~GO~~<br>~~CO~~|**Unit**<br>~~GO~~<br>~~CO~~|**Test Condition**<br>~~GO~~|
|**OFF CHARACTERISTICS (Note 6)**<br>~~CO~~<br>~~pe~~|||||||
|Drain-Source Breakdown Voltage<br>~~a~~|BVDSS|-20<br>~~GO~~|—<br>~~GO~~|—<br>~~GO~~|V<br>~~GO~~|VGS= 0V, ID= -250µA|
|Zero Gate Voltage Drain Current<br>~~a~~|IDSS|—<br>~~GO~~|—<br>~~GO~~|-1<br>~~GO~~|µA<br>~~GO~~|VDS= -20V, VGS= 0V|
|Gate-Source Leakage<br>~~po~~|IGSS<br>~~po~~|—<br>~~po~~|—<br>~~po~~|±100<br>~~po~~|nA<br>~~po~~|VGS=12V, VDS= 0V<br>~~po~~|
|**ON CHARACTERISTICS (Note 6)**<br>~~pe~~|||||||
|Gate Threshold Voltage<br>~~a~~|VGS(TH)|-0.5<br>~~GO~~<br>~~ee~~|—<br>~~GO~~<br>~~ee~~|-1.4<br>~~GO~~|V<br>~~GO~~|VDS= VGS, ID= -250µA<br>~~po~~|
|Static Drain-Source On-Resistance|RDS(ON)|—<br>~~ee~~<br>~~ee~~|1.3<br>~~ee~~<br>~~ee~~|1.9|m|VGS= -10V, ID= -25A<br>~~po~~<br>~~po~~|
|||—<br>~~ee~~<br>~~ee~~<br>~~es~~|1.5<br>~~ee~~<br>~~ee~~<br>~~ee~~|2.4||VGS= -4.5V, ID= -20A<br>~~po~~<br>~~po~~<br>~~pO~~|
|||—<br>~~ee ~~<br>~~es~~|2<br> ~~ee~~<br>~~ee~~|3.8||VGS= -2.5V, ID= -15A<br>~~po~~<br>~~pO~~|
|**DYNAMIC CHARACTERISTICS (Note 7)**<br>~~es~~<br>~~ee~~<br>~~pO~~<br>~~pe~~|||||||
|Input Capacitance<br>~~a~~|Ciss<br>~~a~~|—<br>~~a~~|12826<br>~~a~~|—<br>~~a~~|pF|VDS= -10V, VGS= 0V<br>f = 1MHz|
|Output Capacitance<br>~~a~~|Coss<br>~~a~~|—<br>~~a~~|2547<br>~~a~~|—<br>~~a~~|||
|Reverse Transfer Capacitance<br>~~po~~|Crss<br>~~po~~|—<br>~~po~~|1924<br>~~po~~|—<br>~~po~~|||
|Gate Resistance<br>~~pT~~|RG<br>~~pT~~|0.9<br>~~pT~~|4.2<br>~~pT~~|6.6<br>~~pT~~|<br>~~pT~~|VDS= 0V, VGS= 0V, f = 1MHz<br>~~pT~~|
|Total Gate Charge(VGS= -10V)<br>~~a~~|Qg<br>~~a~~|—<br>~~a~~|476<br>~~a~~|585<br>~~a~~|nC|VDS= -10V, ID= -20A|
|Total Gate Charge(VGS= -4.5V)<br>~~a~~|Qg<br>~~a~~|—<br>~~a~~|228<br>~~a~~|282<br>~~a~~|||
|Gate-Source Charge<br>~~po~~|Qgs<br>~~po~~|—<br>~~po~~|24.8<br>~~po~~|—<br>~~po~~|||
|Gate-Drain Charge<br>~~a~~|Qgd<br>~~a~~|—<br>~~a~~|61.9<br>~~a~~|—<br>~~a~~|||
|Turn-On Delay Time<br>~~a~~|tD(ON)<br>~~a~~|—<br>~~a~~|14.2<br>~~a~~|28<br>~~a~~|ns|VDD= -10V, VGEN= -4.5V,<br>RGEN= 1Ω, ID= -10A|
|Turn-On Rise Time<br>~~a~~|tR<br>~~a~~|—<br>~~a~~|35.4<br>~~a~~|70<br>~~a~~|||
|Turn-Off Delay Time<br>~~po~~|tD(OFF)<br>~~po~~|—<br>~~po~~|361<br>~~po~~|578<br>~~po~~|||
|Turn-Off Fall Time<br>~~a~~|tF<br>~~a~~|—<br>~~a~~|224<br>~~a~~|358<br>~~a~~|||
|**BODY DIODE CHARACTERISTICS**<br>~~Pe~~|||||||
|Continuous Body Diode Forward Current (Notes 5 & 8)<br>~~a~~<br>~~po~~|IS|—<br>~~GO~~|—<br>~~GO ~~|-60<br> ~~(OO~~|A<br>~~(OO~~|TC= +25°C<br>~~(OO~~|
|Diode Forward Voltage<br>~~po~~|VSD|—|-0.58|-1.1|V|VGS= 0V, IS= -5A|
|Reverse Recovery Time (Note 7)<br>~~po~~<br>~~a~~|tRR<br>~~a~~|—<br>~~a~~|137<br>~~a~~|219<br>~~a~~|ns<br>~~a~~|IF= -10A, di/dt = 100A/µs|
|Reverse Recovery Charge (Note 7)<br>~~a~~<br>~~ReverseRecoveryalltime~~<br>~~|~~|QRR<br>~~a~~<br>~~|~~<br>~~|~~|—<br>~~a~~<br>~~TT~~|221<br>~~a~~<br>~~TT~~|332<br>~~a~~<br>~~TT~~|nC<br>~~a~~||
|(Note 7)<br>~~ReverseRecoveryalltime~~<br>~~|~~|tA<br>~~|~~<br>~~|~~|—<br>~~TT~~|39<br>~~TT~~|—<br>~~TT~~|ns||
|(Note 7)<br>~~Reverse Recovery alltime~~<br>~~|~~<br>~~a~~|tB<br>~~|~~<br>~~|~~<br>~~a~~|—<br>~~TT~~|98<br>~~TT~~|—<br>~~TT~~|||



- Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. 

   8. Package limited. 

PowerDI is a registered trademark of Diodes Incorporated. DMP2002UPS Document number: DS37192  Rev. 5 - 2 

3 of 8 **www.diodes.com** 

July 2016 © Diodes Incorporated 

**DMP2002UPS** 

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30.0  30<br>VGS = -4.5V VDS = -5V<br>25.0  EL VGS = -1.4V 25<br>20.0  20<br>ar VGS = -2.0V ene  |e<br>15.0  VGS = -1.5V 15<br>150 [o] C<br>10.0  peeen VGS = -1.3V 10 e ee ine<br>_aeenee ee 125 [o] C ine<br>25 [o] C<br>5.0  seeeeeee 5 e” ) /,<br>85 [o] C ae<br>VGS = -1.2V -55 [o] C<br>0.0  aaa) 0<br>0 0.5 1 1.5 2 2.5 3 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic Figure 2. Typical Transfer Characteristic<br>0.0024 0.01<br>0.009<br>0.0022 ——— 0.008 2 eee<br>VGS = -2.5V 0.007<br>0.002 Ht 0.006 fo<br>0.005<br>0.0018 0.004<br>CET) A<br>VGS = -4.5V 0.003 ID = -25A<br>ID = -20A<br>0.0016 T FT = 0.002 A RE<br>VGS = -10V 0.001<br>ID = -15A<br>0.0014 0 Er r,<br>PTT [yi] aoe7<br>2 6 10 14 18 22 26 30 0 2 4 6 8 10 12<br>ID, DRAIN-SOURCE CURRENT (A)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs. Drain Current  Figure 4. Typical Transfer Characteristic<br>and Gate Voltage<br>0.0024 1.6<br>150 [o] C VGS = -4.5V<br>0.0022 VGS = -2.5V, ID = -15A<br>1.4<br>ee ee ee KZ<br>0.002 pan 125 [o] C e ee Eee VGS = -4.5V, ID = -20A<br>1.2<br>0.0018 SS 85 [o] C E OL<br>0.0016<br>1<br>VGS = -10V, ID = -25A<br>0.0014 a 25 [o] C<br>0.8<br>0.0012 Pf<br>ft | YO<br>-55 [o] C<br>0.001 0.6<br>spr. ttl 6 ELLLI IIT<br>0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT(A) TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 5. Typical On-Resistance vs. Drain Current  Figure 6. On-Resistance Variation with<br>and Temperature Temperature<br>, DRAIN CURRENT (A)<br>ID , DRAIN CURRENT (A)ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>DS(ON) R<br>R<br>,  DRAIN-SOURCE<br>(NORMALIZED)<br>DS(ON)ON-RESISTANCE (Ω)<br>R<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


PowerDI is a registered trademark of Diodes Incorporated. DMP2002UPS Document number: DS37192  Rev. 5 - 2 

4 of 8 **www.diodes.com** 

July 2016 © Diodes Incorporated 

**DMP2002UPS** 

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0.0034 1<br>0.003<br>VGS = -2.5V, ID = -15A 0.8<br>0.0026<br>roa 0.6 R E ID = -1mA<br>0.0022<br>Oe<br>0.4 ID = -250µA<br>0.0018<br>0.0014 ee VGS = -10V, ID = -25A 0.2 aN<br>VGS = -4.5V, ID = -20A<br>0.001 a 0 Tit LLL<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ( ℃ ) TA, AMBIENT TEMPERATURE ( ℃ )<br>Figure 8. Gate Threshold Variation vs Ambient<br>Figure 7. On-Resistance Variation with Temperature<br>Temperature<br>30 100000<br>f = 1MHz<br>25 VGS = 0V<br>20 | FT a<br>Ciss<br>15 TA = 150 [o] C 10000<br>10<br>TA = 125 [o] C TA = 25 [o] C Coss<br>5 TA = 85 [o] C<br>TA = -55 [o] C Crss<br>LK =<br>0 1000<br>0 0.2 0.4 0.6 0.8 1 0 4 8 12 16 20<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance<br>10 1000<br>R<br>DS(ON)<br>Limited<br>8<br>100<br>6 VDS = -10V, ID = -20A PW = 1s<br>PW = 100ms<br>PW = 10ms<br>4 PW = 1ms<br>10<br>PW = 100µs<br>TJ(Max) = 150 ℃<br>2 TC = 25 ℃ PW = 10µs<br>VGS = -10V PW = 1µs<br>Single Pulse<br>DUT on Infinite Heatsink<br>0 MmOLLEELEL 1 tt<br>0 50 100 150 200 250 300 350 400 450 500 0.1 1 10 100<br>Qg (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. Gate Charge Figure 12. SOA, Safe Operation Area<br>(Ω)<br>, DRAIN-SOURCE ON-RESISTANCE  , GATE THRESHOLD VOLTAGE (V)<br>DS(ON) GS(TH)<br>R V<br>, SOURCE CURRENT (A)<br>IS , JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


PowerDI is a registered trademark of Diodes Incorporated. DMP2002UPS Document number: DS37192  Rev. 5 - 2 

5 of 8 **www.diodes.com** 

July 2016 © Diodes Incorporated 

**DMP2002UPS** fs 

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1<br>5 a ne i<br>ee a<br>SIC D = 0.5 a NH D = 0.9 aHE PT<br>D = 0.3 ee7 ee eee ellllll D = 0.7 UT |<br>0.1 PN em Qn | | |<br>aria D = 0.1 CC|arg MTBearersnTcers ere ieee eerie<br>LITE Tg<br>D = 0.05<br>p o<br>se a AU<br>D = 0.02<br>0.01 paneiaye”A AIIMttETI TINT CATT IE TUT TUT<br>oe: A<br>Seen EHS<br>PART D = 0.01 a ee a<br>RθJC(t) = r(t) * RθJC<br>ms D = 0.005 N a RθJC = 0.9 [o] C/W ell<br>Duty Cycle, D = t1/t2<br>D = Single Pulse<br>0.001<br>1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


PowerDI is a registered trademark of Diodes Incorporated. DMP2002UPS Document number: DS37192  Rev. 5 - 2 

6 of 8 **www.diodes.com** 

July 2016 

© Diodes Incorporated 

**DMP2002UPS** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**PowerDI5060-8 (Type K)** 

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||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|
|D|
|D1|PowerDI5060-8|
|0|(4x)|PF|(Type K)|
|Dim|Min|Max|Typ|
|A|0.90|1.10|1.00|
|x|c|A1|A1|0|0.05|0.02|
|b|0.33|0.51|0.41|
|E1|E|
|b1|0.300|0.366|0.333|
|y|Seating Plane|b2|0.20|0.35|0.25|
|e|c|0.23|0.33|0.277|
|C|D|5.15 BSC|
|D1|4.85|4.95|4.90|
|1|Ø|1.000 Depth 0.07±|0.030|0|1(4x)|D2 E|-|6.15 B-|SC|3.98|
|E1|5.75|5.85|5.80|
|b1(8x)|DETAIL A|
|E2|3.56|3.725|3.66|
|b(8x)|e/2|
|E|1.27BSC|
|1|k|-|-|1.27|
|L|L|0.51|0.71|0.61|
|D2|La|0.51|0.675|0.61|
|k|b2(2x)|L1|0.05|0.20|0.175|
|L4|-|-|0.125|
|M|3.50|3.71|3.605|
|L4|
|E2|A|x|-|-|1.400|
|M|y|-|-|1.900|
|θ|10°|12°|11°|
|DETAIL A|θ1|6°|8°|7°|
|All Dimensions in mm|
|La|L1|

**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**PowerDI5060-8 (Type K)** 

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**----- Start of picture text -----**<br>
X2<br>Y1<br>Y2<br>Y3<br>G1 X1<br>Y C X (8x)<br>G<br>**----- End of picture text -----**<br>


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|||
|---|---|
|Value|
|Dimensions|
|(in mm)|
|C|1.270|
|G|0.660|
|G1|0.820|
|X|0.610|
|X1|3.910|
|X2|4.420|
|Y|1.270|
|Y1|1.020|
|Y2|3.810|
|Y3|6.610|

**----- End of picture text -----**<br>


PowerDI is a registered trademark of Diodes Incorporated. DMP2002UPS Document number: DS37192  Rev. 5 - 2 

7 of 8 **www.diodes.com** 

July 2016 © Diodes Incorporated 

**DMP2002UPS** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2016, Diodes Incorporated 

**www.diodes.com** 

PowerDI is a registered trademark of Diodes Incorporated. DMP2002UPS Document number: DS37192  Rev. 5 - 2 

8 of 8 **www.diodes.com** 

July 2016 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMP2002UPS-13/power-mosfet-p-channel-20-v-60-a-1300-ohm-powerdi)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmp2002ups-13/mosfet-p-ch-20v-60a-powerdi-5060/dp/3943700)
---

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