# Power MOSFET, P Channel, 12 V, 6.6 A, 0.025 ohm, X1-DFN1616, Surface Mount

![Product image](https://novapart.co/image/farnell:3943698/)

**URL**: https://novapart.co/products/DMP1245UFCL-7/power-mosfet-p-channel-12-v-66-a-0025-ohm-x1
**SKU**: DMP1245UFCL-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1920
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 613mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | X1-DFN1616 |
| Drain Source Voltage Vds | 12V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 6.6A |
| Drain Source On State Resistance | 0.025ohm |
| Gate Source Threshold Voltage Max | 600mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943698/)

**DMP1245UFCL 12V P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Summary** 

|**Summaryy**|**Summaryy**|**Summaryy**|
|---|---|---|
||||
|**V(BR)DSS**|**RDS(on)max**|**ID max**|
|-12V|29mΩ @VGS= -4.5V|-6.6 A|
||45mΩ @VGS= -2.5V|-5.3 A|
||60mΩ @VGS= -1.8V|-4.6 A|
||100mΩ @VGS= -1.5V|-3.5 A|



## **Features and Benefits** 

- Typical off board profile of 0.5mm ideally suited for thin applications 

- Low RDS(ON) minimizes conduction losses 

- PCB footprint of 2.56mm[2] 

- **3kV ESD Protected Gate – protection against human borne ESD** 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Applications** 

This device provides high performance, low RDS(ON)  P Channel MOSFETs in the thermally and space efficient X1-DFN1616-6 package. The low  RDS(ON)  of this MOSFET ensures conduction losses are kept making it ideal for use as a: 

- Battery Disconnect Switch 

- Load Switch for Power Management Functions 

## **Mechanical Data** 

- Case: X1-DFN1616-6 

- Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Lead Free Plating (NiPdAu Finish over Copper Leadframe) 

- Terminals: Solderable per MIL-STD-202, Method 208 © **e4** 

- Weight: 0.04 grams (Approximate) 

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ESD PROTECTED TO 3kV<br>**----- End of picture text -----**<br>


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X1-DFN1616-6<br>f Pin 1<br>a<br>Top View  Bottom View<br>**----- End of picture text -----**<br>


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D<br>Ne<br>G<br>Po<br>Gate Protection Diode S Ss<br>Top View<br>Device symbol<br>Pin-Out<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|
|---|---|---|---|---|
||||||
|**Product**|**Marking**|**Reel size(inches)**|**Tape width(mm)**|**Quantity per reel**|
|DMP1245UFCL-7|P5|7|8|3,000|



Notes: 

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html. 

## **Marking Information** 

X1-DFN1616-6 

P5 = Product Type Marking Code **P5** YM = Date Code Marking Y = Year (ex: Y = 2011) **YM** M = Month (ex: 9 = September) 

Date Code Key 

|Code KeyKeyey||||||||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**Year**|**2011**||**….**|||**2014**||||**2015**|||**2016**|**2017**||**2018**||||**2019**||||**2020**|||**2021**|
|**Code**|Y||**….**|||B|||||C||D|E||F||||G|||||H||I|
|||||||||||||||||||||||||||||
|**Month**|**Jan**||**Feb**|**Mar**||||**Apr**|||**May**||**Jun**|**Jul**||**Aug**||**Sep**||||**Oct**|||**Nov**||**Dec**|
|**Code**|1||2||3|||4|||5||6|7||8|||9|||O|O||N||D|



1 of 7 **www.diodes.com** 

DMP1245UFCL Document number: DS35505  Rev. 2 - 2 

March 2015 © Diodes Incorporated 

**DMP1245UFCL** 

**Maximum Ratings** (@TA = +25°C unless otherwise specified.) 

||||
|---|---|---|
|**Characteristic**|**Symbol**<br>**Value**|**Value**<br>**Units**|
|Drain-Source Voltage|VDSS<br>-12|V|
|Gate-Source Voltage|VGSS<br>±8|V|
|Continuous Drain Current (Note 6)<br>@TA= +25°C<br>@TA= +70°C|ID<br>-6.6<br>-5.25|-5.25<br>A|
|Pulsed Drain Current<br>TP= 10µs|IDM<br>-16.67|-16.67<br>A|



## **Thermal Characteristics** (@TA = +25°C unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|(@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)||
|---|---|---|---|
|**Characteristic**||**Symbol**<br>**Value**|**Value**<br>**Units**|
|Total Power Dissipation<br>(Note 5<br>(Note 6|Note 5)|PD<br>613<br>1.7|mW|
||Note 6)||W|
|Thermal Resistance, Junction to Ambient<br>(Note 5<br>(Note|Note 5)|RJA<br>204<br>74|°C/W|
||ote 6)|||
|Operatingand Storage Temperature Range||TJ,TSTG<br>-55 to +150|-55 to +150<br>°C|



Notes:            5. For a device surface mounted on minimum recommended pad layout, in still air conditions; the device is measured when operating in a steady state condition. 

6. For a device surface mounted on 25mm by 25mm by 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is measured when operating in a steady state condition. 

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100 100 ee<br>Single Pulse RDS(ON) ID(A) @<br>90 A TAT RJA=205 ° C/W | Limited aa PW=10µs |<br>| RJA(t)=RJA*r(t) Ht tt H<br>80 T J -T A =P*R JA  (t) LT Htpueuwws,SN |<br>10<br>70 A | IN TT TT AY<br>Pt TT TTT Ts AINAONG PRET TT)<br>60 ee EHR, ANGER EE<br>50 ee A 1 ptSAN TTT ID(A) @ DC   ARAN > | NIHCTTER<br>| eee S|) Il<br>ID(A) @PW=10s<br>40 INTIMATE 1  TATA A LfSeo| | ttt NNRSNSB NUT<br>30 \ \ ! iLt I DID (A) @P (A) @PWW =1s =100ms SRAZYQOWANANERTTT<br>0.1<br>2010 maiSANT:NTT ATE TTTTAIT ATT TTTA a TTJ(MAX)  A  = 25 a = 150C C adsPTT)aeEEFee ID(A) @P tren W=10ms INa eeeeeeees<br>Single Pulse<br>0 PTS DiceTTT TUTE ETT oot ECCIeTLC<br>0.0001 0.001 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100<br>t1, PULSE DURATION TIME (sec) -VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 1  Single Pulse Maximum Power Dissipation Fig. 2 SOA, Safe Operation Area<br>1 rn<br>a— |<br>TRTTTlemme | TTT TT TT<br>—n)@ 0-05 PN @0=0.7 AA aet<br>il pT<br>eee THIN sem CTTCITC<br>a FA<br>0.1 Feber)_ asaeeY/N |<br>a<br>“r() @ D=0.05 20<br>Cera<br>eee wens ytl CT Cr eC<br>0.01 ja A A 0 0 A) 2 a OO ee ee ee ee<br>| Pert 7 Teyt<br>Fococert (SeeAT Tee<br>rt) ey ae ee ee |<br>@ D=0.0052 R JA (t)=r(t) * R JA |<br>PIE er rin CAI CPPCC R JA = 205°C/W i<br>Duty Cycle, D=t1/ t2<br>0.001<br>jvesrtcmm TITHE | TIT LINN LEI LI |<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIMES (sec)<br>Fig. 03 Transient Thermal Resistance<br>2 of 7<br>I<br>D(A) @P<br>I W<br>D =1ms<br>(A) @P<br>W=100µs<br>, DRAIN CURRENT (A)<br>ID<br>P(pk), PEAK TRANSIENT POWER (W)<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


DMP1245UFCL Document number: DS35505  Rev. 2 - 2 

March 2015 © Diodes Incorporated 

**www.diodes.com** 

**DMP1245UFCL** 

## **Electrical Characteristics** (@TA = +25°C unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|(@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|(@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|(@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|||||
|---|---|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**||
|**OFF CHARACTERISTICS(Note 7) **||||||||
|Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~|-12<br>~~ee~~|<br>~~ee~~|<br>~~ee~~|V<br>~~ee~~|VGS= 0V,ID= -250µA<br>~~ee~~||
|Zero Gate Voltage Drain Current TJ= +25°C<br>~~ee~~|IDSS<br>~~ee~~|<br>~~ee~~|<br>~~ee~~|-1<br>~~ee~~|µA<br>~~ee~~|VDS= -12.0V,VGS= 0V<br>~~ee~~||
|Gate-Source Leakage<br>~~ee~~|IGSS<br>~~ee~~|<br>~~ee~~|<br>~~ee~~|10<br>~~ee~~|µA<br>~~ee~~|VGS=8.0V,VDS= 0V<br>~~ee~~||
|**ON CHARACTERISTICS(Note 7) **<br>~~ee~~||||||||
|Gate Threshold Voltage<br>~~ee~~|VGS(th)<br>~~ee~~|-0.3<br>~~ee~~|-0.6<br>~~ee~~|-0.95<br>~~ee~~|V<br>~~ee~~|VDS= VGS,ID= -250µA<br>~~ee~~||
|Static Drain-Source On-Resistance<br>~~ee~~|RDS (ON)<br>~~ee~~|<br>~~ee~~|25<br>~~ee~~|29<br>~~ee~~|mΩ<br>~~ee~~<br>~~ee~~|VGS= -4.5V,ID= - 4A<br>~~ee~~||
|||<br>~~ee~~|31<br>~~ee~~|45<br>~~ee~~||VGS= -2.5V,ID= - 3.5A<br>~~ee~~||
|||<br>~~ee~~<br>~~ee~~|40<br>~~ee~~<br>~~ee~~|60<br>~~ee~~<br>~~ee~~||VGS= -1.8V,ID= - 1A<br>~~ee~~<br>~~Pr~~||
|||<br>~~ee~~<br>~~ee~~|60<br>~~ee~~<br>~~ee~~|100<br>~~ee~~<br>~~ee~~||VGS= -1.5 V,ID= - 0.5A<br>~~ee~~<br>~~Pr~~||
|Forward Transfer Admittance<br>~~a~~||Yfs|<br>~~a~~|0.4<br>~~ee~~<br>~~a~~|3<br>~~ee~~<br>~~a~~|-<br>~~ee~~<br>~~a~~|S<br>~~ee~~<br>~~a~~|VDS= -5V,ID= -2A<br>~~Pr~~<br>~~a~~||
|Diode Forward Voltage<br>~~a~~|VSD<br>~~a~~|-<br>~~a~~|-<br>~~a~~|-1.0<br>~~a~~|V<br>~~a~~|VGS= 0V,ID= -2A<br>~~a~~||
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~a~~||||||||
|Input Capacitance<br>~~a~~|Ciss<br>~~a~~|-<br>~~a~~|1357.4<br>~~a~~|-<br>~~a~~|pF<br>~~a~~|VDS= -10V, VGS= 0V<br>f = 1.0MHz<br>~~a~~||
|Output Capacitance<br>~~a~~|Coss<br>~~a~~|-<br>~~a~~|499<br>~~a~~|-<br>~~a~~|pF<br>~~a~~|||
|Reverse Transfer Capacitance|Crss|-|273.6|-|pF|||
|Gate Resistance|Rg|-|14.26|-|Ω|VDS= 0V,VGS= 0V,f = 1MHz||
|Total Gate Charge<br>~~a~~|Qg<br>~~a~~|-<br>~~a~~|16.1<br>~~a~~|-<br>~~a~~|nC<br>~~a~~|VGS= -4.5V<br>~~a~~|ID= -1A,<br>VDS= -10V<br>~~a~~<br>~~ee~~|
|||-<br>~~a~~|26.1<br>~~a~~|-<br>~~a~~|nC<br>~~a~~|VGS= -8V<br>~~a~~<br>~~ee~~||
|Gate-Source Charge|Qgs|-|1.71|-|nC|||
|Gate-Drain Charge<br>~~—————~~|Qgd|-|20.48|-<br>~~ee~~|nC<br>~~ee~~|||
|Turn-On DelayTime<br>~~—————~~|tD(on)|-|15.2|-<br>~~ee~~|ns<br>~~ee~~|VGS= -2.5V, VDS= -10V<br>ID= -180mA, RG= 2.0Ω,<br>~~ee~~||
|Turn-On Rise Time<br>~~—————~~|tr|-|33.11|-<br>~~ee~~|ns<br>~~ee~~|||
|Turn-Off DelayTime<br>~~—————~~|tD(off)|-|219.4|-<br>~~ee~~|ns<br>~~ee~~|||
|Turn-Off Fall Time<br>~~—————~~|tf|-|217.64|-<br>~~ee~~|ns<br>~~ee~~|||



Notes: 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 

3 of 7 **www.diodes.com** 

DMP1245UFCL Document number: DS35505  Rev. 2 - 2 

March 2015 © Diodes Incorporated 

**DMP1245UFCL** 

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20 20<br>V GS = 2.0V VGS = 1.8V<br>16 a Saecene 16 oy<br>| a se<br>VGS = 2.5V<br>12 | V GS  = 1.5V 12 a a<br>V GS  = 4.5V<br>{ 1S a<br>8 8<br>V GS = 1.2V<br>VGS = 8.0V<br>4 4<br>Ro eS<br>|—_—__ wo<br>0 YEE EEE 0 ZFfff |<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 0.5 1.0 1.5 2.0 2.5 3.0<br>-VDS, DRAIN-SOURCE VOLTAGE (V) -VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 4 Typical Output Characteristics Fig. 5  Typical Transfer Characteristic<br>0.06 0.06<br>VGS = 4.5V<br>0.05 VGS = -1.5V<br>VGS = -1.8V TA = 150°C<br>0.04 0.04 TA = 125°C<br>ettae |  oohee<br>VGS = -2.5V<br>0.03<br>ee<br>VGS = -4.5V VGS = -3.5V TA = 85°C TA = 25°C<br>0.02 TTT LLL 0.02 onel<br>TA = -55°C<br>EEL EEL P|<br>0.01<br>0 PELELLLEL 0 ttt| ft<br>0 4 8 12 16 20 0 4 8 12 16 20<br>ID, DRAIN-SOURCE CURRENT (A) ID, DRAIN CURRENT (A)<br>Fig. 6  Typical On-Resistance  Fig. 7 Typical On-Resistance<br>vs. Drain Current and Gate Voltage  vs. Drain Current and Temperature<br>1.7 0.06<br>1.5 VGS = -2.5V 0.05 VGS = -2.5V<br>ID = -5A ID = -5A<br>1.3 CO 0.04 eae<br>CT<br>1.1 VGS = -4.5V 0.03<br>ID = -10A VGS = -4.5V<br>ID = -10A<br>0.9 ee 0.02 ertee<br>ETT eerie<br>0.7 Ti itty 0.01 TEETT<br>0.5 0<br>-50 EEE -25 0 25 50 75 ELL 100 125 150 -50 EEL -25 0 25  EEL 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C)<br>Fig. 8 On-Resistance Variation with Temperature Fig. 9 On-Resistance Variation with Temperature<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DSON<br>(NORMALIZED)<br>, DRAIN-SOURCE  ON-RESISTANCE<br>DSON<br>R<br>, DRAIN CURRENT (A)<br>-I<br>D<br>, DRAIN CURRENT (A)<br>D<br>-I<br>)<br>,  DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>**----- End of picture text -----**<br>


4 of 7 **www.diodes.com** 

DMP1245UFCL Document number: DS35505  Rev. 2 - 2 

March 2015 © Diodes Incorporated 

**DMP1245UFCL** 

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1.4 20<br>1.2<br>16<br>1.0 CECE of<br>12<br>0.8<br>TA = 25°C<br>0.6 ttt~ tt ————f—<br>8<br>ee ID = -1mA eeA<br>0.4<br>SS a<br>0.2 ID = -250µA 4<br>{tf | SS Of<br>0 FL EEL LI 0 ee<br>-50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1 1.2<br>TA, AMBIENT TEMPERATURE (°C) VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 10 Gate Threshold Variation vs. Ambient Temperature Fig. 11 Diode Forward Voltage vs. Current<br>100,000 2,500<br>TA = 150°C<br>10,000 TA = 125°C 2,000<br>SSs— Ee<br>1,000 SS TA = 85°C 1,500  N CISS<br>————— ann —<br>100 1,000<br>aoe T A  = 25°C CU WI COSS<br>10 500<br>===—=s= Nee<br>CRSS<br>1 === === 0  | Por<br>0 2 4 6 8 10 12 0 4 8 12 16 20<br>VDS, DRAIN-SOURCE VOLTAGE (V)  VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 12 Typical Drain-Source Leakage Current vs. Voltage  Fig. 13 Typical Junction Capacitance<br>8<br>6<br>VDS = -10V<br>ID = -1A<br>4<br>2<br>0<br>0 5 10 15 20 25 30<br>Qg, TOTAL GATE CHARGE (nC)<br>Fig. 14 Gate-Charge Characteristics<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>GS<br>, GATE-SOURCE VOLTAGE (V)<br>V<br>, GATE THRESHOLD VOLTAGE (V)<br>V<br>GS(TH)<br>, LEAKAGE CURRENT (nA)<br>IDSS<br>, SOURCE CURRENT (A)<br>IS<br>**----- End of picture text -----**<br>


5 of 7 **www.diodes.com** 

DMP1245UFCL Document number: DS35505  Rev. 2 - 2 

March 2015 © Diodes Incorporated 

**DMP1245UFCL** 

## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 

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X1-DFN1616-6<br>A3<br>A1 Type E<br>Dim  Min  Max  Typ<br>A  0.47  0.53  0.50<br>A M osel} Epp<br>A1  0  0.05  0.02<br>D<br>A3  —  —  0.13<br>D2 b  0.20  0.30  0.25<br>— SEE b1  0.10  0.30  0.20<br>D  1.55  1.65  1.60<br>b1<br>D2  0.57  0.77  0.67<br>E in E2 L1 SEE E  1.55  1.65  1.60<br>E2  1.30  1.50  1.40<br> e  —  —  0.50<br>L(2X) L  0.25  0.35  0.30<br>e L1  0.52  0.72  0.62<br>Z(4X) b(6X) Z  —  —  0.175<br>All Dimensions in mm<br>Ji | BRR<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version. 

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X3<br>Y (2x)<br>Y2 Y 1<br>X2<br>X1<br>pat<br>X (6x) C<br>|Et<br>**----- End of picture text -----**<br>


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Value<br>Dimensions<br>(in mm)<br>C  0.500<br>X  0.300<br>X1  0.200<br>X2  0.720<br>X3  0.400<br>Y  0.475<br>Y1  0.620<br>Y2  1.900<br>**----- End of picture text -----**<br>


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DMP1245UFCL Document number: DS35505  Rev. 2 - 2 

March 2015 

© Diodes Incorporated 

**DMP1245UFCL** 

## **IMPORTANT NOTICE** 

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Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated 

**www.diodes.com** 

7 of 7 **www.diodes.com** 

DMP1245UFCL Document number: DS35505  Rev. 2 - 2 

March 2015 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMP1245UFCL-7/power-mosfet-p-channel-12-v-66-a-0025-ohm-x1)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmp1245ufcl-7/mosfet-p-ch-12v-6-6a-x1-dfn1616/dp/3943698)
---

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