# Power MOSFET, P Channel, 12 V, 2.5 A, 0.065 ohm, X2-WLB0808, Surface Mount

![Product image](https://novapart.co/image/farnell:3943696RL/)

**URL**: https://novapart.co/products/DMP1100UCB4-7/power-mosfet-p-channel-12-v-25-a-0065-ohm-x2
**SKU**: DMP1100UCB4-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1240
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 4Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 670mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | X2-WLB0808 |
| Drain Source Voltage Vds | 12V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 2.5A |
| Drain Source On State Resistance | 0.065ohm |
| Gate Source Threshold Voltage Max | 550mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943696RL/)

**DMP1100UCB4** [| **P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** (Typ @VGS = -4.5V, TA = +25°C) 

|**BVDSS**|**RDS(ON)**|**Qg**|**Qgd**|**ID**|
|---|---|---|---|---|
|-12V|65mΩ|9nC|2.4nC|-3.2A|



## **Features and Benefits** 

- Built-in G-S Protection Diode against ESD 2kV HBM 

- Ultra Small 0.8mm x 0.8mm Package 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Description and Applications** 

This new generation MOSFET is designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a high-performance MOSFET in ultra-small 0.8mm x 0.8mm package. 

## **Mechanical Data** 

   - Case: X2-WLB0808-4 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminal Connections: See Diagram 

   - UBM Opening: 203µm 

- Portable Applications 

- Load Switch 

- Power Management Functions 

ESD PROTECTED 

Top View 

## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information**(Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMP1100UCB4-7|X2-WLB0808-4|3,000/Tape &Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

9W = Product Type Marking Code YM = Date Code Marking Y or M or M = Month (ex: 9 = September) Y ~~_~~ = Year (ex: D = 2016) 

Date Code Key 

|Date Code Keyy|||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**Year**|**2016**||||**2017**|||**2018**|||**2019**||||**2020**|||**2021**|||**2022**||
|**Code**|D||||E|||F|||G||||H|||I||||J|
||||||||||||||||||||||||
|**Month**|**Jan**||**Feb**||**Mar**|**Apr**||**May**||**Jun**|||**Jul**||**Aug**|**Sep**||**Oct**||**Nov**||**Dec**|
|**Code**|1||2||3||4|5||6|||7||8|9||O||N||D|



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DMP1100UCB4 Document number: DS38339  Rev. 3 - 2 

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**DMP1100UCB4** 

## **Maximum Ratings** 

||||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage||VDSS|-12|V|
|Gate-Source Voltage||VGSS|8|V|
|Continuous Source Current @ VGS= -4.5V (Note 5)|TA= +25°C<br>TA= +70°C|ID|-2.5<br>-2.0|A|
|Continuous Source Current @ VGS= -4.5V (Note 6)|TA= +25°C<br>TA= +70°C|ID|-3.2<br>-2.6|A|
|Pulsed Drain Current(Pulse Duration 10μs,DutyCycle ≤1%)||IDM|-13|A|
|Continuous Source-Drain Diode Current||IS|-1.2|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)|PD|0.67|W|
|Thermal Resistance,Junction to Ambient(Note 5)|RJA|187|°C/W|
|Total Power Dissipation(Note 6)|PD|1.1|W|
|Thermal Resistance, Junction to Ambient(Note 6)|RJA|117|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7)**<br>~~a~~|||||||
|Drain-Source Breakdown Voltage<br>~~———~~|BVDSS<br>~~———~~<br>~~a~~|-12<br>~~———~~|-<br>~~———~~|-<br>~~———~~|V<br>~~———~~|VGS= 0V,ID= -250μA<br>~~———~~|
|Zero Gate Voltage Drain Current<br>~~———~~|IDSS<br>~~———~~<br>~~a~~|-<br>~~———~~|-<br>~~———~~|1<br>~~———~~|µA<br>~~———~~|VDS= -12V,VGS= 0V<br>~~———~~|
|Gate-BodyLeakage<br>~~———~~|IGSS<br>~~———~~<br>~~a~~|-<br>~~———~~|-<br>~~———~~|10<br>~~———~~|µA<br>~~———~~|VGS=8V,VDS= 0V<br>~~———~~|
|**ON CHARACTERISTICS(Note 7)**<br>~~a~~|||||||
|Gate Threshold Voltage|VGS(TH)|-0.35|-0.55|-0.8|V|VDS= VGS,ID = -250μA|
|Static Drain-Source On-Resistance|RDS(ON)|-|65<br>80<br>90<br>115<br>135<br>150|83<br>96<br>150<br>170<br>300<br>400|mΩ|VGS= -4.5V, ID= -3A<br>VGS= -2.5V, ID= -2A<br>VGS= -1.8V, ID= -1A<br>VGS= -1.5V, ID= -1A<br>VGS= -1.4V, ID= -1A<br>VGS= -1.3V,ID= -1A|
|Forward Transfer Admittance||Yfs||-|6.5|-|S|VDS= -4V,IS= -1.5A|
|BodyDiode Forward Voltage|VSD|-|-0.7|-|V|VGS= 0V,IS= -1.5A,|
|**DYNAMIC CHARACTERISTICS(Note 8)**|||||||
|Input Capacitance<br>~~———~~|Ciss<br>~~———~~|-<br>~~———~~|680<br>~~———~~|820<br>~~———~~|pF<br>~~———~~|VDS= -6V, VGS= 0V,<br>f = 1.0MHz<br>~~———~~|
|Output Capacitance<br>~~———~~|Coss<br>~~———~~|-<br>~~———~~|220<br>~~———~~|290<br>~~———~~|pF<br>~~———~~||
|ReverseTransferCapacitance<br>~~———~~|Crss<br>~~———~~|-<br>~~———~~|205<br>~~———~~|280<br>~~———~~|pF<br>~~———~~||
|Gate Resistance<br>~~———~~|Rg<br>~~———~~|-<br>~~———~~|11.2<br>~~———~~|17<br>~~———~~|Ω<br>~~———~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~———~~|
|Total Gate Charge|Qg|-|9.0|14|nC|VGS= -4.5V, VDS= -6V,<br>ID= -2A|
|Gate-Source Charge|Qgs|-|1.0|-|nC||
|Gate-Drain Charge|Qgd|-|2.6|-|nC||
|Turn-On DelayTime|tD(ON)|-|4.4|9|ns|VDD= -4V, ID= -2A<br>VGEN= -4.5V, Rg= 1Ω, RL= 3Ω|
|Turn-On Rise Time|tR|-|10.1|-|ns||
|Turn-Off DelayTime|tD(OFF)|-|22|33|ns||
|Turn-Off Fall Time|tF|-|20|-|ns||



- Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 

7. Short duration pulse test used to minimize self-heating effect. 

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DMP1100UCB4 Document number: DS38339  Rev. 3 - 2 

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**DMP1100UCB4** 

## **Electrical Characteristics** (@TA = 0°C.) 

|**Electrical Characteristics** (@TA = 0°C.)A = 0°C.)= 0°C.)|(@TA = 0°C.)A = 0°C.)= 0°C.)||||||
|---|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**ON CHARACTERISTICS(Note 7,Note 8)**|||||||
|Static Drain-Source On-Resistance|RDS(ON)|-|62<br>78<br>88<br>112<br>130<br>150|83<br>96<br>150<br>170<br>300<br>400|mΩ|VGS= -4.5V, ID= -3A<br>VGS= -2.5V, ID= -2A<br>VGS= -1.8V, ID= -1A<br>VGS= -1.5V, ID= -1A<br>VGS= -1.4V, ID= -1A<br>VGS= -1.3V,ID= -1A|



## **Electrical Characteristics** (@TA = + 65°C.) 

|**Electrical Characteristics** (@TA = + 65°C.)A = + 65°C.)= + 65°C.)|(@TA = + 65°C.)A = + 65°C.)= + 65°C.)||||||
|---|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**ON CHARACTERISTICS(Note 7,Note 8)**|||||||
|Static Drain-Source On-Resistance|RDS(ON)|-|73<br>89<br>107<br>127<br>141<br>163|93<br>118<br>185<br>195<br>300<br>400|mΩ|VGS= -4.5V, ID= -3A<br>VGS= -2.5V, ID= -2A<br>VGS= -1.8V, ID= -1A<br>VGS= -1.5V, ID= -1A<br>VGS= -1.4V, ID= -1A<br>VGS= -1.3V,ID= -1A|



Note: 8. Guaranteed by design. Not subject to production testing. 

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**DMP1100UCB4** 

**==> picture [498 x 665] intentionally omitted <==**

**----- Start of picture text -----**<br>
10.0   10<br> VGS = -2.0V  VDS = -5V<br> VGS = -2.5V<br>8.0    VGS = -3.0V  8<br> VGS = -4.5V<br>6.0   f ins  VGS  e = -8.0V  6  e eee<br> VGS = -1.5V<br>4.0   4<br>| a<br>125 ℃<br>2.0   Vo  VGS = -1.2V  2  f f<br>85 ℃<br>150 ℃<br> VGS = -1.0V  -55 ℃ 25 ℃<br>0.0   p O 0  a a<br>0  1  2  3  0  0.5  1  1.5  2<br>VDS, DRAIN-SOURCE VOLTAGE (V)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic  Figure 2. Typical Transfer Characteristic<br>0.2  0.1<br>VGS=-4.5V<br>0.09  150 ℃<br> VGS = -1.5V  cy FETT TT<br>0.15  0.08  125 ℃<br>o T<br>85 ℃<br>0.07<br>T ET<br>25 ℃<br>0.1   VGS = -3.6V   VGS =-2.5V  0.06  SS nnnn000<br>-55 ℃<br>0.05  e e<br> VGS = -4.5V<br>PLELELELLE<br>0.05  0.04<br>0  2  4  6  8  10  1  2  3  4  5  6  7  8  9  10<br>ID, DRAIN-SOURCE CURRENT (A)   ID, DRAIN CURRENT (A)<br>Figure 3. Typical On-Resistance vs. Drain Current and  Figure 4. Typical On-Resistance vs. Drain Current and<br>Gate Voltage   Junction Temperature<br>1.4  0.2<br>0.18<br>1.3   VGS = -2.5V, ID = -2.0A   VGS = -1.3V, ID =-1.0A<br>1.2  a  VGS = -4.5V, ID = -3.0A  0.16   VGS = -1.4V, ID =-1.0A<br>0.14<br>1.1  OK 0.12  a<br>0.1   VGS = -1.5V, ID =-1.0A<br>1  aa d  VGS = -1.5V, ID = -1A  a<br>0.08<br>0.9<br>pe a man See<br>0.06   VGS = -4.5V, ID = -3.0A<br>A  VGS = -2.5V, ID = -2.0A<br>0.8  0.04<br>-50  -25  0  25  50  75  100  125  150  -50  -25  0  25  50  75  100  125  150<br>TJ, JUNCTION TEMPERATURE ( ℃ )  TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 5. On-Resistance Variation with Junction  Figure 6. On-Resistance Variation with Junction<br>Temperature  Temperature<br>, DRAIN CURRENT (A) ID , DRAIN CURRENT (A) ID<br>)<br>W<br>)<br>(W<br>, DRAIN-SOURCE ON-RESISTANCE<br> DRAIN-SOURCE ON-RESISTANCE (,<br>DS(ON)<br>R<br>DS(ON)<br>R<br>)<br>W<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>, DRAIN-SOURCE ON-ESISTANCE (<br>DS(ON)<br>R DS(ON)<br>R<br>**----- End of picture text -----**<br>


Figure 4. Typical On-Resistance vs. Drain Current and 

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**DMP1100UCB4** 

**==> picture [506 x 643] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.8  10<br>VGS = 0V<br>0.7  ID = -1mA  8<br>SN H<br>0.6  e T  Te f f<br>6<br>0.5  m™ ID = -250μA  ttt f f<br>4<br>0.4  eS!<br>TJ = 125 [o] C  TJ = 85 [o] C<br>0.3  “Ss 2  UF TJ = 150 [o] C  TJ = -55TJ = 25 [o] C  [o] C<br>0.2  CCocrPNSNN 0  ULLje<br>-50  -25  0  25  50  75  100  125  150  0  0.3  0.6  0.9  1.2  1.5<br>TJ, JUNCTION TEMPERATURE ( ℃ )  VSD, SOURCE-DRAIN VOLTAGE (V)<br>Figure 8. Diode Forward Voltage vs. Current<br>Figure 7. Gate Threshold Variation vs. Junction<br>Temperature<br>10000<br>8<br>f=1MHz<br>S S 6  rT | CY<br>1000   Ciss<br>St :<br>VDS = -6V, ID = -2.0A<br>Coss<br>4<br>Crss<br>100<br>e e ee 2  ae<br>10   SSS SS 0  aan<br>es [<br>0  2  4  6  8  10  12  0  3  6  9  12  15<br>VDS, DRAIN-SOURCE VOLTAGE (V)  Qg (nC)<br>Figure 9. Typical Junction Capacitance  Figure 10. Gate Charge<br>100  400<br>RDS(ON) Limited  PW =100µs  Single Pulse RRθJA θJA = 187(t)=RθJA ℃  * r(t) /W<br>10  300  TJ-TA=P * RθJA (t)<br>1  200<br>PW =1ms<br>PW =10ms  PW =1s<br>0.1  PW =100ms  100<br>TJ(Max) = 150 ℃  TC = 25 ℃ PW =10s<br>Single Pulse<br>DUT on 1*MRP Board  DC<br>0.01  VGS= -3.6V  siiczsc 0  UNSUM<br>0.1  1  10  100  1E-05 0.0001 0.001 0.01  0.1  1  10  LL) 100 1000<br>VDS, DRAIN-SOURCE VOLTAGE (V)  t1, PULSE DURATION TIME (sec)<br>Figure 11. SOA, Safe Operation Area  Figure 12. Single Pulse Maximum Power Dissipation<br>Is, SOURCE CURRENT (A)<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br> (V)<br>GS<br>V<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, DRAIN CURRENT (A)<br>ID<br>, PEAK TRANSIENT POWER (W)<br>(pk)<br>P<br>**----- End of picture text -----**<br>


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**==> picture [409 x 240] intentionally omitted <==**

**----- Start of picture text -----**<br>
1  eee ee TE a<br>TT<br>D=0.7<br>SOU D=0.5  Ce OrSSSTOTTISSS rt at<br>Fo iene eee —cae<br>germ<br>D=0.3  IT LIE<br>D=0.9<br>T T IN ET PE<br>0.1  E NRBe? MA<br>D=0.1<br>SE atat<br>D=0.05<br>arene an ene a eet |e el ATG<br>R/O<br>TR Lf D=0.02<br>0.01  ul l<br>D=0.01<br>PEE R)  EEEI ETT<br>Se ee ca D=0.005  elias eae eee ee ee<br>en ly DT<br>a a RθJA(t) = r(t) * RθJA mill<br>RθJA = 187 ℃ /W<br>D=Single Pulse  Duty Cycle, D = t1 / t2<br>0.001<br>1E-05  0.0001  0.001  0.01  0.1  1  10  100  1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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DMP1100UCB4 Document number: DS38339  Rev. 3 - 2 

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**DMP1100UCB4** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **X2-WLB0808-4** 

|D<br>E<br>A2<br>A<br>Seating Plane<br>Pin1<br>~~|~~<br>6d<br>dT<br>~~iat7~~<br>s~~ot~~|e<br>~~na~~<br>~~LOL~~|e<br>Ø b (4x)|**Dim**<br>**A**<br>**A2**<br>**b**<br>**D**<br>**E**<br>**e**<br>**All Dimensions in mm**|**X2-WLB0808-4**<br>**Dim**<br>**Min**<br>**Max**<br>**Typ**<br>--<br>0.400 0.375<br>--<br>--<br>0.180<br>0.1971<br>0.2409 0.219<br>0.790 0.820 0.816<br>0.790 0.820 0.816<br>--<br>--<br>0.400<br>**All Dimensions in mm**|
|---|---|---|---|---|



## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**X2-WLB0808-4** 

|Ø D (4x)|||||
|---|---|---|---|---|
|C<br>C<br>~~oe~~<br>||||**Dimensions**<br>**C**<br>**D**|**Value**<br>**(in mm)**<br>0.400<br>0.219|



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DMP1100UCB4 Document number: DS38339  Rev. 3 - 2 

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**DMP1100UCB4** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A.   Life support devices or systems are devices or systems which: 

1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2016, Diodes Incorporated 

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## Links

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- [Supplier page](https://es.farnell.com/diodes-inc/dmp1100ucb4-7/mosfet-p-ch-12v-2-5a-x2-wlb0808/dp/3943696RL)
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