# Power MOSFET, P Channel, 100 V, 6 A, 0.203 ohm, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:3943695/)

**URL**: https://novapart.co/products/DMP10H400SEQ-13/power-mosfet-p-channel-100-v-6-a-0203-ohm-sot-223
**SKU**: DMP10H400SEQ-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2180
**Stock**: 500+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 13.7W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-223 |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 6A |
| Drain Source On State Resistance | 0.203ohm |
| Gate Source Threshold Voltage Max | 2.2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943695/)

**DMP10H400SEQ 100V P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON)Max**|**ID**<br>**TA = +25****C**|
|-100V|250m@ VGS= -10V|-2.3A|
||300m@ VGS= -4.5V|-2.1A|



## **Features and Benefits** 

- Low Gate Drive 

- Low Input Capacitance 

- Fast Switching Speed 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **PPAP Capable (Note 4)** 

## **Description and Applications** 

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: 

- Engine Management Systems 

- Body Control Electronics 

- DC-DC Converters 

## **Mechanical Data** 

- Case: SOT223 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals Connections: See Diagram Below 

- Terminals: Finish - Matte Tin Annealed over Copper Lead Frame. Solderable per MIL-STD-202, Method 208 O **e3** 

- Weight: 0.112 grams (Approximate) 

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Top View 

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## **Ordering Information** (Note 5) 

|**Ordering Informationg Information Information** (Note 5)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMP10H400SEQ-13|SOT223|2,500 / Tape & Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html. 

   5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

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YWW<br>P400SE<br>**----- End of picture text -----**<br>


= Manufacturer’s Marking P400SE = Marking Code YWW = Date Code Marking Y or Y= Year (ex: 15 = 2015) WW = Week (01 to 53) 

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DMP10H400SEQ Document Number DS38396  Rev. 2 - 2 

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**DMP10H400SEQ** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|-100|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current,VGS= -10V (Note 6)|Steady<br>State|TC= +25°C<br>TA= +25°C|ID|-6.0<br>-2.3|A|
|Maximum BodyDiode Forward Current(Note 6)|||IS|-1.9|A|
|Pulsed Drain Current(380s Pulse,DutyCycle = 1%)|||IDM|-10|A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation (Note 6)|TA= +25°C|PD|2.0|W|
||TA= +70°C||1.3||
|Thermal Resistance,Junction to Ambient(Note 6)||RθJA|62|°C/W|
|Total Power Dissipation(Note 6)|TC= +25°C|PD|13.7|W|
|Thermal Resistance,Junction to Case(Note 6)||RθJC|9.1|°C/W|
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~_~~|**Symbol**<br>|**Min**<br>|**Typ**<br>|**Max**<br>|**Unit**<br>|**Test Condition**<br>|
|**OFF CHARACTERISTICS(Note 7)**<br>~~_~~|||||||
|Drain-Source Breakdown Voltage<br>~~_~~|BVDSS<br><br>~~a~~|-100<br><br>~~a~~|<br><br>~~a~~|<br><br>~~a~~|V<br>|VGS= 0V,ID= -250µA<br>|
|Zero Gate Voltage Drain Current<br>~~_a~~|IDSS<br>~~a~~<br>~~a~~|<br>~~a~~<br>~~a~~|<br>~~a~~<br>~~a~~|1<br>~~a~~<br>~~a~~|µA<br>~~a~~|VDS= -80V,VGS= 0V<br>~~a~~|
|Gate-Source Leakage<br>~~a~~|IGSS<br>~~a~~<br>~~a~~|<br>~~a~~<br>~~a~~|<br>~~a~~<br>~~a~~|±100<br>~~a~~<br>~~a~~|nA<br>~~a~~|VGS= ±20V,VDS= 0V<br>~~a~~|
|**ON CHARACTERISTICS(Note 7)**<br>~~a~~<br>e~~f~~<br>~~i~~|||||||
|Gate Threshold Voltage<br>~~Ce~~<br>~~i~~|VGS(TH)<br>~~Ce~~<br>e~~f~~|-1.0<br>~~Ce~~<br>~~f~~|-2.2<br>~~Ce~~|-3.0<br>~~Ce~~|V<br>~~Ce~~|VDS= VGS,ID= -250µA<br>~~Ce~~|
|Static Drain-Source On-Resistance<br>~~i~~<br>~~a~~|RDS(ON)<br>e~~f~~|<br>~~f~~|203|250|m<br>~~QO~~|VGS= -10V,ID= -5A|
|||<br>~~f~~<br>~~GR~~|241<br>~~GR~~|300<br>~~(ORD~~||VGS= -4.5V,ID=-5A<br>~~(OO~~|
|Diode Forward Voltage<br>~~a~~|VSD|<br>~~GR~~|-0.9<br>~~GR~~|-1.2<br>~~(ORD~~|V<br>~~QO~~|VGS= 0V,IS= -5A<br>~~(OO~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~a~~<br>~~GR~~<br>~~(ORDQO (OO~~|||||||
|Input Capacitance<br>~~Ce~~<br>~~———~~|Ciss<br>~~———~~|<br>~~———~~|1239<br>~~———~~|<br>~~———~~|pF<br>~~———~~|VDS= -25V, VGS= 0V, f = 1.0MHz<br>~~———~~|
|Output Capacitance<br>~~———~~|Coss<br>~~———~~|<br>~~———~~|42<br>~~———~~|<br>~~———~~|||
|Reverse Transfer Capacitance<br>~~———~~|Crss<br>~~———~~|<br>~~———~~|28<br>~~———~~|<br>~~———~~|||
|Gate Resistance<br>~~———~~|Rg<br>~~———~~|<br>~~———~~<br>~~(~~|13<br>~~———~~<br>~~(~~<br>~~a~~|<br>~~———~~<br>~~a~~|<br>~~———~~<br>~~a~~|VDS= 0V,VGS= 0V,f = 1.0MHz<br>~~———~~<br>~~ee~~|
|Total Gate Charge(VGS= -4.5V)<br>~~a~~<br>~~———~~|Qg<br>~~a~~<br>~~———~~|<br>~~a~~<br>~~(~~<br>~~———~~|8.4<br>~~a~~<br>~~(~~<br>~~———~~<br>~~a~~|<br>~~a~~<br>~~———~~<br>~~a~~|nC<br>~~———~~<br>~~a~~|VDS= -60V, ID= -5A<br>~~———~~<br>~~ee~~|
|Total Gate Charge(VGS= -10V)<br>~~———~~|Qg<br>~~———~~|<br>~~(~~<br>~~———~~|17.5<br>~~(~~<br>~~———~~<br>~~a~~|<br>~~———~~<br>~~a~~|||
|Gate-Source Charge<br>~~———~~|Qgs<br>~~———~~|<br>~~———~~|2.8<br>~~———~~<br>~~a~~|<br>~~———~~<br>~~a~~|||
|Gate-Drain Charge<br>~~———~~|Qgd<br>~~———~~|<br>~~———~~|3.2<br>~~———~~<br>~~a~~|<br>~~———~~<br>~~a~~|||
|Turn-On DelayTime<br>~~eS~~|tD(ON)<br>~~eS~~|<br>~~eS~~|9.1<br>~~a~~<br>~~eS~~|<br>~~a~~<br>~~eS~~|ns<br>~~a ~~<br>~~eS~~|VDD= -50V, Rg= 9.1, ID= -5A<br> ~~ee~~<br>~~eS~~|
|Turn-On Rise Time<br>~~eS~~|tR<br>~~eS~~|<br>~~eS~~|14.9<br>~~eS~~|<br>~~eS~~|||
|Turn-Off DelayTime<br>~~eS~~<br>~~———a~~|tD(OFF)<br>~~eS~~<br>~~ee~~|<br>~~eS~~<br>~~ee~~|57.4<br>~~eS~~|<br>~~eS~~|||
|Turn-Off Fall Time<br>~~eS~~<br>~~———a~~|tF<br>~~eS~~<br>~~ee~~|<br>~~eS~~<br>~~ee~~|34.4<br>~~eS~~|<br>~~eS~~|||
|BodyDiode Reverse RecoveryTime<br>~~———a~~|tRR<br>~~ee~~|<br>~~ee~~<br>~~ff~~|25.2<br>~~ff~~|<br>~~ff~~|ns<br>~~ff~~|VGS= 0V,IS= -5A,di/dt = 100A/μs|
|BodyDiode Reverse RecoveryCharge<br>~~——— a ~~<br>~~Pee~~|QRR<br> ~~ee~~<br>~~Pee~~|<br>~~ee~~<br>~~Pee~~<br>~~ff~~|24.5<br>~~Pee~~<br>~~ff~~|<br>~~Pee~~<br>~~ff~~|nC<br>~~Pee~~<br>~~ff~~|VGS= 0V,IS= -5A,di/dt = 100A/μs<br>~~Pee~~|



Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 

7. Short duration pulse test used to minimize self-heating effect. 

8. Guaranteed by design. Not subject to production testing. 

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**DMP10H400SEQ** 

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10.0  8<br>VGS=-10V VGS=-4.5V VDS=-5V<br>8.0  VGS=-5.0V<br>ff 6<br>VGS=-4.0V<br>xo f e<br>6.0<br>4<br>f e<br>4.0<br>125 ℃ 85 ℃<br>ff VGS=-3.5V 2<br>2.0<br>150 ℃ 25 ℃<br>-55 ℃<br>VGS=-3.2V<br>0.0  -———-—-_ 0 —_#<br>0 1 2 3 4 5 1.5 2 2.5 3 3.5 4 4.5<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1.  Typical Output Characteristic Figure 2. Typical Transfer Characteristic<br>0.35 0.5<br>0.45<br>0.3<br>0.4 ee<br>0.25 VGS=-4.5V 0.35 ef<br>0.3 ee<br>0.2<br>VGS=-10V<br>0.25 Poh ff<br>ID=-5.0A<br>0.15<br>0.1 == 0.150.2 oNFfLeff<br>0 2 4 6 8 10 0 4 8 12 16 20<br>ID, DRAIN-SOURCE CURRENT (A)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs. Drain Current  Figure 4. Typical Transfer Characteristic<br>and Gate Voltage<br>0.5 2.1<br>VGS=-10V 150 ℃ 1.9 P| | t | tt dy<br>0.4 125 ℃ 1.7 eA VGS=-10V, ID=-5.0A<br>85 ℃ ee<br>1.5<br>0.3<br>1.3<br>25 ℃<br>0.2 1.1 c an VGS=-4.5V, ID=-5.0A<br>-55 ℃ 0.9 See<br>0.1<br>0.7 f r<br>7) | | |<br>0 sire 0.5 ae<br>0 2 4 6 8 10 -50 -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 5. Typical On-Resistance  vs. Drain Current and<br>Figure 6. On-Resistance Variation with Junction<br>Junction Temperature<br>Temperature<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>(Ω)<br>(Ω)<br>, DRAIN-SOURCE ON-RESISTANCE<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>DS(ON)<br>R<br>(NORMALIZED)<br> DRAIN-SOURCE ON-RESISTANCE<br>,  DRAIN-SOURCE ON-RESISTANCE (Ω) DS(ON),<br>DS(ON) R<br>R<br>**----- End of picture text -----**<br>


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0.5 2.6<br>0.45 TTT: =<br>2.4<br>0.4<br>ID=-1mA<br>Peeper 2.2 R RR<br>0.35 VGS=-4.5V, ID=-5.0A<br>0.3 P aaET Cea 2 {O ky ID N =-250μA u<br>0.25<br>Saarcenn 1.8 TTT) NNO<br>0.2 VGS=-10V, ID=-5.0A<br>1.6<br>0.15 >Aa Aaa TTT TSS\<br>0.1 1.4<br>eT TT ELT PTTL PTET<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ( ℃ ) TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 7. On-Resistance Variation with Junction   Figure 8. Gate Threshold Variation vs. Junction<br>Temperature Temperature<br>10 10000<br>f=1MHz<br>8 I ——————<br>Ciss<br>VGS=0V, TJ=85 ℃ 1000<br>6 H L ——<br>VGS=0V, TJ=125 ℃<br>4 | ==<br>100<br>VGS=0V, TJ=150 ℃ Coss<br>2 Hl VGS=0V, TJ=25 ℃ e e<br>VGS=0V, TJ=-55 ℃ Crss<br>0 PL 10  ne Se<br>0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 30 35 40<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance<br>10 100<br>RDS(ON) Limited<br>PW=100μs<br>8 10 PW=1ms<br>6 VDS=-60V, ID=-5A 1<br>PW=10ms<br>4 0.1 PW=100ms<br>PW=1s<br>2 0.01 TTJ(MAX)C=25 ℃ =150 ℃ PW=10s<br>Single Pulse DC<br>DUT on 1*MRP board<br>VGS= -10V<br>0 0.001<br>0 2 4 6 8 10 12 14 16 18 0.1 1 10 100 1000<br>Qg, TOTAL GATE CHARGE (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. Gate Charge Figure 12. SOA, Safe Operation Area<br>, DRAIN-SOURCE ON-RESISTANCE (Ω) , GATE THRESHOLD VOLTAGE (V)<br>DS(ON) VGS(TH)<br>R<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>(V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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**DMP10H400SEQ** 

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1<br>ga sSe —<br>D=0.5<br>FEET EELap emerseRgne | emtS HE HHT<br>D=0.9<br>D=0.3 On TATE Ca CET<br>D=0.7<br>0.1 CHIMEeeta a meect A | 8lll Llmaiiill<br>D=0.1<br>E a esaorm i t te<br>Lam| | mT<br>D=0.05<br>F AT<br>TE TT<br>D=0.02<br>T e HAH HR HH<br>0.01 cu D=0.01 ft AyALTeee eeeIT LTeee LALITree ULIeee ee<br>E La EESSS EHS ee<br>Lame =e 40 8<br>pO D=0.005 WwSAI [AAI] | TAee [TTT] I CC [TPT] PEI PT RθJA(t)=r(t) * RθJA il<br>RθJA=98 ℃ /W<br>D=Single Pulse Duty Cycle, D=t1 /  t2<br>0.001<br>1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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**DMP10H400SEQ** 

## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 

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SOT223<br>D<br>b1 Q<br>C<br>SOT223<br>Spe ee Dim  Min  Max  Typ<br>A 1.55 1.65 1.60<br>A1 0.010 0.15  0.05<br>fi E E1 Se b 0.60  0.80  0.70<br>b1 2.90  3.10  3.00<br>Gauge<br>Plane C 0.20  0.30  0.25<br>G 0.25 o === D 6.45  6.55  6.50<br>Seating L E 3.45  3.55  3.50<br>Plane<br>E1 6.90  7.10  7.00<br>- e1 b e -  -  4.60<br>ail e ve e1 -  -  2.30<br>L 0.85 1.05 0.95<br>Q 0.84  0.94  0.89<br>A A1 7° All Dimensions in mm<br>0°-10°<br>7°<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

**SOT223** 

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X1<br>Y1<br>Dimensions Value (in mm)<br>C 2.30<br>C1  6.40<br>X  1.20<br>a X1  3.30<br>C1 Y2 Y  1.60<br>Y1  1.60<br>Y2  8.00<br>Y<br>‘q X og C L<br>**----- End of picture text -----**<br>


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DMP10H400SEQ Document Number DS38396  Rev. 2 - 2 

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**DMP10H400SEQ** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

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This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2015, Diodes Incorporated 

**www.diodes.com** 

7 of 7 **www.diodes.com** 

DMP10H400SEQ Document Number DS38396  Rev. 2 - 2 

December 2015 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMP10H400SEQ-13/power-mosfet-p-channel-100-v-6-a-0203-ohm-sot-223)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmp10h400seq-13/mosfet-p-ch-100v-6a-sot-223/dp/3943695)
---

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