# Power MOSFET, P Channel, 12 V, 5.5 A, 0.026 ohm, X2-DFN2015, Surface Mount

![Product image](https://novapart.co/image/farnell:3943693/)

**URL**: https://novapart.co/products/DMP1045UFY4-7/power-mosfet-p-channel-12-v-55-a-0026-ohm-x2
**SKU**: DMP1045UFY4-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1220
**Stock**: 10+
**Lead Time**: 106 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 700mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | X2-DFN2015 |
| Drain Source Voltage Vds | 12V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 5.5A |
| Drain Source On State Resistance | 0.026ohm |
| Gate Source Threshold Voltage Max | 550mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943693/)

**DMP1045UFY4** 

**P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

## **Features** 

- Low On-Resistance 

|**V(BR)DSS**|**RDS(on) max**|**ID**<br>TA= 25°C|
|---|---|---|
|-12V|32mΩ@VGS= -4.5V|-5.5A|
||45mΩ@VGS= -2.5V|-4.5A|
||75mΩ@VGS= -1.8V|-3.2A|



- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- **ESD Protected Up To 3kV** 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- • **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Description** 

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

## **Mechanical Data** 

- Case: X2-DFN2015-3 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

## **Applications** 

- DC-DC Converters 

- Power management functions 

   - Terminal Connections: See Diagram 

   - Terminals: Finish – NiPdAu over Copper leadframe. Solderable 

   - • per MIL-STD-202, Method 208 **e4** 

   - Weight: 0.008 grams (approximate) 

- Analog Switch 

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X2-DFN2015-3<br>**----- End of picture text -----**<br>


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ESD PROTECTED TO 3kV<br>**----- End of picture text -----**<br>


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S<br>D<br>G<br>@&®S<br>Top View  Bottom View Internal Schematic<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|
|---|---|---|
||||
|**Part Number**|**Case**|**Packaging**|
|DMP1045UFY4-7|X2-DFN2015-3|3,000/Tape & Reel|
|DMP1045UFY4-13|X2-DFN2015-3|10,000/Tape &Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com. 

## **Marking Information** 

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15P<br>YM<br>=<br>**----- End of picture text -----**<br>


15P = Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September) 

1 of 6 **www.diodes.com** 

DMP1045UFY4 Document number: DS31853  Rev. 7 - 2 

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**DMP1045UFY4** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|
|**Characteristic**<br>**Symbol**<br>**Value**<br>**Unit**<br>Drain-Source Voltage<br>VDSS<br>-12<br>V<br>Gate-Source Voltage<br>VGSS<br>±8<br>V<br>Continuous Drain Current VGS= -4.5V (Note 6)<br>Steady<br>State<br>TA= +25°C<br>TA= +70°C<br>ID<br>-5.5<br>-4.3<br>A<br>t<5s<br>TA= +25°C<br>TA= +70°C<br>-6.5<br>-5.1<br>A<br>Maximum Continuous BodyDiode Forward Current(Note 6)<br>IS<br>-2.2<br>A<br>Pulsed Drain Current(10μspulse,dutycycle = 1%)<br>IDM<br>-25<br>A<br>**Thermal Characteristics **(@TA= +25°C, unless otherwise specified.)<br>**Characteristic**<br>**Symbol**<br>**Value**<br>**Unit**<br>Power Dissipation (Note 5)<br>TA= +25°C<br>PD<br>0.7<br>W<br>TA= +70°C<br>0.4<br>Thermal Resistance, Junction to Ambient (Note 5)<br>Steadystate<br>RθJA<br>193<br>°C/W<br>t<5s<br>135<br>Power Dissipation (Note 6)<br>TA= +25°C<br>PD<br>1.7<br>W<br>TA= +70°C<br>1.1<br>Thermal Resistance, Junction to Ambient (Note 6)<br>Steady state<br>RθJA<br>73<br>°C/W<br>t<5s<br>52<br>Thermal Resistance,Junction to Case(Notes 6)<br>Steadystate<br>RθJC<br>17<br>~~Nee~~<br>~~—_————~~<br>~~EE~~<br>~~EOE~~<br>~~SOE~~<br>~~a~~<br>~~ESE~~<br>~~ees~~<br>~~ee~~||
||Operatingand Storage Temperature Range<br>TJ,TSTG<br>-55 to +150<br>°C|
|||
||**Electrical Characteristics** (@TA= +25°C, unless otherwise specified.)|
|||
||**Characteristic**<br>**Symbol **<br>**Min**<br>**Typ**<br>**Max **<br>**Unit**<br>**Test Condition **|
||**OFF CHARACTERISTICS(Note 7)**|
||Drain-Source Breakdown Voltage<br>BVDSS<br>-12<br>-<br>-<br>V<br>VGS= 0V,ID= -250μA|
||Zero Gate Voltage Drain Current TJ= 25°C<br>IDSS<br>-<br>-<br>-1.0<br>μA<br>VDS= -12V,VGS= 0V|
||Gate-Source Leakage<br>IGSS<br>-<br>-<br>±10<br>μA<br>VGS=±8V,VDS= 0V|
||**ON CHARACTERISTICS (Note 7)**|
||Gate Threshold Voltage<br>VGS(th)<br>-0.3<br>-0.55<br>-1.0<br>V<br>VDS= VGS,ID= -250μA<br>Static Drain-Source On-Resistance<br>RDS (ON)<br>-<br>26<br>32<br>mΩ<br>VGS= -4.5V,ID= -4.0A<br>31<br>45<br>VGS= -2.5V,ID= -3.5A<br>51<br>75<br>VGS= -1.8V,ID= -2.7A<br>Forward Transfer Admittance<br>|Yfs|<br>-<br>12<br>-<br>S<br>VDS= -5V,ID= -4A<br>~~es~~|
||Diode Forward Voltage<br>VSD<br>-<br>-0.6<br>-<br>V<br>VGS= 0V,IS= -1A|
||**DYNAMIC CHARACTERISTICS (Note 8)**|
||Input Capacitance<br>Ciss<br>-<br>1291<br>-<br>pF<br>VDS= -10V, VGS= 0V<br>f = 1.0MHz<br>Output Capacitance<br>Coss<br>-<br>266<br>-<br>pF<br>Reverse Transfer Capacitance<br>Crss<br>-<br>242<br>-<br>pF<br>Gate Resistnace<br>Rg<br>-<br>13<br>-<br>Ω<br>VDS= 0V,VGS= 0V,f = 1.0MHz<br>**SWITCHING CHARACTERISTICS (Note 8)**<br>~~———~~<br>~~a~~|
||Total Gate Charge(VGS= -8V)<br>Qg<br>-<br>23.7<br>-<br>nC<br>VDS= -10V, ID= -4A<br>Total Gate Charge(VGS= -4.5V)<br>Qg<br>-<br>14.7<br>nC<br>Gate-Source Charge<br>Qgs<br>-<br>1.8<br>-<br>nC<br>Gate-Drain Charge<br>Qgd<br>-<br>4.6<br>-<br>nC<br>Turn-On DelayTime<br>tD(on)<br>-<br>14<br>-<br>ns<br>VDS= -10V, VGS= -4.5V,<br>RL= 2.5Ω, RG= 3.0Ω<br>Turn-On Rise Time<br>tr<br>-<br>22<br>-<br>ns<br>Turn-Off DelayTime<br>tD(off)<br>-<br>74<br>-<br>ns<br>Turn-Off Fall Time<br>tf<br>-<br>75<br>-<br>ns<br>~~———~~<br>~~eee~~<br>~~———~~<br>~~ee~~|



- Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 

   8. Guaranteed by design. Not subject to production testing. 

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**DMP1045UFY4** 

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20 VGS = -8.0V 20<br>VGS = -4.5V VDS = -5.0V<br>VGS = -2.5V<br>15 V GS = -2.0V 15<br>VGS = -1.8V<br>10 ff 10<br>VGS = -1.5V<br>5 Wo 5 |<br>TA = 150°C TA = 85°C<br>VGS = -1.2V TA = 125°C TA = 25°C<br>0 0 TA = -55°C<br>0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.5 1.0 1.5 2.0 2.5<br>-VDS, DRAIN -SOURCE VOLTAGE (V) -VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics<br>0.12 0.20<br>0.18<br>0.10 TLL 0.16 ne<br>0.14<br>TEER CT<br>0.08<br>0.12 I D = -4.0A<br>0.06 0.10<br>LTT ALL Sth Ee<br>VGS = -1.8V 0.08<br>0.04<br>pean 0.06 SEES<br>VGS = -2.5V<br>eee VGS = -4.5V 0.04<br>0.02<br>0.02<br>0 PTLLELE  LL 0 HEE EEE<br>0 4 8 12 16 20 0 1 2 3 4 5 6 7 8<br>-ID, DRAIN SOURCE CURRENT (A) -VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 3 Typical On-Resistance vs.  Fig. 4 Typical Drain-Source On-Resistance<br>Drain Current and Gate Voltage  vs. Gate-Source Voltage<br>0.06 1.7<br>VGS = -4.5V 1.5 VIDGS = -5A = -2.5V<br>0.04 T A  = 125°C T A  = 150°C 1.3 reEEEREED<br>TA = 85°C 1.1 VID GS  = -10A= -4.5V<br>TA = 25°C<br>et<br>0.02 TA = -55°C 0.9 Epeann<br>0.7 TL TL<br>0 0.5 EEE<br>0 5 10 15 20 -50 -25 0 25 50 EL 75 100 Ee 125 150<br>-ID, DRAIN SOURCE CURRENT (A) TJ, JUNCTION TEMPERATURE (°C)<br>Fig. 5 Typical On-Resistance vs.  Fig. 6 On-Resistance Variation with Temperature<br>Drain Current and Temperature<br>, DRAIN CURRENT (A)-ID , DRAIN CURRENT (A)-ID<br>)Ω )Ω<br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>)Ω<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>, DRAIN-SOURCE ON-RESISTANCE ( ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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**www.diodes.com** 

**DMP1045UFY4** [| 

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0.10<br>0.08<br>0.06<br>VGS  -2.= 5V<br>ID  -5= A<br>0.04<br>VGS = -4.5V<br>0.02 I D   -10= A<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (°C)<br>Fig. 7 On-Resistance Variation with Temperature<br>20<br>16<br>128 lft TA= 25°C<br>4 /<br>0 _<br>0.4 0.6 0.8 1.0 1.2 1.4<br>-VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 9 Diode Forward Voltage vs. Current<br>8<br>{<br>6<br>VDS = -10V<br>ID = -4A /<br>4<br>2<br>0 rr te |]<br>0 5 10 15 20 25<br>Qg, TOTAL GATE CHARGE (nC)<br>Fig. 11 Gate-Charge Characteristics<br>)Ω<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(on)<br>R<br>, SOURCE CURRENT (A)<br>S<br>-I<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>-V<br>**----- End of picture text -----**<br>


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1.0<br>0.8<br>0.6 -I D = 250µA<br>0.4<br>0.2<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE (°C)<br>Fig. 8 Gate Threshold Variation vs. Ambient Temperature<br>10,000 ————a<br>ee ee f = 1MHz<br>———————<br>DoeeEr<br>1,000 Ciss<br>Soo<br>SSS a C oss<br>a ee C rss<br>100 le LL<br>a a<br>a<br>10 P| | | ft ft<br>0 2 4 6 8 10 12<br>-VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 10 Typical Junction Capacitance<br>100<br>[| R LimitedDS(on) PT TT P W  = 10µs TT<br>10 StETHieNE i llat<br>AN<br>RON ONE<br>RS<br>DC<br>SSTel<br>1 PW = 10s<br>PW = 1s<br>fy P W  = 100ms MAWSON<br>PW = 10ms<br>| | dt PW = 1ms SSK INP|<br>0.1 T  = 150°C PW = 100µs<br>J(max)<br>TA = 25°C<br>VGS = -8V ee<br>Single Pulse<br>DUT on 1 * MRP Board<br>0.01 eae e ee li<br>0.1 1 10 100<br>-VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 12 SOA, Safe Operation Area<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, DRAIN CURRENT (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


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DMP1045UFY4 Document number: DS31853  Rev. 7 - 2 

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**DMP1045UFY4** 

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1<br>D = 0.7<br>i D = 0.5 e aia as See eT eee<br>a D = 0.3 ee ae en ee<br>0.1 PATI D = 0.1 IT TIME eT D = 0.9 EIT TINT<br>D = 0.05<br>Ramm Tat SMe: eat eS eT eee SEREatH eS eeail<br>ER D = 0.02 |<br>0.01 IM TTA AE TTI UEC CIM PT<br>D = 0.01<br>RθJA(t) = r(t) * RθJA<br>rt D = 0.005 ta R θJA  = 193°C/W<br>a ee ee Duty Cycle, D = t1/ t2 an<br>Single Pulse<br>0.001 ciull EET LEAT LEI ELITE J LI<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIMES (sec)<br>Fig. 13 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 

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A3<br>A y SEATING PLANE Po X2-DFN2015-3<br>Vil ol Dim Min  Max  Typ<br>+ A1 7 +} A  − 0.40  −<br>D A1  0 0.05 0.02<br>z<br>A3  −  −  0.13<br>ft —f ++ —<br>L b 0.20 0.30 0.25<br>D  1.45 1.575 1.50<br>e D2  1.00 1.20 1.10<br>| |ee e  | − [| − [| 0.50<br>E - E2 ff E  1.95 2.075 2.00<br>a E2  0.70 ft 0.90 ft 0.80<br>D2 L  0.25 0.35 0.30<br>: ff  fTee ee ee<br>z  − − 0.125<br>|rd All Dimensions in mm<br>| == | | [|ff{|<br>> b<br>out<br>X<br>nae<br>Y2<br>Dimensions Value (in mm)<br>C 1.00<br>G 0.15<br>X1<br>Y1 X  0.31<br>X1  1.30<br>Y  0.50<br>G Fd Y1  1.00<br>X<br>Y Y2  0.65<br>T ey Lat<br>— C —<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

5 of 6 **www.diodes.com** 

DMP1045UFY4 Document number: DS31853  Rev. 7 - 2 

September 2012 © Diodes Incorporated 

**DMP1045UFY4** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

A.   Life support devices or systems are devices or systems which: 

1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2012, Diodes Incorporated 

**www.diodes.com** 

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DMP1045UFY4 Document number: DS31853  Rev. 7 - 2 

September 2012 © Diodes Incorporated 



## Links

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- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmp1045ufy4-7/mosfet-p-ch-12v-5-5a-x2-dfn2015/dp/3943693)
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