# Power MOSFET, Enhancement Mode, P Channel, 12 V, 5.2 A, 0.031 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:2061526/)

**URL**: https://novapart.co/products/DMP1045U/power-mosfet-enhancement-mode-p-channel-12-v-52-a
**SKU**: DMP1045U
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0780
**Stock**: 500+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:5.2A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.026ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-550m

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 800mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 12V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 5.2A |
| Drain Source On State Resistance | 0.031ohm |
| Gate Source Threshold Voltage Max | 550mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2061526/)

**DMP1045U** |__| **P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**V(BR)DSS**|**RDS(on) max**|**ID**<br>**TA = +25°C**|
|-12V|31mΩ@ VGS= -4.5V|5.2A|
||45mΩ@ VGS=-2.5V|4.3A|



## **Features and Benefits** 

- Low On-Resistance 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- **ESD Protected Up To 3kV** 

## **Description** 

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. 

## **Applications** 

- DC-DC Converters 

- Power Management Functions 

- Analog Switch 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Mechanical Data** 

- Case: SOT23 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal Connections: See Diagram 

- Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

- Weight: 0.0072 grams (Approximate) 

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D<br>SOT23<br>D G<br>ESD PROTECTED TO 3kV (2) @ [ G S & Gate Protection Diode S<br>Top View  Pin Configuration  Internal Schematic<br> Information (Note 4)<br>Part Number Case Packaging<br>DMP1045U-7  SOT-23 3,000/Tape & Reel<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

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15P = Marking Code<br>YM = Date Code Marking<br>Y or    = Year (ex: A = 2013) Y<br>15P<br>M = Month (ex: 9 = September)<br>Date Code Key<br>Year 2010 2011 2012 2013 2014 2015<br>Code X  Y  Z  A  B  C<br>a<br>Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>ee Code 1  2  3 4  5 6 7  8 9 O N  D<br>DMP1045U 1 of 6  April 2015<br>www.diodes.com   © Diodes Incorporated<br>YM<br>**----- End of picture text -----**<br>


DMP1045U Document number: DS35051  Rev. 5 - 2 

**DMP1045U** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|||||||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Units**|
|Drain-Source Voltage|||VDSS|-12|V|
|Gate-Source Voltage|||VGSS|±8|V|
|Continuous Drain Current (Note 5) VGS= -4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|4.0<br>3.1|A|
|Continuous Drain Current (Note 5) VGS= -2.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|3.3<br>2.6|A|
|Continuous Drain Current (Note 6) VGS= -4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|5.2<br>4.2|A|
|Continuous Drain Current (Note 6) VGS= -2.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|4.3<br>3.4|A|
|Maximum Continuous  BodyDiode Forward Current(Note 6)|||IS|2|A|
|Pulsed Drain Current(10µspulse,dutycycle=1%) (Note 5)|||IDM|40|A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Units**|
|Total Power Dissipation (Note 5)|PD|0.8|W|
|Thermal Resistance, Junction to Ambient (Note 5)|RJA|168|°C/W|
|Total Power Dissipation (Note 6)|PD|1.3|W|
|Thermal Resistance, Junction to Ambient (Note 6)|RJA|99|°C/W|
|Thermal Resistance, Junction to Case (Note 6)|RJc|14.8|°C/W|
|Operatingand Storage Temperature Range|TJ, TSTG|-55 to +150|°C|



**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~ee~~|**Symbol**<br>~~ee~~|**Min**<br>~~ee~~|**Typ**<br>~~ee~~|**Max**<br>~~ee~~|**Unit**<br>~~ee~~|**Test Condition**<br>~~ee~~|
|**OFF CHARACTERISTICS(Note 7)**<br>~~ee~~|||||||
|Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~<br>~~a a~~|-12<br>~~ee~~<br>~~a~~|—<br>~~ee~~<br>~~a~~|—<br>~~ee~~|V<br>~~ee~~|VGS= 0V, ID= -250µA<br>~~ee~~|
|Zero Gate Voltage Drain Current                TJ= +25°C<br>~~a~~|IDSS<br>~~a~~<br>~~a a~~|—<br>~~a~~<br>~~a~~|—<br>~~a~~<br>~~a~~|-1.0<br>~~a~~|µA<br>~~a~~|VDS= -12V, VGS= 0V<br>~~a~~|
|Gate-Source Leakage<br>~~a~~|IGSS<br>~~a~~<br>~~a a~~|—<br>~~a~~<br>~~a~~|—<br>~~a~~<br>~~a~~|±10<br>~~a~~|µA<br>~~a~~|VGS=8V, VDS= 0V<br>~~a~~|
|**ON CHARACTERISTICS(Note 7)**<br>~~a a~~<br>~~Ps~~<br>~~DO~~<br>~~I((~~|||||||
|Gate Threshold Voltage<br>~~en~~|VGS(th)<br>~~en~~<br>~~Ps~~|-0.3<br>~~en~~<br>~~DO~~|-0.55<br>~~en~~<br>~~DO~~|-1.0<br>~~en~~<br>~~I~~<br>~~—~~|V<br>~~en~~<br>~~(~~<br>~~—~~|VDS= VGS, ID= -250µA<br>~~en~~<br>~~(~~|
|Static Drain-Source On-Resistance<br>~~i~~|RDS(ON)<br>~~Ps~~<br>~~i~~<br>~~a~~|—<br>~~DO~~<br>~~i~~<br>|26<br>~~DO~~<br>~~i~~|31<br>~~I ~~<br>~~i~~<br>~~—~~|mΩ<br> ~~( ~~<br>~~i~~<br>~~—~~|VGS= -4.5V, ID= -4.0A<br> ~~(~~<br>~~i~~|
||||31<br>~~i~~|45<br>~~i~~<br>~~—~~||VGS= -2.5V, ID= -3.5A<br>~~i~~|
||||45<br>~~i~~<br>~~a~~|75<br>~~i~~<br>~~—~~<br>~~a~~||VGS= -1.8V, ID= -2.7A<br>~~i~~|
|Forward Transfer Admittance<br>~~a~~||Yfs|<br>~~a~~<br>~~a~~|—<br>~~a~~<br>|12<br>~~a~~<br>~~a~~|—<br>~~—~~<br>~~a~~<br>~~a~~|S<br>~~—~~<br>~~a~~|VDS= -5V, ID= -4A<br>~~a~~|
|Diode Forward Voltage<br>~~a~~|VSD<br>~~a~~<br>~~a~~|—<br>~~a~~<br>|-0.6<br>~~a~~<br>~~a~~|—<br>~~a~~<br>~~a~~|V<br>~~a~~|VGS= 0V, IS= -1A<br>~~a~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~a a~~<br>~~Co~~|||||||
|Input Capacitance<br>~~Co——~~|Ciss<br>~~——~~|—<br>~~——~~|1,357<br>~~——~~|—<br>~~——~~|pF<br>~~——~~|VDS= -10V, VGS= 0V<br>f = 1.0MHz<br>~~——~~|
|Output Capacitance<br>~~Co——~~|Coss<br>~~——~~|—<br>~~——~~|504<br>~~——~~|—<br>~~——~~|pF<br>~~——~~||
|Reverse Transfer Capacitance<br>~~——~~|Crss<br>~~——~~|—<br>~~——~~|235<br>~~——~~|—<br>~~——~~|pF<br>~~——~~||
|Gate Resistnace<br>~~——~~|Rg<br>~~——~~|—<br>~~——~~|14.1<br>~~——~~|—<br>~~——~~|Ω<br>~~——~~|VDS= 0V, VGS= 0V, f = 1.0MHz<br>~~——~~|
|**SWITCHING CHARACTERISTICS(Note 8)**|||||||
|Total Gate Charge<br>~~ne~~|Qg<br>~~ne~~|—<br>~~ne~~|15.8<br>~~ne~~|—<br>~~ne~~|nC<br>~~ne~~|VGS= -4.5V, VDS= -10V, ID= -4A<br>~~ne~~<br>~~ee~~|
|Gate-Source Charge<br>~~ne~~|Qgs<br>~~ne~~|—<br>~~ne~~|2.0<br>~~ne~~|—<br>~~ne~~|nC<br>~~ne~~||
|Gate-Drain Charge<br>~~ne~~<br>~~Ce——<———~~|Qgd<br>~~ne~~|—<br>~~ne~~|3.9<br>~~ne~~|—<br>~~ne~~<br>~~ee~~|nC<br>~~ne~~<br>~~ee~~||
|Turn-On Delay Time<br>~~Ce——<———~~|tD(on)|—|15.7|—<br>~~ee~~|ns<br>~~ee~~|VDS= -10V, VGS= -4.5V,<br>RL= 2.5Ω, RG= 3.0Ω<br>~~ee~~|
|Turn-On Rise Time<br>~~Ce——<———~~|tr|—|23.3|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off DelayTime<br>~~——<———~~|tD(off)|—|91.2|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~——<———~~|tf|—|106.9|—<br>~~ee~~|ns<br>~~ee~~||



8. Guaranteed by design. Not subject to production testing. 

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**DMP1045U** 

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20.0  20<br>VDS= 5.0V<br>18.0<br>16.0  16<br>14.0  Hea pe<br>12.0  12<br>10.0  Ko| a<br>8.0  8<br>6.0  fee — 7<br>| oe ee a<br>4.0  4<br>| ay<br>2.0<br>fo per<br>0.0  PCOCEer 0 o/s<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 0.5 1 1.5 2 2.5 3<br>VDS, DRAIN -SOURCE VOLTAGE(V) VGS, GATE SOURCE VOLTAGE(V)<br>Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics<br>0.08 0.05<br>VGS= 4.5V<br>TA=125°C TA=150°C<br>0.04<br>0.06<br>0.03 T A =85°C<br>0.04 eee VGS=2.5V TA=25°C<br>VGS=4.5V 0.02<br>TA=-55°C<br>0.02<br>VGS=8.0V 0.01<br>0 TAL 0<br>0 iiaiiittil 4 8 12 16 20 0 saa 4 8 12 16 20<br>ID, DRAIN SOURCE CURRENT ID, DRAIN CURRENT (A)<br>Fig. 3  Typical On-Resistance vs.  Fig. 4  Typical On-Resistance vs.<br>Drain Current and Gate Voltage  Drain Current and Temperature<br>1.6 TT bee 0.05<br>1.4 0.04<br>1.2 titi Vosr2.Zatbe 0.03 Ler Ip22.5A — A<br>7 — S —<br>1 a 0.02 ee aateTN<br>0.8 0.01<br>0.6 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)<br>Fig. 5  On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A)<br>ID<br>)<br>, DRAIN-SOURCE ON-RESISTANCE(<br>R<br>DS(ON)<br>(Normalized)<br>, DRAIN-SOURCE ON-RESISTANCE<br>R<br>DS(ON)<br>, DRAIN CURRENT (A)<br>ID<br>)<br>, DRAIN-SOURCE ON-RESISTANCE(<br>R<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>**----- End of picture text -----**<br>


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**DMP1045U** 

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**----- Start of picture text -----**<br>
1.211 TTT] dT].<br>0.8 yy tt yd]<br>0.6 ———_:_—__<br>ID= 1mAD= 1mA= 1mA<br>0.4 | PRR I D = 250µA<br>ae oSS S<br>0.2<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C)J, JUNCTION TEMPERATURE (C), JUNCTION TEMPERATURE (C)C)C)<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature<br>, GATE THRESHOLD VOLTAGE (V)<br>V<br>GS(th)<br>**----- End of picture text -----**<br>


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1.211 TTT] dT]. 20 PT | Ty Tf<br>16<br>TA= 25C<br>0.8 yy tt yd] iP| | | | ry<br>12<br>0.6 ———_:_—__ ee<br>ID= 1mAD= 1mA= 1mA<br>8<br>0.4 | PRR I D = 250µA | | | eee | Tfee UTee<br>4<br>ae oSS S PTa| Tifa<br>0.2<br>0<br>0 | |TY|<br>-50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1 1.2 1.4<br>TJ, JUNCTION TEMPERATURE (C)J, JUNCTION TEMPERATURE (C), JUNCTION TEMPERATURE (C)C)C) VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current<br>100000 10000<br>TA = 150C<br>10000 === =====—<br>SSS a ee ee eeee<br>1000 C iss<br>100 TA = 85C 1000<br>SSS > = oN<br>10<br>C oss<br>=e<br>1 rr<br>TA = 25C f = 1MHz C rss<br>0.1 a 100 tty]<br>0 4 8 12 16 20 0 2 4 6 8 10 12<br>VDS, DRAIN-SOURCE VOLTAGE (V) VDS , DRAIN-SOURCE VOLTAGE (V)<br>Fig. 9 Typical Drain-Source Leakage Current vs. Voltage Fig 10 Typical Junction Capacitance<br>8<br>VDS=-10V, ID=-4A<br>6<br>4<br>2<br>0<br>0 4 8 12 16 20 24 28<br>QG -(nC)<br>Fig. 11 Gate Charge Characteristics<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, SOURCE CURRENT (A)<br>IS<br>DSS<br>, LEAKAGE CURRENT (nA)<br>I<br>, GATE THRESHOLD VOLTAGE (V)<br>V<br>GS(th)<br>(V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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**DMP1045U** 

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1<br>Cn<br>EEL LeSer<br>—— TTT mmm<br>Feoa a@o-08cen|} NI 1TH tee etaA TITHE HHIIIL<br>y@o-03 |CONTI TEPU N |eeeCAPTFTILIU FUT PTT<br>Nr geTZ ULE<br>0.1 Fe)@=aEtt0-04 SEpf’|| 1ertot gHAyt r(t) @ D=0.9HE: egoA EE0 |<br>yep OH<br>meres TT Cea<br>PUA TE ETI PTT PTET PT<br>rl A<br>0.01 ALL LLL EE ELIE EL<br>) @ 0-001 =A DY1<br>ems A CT TT TT TT TPPT<br>i @ D=0.008 — AH TTI RJA(t)=r(t) * RJA<br>UII wore SI TAITTTT ETITIN TTTTEE TTTPIT TT RJA=164C/W intHIT<br>Duty Cycle, D=t1/ t2<br>0.001<br>0.00001 | maecseverin 0.0001 IM 0.001 HIM 0.01 LIMIT 0.1 FUT 1 TAI 10 1 100 ll 1000<br>t1, PULSE DURATION TIME (sec)<br>Fig. 12 Transient Thermal Resistance<br>ge Outline Dimensions e Outline Dimensions<br>Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.<br>All 7°<br>H SOT23<br>- _ ~ GAUGE PLANE PO Dim  Min  Max  Typ<br>0.25 re A  ee 0.37  0.51  0.40<br>K1 K J ee B  1.20 1.40 1.30<br>C  2.30  2.50  2.40<br>1 | ee D  ee 0.89  1.03  0.915<br>a<br>F  0.45  0.60  0.535<br>A M<br>G  1.78  2.05  1.83<br>oe ' L A L1 ee H  2.80  3.00  2.90<br>o e ee J  ee 0.013  0.10  0.05<br>| ee<br>K  0.890  1.00  0.975<br>SS ee K1  ee 0.903  1.10  1.025<br>C B | | | e L  es 0.45 0.61  0.55<br>L1  0.25 0.55 0.40<br>| | re<br>M  0.085 0.150 0.110<br>aTp). | TD) | era a e ee 8°<br>D All Dimensions in mm<br>F G<br>oa ne<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


## **Package Outline Dimensions e Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 

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**DMP1045U** 

## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

**==> picture [171 x 102] intentionally omitted <==**

**----- Start of picture text -----**<br>
Y<br>Z<br>TOE C<br>X E<br>iacjeKahon<br>**----- End of picture text -----**<br>


|**Dimensions Value**|**Dimensions Value(in mm)**|
|---|---|
|**Z**|2.9|
|**X**|0.8|
|**Y**|0.9|
|**C**|2.0|
|**E**|1.35|



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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

A.   Life support devices or systems are devices or systems which: 

1. are intended to implant into the body, or 

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- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2015, Diodes Incorporated 

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> typically respond to quote requests within one business day.
> [Request a quote](https://novapart.co/quote/) — it's free and there's no
> minimum order.