# Power MOSFET, P Channel, 12 V, 4 A, 0.031 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:3127351/)

**URL**: https://novapart.co/products/DMP1045U-7/power-mosfet-p-channel-12-v-4-a-0031-ohm-sot-23
**SKU**: DMP1045U-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1150
**Stock**: 1000+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-4A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.026ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-550mV;

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 800mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 12V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 4A |
| Drain Source On State Resistance | 0.031ohm |
| Gate Source Threshold Voltage Max | 550mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3127351/)

**DMP1045U** CT 

## **P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
|**BVDSS**<br>**RDS(ON) Max**<br>**ID**<br>**TA = +25°C**<br>-12V<br>31mΩ @ VGS= -4.5V<br>5.2A<br>45mΩ @ VGS=-2.5V<br>4.3A|||
|**BVDSS**|**RDS(ON) Max**|**ID**<br>**TA = +25°C**|
|-12V|31mΩ @ VGS= -4.5V|5.2A|
||45mΩ @ VGS=-2.5V|4.3A|



## **Features and Benefits** 

- Low On-Resistance 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- **ESD Protected** 

## **Description** 

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) while maintaining superior switching performance, which makes the device ideal for high-efficiency powermanagement applications. 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **An Automotive-Compliant Part is Available Under Separate Data Sheet (DMP1045UQ)** 

## **Applications** 

- DC-DC Converters 

- Power Management Functions 

- Analog Switch 

## **Mechanical Data** 

- Case: SOT23 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal Connections: See Diagram 

- Terminals: Finish—Matte Tin Annealed Over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

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 Weight: 0.009 grams (Approximate)<br>D<br>SOT23<br>D<br>G<br>ESD protected Gate<br>G S<br>D e t & Gate Protection Diode S<br>Top View  Pin Configuration  Internal Schematic<br> Information (Note 4)<br>Part Number Case Packaging<br>DMP1045U-7  SOT23 3,000/Tape & Reel<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3).compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, see http://www.diodes.com/products/packages.html. 

## **Marking Information** 

15P = Marking Code YM = Date Code Marking Y or    = Year (ex: E = 2017) Y M = Month (ex: 9 = September) 

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15P<br>M = Month (ex: 9 = September)<br>Date Code Key<br>Year 2010 ~ 2016 2017 2018 2019 2020  2021  2022  2023<br>a Code X  ~  D  E  F  G  H  I  J  K<br>Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>rr Code 1  2  3 4  5 6 7  8 9 O N  D<br>DMP1045U 1 of 7  April 2018<br>Document number: DS35051  Rev. 7 - 2 www.diodes.com   © Diodes Incorporated<br>**----- End of picture text -----**<br>


**DMP1045U** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Units**|
|Drain-Source Voltage|||VDSS|-12|V|
|Gate-Source Voltage|||VGSS|±8|V|
|Continuous Drain Current (Note 5) VGS= -4.5V|Steady State|TA= +25°C<br>TA= +70°C|ID|4.0<br>3.1|A|
|Continuous Drain Current (Note 5) VGS= -2.5V|Steady State|TA= +25°C<br>TA= +70°C|ID|3.3<br>2.6|A|
|Continuous Drain Current (Note 6) VGS= -4.5V|Steady State|TA= +25°C<br>TA= +70°C|ID|5.2<br>4.2|A|
|Continuous Drain Current (Note 6) VGS= -2.5V|Steady State|TA= +25°C<br>TA= +70°C|ID|4.3<br>3.4|A|
|Maximum Continuous BodyDiode Forward Current(Note 6)|||IS|2|A|
|Pulsed Drain Current(10µs Pulse,DutyCycle = 1%) (Note 5)|||IDM|40|A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Units**|
|Total Power Dissipation (Note 5)|PD|0.8|W|
|Thermal Resistance, Junction to Ambient (Note 5)|RθJA|168|°C/W|
|Total Power Dissipation (Note 6)|PD|1.3|W|
|Thermal Resistance, Junction to Ambient (Note 6)|RθJA|99|°C/W|
|Thermal Resistance, Junction to Case (Note 6)|RθJC|14.8|°C/W|
|Operatingand Storage Temperature Range|TJ, TSTG|-55 to +150|°C|



**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~ee~~|**Symbol**<br>~~ee~~|**Min**<br>~~ee~~|**Typ**<br>~~ee~~|**Max**<br>~~ee~~|**Unit**<br>~~ee~~|**Test Condition**<br>~~ee~~|
|**OFF CHARACTERISTICS**(Note 7)<br>~~ee~~|||||||
|Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~<br>~~a~~|-12<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|V<br>~~ee~~|VGS= 0V, ID= -250µA<br>~~ee~~|
|Zero Gate Voltage Drain Current(TJ= +25°C)<br>~~a~~|IDSS<br>~~a~~<br>~~a~~|—<br>~~a~~|—<br>~~a~~|-1.0<br>~~a~~|µA<br>~~a~~|VDS= -12V, VGS= 0V<br>~~a~~|
|Gate-Source Leakage<br>~~a~~|IGSS<br>~~a~~<br>~~a~~|—<br>~~a~~|—<br>~~a~~|±10<br>~~a~~|µA<br>~~a~~|VGS=8V, VDS= 0V<br>~~a~~|
|**ON CHARACTERISTICS**(Note 7)<br>~~a~~|||||||
|Gate Threshold Voltage|VGS(TH)|-0.3|-0.55|-1.0<br>~~—~~|V|VDS= VGS, ID= -250µA|
|Static Drain-Source On-Resistance<br>~~ee~~|RDS(ON)<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|26<br>~~ee~~|31<br>~~ee~~<br>~~—~~|mΩ<br>~~ee~~|VGS= -4.5V, ID= -4.0A<br>~~ee~~|
||||31<br>~~ee~~|45<br>~~ee~~<br>~~—~~||VGS= -2.5V, ID= -3.5A<br>~~ee~~|
||||45<br>~~ee~~|75<br>~~ee~~<br>~~—~~||VGS= -1.8V, ID= -2.7A<br>~~ee~~|
|Forward Transfer Admittance<br>~~as~~||YFS|<br>~~as~~<br>~~ee~~|—<br>~~as~~<br>~~ee~~|12<br>~~as~~|—<br>~~—~~<br>~~as~~|S<br>~~as~~|VDS= -5V, ID= -4A<br>~~as~~|
|Diode Forward Voltage<br>~~as~~|VSD<br>~~as~~<br>~~ee~~|—<br>~~as~~<br>~~ee~~|-0.6<br>~~as~~|—<br>~~as~~|V<br>~~as~~|VGS= 0V, IS= -1A<br>~~as~~|
|**DYNAMIC CHARACTERISTICS**(Note 8)<br>~~ee~~<br>~~RC~~|||||||
|Input Capacitance<br>~~RCee~~|CISS<br>~~ee~~|—<br>~~ee~~|1357<br>~~ee~~|—<br>~~ee~~|pF<br>~~ee~~|VDS= -10V, VGS= 0V<br>f = 1.0MHz<br>~~ee~~|
|Output Capacitance<br>~~RCee~~|COSS<br>~~ee~~|—<br>~~ee~~|504<br>~~ee~~|—<br>~~ee~~|pF<br>~~ee~~||
|Reverse Transfer Capacitance<br>~~ee~~|CRSS<br>~~ee~~|—<br>~~ee~~|235<br>~~ee~~|—<br>~~ee~~|pF<br>~~ee~~||
|Gate Resistnace<br>~~ee~~|RG<br>~~ee~~|—<br>~~ee~~|14.1<br>~~ee~~|—<br>~~ee~~|Ω<br>~~ee~~|VDS= 0V, VGS= 0V, f = 1.0MHz<br>~~ee~~|
|**SWITCHING CHARACTERISTICS**(Note 8)<br>~~Ce~~|||||||
|Total Gate Charge<br>~~Ce~~|QG|—|15.8|—|nC|VGS= -4.5V, VDS= -10V, ID= -4A<br>~~ee~~|
|Gate-Source Charge<br>~~Ce~~|QGS|—|2.0|—|nC||
|Gate-Drain Charge<br>~~—<—~~|QGD|—|3.9|—<br>~~ee~~|nC<br>~~ee~~||
|Turn-On DelayTime<br>~~—<—~~|tD(ON)|—|15.7|—<br>~~ee~~|ns<br>~~ee~~|VDS= -10V, VGS= -4.5V,<br>RL= 2.5Ω, RG= 3.0Ω<br>~~ee~~|
|Turn-On Rise Time<br>~~—<—~~|tR|—|23.3|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Delay Time<br>~~—<—~~|tD(OFF)|—|91.2|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~—<—~~|tF|—|106.9|—<br>~~ee~~|ns<br>~~ee~~||



- Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PCB, 2oz copper, with thermal vias to bottom layer 1-inch square copper plate. 7 .Short duration pulse test used to minimize self-heating effect. 

   8. Guaranteed by design. Not subject to production testing. 

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**DMP1045U** 

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20.0  20<br>VDS= 5.0V<br>18.0<br>16.0  16<br>14.0  Hea pe<br>12.0  12<br>10.0  Ko| a<br>8.0  8<br>6.0  fee — 7<br>| oe ee a<br>4.0  4<br>| ay<br>2.0<br>fo per<br>0.0  PCOCEer 0 o/s<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 0.5 1 1.5 2 2.5 3<br>VDS, DRAIN -SOURCE VOLTAGE(V) VGS, GATE SOURCE VOLTAGE(V)<br>Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics<br>0.08 0.05<br>VGS= 4.5V<br>TA=125°C TA=150°C<br>0.04<br>0.06<br>0.03 T A =85°C<br>0.04 eee VGS=2.5V TA=25°C<br>VGS=4.5V 0.02<br>TA=-55°C<br>0.02<br>VGS=8.0V 0.01<br>0 TAL 0<br>0 iiaiiittil 4 8 12 16 20 0 saa 4 8 12 16 20<br>ID, DRAIN SOURCE CURRENT ID, DRAIN CURRENT (A)<br>Fig. 3  Typical On-Resistance vs.  Fig. 4  Typical On-Resistance vs.<br>Drain Current and Gate Voltage  Drain Current and Temperature<br>1.6 TT bee 0.05<br>1.4 0.04<br>1.2 titi Vosr2.Zatbe 0.03 Ler Ip22.5A — A<br>7 — S —<br>1 a 0.02 ee aateTN<br>0.8 0.01<br>0.6 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)<br>Fig. 5  On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A)<br>ID<br>)<br>, DRAIN-SOURCE ON-RESISTANCE(<br>R<br>DS(ON)<br>(Normalized)<br>, DRAIN-SOURCE ON-RESISTANCE<br>R<br>DS(ON)<br>, DRAIN CURRENT (A)<br>ID<br>)<br>, DRAIN-SOURCE ON-RESISTANCE(<br>R<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>**----- End of picture text -----**<br>


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1.2 20<br>1<br>16<br>TA= 25C<br>0.8<br>12<br>0.6 SS——_—_:__, FPee| | | | fF [<br>ID= 1mA<br>8<br>0.4 I D = 250µA<br>ee Pt | | lft ft<br>yy | oS] “SS 4 aa<br>0.2<br>0<br>0 PTET TELL TET TT<br>-50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1 1.2 1.4<br>TJ, JUNCTION TEMPERATURE (C) VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current<br>100000 ———— el 10000 a<br>TA = 150C<br>reSSS|<br>10000<br>EE ——— ee<br>———————————————— ee ee ee<br>1000 eeee —— es en ee eeeeee C iss | |<br>100 ae TA = 85C 1000 NE ee<br>ee |<br>——— SS ee<br>10<br>ee oo C oss<br>| ——_<br>1<br>TA = 25C f = 1MHz C rss<br>a a Ga |<br>0.1 a 100<br>0 4 8 12 16 20 0 2 4 6 8 10 12<br>VDS, DRAIN-SOURCE VOLTAGE (V) VDS , DRAIN-SOURCE VOLTAGE (V)<br>Fig. 9 Typical Drain-Source Leakage Current vs. Voltage Fig 10 Typical Junction Capacitance<br>8 100<br>R DS(on)<br>VDS=-10V, ID=-4A EH Limited PW = 100µs<br>i SO,<br>6 10 OTR CoS ort<br>Te NETTIEEl<br>DC<br>4<br>1 PW = 10s<br>P W  = 1s<br>oo ARKOEel<br>2 [| T  = 150P °W C = 100ms NBN<br>0.1 J(m ax) PW = 10ms<br>TC = 25°C PW = 1ms<br>VGS = 8V a ee<br>Single Pulse<br>0 0.01 DUT on 1 * MRP Board an eell<br>0 4 8 12 16 20 24 28 0.1 1 10 100<br>QG -(nC) VDS , DRAIN-SOURCE VOLTAGE (V)<br>Fig. 11 Gate Charge Characteristics Figure 12 SOA, Safe Operation Area<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>D<br>, DRAIN CURRENT (A)<br>I<br>, SOURCE CURRENT (A)<br>IS<br>DSS<br>, LEAKAGE CURRENT (nA)<br>I<br>, GATE THRESHOLD VOLTAGE (V)<br>V<br>GS(th)<br>(V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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1 ee<br>tttTE re ttt ttt ttt<br>Nrer<br>r(t) @ D=0.5 oN<br>pa eo<br>r(t) @ D=0.3<br>r(t) @ D=0.7<br>0.1 EE——— Tina Les CLUDEWesNTrm r(t) @ D=0.9  a TI NTN CHTMIEUI N EAEETTIN ATTIT I<br>r(t) @ D=0.1 EH elEEaEEE<br>aTTT eg<br>r(t) @ D=0.05 tt<br>LP age<br>eeTYP<br>I eA I ETTET<br>r(t) @ D=0.02<br>0.01 r(t) @ D a =0.01 BTacteet ZAeeeAme tiseeeeeGEES<br>aAee TTEE<br>r(t) @ D=0.005 | Aee<br>ra R  JA (t)=r(t) * R JA HT<br>R JA=164C/W<br>Duty Cycle, D=t1/ t2<br>r(t) @ D=Single Pulse<br>0.001 cre FPP CC il<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Fig. 13 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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**DMP1045U** [id 

## DIODES. 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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SOT23<br>All 7°<br>H<br>SOT23<br>GAUGE PLANE<br>0.25 Dim  Min  Max  Typ<br>J A  0.37  0.51  0.40<br>K1 K<br>B  1.20  1.40  1.30<br>C  2.30  2.50  2.40<br>a D  0.89  1.03  0.915<br>A M F  0.45  0.60  0.535<br>=Fae a L e L1 == G  1.78  2.05  1.83<br>H  2.80  3.00  2.90<br>J  0.013 0.10 0.05<br>K  0.890 1.00 0.975<br>| a ——<br>C B K1  0.903 1.10 1.025<br>L  0.45 0.61  0.55<br>L1  0.25  0.55  0.40<br>M  0.085 0.150 0.110<br>wkopr ===——<br>D + a  0°  8°  --<br>All Dimensions in mm<br>F G<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT23** 

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Y<br>Y1 Ea C<br>ESreech<br>Pd X LT X1<br>**----- End of picture text -----**<br>


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Value (in<br>Dimensions<br>mm)<br>C  2.0<br>X  0.8<br>X1  1.35<br>Y  0.9<br>Y1  2.9<br>**----- End of picture text -----**<br>


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**DMP1045U** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2018, Diodes Incorporated 

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## Links

- [View this product on Novapart](https://novapart.co/products/DMP1045U-7/power-mosfet-p-channel-12-v-4-a-0031-ohm-sot-23)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmp1045u-7/mosfet-p-ch-12v-4a-sot23/dp/3127351)
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