# Power MOSFET, P Channel, 12 V, 9.1 A, 0.012 ohm, U-DFN2020, Surface Mount

![Product image](https://novapart.co/image/farnell:3943692RL/)

**URL**: https://novapart.co/products/DMP1022UFDEQ-7/power-mosfet-p-channel-12-v-91-a-0012-ohm-u
**SKU**: DMP1022UFDEQ-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2230
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 660mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | U-DFN2020 |
| Drain Source Voltage Vds | 12V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 9.1A |
| Drain Source On State Resistance | 0.012ohm |
| Gate Source Threshold Voltage Max | 800mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943692RL/)

**DMP1022UFDEQ 12V P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**BVDSS**|**RDS(ON) Max**|**ID Max**<br>**TA = +25°C**|
|---|---|---|
|-12V|16mΩ @ VGS= -4.5V|-9.1A|
||21.5mΩ @ VGS= -2.5V|-7.9A|
||26mΩ @ VGS= -1.8V|-7.0A|
||32mΩ @ VGS= -1.5V|-6.3A|



## **Features** 

- 0.6mm Profile – Ideal For Low Profile Applications 

- PCB Footprint of 4mm[2] 

- Low Gate Threshold Voltage 

- Fast Switching Speed 

- ESD Protected to 3kV 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **PPAP Capable (Note 4)** 

## **Description and Applications** 

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: 

- Engine Management Systems 

- DC-DC Converters 

- Body Control Electronics 

## **Mechanical Data** 

- Case: U-DFN2020-6 (Type E) 

- Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 **e4** 

- Weight: 0.0065 grams (Approximate) 

U-DFN2020-6 (Type E) 

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## **Ordering Information** (Note 5) 

|**Ordering Informationg Information Information** (Note 5)|(Note 5)|||
|---|---|---|---|
|**Part Number**|**Marking**|**Reel Size(inches)**|**Quantity Per Reel**|
|DMP1022UFDEQ-7|P4|7|3,000|



Notes: 

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/product-compliance-definitions/. 

5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

P4 = Product Type Marking Code YM = Date Code Marking **P4** Y = Year (ex: E = 2017) M = Month (ex: 9 = September) Date Code Key **Year 2011 ~ 2015 2016 2017 2018 2019 2020 2021 2022 2023 Code** Y ~ C D E F G H I J K ~~a~~ **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec** ~~**e**~~ **Code** ~~e~~ 1 ~~ee~~ 2 3 4 5 ~~e~~ 6 7 8 9 O N D DMP1022UFDEQ 1 of 8 September 2017 **www.diodes.com** © Diodes Incorporated 

DMP1022UFDEQ Datasheet number: DS40125  Rev. 2 - 2 

**DMP1022UFDEQ** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|-12|V|
|Gate-Source Voltage|||VGSS|±8|V|
|Continuous Drain Current (Note 7) VGS= -4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-9.1<br>-7.2|A|
||t<5s|TA= +25°C<br>TA= +70°C|ID|-11.2<br>-9.0|A|
|Pulsed Drain Current(10μs Pulse,DutyCycle = 1%)|||IDM|-90|A|
|Continuous Source-Drain Diode Current||TA= +25°C<br>TC= +25°C|IS|-2.5<br>-7.1|A|
|Pulsed Source-Drain Diode Current(10μs Pulse,DutyCycle = 1%)|||ISM|-50|A|



## **Thermal Characteristics** 

|**Thermal Characteristics **|**Thermal Characteristics **||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation (Note 6)|TA= +25°C|PD|0.66|W|
||TA= +70°C||0.42||
|Thermal Resistance, Junction to Ambient (Note 6)|Steady State|RθJA|189|°C/W|
||t<5s||123||
|Total Power Dissipation (Note 7)|TA= +25°C|PD|2.03|W|
||TA= +70°C||1.3||
|Thermal Resistance, Junction to Ambient (Note 7)|SteadyState|RθJA|61|°C/W|
||t<5s||40||
|Thermal Resistance,Junction to Case(Note 6)|SteadyState|RθJC|9.3||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



- Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 

7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1-inch square copper plate. 

2 of 8 **www.diodes.com** 

DMP1022UFDEQ Datasheet number: DS40125  Rev. 2 - 2 

September 2017 © Diodes Incorporated 

**DMP1022UFDEQ** 

**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

||||||||
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~Pe~~|**Symbol**<br>~~Pe~~|**Min**<br>~~Pe~~|**Typ **<br>~~Pe~~|**Max**<br>~~Pe~~|**Unit**<br>~~Pe~~|**Test Condition**<br>~~Pe~~|
|**OFF CHARACTERISTICS(Note 8) **<br>~~ee~~|||||||
|Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~|-12<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|V<br>~~ee~~|VGS= 0V,ID= -250μA<br>~~ee~~|
|Zero Gate Voltage Drain Current(TJ= +25°C)<br>~~a~~|IDSS<br>~~a~~|—<br>~~a~~|—<br>~~a~~|-3.5<br>~~a~~|µA<br>~~a~~|VDS= -12V,VGS= 0V<br>~~a~~|
|Gate-Source Leakage<br>~~a~~|IGSS<br>~~a~~|—<br>~~a~~|—<br>~~a~~|±10<br>~~a~~|µA<br>~~a~~|VGS= ±5V,VDS= 0V<br>~~a~~|
|**ON CHARACTERISTICS(Note 8) **<br>~~es~~|||||||
|GateThresholdVoltage<br>~~es~~|VGS(TH)<br>~~es~~|-0.35<br>~~es~~|—<br>~~es~~|-0.8<br>~~es~~|V<br>~~es~~|VDS= VGS,ID= -250μA<br>~~es~~|
|VGS(TH)Temperature Coefficient<br>~~ee~~|ΔVGS(TH)/ΔTJ<br>~~ee~~|—<br>~~ee~~|2.5<br>~~ee~~|—<br>~~ee~~|mV/°C I<br>~~ee~~|mV/°C ID= -250μA<br>~~ee~~|
|On-StateDrainCurrent<br>~~ee~~|ID(ON)<br>~~ee~~|-10<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|A<br>~~ee~~|VGS= -4.5V,VDS< -5A<br>~~ee~~|
|Static Drain-Source On-Resistance|RDS(ON)|—|12<br>~~————~~|16<br>~~————~~|mΩ<br>~~ee~~<br>~~PF~~|VGS= -4.5V,ID= -8.2A|
||||15<br>~~————~~|21.5<br>~~————~~||VGS= -2.5V,ID= -7.2A|
||||20<br>~~——~~|26<br>~~——~~||VGS= -1.8V,ID= -6.6A|
||||23<br>~~——~~<br>~~ee~~|32<br>~~——~~<br>~~ee~~||VGS= -1.5V,ID= -1A<br>~~PF~~|
||||80<br>~~ee~~|160<br>~~ee~~||VGS= -1.2V,ID= -1A<br>~~PF~~|
|Forward Transfer Admittance<br>~~a~~||Yfs|<br>~~a~~|—<br>~~a~~|12<br>~~ee~~<br>~~a~~|—<br>~~ee~~<br>~~a~~|S<br>~~ee~~<br>~~PF~~<br>~~a~~|VDS= -4V,ID= -8.2A<br>~~PF~~<br>~~a~~|
|Diode Forward Voltage<br>~~a~~|VSD<br>~~a~~|—<br>~~a~~|-0.8<br>~~a~~|-1.2<br>~~a~~|V<br>~~a~~|VGS= 0V,IS= -8A<br>~~a~~|
|**DYNAMIC CHARACTERISTICS(Note 9)**<br>~~Oe~~|||||||
|Input Capacitance<br>~~Oe~~|Ciss<br>~~Oe~~|—<br>~~Oe~~|2,953<br>~~Oe~~|—<br>~~Oe~~|pF<br>~~Oe~~<br>~~ef~~|VDS= -4V, VGS= 0V,<br>f = 1.0MHz<br>~~Oe~~<br>~~ef~~|
|Output Capacitance<br>~~Oe~~|Coss<br>~~Oe~~|—<br>~~Oe~~|756<br>~~Oe~~|—<br>~~Oe~~|||
|ReverseTransferCapacitance<br>~~Oe~~<br>~~ef~~|Crss<br>~~Oe~~<br>~~ef~~|—<br>~~Oe~~<br>~~ef~~|678<br>~~Oe~~<br>~~ef~~|—<br>~~Oe~~<br>~~ef~~|||
|GateResistance<br>~~ef~~|Rg<br>~~ef~~|—<br>~~ef~~|8.6<br>~~ef~~|18<br>~~ef~~|Ω<br>~~ef~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~ef~~|
|Total Gate Charge<br>~~a~~<br>~~a~~|Qg<br>~~a~~<br>~~ee~~<br>|—<br>~~a~~<br>~~ee~~<br>|28.4<br>~~a~~<br>~~ee~~<br>|42.6<br>~~a~~<br>~~e~~<br>|nC<br>~~ee~~<br>~~ee~~|VGS= -5V, VDS= -4V,<br>ID= -10A<br>~~ee~~|
|Total Gate Charge<br>~~a~~<br>~~es~~<br>~~a~~|Qg<br>~~a~~<br>~~es~~<br>~~ee~~<br>|—<br>~~a~~<br>~~es~~<br>~~ee~~<br>|25.3<br>~~a~~<br>~~es~~<br>~~ee~~<br>|38<br>~~a~~<br>~~es~~<br>~~e~~<br>||VGS= -4.5V, VDS= -4V,<br>ID= -10A<br>~~ee~~<br>~~ee~~|
|Gate-Source Charge<br>~~es~~<br>~~a~~|Qgs<br>~~es~~<br>~~ee~~<br>|—<br>~~es~~<br>~~ee~~<br>|2.3<br>~~es~~<br>~~ee~~<br>|—<br>~~es~~<br>~~e~~<br>|||
|Gate-Drain Charge<br>~~es~~<br>~~a~~<br>~~————~~|Qgd<br>~~es~~<br>~~ee~~<br>|—<br>~~es~~<br>~~ee~~<br>|7.2<br>~~es~~<br>~~ee~~<br>|—<br>~~es~~<br>~~e~~<br><br>~~ee~~|||
|Turn-On DelayTime<br>~~a (~~<br>~~a~~<br>~~————~~|tD(ON)<br>~~ee~~<br>~~(~~<br>|—<br>~~ee~~<br>~~(~~<br>|20<br>~~ee~~<br>~~(~~<br>|30<br>~~e~~<br>~~(~~<br><br>~~ee~~|ns<br>~~ee~~<br>~~ee~~|VDS= -4V, VGS= -4.5V,<br>RG= 1Ω, RL= 0.4Ω, ID= -9.8A<br>~~ee~~<br>~~ee~~|
|Turn-On RiseTime<br>~~a~~<br>~~a (~~<br>~~————~~|tR<br>~~ee~~<br><br>~~(~~|—<br>~~ee ~~<br><br>~~(~~|28<br> ~~ee ~~<br><br>~~(~~|42<br> ~~e~~<br><br>~~(~~<br>~~ee~~|||
|Turn-Off DelayTime<br>~~a~~<br>~~————~~|tD(OFF)<br>|—<br>|117<br>|176<br><br>~~ee~~|||
|Turn-Off Fall Time<br>~~————~~|tF|—|93|139<br>~~ee~~|||
|**BODY DIODE CHARACTERISTICS**<br>~~————~~<br>~~ee~~<br>~~eee~~|||||||
|Diode Forward Voltage<br>~~eee~~|VSD<br>~~eee~~|—<br>~~eee~~|-0.8<br>~~eee~~|-1.2<br>~~eee~~|V<br>~~eee~~|VGS= 0V,IS= -9.8A<br>~~eee~~|
|Continuous Source-Drain Diode Current (Note 6)<br>~~ee~~|IS<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|-2.5<br>~~ee~~|A<br>~~ee~~<br>~~i~~|TA= +25°C<br>~~ee~~|
|||—<br>~~ee~~|—<br>~~ee~~|-7.1<br>~~ee~~||TC= +25°C<br>~~ee~~|
|Pulse Diode Forward Current(Note 8)<br>~~ee~~|ISM<br>~~ee~~|—<br>~~ee~~<br>~~i~~|—<br>~~ee~~<br>~~i~~|-50<br>~~ee~~<br>~~i~~||—<br>~~ee~~<br>~~ee~~|
|BodyDiode Reverse RecoveryTime(Note 8)<br>~~——~~|tRR<br>~~——~~|—<br>~~——~~<br>~~i~~|28<br>~~——~~<br>~~i~~|56<br>~~——~~<br>~~i~~|ns<br>~~——~~<br>~~i~~|IS= -9.8A, dI/dt = 100A/μs<br>~~——~~<br>~~ee~~|
|Reverse RecoveryFall Time<br>~~nn~~<br>~~——~~|ta<br>~~nn~~<br>~~——~~|—<br>~~nn~~<br>~~——~~<br>~~i~~|10<br>~~nn~~<br>~~——~~<br>~~i~~|—<br>~~nn~~<br>~~——~~<br>~~i~~|||
|Reverse RecoveryRise Time<br>~~——~~|tb<br>~~——~~|—<br>~~——~~<br>~~i~~|18<br>~~——~~<br>~~i~~|—<br>~~——~~<br>~~i~~|||
|BodyDiodeReverseRecovery Charge (Note 8)<br>~~——~~|QRR<br>~~——~~|—<br>~~——~~<br>~~i~~|13<br>~~——~~<br>~~i~~|26<br>~~——~~<br>~~i~~|nC<br>~~——~~<br>~~i~~||



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DMP1022UFDEQ Datasheet number: DS40125  Rev. 2 - 2 

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**DMP1022UFDEQ** 

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100 SS eo a rae 100<br>eS Eee eee rg NTS P    = 10µsW man<br>Oe)a OO nn 90 I Single Pulse RJA = 61C/W<br>TT RDS(ON) | 80 R JA(t)  = r (t)  * R JA<br>10 Ett Limited _ LAIN OSTNETMaal TJ - TA = P * RJA(t)<br>70<br>[A)] T [(] ARSa OP DC NWOTSSSEINPoEe |<br>[N] RE P    = 10sW 60<br>R P    = 1sW<br>UC 1 Beliet tt P    = 100msW NONIPNAS |EHH 50<br>[IN] A rr P    = 10msWP    = 1msW TYAN TSEe 40<br>RD es ee ee P   = 100µsW LAWNSER \<br>30<br>, D SP T A<br>- [I] 0.1<br>Tyymax)ee 20 AV<br>Tye 25°C= 150°C eteTe 10 NI \|<br>0.01 sino Puse § || TINT PI PPT 0 a ae<br>0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>-V    , DRAIN-SOURCE VOLTAGE (V)DS t1, PULSE DURATION TIME (sec)<br>Fig. 1 SOA, Safe Operation Area Fig. 2 Single Pulse Maximum Power Dissipation<br>1 —————cee<br>TTT<br>PEE D = 0.7 oNSerr th<br>Pee D = 0.5<br>Lo D = 0.3 TIENTTL ETT ETIgp EE<br>0.1 IBe D = 0.1 ee,ELIMILoI aTIT D = 0.9 A TTIOO GGEINEOO TUTE<br>a A 8 SGO/B 8 a<br>a TT)<br>PA D = 0.05<br>Lt ae y<br>Hf D = 0.02<br>0.01 naamBe D = 0.01 inappamnassmmmacmmcent iCall”, fee ee cee ee tee O e ee ee eee<br>PTT Ty eetAT<br>boeS D = 0.005 tte0es aoeeT2 eee RRR R θJAθJA JAJA(t) = r(t) * R= 61( = t 61 )=r ℃ 癈 (t/W ) * R /W θJAJA LTTLUTLTH<br>DutDuty Cycle, D=t1/ t2y Cycle, D = t1 / t2<br>Single Pulse<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIMES (sec)<br>t1, PULSE DURATION TIME (sec)<br>Fig. 3 Transient Thermal Resistance<br>Fig. 3 Transient Thermal Resistance<br>, PEAK TRANSIENT POIWER (W)<br>P<br>(PK)<br>, DRAIN CURRENT (A)<br>D<br>-I<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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DMP1022UFDEQ Datasheet number: DS40125  Rev. 2 - 2 

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**DMP1022UFDEQ** 

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30 20<br>VGS = -8.0V<br>VDS = -5.0V<br>25 |22 V GS = -4.5V 16<br>VGS = -2.5V<br>20 VGS = -2.0V<br>VGS = -1.8V 12<br>15 | anna ae<br>| (eee en<br>VGS = -1.5V 8<br>10<br>,———_-—— J<br>4 TA = 150C TA = 85C<br>5 TA = 125C TA = 25C<br>‘PERRRREEE VGS = -1.2V ff TA = -55C<br>0 PCCECE LL 0 aa<br>0 1 2 3 4 5 0 0.5 1.0 1.5 2.0 2.5 3.0<br>-VDS, DRAIN -SOURCE VOLTAGE(V) -VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 4 Typical Output Characteristics Fig. 5 Typical Transfer Characteristics<br>0.06 0.030<br>VGS= -4.5V<br>0.050.04 CELTTOC 0.0200.025<br>TA = 150C<br>TA = 125C<br>0.03 0.015 TA = 85C<br>»/aanm TA = 25C<br>0.020.01 A——L- 0.0100.005 TA = -55  C<br>0 PLE 0<br>0 5 10 15 20 25 30 0 4 8 12 16 20<br>-ID, DRAIN SOURCE CURRENT (A)  -ID, DRAIN SOURCE CURRENT (A)<br>Fig. 6 Typical On-Resistance vs.  Fig. 7 Typical On-Resistance vs.<br>Drain Current and Gate Voltage  Drain Current and Temperature<br>1.7 0.04<br>1.5<br>TTT<br>0.03<br>1.3<br>ERD<br>VGS  -2= .5V<br>ID  -5= A<br>1.1 0.02<br>0.9 BEREDZas VGS = -4.5V<br>CET ID  -10= A<br>0.01<br>0.7 ATT LLLT<br>0.5 CCEPCE 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)<br>Fig. 8 On-Resistance Variation with Temperature Fig. 9  On-Resistance Variation with Temperature<br>)<br>,DRAIN-SOURCE ON-RESISTANCE(<br>DS(ON)<br>R<br>, DRAIN CURRENT (A)<br>-I<br>D<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE(<br>DS(ON)<br>R<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (Normalized)<br>, DRAIN CURRENT (A)<br>-I<br>D<br>**----- End of picture text -----**<br>


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DMP1022UFDEQ Datasheet number: DS40125  Rev. 2 - 2 

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**DMP1022UFDEQ** 

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1.4 20<br>1.2<br>Pitt tT 16 i<br>1.0 {EET TT ee<br>0.8 J ft tt} 12 re<br>0.6<br>8<br>Pa SS<br>0.4 |<br>| SE ee ey<br>4<br>0.2<br>ae Ss Of<br>0 0<br>-50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2<br>pT i TTT tt a<br>TA, AMBIENT TEMPERATURE ((°C)  癈 ) -VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 10 Gate Threshold Variation vs. Ambient Temperature Fig. 11 Diode Forward Voltage vs. Current<br>4,000 100,000<br>3,500 f = 1MHz<br>)<br>NEE pase<br>3,000 [nA]<br>T [(]<br>2,500 C iss NER 10,000 T   = 150°CA<br>R<br>U<br>“TPS= C  =Sease<br>2,000 T   = 125°CA<br>G [E]<br>A<br>1,500 KA<br>1,000<br>L [E]<br>1,000 REE Coss ,- [I] = SSD GEESE T   = 85°CA<br>500 en ————<br>Crss T   = 25°CA<br>0 100<br>0 tf 3 | 6 i 9 To 12 15 0 —F 2 [tt] 4 6 8 10 12<br>-VDS, DRAIN-SOURCE VOLTAGE (V) -V    , DRAIN-SOURCE VOLTAGEDS (V)<br>Fig. 12 Typical Junction Capacitance Fig. 13 Typical Drain-Source Leakage Current vs. Voltage<br>8 A<br>64 UAL<br>2 LL<br>0 eCCELEL<br>0 5 10 15 20 25 30 35 40 45 50<br>Qg, TOTAL GATE CHARGE (nC)<br>Fig. 14 Gate-Charge Characteristics<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>V<br>, GATE THRESHOLD VOLTAGE(V)<br>GS(TH)<br>V<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>-V<br>, LEAKAGE CURRENT (nA)<br>DSS<br>-I<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>-V<br>, JUNCTION CAPACITANCE (pF)<br>C<br>T<br>, SOURCE CURRENT (A)<br>-I<br>S<br>**----- End of picture text -----**<br>


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**DMP1022UFDEQ** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**U-DFN2020-6 (Type E)** 

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A3<br>A1<br>A U-DFN2020-6<br>(Type E)<br>Dim  Min  Max  Typ<br>A  0.57  0.63 0.60<br>D A1  0 0.05 0.03<br>l oool |<br>| ae A3    0.15<br>b  0.25 0.35 0.30<br>b1  0.185 0.285 0.235<br>D  1.95 2.05 2.00<br>b1 K1 D2  0.85 1.05 0.95<br>E  1.95 2.05 2.00<br>D2<br>E2  1.40 1.60 1.50<br>E E2 L 1  e    0.65<br>L(2X) L  0.25 0.35 0.30<br>L1  0.82  0.92  0.87<br>K2 K1    0.305<br>K2    0.225<br>Z    0.20<br>All Dimensions in mm<br>Z(4X) ee e b(6X)<br>yout out<br>for the latest version.<br>U-DFN2020-6 (Type E)<br>Value<br>Dimensions<br>(in mm)<br>C  0.650<br>X  0.400<br>X1  0.285<br>X2 X2  1.050<br>Y3 Y2 Y1 Y  0.500<br>Y1  0.920<br>Y2  1.600<br>Y3 2.300<br>X1<br>| (ua<br>X(6x) Seal C ink Y (2x)<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout out** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

7 of 8 **www.diodes.com** 

DMP1022UFDEQ Datasheet number: DS40125  Rev. 2 - 2 

September 2017 © Diodes Incorporated 

**DMP1022UFDEQ** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2017, Diodes Incorporated 

**www.diodes.com** 

8 of 8 **www.diodes.com** 

DMP1022UFDEQ Datasheet number: DS40125  Rev. 2 - 2 

September 2017 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMP1022UFDEQ-7/power-mosfet-p-channel-12-v-91-a-0012-ohm-u)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmp1022ufdeq-7/mosfet-p-ch-12v-9-1a-u-dfn2020/dp/3943692RL)
---

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